KR101241076B1 - 단일상 유체 임프린트 리소그래피 방법 - Google Patents

단일상 유체 임프린트 리소그래피 방법 Download PDF

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Publication number
KR101241076B1
KR101241076B1 KR1020127011488A KR20127011488A KR101241076B1 KR 101241076 B1 KR101241076 B1 KR 101241076B1 KR 1020127011488 A KR1020127011488 A KR 1020127011488A KR 20127011488 A KR20127011488 A KR 20127011488A KR 101241076 B1 KR101241076 B1 KR 101241076B1
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South Korea
Prior art keywords
fluid
imprint
atmosphere
substrate
mold
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Korean (ko)
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KR20120052426A (ko
Inventor
이안 엠. 맥마킨
대니얼 에이. 밥스
듀안 제이. 보스
마이클 피. 씨. 와츠
반 엔. 트러스켓
프랭크 와이. 슈
로널드 디. 보이신
판카이 비. 라드
니콜라스 에이. 스테이시
오포다이크 에이. 에즈코예
Original Assignee
더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템
몰레큘러 임프린츠 인코퍼레이티드
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Publication of KR20120052426A publication Critical patent/KR20120052426A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
    • Y10S425/06—Vacuum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
    • Y10S425/815—Chemically inert or reactive atmosphere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020127011488A 2003-10-02 2004-09-24 단일상 유체 임프린트 리소그래피 방법 Expired - Fee Related KR101241076B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/677,639 2003-10-02
US10/677,639 US7090716B2 (en) 2003-10-02 2003-10-02 Single phase fluid imprint lithography method
PCT/US2004/031408 WO2005033797A2 (en) 2003-10-02 2004-09-24 Single phase fluid imprint lithography method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067006082A Division KR20060096424A (ko) 2003-10-02 2004-09-24 단일상 유체 임프린트 리소그래피 방법

Publications (2)

Publication Number Publication Date
KR20120052426A KR20120052426A (ko) 2012-05-23
KR101241076B1 true KR101241076B1 (ko) 2013-03-11

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020067006082A Ceased KR20060096424A (ko) 2003-10-02 2004-09-24 단일상 유체 임프린트 리소그래피 방법
KR1020127011488A Expired - Fee Related KR101241076B1 (ko) 2003-10-02 2004-09-24 단일상 유체 임프린트 리소그래피 방법
KR1020117022529A Expired - Fee Related KR101178432B1 (ko) 2003-10-02 2004-09-24 단일상 유체 임프린트 리소그래피 방법

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Country Status (9)

Country Link
US (3) US7090716B2 (enExample)
EP (1) EP1667778B1 (enExample)
JP (4) JP2007509769A (enExample)
KR (3) KR20060096424A (enExample)
CN (1) CN100482307C (enExample)
MY (1) MY135469A (enExample)
SG (1) SG128681A1 (enExample)
TW (1) TWI250560B (enExample)
WO (1) WO2005033797A2 (enExample)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010030511A1 (en) 2000-04-18 2001-10-18 Shunpei Yamazaki Display device
US20080160129A1 (en) 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7641840B2 (en) * 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US20070164476A1 (en) * 2004-09-01 2007-07-19 Wei Wu Contact lithography apparatus and method employing substrate deformation
US7641468B2 (en) * 2004-09-01 2010-01-05 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and method employing an effective pressure
US7205244B2 (en) * 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US20060062922A1 (en) 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060081557A1 (en) 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US8721952B2 (en) * 2004-11-16 2014-05-13 International Business Machines Corporation Pneumatic method and apparatus for nano imprint lithography having a conforming mask
US7377764B2 (en) * 2005-06-13 2008-05-27 Asml Netherlands B.V. Imprint lithography
US7670534B2 (en) * 2005-09-21 2010-03-02 Molecular Imprints, Inc. Method to control an atmosphere between a body and a substrate
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
KR101293059B1 (ko) * 2005-12-08 2013-08-05 몰레큘러 임프린츠 인코퍼레이티드 기판과 몰드 사이에 위치되는 기체를 축출하기 위한 방법
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
CN101535021A (zh) 2005-12-08 2009-09-16 分子制模股份有限公司 用于衬底双面图案形成的方法和系统
