TWI432311B - 部份真空環境下之壓印 - Google Patents

部份真空環境下之壓印 Download PDF

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TWI432311B
TWI432311B TW096111836A TW96111836A TWI432311B TW I432311 B TWI432311 B TW I432311B TW 096111836 A TW096111836 A TW 096111836A TW 96111836 A TW96111836 A TW 96111836A TW I432311 B TWI432311 B TW I432311B
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template
substrate
partial vacuum
forming
nanoimprint
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TW200744830A (en
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Anshuman Cherala
Pankaj B Lad
Ian M Mcmackin
Byung-Jin Choi
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Molecular Imprints Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5833—Measuring, controlling or regulating movement of moulds or mould parts, e.g. opening or closing, actuating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Description

部份真空環境下之壓印
本案要請求No.60/788,779美國暫時專利申請案的優先權，其內容併此附送。
發明領域
本發明係有關於部份真空環境下之壓印。
 發明背景
奈米製造包括製造非常小的結構物，例如具有奈米級或更小的特徵細構者。奈米製造已具有可觀影響之一領域是在積體電路的處理。由於半導體製造產業不斷地致力於更大的製造產能，並同時逐增形成於一基材上之每單位面積的電路，故奈米製造變得愈來愈重要。奈米製造能提供更大的製程控制，同時容許更多地縮減所製成結構物的最小特徵尺寸。其它已使用奈米製造的研發領域包括生物科技、光學科技，及機械系統等等。
一種舉例的奈米製造技術一般係稱為壓印微影術。舉例的壓印微影製法曾被詳述於許多公開資料中，例如2004/0065976美國專利申請公開案即美國專利申請案No.10/264,960，其名稱為“用以在一基材上排列細構來複製具有最小尺寸可變性之細構的方法和模具”；2004/0065252美國專利申請公開案即美國專利申請案No.10/264,926，其名稱為“在一基材上形成一層以便製造量測標準的方法”；及No.6,936,194美國專利案，其名稱為“用於壓印微影製法的功能性圖案化材料”，所有該等各案皆已讓渡給本發明的受讓人，且其內容皆併此附送。
在上述各美國專利申請公開案及美國專利中所揭的基礎壓印微影技術皆包括在一可聚合化層中形成一凹凸圖案，並將一對應於該凹凸圖案的圖案移轉至一底下的基材。該基材可被置放在一作動平台上來獲得一妥當的位置以便於其圖案化。一模板會被使用而與該基材間隔分開，並有一可成形的液體存在於該模板與基材之間。該液體會固化來形成一固化層，且會有一圖案記錄其中，其係順應於接觸該液體之模板的表面形狀。該模板嗣會由該固化層釋離，而使該模板與基材間隔分開。該基材和固化層嗣會被進行各製程，以將一對應於該固化層之圖案的紋路影像移轉至該基材中。
 發明概要
依據本發明之一實施例，係特地提出一種在奈米微影壓印製程中於一模板與一基材之間造成一特定環境的系統，包含：一基材；一模板設成靠近該基材而在該模板上之一奈米壓印模與該基材上的一對應位置之間造成一容積的空間；及一裝置用以在該奈米壓印模與基材之間的空間容積內造成一部份的氣體抽空。
圖式簡單說明
第1圖係為一微影系統的簡化側視圖，其具有一模板與一基材間隔分開； 第2圖示出一穿過模板的部份真空環境：a)一具有孔洞之模板的側視圖；b)具有多數孔洞之a)所示模板的頂視圖；c)一具有槽道之模板的側視圖；d)一c)所示模板的頂視圖；第3圖示出一額外的附加板體；第4A圖和4B圖示出一使用向上空氣承墊形成圍繞該模板之半密封物的部份真空環境；及第5圖示出本發明之一變化實施例。
 較佳實施例之詳細說明
請參閱第1圖，一用以在一基材12上形成一凹凸圖案的系統8包含一平台10其上係撐持該基材12，及一模板14其上具有一圖案化表面18。在另一實施例中，基材12可被連接於一基材固持件(未示出)，該基材固持件(未示出)可為任何固持件，包括但不限於真空和電磁式。
模板14及/或模16可由如下材料製成，包括但不限於：熔凝的二氧化矽、石英、矽、有機聚合物、矽氧烷聚合物、硼矽酸鹽玻璃、氟烴聚合物、金屬，及硬化的藍寶石。如所示，圖案化表面18包含由許多間隔分開的凹部17和凸部19所界定的特徵細構。但在另一實施例中，該圖案化表面18可為實質光滑及/或平坦的。圖案化表面18可界定一原始圖案，其會形成要被製設在基材12上之圖案的基礎。
