FR2772290B1 - Procede de nettoyage d'un polymere brome sur une plaquette de silicium - Google Patents

Procede de nettoyage d'un polymere brome sur une plaquette de silicium

Info

Publication number
FR2772290B1
FR2772290B1 FR9716039A FR9716039A FR2772290B1 FR 2772290 B1 FR2772290 B1 FR 2772290B1 FR 9716039 A FR9716039 A FR 9716039A FR 9716039 A FR9716039 A FR 9716039A FR 2772290 B1 FR2772290 B1 FR 2772290B1
Authority
FR
France
Prior art keywords
cleaning
silicon wafer
brominated polymer
brominated
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9716039A
Other languages
English (en)
Other versions
FR2772290A1 (fr
Inventor
Didier Severac
Michel Derie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9716039A priority Critical patent/FR2772290B1/fr
Priority to US09/209,166 priority patent/US6248179B1/en
Publication of FR2772290A1 publication Critical patent/FR2772290A1/fr
Application granted granted Critical
Publication of FR2772290B1 publication Critical patent/FR2772290B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/963—Removing process residues from vertical substrate surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
FR9716039A 1997-12-12 1997-12-12 Procede de nettoyage d'un polymere brome sur une plaquette de silicium Expired - Fee Related FR2772290B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9716039A FR2772290B1 (fr) 1997-12-12 1997-12-12 Procede de nettoyage d'un polymere brome sur une plaquette de silicium
US09/209,166 US6248179B1 (en) 1997-12-12 1998-12-10 Method of removing polymeric material on a silicon water

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9716039A FR2772290B1 (fr) 1997-12-12 1997-12-12 Procede de nettoyage d'un polymere brome sur une plaquette de silicium

Publications (2)

Publication Number Publication Date
FR2772290A1 FR2772290A1 (fr) 1999-06-18
FR2772290B1 true FR2772290B1 (fr) 2000-03-17

Family

ID=9514749

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9716039A Expired - Fee Related FR2772290B1 (fr) 1997-12-12 1997-12-12 Procede de nettoyage d'un polymere brome sur une plaquette de silicium

Country Status (2)

Country Link
US (1) US6248179B1 (fr)
FR (1) FR2772290B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4011218B2 (ja) * 1999-01-04 2007-11-21 株式会社東芝 基板処理装置及び基板処理方法
AU1604501A (en) * 1999-11-15 2001-05-30 Lucent Technologies Inc. System and method for removal of material
EP1347496A3 (fr) 2002-03-12 2006-05-03 Dainippon Screen Mfg. Co., Ltd. Dispositif et procédé de traitement de substrat
JP2008016660A (ja) * 2006-07-06 2008-01-24 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
CN111482403B (zh) * 2020-04-30 2022-06-17 张维萍 一种饱和蒸汽复合清洗方法
CN113539818B (zh) * 2021-07-16 2024-05-03 长鑫存储技术有限公司 半导体结构的制造方法及半导体器件蚀刻设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4235011A (en) * 1979-03-28 1980-11-25 Honeywell Inc. Semiconductor apparatus
MY102517A (en) * 1986-08-27 1992-07-31 Conoco Specialty Prod Cyclone separator
US5181985A (en) * 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
US5158100A (en) * 1989-05-06 1992-10-27 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method and apparatus therefor
JP2583152B2 (ja) * 1990-11-06 1997-02-19 大日本スクリーン製造株式会社 基板回転式表面処理方法
US5303671A (en) * 1992-02-07 1994-04-19 Tokyo Electron Limited System for continuously washing and film-forming a semiconductor wafer
JP3341033B2 (ja) * 1993-06-22 2002-11-05 忠弘 大見 回転薬液洗浄方法及び洗浄装置
JP3080834B2 (ja) * 1994-03-30 2000-08-28 株式会社東芝 半導体基板洗浄処理装置
KR0164007B1 (ko) * 1994-04-06 1999-02-01 이시다 아키라 미세 패턴화된 레지스트막을 가지는 기판의 건조처리방법 및 장치
JP3250090B2 (ja) * 1995-06-27 2002-01-28 東京エレクトロン株式会社 洗浄処理装置及び洗浄処理方法
US5746884A (en) * 1996-08-13 1998-05-05 Advanced Micro Devices, Inc. Fluted via formation for superior metal step coverage
US5925577A (en) * 1997-02-19 1999-07-20 Vlsi Technology, Inc. Method for forming via contact hole in a semiconductor device
US5956585A (en) * 1997-02-19 1999-09-21 Winbond Electronics Corporation Method of forming a self-aligned damage-free buried contact
US5817579A (en) * 1997-04-09 1998-10-06 Vanguard International Semiconductor Corporation Two step plasma etch method for forming self aligned contact
US5904154A (en) * 1997-07-24 1999-05-18 Vanguard International Semiconductor Corporation Method for removing fluorinated photoresist layers from semiconductor substrates
US5872061A (en) * 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers

Also Published As

Publication number Publication date
FR2772290A1 (fr) 1999-06-18
US6248179B1 (en) 2001-06-19

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ST Notification of lapse

Effective date: 20070831