KR100764988B1 - 화학기계적연마장치에사용하기위한홈패턴을가지는연마패드 및 연마방법 - Google Patents
화학기계적연마장치에사용하기위한홈패턴을가지는연마패드 및 연마방법Info
- Publication number
- KR100764988B1 KR100764988B1 KR1019980017456A KR19980017456A KR100764988B1 KR 100764988 B1 KR100764988 B1 KR 100764988B1 KR 1019980017456 A KR1019980017456 A KR 1019980017456A KR 19980017456 A KR19980017456 A KR 19980017456A KR 100764988 B1 KR100764988 B1 KR 100764988B1
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- Prior art keywords
- polishing
- inches
- groove
- pitch
- width
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 268
- 239000000126 substance Substances 0.000 title claims abstract description 21
- 239000011295 pitch Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 40
- 238000005192 partition Methods 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims 2
- 239000002002 slurry Substances 0.000 description 32
- 239000010410 layer Substances 0.000 description 26
- 239000006227 byproduct Substances 0.000 description 9
- 230000003750 conditioning effect Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 101100366707 Arabidopsis thaliana SSL11 gene Proteins 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 101100366562 Panax ginseng SS12 gene Proteins 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (40)
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드로서,다수의 원형 홈을 가지는 연마 표면을 포함하며, 상기 홈은 0.02 인치 내지 0.05 인치의 깊이, 0.015 인치 내지 0.04 인치의 폭, 및 0.09 내지 0.24 인치의 피치를 가지는 연마 패드.
- 제 1 항에 있어서,상기 패드의 상부층은 0.06 인치 내지 0.12 인치의 두께를 가지는 것을 특징으로 하는 연마패드.
- 제 1 항에 있어서,상기 홈은 0.03 인치의 깊이, 0.02 인치의 폭, 및 0.12 인치의 피치를 가지는 것을 특징으로 하는 연마 패드.
- 제 1 항에 있어서,상기 홈은 격벽에 의해 분리되며, 상기 홈의 폭 대 상기 격벽의 비율은 0.10 내지 0.25인 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드로서,0.02 인치 내지 0.05 인치의 깊이, 0.015 인치 내지 0.04 인치의 폭, 및 0.09 내지 0.24 인치의 피치를 가지는 나선형 홈을 구비한 연마 표면을 갖는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드로서,제 1 폭과 제 1 피치를 갖는 제 1 다수의 원형 동심 홈을 구비하는 제 1 중간 영역; 및상기 제 1 중간 영역을 둘러싸고 제 2 폭과 제 2 피치를 갖는 제 2 다수의 원형 동심 홈을 구비하는 제 2 중간 영역을 포함하며, 상기 제 2 폭과 제 2 피치 중 적어도 하나는 상기 제 1 폭과 제 1 피치와는 다른 연마 패드.
- 제 6 항에 있어서,상기 제 2 중간 영역을 둘러싸고 제 3 폭과 제 3 피치를 갖는 제 3 다수의 원형 동심홈을 구비하는 최외측 영역을 더 포함하는 것을 특징으로 하는 연마 패드.
- 제 7 항에 있어서,상기 제 3 폭 및 제 3 피치는 각각 상기 제 1 폭 및 제 1 피치와 동일한 것을 특징으로 하는 연마 패드.
- 제 8 항에 있어서,상기 제 1 피치는 상기 제 2 피치보다 더 큰 것을 특징으로 하는 연마 패드.
- 제 9 항에 있어서,상기 제 1 피치는 상기 제 2 피치보다 2 배 더 큰 것을 특징으로 하는 연마 패드.
- 제 8 항에 있어서,상기 제 1 폭은 상기 제 2 폭 보다 더 작은 것을 특징으로 하는 연마 패드.
- 제 11 항에 있어서,상기 제 2 폭은 상기 제 1 폭보다 6 배 더 큰 것을 특징으로 하는 연마 패드.
