KR101258802B1 - 산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 - Google Patents
산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 Download PDFInfo
- Publication number
- KR101258802B1 KR101258802B1 KR1020127028849A KR20127028849A KR101258802B1 KR 101258802 B1 KR101258802 B1 KR 101258802B1 KR 1020127028849 A KR1020127028849 A KR 1020127028849A KR 20127028849 A KR20127028849 A KR 20127028849A KR 101258802 B1 KR101258802 B1 KR 101258802B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- oxide
- film
- indium oxide
- layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 250
- 239000004065 semiconductor Substances 0.000 title description 59
- 239000013078 crystal Substances 0.000 claims abstract description 111
- 239000010408 film Substances 0.000 claims description 157
- 239000000758 substrate Substances 0.000 claims description 96
- 229910003437 indium oxide Inorganic materials 0.000 claims description 70
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 70
- 239000007789 gas Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 48
- 238000004519 manufacturing process Methods 0.000 claims description 43
- 229910052760 oxygen Inorganic materials 0.000 claims description 43
- 238000004544 sputter deposition Methods 0.000 claims description 38
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 37
- 239000001301 oxygen Substances 0.000 claims description 37
- 230000036961 partial effect Effects 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 229910001868 water Inorganic materials 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 17
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 14
- 229910004205 SiNX Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 239000001272 nitrous oxide Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 125
- 238000005259 measurement Methods 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 37
- 238000011156 evaluation Methods 0.000 description 37
- 235000013339 cereals Nutrition 0.000 description 34
- 238000002425 crystallisation Methods 0.000 description 33
- 230000008025 crystallization Effects 0.000 description 33
- 239000011521 glass Substances 0.000 description 33
- 238000010438 heat treatment Methods 0.000 description 33
- 239000000523 sample Substances 0.000 description 31
- 238000000137 annealing Methods 0.000 description 28
- 238000000427 thin-film deposition Methods 0.000 description 25
- 238000002441 X-ray diffraction Methods 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000011701 zinc Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 238000013507 mapping Methods 0.000 description 19
- 238000009832 plasma treatment Methods 0.000 description 17
- 229910052738 indium Inorganic materials 0.000 description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 15
- 239000013081 microcrystal Substances 0.000 description 15
- 230000005355 Hall effect Effects 0.000 description 14
- 230000005669 field effect Effects 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000005477 sputtering target Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 238000004654 kelvin probe force microscopy Methods 0.000 description 8