US20070138699A1 (en) * 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US7462028B2 (en) * 2006-04-03 2008-12-09 Molecular Imprints, Inc. Partial vacuum environment imprinting
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
DE102006024524A1 (de) * 2006-05-23 2007-12-06 Von Ardenne Anlagentechnik Gmbh Infrarotstrahlung reflektierendes, transparentes Schichtsystem
TW200842934A (en) * 2006-12-29 2008-11-01 Molecular Imprints Inc Imprint fluid control
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US8144309B2 (en) * 2007-09-05 2012-03-27 Asml Netherlands B.V. Imprint lithography
US8119052B2 (en) * 2007-11-02 2012-02-21 Molecular Imprints, Inc. Drop pattern generation for imprint lithography
SG185929A1 (en) * 2007-11-21 2012-12-28 Molecular Imprints Inc Porous template and imprinting stack for nano-imprint lithography
US8945444B2 (en) * 2007-12-04 2015-02-03 Canon Nanotechnologies, Inc. High throughput imprint based on contact line motion tracking control
TW200932502A (en) * 2008-01-18 2009-08-01 Univ Nat Taiwan An improved embossing apparatus
US8361371B2 (en) * 2008-02-08 2013-01-29 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US8187515B2 (en) * 2008-04-01 2012-05-29 Molecular Imprints, Inc. Large area roll-to-roll imprint lithography
US20100072671A1 (en) * 2008-09-25 2010-03-25 Molecular Imprints, Inc. Nano-imprint lithography template fabrication and treatment
US8470188B2 (en) * 2008-10-02 2013-06-25 Molecular Imprints, Inc. Nano-imprint lithography templates
US20100096764A1 (en) * 2008-10-20 2010-04-22 Molecular Imprints, Inc. Gas Environment for Imprint Lithography
US8586126B2 (en) 2008-10-21 2013-11-19 Molecular Imprints, Inc. Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement
US8512797B2 (en) * 2008-10-21 2013-08-20 Molecular Imprints, Inc. Drop pattern generation with edge weighting
US20100104852A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
US20100112220A1 (en) * 2008-11-03 2010-05-06 Molecular Imprints, Inc. Dispense system set-up and characterization
KR101678040B1 (ko) * 2008-12-04 2016-11-21 에이에스엠엘 네델란즈 비.브이. 임프린트 리소그래피 장치 및 방법
JP5175771B2 (ja) * 2009-02-27 2013-04-03 株式会社日立ハイテクノロジーズ 微細構造転写装置及び微細構造転写方法
JP2012522327A (ja) * 2009-03-23 2012-09-20 インテバック・インコーポレイテッド パターニングされた媒体の溝と島の比率の最適化のための方法
JP2011023660A (ja) * 2009-07-17 2011-02-03 Toshiba Corp パターン転写方法
US20120292820A1 (en) * 2009-11-02 2012-11-22 Nil Technology Aps Method and device for nanoimprint lithography
US20110140304A1 (en) * 2009-12-10 2011-06-16 Molecular Imprints, Inc. Imprint lithography template
WO2011094317A2 (en) * 2010-01-26 2011-08-04 Molecular Imprints, Inc. Micro-conformal templates for nanoimprint lithography
US20110180964A1 (en) * 2010-01-27 2011-07-28 Molecular Imprints. Inc. Systems and methods for substrate formation
US20110189329A1 (en) * 2010-01-29 2011-08-04 Molecular Imprints, Inc. Ultra-Compliant Nanoimprint Lithography Template
WO2011100050A2 (en) * 2010-02-09 2011-08-18 Molecular Imprints, Inc. Process gas confinement for nano-imprinting
JP5491931B2 (ja) * 2010-03-30 2014-05-14 富士フイルム株式会社 ナノインプリント方法およびモールド製造方法
JP5597031B2 (ja) 2010-05-31 2014-10-01 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
JP5828626B2 (ja) * 2010-10-04 2015-12-09 キヤノン株式会社 インプリント方法
JP5679850B2 (ja) * 2011-02-07 2015-03-04 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5787691B2 (ja) * 2011-09-21 2015-09-30 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP5882922B2 (ja) * 2012-01-19 2016-03-09 キヤノン株式会社 インプリント方法、およびインプリント装置
US9278857B2 (en) 2012-01-31 2016-03-08 Seagate Technology Inc. Method of surface tension control to reduce trapped gas bubbles
JP6304921B2 (ja) * 2012-06-05 2018-04-04 キヤノン株式会社 インプリント方法およびインプリント装置、それを用いた物品の製造方法
JP5716876B2 (ja) * 2012-10-04 2015-05-13 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6748399B2 (ja) 2012-11-30 2020-09-02 キヤノン株式会社 インプリント方法およびインプリント用硬化性組成物
JP6230041B2 (ja) * 2013-04-18 2017-11-15 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
KR102056902B1 (ko) 2013-05-29 2019-12-18 삼성전자주식회사 와이어 그리드 편광판 및 이를 구비하는 액정 표시패널 및 액정 표시장치
