CN101405087A - 光刻印刷系统 - Google Patents

光刻印刷系统 Download PDF

Info

Publication number
CN101405087A
CN101405087A CNA2007800099833A CN200780009983A CN101405087A CN 101405087 A CN101405087 A CN 101405087A CN A2007800099833 A CNA2007800099833 A CN A2007800099833A CN 200780009983 A CN200780009983 A CN 200780009983A CN 101405087 A CN101405087 A CN 101405087A
Authority
CN
China
Prior art keywords
template
base material
away
gas
print mould
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800099833A
Other languages
English (en)
Inventor
A·切罗拉
P·B·拉德
I·M·麦克麦基
B·-J·乔伊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Nanotechnologies Inc
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Publication of CN101405087A publication Critical patent/CN101405087A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5833—Measuring, controlling or regulating movement of moulds or mould parts, e.g. opening or closing, actuating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

本发明涉及一种通过使用固定纳米印刷模具的模板中的凹槽或孔产生部分真空，在纳米印刷光刻模板附近产生和保持所需环境的方法和系统。

Description

光刻印刷系统
本发明涉及纳米光刻印刷系统。
纳米制造包括制造极小的结构，例如具有纳米级或更小的特征(feature)的结构。纳米制造具有显著影响的一个领域是集成电路的制造。随着半导体加工工业持续地力求获得更高的生产率，同时增加每单位面积基片上形成的电路数量，纳米制造变得越来越重要。纳米制造提供了更高的工艺控制，同时允许更大程度地减小形成的结构的最小特征尺寸。已经应用纳米制造的其它研发领域包括生物技术、光学技术、机械系统等。
一种示例性的纳米制造技术通常被称为印刷光刻。示例性的印刷光刻法在许多公开出版物中进行了详细描述，例如参见美国专利申请公开第2004/0065976，其提交时的美国专利申请号为10/264,960，标题为″在基材上设置特征、从而复制具有极小的尺寸变化的特征的方法和模具(Method anda Mold to  Arrange Features  on a Substrate  to  Replicate Features havingMinimal Dimensional Variability)″；美国专利申请公开第2004/0065252号，其申请时为美国专利申请第10/264,926号，题为″在基材上形成层以促进度量标准制造的方法(Method of Forming a Layer on a Substrate to FacilitateFabrication of Metrology Standards)″；以及美国专利第6,936,194号，题为″用于印刷光刻法的功能图案化材料(Functional Patterning Material forImprint Lithography Processes)″，所有这些专利申请都转让给本发明的受让人，所有这些专利都参考结合入本文中。
上述这些美国专利申请公开和美国专利中所述的基本印刷光刻技术都包括了在可聚合的层中形成浮雕图案，将与所述浮雕图案对应的图案转移到下面的基材中。所述基材可以置于移动的台上，到达所需的位置，以促进其图案化。使用与所述基材隔开的模板，在模板和基材之间存在可成形的液体。所述液体固化形成其中记录有图案的固化的层，所述图案与与所述液体接触的模板表面的形状一致。然后将所述模板与固化的层相分离，使得模板和基材隔开。然后对基材和固化的层进行加工，将对应于所述固化的层中的图案的浮雕图案转移到所述基材中。
人们需要能够使得印刷光刻更高效更吸引人的系统。
通过本发明的主权项的系统完成了这个目标。通过在纳米光刻印刷过程中，在模板和基材之间产生特定的环境，提高了印刷光刻的效率，更具体来说是通过部分真空环境印刷提高了印刷光刻的效率。
本发明优选的实施方式的特征在从属权项中进行描述。
下面结合附图描述本发明的优选实施方式，在附图中：
图1是具有与基材隔开的模板的光刻系统的简化侧视图；
图2显示了模板上的部分真空环境：a)具有孔的模板的侧视图；b)具有多个孔的模板a)的俯视图；c)具有沟槽的模板的侧视图；d)模板c)的俯视图；
