KR101517527B1 - 액정 표시장치 - Google Patents

액정 표시장치 Download PDF

Info

Publication number
KR101517527B1
KR101517527B1 KR1020080060339A KR20080060339A KR101517527B1 KR 101517527 B1 KR101517527 B1 KR 101517527B1 KR 1020080060339 A KR1020080060339 A KR 1020080060339A KR 20080060339 A KR20080060339 A KR 20080060339A KR 101517527 B1 KR101517527 B1 KR 101517527B1
Authority
KR
South Korea
Prior art keywords
electrode
buffer layer
semiconductor film
source
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080060339A
Other languages
English (en)
Korean (ko)
Other versions
KR20090004556A (ko
Inventor
순페이 야마자키
유키에 스즈키
히데아키 쿠와바라
하지메 키무라
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20090004556A publication Critical patent/KR20090004556A/ko
Application granted granted Critical
Publication of KR101517527B1 publication Critical patent/KR101517527B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020080060339A 2007-07-06 2008-06-25 액정 표시장치 Expired - Fee Related KR101517527B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00179092 2007-07-06
JP2007179092 2007-07-06

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020100056522A Division KR101152949B1 (ko) 2007-07-06 2010-06-15 액정 표시장치
KR1020130072496A Division KR101537747B1 (ko) 2007-07-06 2013-06-24 액정 표시장치

Publications (2)

Publication Number Publication Date
KR20090004556A KR20090004556A (ko) 2009-01-12
KR101517527B1 true KR101517527B1 (ko) 2015-05-04

Family

ID=40213440

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020080060339A Expired - Fee Related KR101517527B1 (ko) 2007-07-06 2008-06-25 액정 표시장치
KR1020100056522A Active KR101152949B1 (ko) 2007-07-06 2010-06-15 액정 표시장치
KR1020130072496A Active KR101537747B1 (ko) 2007-07-06 2013-06-24 액정 표시장치
KR1020140141151A Active KR101537750B1 (ko) 2007-07-06 2014-10-17 액정 표시장치

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020100056522A Active KR101152949B1 (ko) 2007-07-06 2010-06-15 액정 표시장치
KR1020130072496A Active KR101537747B1 (ko) 2007-07-06 2013-06-24 액정 표시장치
KR1020140141151A Active KR101537750B1 (ko) 2007-07-06 2014-10-17 액정 표시장치

Country Status (5)