KR102089661B1 (ko) 2013-08-27 2020-03-17 삼성전자주식회사 와이어 그리드 편광판 및 이를 구비하는 액정 표시패널 및 액정 표시장치
JP5865332B2 (ja) 2013-11-01 2016-02-17 キヤノン株式会社 インプリント装置、物品の製造方法、及びインプリント方法
CN105706214B (zh) * 2013-11-06 2018-10-02 佳能株式会社 用于确定压印模具的图案的方法、压印方法和装置
JP6294679B2 (ja) 2014-01-21 2018-03-14 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6445772B2 (ja) * 2014-03-17 2018-12-26 キヤノン株式会社 インプリント装置及び物品の製造方法
EP2960059B1 (en) 2014-06-25 2018-10-24 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11267012B2 (en) * 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
US11220737B2 (en) 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
JP2015005760A (ja) * 2014-07-31 2015-01-08 キヤノン株式会社 インプリント装置、および物品の製造方法
JP6525567B2 (ja) 2014-12-02 2019-06-05 キヤノン株式会社 インプリント装置及び物品の製造方法
JP6628491B2 (ja) * 2015-04-13 2020-01-08 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
JP5989177B2 (ja) * 2015-04-20 2016-09-07 キヤノン株式会社 インプリント装置、および物品の製造方法
US10566534B2 (en) 2015-10-12 2020-02-18 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
KR101968471B1 (ko) 2017-01-30 2019-04-11 배용주 전기를 발생시키고 저장하는 장치
US10895806B2 (en) * 2017-09-29 2021-01-19 Canon Kabushiki Kaisha Imprinting method and apparatus
US10684407B2 (en) * 2017-10-30 2020-06-16 Facebook Technologies, Llc Reactivity enhancement in ion beam etcher
JP7210155B2 (ja) 2018-04-16 2023-01-23 キヤノン株式会社 装置、方法、および物品製造方法
US11137536B2 (en) 2018-07-26 2021-10-05 Facebook Technologies, Llc Bragg-like gratings on high refractive index material
US11226446B2 (en) 2020-05-06 2022-01-18 Facebook Technologies, Llc Hydrogen/nitrogen doping and chemically assisted etching of high refractive index gratings
US11590687B2 (en) 2020-06-30 2023-02-28 Canon Kabushiki Kaisha Systems and methods for reducing pressure while shaping a film
JP7669199B2 (ja) 2021-06-07 2025-04-28 キヤノン株式会社 インプリント装置、インプリント方法、コンピュータプログラム、及び物品の製造方法
CN118605080B (zh) * 2024-06-18 2025-05-27 联合微电子中心有限责任公司 纳米压印方法及纳米压印模具

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6428852B1 (en) * 1998-07-02 2002-08-06 Mykrolis Corporation Process for coating a solid surface with a liquid composition

Family Cites Families (220)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783520A (en) * 1970-09-28 1974-01-08 Bell Telephone Labor Inc High accuracy alignment procedure utilizing moire patterns
US3997447A (en) * 1974-06-07 1976-12-14 Composite Sciences, Inc. Fluid processing apparatus
FR2325018A1 (fr) * 1975-06-23 1977-04-15 Ibm Dispositif de mesure d'intervalle pour definir la distance entre deux faces ou plus
IT1068535B (it) 1975-11-03 1985-03-21 Ibm Apparecchio e processo elettrolito grafico
DE2800476A1 (de) 1977-01-07 1978-07-13 Instruments Sa Verfahren zur duplizierung einer optischen flaeche sowie so hergestelltes beugungsgitter
JPS577931Y2 (enExample) 1977-06-03 1982-02-16
US4201800A (en) * 1978-04-28 1980-05-06 International Business Machines Corp. Hardened photoresist master image mask process
JPS6053675B2 (ja) * 1978-09-20 1985-11-27 富士写真フイルム株式会社 スピンコ−テイング方法
JPS605935Y2 (ja) 1978-12-05 1985-02-25 アイダエンジニアリング株式会社 フィ−ドバ−移動装置
US4279628A (en) * 1979-12-31 1981-07-21 Energy Synergistics, Inc. Apparatus for drying a natural gas stream
DE8007086U1 (de) * 1980-03-14 1982-03-18 Multivac Sepp Haggenmüller KG, 8941 Wolfertschwenden Vorrichtung zum formen von behaeltnissen aus einer folie
JPS5884808A (ja) 1981-11-13 1983-05-21 Nippon Synthetic Chem Ind Co Ltd:The 樹脂状物質の製造法
JPS58129074U (ja) 1982-02-26 1983-09-01 株式会社日立製作所 筒型水車のランナ−ボス油加圧用の空気室
US4426247A (en) * 1982-04-12 1984-01-17 Nippon Telegraph & Telephone Public Corporation Method for forming micropattern
US4544572A (en) 1982-09-07 1985-10-01 Minnesota Mining And Manufacturing Company Coated ophthalmic lenses and method for coating the same
US4451507A (en) * 1982-10-29 1984-05-29 Rca Corporation Automatic liquid dispensing apparatus for spinning surface of uniform thickness
FR2538923A1 (fr) * 1982-12-30 1984-07-06 Thomson Csf Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent
