KR101025378B1 - 전기 접합부에서 반도체의 페르미 레벨을 디피닝하기 위한방법 및 그 접합부들을 통합하는 장치 - Google Patents

전기 접합부에서 반도체의 페르미 레벨을 디피닝하기 위한방법 및 그 접합부들을 통합하는 장치 Download PDF

Info

Publication number
KR101025378B1
KR101025378B1 KR1020057002427A KR20057002427A KR101025378B1 KR 101025378 B1 KR101025378 B1 KR 101025378B1 KR 1020057002427 A KR1020057002427 A KR 1020057002427A KR 20057002427 A KR20057002427 A KR 20057002427A KR 101025378 B1 KR101025378 B1 KR 101025378B1
Authority
KR
South Korea
Prior art keywords
semiconductor
interface layer
less
contact resistance
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057002427A
Other languages
English (en)
Korean (ko)
Other versions
KR20050056969A (ko
Inventor
다니엘 이. 그루프
다니엘 제이. 코넬리
Original Assignee
아콘 테크놀로지스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=31495225&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR101025378(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 아콘 테크놀로지스 인코포레이티드 filed Critical 아콘 테크놀로지스 인코포레이티드
Publication of KR20050056969A publication Critical patent/KR20050056969A/ko
Application granted granted Critical
Publication of KR101025378B1 publication Critical patent/KR101025378B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0277—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming conductor-insulator-semiconductor or Schottky barrier source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/165—Tunnel injectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/649—Schottky drain or source electrodes for FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020057002427A 2002-08-12 2003-08-08 전기 접합부에서 반도체의 페르미 레벨을 디피닝하기 위한방법 및 그 접합부들을 통합하는 장치 Expired - Fee Related KR101025378B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/217,758 US7084423B2 (en) 2002-08-12 2002-08-12 Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US10/217,758 2002-08-12

Publications (2)

Publication Number Publication Date
KR20050056969A KR20050056969A (ko) 2005-06-16
KR101025378B1 true KR101025378B1 (ko) 2011-03-30

Family

ID=31495225

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057002427A Expired - Fee Related KR101025378B1 (ko) 2002-08-12 2003-08-08 전기 접합부에서 반도체의 페르미 레벨을 디피닝하기 위한방법 및 그 접합부들을 통합하는 장치

Country Status (7)

Country Link
US (18) US7084423B2 (enExample)
EP (3) EP3038158B1 (enExample)
JP (1) JP4847699B2 (enExample)
KR (1) KR101025378B1 (enExample)
CN (1) CN100530682C (enExample)
AU (1) AU2003255256A1 (enExample)
WO (1) WO2004030104A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220125069A (ko) * 2021-03-04 2022-09-14 고려대학교 산학협력단 소스/드레인 금속 접촉 형성 시 발생하는 계면 결함의 특성을 추출하는 계면 결함 추출 장치 및 그 동작 방법
US12463054B2 (en) 2022-02-25 2025-11-04 Samsung Electronics Co., Ltd. Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US20070262363A1 (en) * 2003-02-28 2007-11-15 Board Of Regents, University Of Texas System Low temperature fabrication of discrete silicon-containing substrates and devices
US20050045961A1 (en) * 2003-08-29 2005-03-03 Barnak John P. Enhanced gate structure
FR2871936B1 (fr) * 2004-06-21 2006-10-06 Commissariat Energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede
US7229893B2 (en) * 2004-06-23 2007-06-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor device with a high-k gate dielectric
US7279756B2 (en) * 2004-07-21 2007-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with high-k gate dielectric and quasi-metal gate, and method of forming thereof
US7598134B2 (en) 2004-07-28 2009-10-06 Micron Technology, Inc. Memory device forming methods
US7355235B2 (en) * 2004-12-22 2008-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for high-k gate dielectrics
US7332407B2 (en) * 2004-12-23 2008-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for a semiconductor device with a high-k gate dielectric
WO2007080575A1 (en) * 2006-01-09 2007-07-19 Technion Research And Development Foundation Ltd. Transistor structures and methods of fabrication thereof
WO2007101120A1 (en) * 2006-02-23 2007-09-07 Acorn Technologies, Inc. Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s)
US7355254B2 (en) * 2006-06-30 2008-04-08 Intel Corporation Pinning layer for low resistivity N-type source drain ohmic contacts
MX2009010988A (es) 2007-04-13 2010-03-15 Diffusion Pharmaceuticals Llc Uso de trans-carotenoides bipolares como un tratamiento previo y en el tratamiento de una enfermedad vascular periferica.
US7659156B2 (en) * 2007-04-18 2010-02-09 Freescale Semiconductor, Inc. Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer
US8236638B2 (en) 2007-04-18 2012-08-07 Freescale Semiconductor, Inc. Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner
JP2009059996A (ja) * 2007-09-03 2009-03-19 Univ Of Tokyo 半導体装置及びその製造方法
US8324117B2 (en) * 2008-04-28 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a nanocluster-comprising dielectric layer and device comprising such a layer
US8110877B2 (en) 2008-12-19 2012-02-07 Intel Corporation Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
US9166004B2 (en) 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
CN102222687B (zh) * 2011-06-23 2012-12-19 北京大学 一种锗基nmos器件及其制备方法
WO2013077954A1 (en) 2011-11-23 2013-05-30 Acorn Technologies, Inc. Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
KR20140089639A (ko) * 2013-01-03 2014-07-16 삼성전자주식회사 가변 저항 메모리 장치 및 그 형성 방법
TWI692849B (zh) * 2013-05-07 2020-05-01 美商艾肯科技股份有限公司 藉由插入介面原子單層來改善對第ｉｖ族半導體的金屬接觸
TWI756657B (zh) * 2013-05-07 2022-03-01 美商艾肯科技股份有限公司 藉由插入介面原子單層來改善對第iv族半導體的金屬接觸
TWI802231B (zh) * 2013-05-07 2023-05-11 美商艾肯科技股份有限公司 藉由插入介面原子單層來改善對第iv族半導體的金屬接觸
US9917158B2 (en) * 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
US9685509B2 (en) 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
DE102014118874B4 (de) 2014-12-17 2025-09-18 Infineon Technologies Austria Ag Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
US9653570B2 (en) * 2015-02-12 2017-05-16 International Business Machines Corporation Junction interlayer dielectric for reducing leakage current in semiconductor devices
CN106847918B (zh) * 2015-12-04 2022-01-07 Imec 非营利协会 Ge场效应晶体管(FET)和制造方法
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
EP3513427A4 (en) * 2016-09-14 2020-05-06 Applied Materials, Inc. METHOD FOR PRODUCING CONTACTS BETWEEN METAL AND SEMICONDUCTOR
WO2018094205A1 (en) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
JP6439774B2 (ja) * 2016-11-21 2018-12-19 トヨタ自動車株式会社 半導体装置の製造方法
CN108573910B (zh) * 2017-03-07 2020-10-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US20190279981A1 (en) * 2018-03-06 2019-09-12 International Business Machines Corporation Vertical transport complimentary metal-oxide-semiconductor with varying threshold voltages
JP7362546B2 (ja) 2020-05-14 2023-10-17 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
JP7273764B2 (ja) * 2020-08-06 2023-05-15 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
US20220231023A1 (en) * 2021-01-15 2022-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Finfet device and method
US11626288B2 (en) 2021-07-30 2023-04-11 Applied Materials, Inc. Integrated contact silicide with tunable work functions
CN118280825B (zh) * 2024-06-04 2024-08-27 粤芯半导体技术股份有限公司 一种半导体结构及其制作方法
US12154961B1 (en) 2024-06-13 2024-11-26 Globalfoundries U.S. Inc. Ohmic contacts for a high-electron-mobility transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789388A2 (en) * 1995-08-25 1997-08-13 Agency Of Industrial Science And Technology Structure and fabrication method for schottky and ohmic electrodes onto semiconductor devices
US20050021365A1 (en) * 2000-06-09 2005-01-27 Nakfoor Brett A. Multi-input access device and method of using the same