图3显示了另外的附加的板(add-on plate)；
图4显示了使用上升空气垫在模板周围用作为半密封的部分真空环境；
图5显示了本发明的另一实施方式。
参见图1，用来在基材12上形成浮雕图案的系统8包括平台10，该平台10将基材12支承在其上，还包括模板14，该模板14上具有图案化表面18。在另一个实施方式中，基材12可以与基材卡盘(未显示)连接，所述基材卡盘(未显示)是任意的卡盘，包括但不限于真空卡盘和电磁卡盘。
模板14和/或模具16可以由以下的材料形成，包括但不限于：热解法二氧化硅、石英、硅、有机聚合物、硅氧烷聚合物、硼硅酸盐玻璃、氟碳聚合物、金属和硬化蓝宝石。如图所示，图案化表面18包括通过多个间隔的凹陷17和凸起19构成的特征。但是，在另一个实施方式中，图案化表面18可以基本上是平滑和/或平坦的。图案化表面18可以限定初始图案，该初始图案形成用来形成于基材12上的图案的基础。
模板14可以与印刷头20连接，用来促进模板14的移动，从而促进模具16的移动。在另一个实施方式中，模板14可以与模板卡盘(未显示)连接，所述模板卡盘(未显示)是任意的卡盘，包括但不限于真空卡盘和电磁卡盘。连接流体分配系统22，选择性地设置为与基材12流体连通，用来将聚合材料24沉积在基材12之上。应当理解，可以使用任意已知的技术沉积聚合材料24，这些技术包括例如：液滴分配，旋涂，浸涂，化学气相沉积(CVD)，物理气相沉积(PVD)等。另外，如下所述，在模具16和基材12之间建立环境之前，可以将聚合材料24设置在基材12之上，或者在另一个实施方式中，可以将流体分配系统22置于基材12和模板14之间。
能量28的源头26沿路径30与直接能源28相连。印刷头20和平台10的构型设计分别用来将模具16和基材12叠加设置在路径30中。印刷头20、平台10或者这两者在模具16和基材12之间的距离发生变化，用来在其之间限定所需的体积，该体积将被聚合材料24填充。
参见图1，在模具16和基材12之间限定所需的体积之前，将聚合材料24设置在基材22之上。但是，可以在已经得到所需的体积之后，用聚合物材料24填充所述体积。在所需体积被聚合物材料24填充之后，源头26产生能量28，例如宽带能，使得聚合材料24固化和/或交联，与基材12的表面25的形状相一致，并使表面18图案化，在基材12上形成图案化的层50。
所述宽带能量可包括光化成分，包括但不限于紫外波长、热能、电磁能、可见光等。所述采用的光化成分是本领域技术人员已知的，通常取决于用来形成印刷层12的材料。通过处理器32调控该过程，所述处理器32与平台10、印刷头20、流体分配系统22和源头26数据连通，通过存储在存储器34内的计算机可读程序进行操作。
以下三种能力被认为是有助于使得印刷光刻更高效，更吸引人：
1.产生和保持纯氦或其它操作气氛，例如CO2；
2.部分或完全真空印刷(缩短填充时间，减少缺陷和氧中毒)；
3.减小或消除分离作用力。
通过室的理念(chamber concept)在模板附近产生和保持压力，在模板的活性区域附近产生了防漏的体积，然后可以通过使用气体加压或抽气。由于模板的几何结构，当模板与晶片接触的时候，活性区域周围的蚀刻的背面区域(back region)能够很方便地提供这样的体积。因为蚀刻的背面区域比活性区域高出约5-15微米，其还能提供对任意气体/流体极高的流阻。
图2a)-d)显示了使用具有用于气体流动的凹槽213或孔204的模板203-211的部分真空环境。需要具有多个流动的源(例如孔204)或环绕的槽213，以便在模板205、214的活性区域202-212下方产生均匀的部分真空。通过所述开口204、216的真空流将已有的空气或气体抽走，而在由小而长的间隙造成的显著压降的存在下，会降低活性区域202、212和基材201、210之间的压力。美国专利申请公开第2005/0072755号，提交时的美国专利申请号为10/677,639，题为″单相流体印刷光刻法(Single Phase FluidImprint Lithography Method)″，描述了一种在模板203、211和基材201、210之间引入流体的方法，该专利参考结合入本文中。
参见图3，当模板302无法进行钻孔或加工形成槽的时候，可以在模板302的外部添加另外的板块304，使在该添加的板块304和模板302之间的小间隙305能够产生活性区域306和基材301之间必需的气体压降。为了将小间隙保持在5-50微米范围内，添加的延伸部分可具有空气垫，空气垫与匹配表面面接。
图4显示了用来在基材402和模板403之间产生分压的分压印刷装置的横截面图。真空预先加载的空气垫410能够基本密封该小环境405，所述小环境405可以用合适的操作气体(例如He)填充，代替空气。所述空气垫界面410位于与板块406相邻的位置。槽(未显示)会导致从环境405抽气408，同时加压的气体407通过空气垫环410被引入，达到空气垫参比表面406和相应的模板平台404的平衡。一旦完成了对晶片的印刷，可以降低向上的空气垫，以提供晶片I/O末端效应器(end-effecter)的途径。
图5显示了一种实施方式，其中使用喷嘴系统在模板502和基材501之间产生部分He环境。
上述本发明的实施方式是示例性的。可以在不背离本发明范围的前提下对上述内容进行许多的变化和改良。因此，本发明的范围不限于上述内容，应当由所附权利要求书及其全部等价内容来决定。