US4507331A (en) * 1983-12-12 1985-03-26 International Business Machines Corporation Dry process for forming positive tone micro patterns
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
US4552833A (en) 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
JPS61147826A (ja) 1984-12-20 1986-07-05 Mitsubishi Alum Co Ltd 合金製造装置
US4908298A (en) * 1985-03-19 1990-03-13 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4767584A (en) * 1985-04-03 1988-08-30 Massachusetts Institute Of Technology Process of and apparatus for producing design patterns in materials
DE3514022C1 (de) * 1985-04-18 1986-07-10 Fa. Carl Freudenberg, 6940 Weinheim Vorrichtung zum gegenseitigen Verkleben thermisch erweichbarer Partikel zu einem Kunststoffkoerper
EP0245461A1 (en) 1985-11-18 1987-11-19 EASTMAN KODAK COMPANY (a New Jersey corporation) Process for making optical recording media
EP0228671A1 (en) 1985-12-23 1987-07-15 General Electric Company Method for the production of a coated substrate with controlled surface characteristics
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
US4692205A (en) 1986-01-31 1987-09-08 International Business Machines Corporation Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings
GB8610671D0 (en) * 1986-05-01 1986-06-04 Atomic Energy Authority Uk Flow monitoring
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
KR900004269B1 (ko) * 1986-06-11 1990-06-18 가부시기가이샤 도시바 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치
DE3760773D1 (en) * 1986-07-25 1989-11-16 Oki Electric Ind Co Ltd Negative resist material, method for its manufacture and method for using it
JPS6376330A (ja) 1986-09-18 1988-04-06 Oki Electric Ind Co Ltd 半導体装置の製造方法
US4707218A (en) 1986-10-28 1987-11-17 International Business Machines Corporation Lithographic image size reduction
US4931351A (en) * 1987-01-12 1990-06-05 Eastman Kodak Company Bilayer lithographic process
US5736424A (en) * 1987-02-27 1998-04-07 Lucent Technologies Inc. Device fabrication involving planarization
US6391798B1 (en) * 1987-02-27 2002-05-21 Agere Systems Guardian Corp. Process for planarization a semiconductor substrate
JPS63138730U (enExample) 1987-03-03 1988-09-13
US4731155A (en) * 1987-04-15 1988-03-15 General Electric Company Process for forming a lithographic mask
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
US4936951A (en) 1987-10-26 1990-06-26 Matsushita Electric Industrial Co., Ltd. Method of reducing proximity effect in electron beam resists
US5028366A (en) * 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
JPH01196749A (ja) 1988-01-30 1989-08-08 Hoya Corp 光情報記録媒体用基板の製造方法
US4891303A (en) * 1988-05-26 1990-01-02 Texas Instruments Incorporated Trilayer microlithographic process using a silicon-based resist as the middle layer
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
JPH0224848A (ja) 1988-07-14 1990-01-26 Canon Inc 光記録媒体用基板の製造方法
JPH0269936A (ja) 1988-07-28 1990-03-08 Siemens Ag 半導体材料上の樹脂構造の形成方法
US5108875A (en) * 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
US4921778A (en) * 1988-07-29 1990-05-01 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
EP0355496A3 (en) 1988-08-15 1990-10-10 Sumitomo Heavy Industries Co., Ltd. Position detector employing a sector fresnel zone plate
JP2546350B2 (ja) 1988-09-09 1996-10-23 キヤノン株式会社 位置合わせ装置
JPH0292603A (ja) 1988-09-30 1990-04-03 Hoya Corp 案内溝付き情報記録用基板の製造方法
US4964945A (en) 1988-12-09 1990-10-23 Minnesota Mining And Manufacturing Company Lift off patterning process on a flexible substrate
US5439766A (en) 1988-12-30 1995-08-08 International Business Machines Corporation Composition for photo imaging
JPH02192045A (ja) 1989-01-20 1990-07-27 Fujitsu Ltd 光ディスク基板の製造方法
CA2010169A1 (en) 1989-02-21 1990-08-21 Masakazu Uekita Multi-layer resist
US4999280A (en) * 1989-03-17 1991-03-12 International Business Machines Corporation Spray silylation of photoresist images
US5169494A (en) 1989-03-27 1992-12-08 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
ES2103261T3 (es) 1989-04-24 1997-09-16 Siemens Ag Procedimiento para la generacion de estructuras resistentes a la corrosion.
