TWI250560B - Single phase fluid imprint lithography method - Google Patents
Single phase fluid imprint lithography method Download PDFInfo
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- TWI250560B TWI250560B TW093129415A TW93129415A TWI250560B TW I250560 B TWI250560 B TW I250560B TW 093129415 A TW093129415 A TW 093129415A TW 93129415 A TW93129415 A TW 93129415A TW I250560 B TWI250560 B TW I250560B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
- Y10S425/06—Vacuum
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S425/00—Plastic article or earthenware shaping or treating: apparatus
- Y10S425/815—Chemically inert or reactive atmosphere
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Description
1250560 九、發明說明: 【發明所屬之技術領域1 本發明的領域概有關於壓印技術。更具言之,本發明 係在壓印微影製程中藉減少或消除壓印層内所存在的氣 5 體,而來減少圖案的失真變形者。 【先前技術3 發明背景 微製造係包括製造非常小的結構,例如具有微米尺寸 或更小特徵的細構。一曾受微製造甚大衝擊的領域係為積 10 體電路的處理。因為半導體製造產業持續致力於提高生產 良率,並同時增加在一基板上之每單位面積所設的電路, 故微製造變得愈來愈重要。微製造可提供更大的製程控 制,並能減少所設結構的最小特徵尺寸。其它已使用微製 造的發展領域包括生物科技、光學技術、機械系統等等。 15 一微製造技術之例曾示於Willson等人的第6,334,960號 美國專利中,Wmson等人揭露在一結構中製造一凸紋影像 的方法。該方法包括提供一具有一移轉層的基材。該移轉 層會被覆以一可聚合化流體成分。一模件會與該可聚合流 體形成機械式接觸。該模件包含一凸紋結構,而該可聚合 20 流體成分會填滿其凸紋結構。該可聚合成分嗣會接受處理 來固化並聚合化,而在該移轉層上形成一固化的聚合材 料,其會含有一凸紋結構互補於該模件的凸紋。該模件嗣 會與該固體聚合材料分開,而使該模件中的凸紋結構之一 複製圖案形成於該固化的聚合材料中。該移轉層與該固化 1250560 的聚合材料嗣會被置於一環境中而相對於該聚合材料來選 擇性地蝕刻該移轉層,以使一凸紋影像形成於該移轉層 中。該技術所需的時間和所能提供的最小特徵尺寸係取決 於該可聚合化材料的成分等等。 5 另於Chou的第5,772,905號美國專利中揭露一種可在一 基材上的薄膜中造成超細(25nm以下)圖案的微影製法和裝 置,其中有一模件具有至少一凸出細構而會被壓入一設在 一基材上的薄膜中。在該模件中的凸出細構會造成該薄膜 上的凹槽。該模件會由該薄膜上移除。該薄膜嗣會被處理, 10 以將該凹槽内的薄膜除去,而曝露出底下的基材。如此, 該模件中的圖案即會複製於該薄膜中,而完成該微影製 法。在後續製程中,在該薄膜内的圖案將會被重製於該基 材中或者被附設於基材上的其它材料中。 又另一種壓印微影技術係由Chou等人揭於2002年1月 15 份的 Nature,Col.417,ρρ·835〜837 之“Ultrafast and Direct Imprint of Nanostructures in Silicon” 中,其係被稱為雷射輔 助的直接壓印(LADI)法。