Country Link
US (14) US7738050B2 (enExample)
JP (17) JP2009038353A (enExample)
KR (4) KR101517527B1 (enExample)
CN (2) CN101339342B (enExample)
TW (13) TWI793890B (enExample)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1963647A (zh) * 2005-11-10 2007-05-16 群康科技(深圳)有限公司 液晶显示面板
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
JP2009049384A (ja) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
TWI464510B (zh) * 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8101444B2 (en) 2007-08-17 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5395384B2 (ja) * 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5137798B2 (ja) 2007-12-03 2013-02-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5361651B2 (ja) 2008-10-22 2013-12-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
EP2180518B1 (en) * 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5711463B2 (ja) * 2009-01-16 2015-04-30 株式会社半導体エネルギー研究所 薄膜トランジスタ
WO2011010541A1 (en) 2009-07-18 2011-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI634642B (zh) 2009-08-07 2018-09-01 半導體能源研究所股份有限公司 半導體裝置和其製造方法
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
WO2011033911A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102023433B (zh) * 2009-09-18 2012-02-29 北京京东方光电科技有限公司 Tft-lcd阵列基板及其制造方法
KR101933841B1 (ko) * 2009-10-16 2018-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 이를 구비한 전자 장치
WO2011052382A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8830278B2 (en) * 2010-04-09 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
CN102237305B (zh) * 2010-05-06 2013-10-16 北京京东方光电科技有限公司 阵列基板及其制造方法和液晶显示器
US9225975B2 (en) 2010-06-21 2015-12-29 Microsoft Technology Licensing, Llc Optimization of a multi-view display
US10089937B2 (en) * 2010-06-21 2018-10-02 Microsoft Technology Licensing, Llc Spatial and temporal multiplexing display
US9178071B2 (en) 2010-09-13 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101820372B1 (ko) * 2010-11-09 2018-01-22 삼성디스플레이 주식회사 표시 기판, 표시 장치 및 이의 제조 방법
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8536571B2 (en) * 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN102156369B (zh) * 2011-01-18 2013-09-04 京东方科技集团股份有限公司 薄膜晶体管液晶显示阵列基板及其制造方法
US8828859B2 (en) * 2011-02-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming semiconductor film and method for manufacturing semiconductor device
US8629445B2 (en) 2011-02-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic appliance
US8884509B2 (en) 2011-03-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Optical device, display device, and lighting device
US9412623B2 (en) * 2011-06-08 2016-08-09 Cbrite Inc. Metal oxide TFT with improved source/drain contacts and reliability
US8679905B2 (en) * 2011-06-08 2014-03-25 Cbrite Inc. Metal oxide TFT with improved source/drain contacts
KR101929834B1 (ko) * 2011-07-25 2018-12-18 삼성디스플레이 주식회사 박막 트랜지스터 기판, 이를 갖는 액정 표시 장치, 및 박막 트랜지스터 기판의 제조 방법
US20130083080A1 (en) * 2011-09-30 2013-04-04 Apple Inc. Optical system and method to mimic zero-border display
TWI475306B (zh) * 2012-02-29 2015-03-01 Chunghwa Picture Tubes Ltd 畫素結構及其液晶顯示面板
KR20140133288A (ko) * 2013-05-10 2014-11-19 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN104122695B (zh) * 2013-07-19 2017-07-07 深超光电（深圳）有限公司 用于液晶显示面板的阵列基板及阵列基板的制造方法
TWI642170B (zh) 2013-10-18 2018-11-21 半導體能源研究所股份有限公司 顯示裝置及電子裝置
KR102104926B1 (ko) * 2013-10-25 2020-04-28 삼성디스플레이 주식회사 액정 표시 장치
WO2015181679A1 (en) * 2014-05-27 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6392061B2 (ja) * 2014-10-01 2018-09-19 東京エレクトロン株式会社 電子デバイス、その製造方法、及びその製造装置
WO2017037560A1 (en) 2015-08-28 2017-03-09 Semiconductor Energy Laboratory Co., Ltd. Display device
CN105185714B (zh) * 2015-09-22 2018-09-11 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板和显示装置
CN105137688B (zh) * 2015-10-10 2016-12-07 重庆京东方光电科技有限公司 一种阵列基板、显示面板及其驱动方法
JP6607762B2 (ja) * 2015-10-30 2019-11-20 株式会社ジャパンディスプレイ 表示装置
CN108352138B (zh) * 2015-11-06 2020-09-29 夏普株式会社 显示基板以及显示装置
CN106444187A (zh) * 2016-08-22 2017-02-22 京东方科技集团股份有限公司 阵列基板及显示装置
CN206020891U (zh) * 2016-08-31 2017-03-15 京东方科技集团股份有限公司 一种阵列基板及显示面板、显示装置
CN106773205B (zh) * 2016-12-26 2019-09-17 京东方科技集团股份有限公司 显示面板及其制作方法以及显示装置
CN108803120B (zh) * 2017-04-26 2023-12-29 群创光电股份有限公司 液晶显示装置
CN110010695B (zh) 2018-01-05 2021-09-17 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制造方法、显示面板
CN109037037B (zh) * 2018-09-27 2023-09-01 武汉华星光电技术有限公司 低温多晶硅层、薄膜晶体管及其制作方法
KR102596354B1 (ko) * 2018-11-05 2023-10-31 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
DE102019116103B4 (de) * 2019-06-13 2021-04-22 Notion Systems GmbH Verfahren zum Beschriften einer Leiterplatte durch Erzeugen von Schattierungen in einer funktionalen Lackschicht
TWI717983B (zh) * 2020-01-22 2021-02-01 友達光電股份有限公司 適合窄邊框應用的顯示面板與相關的掃描驅動電路
CN111479209B (zh) * 2020-03-16 2021-06-25 东莞市古川胶带有限公司 一种扬声器振膜复合材料
KR102856175B1 (ko) 2020-06-19 2025-09-05 주식회사 원익아이피에스 비정질 실리콘 박막 형성방법, 그를 포함하는 반도체 소자제조방법 및 그에 의하여 제조된 반도체 소자
CN113345916A (zh) * 2021-05-19 2021-09-03 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
TWI862179B (zh) * 2023-09-20 2024-11-11 友達光電股份有限公司 顯示裝置和顯示裝置的製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003043523A (ja) * 2001-08-03 2003-02-13 Casio Comput Co Ltd 薄膜トランジスタパネル
JP2003297850A (ja) * 2002-04-02 2003-10-17 Advanced Display Inc 薄膜トランジスタアレイ及びその製造方法並びにこれを用いた液晶表示装置

