FR2814856B1 - Procede de realisation d'un contact sur un varbure de silicium - Google Patents

Procede de realisation d'un contact sur un varbure de silicium

Info

Publication number
FR2814856B1
FR2814856B1 FR0012601A FR0012601A FR2814856B1 FR 2814856 B1 FR2814856 B1 FR 2814856B1 FR 0012601 A FR0012601 A FR 0012601A FR 0012601 A FR0012601 A FR 0012601A FR 2814856 B1 FR2814856 B1 FR 2814856B1
Authority
FR
France
Prior art keywords
varbide
silicon
making
contact
silicon varbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0012601A
Other languages
English (en)
Other versions
FR2814856A1 (fr
Inventor
Emmanuel Collard
Dominique Defives
Olivier Noblanc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0012601A priority Critical patent/FR2814856B1/fr
Publication of FR2814856A1 publication Critical patent/FR2814856A1/fr
Application granted granted Critical
Publication of FR2814856B1 publication Critical patent/FR2814856B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
FR0012601A 2000-10-03 2000-10-03 Procede de realisation d'un contact sur un varbure de silicium Expired - Fee Related FR2814856B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0012601A FR2814856B1 (fr) 2000-10-03 2000-10-03 Procede de realisation d'un contact sur un varbure de silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0012601A FR2814856B1 (fr) 2000-10-03 2000-10-03 Procede de realisation d'un contact sur un varbure de silicium

Publications (2)

Publication Number Publication Date
FR2814856A1 FR2814856A1 (fr) 2002-04-05
FR2814856B1 true FR2814856B1 (fr) 2003-07-11

Family

ID=8854939

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0012601A Expired - Fee Related FR2814856B1 (fr) 2000-10-03 2000-10-03 Procede de realisation d'un contact sur un varbure de silicium

Country Status (1)

Country Link
FR (1) FR2814856B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
CN107578994B (zh) 2011-11-23 2020-10-30 阿科恩科技公司 通过插入界面原子单层改进与iv族半导体的金属接触
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (fr) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Transistor à nanofils à source et drain induits par des contacts électriques avec une hauteur de barrière de schottky négative

Also Published As

Publication number Publication date
FR2814856A1 (fr) 2002-04-05

Similar Documents

Publication Publication Date Title
FR2825834B1 (fr) Procede de fabrication d'un disositif a semi-conducteur
FR2813144B1 (fr) Procede pour empecher la courbure de couches de semiconducteur et dispositif a semiconducteur forme par ce procede
DE69936526D1 (de) Silizium dünnschicht photoelektrische vorrichtung
DE69935182D1 (de) Halbleiteranordnung
DE69933257D1 (de) Lithographische Vorrichtung
DE69840608D1 (de) Selbsttastende photoempfindliche oberfläche
SG93833A1 (en) Method for forming a semiconductor device
FR2773417B1 (fr) Procede de formation d'un contact auto-aligne dans un dipositif a semiconducteur
FR2790842B1 (fr) Procede de fabrication d'un circuit de test sur une plaquette de silicium
FR2784229B1 (fr) Procede de formation d'un contact autoaligne dans un dispositif a semiconducteur
ITGE20010079A0 (it) Dispositivo per l'agugliatura di un'0vatta
FR2814856B1 (fr) Procede de realisation d'un contact sur un varbure de silicium
FR2779008B1 (fr) Procede de fabrication d'un dispositif a semiconducteur
FR2797999B1 (fr) Procede de fabrication d'une capacite integree sur un substrat de silicium
GB2338106B (en) Method for fabricating a contact of a semiconductor device
FR2786926B1 (fr) Procede de fabrication d'un dispositif a semiconducteur du type soi
ITTO20001146A0 (it) Dispositivo per l'allineamento di un tornio per freni su vetture.
FR2772290B1 (fr) Procede de nettoyage d'un polymere brome sur une plaquette de silicium
FI20001664A0 (fi) Menetelmä liikenteen kontrolloimiseksi vaihtotasolla
FR2822735B1 (fr) Procede et dispositif pour la fabrication d'elements de ressorts courbes
FR2819100B1 (fr) Procede d'empilage de circuits integres
FR2795746B1 (fr) Procede de depot d'un materiau dielectrique a base de silicium sur du cuivre
FR2796963B1 (fr) Procede d'obtention de lignees isotransgeniques
FR2780915B1 (fr) Procede de fabrication d'etiquettes
AU2002246913A1 (en) Method for fabricating a semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090630