於此製法中,一基材之一區域會 被以雷射來加熱而形成可流動的,譬如被液化。在該區域 達到一所需黏度之後,一其上具有一圖案的模件會被置入 20 來與該區域接觸。該可流動區域會順應於該圖案的廓形, 嗣會被冷卻而將該圖案固化於該基材中。上述技術之一問 題係會由於大氣存在靠近於該可流動區域而造成圖案的變 形失真。 因此,乃期能提供一種系統來減少使用壓印微影技術 1250560 所製成之圖案中的變形失真。 【發明内容】 發明概要 本發明係有關一種可大量減少存在於一層沉積在一基 5 材上之黏性液體中的氣袋而來消減圖案變形的方法。其 中,該方法包括以和該黏性液體具有不同遷移特性的氣體 來配佈靠近於該模件。具言之,即令靠近於該基材的氛圍 充滿某些氣體,其比被沉積的黏性液體具有較高的溶解度 及/或較高的擴散性。可附加地或取代提供上述的氛圍,該 10 氛圍的壓力亦可被減少。使用這種方法可促進該等無變形 壓印物的快速製造。這些及其它的實施例將會更完整地詳 述於後。 圖式簡單說明 第1圖為本發明之一微影系統的立體圖; 15 第2圖為第1圖所示之微影系統的簡化平面圖; 第3圖為一用來製造第2圖之壓印層的材料在被聚合化 及交鏈之前的簡化示意圖; 第4圖為第3圖所示的材料在被照射輻射之後轉變成交 鏈聚合材料的簡化示意圖; 20 第5圖為第1圖所示的模件在圖案化該壓印層之後與該 壓印層間隔分開的簡化平面圖; 第6圖為第5圖所示的基材在第一壓印層的圖案移轉於 其上之後,有一添加的壓印層佈設於該基材頂上的簡化平 面圖; 7 1250560 第7圖為第1圖所示之印頭的立體圖; 第8圖為本發明之一吸盤系統的截面圖; 胃9®為第7圖所示之印頭的截面圖;及 第10圖為第9圖所示之印頭的底視立體圖。 5 【實施冷式】 本發明的詳細|兒明 第1圖不出本發明之一實施例的光微影系統丨〇,其包含 一對間隔分開的橋座12具有一橋架14與一枱座16延伸其 間。该橋架14和枱座16係間隔分開。有一印頭18連結於該 10橋架14,其會由該橋架14朝向枱座16延伸,並能沿z軸移 動。有一移動枱20設在枱座16上而面對印頭18。該移動枱 20係可沿X及Y軸來相對於枱座16移動。應請暸解該印頭18 亦可沿X和Y軸移動,如同其在Z軸移動;且移動枱2〇亦可 沿Z軸移動,如同其在X和γ軸移動。有一移動枱裝置之例 15係被揭於2002年7月11曰申請之No· 10/194414美國專利申 請案中,其名稱為“逐步重複的壓印微影法”,亦被讓渡給 本發明的受讓人’其内容併此附送。一輻射源22會被連結 於該光微影系統10上,而可將光化性輻射投射於該活動枱 20上。如所示,該輻射源22係連結於橋架14並包含一電源 20產生器23連接於該輻射源22。該微影系統10的操作典型係 由一資料導通的處理器25來控制。 請參閱第 ,該木 板26上設有〆模件28。該模件28包含多數的特徵細構係^ 多數間隔分開的凹部28a和凸部28b所形成。該等細構會 1250560 成一原始圖案,其會被移轉至一被置於活動枱2〇上的基材 30中。其中,該印頭18及/或活動枱20可改變模件28和基材 30之間的距離“d”。以此方式,在模件28上的細構將可被壓 印於基材之一可流動區域中,如後所詳述。該輻射源22係 5 被設成令模件28位於輻射源22和基材30之間。因此,製成 s亥极件28的材料應能充分地透射該輕射源22所產生的幸畐 射0 請參閱第2及3圖,一可流動區域例如一壓印層34會被 設在一表面32的一部份上,該表面32係呈平坦的廓形。該 10 可流動區係可使用任何習知的技術來形成,例如第 5,772,905號美國專利中所揭的熱壓花法(其内容併此附 送),或由 Chou 等人在 “Ultrafast and Direct Imprint of Nanostructures in Silicon,,Nature,Col. 417,ρρ·835〜837, June 2002中所揭的該種雷射輔助直接壓印(LADI)法。又, 15 該可流動區亦可包含一黏性流體的旋塗膜,其可被成型並 固化來形成一固體複製物。