Family Cites Families (201)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS5771126A (en) 1980-10-21 1982-05-01 Semiconductor Energy Lab Co Ltd Semiamorhous semiconductor
JPS5972781A (ja) 1982-10-20 1984-04-24 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPS6262073A (ja) 1985-09-11 1987-03-18 Ishikawajima Harima Heavy Ind Co Ltd ポペツト弁の温度制御装置
US4990981A (en) * 1988-01-29 1991-02-05 Hitachi, Ltd. Thin film transistor and a liquid crystal display device using same
JPH0253941A (ja) 1988-08-17 1990-02-22 Tsudakoma Corp 織機の運転装置
JPH02275672A (ja) * 1989-03-30 1990-11-09 Nippon Steel Corp 薄膜トランジスター
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
EP0449539B1 (en) 1990-03-27 1996-07-03 Kabushiki Kaisha Toshiba Ohmic contact for thin film transistor
EP0473988A1 (en) * 1990-08-29 1992-03-11 International Business Machines Corporation Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JPH04253342A (ja) * 1991-01-29 1992-09-09 Oki Electric Ind Co Ltd 薄膜トランジスタアレイ基板
JP2625585B2 (ja) * 1991-03-08 1997-07-02 沖電気工業株式会社 薄膜トランジスタアレイ基板及びその製造方法
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JPH05158067A (ja) 1991-12-03 1993-06-25 Stanley Electric Co Ltd 液晶表示装置とその製造方法
JP2705766B2 (ja) 1992-10-13 1998-01-28 カシオ計算機株式会社 Ｔｆｔパネル
JPH06268222A (ja) 1993-03-16 1994-09-22 Hitachi Ltd 液晶表示装置及びその製造方法
US6835523B1 (en) 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US5932302A (en) 1993-07-20 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating with ultrasonic vibration a carbon coating
JPH07225395A (ja) 1994-02-14 1995-08-22 Hitachi Ltd 液晶表示装置およびその製造方法
JPH07321202A (ja) * 1994-05-25 1995-12-08 Fuji Xerox Co Ltd 多層配線の形成方法
CN1230919C (zh) * 1994-06-02 2005-12-07 株式会社半导体能源研究所 有源矩阵显示器和电光元件
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JPH0888397A (ja) 1994-09-16 1996-04-02 Casio Comput Co Ltd 光電変換素子
TW303526B (enExample) 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
TW345654B (en) * 1995-02-15 1998-11-21 Handotai Energy Kenkyusho Kk Active matrix display device
KR0169386B1 (ko) 1995-05-31 1999-03-20 김광호 액정 표시 장치 및 이에 사용되는 박막 트랜지스터 기판
JP2780681B2 (ja) 1995-08-11 1998-07-30 日本電気株式会社 アクティブマトリクス液晶表示パネル及びその製造方法
JPH09120062A (ja) 1995-08-18 1997-05-06 Toshiba Electron Eng Corp カラーフィルタ基板及びその製造方法、それを用いた液晶表示素子及びその製造方法
JP3999824B2 (ja) * 1995-08-21 2007-10-31 東芝電子エンジニアリング株式会社 液晶表示素子
KR0154817B1 (ko) * 1995-08-25 1998-10-15 김광호 액정 표시 장치용 박막 트랜지스터 및 그 제조 방법
US6888608B2 (en) * 1995-09-06 2005-05-03 Kabushiki Kaisha Toshiba Liquid crystal display device
JP3638346B2 (ja) 1995-09-06 2005-04-13 東芝電子エンジニアリング株式会社 液晶表示素子
TW373098B (en) 1995-09-06 1999-11-01 Toshiba Corp Liquid crystal exposure component and its fabricating method
JPH0980447A (ja) * 1995-09-08 1997-03-28 Toshiba Electron Eng Corp 液晶表示素子
JP2762968B2 (ja) 1995-09-28 1998-06-11 日本電気株式会社 電界効果型薄膜トランジスタの製造方法
US5835177A (en) * 1995-10-05 1998-11-10 Kabushiki Kaisha Toshiba Array substrate with bus lines takeout/terminal sections having multiple conductive layers
JPH09113932A (ja) * 1995-10-19 1997-05-02 Fujitsu Ltd 配線基板とその製造方法
US5831292A (en) * 1996-04-24 1998-11-03 Abb Research Ltd. IGBT having a vertical channel
JPH09325342A (ja) 1996-05-31 1997-12-16 Toshiba Corp 液晶表示素子及びその製造方法
JP3640224B2 (ja) * 1996-06-25 2005-04-20 株式会社半導体エネルギー研究所 液晶表示パネル
