KR20050070009A - 온도 보상 강유전성 커패시터 장치 및 그 제조 - Google Patents
온도 보상 강유전성 커패시터 장치 및 그 제조 Download PDFInfo
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- KR20050070009A KR20050070009A KR1020057005250A KR20057005250A KR20050070009A KR 20050070009 A KR20050070009 A KR 20050070009A KR 1020057005250 A KR1020057005250 A KR 1020057005250A KR 20057005250 A KR20057005250 A KR 20057005250A KR 20050070009 A KR20050070009 A KR 20050070009A
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- Prior art keywords
- ferroelectric
- capacitor
- layer
- negative temperature
- temperature
- Prior art date
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- 239000003990 capacitor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims abstract description 73
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 13
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 13
- 239000002243 precursor Substances 0.000 claims description 22
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 4
- UDRRLPGVCZOTQW-UHFFFAOYSA-N bismuth lead Chemical compound [Pb].[Bi] UDRRLPGVCZOTQW-UHFFFAOYSA-N 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 3
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 10
- 238000013459 approach Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000015654 memory Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical class [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical class [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical class [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Chemical class 0.000 description 2
- 239000010955 niobium Chemical class 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical class [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical class [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Chemical class 0.000 description 2
- 229910052719 titanium Chemical class 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- DJOYTAUERRJRAT-UHFFFAOYSA-N 2-(n-methyl-4-nitroanilino)acetonitrile Chemical compound N#CCN(C)C1=CC=C([N+]([O-])=O)C=C1 DJOYTAUERRJRAT-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- HNQGTZYKXIXXST-UHFFFAOYSA-N calcium;dioxido(oxo)tin Chemical compound [Ca+2].[O-][Sn]([O-])=O HNQGTZYKXIXXST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (12)
- 강유전성 특성을 갖는 온도 보상 커패시터 장치(20)로서,강유전성 재료를 포함하는 강유전성 커패시터(22);음의 온도 계수의 커패시턴스 재료를 포함하는 음의 온도 가변 커패시터(24); 및상기 음의 온도 가변 커패시터(24)와 상기 강유전성 커패시터(22) 사이의 전기적 직렬 접속(26)을 포함하는 온도 보상 커패시터 장치.
- 제1항에 있어서,상기 전기적 직렬 접속(26)은 상기 강유전성 커패시터(22)와 상기 음의 온도 가변 커페시터(24) 사이에 직접 물리적인 접촉을 갖는 온도 보상 커패시터 장치.
- 제1항 또는 제2항에 있어서,상기 강유전성 재료는 강유전성층(28)을 포함하고, 상기 음의 온도 계수의 커패시턴스 재료는 상기 강유전성층(28)과 직접 대향하여 접촉하는 상유전성층(32)을 포함하는 온도 보상 커패시터 장치.
- 제1항에 있어서,상기 전기적 직렬 접속(26)은 상기 강유전성 커패시터(22)와 상기 음의 온도 가변 커패시터(24) 사이에 연장하는 분리된 전기적 접속을 포함하는 온도 보상 커패시터 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 강유전성 재료는 금속 산화물 강유전성 재료인 온도 보상 커패시터 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 강유전성 재료는 리드 티타네이트, 리드 지르코네이트 티타네이트, 리드 란타늄 지르코네이트 티타네이트, 바륨 티타네이트, 스트론튬 비스무스 탄탈레이트, 스트론튬 비스무스 니오베이트, 스트론튬 비스무스 탄탈레이트 니오베이트, 및 비스무스 리드 티타네이트로 이루어지는 그룹으로부터 선택된 금속 산화물 강유전성 재료인 온도 보상 커패시터 장치.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 음의 온도 계수의 커패시턴스 재료는 상유전성 재료인 온도 보상 커패시터 장치.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 음의 온도 계수의 커패시턴스 재료는 금속 산화물 음의 온도 계수의 커패시턴스 재료인 온도 보상 커패시터 장치.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 음의 온도 계수의 커패시턴스 재료는 스트론튬 티타네이트 및 바륨 스트론튬 티타네이트로 이루어진 그룹으로부터 선택된 금속 산화물 음의 온도 계수의 커패시턴스 재료인 온도 보상 커패시터 장치.