但在本實施例中,該壓印層34 構成的可流動區域係在基材30上沉積許多間隔分開的個別 材料滴36所形成’此將詳細說明於後。一用來沉積該等材 料滴36的系統之例曾被揭於2〇〇2年7月9日申請之No· 20 l〇/191749美國專利申請案中,其名稱為“用來配佈液體的系 統和方法”,亦被讓渡給本發明的受讓人,且其内容併此附 送。壓印層34係由材料36a所製成,其可被選擇地聚合化並 交鏈來在其中記錄原始圖案,而形成一複製圖案。該材料 36a之一成分例係被揭於2〇〇3年6月16日申請之No. 1250560 10/463396美國專利申請案中,其名稱為“用來減少—可順形 區與-核件圖案間之黏附的方法”,此内容亦併此附送。該 材料3如如帛4圖所示會在各點她處交键結合,而形成一交 鍵聚合材料36c。 5 p清茶閱第2、3、5圖,被記錄在麼印層34中的圖案有部 份係藉該模件28的機械接觸而來形成。其中,該距離“d,,會 被減J以使液滴36能與模件28接觸,致令該等液滴%擴散 延展開來而在該表面32上以連續的材料36a形成壓印層 34。在一實施例中,該距離“d”會被縮減而使該壓印層34的 1〇次部份34a等擠入凹部28a中並將之填滿。 為便於填滿該等凹部28a,故材料36a會具有所需的特 性俾完全填滿凹部28a,並以連續形成的材料36&來覆蓋該 表面32。在本實施例中,該壓印層34的次部份341^等係可在 達到所需的(通常為最小的)距離“d”之後保持與各凸部28b 15重疊,而令次部份34a具有一厚度t,,且次部份341)具有一厚 度t2。該厚度“t Γ,與“V,乃可視其用途而為任何所需的厚产。 通常,^會被選成不大於次部份34a之寬度u的兩倍,即 ti$2u,此乃詳示於第5圖中。 請參閱第2、3、4圖,在達到一所需距離“d,,之後,該 20韓射源22會產生光化性幸昌射,其可聚合化及交鏈該㈣二 來形成交鏈聚合材料36c。結果,該壓印層34的成分合由材 料36c轉變成交鏈的聚合材料3仏,其係為固體。具士之, "亥父鏈聚合材料36c會被固化而使該壓印層34的一面具 有一形狀順應於該模件28之表面28c的形狀,如第5圖所 1250560 示。在該壓印層34被轉變成如第4圖所示的交鏈聚合材料 36c之後,科㈣如第所㈣被軸來增大該距離 “d”’而使該模件28與在壓印層34間隔分開。 請參閱第5圖’附加的處理步驟亦可被用來完成該基材 3〇的圖案化。例如卩層34和基㈣可祕刻來將壓 印層34的圖轉轉於該基材财,而形成—圖案化表面 士第6圖所π。為便於姓刻,該壓印層%的材料乃可 依需要而改變,以使其能與該基材3()形成—相雜刻率。 該壓印層34與基材3〇的相對敍刻率可在約m職】之 可另擇或附加地,該壓印層34亦得與被選擇性沉積其 上的光阻材料(未示出)賦具__率差。該光阻材料(未矛 出Μ系可被設來使用習知的技術進一步地圖案化該壓印層 34。任何_法皆可使用,乃取決於所需的_速率以及 15構成基材3〇和壓印層34的成分。蝕刻方法之例可包括電漿 蝕刻,反應離子蝕刻,化學濕蝕刻等等。 Κ 請參閱第7及8圖,其上設有模物賴板%會經由— 吸盤系統40來連結於一印頭殼18a,該系統4〇包含一吸盤本 >體42。該本體42可利用真空技術來吸持其上附設有模仙 〇的杈板26。其中,該本體42含有一或多數凹槽42a等會導通 一壓力控制系統,例如一流體供應系統7〇。該流體供應系 統70可包含一或多個泵來提供正應力及負壓力,並能供應 流體來消減或防止氣體(例如空氣)滞陷於第5圖所示的壓印 層34中。一吸盤系統之例曾被揭於Ν〇· 1〇/293224美國專利 !250560 申請案中,其名稱為“可調制基材形狀的吸盤系統”,亦被 讓渡於本發明的受讓人,其内容併此附送。 如上所述,當壓印模板26與模件28被帶至靠近該壓印 材料36a尚未圖案化的基材30時,會被置於一區域77上。具 5言之,該模板26會被帶至該基材30的數十微米内,例如15 微米左右。已發現最好能對靠近該模板26與該區域之氛圍 78進行局部控制。