Family Cites Families (294)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US789388A (en) * 1904-03-09 1905-05-09 Crompton & Knowles Loom Works Brake mechanism for looms.
GB122594A (en) 1918-08-08 1919-01-30 George Knight Letts Improvements relating to Kettles, Saucepans, and the like.
US2981877A (en) 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3513366A (en) * 1968-08-21 1970-05-19 Motorola Inc High voltage schottky barrier diode
US3623925A (en) 1969-01-10 1971-11-30 Fairchild Camera Instr Co Schottky-barrier diode process and devices
US3590471A (en) 1969-02-04 1971-07-06 Bell Telephone Labor Inc Fabrication of insulated gate field-effect transistors involving ion implantation
JPS5514531B1 (enExample) 1969-06-18 1980-04-17
US3708360A (en) 1970-06-09 1973-01-02 Texas Instruments Inc Self-aligned gate field effect transistor with schottky barrier drain and source
US3719797A (en) 1971-12-16 1973-03-06 Bell Telephone Labor Inc Solid state temperature sensor employing a pair of dissimilar schottky-barrier diodes
US3983264A (en) 1972-07-20 1976-09-28 Texas Instruments Incorporated Metal-semiconductor ohmic contacts and methods of fabrication
US3877054A (en) 1973-03-01 1975-04-08 Bell Telephone Labor Inc Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor
US3983574A (en) 1973-06-01 1976-09-28 Raytheon Company Semiconductor devices having surface state control
US4019113A (en) 1974-11-20 1977-04-19 James Keith Hartman Energy conversion device
US4110488A (en) 1976-04-09 1978-08-29 Rca Corporation Method for making schottky barrier diodes
US4056642A (en) 1976-05-14 1977-11-01 Data General Corporation Method of fabricating metal-semiconductor interfaces
US4278830A (en) 1977-09-29 1981-07-14 Nasa Schottky barrier solar cell
US4304042A (en) 1978-11-13 1981-12-08 Xerox Corporation Self-aligned MESFETs having reduced series resistance
DE2926874A1 (de) 1979-07-03 1981-01-22 Siemens Ag Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie
US4422090A (en) 1979-07-25 1983-12-20 Northern Telecom Limited Thin film transistors
US4338616A (en) 1980-02-19 1982-07-06 Xerox Corporation Self-aligned Schottky metal semi-conductor field effect transistor with buried source and drain
US4300152A (en) 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4801984A (en) 1980-06-12 1989-01-31 International Business Machines Corporation Semiconductor ohmic contact
JPS5932902B2 (ja) 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
US4691219A (en) 1980-07-08 1987-09-01 International Business Machines Corporation Self-aligned polysilicon base contact structure
JPS57113289A (en) 1980-12-30 1982-07-14 Fujitsu Ltd Semiconductor device and its manufacture
JPS584924A (ja) 1981-07-01 1983-01-12 Hitachi Ltd 半導体装置の電極形成方法
US4485550A (en) 1982-07-23 1984-12-04 At&T Bell Laboratories Fabrication of schottky-barrier MOS FETs
US4521800A (en) * 1982-10-15 1985-06-04 Standard Oil Company (Indiana) Multilayer photoelectrodes utilizing exotic materials
US4485265A (en) 1982-11-22 1984-11-27 President And Fellows Of Harvard College Photovoltaic cell
DE3379367D1 (en) 1982-12-08 1989-04-13 Philips Nv A semiconductor device comprising at least one schottkytype rectifier having controllable barrier height
KR910006249B1 (ko) 1983-04-01 1991-08-17 가부시기가이샤 히다찌세이사꾸쇼 반도체 장치
US4696828A (en) 1984-02-17 1987-09-29 Stauffer Chemical Company Passivation of InP by plasma deposited phosphorus
JPH0673375B2 (ja) 1984-03-19 1994-09-14 富士通株式会社 半導体装置の製造方法
US4845050A (en) 1984-04-02 1989-07-04 General Electric Company Method of making mo/tiw or w/tiw ohmic contacts to silicon
JPS60239066A (ja) 1984-05-11 1985-11-27 Hitachi Ltd 半導体装置
US4583110A (en) * 1984-06-14 1986-04-15 International Business Machines Corporation Intermetallic semiconductor ohmic contact
US4538342A (en) 1984-06-15 1985-09-03 At&T Bell Laboratories Forming platinum contacts to in-based group III-V compound devices
US4752815A (en) 1984-06-15 1988-06-21 Gould Inc. Method of fabricating a Schottky barrier field effect transistor
US4800415A (en) 1984-09-21 1989-01-24 American Telephone And Telegraph Company, At&T Bell Laboratories Bipolar inversion channel device
JPS61133646A (ja) 1984-12-03 1986-06-20 Toshiba Corp 半導体装置の製造方法
JPS61285762A (ja) * 1985-06-12 1986-12-16 Toshiba Corp 半導体装置およびその製造方法
JPS6261363A (ja) 1985-09-11 1987-03-18 Hitachi Ltd 半導体装置
US4723197A (en) * 1985-12-16 1988-02-02 National Semiconductor Corporation Bonding pad interconnection structure
JPH0624251B2 (ja) 1986-01-08 1994-03-30 富士通株式会社 光半導体装置
US4689869A (en) 1986-04-07 1987-09-01 International Business Machines Corporation Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length
US4794444A (en) 1986-04-10 1988-12-27 General Electric Company Ohmic contact and method for making same
US4772934A (en) 1986-06-06 1988-09-20 American Telephone And Telegraph Company, At&T Bell Laboratories Delta-doped ohmic metal to semiconductor contacts
US5021365A (en) 1986-06-16 1991-06-04 International Business Machines Corporation Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
US5098859A (en) * 1986-06-19 1992-03-24 International Business Machines Corporation Method for forming distributed barrier compound semiconductor contacts