Claims (5)

1.一种用来在纳米光刻印刷过程中，在模板和基材之间产生特定环境的系统，该系统包括：
基材；
模板，所述模板设置在与所述基材紧密相邻的位置，在所述模板上的纳米印刷模具与基材上的相应位置之间产生空间体积；
一种装置，用来部分抽走在所述纳米印刷模具和基材之间的空间体积内的气体。
2.如权利要求1所述的系统，其特征在于，所述模板还包括多个孔，这些孔位于所述纳米印刷模具周围，穿通所述模板，所述用来部分抽走气体的装置使用所述多个孔，部分抽走在所述纳米印刷模具和基材之间的空间体积内的气体。
3.如权利要求1所述的系统，其特征在于，所述模板还包括形成于模板之内、围绕所述纳米印刷模具的槽，所述槽与所述用来部分抽走气体的装置相连。
4.如权利要求1所述的系统，其特征在于，所述用来部分抽走气体的装置还包括位于所述模板周围的主体，所述主体的构型能够在所述模板侧面和所述主体侧面之间产生间隙，使向上流过所述间隙的空气将所述模板和基材之间的气体抽走。
5.如权利要求1所述的系统，所述系统还包括分配在所述纳米印刷模具和所述基材之间的可聚合流体。
CNA2007800099833A 2006-04-03 2007-04-02 光刻印刷系统 Pending CN101405087A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78877906P 2006-04-03 2006-04-03
US60/788,779 2006-04-03

Publications (1)

Publication Number Publication Date
CN101405087A true CN101405087A (zh) 2009-04-08

Family

ID=38625508

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800099833A Pending CN101405087A (zh) 2006-04-03 2007-04-02 光刻印刷系统

Country Status (8)

Country Link
US (1) US7462028B2 (zh)
EP (1) EP2001602B1 (zh)
JP (2) JP4536148B2 (zh)
KR (1) KR20080114681A (zh)
CN (1) CN101405087A (zh)
AT (1) ATE513625T1 (zh)
TW (1) TWI432311B (zh)
WO (1) WO2007123805A2 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012083578A1 (zh) * 2010-12-22 2012-06-28 青岛理工大学 整片晶圆纳米压印的装置和方法.
CN104684710A (zh) * 2012-06-19 2015-06-03 希捷科技有限公司 纳米级空隙的减小
CN107364057A (zh) * 2017-07-10 2017-11-21 天津工业大学 一种不同粗糙度模板的制备方法
CN107430329A (zh) * 2015-02-13 2017-12-01 莫福托尼克斯控股有限公司 纹理化分立基板的方法ii
CN118444526A (zh) * 2024-07-05 2024-08-06 苏州新维度微纳科技有限公司 纳米压印模具及纳米压印的方法