- 제 6 항에 있어서,상기 제 1 다수의 홈은 제 1 다수의 환형 격벽에 의해 분리되고 상기 제 2 다수의 홈은제 2 다수의 환형 격벽에 의해 분리되며, 상기 제 1 다수의 격벽은 상기 제 1 영역의 표면 영역의 75%를 커버하고 상기 제 2 다수의 격벽은 상기 제 2 영역의 표면 영역의 50%를 커버하는 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드로서,제 1 중간 영역과 상기 제 1 중간 영역을 둘러싸는 제 2 중간 영역을 가지는 연마 표면, 및 상기 연마 표면에 형성되고 상기 제 1 중간 영역의 제 1 피치 및 제 2 중간 영역의 상이한 제 2 피치를 가지는 나선형 홈을 포함하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드로서,제 1 다수의 원형 동심 홈을 가지는 제 1 중간 영역; 및상기 제 1 중간 영역을 둘러싸고 다수의 사행 곡선 홈을 가지는 제 2 중간 영역을 포함하는 연마 패드.
- 제 15 항에 있어서,상기 원형 홈의 피치와 폭 중 하나 이상은 상기 사행 곡선 홈의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
- 제 15 항에 있어서,상기 사행 곡선 홈은 상기 사행 곡선 홈 크기의 1 내지 2 배 사이 및 상기 사행 곡선 홈 폭의 1 내지 2 배 사이의 피치를 가지는 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 장치에서 기판을 연마하기 위한 연마 패드로서,제 1 다수의 원형 동심 홈을 가지는 제 1 중간 영역; 및상기 제 1 중간 영역을 둘러싸고 제 2 다수의 원형 동심 홈을 가지는 제 2 중간 영역을 포함하며, 상기 제 2 다수의 동심홈의 중심은 상기 제 1 다수의 동심 홈의 중심으로부터 오프셋 되는 연마 패드.
- 제 18 항에 있어서,상기 제 1 다수의 홈 중심은 상기 제 2 다수의 홈 피치와 동일한 거리만큼 상기 제 2 다수의 홈 중심으로부터 오프셋 되는 것을 특징으로 하는 연마 패드.
- 제 18 항에 있어서,상기 제 1 다수의 원형 홈의 피치와 폭 중 하나 이상은 상기 제 2 다수의 원형 홈의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 장치에서 기판을 연마하기 위한 연마 패드로서,제 1 다수의 원형 동심 홈을 가지는 제 1 중간 영역; 및상기 제 1 중간 영역을 둘러싸고 다수의 호형 홈 세그먼트를 가지는 제 2 중간 영역을 포함하며, 상기 호형 홈 세그먼트는 각각의 호형 홈 세그먼트가 인접한 경로에 있는 호형 홈 세그먼트와 방사상으로 중첩하지 않도록 동심 원형 경로를 따라 배치되는 것을 특징으로 하는 연마 패드.
- 제 21 항에 있어서,상기 원형 홈의 피치와 폭 중 하나 이상은 상기 호형 홈 세그먼트의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 장치에서 기판을 연마하기 위한 연마 패드로서,제 1 다수의 원형 동심 홈을 가지는 제 1 중간 영역; 및상기 제 1 중간 영역을 둘러싸고 나선형 홈을 가지는 제 2 중간 영역을 포함하는 연마 패드.
- 제 23 항에 있어서,상기 원형 홈의 피치와 폭 중 하나 이상은 상기 나선형 홈의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드로서,0.06 내지 0.12 인치의 두께를 갖는 층을 포함하며, 상기 층의 한쪽면에는 내부에 형성된 복수의 홈을 갖는 연마면이 제공되며, 상기 홈은 상기 연마면에 걸쳐서 균일하게 이격되어 있으며 0.02 내지 0.05의 깊이를 가지는 연마 패드.
- 제 25 항에 있어서,상기 홈은 0.03 인치의 깊이를 가지는 연마 패드.
- 제 25 항에 있어서,상기 홈은 0.015 내지 0.04 인치의 폭을 가지는 연마 패드.
- 제 27 항에 있어서,상기 홈은 0.02 인치의 폭을 가지는 연마 패드.
- 제 25 항에 있어서,상기 홈은 0.09 내지 0.24 인치의 피치를 가지는 연마 패드.
- 제 29 항에 있어서,상기 홈은 0.12 인치의 피치를 가지는 연마 패드.
- 제 25 항에 있어서,상기 홈은 동심으로 배열되는 원인 연마 패드.