- 강유전성 특성을 갖는 온도 보상 커패시터를 제조하는 방법으로서,제1 전극층(38)을 제작하는 단계;상기 제1 전극층(38) 상에 강유전성 전구체 재료의 강유전성 전구체층을 퇴적하는 단계;상기 강유전성 전구체층을 반응시켜서 강유전성층(28)을 생성하는 단계;상기 강유전성층(28) 상에 음의 온도 계수의 커패시턴스 재료의 음의 온도 가변 전구체층을 퇴적하는 단계;상기 음의 온도 가변 전구체층을 반응시켜서 상유전성층(32)을 형성하는 단계; 및상기 상유전성층(32) 상에 제2 전극을 배치하는 단계를 포함하는 온도 보상 커패시터 제조 방법.
- 제10항에 있어서,상기 강유전성 전구체층을 퇴적하는 단계는 금속 산화물 강유전성 재료의 전구체를 퇴적하는 단계를 포함하는 온도 보상 커패시터 제조 방법.
- 제10항 또는 제11항에 있어서,상기 온도 가변 전구체층을 퇴적하는 단계는 금속 산화물 음의 온도 계수의 커패시턴스 재료의 전구체를 퇴적하는 단계를 포함하는 온도 보상 커패시터 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/256,446 | 2002-09-26 | ||
US10/256,446 US20040061990A1 (en) | 2002-09-26 | 2002-09-26 | Temperature-compensated ferroelectric capacitor device, and its fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050070009A true KR20050070009A (ko) | 2005-07-05 |
KR100807518B1 KR100807518B1 (ko) | 2008-02-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020057005250A KR100807518B1 (ko) | 2002-09-26 | 2003-09-19 | 온도 보상형 강유전성 커패시터 장치 및 그 제조 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20040061990A1 (ko) |
JP (1) | JP4638232B2 (ko) |
KR (1) | KR100807518B1 (ko) |
TW (1) | TWI239541B (ko) |
WO (1) | WO2004030100A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040175585A1 (en) * | 2003-03-05 | 2004-09-09 | Qin Zou | Barium strontium titanate containing multilayer structures on metal foils |
JP5259940B2 (ja) * | 2005-09-05 | 2013-08-07 | 日東電工株式会社 | 粘着剤組成物、粘着シートおよび表面保護フィルム |
US20070132065A1 (en) * | 2005-12-08 | 2007-06-14 | Su Jae Lee | Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same |
TW200941907A (en) * | 2007-12-06 | 2009-10-01 | Intersil Inc | System and method for improving inductor current sensing accuracy of a DC/DC voltage regulator |
JP5766011B2 (ja) * | 2011-05-06 | 2015-08-19 | 京セラ株式会社 | 静電容量素子 |
US10139288B2 (en) | 2013-09-25 | 2018-11-27 | 3M Innovative Properties Company | Compositions, apparatus and methods for capacitive temperature sensing |
US10122357B2 (en) * | 2016-11-14 | 2018-11-06 | Ford Global Technologies, Llc | Sensorless temperature compensation for power switching devices |
CN117223075A (zh) * | 2021-04-28 | 2023-12-12 | 松下知识产权经营株式会社 | 电介质、电容器、电气电路、电路基板及设备 |
CN113314346A (zh) * | 2021-06-07 | 2021-08-27 | 通号(北京)轨道工业集团有限公司轨道交通技术研究院 | 一种变容电容器 |
US11990470B2 (en) * | 2021-09-24 | 2024-05-21 | International Business Machines Corporation | Ferroelectric and paraelectric stack capacitors |
JP2023051426A (ja) * | 2021-09-30 | 2023-04-11 | Tdk株式会社 | 薄膜キャパシタ、電源モジュールおよび電子機器 |
Family Cites Families (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3305394A (en) * | 1964-06-30 | 1967-02-21 | Ibm | Method of making a capacitor with a multilayered ferroelectric dielectric |
US3549415A (en) * | 1968-07-15 | 1970-12-22 | Zenith Radio Corp | Method of making multilayer ceramic capacitors |
JPS4865446A (ko) * | 1971-12-17 | 1973-09-08 | ||
US4195326A (en) * | 1977-09-12 | 1980-03-25 | Beckman Instruments, Inc. | Predetermined temperature coefficient capacitor |
JPS5498958A (en) * | 1978-01-20 | 1979-08-04 | Hitachi Ltd | Temperature compensation thick film condenser |
US4441067A (en) * | 1980-10-20 | 1984-04-03 | Hare Louis R O | Thermal dielectric electric power generator |