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6119463A (en) 1998-05-12 2000-09-19 Amerigon Thermoelectric heat exchanger
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20060062922A1 (en) 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7587901B2 (en) 2004-12-20 2009-09-15 Amerigon Incorporated Control system for thermal module in vehicle
US7611348B2 (en) * 2005-04-19 2009-11-03 Asml Netherlands B.V. Imprint lithography
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
MY144847A (en) 2005-12-08 2011-11-30 Molecular Imprints Inc Method and system for double-sided patterning of substrates
EP1984208B1 (en) 2006-01-30 2012-02-29 Amerigon, Inc. Cooling system for container in a vehicle
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US8539624B2 (en) 2006-05-31 2013-09-24 Gentherm Incorporated Structure based fluid distribution system
US20080087316A1 (en) 2006-10-12 2008-04-17 Masa Inaba Thermoelectric device with internal sensor
EP2606771B1 (en) 2006-10-13 2015-01-07 Gentherm Incorporated air conditioned bed
US20080303187A1 (en) * 2006-12-29 2008-12-11 Molecular Imprints, Inc. Imprint Fluid Control
KR101319325B1 (ko) * 2006-12-29 2013-10-16 엘지디스플레이 주식회사 패턴의 형성 방법
CN101611503B (zh) 2007-01-10 2012-12-26 阿美里根公司 热电装置
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US9105809B2 (en) 2007-07-23 2015-08-11 Gentherm Incorporated Segmented thermoelectric device
US7877827B2 (en) 2007-09-10 2011-02-01 Amerigon Incorporated Operational control schemes for ventilated seat or bed assemblies
US9125497B2 (en) 2007-10-15 2015-09-08 Gentherm Incorporated Climate controlled bed assembly with intermediate layer
US8119052B2 (en) * 2007-11-02 2012-02-21 Molecular Imprints, Inc. Drop pattern generation for imprint lithography
JP4840668B2 (ja) * 2007-11-30 2011-12-21 綜研化学株式会社 熱インプリント用モールドおよびこのモールドを用いた光学素子の製造方法
US20090148619A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Controlling Thickness of Residual Layer
US20090196826A1 (en) * 2007-12-18 2009-08-06 Board Of Regents, The University Of Texas System Compositions and methods of making non-spherical micro- and nano-particles
KR101779870B1 (ko) 2008-02-01 2017-10-10 젠썸 인코포레이티드 열전 소자용 응결 센서 및 습도 센서
US8361371B2 (en) * 2008-02-08 2013-01-29 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
JP5121549B2 (ja) * 2008-04-21 2013-01-16 株式会社東芝 ナノインプリント方法
US20100015270A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
CN104523071A (zh) 2008-07-18 2015-04-22 金瑟姆股份公司 气候受控床组件
US20100096764A1 (en) * 2008-10-20 2010-04-22 Molecular Imprints, Inc. Gas Environment for Imprint Lithography
US8512797B2 (en) * 2008-10-21 2013-08-20 Molecular Imprints, Inc. Drop pattern generation with edge weighting
US8586126B2 (en) 2008-10-21 2013-11-19 Molecular Imprints, Inc. Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement
TWI414418B (zh) * 2008-10-23 2013-11-11 Molecular Imprints Inc 壓印微影術系統及方法
US20100112220A1 (en) * 2008-11-03 2010-05-06 Molecular Imprints, Inc. Dispense system set-up and characterization
WO2010088405A1 (en) 2009-01-28 2010-08-05 Amerigon Incorporated Convective heater
SG174889A1 (en) 2009-03-23 2011-11-28 Intevac Inc A process for optimization of island to trench ratio in patterned media
US8893329B2 (en) 2009-05-06 2014-11-25 Gentherm Incorporated Control schemes and features for climate-controlled beds
