KR100807518B1 - 온도 보상형 강유전성 커패시터 장치 및 그 제조 - Google Patents

온도 보상형 강유전성 커패시터 장치 및 그 제조 Download PDF

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Publication number
KR100807518B1
KR100807518B1 KR1020057005250A KR20057005250A KR100807518B1 KR 100807518 B1 KR100807518 B1 KR 100807518B1 KR 1020057005250 A KR1020057005250 A KR 1020057005250A KR 20057005250 A KR20057005250 A KR 20057005250A KR 100807518 B1 KR100807518 B1 KR 100807518B1
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ferroelectric
capacitor
temperature
layer
temperature compensated
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KR20050070009A (ko
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토마스 케이. 도우허티
존 제이. 드랩
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레이던 컴퍼니
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

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  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020057005250A 2002-09-26 2003-09-19 온도 보상형 강유전성 커패시터 장치 및 그 제조 Expired - Fee Related KR100807518B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/256,446 US20040061990A1 (en) 2002-09-26 2002-09-26 Temperature-compensated ferroelectric capacitor device, and its fabrication
US10/256,446 2002-09-26

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Publication Number Publication Date
KR20050070009A KR20050070009A (ko) 2005-07-05
KR100807518B1 true KR100807518B1 (ko) 2008-02-26

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US (2) US20040061990A1 (enExample)
JP (1) JP4638232B2 (enExample)
KR (1) KR100807518B1 (enExample)
TW (1) TWI239541B (enExample)
WO (1) WO2004030100A1 (enExample)

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JP5259940B2 (ja) * 2005-09-05 2013-08-07 日東電工株式会社 粘着剤組成物、粘着シートおよび表面保護フィルム
US20070132065A1 (en) * 2005-12-08 2007-06-14 Su Jae Lee Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same
KR20100089820A (ko) * 2007-12-06 2010-08-12 인터실 아메리카스 인코포레이티드 직류/직류 전압 조정기의 인덕터 전류 검출 정확도를 향상시키기 위한 시스템 및 방법
JP5766011B2 (ja) * 2011-05-06 2015-08-19 京セラ株式会社 静電容量素子
US10139288B2 (en) 2013-09-25 2018-11-27 3M Innovative Properties Company Compositions, apparatus and methods for capacitive temperature sensing
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
WO2022230432A1 (ja) * 2021-04-28 2022-11-03 パナソニックＩｐマネジメント株式会社 誘電体、キャパシタ、電気回路、回路基板、及び機器
CN113314346A (zh) * 2021-06-07 2021-08-27 通号(北京)轨道工业集团有限公司轨道交通技术研究院 一种变容电容器
US11990470B2 (en) * 2021-09-24 2024-05-21 International Business Machines Corporation Ferroelectric and paraelectric stack capacitors
JP7682759B2 (ja) * 2021-09-30 2025-05-26 Tdk株式会社 薄膜キャパシタ、電源モジュールおよび電子機器

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US5218512A (en) * 1991-08-16 1993-06-08 Rohm Co., Ltd. Ferroelectric device
US5572052A (en) * 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer

Also Published As

Publication number Publication date
TW200414243A (en) 2004-08-01
US20040061990A1 (en) 2004-04-01
TWI239541B (en) 2005-09-11
US8053251B2 (en) 2011-11-08
JP2006500785A (ja) 2006-01-05
KR20050070009A (ko) 2005-07-05
US20060189003A1 (en) 2006-08-24
JP4638232B2 (ja) 2011-02-23
WO2004030100A1 (en) 2004-04-08

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