JP4638232B2 - 温度補償された強誘電キャパシタ装置およびその製造方法 - Google Patents

温度補償された強誘電キャパシタ装置およびその製造方法 Download PDF

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JP4638232B2
JP4638232B2 JP2004540141A JP2004540141A JP4638232B2 JP 4638232 B2 JP4638232 B2 JP 4638232B2 JP 2004540141 A JP2004540141 A JP 2004540141A JP 2004540141 A JP2004540141 A JP 2004540141A JP 4638232 B2 JP4638232 B2 JP 4638232B2
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ferroelectric
layer
capacitor
temperature
paraelectric
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JP2006500785A (ja
JP2006500785A5 (enExample
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ドハーティー、ティー・カーク
ドラブ、ジョン・ジェイ
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Raytheon Co
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Raytheon Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

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  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004540141A 2002-09-26 2003-09-19 温度補償された強誘電キャパシタ装置およびその製造方法 Expired - Lifetime JP4638232B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/256,446 US20040061990A1 (en) 2002-09-26 2002-09-26 Temperature-compensated ferroelectric capacitor device, and its fabrication
PCT/US2003/029709 WO2004030100A1 (en) 2002-09-26 2003-09-19 Temperature-compensated ferroelectric capacitor device, and its fabrication

Publications (3)

Publication Number Publication Date
JP2006500785A JP2006500785A (ja) 2006-01-05
JP2006500785A5 JP2006500785A5 (enExample) 2006-10-12
JP4638232B2 true JP4638232B2 (ja) 2011-02-23

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JP2004540141A Expired - Lifetime JP4638232B2 (ja) 2002-09-26 2003-09-19 温度補償された強誘電キャパシタ装置およびその製造方法

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US (2) US20040061990A1 (enExample)
JP (1) JP4638232B2 (enExample)
KR (1) KR100807518B1 (enExample)
TW (1) TWI239541B (enExample)
WO (1) WO2004030100A1 (enExample)

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KR20100089820A (ko) * 2007-12-06 2010-08-12 인터실 아메리카스 인코포레이티드 직류/직류 전압 조정기의 인덕터 전류 검출 정확도를 향상시키기 위한 시스템 및 방법
JP5766011B2 (ja) * 2011-05-06 2015-08-19 京セラ株式会社 静電容量素子
US10139288B2 (en) 2013-09-25 2018-11-27 3M Innovative Properties Company Compositions, apparatus and methods for capacitive temperature sensing
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
WO2022230432A1 (ja) * 2021-04-28 2022-11-03 パナソニックＩｐマネジメント株式会社 誘電体、キャパシタ、電気回路、回路基板、及び機器
CN113314346A (zh) * 2021-06-07 2021-08-27 通号(北京)轨道工业集团有限公司轨道交通技术研究院 一种变容电容器
US11990470B2 (en) * 2021-09-24 2024-05-21 International Business Machines Corporation Ferroelectric and paraelectric stack capacitors
JP7682759B2 (ja) * 2021-09-30 2025-05-26 Tdk株式会社 薄膜キャパシタ、電源モジュールおよび電子機器

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Also Published As

Publication number Publication date
TW200414243A (en) 2004-08-01
US20040061990A1 (en) 2004-04-01
TWI239541B (en) 2005-09-11
KR100807518B1 (ko) 2008-02-26
US8053251B2 (en) 2011-11-08
JP2006500785A (ja) 2006-01-05
KR20050070009A (ko) 2005-07-05
US20060189003A1 (en) 2006-08-24
WO2004030100A1 (en) 2004-04-08

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