JP2907137B2 (ja) * 1996-08-05 1999-06-21 日本電気株式会社 液晶表示装置
JPH1068960A (ja) 1996-08-28 1998-03-10 Sharp Corp 液晶パネルおよびその欠陥修正方法
JPH10153785A (ja) 1996-09-26 1998-06-09 Toshiba Corp 液晶表示装置
JPH10123534A (ja) 1996-10-23 1998-05-15 Toshiba Corp 液晶表示素子
JPH10221696A (ja) 1997-02-06 1998-08-21 Toppan Printing Co Ltd 液晶表示装置用カラーフィルタ及びその製造方法及び液晶表示装置
JP3934731B2 (ja) * 1997-03-24 2007-06-20 株式会社半導体エネルギー研究所 アクティブマトリクス型液晶表示装置の作製方法、アクティブマトリクス型液晶表示装置、電気光学装置
US6163055A (en) 1997-03-24 2000-12-19 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
JPH10270701A (ja) * 1997-03-27 1998-10-09 Advanced Display:Kk 薄膜トランジスタおよびその製法
US6465268B2 (en) 1997-05-22 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
JPH1117188A (ja) * 1997-06-23 1999-01-22 Sharp Corp アクティブマトリクス基板
KR100257158B1 (ko) * 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
JP3636424B2 (ja) * 1997-11-20 2005-04-06 三星電子株式会社 液晶表示装置及びその製造方法
JP3798133B2 (ja) 1997-11-21 2006-07-19 株式会社アドバンスト・ディスプレイ 薄膜トランジスタおよびこれを用いた液晶表示装置並びにｔｆｔアレイ基板の製造方法
JPH11177094A (ja) 1997-12-08 1999-07-02 Advanced Display Inc 半導体薄膜トランジスタおよび該半導体薄膜トランジスタを含む半導体薄膜トランジスタアレイ基板
JP4011725B2 (ja) * 1998-04-24 2007-11-21 東芝松下ディスプレイテクノロジー株式会社 液晶表示装置
JP2000081541A (ja) * 1998-06-29 2000-03-21 Yazaki Corp 光ファイバコネクタ
US7022556B1 (en) * 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
US6506635B1 (en) * 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP4215905B2 (ja) 1999-02-15 2009-01-28 シャープ株式会社 液晶表示装置
EP1031873A3 (en) * 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US7821065B2 (en) * 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
JP2000277439A (ja) 1999-03-25 2000-10-06 Kanegafuchi Chem Ind Co Ltd 結晶質シリコン系薄膜のプラズマｃｖｄ方法およびシリコン系薄膜光電変換装置の製造方法
US6399988B1 (en) * 1999-03-26 2002-06-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having lightly doped regions
US7122835B1 (en) * 1999-04-07 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and a method of manufacturing the same
JP4292350B2 (ja) 1999-04-22 2009-07-08 栄 田中 液晶表示装置とその製造方法
US6514804B1 (en) 1999-05-20 2003-02-04 Nec Corporation Thin-film transistor and fabrication method thereof
JP3356159B2 (ja) * 1999-05-20 2002-12-09 日本電気株式会社 薄膜トランジスタの製造方法
JP2001007024A (ja) 1999-06-18 2001-01-12 Sanyo Electric Co Ltd 多結晶シリコン膜の形成方法
JP2001021916A (ja) * 1999-07-05 2001-01-26 Toshiba Corp マトリクスアレイ基板
US6493050B1 (en) * 1999-10-26 2002-12-10 International Business Machines Corporation Wide viewing angle liquid crystal with ridge/slit pretilt, post spacer and dam structures and method for fabricating same
TW587239B (en) * 1999-11-30 2004-05-11 Semiconductor Energy Lab Electric device
JP2001175198A (ja) * 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4132528B2 (ja) 2000-01-14 2008-08-13 シャープ株式会社 液晶表示装置の製造方法
JP2001201766A (ja) 2000-01-18 2001-07-27 Hitachi Ltd 液晶表示装置の製造方法
US6639265B2 (en) * 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US7023021B2 (en) * 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2001318627A (ja) * 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
TW495854B (en) * 2000-03-06 2002-07-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7098084B2 (en) * 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6838696B2 (en) 2000-03-15 2005-01-04 Advanced Display Inc. Liquid crystal display