WO1988000392A1 (en) 1986-06-24 1988-01-14 American Telephone & Telegraph Company Method for fabricating devices in iii-v semiconductor substrates and devices formed thereby
JPS63157466A (ja) 1986-12-20 1988-06-30 Fujitsu Ltd シヨツトキ−バリアダイオ−ド
JPH0728025B2 (ja) 1987-01-16 1995-03-29 日本電信電話株式会社 半導体装置
US4960732A (en) 1987-02-19 1990-10-02 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
JPH065737B2 (ja) 1987-03-12 1994-01-19 日本電気株式会社 シヨツトキ−接合構造
US4796082A (en) 1987-03-16 1989-01-03 International Business Machines Corporation Thermally stable ohmic contact for gallium-arsenide
EP0283278B1 (en) 1987-03-18 1993-06-23 Fujitsu Limited Compound semiconductor device having nonalloyed ohmic contacts
GB2204066A (en) 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
US4835580A (en) 1987-04-30 1989-05-30 Texas Instruments Incorporated Schottky barrier diode and method
KR920002350B1 (ko) 1987-05-21 1992-03-21 마쯔시다덴기산교 가부시기가이샤 반도체장치의 제조방법
US4811077A (en) 1987-06-18 1989-03-07 International Business Machines Corporation Compound semiconductor surface termination
US5021840A (en) 1987-08-18 1991-06-04 Texas Instruments Incorporated Schottky or PN diode with composite sidewall
US5093280A (en) 1987-10-13 1992-03-03 Northrop Corporation Refractory metal ohmic contacts and method
US4914500A (en) 1987-12-04 1990-04-03 At&T Bell Laboratories Method for fabricating semiconductor devices which include sources and drains having metal-containing material regions, and the resulting devices
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
JPH01186672A (ja) 1988-01-14 1989-07-26 Nec Corp ショットキー接合構造
JP2678017B2 (ja) * 1988-06-13 1997-11-17 シャープ株式会社 アクティブマトリクス表示装置
US5086321A (en) 1988-06-15 1992-02-04 International Business Machines Corporation Unpinned oxide-compound semiconductor structures and method of forming same
US4987095A (en) 1988-06-15 1991-01-22 International Business Machines Corp. Method of making unpinned oxide-compound semiconductor structures
US4999685A (en) 1989-05-16 1991-03-12 United States Of America As Represented By The Secretary Of The Air Force Schotiky barrier height for metal contacts to III-V semiconductor compounds
JPH0329355A (ja) 1989-06-26 1991-02-07 Sanyo Electric Co Ltd 半導体装置
US5801444A (en) * 1989-09-29 1998-09-01 International Business Machines Corporation Multilevel electronic structures containing copper layer and copper-semiconductor layers
US5013685A (en) 1989-11-02 1991-05-07 At&T Bell Laboratories Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
JPH03191518A (ja) 1989-12-20 1991-08-21 Nec Corp 半導体装置およびその製造方法
JP2513055B2 (ja) 1990-02-14 1996-07-03 日本電装株式会社 半導体装置の製造方法
JPH03274735A (ja) 1990-03-26 1991-12-05 Hitachi Ltd ショットキー電極を有する半導体装置の製造方法
US5019530A (en) 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights
US5045502A (en) 1990-05-10 1991-09-03 Bell Communications Research, Inc. PdIn ohmic contact to GaAs
EP0458353B1 (en) 1990-05-24 1996-09-18 Sumitomo Electric Industries, Ltd. Ohmic contact electrodes for n-type semiconductor cubic boron nitride
EP0465961B1 (en) 1990-07-09 1995-08-09 Sony Corporation Semiconductor device on a dielectric isolated substrate
GB9015871D0 (en) 1990-07-19 1990-09-05 Secr Defence Ohmic contact for p-type gaas
KR970009120B1 (en) 1990-07-27 1997-06-05 Samsung Electronics Co Ltd Printing control method for a video color printer
JP3061406B2 (ja) 1990-09-28 2000-07-10 株式会社東芝 半導体装置
JPH04199628A (ja) 1990-11-29 1992-07-20 Seiko Epson Corp 半導体装置の製造方法
US5238872A (en) 1990-12-11 1993-08-24 Samsung Semiconductor, Inc. Barrier metal contact architecture
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JPH04284668A (ja) 1991-03-14 1992-10-09 Fujitsu Ltd 半導体装置及びその製造方法
JP2756886B2 (ja) 1991-08-30 1998-05-25 三菱電機株式会社 半導体装置およびその製造方法
US5216282A (en) 1991-10-29 1993-06-01 International Business Machines Corporation Self-aligned contact studs for semiconductor structures
AU3226793A (en) 1991-11-26 1993-06-28 Materials Research Corporation Method of modifying contact resistance in semiconductor devices and articles produced thereby
JPH05206054A (ja) * 1992-01-29 1993-08-13 Nec Corp Ａｌコンタクト構造およびその製造方法
US5231306A (en) 1992-01-31 1993-07-27 Micron Technology, Inc. Titanium/aluminum/nitrogen material for semiconductor devices
US5216262A (en) * 1992-03-02 1993-06-01 Raphael Tsu Quantum well structures useful for semiconductor devices
JP3152739B2 (ja) 1992-05-19 2001-04-03 株式会社日立製作所 半導体集積回路装置の製造方法
JP3208599B2 (ja) 1992-05-28 2001-09-17 ソニー株式会社 接続孔埋め込み形成方法
US5294834A (en) 1992-06-01 1994-03-15 Sverdrup Technology, Inc. Low resistance contacts for shallow junction semiconductors
JPH0653165A (ja) 1992-07-28 1994-02-25 Sony Corp メタルプラグの形成方法
US5292677A (en) 1992-09-18 1994-03-08 Micron Technology, Inc. Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts
KR950010873B1 (ko) 1993-02-27 1995-09-25 삼성전자주식회사 반도체장치의 제조방법
KR960008558B1 (en) 1993-03-02 1996-06-28 Samsung Electronics Co Ltd Low resistance contact structure and manufacturing method of high integrated semiconductor device
US5306386A (en) 1993-04-06 1994-04-26 Hughes Aircraft Company Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates
US5480829A (en) 1993-06-25 1996-01-02 Motorola, Inc. Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts
TW295703B (enExample) * 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
JP3688727B2 (ja) 1993-08-20 2005-08-31 財団法人国際科学振興財団 半導体装置の製造方法
US5592736A (en) 1993-09-03 1997-01-14 Micron Technology, Inc. Fabricating an interconnect for testing unpackaged semiconductor dice having raised bond pads
US5596218A (en) 1993-10-18 1997-01-21 Digital Equipment Corporation Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation
US5438210A (en) 1993-10-22 1995-08-01 Worley; Eugene R. Optical isolation connections using integrated circuit techniques
US5358574A (en) 1993-11-22 1994-10-25 Midwest Research Institute Dry texturing of solar cells
JPH07183493A (ja) 1993-12-24 1995-07-21 Mitsubishi Electric Corp 半導体装置
KR100362751B1 (ko) 1994-01-19 2003-02-11 소니 가부시끼 가이샤 반도체소자의콘택트홀및그형성방법
JP3294041B2 (ja) 1994-02-21 2002-06-17 株式会社東芝 半導体装置
JPH07235672A (ja) 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
DE4405716C2 (de) 1994-02-23 1996-10-31 Telefunken Microelectron Verfahren zur Herstellung von ohmschen Kontakten für Verbindungshalbleiter
US5962883A (en) 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US5624869A (en) * 1994-04-13 1997-04-29 International Business Machines Corporation Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
US5624868A (en) 1994-04-15 1997-04-29 Micron Technology, Inc. Techniques for improving adhesion of silicon dioxide to titanium
US6011271A (en) * 1994-04-28 2000-01-04 Fujitsu Limited Semiconductor device and method of fabricating the same
US5478765A (en) 1994-05-04 1995-12-26 Regents Of The University Of Texas System Method of making an ultra thin dielectric for electronic devices
US5663584A (en) 1994-05-31 1997-09-02 Welch; James D. Schottky barrier MOSFET systems and fabrication thereof
US5442200A (en) 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
JPH11307633A (ja) 1997-11-17 1999-11-05 Sony Corp 低誘電率膜を有する半導体装置、およびその製造方法
JPH0864800A (ja) 1994-08-25 1996-03-08 Hitachi Ltd 炭化珪素半導体素子
JP2630279B2 (ja) 1994-10-12 1997-07-16 日本電気株式会社 ショットキー型光検出器およびその駆動方法
JP2938351B2 (ja) 1994-10-18 1999-08-23 株式会社フロンテック 電界効果トランジスタ
KR0148597B1 (ko) 1994-11-23 1998-10-15 정선종 왜곡 성장층을 이용한 금속/반도체 접합 쇼트키 다이오드 광소자
JP3198453B2 (ja) 1994-12-15 2001-08-13 シャープ株式会社 半導体装置及びその製造方法
SE504916C2 (sv) * 1995-01-18 1997-05-26 Ericsson Telefon Ab L M Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
US5689125A (en) 1995-06-12 1997-11-18 The United States Of America As Represented By The Secretary Of The Air Force Cadmium sulfide interface layers for improving III-V semiconductor device performance and characteristics
US5534449A (en) 1995-07-17 1996-07-09 Micron Technology, Inc. Methods of forming complementary metal oxide semiconductor (CMOS) integrated circuitry
EP0757393A3 (en) 1995-08-02 1999-11-03 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and method for fabricating the same
JPH0964336A (ja) 1995-08-25 1997-03-07 Advantest Corp 原子層ドーピングによる半導体のオーム性電極構造及びその形成方法
KR970030333A (ko) 1995-11-03 1997-06-26 김주용 반도체소자의 도전 배선 콘택 제조방법
KR100197653B1 (ko) 1995-12-15 1999-06-15 김영환 반도체 소자의 콘택 형성방법
GB9525784D0 (en) 1995-12-16 1996-02-14 Philips Electronics Nv Hot carrier transistors and their manufacture
FR2742924B1 (fr) 1995-12-22 1998-03-20 Jorge Luis Regolini Procede de depot selectif d'un siliciure de metal refractaire sur du silicium et plaquette de silicium metallisee par ce procede
SG46751A1 (en) 1996-01-11 1998-02-20 Taiwan Semiconductor Mfg A modified tungsten-plug contact process
SE9600199D0 (sv) 1996-01-19 1996-01-19 Abb Research Ltd A semiconductor device with a low resistance ohmic contact between a metal layer and a SiC-layer
TW367528B (en) 1996-02-02 1999-08-21 Applied Materials Inc Titanium aluminide wetting layer for aluminum contacts
JPH09289178A (ja) 1996-02-22 1997-11-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US5929523A (en) 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
US6388272B1 (en) 1996-03-07 2002-05-14 Caldus Semiconductor, Inc. W/WC/TAC ohmic and rectifying contacts on SiC
US5654234A (en) 1996-04-29 1997-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming a void-free tungsten-plug contact in the presence of a contact opening overhang
US5612567A (en) 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
FR2749977B1 (fr) 1996-06-14 1998-10-09 Commissariat Energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci
JPH1027847A (ja) 1996-07-09 1998-01-27 Mitsubishi Electric Corp 集積化半導体素子
JP3217015B2 (ja) 1996-07-18 2001-10-09 インターナショナル・ビジネス・マシーンズ・コーポレーション 電界効果トランジスタの形成方法
US5869364A (en) 1996-07-22 1999-02-09 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)
US5763923A (en) 1996-08-13 1998-06-09 Micron Technology, Inc. Compound PVD target material for semiconductor metallization
TW333713B (en) 1996-08-20 1998-06-11 Toshiba Co Ltd The semiconductor device and its producing method
US5888891A (en) 1996-08-23 1999-03-30 International Rectifier Corporation Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability
US5939763A (en) 1996-09-05 1999-08-17 Advanced Micro Devices, Inc. Ultrathin oxynitride structure and process for VLSI applications
