TWI464839B - 單層鑽石顆粒散熱器及其相關方法 - Google Patents
單層鑽石顆粒散熱器及其相關方法 Download PDFInfo
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Description
本發明係提供一種降低熱引發缺陷之熱調節半導體裝置,及其相關方法。
依據1965年由英特爾共同創立人Gordon Moore所發現之摩爾定律,半導體工業之進展係依據摩爾定律進行著。此種趨勢使得積體電路(IC)或半導體晶片可每18個月增加一倍。藉此,此優點則帶來設計上的挑戰,其中一種挑戰則為散熱設計。經常來說,此階段的設計經常被忽略,或是在元件的最後生產階段才被加入。根據熱力學的第二定律,一封閉的系統中當進行更多的功率時,會得到更高的熵(entropy)。隨著中央處理器(CPU)的電力增加,較大的電流會產生更多量的熱。因此,為了防止電路短路或燃燒,必須將熵所產生的熱移除。習知技術中而言,CPU的電力通常為約70瓦(W)或以上。例如,0.13微米技術的CPU的瓦數可能超過100瓦。目前的散熱方法,如金屬(如,鋁或銅)鰭片散熱器、以及揮發散熱管,可能會不足以作為未來世代CPU的冷卻裝置。
半導體裝置會於使用期間產生大量的熱。因此散熱材料通常係熱耦荷至此種半導體裝置以為了藉由表面面積而達到更快速的散熱效果。其中一種已被使用的散熱材料則為銅。然而,此種設計具有缺失。銅的熱膨脹係數(coefficient of thermal expansion,CTE)是大部分半導體的三倍以上。而由於此缺點,該些於高溫中操作之如LED等半導體裝置則會產生內應力,且某些情形下應力會造成熱引發缺陷,如微裂痕、層分離、及類似缺陷。由於兩種材料之熱膨脹及收縮的速率不同,此種缺陷最初會在銅與半導體間的界面產生,並導致半導體的損壞。
本發明係提供一種降低熱引發缺陷之熱調節半導體裝置,及其相關方法。本發明一態樣中,例如,一種降低熱引發缺陷之熱調節半導體裝置,係包括一散熱器,係含有一單層鑽石顆粒於一薄金屬基體內;以及一半導體材料,係熱耦合至該散熱器。本發明一態樣中,在該散熱器與半導體材料間之熱膨脹係數差異係少於或等於約50%。本發明另一態樣中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約5.0 ppm/℃。於又一態樣中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約3.0 ppm/℃。於又再一態樣中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約1.0 ppm/℃。
本發明又提供一種降低在散熱器與半導體間熱引發缺陷之方法。本發明一態樣中,該方法包括:設置一單層鑽石顆粒於一薄金屬散熱器中;以及將該散熱器熱耦合至一半導體材料,其中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約50%。本發明另一態樣中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約5.0 ppm/℃。於又一態樣中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約3.0 ppm/℃。於又再一態樣中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約1.0 ppm/℃。
另一態樣中,設置該單層鑽石顆粒於薄金屬散熱器中更包括:將該單層鑽石顆粒塗佈於一第一金屬層;並於該第一金屬層上設置一第二金屬層,使該單層鑽石顆粒夾置於其間。接著,利用充分地加熱和壓力,一起擠壓該第一及第二金屬層,以將鑽石顆粒固定於金屬層中。於一具體實施態樣中,第一及第二金屬層之至少一者之厚度係少於或等於約200μm。於另一具體實施態樣中,第一及第二金屬層之至少一者之厚度係少於或等於約100μm。