JP3001607B2 (ja) 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
US5053318A (en) 1989-05-18 1991-10-01 Shipley Company Inc. Plasma processing with metal mask integration
CA2011927C (en) * 1989-06-02 1996-12-24 Alan Lee Sidman Microlithographic method for producing thick, vertically-walled photoresist patterns
US4919748A (en) * 1989-06-30 1990-04-24 At&T Bell Laboratories Method for tapered etching
JP2704001B2 (ja) 1989-07-18 1998-01-26 キヤノン株式会社 位置検出装置
US5151754A (en) 1989-10-06 1992-09-29 Kabushiki Kaisha Toshiba Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects
US5362606A (en) 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
JP3197010B2 (ja) * 1990-03-05 2001-08-13 株式会社東芝 間隔設定方法及び間隔設定装置
US5328810A (en) * 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
JP2586692B2 (ja) * 1990-05-24 1997-03-05 松下電器産業株式会社 パターン形成材料およびパターン形成方法
JP2524436B2 (ja) 1990-09-18 1996-08-14 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面処理方法
JP2977091B2 (ja) * 1990-09-28 1999-11-10 安藤電気株式会社 ヘテロダイン受光を用いた光パルス試験器
US5314772A (en) * 1990-10-09 1994-05-24 Arizona Board Of Regents High resolution, multi-layer resist for microlithography and method therefor
US5240878A (en) 1991-04-26 1993-08-31 International Business Machines Corporation Method for forming patterned films on a substrate
US5212147A (en) * 1991-05-15 1993-05-18 Hewlett-Packard Company Method of forming a patterned in-situ high Tc superconductive film
US5421981A (en) * 1991-06-26 1995-06-06 Ppg Industries, Inc. Electrochemical sensor storage device
EP0524759A1 (en) 1991-07-23 1993-01-27 AT&T Corp. Device fabrication process
US5242711A (en) 1991-08-16 1993-09-07 Rockwell International Corp. Nucleation control of diamond films by microlithographic patterning
JPH0580530A (ja) 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
US5263073A (en) * 1991-12-20 1993-11-16 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Scanning systems for high resolution E-beam and X-ray lithography
JPH05206095A (ja) * 1992-01-28 1993-08-13 Fujitsu Ltd 超音波処理槽と枚葉式基板処理装置
US5244818A (en) 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
US5545367A (en) * 1992-04-15 1996-08-13 Soane Technologies, Inc. Rapid prototype three dimensional stereolithography
FR2690375B1 (fr) * 1992-04-22 1994-07-08 Aerospatiale Dispositif de compactage a chaud pour la fabrication de pieces necessitant des montees en pression et en temperature simultanees.
US5376810A (en) 1992-06-26 1994-12-27 California Institute Of Technology Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response
US5601641A (en) * 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
TW227628B (enExample) * 1992-12-10 1994-08-01 Samsung Electronics Co Ltd
DE69405451T2 (de) * 1993-03-16 1998-03-12 Koninkl Philips Electronics Nv Verfahren und Vorrichtung zur Herstellung eines strukturierten Reliefbildes aus vernetztem Photoresist auf einer flachen Substratoberfläche
US5380474A (en) * 1993-05-20 1995-01-10 Sandia Corporation Methods for patterned deposition on a substrate
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
JP2837063B2 (ja) * 1993-06-04 1998-12-14 シャープ株式会社 レジストパターンの形成方法
US6776094B1 (en) 1993-10-04 2004-08-17 President & Fellows Of Harvard College Kit For Microcontact Printing
US5776748A (en) * 1993-10-04 1998-07-07 President And Fellows Of Harvard College Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor
US5512131A (en) * 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US5900160A (en) * 1993-10-04 1999-05-04 President And Fellows Of Harvard College Methods of etching articles via microcontact printing
US6180239B1 (en) * 1993-10-04 2001-01-30 President And Fellows Of Harvard College Microcontact printing on surfaces and derivative articles
NL9401260A (nl) * 1993-11-12 1995-06-01 Cornelis Johannes Maria Van Ri Membraan voor microfiltratie, ultrafiltratie, gasscheiding en katalyse, werkwijze ter vervaardiging van een dergelijk membraan, mal ter vervaardiging van een dergelijk membraan, alsmede diverse scheidingssystemen omvattende een dergelijk membraan.