JP2001339072A (ja) * 2000-03-15 2001-12-07 Advanced Display Inc 液晶表示装置
US6690437B2 (en) * 2000-04-18 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JP2001354968A (ja) 2000-06-09 2001-12-25 Hitachi Ltd アクティブ・マトリクス型液晶表示装置およびその液晶組成物質
KR100626600B1 (ko) * 2000-08-02 2006-09-22 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판 및 그 제조 방법
JP5148032B2 (ja) 2000-08-09 2013-02-20 株式会社ジャパンディスプレイイースト アクティブマトリクス型表示装置
TWI245957B (en) 2000-08-09 2005-12-21 Hitachi Ltd Active matrix display device
JP4211250B2 (ja) * 2000-10-12 2009-01-21 セイコーエプソン株式会社 トランジスタ及びそれを備える表示装置
JP3992922B2 (ja) * 2000-11-27 2007-10-17 シャープ株式会社 液晶表示装置用基板及びその製造方法及びそれを備えた液晶表示装置
SG116443A1 (en) * 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
JP3831868B2 (ja) 2001-08-13 2006-10-11 大林精工株式会社 アクティブマトリックス表示装置とその製造方法
JP3810725B2 (ja) * 2001-09-21 2006-08-16 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP2003152086A (ja) 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
JP2003173153A (ja) 2001-12-06 2003-06-20 Matsushita Electric Ind Co Ltd 信号線の配線方法および薄膜トランジスタアレイ基板
SG126714A1 (en) 2002-01-24 2006-11-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2003298064A (ja) 2002-04-01 2003-10-17 Sharp Corp 半導体装置およびその製造方法
KR100436181B1 (ko) 2002-04-16 2004-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
JP2004014958A (ja) 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
JP4248306B2 (ja) 2002-06-17 2009-04-02 シャープ株式会社 液晶表示装置
US7205570B2 (en) * 2002-07-19 2007-04-17 Samsung Electronics Co., Ltd. Thin film transistor array panel
KR100852830B1 (ko) 2002-07-29 2008-08-18 비오이 하이디스 테크놀로지 주식회사 프린지 필드 스위칭 모드 액정표시장치의 제조방법
KR100870016B1 (ko) 2002-08-21 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 이를 포함하는 액정 표시장치
JP2004146691A (ja) * 2002-10-25 2004-05-20 Chi Mei Electronics Corp 微結晶薄膜の成膜方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび薄膜トランジスタを用いた画像表示装置
CN100552893C (zh) * 2003-03-26 2009-10-21 株式会社半导体能源研究所 半导体装置及其制造方法
TW577176B (en) * 2003-03-31 2004-02-21 Ind Tech Res Inst Structure of thin-film transistor, and the manufacturing method thereof
TWI395996B (zh) 2003-07-14 2013-05-11 半導體能源研究所股份有限公司 半導體裝置及顯示裝置
CN100474084C (zh) * 2003-07-14 2009-04-01 株式会社半导体能源研究所 液晶显示器件
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
TWI336921B (en) * 2003-07-18 2011-02-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP2005045017A (ja) 2003-07-22 2005-02-17 Sharp Corp アクティブマトリクス基板およびそれを備えた表示装置
JP2005062802A (ja) * 2003-07-28 2005-03-10 Advanced Display Inc 薄膜トランジスタアレイ基板の製法
JP2005050905A (ja) 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
US7206048B2 (en) 2003-08-13 2007-04-17 Samsung Electronics Co., Ltd. Liquid crystal display and panel therefor
US7336336B2 (en) * 2003-10-14 2008-02-26 Lg. Philips Co. Ltd. Thin film transistor array substrate, method of fabricating the same, liquid crystal display panel having the same and fabricating method thereof
US7314785B2 (en) * 2003-10-24 2008-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR100560404B1 (ko) * 2003-11-04 2006-03-14 엘지.필립스 엘시디 주식회사 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법
KR100560402B1 (ko) * 2003-11-04 2006-03-14 엘지.필립스 엘시디 주식회사 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법