JP5349595B2 (ja) * 2009-07-09 2013-11-20 インハ インダストリー パートナーシップ インスティテュート マイクロレンズアレイの製造装置及びマイクロレンズアレイの製造方法
EP2287666B1 (de) 2009-08-22 2012-06-27 EV Group E. Thallner GmbH Vorrichtung zum Prägen von Substraten
US8332975B2 (en) 2009-08-31 2012-12-18 Gentherm Incorporated Climate-controlled topper member for medical beds
JP5419634B2 (ja) * 2009-10-26 2014-02-19 株式会社東芝 パターン形成方法
US20110140304A1 (en) * 2009-12-10 2011-06-16 Molecular Imprints, Inc. Imprint lithography template
EP2534536A2 (en) * 2010-02-09 2012-12-19 Molecular Imprints, Inc. Process gas confinement for nanoimprint lithography
JP5491931B2 (ja) * 2010-03-30 2014-05-14 富士フイルム株式会社 ナノインプリント方法およびモールド製造方法
JP5822597B2 (ja) * 2010-10-01 2015-11-24 キヤノン株式会社 インプリント装置、及びそれを用いた物品の製造方法
JP5930622B2 (ja) 2010-10-08 2016-06-08 キヤノン株式会社 インプリント装置、及び、物品の製造方法
US9121414B2 (en) 2010-11-05 2015-09-01 Gentherm Incorporated Low-profile blowers and methods
JP5787691B2 (ja) * 2011-09-21 2015-09-30 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
US9685599B2 (en) 2011-10-07 2017-06-20 Gentherm Incorporated Method and system for controlling an operation of a thermoelectric device
US9989267B2 (en) 2012-02-10 2018-06-05 Gentherm Incorporated Moisture abatement in heating operation of climate controlled systems
KR101515180B1 (ko) * 2012-05-18 2015-04-24 주식회사 휴템 유체압을 이용한 기판접합 장치 및 기판접합 방법
WO2014008423A2 (en) 2012-07-06 2014-01-09 Gentherm Incorporated Systems and methods for cooling inductive charging assemblies
US9662962B2 (en) 2013-11-05 2017-05-30 Gentherm Incorporated Vehicle headliner assembly for zonal comfort
DE112014005563T5 (de) 2013-12-05 2016-11-24 Gentherm Incorporated Systeme und Verfahren für klimatisierte Sitze
JP6294679B2 (ja) 2014-01-21 2018-03-14 キヤノン株式会社 インプリント装置及び物品の製造方法
US10219323B2 (en) 2014-02-14 2019-02-26 Genthrem Incorporated Conductive convective climate controlled seat
US10160356B2 (en) 2014-05-09 2018-12-25 Gentherm Incorporated Climate control assembly
JP6400090B2 (ja) * 2014-05-29 2018-10-03 キヤノン株式会社 塗布装置、インプリント装置および物品の製造方法
JP6361303B2 (ja) * 2014-06-13 2018-07-25 大日本印刷株式会社 インプリント用モールドおよびインプリント装置
US11639816B2 (en) 2014-11-14 2023-05-02 Gentherm Incorporated Heating and cooling technologies including temperature regulating pad wrap and technologies with liquid system
US11857004B2 (en) 2014-11-14 2024-01-02 Gentherm Incorporated Heating and cooling technologies
CN107251247B (zh) 2014-11-14 2021-06-01 查尔斯·J·柯西 加热和冷却技术
JP6525567B2 (ja) * 2014-12-02 2019-06-05 キヤノン株式会社 インプリント装置及び物品の製造方法
CN104637843B (zh) * 2015-02-02 2017-12-05 京东方科技集团股份有限公司 封装设备和封装方法
JP6992331B2 (ja) * 2017-09-05 2022-01-13 大日本印刷株式会社 インプリントモールド
US10895806B2 (en) 2017-09-29 2021-01-19 Canon Kabushiki Kaisha Imprinting method and apparatus
JP7077754B2 (ja) * 2018-05-08 2022-05-31 大日本印刷株式会社 インプリントモールド用基板、インプリントモールド及びそれらの製造方法
US11223004B2 (en) 2018-07-30 2022-01-11 Gentherm Incorporated Thermoelectric device having a polymeric coating
KR20210095206A (ko) 2018-11-30 2021-07-30 젠썸 인코포레이티드 열전 공조 시스템 및 방법
US11152557B2 (en) 2019-02-20 2021-10-19 Gentherm Incorporated Thermoelectric module with integrated printed circuit board
US11590687B2 (en) 2020-06-30 2023-02-28 Canon Kabushiki Kaisha Systems and methods for reducing pressure while shaping a film

