TWI239541B - Temperature-compensated ferroelectric capacitor device, and its fabrication - Google Patents

Temperature-compensated ferroelectric capacitor device, and its fabrication Download PDF

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Publication number
TWI239541B
TWI239541B TW092126675A TW92126675A TWI239541B TW I239541 B TWI239541 B TW I239541B TW 092126675 A TW092126675 A TW 092126675A TW 92126675 A TW92126675 A TW 92126675A TW I239541 B TWI239541 B TW I239541B
Authority
TW
Taiwan
Prior art keywords
ferroelectric
temperature
capacitor
layer
negative temperature
Prior art date
Application number
TW092126675A
Other languages
English (en)
Chinese (zh)
Other versions
TW200414243A (en
Inventor
Thomas K Dougherty
John J Drab
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of TW200414243A publication Critical patent/TW200414243A/zh
Application granted granted Critical
Publication of TWI239541B publication Critical patent/TWI239541B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW092126675A 2002-09-26 2003-09-25 Temperature-compensated ferroelectric capacitor device, and its fabrication TWI239541B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/256,446 US20040061990A1 (en) 2002-09-26 2002-09-26 Temperature-compensated ferroelectric capacitor device, and its fabrication

Publications (2)

Publication Number Publication Date
TW200414243A TW200414243A (en) 2004-08-01
TWI239541B true TWI239541B (en) 2005-09-11

Family

ID=32029278

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126675A TWI239541B (en) 2002-09-26 2003-09-25 Temperature-compensated ferroelectric capacitor device, and its fabrication

Country Status (5)

Country Link
US (2) US20040061990A1 (enExample)
JP (1) JP4638232B2 (enExample)
KR (1) KR100807518B1 (enExample)
TW (1) TWI239541B (enExample)
WO (1) WO2004030100A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040175585A1 (en) * 2003-03-05 2004-09-09 Qin Zou Barium strontium titanate containing multilayer structures on metal foils
JP5259940B2 (ja) * 2005-09-05 2013-08-07 日東電工株式会社 粘着剤組成物、粘着シートおよび表面保護フィルム
US20070132065A1 (en) * 2005-12-08 2007-06-14 Su Jae Lee Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same
KR20100089820A (ko) * 2007-12-06 2010-08-12 인터실 아메리카스 인코포레이티드 직류/직류 전압 조정기의 인덕터 전류 검출 정확도를 향상시키기 위한 시스템 및 방법
JP5766011B2 (ja) * 2011-05-06 2015-08-19 京セラ株式会社 静電容量素子
US10139288B2 (en) 2013-09-25 2018-11-27 3M Innovative Properties Company Compositions, apparatus and methods for capacitive temperature sensing
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
WO2022230432A1 (ja) * 2021-04-28 2022-11-03 パナソニックＩｐマネジメント株式会社 誘電体、キャパシタ、電気回路、回路基板、及び機器
CN113314346A (zh) * 2021-06-07 2021-08-27 通号(北京)轨道工业集团有限公司轨道交通技术研究院 一种变容电容器
US11990470B2 (en) * 2021-09-24 2024-05-21 International Business Machines Corporation Ferroelectric and paraelectric stack capacitors
JP7682759B2 (ja) * 2021-09-30 2025-05-26 Tdk株式会社 薄膜キャパシタ、電源モジュールおよび電子機器