模板14可被連接於一壓印頭20以便於模板14和模16的移動。在另一實施例中，模板14可連接於一模板固持件(未示出)，該模板固持件(未示出)可為任何固持件，包括但不 限於真空和電磁式。一流體配佈系統22會被連接而可被選擇性地定位來與基材12導通流體，俾將聚合材料24沈積其上。應請瞭解該聚合材料24可被使用任何習知技術來沈積，例如滴配、旋塗、沾塗、化學蒸氣沈積(CVD)、物理蒸氣沈積(PVD)等等。而且，聚合材料24可在該模16與基材12之間構建一環境之前先被置放於基材12上，如後所詳述；或在另一實施例中，流體配佈系統22可被置設在基材12與模板14之間。
一能量源26會被連接來沿一路徑30導送能量28。壓印頭20和平台10係被構設成可分別使該模16和基材12呈重疊排列並位於路徑30中。該壓印頭20和平台10之任一者，或其二者，皆可改變該模16與基材12之間的距離俾在其間界定一所需(受控的)容積，其會被聚合材料24填滿。
請參閱第1圖，聚合材料24係在該所需容積被界定於模16與基材12之間之前先被沈積於基材12上。但，聚合材料24亦可在該所需容積已獲得之後才來填滿該容積。在該所需容積填滿聚合材料24之後，該能量源26會產生能量28，例如寬帶能量其會使聚合材料24順應於基材12之表面25和圖案化表面18的形狀來固化及/或交鏈，而在基材12上界定一圖案化層50。
該寬帶能量可包含一光化性成分，包括但不限於：紫外線波長、熱能量、電磁能量、可見光等等。所用的光化性成分乃為熟悉該領域之人所習知，且典型係取決於形成該壓印層的材料。此製程的控制係由一處理器32來規制， 其會與平台10、壓印頭20、流體配佈系統22、能量源26等傳通資料，而依一被儲存在記憶體34內的電腦可讀程式來操作。
以下三種可能性係被認為有助於使壓印微影術更有效率且更且吸引力：1.造成並保持純氦或其它製程氣體的氛圍例如CO2 ；2.部份或全部真空地壓印(以減少填注時間、瑕疵、和氧化中毒)；及3.分離力的減少或消除。
一用以在該模板附近造成並保持一壓力的腔室概念係在該模板的主動區域周圍造成一防漏空間，其嗣可被以氣體加壓或抽空。由於模板的造型，在該主動區域周圍的蝕回區域，當該模板與一晶圓接觸時，乃可方便地提供此一空間。因該蝕回區域係比該主動區域更高約5~15μm，故其亦可對任何氣體/流體提供一非常高的阻流性。
第2a)~d)圖示出使用一模板203、211的部份真空環境，該等模板具有氣體流的槽道213或孔洞204等。最好具有多數的流體源(例如孔洞204等)或一環境的溝槽213，而來在模板205、214的主動區域202、212底下造成一均勻的部份真空。穿過該等開孔204、216的真空流將會抽走既存的空氣或氣體，此將由於該小而長的間隙存在一可觀的壓力減降，而會降低該等主動區域202、212基材201、210之間的壓力。美國專利申請公開案No.2005/0072755，即美國專利申請案No.10/677,639，名稱為“單相流體壓印微影法”，乃 揭述一種引注一流體於該等模板203、211與基材201、210之間的方法，其內容併此附送。
請參閱第3圖，當該模板302不能被鑽孔或加工製設槽道時，其乃可在模板302的外部添設附加板(本體)304，而使該附加板304與模板302之間的小間隙305能在該主動區域306與基材301之間產生一所須的氣體壓力減降。為能將該小間隙保持在5~50μm的範圍內，該附加的延伸部件可在其與配接表面的介面處設有一空氣承墊。
第4圖示出一會在基材402和模板403之間造成部份壓力的部份壓力壓印工具之截面圖。環型真空預載的空氣承墊410能實質地密封該狹小環境405，其可被充注一適當的製程氣體(例如He)來替代空氣。該空氣承墊410之一空氣承墊表面，即空氣承墊介面，係被設成鄰近該板406。槽道(未示出)可造成該環境405的抽氣408，而加壓氣體407能在該板406之空氣承墊基準面與對應的模板平台404之平衡下，被導經該空氣承墊410。當該晶圓的壓印完成後，該向上的空氣承墊可被降低來為該晶圓I/O端作用件提供一通道。
第5圖示出一實施例，其中一噴嘴系統會被用來在該模板502和基材501之間造成一部份的He環境。
8．．．壓印系統
10．．．平台
12．．．基材
14．．．模板
16．．．模
17．．．凹部
19．．．凸部
18．．．圖案化表面
20．．．壓印頭
22．．．流體配佈系統
24．．．聚合材料
26．．．能量源
28．．．能量
30．．．路徑
32．．．處理器
34．．．記憶體
201，210，301，402，501．．．基材
202，212，306．．．主動區域
203，205，211，214，302，403，502．．．模板
204，216．．．孔洞
213．．．槽道
303．．．真空流
304．．．附加板
305．．．間隙
404．．．模板平台
405．．．狹小環境
406．．．板，空氣承墊基準面
407．．．加壓氣體
408．．．抽氣
410．．．空氣承墊
第1圖係為一微影系統的簡化側視圖，其具有一模板與一基材間隔分開；第2圖示出一穿過模板的部份真空環境：a)一具有孔洞之模板的側視圖；b)具有多數孔洞之a)所示模板的頂視圖；c)一具有槽道之模板的側視圖；d)一c)所示模板的頂視圖；第3圖示出一額外的附加板體；第4A圖和4B圖示出一使用向上空氣承墊形成圍繞該模板之半密封物的局部真空環境；及第5圖示出本發明之一變化實施例。
8．．．壓印系統
20．．．壓印頭
10．．．平台
22．．．流體配佈系統
12．．．基材
24．．．聚合材料
14．．．模板
26．．．能量源
16．．．模
28．．．能量
17．．．凹部
30．．．路徑
19．．．凸部
32．．．處理器
18．．．圖案化表面
34．．．記憶體

