FR2764734B1 - Procede de formation de plots de contact d'un dispositif a semiconducteur - Google Patents
Procede de formation de plots de contact d'un dispositif a semiconducteurInfo
- Publication number
- FR2764734B1 FR2764734B1 FR9807293A FR9807293A FR2764734B1 FR 2764734 B1 FR2764734 B1 FR 2764734B1 FR 9807293 A FR9807293 A FR 9807293A FR 9807293 A FR9807293 A FR 9807293A FR 2764734 B1 FR2764734 B1 FR 2764734B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- contact plates
- forming contact
- forming
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR19970024146 | 1997-06-11 | ||
KR1019980014850A KR100266749B1 (ko) | 1997-06-11 | 1998-04-25 | 반도체 장치의 콘택 플러그 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2764734A1 FR2764734A1 (fr) | 1998-12-18 |
FR2764734B1 true FR2764734B1 (fr) | 2002-11-08 |
Family
ID=26632828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9807293A Expired - Lifetime FR2764734B1 (fr) | 1997-06-11 | 1998-06-10 | Procede de formation de plots de contact d'un dispositif a semiconducteur |
Country Status (9)
Country | Link |
---|---|
US (1) | US6121146A (fr) |
JP (1) | JPH1131745A (fr) |
KR (1) | KR100266749B1 (fr) |
CN (1) | CN1127123C (fr) |
DE (1) | DE19826031C2 (fr) |
FR (1) | FR2764734B1 (fr) |
GB (1) | GB2326281B (fr) |
NL (1) | NL1009351C2 (fr) |
TW (1) | TW396576B (fr) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6727170B2 (en) * | 1998-02-16 | 2004-04-27 | Renesas Technology Corp. | Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof |
JPH11233621A (ja) * | 1998-02-16 | 1999-08-27 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6218306B1 (en) | 1998-04-22 | 2001-04-17 | Applied Materials, Inc. | Method of chemical mechanical polishing a metal layer |
KR100268459B1 (ko) * | 1998-05-07 | 2000-10-16 | 윤종용 | 반도체 장치의 콘택 플러그 형성 방법 |
JP2000294640A (ja) | 1999-04-09 | 2000-10-20 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
FR2795236B1 (fr) * | 1999-06-15 | 2002-06-28 | Commissariat Energie Atomique | Procede de realisation d'interconnexions notamment en cuivre pour dispositifs micro-electroniques |
US6225226B1 (en) * | 1999-12-13 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | Method for processing and integrating copper interconnects |
US6420267B1 (en) * | 2000-04-18 | 2002-07-16 | Infineon Technologies Ag | Method for forming an integrated barrier/plug for a stacked capacitor |
KR100373356B1 (ko) * | 2000-06-30 | 2003-02-25 | 주식회사 하이닉스반도체 | 반도체장치 제조방법 |
KR100399064B1 (ko) * | 2000-06-30 | 2003-09-26 | 주식회사 하이닉스반도체 | 반도체 소자 제조방법 |
DE10208714B4 (de) | 2002-02-28 | 2006-08-31 | Infineon Technologies Ag | Herstellungsverfahren für einen Kontakt für eine integrierte Schaltung |
JP4034115B2 (ja) * | 2002-05-14 | 2008-01-16 | 富士通株式会社 | 半導体装置の製造方法 |
TW519858B (en) * | 2002-05-20 | 2003-02-01 | Via Tech Inc | Printing method for manufacturing through hole and circuit of circuit board |
JP3918933B2 (ja) * | 2002-12-06 | 2007-05-23 | Jsr株式会社 | 化学機械研磨ストッパー、その製造方法および化学機械研磨方法 |
CN1315189C (zh) * | 2003-05-06 | 2007-05-09 | 旺宏电子股份有限公司 | 字符线交接点布局结构 |
US6909131B2 (en) * | 2003-05-30 | 2005-06-21 | Macronix International Co., Ltd. | Word line strap layout structure |
DE102006030265B4 (de) * | 2006-06-30 | 2014-01-30 | Globalfoundries Inc. | Verfahren zum Verbessern der Planarität einer Oberflächentopographie in einer Mikrostruktur |
KR100955838B1 (ko) | 2007-12-28 | 2010-05-06 | 주식회사 동부하이텍 | 반도체 소자 및 그 배선 제조 방법 |
DE102010028460B4 (de) | 2010-04-30 | 2014-01-23 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zum Herstellen eines Halbleiterbauelements mit einer reduzierten Defektrate in Kontakten, das Austauschgateelektrodenstrukturen unter Anwendung einer Zwischendeckschicht aufweist |
