JP2008188768A - 化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド - Google Patents
化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド Download PDFInfo
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- JP2008188768A JP2008188768A JP2008126431A JP2008126431A JP2008188768A JP 2008188768 A JP2008188768 A JP 2008188768A JP 2008126431 A JP2008126431 A JP 2008126431A JP 2008126431 A JP2008126431 A JP 2008126431A JP 2008188768 A JP2008188768 A JP 2008188768A
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- 238000005498 polishing Methods 0.000 title claims abstract description 281
- 239000000126 substance Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 77
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 claims description 15
- 238000005192 partition Methods 0.000 description 35
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- 238000000034 method Methods 0.000 description 13
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- 238000009826 distribution Methods 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 101100366707 Arabidopsis thaliana SSL11 gene Proteins 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 101100366562 Panax ginseng SS12 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】本研磨パッドは化学的機械研磨装置において基板を研磨する研磨パッドであって、第1の研磨領域、前記第1の研磨領域を取り囲む第2の研磨領域及び、研磨表面に形成された螺旋みぞを有する研磨表面であって、前記螺旋みぞが、前記第1の研磨領域の第1のピッチと、前記第2の研磨領域の第2の異なったピッチとを有する研磨表面を備える。
【選択図】図12
Description
Claims (11)
- 化学的機械研磨装置において基板を研磨する研磨パッドであって、第1の研磨領域、前記第1の研磨領域を取り囲む第2の研磨領域及び、研磨表面に形成された螺旋みぞを有する研磨表面であって、前記螺旋みぞが、前記第1の研磨領域の第1のピッチと、前記第2の研磨領域の第2の異なったピッチとを有する研磨表面を備える研磨パッド。
- 化学的機械研磨装置において基板を研磨する研磨パッドであって、第1の複数の実質上円形の同心みぞを有する第1の研磨領域と、前記第1の研磨領域を取り囲み、複数の実質上蛇行するみぞを有する第2の研磨領域とを備える研磨パッド。
- 前記円形みぞのピッチ及び幅の少なくとも1つが前記蛇行みぞのピッチまたは幅と異なっている請求項2に記載の研磨パッド。
- 前記蛇行みぞが、該蛇行みぞの振幅の約1〜2倍であって該蛇行みその幅の約1.5〜2倍であるピッチを有する請求項2に記載の研磨パッド。
- 化学的機械研磨装置において基板を研磨する研磨パッドであって、第1の複数の実質上円形の同心みぞを有する第1の研磨領域と、前記第1の研磨領域を取り囲み、第2の複数の実質上円形の同心みぞを有する第2の研磨領域であって、前記第2の複数の同心みぞの中心が、前記第1の複数の同心みぞの中心から外れている第2の研磨領域とを備える研磨パッド。
- 前記第1の複数のみぞの前記中心が、前記第2の複数のみぞの前記中心から、前記第2の複数のみぞのピッチにほぼ等しい距離だけ外れている請求項5に記載の研磨パッド。
- 前記第1の複数の円形みぞのピッチ及び幅の少なくとも1つが、前記第2の複数の円形みぞのピッチまたは幅と異なる請求項5に記載の研磨パッド。
- 化学的機械研磨装置において基板を研磨する研磨パッドであって、第1の複数の実質上円形の同心みぞを有する第1の研磨領域と、前記第1の研磨領域を取り囲み、複数のみぞ弓形部分を有する第2の研磨領域であって、各みぞ弓形部分が隣接する通路上のみぞ弓形部分と半径上で重なり合わないように、前記みぞ弓形部分が同心の円形通路に沿って配置されている第2の研磨領域とを備える研磨パッド。
- 前記円形みぞのピッチ及び幅の少なくとも1つが、前記みぞ弓形部分のピッチまたは幅と異なる請求項8に記載の研磨パッド。
- 化学的機械研磨装置において基板を研磨する研磨パッドであって、第1の複数の実質上円形の同心みぞを有する第1の研磨領域と、前記第1の研磨領域を取り囲み、螺旋みぞを有する第2の研磨領域とを備える研磨パッド。
- 前記円形みぞの少なくとも1つのピッチ及び幅が前記螺旋みぞの前記ピッチまたは幅と異なる請求項10に記載の研磨パッド。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/856,948 US5921855A (en) | 1997-05-15 | 1997-05-15 | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US08/856948 | 1998-01-06 | ||