KR100495543B1 (ko) 1996-09-17 2005-09-08 마츠시타 덴끼 산교 가부시키가이샤 반도체장치및그제조방법
US6399970B2 (en) 1996-09-17 2002-06-04 Matsushita Electric Industrial Co., Ltd. FET having a Si/SiGeC heterojunction channel
US5789312A (en) 1996-10-30 1998-08-04 International Business Machines Corporation Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics
US5897331A (en) 1996-11-08 1999-04-27 Midwest Research Institute High efficiency low cost thin film silicon solar cell design and method for making
JPH10163468A (ja) * 1996-12-03 1998-06-19 Kagaku Gijutsu Shinko Jigyodan 膜状複合構造体
US6320238B1 (en) 1996-12-23 2001-11-20 Agere Systems Guardian Corp. Gate structure for integrated circuit fabrication
US5908313A (en) 1996-12-31 1999-06-01 Intel Corporation Method of forming a transistor
JPH10209569A (ja) 1997-01-16 1998-08-07 Hewlett Packard Co <Hp> ｐ型窒化物半導体装置とその製造方法
JP3060976B2 (ja) 1997-01-21 2000-07-10 日本電気株式会社 Ｍｏｓｆｅｔおよびその製造方法
US6015997A (en) 1997-02-19 2000-01-18 Micron Technology, Inc. Semiconductor structure having a doped conductive layer
US6130503A (en) 1997-03-04 2000-10-10 Pioneer Electronic Corporation Electron emission device and display using the same
JPH10335265A (ja) 1997-05-27 1998-12-18 Sony Corp 半導体装置の製造方法
JPH10335637A (ja) 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6222267B1 (en) 1997-06-17 2001-04-24 Yamaha Corporation Semiconductor device and manufacturing thereof
JP3191728B2 (ja) 1997-06-23 2001-07-23 日本電気株式会社 半導体装置及びその製造方法
JPH1126713A (ja) 1997-06-30 1999-01-29 Hitachi Ltd 半導体集積回路装置およびその製造方法
DE19729396A1 (de) 1997-07-09 1999-01-14 Siemens Ag Elektrischer Kontakt für ein II-VI-Halbleiterbauelement und Verfahren zum Herstellen des elektrischen Kontaktes
US6020243A (en) 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
JP3457511B2 (ja) 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
KR19990025041A (ko) 1997-09-10 1999-04-06 김영환 반도체장치의 캐패시터 제조방법
JPH11150084A (ja) 1997-09-12 1999-06-02 Canon Inc 半導体装置および基板上への非晶質窒化硅素チタンの形成方法
US6462931B1 (en) * 1997-10-23 2002-10-08 Texas Instruments Incorporated High-dielectric constant capacitor and memory
JP4067159B2 (ja) 1997-12-01 2008-03-26 新電元工業株式会社 半導体装置および半導体装置の製造方法
US6207976B1 (en) 1997-12-17 2001-03-27 Fujitsu Limited Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
KR100290467B1 (ko) 1997-12-31 2001-08-07 박종섭 반도체소자의확산방지막형성방법
US6268233B1 (en) 1998-01-26 2001-07-31 Canon Kabushiki Kaisha Photovoltaic device
JP3855019B2 (ja) 1998-02-10 2006-12-06 独立行政法人 日本原子力研究開発機構 金属、酸化膜及び炭化珪素半導体からなる積層構造体
US5985759A (en) 1998-02-24 1999-11-16 Applied Materials, Inc. Oxygen enhancement of ion metal plasma (IMP) sputter deposited barrier layers
US6284316B1 (en) * 1998-02-25 2001-09-04 Micron Technology, Inc. Chemical vapor deposition of titanium
US6303942B1 (en) 1998-03-17 2001-10-16 Farmer, Ii Kenneth Rudolph Multi-layer charge injection barrier and uses thereof
US6303969B1 (en) 1998-05-01 2001-10-16 Allen Tan Schottky diode with dielectric trench
KR100261170B1 (ko) 1998-05-06 2000-07-01 김영환 반도체소자 및 그 제조방법
JP3436132B2 (ja) 1998-05-13 2003-08-11 セイコーエプソン株式会社 半導体装置
JP3699823B2 (ja) 1998-05-19 2005-09-28 株式会社東芝 半導体装置
US6225168B1 (en) 1998-06-04 2001-05-01 Advanced Micro Devices, Inc. Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof
US6657300B2 (en) 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP3175696B2 (ja) 1998-06-10 2001-06-11 日本電気株式会社 半導体装置の製造方法
US6017790A (en) 1998-07-06 2000-01-25 United Microelectronics Corp. Method of manufacturing embedded dynamic random access memory
US6071783A (en) 1998-08-13 2000-06-06 Taiwan Semiconductor Manufacturing Company Pseudo silicon on insulator MOSFET device
US6972436B2 (en) 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
EP1114465B1 (de) 1998-09-02 2007-03-21 SiCED Electronics Development GmbH & Co KG Halbleitervorrichtung mit ohmscher kontaktierung und verfahren zur ohmschen kontaktierung einer halbleitervorrichtung
US6555455B1 (en) 1998-09-03 2003-04-29 Micron Technology, Inc. Methods of passivating an oxide surface subjected to a conductive material anneal
JP3361062B2 (ja) 1998-09-17 2003-01-07 株式会社東芝 半導体装置
JP2000101064A (ja) 1998-09-25 2000-04-07 Sanyo Electric Co Ltd 電極、ＳｉＣの電極及びＳｉＣデバイス
JP3606095B2 (ja) 1998-10-06 2005-01-05 セイコーエプソン株式会社 半導体装置の製造方法
KR100434534B1 (ko) 1998-10-13 2004-07-16 삼성전자주식회사 쇼트키 터널 장벽을 이용한 단일 전자 트랜지스터 및 그 제조방법
JP3528665B2 (ja) 1998-10-20 2004-05-17 セイコーエプソン株式会社 半導体装置の製造方法
KR20000027908A (ko) 1998-10-29 2000-05-15 로버트 에이치. 씨. 챠오 임베디드 디램의 제조 방법
JP4228250B2 (ja) 1998-12-02 2009-02-25 富士通株式会社 化合物半導体装置
JP3381690B2 (ja) 1998-12-02 2003-03-04 日本電気株式会社 電界効果トランジスタおよびその製造方法
JP4540142B2 (ja) 1999-01-19 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2000216241A (ja) 1999-01-20 2000-08-04 Applied Materials Inc 半導体装置の製造方法
US6737716B1 (en) 1999-01-29 2004-05-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP3223903B2 (ja) 1999-02-17 2001-10-29 日本電気株式会社 電界効果トランジスタ及びその製造方法
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
US6396191B1 (en) 1999-03-11 2002-05-28 Eneco, Inc. Thermal diode for energy conversion
US6459095B1 (en) 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