CN103160781B (zh) * | 2011-12-16 | 2015-07-01 | 中国科学院兰州化学物理研究所 | 模具钢表面多层梯度纳米复合类金刚石薄膜的制备方法 |
CN104233222B (zh) * | 2014-09-26 | 2016-06-29 | 厦门大学 | 一种直接在Si衬底上生长六方氮化硼二维薄膜的方法 |
KR102406583B1 (ko) * | 2017-07-12 | 2022-06-09 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1989000503A1 (fr) * | 1987-07-21 | 1989-01-26 | Storage Technology Corporation | Commande des fonctions d'imprimantes par identification de bande |
JPH0682660B2 (ja) * | 1987-08-17 | 1994-10-19 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 導電性スタツドを形成する方法 |
US4879257A (en) * | 1987-11-18 | 1989-11-07 | Lsi Logic Corporation | Planarization process |
US5094972A (en) * | 1990-06-14 | 1992-03-10 | National Semiconductor Corp. | Means of planarizing integrated circuits with fully recessed isolation dielectric |
US5124780A (en) * | 1991-06-10 | 1992-06-23 | Micron Technology, Inc. | Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization |
US5246884A (en) * | 1991-10-30 | 1993-09-21 | International Business Machines Corporation | Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop |
US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
DE4311484A1 (de) * | 1992-04-09 | 1993-10-14 | Micron Technology Inc | Verfahren zur Bildung einer leitfähigen Struktur auf der Oberfläche eines Substrats |
US5356513A (en) * | 1993-04-22 | 1994-10-18 | International Business Machines Corporation | Polishstop planarization method and structure |
EP0660393B1 (fr) * | 1993-12-23 | 2000-05-10 | STMicroelectronics, Inc. | Méthode et structure de diélectrique pour faciliter la surgravure de métal sans endommager le diélectrique intermédiaire |
JPH07221292A (ja) * | 1994-02-04 | 1995-08-18 | Citizen Watch Co Ltd | 半導体装置およびその製造方法 |
US5573633A (en) * | 1995-11-14 | 1996-11-12 | International Business Machines Corporation | Method of chemically mechanically polishing an electronic component |
US5885899A (en) * | 1995-11-14 | 1999-03-23 | International Business Machines Corporation | Method of chemically mechanically polishing an electronic component using a non-selective ammonium hydroxide slurry |
US5773314A (en) * | 1997-04-25 | 1998-06-30 | Motorola, Inc. | Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells |
US5915189A (en) * | 1997-08-22 | 1999-06-22 | Samsung Electronics Co., Ltd. | Manufacturing method for semiconductor memory device having a storage node with surface irregularities |
-
1998
- 1998-04-25 KR KR1019980014850A patent/KR100266749B1/ko not_active IP Right Cessation
- 1998-06-03 TW TW087108698A patent/TW396576B/zh not_active IP Right Cessation
- 1998-06-05 US US09/092,021 patent/US6121146A/en not_active Expired - Lifetime
- 1998-06-09 NL NL1009351A patent/NL1009351C2/nl not_active IP Right Cessation
- 1998-06-10 FR FR9807293A patent/FR2764734B1/fr not_active Expired - Lifetime
- 1998-06-10 DE DE19826031A patent/DE19826031C2/de not_active Expired - Lifetime
- 1998-06-11 CN CN98102092A patent/CN1127123C/zh not_active Expired - Lifetime
- 1998-06-11 GB GB9812552A patent/GB2326281B/en not_active Expired - Lifetime
- 1998-06-11 JP JP10163107A patent/JPH1131745A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL1009351C2 (nl) | 2000-02-23 |
JPH1131745A (ja) | 1999-02-02 |
FR2764734A1 (fr) | 1998-12-18 |
DE19826031A1 (de) | 1998-12-17 |
GB2326281B (en) | 2000-07-12 |
US6121146A (en) | 2000-09-19 |
CN1127123C (zh) | 2003-11-05 |
DE19826031C2 (de) | 2002-12-05 |
KR100266749B1 (ko) | 2000-09-15 |
NL1009351A1 (nl) | 1998-12-14 |
GB2326281A (en) | 1998-12-16 |
GB9812552D0 (en) | 1998-08-05 |
KR19990006403A (ko) | 1999-01-25 |
CN1203444A (zh) | 1998-12-30 |
TW396576B (en) | 2000-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 19 |
|
PLFP | Fee payment |
Year of fee payment: 20 |