例如,為避免氣體的有毒作用,及/或存 在於壓印材料36a中的氣袋,及/或後續滯陷於圖案化之壓印 層34中的氣袋,已發現若能加以控制該氛圍78中的流體成 10分,及/或該氛圍78的壓力乃是有所助益的。 請參閱第9圖,為便於控制該氛圍78,該吸盤本體42 會被設計成使該模件28附近的流體能容易通過,且該印頭 18含有一隔板1〇〇可包圍該模板26。具言之,該隔板1〇〇會 由印頭18伸出,而終結於一底緣1〇2其係位於該模板表面 15 2仏所在之一平面中。於此構態中,模件28會延伸超出底緣 102以便接觸該區域77。該吸盤本體42包含一或多個貫孔, 其中兩個係被示為104和106。該等貫孔1〇4和1〇6的孔口 104a和106a係位於該模板26和隔板1〇〇間之吸盤本體42的 表面上’遺表面係稱為邊緣表面1 〇〇a。該等貫孔1 和1 〇6 20會使孔口 104a和106a導通流體供應系統70。該隔板100能使 離開孔口 104a和l06a的流體較緩慢地移動離開該模件28。 其中,該隔板100包含二相反的第一和第二表面1〇2&與 102b。该第一表面l〇2a會由底緣102延伸遠離該基材3〇而面 向該模板26。第二表面⑺沘由底緣102延伸遠離該基材川而 12 1250560 背對該模件28。雖非一定必要,但所示之第一表面102a係 相對於第二表面102b呈斜向地延伸。以此結構,該氛圍78 將可藉從孔口 104a及106a等注入或抽出流體而來控制。但 是,該第一和第二表面102a與102b亦可由底緣102互相平行 5 地延伸。 請參閱第3及9圖,在一實施例中,該氛圍78會被構建 成令通過該區域77内之壓印材料36來遷移其中的氣體會比 隨著空氣來遷移者更多。此所謂“遷移”係指任何機制而可 使氣體通過壓印層36a的傳送率增加者,例如更高的溶解 10 度、更高的擴散率、更高的滲透率等等。其中,流體供應 系統70可包括能供應呈蒸汽狀的壓印材料36a或其成分 者。該處理器25會與流體供應系統70導通,故在其控制下, 壓印材料36a可由孔口 104a和106a注入而使該大氣78氛圍 中充滿該壓印材料36a。此已被發現可以減少或完全消除在 15 壓印過程中滯陷於壓印層34内的氣體,例如空氣。這是較 有利的,因已發現空氣存在於壓印層34中會造成不良的空 隙。或者,亦已發現若以二氧化碳及/或氦來充滿該氛圍 78,則滯陷於第5圖所示之壓印層34中的空氣量將可大為減 少或消失,故能減少或避免其中生成不良的氣隙。又,已 20 發現藉著利用如上所述的氛圍78,則不僅不良氣隙的數目 可以減少或消除,且達到一可接受之最小程度的圖案瑕疵 所需的時間將能大為縮短。應請瞭解針對第3圖所示之壓印 材料36a的混合物,二氧化碳及/或氦乃可被注入該氛圍78 中,如第9圖所示,而來減少滯陷於第5圖所示之壓印層34 13 !25〇56〇 内的空氣量。 請參閱第9及10圖,針對欲注入流體之一所遭遇的困難 係需確保離開孔口 104a和l〇6a之流體l〇4b與l〇6b的分子。 要能在料滴36與模件28接觸之前移至該模件28與料滴36之 5間的氛圍區域中。該氛圍几區域係被稱為處理區域78a。如 圖所示,孔口 104a和l〇6a係繞邊緣表面100a來佈設,而與 處理區域78a間隔分開。若該模件28與待印區域77分隔以微 米計,則上述分子將難以進入該處理區域78a中。 一種用來克服上述困難的方法係使該流體供應系統7〇 1〇在處理器25的控制下以適當的控制軟體(未示出)來程式 化,而將具有上述所需分子混合物的流體1〇41)和1〇61)脈衝 喷入該大氣78氛圍中。以此方式,將可避免該等流體1〇仆 和106b的層流。相信藉著提供具有亂流的流體1〇牝和1〇61) 喷流,則能有足夠量的分子達到該處理區域78a來減少或消 15除被滯陷於壓印層34中之氣體的可能性將會增加。就此, 其流體係可被同時地壓出該二孔口 l〇4a和l〇6a,或者依序 地來出’即首先流體會由孔口 1 〇4a注入,然後經由孔口 106a注入,嗣再由孔口 l〇4a注入…,而令此過程重複進行 一段時間,或歷經整個壓印製程。