US4396721A (en) * | 1981-08-05 | 1983-08-02 | Lawless William N | Glass ceramic materials having controllable temperature coefficients of dielectric constant |
JPS62222512A (ja) * | 1986-03-20 | 1987-09-30 | キヤノン株式会社 | 誘電体材料 |
US4853893A (en) * | 1987-07-02 | 1989-08-01 | Ramtron Corporation | Data storage device and method of using a ferroelectric capacitance divider |
JPH0648666B2 (ja) * | 1987-09-29 | 1994-06-22 | 三菱マテリアル株式会社 | 積層セラミックコンデンサ及びその製法 |
JPH0770618B2 (ja) * | 1989-05-22 | 1995-07-31 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
US5005102A (en) * | 1989-06-20 | 1991-04-02 | Ramtron Corporation | Multilayer electrodes for integrated circuit capacitors |
JP2759689B2 (ja) * | 1989-11-24 | 1998-05-28 | 松下電器産業株式会社 | Ramの読み出し回路 |
JPH03252160A (ja) * | 1990-02-28 | 1991-11-11 | Nec Corp | コンデンサ、コンデンサネットワーク及び抵抗―コンデンサネットワーク |
US5218512A (en) * | 1991-08-16 | 1993-06-08 | Rohm Co., Ltd. | Ferroelectric device |
US5206788A (en) * | 1991-12-12 | 1993-04-27 | Ramtron Corporation | Series ferroelectric capacitor structure for monolithic integrated circuits and method |
US5572052A (en) * | 1992-07-24 | 1996-11-05 | Mitsubishi Denki Kabushiki Kaisha | Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer |
US5471364A (en) * | 1993-03-31 | 1995-11-28 | Texas Instruments Incorporated | Electrode interface for high-dielectric-constant materials |
JPH06302179A (ja) * | 1993-04-13 | 1994-10-28 | Casio Comput Co Ltd | 電子機器 |
US5487030A (en) * | 1994-08-26 | 1996-01-23 | Hughes Aircraft Company | Ferroelectric interruptible read memory |
US5729488A (en) * | 1994-08-26 | 1998-03-17 | Hughes Electronics | Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect |
JPH08153854A (ja) * | 1994-09-29 | 1996-06-11 | Olympus Optical Co Ltd | 強誘電体薄膜キャパシタの製造方法 |
JP3590115B2 (ja) * | 1994-12-20 | 2004-11-17 | 株式会社日立製作所 | 半導体メモリ |
US5638252A (en) * | 1995-06-14 | 1997-06-10 | Hughes Aircraft Company | Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor |
ATE220228T1 (de) * | 1995-08-09 | 2002-07-15 | Infineon Technologies Ag | Integrierte halbleiter-speichervorrichtung mit redundanzschaltungsanordnung |
US5552355A (en) * | 1995-10-03 | 1996-09-03 | At&T Corp. | Compensation of the temperature coefficient of the dielectric constant of barium strontium titanate |
JP2800745B2 (ja) * | 1995-11-10 | 1998-09-21 | 日本電気株式会社 | 強誘電体メモリ |
US5889299A (en) * | 1996-02-22 | 1999-03-30 | Kabushiki Kaisha Toshiba | Thin film capacitor |
US5955755A (en) * | 1996-03-25 | 1999-09-21 | Asahi Kasei Kogyo Kabushiki Kaisha | Semiconductor storage device and method for manufacturing the same |
US5885648A (en) * | 1996-04-19 | 1999-03-23 | Raytheon Company | Process for making stoichiometric mixed metal oxide films |
JPH09321237A (ja) * | 1996-05-28 | 1997-12-12 | Toshiba Corp | 強誘電体膜を有する不揮発性半導体記憶装置及び強誘電体膜を有するキャパシタ及びその製造方法 |
US5695815A (en) * | 1996-05-29 | 1997-12-09 | Micron Technology, Inc. | Metal carboxylate complexes for formation of metal-containing films on semiconductor devices |
US5721009A (en) * | 1996-06-24 | 1998-02-24 | He Holdings, Inc. | Controlled carbon content MOD precursor materials using organic acid anhydride |