JPH07178762A (ja) * 1993-12-24 1995-07-18 Sanyo Silicon Denshi Kk 樹脂成形方法および樹脂成形用金型
KR970009858B1 (ko) 1994-01-12 1997-06-18 엘지반도체 주식회사 다층 레지스트 패턴 형성방법
US5534101A (en) * 1994-03-02 1996-07-09 Telecommunication Research Laboratories Method and apparatus for making optical components by direct dispensing of curable liquid
US5417802A (en) * 1994-03-18 1995-05-23 At&T Corp. Integrated circuit manufacturing
US5453157A (en) 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
US5670415A (en) * 1994-05-24 1997-09-23 Depositech, Inc. Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment
US5512335A (en) * 1994-06-27 1996-04-30 International Business Machines Corporation Fluid treatment device with vibrational energy means
US5458520A (en) 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5849209A (en) 1995-03-31 1998-12-15 Johnson & Johnson Vision Products, Inc. Mold material made with additives
US5743998A (en) * 1995-04-19 1998-04-28 Park Scientific Instruments Process for transferring microminiature patterns using spin-on glass resist media
US5820769A (en) * 1995-05-24 1998-10-13 Regents Of The University Of Minnesota Method for making magnetic storage having discrete elements with quantized magnetic moments
US5948570A (en) 1995-05-26 1999-09-07 Lucent Technologies Inc. Process for dry lithographic etching
US5997273A (en) * 1995-08-01 1999-12-07 Laquer; Henry Louis Differential pressure HIP forging in a controlled gaseous environment
US5654238A (en) 1995-08-03 1997-08-05 International Business Machines Corporation Method for etching vertical contact holes without substrate damage caused by directional etching
US5849222A (en) 1995-09-29 1998-12-15 Johnson & Johnson Vision Products, Inc. Method for reducing lens hole defects in production of contact lens blanks
US20040137734A1 (en) 1995-11-15 2004-07-15 Princeton University Compositions and processes for nanoimprinting
US6309580B1 (en) 1995-11-15 2001-10-30 Regents Of The University Of Minnesota Release surfaces, particularly for use in nanoimprint lithography
US7758794B2 (en) 2001-10-29 2010-07-20 Princeton University Method of making an article comprising nanoscale patterns with reduced edge roughness
US6518189B1 (en) 1995-11-15 2003-02-11 Regents Of The University Of Minnesota Method and apparatus for high density nanostructures
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6482742B1 (en) 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US20040036201A1 (en) * 2000-07-18 2004-02-26 Princeton University Methods and apparatus of field-induced pressure imprint lithography
US20030080471A1 (en) * 2001-10-29 2003-05-01 Chou Stephen Y. Lithographic method for molding pattern with nanoscale features
US5669303A (en) * 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6355198B1 (en) * 1996-03-15 2002-03-12 President And Fellows Of Harvard College Method of forming articles including waveguides via capillary micromolding and microtransfer molding
US6257866B1 (en) * 1996-06-18 2001-07-10 Hy-Tech Forming Systems, Inc. Apparatus for accurately forming plastic sheet
US6039897A (en) * 1996-08-28 2000-03-21 University Of Washington Multiple patterned structures on a single substrate fabricated by elastomeric micro-molding techniques
JP3783170B2 (ja) * 1996-11-19 2006-06-07 同和鉱業株式会社 樹脂成形装置
US5895263A (en) * 1996-12-19 1999-04-20 International Business Machines Corporation Process for manufacture of integrated circuit device
US6143412A (en) 1997-02-10 2000-11-07 President And Fellows Of Harvard College Fabrication of carbon microstructures
CN1080635C (zh) * 1997-04-01 2002-03-13 株式会社理光 塑料模塑品及其成形方法、模具及成形装置
US5948470A (en) 1997-04-28 1999-09-07 Harrison; Christopher Method of nanoscale patterning and products made thereby
US5948219A (en) 1997-05-07 1999-09-07 Advanced Micro Devices, Inc. Apparatus for selectively exposing a semiconductor topography to an electric field
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US6033977A (en) * 1997-06-30 2000-03-07 Siemens Aktiengesellschaft Dual damascene structure
WO1999005724A1 (en) 1997-07-25 1999-02-04 Regents Of The University Of Minnesota Single-electron floating-gate mos memory
US5912049A (en) * 1997-08-12 1999-06-15 Micron Technology, Inc. Process liquid dispense method and apparatus
US5991022A (en) 1997-12-09 1999-11-23 N&K Technology, Inc. Reflectance spectrophotometric apparatus with toroidal mirrors