US09/003,315 US5984769A (en) | 1997-05-15 | 1998-01-06 | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US09/003315 | 1998-01-06 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17199398A Division JPH1170463A (ja) | 1997-05-15 | 1998-05-15 | 化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008188768A true JP2008188768A (ja) | 2008-08-21 |
JP2008188768A5 JP2008188768A5 (ja) | 2010-08-19 |
JP4937184B2 JP4937184B2 (ja) | 2012-05-23 |
Family
ID=25324831
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17199398A Pending JPH1170463A (ja) | 1997-05-15 | 1998-05-15 | 化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド |
JP2008126431A Expired - Lifetime JP4937184B2 (ja) | 1997-05-15 | 2008-05-13 | 化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17199398A Pending JPH1170463A (ja) | 1997-05-15 | 1998-05-15 | 化学的機械研磨装置で使用するためのみぞ付パターンを有する研磨パッド |
Country Status (7)
Country | Link |
---|---|
US (6) | US5921855A (ja) |
EP (1) | EP0878270B2 (ja) |
JP (2) | JPH1170463A (ja) |
KR (2) | KR100764988B1 (ja) |
DE (1) | DE69830944T3 (ja) |
SG (1) | SG83679A1 (ja) |
TW (1) | TW430893B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023502499A (ja) * | 2019-11-22 | 2023-01-24 | アプライド マテリアルズ インコーポレイテッド | 研磨パッドの溝を使用した、ウェハ縁部の非対称性の補正 |
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JP2023502499A (ja) * | 2019-11-22 | 2023-01-24 | アプライド マテリアルズ インコーポレイテッド | 研磨パッドの溝を使用した、ウェハ縁部の非対称性の補正 |
JP7389253B2 (ja) | 2019-11-22 | 2023-11-29 | アプライド マテリアルズ インコーポレイテッド | 研磨パッドの溝を使用した、ウェハ縁部の非対称性の補正 |
US11951589B2 (en) | 2019-11-22 | 2024-04-09 | Applied Materials, Inc. | Wafer edge asymmetry correction using groove in polishing pad |
Also Published As
Publication number | Publication date |
---|---|
EP0878270A3 (en) | 2000-08-23 |
US6824455B2 (en) | 2004-11-30 |
DE69830944T3 (de) | 2014-06-26 |
US6645061B1 (en) | 2003-11-11 |
KR100801371B1 (ko) | 2008-02-05 |
US6699115B2 (en) | 2004-03-02 |
KR20060129140A (ko) | 2006-12-15 |
JP4937184B2 (ja) | 2012-05-23 |
SG83679A1 (en) | 2001-10-16 |
EP0878270B1 (en) | 2005-07-27 |
EP0878270B2 (en) | 2014-03-19 |
JPH1170463A (ja) | 1999-03-16 |
US5984769A (en) | 1999-11-16 |
US5921855A (en) | 1999-07-13 |
US20040072516A1 (en) | 2004-04-15 |
KR100764988B1 (ko) | 2007-12-14 |
TW430893B (en) | 2001-04-21 |
US6520847B2 (en) | 2003-02-18 |
US20030092371A1 (en) | 2003-05-15 |
EP0878270A2 (en) | 1998-11-18 |
US20020137450A1 (en) | 2002-09-26 |
KR19980087060A (ko) | 1998-12-05 |
DE69830944D1 (de) | 2005-09-01 |
DE69830944T2 (de) | 2006-04-13 |
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