US5877977A (en) * | 1996-09-10 | 1999-03-02 | National Semiconductor Corporation | Nonvolatile memory based on metal-ferroelectric-metal-insulator semiconductor structure |
US6340621B1 (en) * | 1996-10-30 | 2002-01-22 | The Research Foundation Of State University Of New York | Thin film capacitor and method of manufacture |
US5966318A (en) * | 1996-12-17 | 1999-10-12 | Raytheon Company | Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers |
US5784310A (en) * | 1997-03-03 | 1998-07-21 | Symetrix Corporation | Low imprint ferroelectric material for long retention memory and method of making the same |
US5908658A (en) * | 1997-07-22 | 1999-06-01 | Raytheon Company | Process for forming thin film metal oxide materials having improved electrical properties |
US6127192A (en) * | 1998-08-27 | 2000-10-03 | Micron Technology, Inc. | Complexes having tris (pyrazolyl) borate ligands for forming films |
US6172385B1 (en) * | 1998-10-30 | 2001-01-09 | International Business Machines Corporation | Multilayer ferroelectric capacitor structure |
JP2000232206A (ja) * | 1999-02-09 | 2000-08-22 | Oki Electric Ind Co Ltd | 強誘電体メモリ |
JP2001015381A (ja) * | 1999-06-28 | 2001-01-19 | Hokuriku Electric Ind Co Ltd | 表面実装型複合電子部品とその製造方法 |
JP2001031472A (ja) * | 1999-07-21 | 2001-02-06 | Tdk Corp | 誘電体組成物およびこれを用いたセラミックコンデンサ |
JP2001189430A (ja) * | 1999-12-28 | 2001-07-10 | Toshiba Corp | 強誘電体キャパシタ |
JP2001298162A (ja) * | 2000-04-12 | 2001-10-26 | Sony Corp | 不揮発性半導体記憶装置 |
JP2002075783A (ja) * | 2000-08-25 | 2002-03-15 | Alps Electric Co Ltd | 温度補償用薄膜コンデンサ |
JP2002217381A (ja) * | 2000-11-20 | 2002-08-02 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JP2002252143A (ja) * | 2000-12-21 | 2002-09-06 | Alps Electric Co Ltd | 温度補償用薄膜コンデンサ及び電子機器 |
US6603033B2 (en) * | 2001-01-19 | 2003-08-05 | Korea Institute Of Science And Technology | Organotitanium precursors for chemical vapor deposition and manufacturing method thereof |
JP2002289462A (ja) * | 2001-03-27 | 2002-10-04 | Alps Electric Co Ltd | 薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路 |
WO2002086905A2 (en) * | 2001-04-19 | 2002-10-31 | Sanyo Electric Co., Ltd. | Ferroelectric memory and operating method therefor |
JP2003060054A (ja) * | 2001-08-10 | 2003-02-28 | Rohm Co Ltd | 強誘電体キャパシタを有する半導体装置 |
-
2002
- 2002-09-26 US US10/256,446 patent/US20040061990A1/en not_active Abandoned
-
2003
- 2003-09-19 JP JP2004540141A patent/JP4638232B2/ja not_active Expired - Lifetime
- 2003-09-19 WO PCT/US2003/029709 patent/WO2004030100A1/en active Application Filing
- 2003-09-19 KR KR1020057005250A patent/KR100807518B1/ko active IP Right Grant
- 2003-09-25 TW TW092126675A patent/TWI239541B/zh not_active IP Right Cessation
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2005
- 2005-08-19 US US11/207,925 patent/US8053251B2/en active Active
Also Published As
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JP4638232B2 (ja) | 2011-02-23 |
US20060189003A1 (en) | 2006-08-24 |
JP2006500785A (ja) | 2006-01-05 |
WO2004030100A1 (en) | 2004-04-08 |
US8053251B2 (en) | 2011-11-08 |
US20040061990A1 (en) | 2004-04-01 |
KR100807518B1 (ko) | 2008-02-26 |
TW200414243A (en) | 2004-08-01 |
TWI239541B (en) | 2005-09-11 |
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