又且,該氣流進入處理 20 區域78a的時點十分重要,因為最好能有足夠量的分子在該 模件28和料滴36接觸之前先達到該處理區域。 或者’該流體亦可經由一孔口例如1 〇4a來被喷送,然 後再由另一孔口即106a來被抽出。以此方式,則該流體將 可被抽吸橫越處理區域78a。其亦可以進一步地同時先將流 14 1250560 體送入兩個孔口 l〇4a與106a,然後又同時地由該二孔口來 抽出。但是,最好該流體的流率係被設為能儘量減少或不 會移動該等料滴36。 為確使離開孔口 l〇4a與106a的流體能橫越處理區域 5 78a,則最好是先同時地經由二孔口 l〇4a與106a來喷送流 體,然後輪流由一孔口 或106a來抽氣。由二孔口 104a 和106a同時地注入流體將可儘量減少充滿該氛圍78所需的 時間。而由其一孔口 l〇4a或106a來輪流地抽出流體將能確 使該流體移經處理區域78a。例如,一第一步驟會包括由二 10 孔口 104a和1 〇6a來將流體注入該氣圍78中。而"第二步驟 係由該等孔口 l〇4a和106a中之一者,例如孔口 l〇4a來抽出 該流體。然後,在第三步驟時,該流體又會同時由二孔口 104a和106a注入該氛圍78中。嗣在第四步驟時,該流體將 會由一先前未用來抽出流體的孔口(例如l〇6a)被抽出。應可 15 瞭解該抽氣亦能由其中之一孔口 104a或106a來進行,而由 另一孔口 106a或104a來注入流體。或者,亦可在當沒有流 體流入該氛圍78中時來進行抽氣。最好的結果是令流體能 進入該氛圍78中,且流體會由其中被抽出,而使該流體呈 現所需的濃度。 20 在另一實施例中,有多數的孔口會環繞該邊緣表面 104a來佈設,而使每一對孔口互相對設在模板26的相反側 上。圖中示出該對孔口 104a和106a係對設在模板26的相反 側上。另有一第二對的孔口係被示為l〇8a和ll〇a。該二孔 口 108a和110a亦互相對設在模板26的相反側上。 15 1250560 如所示,該各孔隙l〇4a、106a、108a、110a等係被排 列置設在一共同圓圈上,而相鄰的孔口會間隔90°。以此方 式,該各孔口 l〇4a、106a、108a、110a將被設成能使流體 便於流入/出該吸盤本體42之四個不同的象限。具言之’孔 5 口 l〇4a可使流體易於流入/出象限I,孔口 106a可使流體易 於流入/出象限Π ;孔口 1 〇8a可使流體易於流入/出象限ΠΙ ; 孔口 110a可使流體易於流入/出象限IV。但是,任何數目的 孔口皆可被使用,例如每一象限可有一個以上的孔口,而 不同的象限具有不同數目的孔口,且排列成任何所需的空 10間形態。其各排列方式應要可使該各流體流能容易注入及/ 或排出該氛圍78,且令一部份的流體能被注入圍繞該模板 26的不同區域中。相信注入該等多數的流體噴流將可在該 氛圍78中形成一流體的亂流。故相信此將能增加該流體中 的分子達到如第9圖所示之處理區域78a的機會。但是,令 15 流體由該各孔口 104a、106a、l〇8a、110a流入該氛圍78中, 及由該氛圍78中抽出該流體,係得以上述之任何方式來進 行。 請參閱第9、10、11圖,在另一實施例中,一流體流可 依序地經由各孔口 l〇4a、l〇6a、l〇8a、110來被注入,因此 20 在該模板26與待印區域77之間將會形成一流穴112。該流穴 112可促進流體中的分子進入處理區78a中,而來提供上述 的效益。例如,首先有一流體流可由孔口 10如注入,然後 中止。在該孔口 l〇4a的流體流中止之後,經由孔口 l〇6a的 流體流即會開始注入該氛圍78中。然後,經由孔口 106a的 16 1250560 流體流將會中止。在該孔口106a的流體流中止後’經由孔 口 108a的流體流即會開始注入該氛圍78中。然後經由孔口 108a的流體流將會中止。在經由孔口 10如的流體流中止之 後,經由孔口 ll〇a的流體流即會開始注入該氛圍78中。以 5此方式,流體將會在任何指定時間經由單一象限來注入於 該氛圍78中。但是,其亦得以同時將流體注入於一個以上 的象限中。雖此可能有礙該流穴112的形成’惟仍在本發明 的範圍内。 