KR100682358B1 (ko) * 2003-11-10 2007-02-15 엘지.필립스 엘시디 주식회사 액정 표시 패널 및 제조 방법
KR100585410B1 (ko) * 2003-11-11 2006-06-07 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치의 스위칭 소자 및 구동소자및 그 제조방법
US7439086B2 (en) * 2003-11-14 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing liquid crystal display device
KR101019045B1 (ko) 2003-11-25 2011-03-04 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP2005167051A (ja) 2003-12-04 2005-06-23 Sony Corp 薄膜トランジスタおよび薄膜トランジスタの製造方法
KR20050060963A (ko) 2003-12-17 2005-06-22 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판 및 그 제조방법
TWI366701B (en) * 2004-01-26 2012-06-21 Semiconductor Energy Lab Method of manufacturing display and television
KR101127888B1 (ko) * 2004-02-06 2012-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로의 제조방법 및 소자 기판
US7371625B2 (en) 2004-02-13 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, liquid crystal television system, and EL television system
JP4754841B2 (ja) * 2004-02-13 2011-08-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4238155B2 (ja) 2004-02-23 2009-03-11 シャープ株式会社 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びにその製造方法
SG115733A1 (en) * 2004-03-12 2005-10-28 Semiconductor Energy Lab Thin film transistor, semiconductor device, and method for manufacturing the same
US7476306B2 (en) * 2004-04-01 2009-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for electroplating
KR20050100959A (ko) 2004-04-16 2005-10-20 삼성전자주식회사 어레이 기판 및 이의 제조 방법과, 이를 갖는 액정표시장치
JP2005322845A (ja) 2004-05-11 2005-11-17 Sekisui Chem Co Ltd 半導体デバイスと、その製造装置、および製造方法
US7433004B2 (en) * 2004-06-11 2008-10-07 Sharp Kabushiki Kaisha Color filter substrate, method of making the color filter substrate and display device including the color filter substrate
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
EP1624333B1 (en) * 2004-08-03 2017-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device, manufacturing method thereof, and television set
US7417249B2 (en) * 2004-08-20 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybdenum
KR100850613B1 (ko) * 2004-08-24 2008-08-05 샤프 가부시키가이샤 액티브 매트릭스 기판 및 그것을 구비한 표시 장치
US7247529B2 (en) * 2004-08-30 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP4879530B2 (ja) 2004-09-08 2012-02-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7416928B2 (en) 2004-09-08 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20060065894A1 (en) 2004-09-24 2006-03-30 Jin-Goo Jung Thin film transistor array panel and manufacturing method thereof
US8148895B2 (en) * 2004-10-01 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the same
EP2246836A1 (en) 2004-12-16 2010-11-03 Sharp Kabushiki Kaisha Active Matrix Substrate, Method For Fabricating Active Matrix Substrate, Display Device, Liquid Cyrstal Display Device, And Television Device
US8068200B2 (en) * 2004-12-24 2011-11-29 Casio Computer Co., Ltd. Vertical alignment liquid crystal display device in which a pixel electrode has slits which divide the pixel electrode into electrode portions
KR100793357B1 (ko) * 2005-03-18 2008-01-11 삼성에스디아이 주식회사 박막트랜지스터와 평판표시장치 및 그의 제조 방법
KR101216688B1 (ko) * 2005-05-02 2012-12-31 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 액정 표시 장치
KR20060117671A (ko) 2005-05-13 2006-11-17 삼성전자주식회사 표시 장치