- 제 25 항에 있어서,상기 연마 패드는 상기 연마면의 반대편에 있는 상기 층의 한쪽면에 하부층을 더 포함하는 연마 패드.
- 제 32 항에 있어서,상기 홈의 바닥과 상기 하부층 사이의 거리는 0.035 내지 0.085 인치인 연마 패드.
- 제 33 항에 있어서,상기 홈의 바닥과 상기 하부층 사이의 거리는 0.04 인치인 연마 패드.
- 제 32 항에 있어서,상기 층의 두께는 0.07 인치인 연마 패드.
- 제 25 항에 있어서,상기 홈은 0.015 내지 0.04 인치의 폭과 0.09 내지 0.24 인치의 피치를 가지는 연마 패드.
- 제 36 항에 있어서,상기 홈은 0.03 인치의 깊이, 0.02 인치의 폭, 및 0.12 인치의 피치를 가지는 연마 패드.
- 제 25 항에 있어서,상기 연마면은 실질적으로 원형인 연마 패드.
- 제 25 항에 있어서,상기 홈은 상기 연마면에 실질적으로 수직인 측벽을 포함하는 연마 패드.
- 연마 방법으로서,0.06 내지 0.12 인치 두께의 층을 갖는 연마면과 기판을 접촉시키는 단계와,상기 기판과 상기 연마면 사이에 상대 운동을 수행하는 단계, 및상기 홈들이 연마액을 기판으로 분배하도록 연마액을 상기 연마면으로 공급하는 단계를 포함하며,상기 층의 한쪽면에는 내부에 형성된 복수의 홈을 갖는 연마면이 제공되며, 상기 홈은 상기 연마면에 걸쳐서 균일하게 이격되어 있으며 0.02 내지 0.05의 깊이를 가지는 연마 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060114367A KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/856,948 US5921855A (en) | 1997-05-15 | 1997-05-15 | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US8/856,948 | 1997-05-15 | ||
US08/856,948 | 1997-05-15 | ||
US09/003,315 US5984769A (en) | 1997-05-15 | 1998-01-06 | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US9/003,315 | 1998-01-06 | ||
US09/003,315 | 1998-01-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020060114367A Division KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Publications (2)
Publication Number | Publication Date |
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KR19980087060A KR19980087060A (ko) | 1998-12-05 |
KR100764988B1 true KR100764988B1 (ko) | 2007-12-14 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980017456A KR100764988B1 (ko) | 1997-05-15 | 1998-05-15 | 화학기계적연마장치에사용하기위한홈패턴을가지는연마패드 및 연마방법 |
KR1020060114367A KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020060114367A KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Country Status (7)
Country | Link |
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US (6) | US5921855A (ko) |
EP (1) | EP0878270B2 (ko) |
JP (2) | JPH1170463A (ko) |
KR (2) | KR100764988B1 (ko) |
DE (1) | DE69830944T3 (ko) |
SG (1) | SG83679A1 (ko) |
TW (1) | TW430893B (ko) |
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JP4937184B2 (ja) | 2012-05-23 |
US6699115B2 (en) | 2004-03-02 |
EP0878270B2 (en) | 2014-03-19 |
DE69830944T2 (de) | 2006-04-13 |
KR19980087060A (ko) | 1998-12-05 |
EP0878270A2 (en) | 1998-11-18 |
DE69830944D1 (de) | 2005-09-01 |
JP2008188768A (ja) | 2008-08-21 |
US6645061B1 (en) | 2003-11-11 |
TW430893B (en) | 2001-04-21 |
US6520847B2 (en) | 2003-02-18 |
US20020137450A1 (en) | 2002-09-26 |
DE69830944T3 (de) | 2014-06-26 |
KR100801371B1 (ko) | 2008-02-05 |
US5921855A (en) | 1999-07-13 |
SG83679A1 (en) | 2001-10-16 |
US20040072516A1 (en) | 2004-04-15 |
EP0878270B1 (en) | 2005-07-27 |
US20030092371A1 (en) | 2003-05-15 |
KR20060129140A (ko) | 2006-12-15 |
EP0878270A3 (en) | 2000-08-23 |
JPH1170463A (ja) | 1999-03-16 |
US6824455B2 (en) | 2004-11-30 |
US5984769A (en) | 1999-11-16 |
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