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- -1 Ta 2 O 5 Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 206010047571 Visual impairment Diseases 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 238000004445 quantitative analysis Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001028 reflection method Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000000027 scanning ion microscopy Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 241001175904 Labeo bata Species 0.000 description 2
- 229910018068 Li 2 O Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001887 electron backscatter diffraction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004451 qualitative analysis Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006199 nebulizer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 235000020985 whole grains Nutrition 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010293799 | 2010-12-28 | ||
JPJP-P-2010-293799 | 2010-12-28 | ||
JPJP-P-2011-083768 | 2011-04-05 | ||
JP2011083768 | 2011-04-05 | ||
JPJP-P-2011-105718 | 2011-05-10 | ||
JP2011105718 | 2011-05-10 | ||
JP2011251792A JP5189674B2 (ja) | 2010-12-28 | 2011-11-17 | 酸化物半導体薄膜層を有する積層構造、積層構造の製造方法、薄膜トランジスタ及び表示装置 |
JPJP-P-2011-251792 | 2011-11-17 | ||
PCT/JP2011/007307 WO2012090490A1 (ja) | 2010-12-28 | 2011-12-27 | 酸化物半導体薄膜層を有する積層構造及び薄膜トランジスタ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020137003134A Division KR101436766B1 (ko) | 2010-12-28 | 2011-12-27 | 산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120124504A KR20120124504A (ko) | 2012-11-13 |
KR101258802B1 true KR101258802B1 (ko) | 2013-04-26 |
Family
ID=46382623
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020127028849A KR101258802B1 (ko) | 2010-12-28 | 2011-12-27 | 산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 |
KR1020137003134A KR101436766B1 (ko) | 2010-12-28 | 2011-12-27 | 산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020137003134A KR101436766B1 (ko) | 2010-12-28 | 2011-12-27 | 산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8785927B2 (ja) |
EP (1) | EP2660868A4 (ja) |
JP (1) | JP5189674B2 (ja) |
KR (2) | KR101258802B1 (ja) |
CN (4) | CN103400751B (ja) |
TW (4) | TW201351662A (ja) |
WO (1) | WO2012090490A1 (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012169344A (ja) * | 2011-02-10 | 2012-09-06 | Sony Corp | 薄膜トランジスタならびに表示装置および電子機器 |
JP6134230B2 (ja) | 2012-08-31 | 2017-05-24 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
JP6470352B2 (ja) * | 2012-10-18 | 2019-02-13 | 出光興産株式会社 | 酸化物半導体薄膜 |
JP6036984B2 (ja) | 2013-03-08 | 2016-11-30 | 住友金属鉱山株式会社 | 酸窒化物半導体薄膜 |
US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
JP2014192264A (ja) * | 2013-03-26 | 2014-10-06 | Nippon Hoso Kyokai <Nhk> | 薄膜トランジスタの製造方法 |
JP6139973B2 (ja) * | 2013-05-14 | 2017-05-31 | 出光興産株式会社 | 酸化物半導体薄膜及びその製造方法、並びに当該酸化物半導体薄膜を備えてなる薄膜トランジスタ |
TWI652822B (zh) * | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
JP2015018959A (ja) * | 2013-07-11 | 2015-01-29 | 出光興産株式会社 | 酸化物半導体及び酸化物半導体膜の製造方法 |
WO2015008805A1 (ja) * | 2013-07-16 | 2015-01-22 | 住友金属鉱山株式会社 | 酸化物半導体薄膜および薄膜トランジスタ |
TWI608523B (zh) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
KR101498635B1 (ko) * | 2013-08-08 | 2015-03-04 | 주식회사 레이언스 | 이미지센서 및 이의 제조방법 |
JP6142200B2 (ja) | 2013-09-30 | 2017-06-07 | 株式会社Joled | 薄膜半導体装置及びその製造方法 |