US7579220B2 (en) * 2005-05-20 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method
KR101146524B1 (ko) 2005-05-23 2012-05-25 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
CN100463018C (zh) 2005-05-23 2009-02-18 夏普株式会社 有源矩阵衬底、显示装置以及像素缺陷修正方法
KR101152528B1 (ko) * 2005-06-27 2012-06-01 엘지디스플레이 주식회사 누설전류를 줄일 수 있는 액정표시소자 및 그 제조방법
US7576359B2 (en) * 2005-08-12 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
TWI424408B (zh) * 2005-08-12 2014-01-21 半導體能源研究所股份有限公司 半導體裝置，和安裝有該半導體裝置的顯示裝置和電子裝置
KR101298940B1 (ko) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터기판의 제조방법
JP4753373B2 (ja) * 2005-09-16 2011-08-24 株式会社半導体エネルギー研究所 表示装置及び表示装置の駆動方法
KR101177720B1 (ko) * 2005-09-20 2012-08-28 엘지디스플레이 주식회사 액정표시장치와 그 제조방법
JP2007093686A (ja) * 2005-09-27 2007-04-12 Mitsubishi Electric Corp 液晶表示装置及びその製造方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP2007102225A (ja) 2005-10-05 2007-04-19 Samsung Electronics Co Ltd 薄膜トランジスタ表示板及びその製造方法
JP5427340B2 (ja) 2005-10-14 2014-02-26 株式会社半導体エネルギー研究所 半導体装置
EP1935027B1 (en) * 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20070045491A (ko) 2005-10-27 2007-05-02 삼성전자주식회사 박막 트랜지스터 표시판
KR101151799B1 (ko) * 2005-11-09 2012-06-01 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
KR100792300B1 (ko) * 2005-11-11 2008-01-07 비오이 하이디스 테크놀로지 주식회사 반투과형 액정표시장치의 어레이기판 제조방법
JP2007142059A (ja) 2005-11-17 2007-06-07 Hitachi Displays Ltd 表示装置の製造方法
EP1793367A3 (en) * 2005-12-02 2009-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2007063814A1 (en) * 2005-12-02 2007-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
KR101383714B1 (ko) 2005-12-02 2014-04-09 삼성디스플레이 주식회사 액정 표시 장치
US8004481B2 (en) * 2005-12-02 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN102360142B (zh) * 2005-12-05 2016-03-30 株式会社半导体能源研究所 液晶显示器
KR101232139B1 (ko) * 2005-12-13 2013-02-12 엘지디스플레이 주식회사 액정 표시 장치
KR101212146B1 (ko) 2005-12-14 2012-12-14 엘지디스플레이 주식회사 액정표시소자
KR101277606B1 (ko) * 2006-03-22 2013-06-21 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN101943834B (zh) * 2006-04-04 2013-04-10 夏普株式会社 液晶显示装置
JP4820866B2 (ja) 2006-04-24 2011-11-24 シャープ株式会社 液晶表示装置
JP5329053B2 (ja) * 2006-05-24 2013-10-30 三星ディスプレイ株式會社 表示基板
US8106865B2 (en) * 2006-06-02 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US8330492B2 (en) * 2006-06-02 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8048473B2 (en) * 2006-07-04 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI427682B (zh) * 2006-07-04 2014-02-21 半導體能源研究所股份有限公司 顯示裝置的製造方法
US7863612B2 (en) * 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
KR100867866B1 (ko) 2006-09-11 2008-11-07 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 Ｔｆｔ-ｌｃｄ 어레이 기판 및 그 제조 방법
KR20080058762A (ko) * 2006-12-22 2008-06-26 엘지디스플레이 주식회사 박막트랜지스터 액정표시장치용 어레이 기판 및 그제조방법
JP4386084B2 (ja) * 2007-03-06 2009-12-16 エプソンイメージングデバイス株式会社 液晶装置及び電子機器
KR200437941Y1 (ko) * 2007-03-26 2008-01-08 삼성물산 주식회사 위치파악이 용이한 텐던 스페이서
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI464510B (zh) * 2007-07-20 2014-12-11 Semiconductor Energy Lab 液晶顯示裝置
US7968885B2 (en) * 2007-08-07 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP5553531B2 (ja) * 2009-06-03 2014-07-16 株式会社ジャパンディスプレイ 液晶表示装置
KR100993880B1 (ko) * 2010-07-30 2010-11-11 동아에스텍 주식회사 단차보강재가 구비된 데크플레이트