US6150680A (en) 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
DE19819761C2 (de) * 1998-05-04 2000-05-31 Jenoptik Jena Gmbh Einrichtung zur Trennung eines geformten Substrates von einem Prägewerkzeug
JP3780700B2 (ja) 1998-05-26 2006-05-31 セイコーエプソン株式会社 パターン形成方法、パターン形成装置、パターン形成用版、パターン形成用版の製造方法、カラーフィルタの製造方法、導電膜の製造方法及び液晶パネルの製造方法
US6150231A (en) 1998-06-15 2000-11-21 Siemens Aktiengesellschaft Overlay measurement technique using moire patterns
US6099771A (en) * 1998-07-08 2000-08-08 Lear Corporation Vacuum compression method for forming molded thermoplastic floor mat having a "Class A" finish
US5907782A (en) * 1998-08-15 1999-05-25 Acer Semiconductor Manufacturing Inc. Method of forming a multiple fin-pillar capacitor for a high density dram cell
US6096655A (en) 1998-09-02 2000-08-01 International Business Machines, Corporation Method for forming vias and trenches in an insulation layer for a dual-damascene multilevel interconnection structure
US6713238B1 (en) * 1998-10-09 2004-03-30 Stephen Y. Chou Microscale patterning and articles formed thereby
WO2000021689A1 (en) 1998-10-09 2000-04-20 The Trustees Of Princeton University Microscale patterning and articles formed thereby
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6168845B1 (en) * 1999-01-19 2001-01-02 International Business Machines Corporation Patterned magnetic media and method of making the same using selective oxidation
US6274294B1 (en) 1999-02-03 2001-08-14 Electroformed Stents, Inc. Cylindrical photolithography exposure process and apparatus
US6565928B2 (en) * 1999-03-08 2003-05-20 Tokyo Electron Limited Film forming method and film forming apparatus
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6569481B1 (en) * 1999-03-29 2003-05-27 The Quaker Oats Company Method for making a puffed food starch product
JP4286374B2 (ja) 1999-03-30 2009-06-24 新日鐵化学株式会社 シリコーン樹脂及びこれを含有する感光性樹脂組成物
US6387783B1 (en) * 1999-04-26 2002-05-14 International Business Machines Corporation Methods of T-gate fabrication using a hybrid resist
JP3291488B2 (ja) * 1999-05-27 2002-06-10 三洋電機株式会社 流体の被除去物除去方法
US6255022B1 (en) * 1999-06-17 2001-07-03 Taiwan Semiconductor Manufacturing Company Dry development process for a bi-layer resist system utilized to reduce microloading
JP2001143982A (ja) * 1999-06-29 2001-05-25 Applied Materials Inc 半導体デバイス製造のための統合臨界寸法制御
US6383928B1 (en) * 1999-09-02 2002-05-07 Texas Instruments Incorporated Post copper CMP clean
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6329256B1 (en) 1999-09-24 2001-12-11 Advanced Micro Devices, Inc. Self-aligned damascene gate formation with low gate resistance
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
DE19958966A1 (de) * 1999-12-07 2001-06-13 Infineon Technologies Ag Erzeugung von Resiststrukturen
ATE294648T1 (de) * 1999-12-23 2005-05-15 Univ Massachusetts Verfahren zur herstellung von submikron mustern auf filmen
JP3847512B2 (ja) * 2000-02-07 2006-11-22 株式会社日立メディコ 磁気共鳴イメージング装置
SE515962C2 (sv) 2000-03-15 2001-11-05 Obducat Ab Anordning för överföring av mönster till objekt
US6245581B1 (en) * 2000-04-19 2001-06-12 Advanced Micro Devices, Inc. Method and apparatus for control of critical dimension using feedback etch control
SE516414C2 (sv) 2000-05-24 2002-01-15 Obducat Ab Metod vid tillverkning av en mall, samt mallen tillverkad därav
JP2001358056A (ja) * 2000-06-15 2001-12-26 Canon Inc 露光装置
WO2002008835A2 (en) * 2000-07-16 2002-01-31 Board Of Regents, The University Of Texas System High-resolution overlay alignment methods and systems for imprint lithography
EP2270592B1 (en) * 2000-07-17 2015-09-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US20050037143A1 (en) * 2000-07-18 2005-02-17 Chou Stephen Y. Imprint lithography with improved monitoring and control and apparatus therefor
US7635262B2 (en) * 2000-07-18 2009-12-22 Princeton University Lithographic apparatus for fluid pressure imprint lithography
US7211214B2 (en) * 2000-07-18 2007-05-01 Princeton University Laser assisted direct imprint lithography
US6326627B1 (en) 2000-08-02 2001-12-04 Archimedes Technology Group, Inc. Mass filtering sputtered ion source
US6777170B1 (en) 2000-08-04 2004-08-17 Massachusetts Institute Of Technology Stereolithographic patterning by variable dose light delivery
US6730256B1 (en) * 2000-08-04 2004-05-04 Massachusetts Institute Of Technology Stereolithographic patterning with interlayer surface modifications