KR102317297B1 (ko) | 2014-02-19 | 2021-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물, 반도체 장치, 모듈, 및 전자 장치 |
US20150329371A1 (en) * | 2014-05-13 | 2015-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
JP6416899B2 (ja) | 2014-06-03 | 2018-10-31 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP6037239B2 (ja) * | 2014-09-12 | 2016-12-07 | 長州産業株式会社 | 透明導電膜、これを用いた装置または太陽電池、及び透明導電膜の製造方法 |
CN105425430B (zh) * | 2014-09-19 | 2018-11-16 | 群创光电股份有限公司 | 液晶显示面板及侦测其中液晶层与配向膜间离子所产生的电位的方法 |
JP2016201458A (ja) * | 2015-04-09 | 2016-12-01 | 出光興産株式会社 | 微結晶質酸化物半導体薄膜及びそれを用いた薄膜トランジスタ |
JP6097458B1 (ja) * | 2015-07-30 | 2017-03-15 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、結晶質酸化物半導体薄膜の製造方法及び薄膜トランジスタ |
JP7187322B2 (ja) | 2017-02-01 | 2022-12-12 | 出光興産株式会社 | 結晶質酸化物半導体薄膜、積層体の製造方法、薄膜トランジスタ、薄膜トランジスタの製造方法、電子機器、車載用表示装置 |
WO2019152585A2 (en) * | 2018-01-31 | 2019-08-08 | Northwestern University | Orientation determination and mapping by stage rocking electron channeling and imaging reconstruction |
JP7166866B2 (ja) * | 2018-10-03 | 2022-11-08 | キヤノン株式会社 | 配向性圧電体膜およびその製造方法、圧電体素子、並びに、液体吐出ヘッド |
KR102428977B1 (ko) * | 2019-03-28 | 2022-08-03 | 이데미쓰 고산 가부시키가이샤 | 결정 산화물 박막, 적층체 및 박막 트랜지스터 |
CN112760603A (zh) * | 2019-11-01 | 2021-05-07 | 有研工程技术研究院有限公司 | 一种多孔柱状氧化铟气敏薄膜的制备方法 |
JP2024532172A (ja) * | 2021-08-30 | 2024-09-05 | ケンナメタル インコ-ポレイテツド | 表面被覆された切削ツール |
CN114300554B (zh) * | 2021-11-17 | 2023-11-17 | 香港理工大学深圳研究院 | 一种仿生自适应视觉传感器及其制备方法 |
WO2023189002A1 (ja) * | 2022-03-30 | 2023-10-05 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及び電子機器 |
WO2023189004A1 (ja) * | 2022-03-30 | 2023-10-05 | 株式会社ジャパンディスプレイ | 酸化物半導体膜、薄膜トランジスタ、及び電子機器 |
WO2023189003A1 (ja) * | 2022-03-30 | 2023-10-05 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及び電子機器 |
WO2024029438A1 (ja) * | 2022-08-01 | 2024-02-08 | 株式会社ジャパンディスプレイ | 酸化物半導体膜、薄膜トランジスタ、および電子機器 |
WO2024029437A1 (ja) * | 2022-08-01 | 2024-02-08 | 株式会社ジャパンディスプレイ | 薄膜トランジスタおよび電子機器 |
WO2024154544A1 (ja) * | 2023-01-19 | 2024-07-25 | 株式会社ジャパンディスプレイ | 酸化物半導体膜、薄膜トランジスタ、および電子機器 |
WO2024154543A1 (ja) * | 2023-01-19 | 2024-07-25 | 株式会社ジャパンディスプレイ | 積層構造体、薄膜トランジスタ、および電子機器 |
WO2024195630A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社ジャパンディスプレイ | 薄膜トランジスタおよび電子機器 |
WO2024195631A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社ジャパンディスプレイ | 酸化物半導体膜、積層構造体、薄膜トランジスタ、および電子機器 |
WO2024195629A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社ジャパンディスプレイ | 薄膜トランジスタおよび電子機器 |
CN117712261B (zh) * | 2024-02-02 | 2024-05-14 | 江西兆驰半导体有限公司 | Led及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080069607A (ko) * | 2005-11-18 | 2008-07-28 | 이데미쓰 고산 가부시키가이샤 | 반도체 박막, 그의 제조 방법, 박막 트랜지스터 및 액티브매트릭스 구동 표시 패널 |
KR20100094509A (ko) * | 2007-12-13 | 2010-08-26 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체를 이용한 전계 효과형 트랜지스터 및 그 제조방법 |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6238808B1 (en) | 1998-01-23 | 2001-05-29 | Canon Kabushiki Kaisha | Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device |
JP2000022189A (ja) * | 1998-01-23 | 2000-01-21 | Canon Inc | 酸化亜鉛層付基板、酸化亜鉛層の形成方法、光起電力素子及びその製造方法 |
US6649824B1 (en) * | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004137547A (ja) * | 2002-10-17 | 2004-05-13 | Tohoku Ricoh Co Ltd | 被膜部材および成膜方法 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP4780972B2 (ja) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