Claims (5)

  1. 一種用於在奈米微影壓印製程期間形成一特定環境的系統，包含：一基材，係設置在一固持表面上；一模板平台，係具有一空氣承墊基準面；一空氣承墊表面，係設置在環繞該基材且介接該空氣承墊基準面而形成一介面間隙；一模板，係耦合至該模板平台且設置在緊鄰該基材而形成圍繞該模板上之一奈米壓印模與該基材的一受控的容積；及一形成部份真空之裝置，係用以在圍繞該奈米壓印模與該基材的該受控的容積內形成一部份真空，藉此使一氣流通過該介面間隙及該受控的容積而形成該受控的容積內的特定環境。
  2. 如申請專利範圍第1項之系統，其中該模板包含多數孔洞，該等孔洞設置在圍繞該奈米壓印模且穿過該模板，而該形成部份真空之裝置係利用該多數孔洞而在圍繞該奈米壓印模與該基材的該受控的容積內形成部份的氣體抽出。
  3. 如申請專利範圍第1項之系統，其中該模板更包含一槽道，該槽道形成在該模板中且圍繞該奈米壓印模，該槽道連接於該形成部份真空之裝置。
  4. 如申請專利範圍第1項之系統，其中該形成部份真空之裝置更包含一以該空氣承墊表面圍繞該模板的本體，該 本體組構成可在該模板的側邊與該本體的側邊之間形成該介面間隙，藉此，向上穿過該介面間隙的氣流會從該模板與該基材之間抽出氣體。
  5. 如申請專利範圍第1項之系統，更包含一可聚合流體，其被配佈在該奈米壓印模與該基材之間。
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