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4279628A (en) 1979-12-31 1981-07-21 Energy Synergistics, Inc. Apparatus for drying a natural gas stream
DE8007086U1 (de) 1980-03-14 1982-03-18 Multivac Sepp Haggenmüller KG, 8941 Wolfertschwenden Vorrichtung zum formen von behaeltnissen aus einer folie
US4767584A (en) 1985-04-03 1988-08-30 Massachusetts Institute Of Technology Process of and apparatus for producing design patterns in materials
DE3514022C1 (de) 1985-04-18 1986-07-10 Fa. Carl Freudenberg, 6940 Weinheim Vorrichtung zum gegenseitigen Verkleben thermisch erweichbarer Partikel zu einem Kunststoffkoerper
US5108532A (en) * 1988-02-02 1992-04-28 Northrop Corporation Method and apparatus for shaping, forming, consolidating and co-consolidating thermoplastic or thermosetting composite products
US5821175A (en) 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
JPH0292603A (ja) * 1988-09-30 1990-04-03 Hoya Corp 案内溝付き情報記録用基板の製造方法
US5545367A (en) 1992-04-15 1996-08-13 Soane Technologies, Inc. Rapid prototype three dimensional stereolithography
FR2690375B1 (fr) 1992-04-22 1994-07-08 Aerospatiale Dispositif de compactage a chaud pour la fabrication de pieces necessitant des montees en pression et en temperature simultanees.
US5997273A (en) 1995-08-01 1999-12-07 Laquer; Henry Louis Differential pressure HIP forging in a controlled gaseous environment
US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US5669303A (en) * 1996-03-04 1997-09-23 Motorola Apparatus and method for stamping a surface
US6257866B1 (en) 1996-06-18 2001-07-10 Hy-Tech Forming Systems, Inc. Apparatus for accurately forming plastic sheet
DE19819761C2 (de) 1998-05-04 2000-05-31 Jenoptik Jena Gmbh Einrichtung zur Trennung eines geformten Substrates von einem Prägewerkzeug
US5997963A (en) 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
US6099771A (en) 1998-07-08 2000-08-08 Lear Corporation Vacuum compression method for forming molded thermoplastic floor mat having a "Class A" finish
US5947027A (en) * 1998-09-08 1999-09-07 Motorola, Inc. Printing apparatus with inflatable means for advancing a substrate towards the stamping surface
JP3291488B2 (ja) 1999-05-27 2002-06-10 三洋電機株式会社 流体の被除去物除去方法
EP1072954A3 (en) * 1999-07-28 2002-05-22 Lucent Technologies Inc. Lithographic process for device fabrication
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
SE515607C2 (sv) * 1999-12-10 2001-09-10 Obducat Ab Anordning och metod vid tillverkning av strukturer
DE10010001A1 (de) * 2000-03-02 2001-09-06 Celanese Ventures Gmbh Neue Blendpolymermembranen zum Einsatz in Brennstoffzellen
JP2001358056A (ja) 2000-06-15 2001-12-26 Canon Inc 露光装置
US7322287B2 (en) * 2000-07-18 2008-01-29 Nanonex Corporation Apparatus for fluid pressure imprint lithography
EP1309897A2 (en) * 2000-08-01 2003-05-14 Board Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
EP1352295B1 (en) * 2000-10-12 2015-12-23 Board of Regents, The University of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
JP2002208563A (ja) 2001-01-09 2002-07-26 Ebara Corp 被加工物の加工装置及び加工方法
JP2003109915A (ja) * 2001-09-28 2003-04-11 National Institute Of Advanced Industrial & Technology 剥離性雰囲気でのインプリントリソグラフィー方法及び装置
US20030071016A1 (en) * 2001-10-11 2003-04-17 Wu-Sheng Shih Patterned structure reproduction using nonsticking mold
US6764386B2 (en) 2002-01-11 2004-07-20 Applied Materials, Inc. Air bearing-sealed micro-processing chamber
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
MY164487A (en) * 2002-07-11 2017-12-29 Molecular Imprints Inc Step and repeat imprint lithography processes
KR20050026088A (ko) * 2002-08-01 2005-03-14 몰레큘러 임프린츠 인코퍼레이티드 임프린트 리소그래피용 산란측정 정렬
JP2004071934A (ja) * 2002-08-08 2004-03-04 Kanegafuchi Chem Ind Co Ltd 微細パターンの製造方法および転写材料
JP3700001B2 (ja) * 2002-09-10 2005-09-28 独立行政法人産業技術総合研究所 インプリント方法及び装置
US20040132301A1 (en) * 2002-09-12 2004-07-08 Harper Bruce M. Indirect fluid pressure imprinting
US6986815B2 (en) 2003-01-08 2006-01-17 General Electric Company Flow system flush process
US6951173B1 (en) * 2003-05-14 2005-10-04 Molecular Imprints, Inc. Assembly and method for transferring imprint lithography templates
JP2005045168A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd インプリント方法およびインプリント装置
JP4313109B2 (ja) * 2003-08-01 2009-08-12 明昌機工株式会社 高精度プレス機
JP2005101201A (ja) * 2003-09-24 2005-04-14 Canon Inc ナノインプリント装置
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7500603B2 (en) * 2004-02-19 2009-03-10 Capital One Financial Corporation Data card
KR100558754B1 (ko) * 2004-02-24 2006-03-10 한국기계연구원 Ｕｖ 나노임프린트 리소그래피 공정 및 이 공정을수행하는 장치
US7316554B2 (en) 2005-09-21 2008-01-08 Molecular Imprints, Inc. System to control an atmosphere between a body and a substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012083578A1 (zh) * 2010-12-22 2012-06-28 青岛理工大学 整片晶圆纳米压印的装置和方法.
US8741199B2 (en) 2010-12-22 2014-06-03 Qingdao Technological University Method and device for full wafer nanoimprint lithography
CN104684710A (zh) * 2012-06-19 2015-06-03 希捷科技有限公司 纳米级空隙的减小
CN104684710B (zh) * 2012-06-19 2017-04-26 希捷科技有限公司 纳米级空隙的减小
CN107430329A (zh) * 2015-02-13 2017-12-01 莫福托尼克斯控股有限公司 纹理化分立基板的方法ii
CN107430329B (zh) * 2015-02-13 2021-02-12 莫福托尼克斯控股有限公司 纹理化分立基板的方法
CN107364057A (zh) * 2017-07-10 2017-11-21 天津工业大学 一种不同粗糙度模板的制备方法
CN118444526A (zh) * 2024-07-05 2024-08-06 苏州新维度微纳科技有限公司 纳米压印模具及纳米压印的方法
CN118444526B (zh) * 2024-07-05 2024-09-24 苏州新维度微纳科技有限公司 纳米压印模具及纳米压印的方法