US7211825B2 (en) * | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP4880597B2 (ja) * | 2005-05-31 | 2012-02-22 | 京セラ株式会社 | 針状結晶の配列体を含む複合体およびその製造方法、ならびに光電変換素子、発光素子およびキャパシタ |
KR20070048017A (ko) * | 2005-11-03 | 2007-05-08 | 엘지전자 주식회사 | 플라즈마 디스플레이 패널의 보호막 |
JP4285524B2 (ja) | 2006-10-13 | 2009-06-24 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP5116290B2 (ja) * | 2006-11-21 | 2013-01-09 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
TWI478347B (zh) * | 2007-02-09 | 2015-03-21 | Idemitsu Kosan Co | A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device |
JP5466939B2 (ja) * | 2007-03-23 | 2014-04-09 | 出光興産株式会社 | 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法 |
JP5466940B2 (ja) * | 2007-04-05 | 2014-04-09 | 出光興産株式会社 | 電界効果型トランジスタ及び電界効果型トランジスタの製造方法 |
JP4759598B2 (ja) | 2007-09-28 | 2011-08-31 | キヤノン株式会社 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
WO2009075161A1 (ja) * | 2007-12-12 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | パターン化結晶質半導体薄膜、薄膜トランジスタの製造方法、及び電界効果型トランジスタ |
JP2009170494A (ja) * | 2008-01-11 | 2009-07-30 | Renesas Technology Corp | 半導体装置 |
JP2009206508A (ja) | 2008-01-31 | 2009-09-10 | Canon Inc | 薄膜トランジスタ及び表示装置 |
WO2009122571A1 (ja) | 2008-04-01 | 2009-10-08 | 株式会社 東芝 | 情報記録再生装置 |
JP5135073B2 (ja) | 2008-06-18 | 2013-01-30 | 出光興産株式会社 | 有機薄膜トランジスタ |
US8129718B2 (en) | 2008-08-28 | 2012-03-06 | Canon Kabushiki Kaisha | Amorphous oxide semiconductor and thin film transistor using the same |
US9269573B2 (en) | 2008-09-17 | 2016-02-23 | Idemitsu Kosan Co., Ltd. | Thin film transistor having crystalline indium oxide semiconductor film |
EP2253988A1 (en) | 2008-09-19 | 2010-11-24 | Christie Digital Systems USA, Inc. | A light integrator for more than one lamp |
JP2010093051A (ja) * | 2008-10-08 | 2010-04-22 | Fujitsu Microelectronics Ltd | 電界効果型半導体装置 |
JP5357515B2 (ja) | 2008-11-05 | 2013-12-04 | 株式会社神戸製鋼所 | 表示装置用Al合金膜、表示装置およびスパッタリングターゲット |
TW201033378A (en) | 2008-11-05 | 2010-09-16 | Kobe Steel Ltd | Al alloy film for display device, display device, and sputtering target |
TWI502739B (zh) * | 2008-11-13 | 2015-10-01 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP5123141B2 (ja) | 2008-11-19 | 2013-01-16 | 株式会社東芝 | 表示装置 |
TWI508304B (zh) * | 2008-11-28 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
CN104926289A (zh) | 2008-12-12 | 2015-09-23 | 出光兴产株式会社 | 复合氧化物烧结体及由其构成的溅射靶 |
US8330156B2 (en) * | 2008-12-26 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with a plurality of oxide clusters over the gate insulating layer |
JP5644143B2 (ja) | 2009-03-25 | 2014-12-24 | 住友化学株式会社 | 塗布方法および有機エレクトロルミネッセンス素子の製造方法 |
US8654292B2 (en) * | 2009-05-29 | 2014-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
JP5564331B2 (ja) * | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101457837B1 (ko) * | 2009-06-30 | 2014-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작 방법 |
KR20200031709A (ko) * | 2009-06-30 | 2020-03-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제조 방법 |
KR101460868B1 (ko) * | 2009-07-10 | 2014-11-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011058913A1 (en) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101895561B1 (ko) | 2009-11-13 | 2018-09-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