JP3934822B2 (ja) 1999-04-13 2007-06-20 新日本無線株式会社 ショットキーダイオードおよびその製造方法
US6724088B1 (en) 1999-04-20 2004-04-20 International Business Machines Corporation Quantum conductive barrier for contact to shallow diffusion region
US6117781A (en) 1999-04-22 2000-09-12 Advanced Micro Devices, Inc. Optimized trench/via profile for damascene processing
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
US6287946B1 (en) 1999-05-05 2001-09-11 Hrl Laboratories, Llc Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
FR2793602B1 (fr) 1999-05-12 2001-08-03 Univ Claude Bernard Lyon Procede et dispositif pour extraire des electrons dans le vide et cathodes d'emission pour un tel dispositif
US6293137B1 (en) * 2000-05-04 2001-09-25 National Science Council Hydrogen sensor
JP2000349285A (ja) 1999-06-04 2000-12-15 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
US6274905B1 (en) 1999-06-30 2001-08-14 Fairchild Semiconductor Corporation Trench structure substantially filled with high-conductivity material
US6344673B1 (en) 1999-07-01 2002-02-05 International Business Machines Corporation Multilayered quantum conducting barrier structures
US6261932B1 (en) 1999-07-29 2001-07-17 Fairchild Semiconductor Corp. Method of fabricating Schottky diode and related structure
US6339232B1 (en) 1999-09-20 2002-01-15 Kabushika Kaisha Toshiba Semiconductor device
US20030132452A1 (en) 1999-09-20 2003-07-17 Masatada Boriuchi Semiconductor device and method of producing the same
JP3329380B2 (ja) * 1999-09-21 2002-09-30 日本電気株式会社 半導体装置およびその製造方法
US6284557B1 (en) 1999-10-12 2001-09-04 Taiwan Semiconductor Manufacturing Company Optical sensor by using tunneling diode
JP2003512153A (ja) 1999-10-20 2003-04-02 ネオキスメット エルエルシー 固体表面触媒反応装置
US6373076B1 (en) 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6303479B1 (en) 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US20030235936A1 (en) 1999-12-16 2003-12-25 Snyder John P. Schottky barrier CMOS device and method
US6228732B1 (en) * 1999-12-22 2001-05-08 Sony Corporation Tunnel nitride for improved polysilicon emitter
US6150286A (en) 2000-01-03 2000-11-21 Advanced Micro Devices, Inc. Method of making an ultra thin silicon nitride film
US6509254B1 (en) 2000-01-20 2003-01-21 Matsushita Electric Industrial Co., Ltd. Method of forming electrode structure and method of fabricating semiconductor device
FR2805395B1 (fr) 2000-02-23 2002-05-10 Centre Nat Rech Scient Transistor mos pour circuits a haute densite d'integration
DE10010821A1 (de) 2000-02-29 2001-09-13 Infineon Technologies Ag Verfahren zur Erhöhung der Kapazität in einem Speichergraben und Grabenkondensator mit erhöhter Kapazität
TW497120B (en) 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
US6451690B1 (en) 2000-03-13 2002-09-17 Matsushita Electronics Corporation Method of forming electrode structure and method of fabricating semiconductor device
JP4751498B2 (ja) 2000-03-30 2011-08-17 富士通株式会社 半導体三端子装置
US6509586B2 (en) 2000-03-31 2003-01-21 Fujitsu Limited Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit
JP2001298186A (ja) 2000-04-14 2001-10-26 Hitachi Ltd 半導体装置およびその製造方法
US6326294B1 (en) 2000-04-27 2001-12-04 Kwangju Institute Of Science And Technology Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
US6380021B1 (en) * 2000-06-20 2002-04-30 Taiwan Semiconductor Manufacturing Company Ultra-shallow junction formation by novel process sequence for PMOSFET
US6444516B1 (en) 2000-07-07 2002-09-03 International Business Machines Corporation Semi-insulating diffusion barrier for low-resistivity gate conductors
JP3833903B2 (ja) 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
JP3563032B2 (ja) 2000-12-18 2004-09-08 株式会社東芝 半導体装置及びその製造方法
JP3305301B2 (ja) 2000-08-02 2002-07-22 松下電器産業株式会社 電極構造体の形成方法及び半導体装置の製造方法
US6521502B1 (en) 2000-08-07 2003-02-18 Advanced Micro Devices, Inc. Solid phase epitaxy activation process for source/drain junction extensions and halo regions
US7082838B2 (en) 2000-08-31 2006-08-01 Tdk Corporation Extraordinary piezoconductance in inhomogeneous semiconductors
JP4179492B2 (ja) 2000-09-01 2008-11-12 日産自動車株式会社 オーミック電極構造体、その製造方法、及びオーミック電極を用いた半導体装置
US6563151B1 (en) 2000-09-05 2003-05-13 Samsung Electronics Co., Ltd. Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same
JP4671314B2 (ja) 2000-09-18 2011-04-13 独立行政法人産業技術総合研究所 オーミック電極構造体の製造方法、接合型ｆｅｔ又は接合型ｓｉｔのオーミック電極構造体の製造方法、及び半導体装置の製造方法
FR2814856B1 (fr) 2000-10-03 2003-07-11 St Microelectronics Sa Procede de realisation d'un contact sur un varbure de silicium
US6599644B1 (en) 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US7132309B2 (en) 2003-04-22 2006-11-07 Chien-Min Sung Semiconductor-on-diamond devices and methods of forming
JP4058231B2 (ja) 2000-11-13 2008-03-05 株式会社東芝 半導体装置の製造方法
WO2002043109A2 (de) * 2000-11-21 2002-05-30 Infineon Technologies Ag Verfahren zum herstellen eines planaren feldeffekttransistors und planarer feldeffekttransistor
US6646302B2 (en) 2000-11-21 2003-11-11 Cornell Research Foundation, Inc. Embedded metal nanocrystals
JP2002217425A (ja) 2001-01-16 2002-08-02 Sanken Electric Co Ltd 半導体装置用電極、半導体装置及びその製造方法
JP3992439B2 (ja) 2001-01-16 2007-10-17 株式会社ルネサステクノロジ 半導体装置の製造方法