US6455411B1 (en) 2000-09-11 2002-09-24 Texas Instruments Incorporated Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics
EP2306242A3 (en) * 2000-10-12 2011-11-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
JP3721320B2 (ja) 2000-11-01 2005-11-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US6632742B2 (en) 2001-04-18 2003-10-14 Promos Technologies Inc. Method for avoiding defects produced in the CMP process
US6489068B1 (en) 2001-02-21 2002-12-03 Advanced Micro Devices, Inc. Process for observing overlay errors on lithographic masks
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use
US6534418B1 (en) * 2001-04-30 2003-03-18 Advanced Micro Devices, Inc. Use of silicon containing imaging layer to define sub-resolution gate structures
US6541360B1 (en) * 2001-04-30 2003-04-01 Advanced Micro Devices, Inc. Bi-layer trim etch process to form integrated circuit gate structures
US6847433B2 (en) * 2001-06-01 2005-01-25 Agere Systems, Inc. Holder, system, and process for improving overlay in lithography
TW488080B (en) 2001-06-08 2002-05-21 Au Optronics Corp Method for producing thin film transistor
US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
CA2454570C (en) 2001-07-25 2016-12-20 The Trustees Of Princeton University Nanochannel arrays and their preparation and use for high throughput macromolecular analysis
JP3978706B2 (ja) * 2001-09-20 2007-09-19 セイコーエプソン株式会社 微細構造体の製造方法
WO2003035932A1 (en) * 2001-09-25 2003-05-01 Minuta Technology Co., Ltd. Method for forming a micro-pattern on a substrate by using capillary force
US6716767B2 (en) * 2001-10-31 2004-04-06 Brewer Science, Inc. Contact planarization materials that generate no volatile byproducts or residue during curing
JP3850718B2 (ja) * 2001-11-22 2006-11-29 株式会社東芝 加工方法
US6890688B2 (en) * 2001-12-18 2005-05-10 Freescale Semiconductor, Inc. Lithographic template and method of formation and use
US6737202B2 (en) * 2002-02-22 2004-05-18 Motorola, Inc. Method of fabricating a tiered structure using a multi-layered resist stack and use
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
CN100373528C (zh) 2002-03-15 2008-03-05 普林斯顿大学 激光辅助直接压印平板印刷术
US6881366B2 (en) 2002-04-22 2005-04-19 International Business Machines Corporation Process of fabricating a precision microcontact printing stamp
US6743713B2 (en) * 2002-05-15 2004-06-01 Institute Of Microelectronics Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC)
US6849558B2 (en) * 2002-05-22 2005-02-01 The Board Of Trustees Of The Leland Stanford Junior University Replication and transfer of microstructures and nanostructures
KR20050036912A (ko) * 2002-05-24 2005-04-20 스티븐 와이. 추 필드-유도 압력 각인 리소그라피 방법 및 장치
US6900881B2 (en) * 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
MY144124A (en) 2002-07-11 2011-08-15 Molecular Imprints Inc Step and repeat imprint lithography systems
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
TWI266970B (en) 2002-08-01 2006-11-21 Molecular Imprints Inc Scatterometry alignment for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
JP2004071934A (ja) * 2002-08-08 2004-03-04 Kanegafuchi Chem Ind Co Ltd 微細パターンの製造方法および転写材料
JP3700001B2 (ja) * 2002-09-10 2005-09-28 独立行政法人産業技術総合研究所 インプリント方法及び装置
US7750059B2 (en) * 2002-12-04 2010-07-06 Hewlett-Packard Development Company, L.P. Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
US7441008B2 (en) 2002-12-18 2008-10-21 International Business Machines Corporation Method for correlating transactions and messages
US6986815B2 (en) * 2003-01-08 2006-01-17 General Electric Company Flow system flush process
US7104268B2 (en) * 2003-01-10 2006-09-12 Akrion Technologies, Inc. Megasonic cleaning system with buffered cavitation method
US6770852B1 (en) 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
WO2004086471A1 (en) 2003-03-27 2004-10-07 Korea Institute Of Machinery & Materials Uv nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization
CN100526052C (zh) 2003-06-09 2009-08-12 普林斯顿大学知识产权和技术许可办公室 具有改进的监测和控制的压印光刻术及其设备
TWI228638B (en) * 2003-06-10 2005-03-01 Ind Tech Res Inst Method for and apparatus for bonding patterned imprint to a substrate by adhering means
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6428852B1 (en) * 1998-07-02 2002-08-06 Mykrolis Corporation Process for coating a solid surface with a liquid composition

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US7270533B2 (en) 2007-09-18
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