Also Published As

Publication number Publication date
ATE513625T1 (de) 2011-07-15
US7462028B2 (en) 2008-12-09
US20070275114A1 (en) 2007-11-29
JP4917159B2 (ja) 2012-04-18
KR20080114681A (ko) 2008-12-31
EP2001602B1 (en) 2011-06-22
EP2001602A2 (en) 2008-12-17
JP4536148B2 (ja) 2010-09-01
JP2010179655A (ja) 2010-08-19
WO2007123805A2 (en) 2007-11-01
JP2009532245A (ja) 2009-09-10
EP2001602A4 (en) 2009-04-01
TWI432311B (zh) 2014-04-01
WO2007123805A3 (en) 2007-12-27
TW200744830A (en) 2007-12-16

Similar Documents

Publication Publication Date Title
CN101405087A (zh) 光刻印刷系统
JP5198282B2 (ja) 基板とモールドとの間に位置するガスを排出するための方法
KR101739331B1 (ko) 임프린트 리소그래피 주형
US7927541B2 (en) Full-wafer or large area imprinting with multiple separated sub-fields for high throughput lithography
KR102317458B1 (ko) 임프린팅 방법 및 장치
US7798801B2 (en) Chucking system for nano-manufacturing
JP2004504718A5 (zh)
US20090011139A1 (en) Method for Concurrently Employing Differing Materials to Form a Layer on a Substrate
US20100015270A1 (en) Inner cavity system for nano-imprint lithography
US20110189329A1 (en) Ultra-Compliant Nanoimprint Lithography Template
KR20100035130A (ko) 임프린트 방법
US7736592B2 (en) Microfluidic devices fabricated by direct thick film writing and methods thereof
WO2006083519A2 (en) Method of retaining a substrate to a wafer chuck
KR100543130B1 (ko) 임프린트된 실리콘 기판을 이용한 복합 미세접촉 인쇄방법
TWI306802B (en) Method and system for fast filling of templates for imprint lithography using on template dispense

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090408