US6844604B2 (en) 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
US7945592B2 (en) 2001-03-20 2011-05-17 Verizon Business Global Llc XML based transaction detail records
JP2002359437A (ja) 2001-03-29 2002-12-13 Toshiba Electronic Engineering Corp 光半導体素子および光半導体素子の製造方法
JP3696119B2 (ja) 2001-04-26 2005-09-14 株式会社日立製作所 半導体装置、及び半導体装置の製造方法
US6423604B1 (en) * 2001-05-01 2002-07-23 Advanced Micro Devices, Inc. Determination of thermal resistance for field effect transistor formed in SOI technology
US6563185B2 (en) * 2001-05-21 2003-05-13 The Regents Of The University Of Colorado High speed electron tunneling device and applications
KR100403313B1 (ko) * 2001-05-22 2003-10-30 주식회사 하이닉스반도체 바이폴라 접합 트랜지스터를 이용한 마그네틱 램 및 그형성방법
US6580141B2 (en) 2001-06-01 2003-06-17 General Semiconductor, Inc. Trench schottky rectifier
US7291884B2 (en) 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
JP2003092271A (ja) 2001-07-13 2003-03-28 Seiko Epson Corp 半導体装置及びその製造方法
US6947392B2 (en) 2001-07-16 2005-09-20 International Business Machines Corporation Methods and arrangements for building a subsource address multicast distribution tree using traced routes
US20030015707A1 (en) 2001-07-17 2003-01-23 Motorola, Inc. Integrated radio frequency , optical, photonic, analog and digital functions in a semiconductor structure and method for fabricating semiconductor structure utilizing the formation of a compliant substrate for materials used to form the same
GB0118000D0 (en) 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Manufacture of semiconductor devices with schottky barriers
US20030020069A1 (en) 2001-07-25 2003-01-30 Motorola, Inc. Structure and method for optimizing transmission media through dielectric layering and doping in semiconductor structures and devices utilizing the formation of a compliant substrate
US6605832B2 (en) 2001-07-31 2003-08-12 Xerox Corporation Semiconductor structures having reduced contact resistance
DE10138981B4 (de) 2001-08-08 2005-09-08 Infineon Technologies Ag Verfahren zur Bildung von Siliziumoxid durch elektrochemische Oxidation eines Halbleiter-Substrats mit Vertiefungen
JP2005508077A (ja) * 2001-10-22 2005-03-24 イェール ユニバーシティ 半導体材料のハイパードーピング方法、ハイパードープされた半導体材料、および、ハイパードープされた半導体装置
US20030098489A1 (en) 2001-11-29 2003-05-29 International Business Machines Corporation High temperature processing compatible metal gate electrode for pFETS and methods for fabrication
JP2003179049A (ja) 2001-12-11 2003-06-27 Matsushita Electric Ind Co Ltd 絶縁膜形成方法、半導体装置及びその製造方法
US6511905B1 (en) 2002-01-04 2003-01-28 Promos Technologies Inc. Semiconductor device with Si-Ge layer-containing low resistance, tunable contact
JP2003332582A (ja) 2002-05-13 2003-11-21 Toshiba Corp 半導体装置及びその製造方法
US6690072B2 (en) 2002-05-24 2004-02-10 International Business Machines Corporation Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned COSI2 on raised source drain Si/SiGe device
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
JP4643884B2 (ja) 2002-06-27 2011-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6943575B2 (en) 2002-07-29 2005-09-13 Micron Technology, Inc. Method, circuit and system for determining burn-in reliability from wafer level burn-in
US20040029087A1 (en) 2002-08-08 2004-02-12 Rodney White System and method for training and managing gaming personnel
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
JP4238041B2 (ja) 2003-02-06 2009-03-11 アドバンスト ダイシング テクノロジース リミテッド ダイシング装置、ダイシング方法及び半導体装置の製造方法
US7030430B2 (en) 2003-08-15 2006-04-18 Intel Corporation Transition metal alloys for use as a gate electrode and devices incorporating these alloys
US7358196B2 (en) 2005-02-07 2008-04-15 Applied Materials, Inc. Wet chemical treatment to form a thin oxide for high k gate dielectrics
US20070141798A1 (en) * 2005-12-20 2007-06-21 Intel Corporation Silicide layers in contacts for high-k/metal gate transistors
US7851325B1 (en) 2008-09-12 2010-12-14 Acorn Technologies, Inc. Strained semiconductor using elastic edge relaxation, a buried stressor layer and a sacrificial stressor layer
US8110877B2 (en) 2008-12-19 2012-02-07 Intel Corporation Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
CN102227001B (zh) * 2011-06-23 2013-03-06 北京大学 一种锗基nmos器件及其制备方法
US9224610B2 (en) * 2013-06-28 2015-12-29 GlobalFoundries, Inc. Integrated circuits having improved high-K dielectric layers and methods for fabrication of same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0789388A2 (en) * 1995-08-25 1997-08-13 Agency Of Industrial Science And Technology Structure and fabrication method for schottky and ohmic electrodes onto semiconductor devices
US20050021365A1 (en) * 2000-06-09 2005-01-27 Nakfoor Brett A. Multi-input access device and method of using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220125069A (ko) * 2021-03-04 2022-09-14 고려대학교 산학협력단 소스/드레인 금속 접촉 형성 시 발생하는 계면 결함의 특성을 추출하는 계면 결함 추출 장치 및 그 동작 방법
KR102563383B1 (ko) 2021-03-04 2023-08-03 고려대학교 산학협력단 소스/드레인 금속 접촉 형성 시 발생하는 계면 결함의 특성을 추출하는 계면 결함 추출 장치 및 그 동작 방법
US12463054B2 (en) 2022-02-25 2025-11-04 Samsung Electronics Co., Ltd. Method of fabricating a semiconductor device using a sacrificial layer and semiconductor device fabricated using the method