或者,亦可依序地經由各孔口 l〇4a、106a、108a、ll〇a 10 來注入及抽出流體以造成該流穴112。此乃包括經由一或多 個該等孔口來同時地注入流體。然後’依序地經由該各孔 口 104a、1 〇6a、1 〇8a、11 來抽氣以造成流穴112。例如’ 該流體可同時地經由該吸盤本體42中的所有孔口來注入。 然後,該流體玎逐一地經由各孔口 104a、106a、108a、110a 15來依序地被抽出。因此,經由孔口 l〇4a〜110a來注入於該氛 圍78中的流體濃度將會由於抽氣而降低至一所需程度。該 流體嗣又可再經由一或所有的孔口 l〇4a〜110a來注入,且該 程序會重複進行而來造成及/或保持該流穴112。 如上所述之本發明的各實施例僅為舉例。針對上述揭 2〇露的許多修正變化仍可被製成而不超出本發明的範圍。因 此,本發明的範圍將不受上述說明所限制,而是應參照所 附申請專利範園及其專效範圍而來決定。 【圖式簡革說明】 第1圖為本發明之一微影壓印層34系統的立體圖; 17 1250560 第2圖為第1圖所示之微影系統的簡化平面圖; 第3圖為一用來製造第2圖之壓印層的材料在被聚合化 及交鏈之前的簡化示意圖; 第4圖為第3圖所示的材料在被照射輻射之後轉變成交 5 鏈聚合材料的簡化示意圖; 第5圖為第1圖所示的模件在圖案化該壓印層之後與該 壓印層間隔分開的簡化平面圖; 第6圖為第5圖所示的基材在第一壓印層的圖案移轉於 其上之後,有一添加的壓印層佈設於該基材頂上的簡化平 10 面圖; 第7圖為第1圖所示之印頭的立體圖; 第8圖為本發明之一吸盤系統的截面圖; 第9圖為第7圖所示之印頭的截面圖;及 第10圖為第9圖所示之印頭的底視立體圖。 15 【主要元件符號說明】 10···光微影系統 26…模板 12···橋座 28…模件 14…橋架 28a···凹部 16···枱座 28b···凸部 18…印頭 30…基材 20…移動枱 32…表面 22…輻射源 34···壓印層 23…電源產生器 34a、b···次部份 25…處理器 36···材料滴 18 1250560 36a…材料 78a…處理區域 36b···交鏈點 100···隔板 36c···聚合材料 100a…邊緣表面 40…吸盤系統 102…底緣 42…吸盤本體 102a…第一表面 42a···凹槽 102b…第二表面 70…流體供應系統 104、106···貫孔 77…待印區域 104a、106a、108a、110a···孔口 78…氛圍 112···流穴 19
Claims (1)
1250560 十、申請專利範圍: L 一種用來減少沉積在一基材上的黏性液體層内之氣體 的方法,包含: 改、交罪近於該黏性液體的氣體成分來促進在該黏 5 性液體内之氣體的遷移。 2·如申請專利範圍第!項之方法,其中該改變更包括提高 對該黏性液體内之氣體的可溶解度。 3’如申凊專利範圍第1項之方法,其中該改變更包括提高 在該黏性液體内之氣體的可擴散性。 1〇 4.如申請專利範圍第1項之方法,其中該改變更包括提高 在該黏性液體内之氣體的可滲透性。 5·如申請專利範圍第1項之方法,其中該改變更包括注入 一流體來控制靠近該基材的氛圍以浸滲該黏性液體。 6.如申請專利範圍第丨項之方法,更包括減低靠近該基材 15 之氛圍的壓力。 入如申請專利範圍第1項之方法,其中該改變更包括藉注 入一流體來控制靠近該基材的氛圍,以增加該黏性液體 内之氣體的遷移。 8·如申請專利範圍第6項之方法,其中該注入更包括注入 20 選自二氧化碳或氦的流體。 9· 一種將流體注入於設在一模板上的模件與一基材之間 的方法,包含: 注入一流體流靠近於該模板而在該基材與模板之間 造成一流體亂流,以使部分流體移經該模件與基材之間。 20 !25〇56〇 1〇.如申請專利範圍第9項之方法,其中該注入更包括將該 流體流脈衝喷入—鄰接該模板且重疊該基材的區域中。 U.=請專利範圍第9項之方法,其中該注入更包括脈喷 5 m而該脈噴更包括將該流體經由環繞該模板周 5 緣之不同位置的多數區域來依序地喷注,而在-位於該 模件與基材之間的氛圍中造成一流穴。 