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003043523A (ja) * 2001-08-03 2003-02-13 Casio Comput Co Ltd 薄膜トランジスタパネル
JP2003297850A (ja) * 2002-04-02 2003-10-17 Advanced Display Inc 薄膜トランジスタアレイ及びその製造方法並びにこれを用いた液晶表示装置

Also Published As

Publication number Publication date
JP2022167959A (ja) 2022-11-04
JP6648186B2 (ja) 2020-02-14
JP6622941B1 (ja) 2019-12-18
US20220091453A1 (en) 2022-03-24
JP7432052B2 (ja) 2024-02-15
US10338447B2 (en) 2019-07-02
TW201812420A (zh) 2018-04-01
JP2009038353A (ja) 2009-02-19
KR20130085398A (ko) 2013-07-29
JP7603765B2 (ja) 2024-12-20
TW201835664A (zh) 2018-10-01
US10712625B2 (en) 2020-07-14
US20200133041A1 (en) 2020-04-30
TW201106076A (en) 2011-02-16
US9766526B2 (en) 2017-09-19
US20200326572A1 (en) 2020-10-15
US20130265518A1 (en) 2013-10-10
JP6622942B1 (ja) 2019-12-18
TWI663458B (zh) 2019-06-21
JP6208279B2 (ja) 2017-10-04
US20240027863A1 (en) 2024-01-25
JP2018141995A (ja) 2018-09-13
KR20100080580A (ko) 2010-07-09
US20090009677A1 (en) 2009-01-08
TW200916930A (en) 2009-04-16
TWI432864B (zh) 2014-04-01
JP2016167077A (ja) 2016-09-15
TWI666500B (zh) 2019-07-21
JP7130805B2 (ja) 2022-09-05
TWI694295B (zh) 2020-05-21
TW202041946A (zh) 2020-11-16
US20240402555A1 (en) 2024-12-05
KR101152949B1 (ko) 2012-06-08
US11194207B2 (en) 2021-12-07
US8325285B2 (en) 2012-12-04
JP2023138517A (ja) 2023-10-02
JP2015028663A (ja) 2015-02-12
TW202020537A (zh) 2020-06-01
US20100238391A1 (en) 2010-09-23
US8842230B2 (en) 2014-09-23
JP2020034918A (ja) 2020-03-05
TWI531849B (zh) 2016-05-01
US20190265528A1 (en) 2019-08-29
US8462286B2 (en) 2013-06-11
JP2017215616A (ja) 2017-12-07
TW201418856A (zh) 2014-05-16
US20150001546A1 (en) 2015-01-01
TW202338467A (zh) 2023-10-01
JP2021009407A (ja) 2021-01-28
JP2023182678A (ja) 2023-12-26
US10678107B2 (en) 2020-06-09
TWI696027B (zh) 2020-06-11
JP5731621B2 (ja) 2015-06-10
US12066730B2 (en) 2024-08-20
CN101872097B (zh) 2013-11-13
JP7314376B2 (ja) 2023-07-25
TWI749565B (zh) 2021-12-11
TWI531848B (zh) 2016-05-01
US11726378B2 (en) 2023-08-15
TWI793890B (zh) 2023-02-21
US20180011358A1 (en) 2018-01-11
US8111362B2 (en) 2012-02-07
KR20140131494A (ko) 2014-11-13
JP6339751B1 (ja) 2018-06-06
US7738050B2 (en) 2010-06-15
TW201418857A (zh) 2014-05-16
JP2014067049A (ja) 2014-04-17
US9188825B2 (en) 2015-11-17
KR20090004556A (ko) 2009-01-12
JP2021107933A (ja) 2021-07-29
JP6860738B2 (ja) 2021-04-21
JP2018151638A (ja) 2018-09-27
TWI617871B (zh) 2018-03-11
TWI531847B (zh) 2016-05-01
JP2014075590A (ja) 2014-04-24
JP2020034917A (ja) 2020-03-05
TW201932953A (zh) 2019-08-16
CN101339342B (zh) 2012-07-04
JP2019194700A (ja) 2019-11-07
TW201418858A (zh) 2014-05-16
CN101339342A (zh) 2009-01-07
JP2025028119A (ja) 2025-02-28
US20120086012A1 (en) 2012-04-12
CN101872097A (zh) 2010-10-27
KR101537750B1 (ko) 2015-07-20
US20160011446A1 (en) 2016-01-14
TWI432863B (zh) 2014-04-01
TW202230002A (zh) 2022-08-01
TW201619682A (zh) 2016-06-01
KR101537747B1 (ko) 2015-07-20
US20130077011A1 (en) 2013-03-28

Similar Documents

Publication Publication Date Title
JP7432052B2 (ja) 表示装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A107 Divisional application of patent
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

A107 Divisional application of patent
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180328

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190328

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200429

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200429

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000