Also Published As

Publication number Publication date
AU2003255256A1 (en) 2004-04-19
JP2005536070A (ja) 2005-11-24
EP1543561A1 (en) 2005-06-22
US20210305392A1 (en) 2021-09-30
US8766336B2 (en) 2014-07-01
US10950707B2 (en) 2021-03-16
US20110169124A1 (en) 2011-07-14
US20050247956A1 (en) 2005-11-10
US7084423B2 (en) 2006-08-01
US20160372564A1 (en) 2016-12-22
US20120280294A1 (en) 2012-11-08
EP1543561B1 (en) 2017-04-05
US10937880B2 (en) 2021-03-02
US20130119446A1 (en) 2013-05-16
CN1675774A (zh) 2005-09-28
WO2004030104A1 (en) 2004-04-08
US7884003B2 (en) 2011-02-08
EP3038158A1 (en) 2016-06-29
US9209261B2 (en) 2015-12-08
US20190334006A1 (en) 2019-10-31
US10090395B2 (en) 2018-10-02
JP4847699B2 (ja) 2011-12-28
CN100530682C (zh) 2009-08-19
US9461167B2 (en) 2016-10-04
US11018237B2 (en) 2021-05-25
US20040026687A1 (en) 2004-02-12
US10186592B2 (en) 2019-01-22
US20150287800A1 (en) 2015-10-08
US9425277B2 (en) 2016-08-23
US20180269298A1 (en) 2018-09-20
EP3038158B1 (en) 2020-06-24
US11056569B2 (en) 2021-07-06
KR20050056969A (ko) 2005-06-16
US20180033862A1 (en) 2018-02-01
US11355613B2 (en) 2022-06-07
US8431469B2 (en) 2013-04-30
US9812542B2 (en) 2017-11-07
US9905691B2 (en) 2018-02-27
US20200273961A1 (en) 2020-08-27
US20090104770A1 (en) 2009-04-23
US10388748B2 (en) 2019-08-20
US7462860B2 (en) 2008-12-09
US20200243662A1 (en) 2020-07-30
US20200273960A1 (en) 2020-08-27
US20160172492A1 (en) 2016-06-16
US20180166552A1 (en) 2018-06-14
US20160172491A1 (en) 2016-06-16
EP3043385B1 (en) 2020-06-17
EP3043385A1 (en) 2016-07-13

Similar Documents

Publication Publication Date Title
KR101025378B1 (ko) 전기 접합부에서 반도체의 페르미 레벨을 디피닝하기 위한방법 및 그 접합부들을 통합하는 장치
US7176483B2 (en) Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140311

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20150309

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160309

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170315

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180308

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190312

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230322

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230322

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000