12·-種絲將-流體流注入一設在一模板上的模件與一 基材之間的系統,包含: 一流體供應系統;及 及盤本體具有一隔板及第一和第二孔口,該等孔 口係δ又在该吸盤本體之一表面上而介於隔板與模板之 間,並會導通該流體供應系統,而在該模件與基材之間 造成一流體亂流。 13·如申請專利範圍第12項之系統,其中該吸盤本體更包含 15 夕數的孔口没在該吸盤本體的表面上而介於該隔板與 模板之間。 14.如申睛專利範圍第丨2項之系統,其中該吸盤本體更包含 夕數的孔口設在該吸盤本體的表面上而介於該隔板與 模板之間,且該等孔口包含一對孔口相對列設。 20 15.如申請專利範圍第12項之系統,其中該吸盤本體更包含 多數的孔口設在該吸盤本體的表面上而介於該隔板與 模板之間,且該等孔口係被置設在一具有多數象限的共 同圓圈中,其中有一象限包含一組孔口,而不同的象限 包含不同組的孔口。 21
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US8400379B2 (en) | 2000-04-18 | 2013-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI393627B (zh) * | 2008-12-04 | 2013-04-21 | Asml Netherlands Bv | 壓印微影裝置及方法 |
TWI494209B (zh) * | 2008-12-04 | 2015-08-01 | Asml Netherlands Bv | 壓印微影裝置及方法 |
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KR20060096424A (ko) | 2006-09-11 |
EP1667778A2 (en) | 2006-06-14 |
MY135469A (en) | 2008-04-30 |
US7270533B2 (en) | 2007-09-18 |
JP5275399B2 (ja) | 2013-08-28 |
WO2005033797A2 (en) | 2005-04-14 |
US20050072757A1 (en) | 2005-04-07 |
JP2010192912A (ja) | 2010-09-02 |
US7531025B2 (en) | 2009-05-12 |
EP1667778B1 (en) | 2012-12-26 |
TW200518188A (en) | 2005-06-01 |
CN1859959A (zh) | 2006-11-08 |
JP4536157B1 (ja) | 2010-09-01 |
JP2011193005A (ja) | 2011-09-29 |
US7090716B2 (en) | 2006-08-15 |
KR101178432B1 (ko) | 2012-08-31 |
KR20120052426A (ko) | 2012-05-23 |
EP1667778A4 (en) | 2009-04-22 |
SG128681A1 (en) | 2007-01-30 |
JP2010192911A (ja) | 2010-09-02 |
WO2005033797A3 (en) | 2005-10-06 |
KR20110120972A (ko) | 2011-11-04 |
JP2007509769A (ja) | 2007-04-19 |
CN100482307C (zh) | 2009-04-29 |
KR101241076B1 (ko) | 2013-03-11 |
US20050074512A1 (en) | 2005-04-07 |
US20050072755A1 (en) | 2005-04-07 |
JP4658227B2 (ja) | 2011-03-23 |
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