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305394A (en) * 1964-06-30 1967-02-21 Ibm Method of making a capacitor with a multilayered ferroelectric dielectric
US3549415A (en) * 1968-07-15 1970-12-22 Zenith Radio Corp Method of making multilayer ceramic capacitors
JPS4865446A (enExample) * 1971-12-17 1973-09-08
US4195326A (en) * 1977-09-12 1980-03-25 Beckman Instruments, Inc. Predetermined temperature coefficient capacitor
JPS5498958A (en) * 1978-01-20 1979-08-04 Hitachi Ltd Temperature compensation thick film condenser
US4441067A (en) * 1980-10-20 1984-04-03 Hare Louis R O Thermal dielectric electric power generator
US4396721A (en) * 1981-08-05 1983-08-02 Lawless William N Glass ceramic materials having controllable temperature coefficients of dielectric constant
JPS62222512A (ja) * 1986-03-20 1987-09-30 キヤノン株式会社 誘電体材料
US4853893A (en) * 1987-07-02 1989-08-01 Ramtron Corporation Data storage device and method of using a ferroelectric capacitance divider
JPH0648666B2 (ja) * 1987-09-29 1994-06-22 三菱マテリアル株式会社 積層セラミックコンデンサ及びその製法
JPH0770618B2 (ja) * 1989-05-22 1995-07-31 三菱電機株式会社 半導体記憶装置およびその製造方法
US5005102A (en) * 1989-06-20 1991-04-02 Ramtron Corporation Multilayer electrodes for integrated circuit capacitors
JP2759689B2 (ja) * 1989-11-24 1998-05-28 松下電器産業株式会社 Ｒａｍの読み出し回路
JPH03252160A (ja) * 1990-02-28 1991-11-11 Nec Corp コンデンサ、コンデンサネットワーク及び抵抗―コンデンサネットワーク
US5218512A (en) * 1991-08-16 1993-06-08 Rohm Co., Ltd. Ferroelectric device
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5572052A (en) * 1992-07-24 1996-11-05 Mitsubishi Denki Kabushiki Kaisha Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer
US5471364A (en) * 1993-03-31 1995-11-28 Texas Instruments Incorporated Electrode interface for high-dielectric-constant materials
JPH06302179A (ja) * 1993-04-13 1994-10-28 Casio Comput Co Ltd 電子機器
US5487030A (en) * 1994-08-26 1996-01-23 Hughes Aircraft Company Ferroelectric interruptible read memory
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
JPH08153854A (ja) * 1994-09-29 1996-06-11 Olympus Optical Co Ltd 強誘電体薄膜キャパシタの製造方法
JP3590115B2 (ja) * 1994-12-20 2004-11-17 株式会社日立製作所 半導体メモリ
US5638252A (en) * 1995-06-14 1997-06-10 Hughes Aircraft Company Electrical device and method utilizing a positive-temperature-coefficient ferroelectric capacitor
DE59510258D1 (de) * 1995-08-09 2002-08-08 Infineon Technologies Ag Integrierte Halbleiter-Speichervorrichtung mit Redundanzschaltungsanordnung
US5552355A (en) * 1995-10-03 1996-09-03 At&T Corp. Compensation of the temperature coefficient of the dielectric constant of barium strontium titanate
JP2800745B2 (ja) * 1995-11-10 1998-09-21 日本電気株式会社 強誘電体メモリ
KR100228038B1 (ko) * 1996-02-22 1999-11-01 니시무로 타이죠 박막캐패시터
US5955755A (en) * 1996-03-25 1999-09-21 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor storage device and method for manufacturing the same
US5885648A (en) * 1996-04-19 1999-03-23 Raytheon Company Process for making stoichiometric mixed metal oxide films
JPH09321237A (ja) * 1996-05-28 1997-12-12 Toshiba Corp 強誘電体膜を有する不揮発性半導体記憶装置及び強誘電体膜を有するキャパシタ及びその製造方法
US5695815A (en) * 1996-05-29 1997-12-09 Micron Technology, Inc. Metal carboxylate complexes for formation of metal-containing films on semiconductor devices
US5721009A (en) * 1996-06-24 1998-02-24 He Holdings, Inc. Controlled carbon content MOD precursor materials using organic acid anhydride
US5877977A (en) * 1996-09-10 1999-03-02 National Semiconductor Corporation Nonvolatile memory based on metal-ferroelectric-metal-insulator semiconductor structure
US6340621B1 (en) * 1996-10-30 2002-01-22 The Research Foundation Of State University Of New York Thin film capacitor and method of manufacture
US5966318A (en) * 1996-12-17 1999-10-12 Raytheon Company Nondestructive readout memory utilizing ferroelectric capacitors isolated from bitlines by buffer amplifiers
US5784310A (en) * 1997-03-03 1998-07-21 Symetrix Corporation Low imprint ferroelectric material for long retention memory and method of making the same
US5908658A (en) * 1997-07-22 1999-06-01 Raytheon Company Process for forming thin film metal oxide materials having improved electrical properties
US6127192A (en) * 1998-08-27 2000-10-03 Micron Technology, Inc. Complexes having tris (pyrazolyl) borate ligands for forming films
US6172385B1 (en) * 1998-10-30 2001-01-09 International Business Machines Corporation Multilayer ferroelectric capacitor structure
JP2000232206A (ja) * 1999-02-09 2000-08-22 Oki Electric Ind Co Ltd 強誘電体メモリ
JP2001015381A (ja) * 1999-06-28 2001-01-19 Hokuriku Electric Ind Co Ltd 表面実装型複合電子部品とその製造方法
JP2001031472A (ja) * 1999-07-21 2001-02-06 Tdk Corp 誘電体組成物およびこれを用いたセラミックコンデンサ
JP2001189430A (ja) * 1999-12-28 2001-07-10 Toshiba Corp 強誘電体キャパシタ
JP2001298162A (ja) * 2000-04-12 2001-10-26 Sony Corp 不揮発性半導体記憶装置
JP2002075783A (ja) * 2000-08-25 2002-03-15 Alps Electric Co Ltd 温度補償用薄膜コンデンサ
JP2002217381A (ja) * 2000-11-20 2002-08-02 Toshiba Corp 半導体記憶装置及びその製造方法
JP2002252143A (ja) * 2000-12-21 2002-09-06 Alps Electric Co Ltd 温度補償用薄膜コンデンサ及び電子機器
KR100435816B1 (ko) * 2001-01-19 2004-06-12 한국과학기술연구원 화학증착용 유기티탄 전구체 및 그의 제조 방법
JP2002289462A (ja) * 2001-03-27 2002-10-04 Alps Electric Co Ltd 薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路
CN100433183C (zh) * 2001-04-19 2008-11-12 三洋电机株式会社 铁电存储器及其电压施加方法
JP2003060054A (ja) * 2001-08-10 2003-02-28 Rohm Co Ltd 強誘電体キャパシタを有する半導体装置

Also Published As

Publication number Publication date
TW200414243A (en) 2004-08-01
US20040061990A1 (en) 2004-04-01
KR100807518B1 (ko) 2008-02-26
US8053251B2 (en) 2011-11-08
JP2006500785A (ja) 2006-01-05
KR20050070009A (ko) 2005-07-05
US20060189003A1 (en) 2006-08-24
JP4638232B2 (ja) 2011-02-23
WO2004030100A1 (en) 2004-04-08

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