-
2011
- 2011-11-17 JP JP2011251792A patent/JP5189674B2/ja active Active
- 2011-12-27 CN CN201310258151.2A patent/CN103400751B/zh not_active Expired - Fee Related
- 2011-12-27 CN CN201180037647.6A patent/CN103038889B/zh active Active
- 2011-12-27 CN CN201310336580.7A patent/CN103474469B/zh active Active
- 2011-12-27 CN CN201310258582.9A patent/CN103354241B/zh active Active
- 2011-12-27 WO PCT/JP2011/007307 patent/WO2012090490A1/ja active Application Filing
- 2011-12-27 KR KR1020127028849A patent/KR101258802B1/ko active IP Right Grant
- 2011-12-27 EP EP11853221.7A patent/EP2660868A4/en not_active Withdrawn
- 2011-12-27 US US13/881,032 patent/US8785927B2/en active Active
- 2011-12-27 KR KR1020137003134A patent/KR101436766B1/ko active IP Right Grant
- 2011-12-28 TW TW102129388A patent/TW201351662A/zh unknown
- 2011-12-28 TW TW102129389A patent/TWI430451B/zh active
- 2011-12-28 TW TW102129390A patent/TWI440188B/zh not_active IP Right Cessation
- 2011-12-28 TW TW100149319A patent/TWI429089B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20080069607A (ko) * | 2005-11-18 | 2008-07-28 | 이데미쓰 고산 가부시키가이샤 | 반도체 박막, 그의 제조 방법, 박막 트랜지스터 및 액티브매트릭스 구동 표시 패널 |
KR20100094509A (ko) * | 2007-12-13 | 2010-08-26 | 이데미쓰 고산 가부시키가이샤 | 산화물 반도체를 이용한 전계 효과형 트랜지스터 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
EP2660868A4 (en) | 2014-02-19 |
TWI440188B (zh) | 2014-06-01 |
US8785927B2 (en) | 2014-07-22 |
CN103038889B (zh) | 2014-12-24 |
JP5189674B2 (ja) | 2013-04-24 |
EP2660868A1 (en) | 2013-11-06 |
US20130221351A1 (en) | 2013-08-29 |
CN103354241A (zh) | 2013-10-16 |
TW201351664A (zh) | 2013-12-16 |
CN103474469B (zh) | 2016-03-23 |
CN103400751B (zh) | 2015-04-08 |
KR20120124504A (ko) | 2012-11-13 |
CN103354241B (zh) | 2015-07-22 |
CN103400751A (zh) | 2013-11-20 |
KR101436766B1 (ko) | 2014-11-03 |
WO2012090490A1 (ja) | 2012-07-05 |
CN103038889A (zh) | 2013-04-10 |
TWI430451B (zh) | 2014-03-11 |
TW201351662A (zh) | 2013-12-16 |
CN103474469A (zh) | 2013-12-25 |
KR20130088143A (ko) | 2013-08-07 |
TWI429089B (zh) | 2014-03-01 |
JP2012253315A (ja) | 2012-12-20 |
TW201232787A (en) | 2012-08-01 |
TW201351663A (zh) | 2013-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101258802B1 (ko) | 산화물 반도체 박막층을 갖는 적층 구조 및 박막 트랜지스터 | |
JP5295439B2 (ja) | 酸化物半導体薄膜層を有する積層構造の製造方法 | |
US9178076B2 (en) | Thin-film transistor | |
KR101446230B1 (ko) | 박막 트랜지스터의 반도체층용 산화물 및 스퍼터링 타깃과 박막 트랜지스터 | |
KR101948998B1 (ko) | 산화물 반도체막 및 반도체 디바이스 | |
KR20130018300A (ko) | 박막 트랜지스터의 반도체층용 산화물 및 스퍼터링 타깃, 및 박막 트랜지스터 | |
JP6178733B2 (ja) | 積層構造、その製造方法及び薄膜トランジスタ | |
TW201424008A (zh) | 薄膜電晶體 | |
JP5965107B2 (ja) | 薄膜トランジスタ | |
WO2023234163A1 (ja) | 積層構造及び薄膜トランジスタ | |
WO2023234164A1 (ja) | 積層構造及び薄膜トランジスタ | |
JP6470352B2 (ja) | 酸化物半導体薄膜 | |
TW202329392A (zh) | 結晶氧化物薄膜、積層體及薄膜電晶體 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
A302 | Request for accelerated examination | ||
E902 | Notification of reason for refusal | ||
A107 | Divisional application of patent | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20160318 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20170322 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20180403 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20190328 Year of fee payment: 7 |