又另一態樣中,設置該單層鑽石顆粒於薄金屬散熱器中更包括:設置該單層鑽石顆粒於一金屬粉末中;並利用充分地加熱以燒結該金屬粉末,並施壓以固定該鑽石顆粒於已燒結之金屬中。於更一具體實施態樣中,設置該單層鑽石顆粒於金屬粉末,更包括:將該單層鑽石顆粒塗佈於一金屬層上;以及塗佈金屬粉末於該金屬層和鑽石顆粒上。
於再更一態樣中,設置該單層鑽石顆粒於薄金屬散熱器更包括:將該單層鑽石顆粒塗佈於一金屬基板上;將該金屬基板置於一含金屬離子之離子溶液中;以及通入電流至該離子溶液,使一金屬層電鍍形成於該金屬基板上,以穩固該鑽石顆粒。
本發明中,該散熱器可為各種態樣。該散熱器可具有任何可用的厚度,於某些情形下,薄型散熱器可更容易地裝設於半導體裝置中。而某些情形下,例如,散熱器的厚度範圍為約50μm至300μm。於另一態樣中,散熱器的厚度範圍為約100μm至200μm。此外,任何可作為本發明之散熱器的材料皆包含於本案之範圍中。於一態樣中,例如,散熱器之材料可包括如:鋁、銅、金、銀、鉑、及相似物,與其合金。於一具體實施態樣中,該散熱器係包括銅。於又一態樣中,該散熱器係包括鋁。
任何可幫助熱調整之半導體材料皆可用於本發明中並視於本發明之範圍內,其例子包括,但不限於:矽、碳化矽、矽化鍺(silicon germanium)、砷化鎵(gallium arsenide)、氮化鎵(gallium nitride)、鍺(germanium)、硫化鋅(zinc sulfide)、磷化鎵(gallium phosphide)、銻化鎵(gallium antimonide)、砷磷化鎵銦(gallium indium arsenide phosphide)、磷化鋁(aluminum phosphide)、砷化鋁(aluminum arsenide)、砷化鋁鎵(aluminum gallium arsenide)、氮化鎵(gallium nitride)、氮化硼(boron nitride)、氮化鋁(aluminum nitride)、砷化銦(indium arsenide)、磷化銦(indium phosphide)、銻化銦(indium antimonide)、氮化銦(indium nitride)、及相似物,與其組合。於一態樣中,半導體材料可包括氮化鎵、氮化鋁、或其組合。
於另一態樣中,係提供一種降低熱引發缺陷之熱調節半導體裝置。該裝置可包括:一散熱器,係含有一薄金屬層;一第一單層鑽石顆粒,係設置於薄金屬層之一側;一第二單層鑽石顆粒,係設置於相對該第一單層鑽石顆粒之另一側;以及一金屬基體,係將該第一及第二單層鑽石顆粒結合至該薄金屬層。該裝置更包括一半導體材料,係熱耦合至該散熱器,其中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約50%。
以上係廣泛地概述本發明之各種特徵,而以下係更詳述描述使更能了解本發明,而更可理解本發明相對於習知技術之優越處。本發明之其他特徵將於以下伴隨著申請專利範圍更詳細描述,或可透過具體練習而學習本發明。
應該被瞭解的是,上述圖式僅用於說明目,以進一步瞭解本發明。此外,圖式未標示尺規,而尺寸,顆粒大小,和其它態樣,為了更清楚說明,可以誇大製作。因此,為了製造本發明之散熱器,該圖式所示具體尺寸和態樣之可具有偏差。
在詳細解釋本發明前,應了解本發明不限於在此所揭示之該特定結構、方法步驟、或材料,而可擴大延伸至其同等物,如該些具有通常相關習知技術者可推之。並且,應了解在此所用之字彙僅用於描述特定實施例,而非限制本發明。
本發明中,該些用於說明書以及權利範圍中之單數用詞「一(a)」、「一(an)」、以及「該(the)」,除非內文有清楚另外注釋則除外,係包括複數之態樣。因此,「一鑽石顆粒」則可包含一或多個此等顆粒,以及「該層」係指一或多個此層。
本發明之說明書及專利權利範圍中,該些用語係如上述所定義。
在此,「顆粒」在此係指鑽石顆粒,且係表示為鑽石之顆粒型態。此顆粒可具有各種形狀,包括:圓形、橢圓形、方塊形、自形的(euhedral)、等;亦可為單晶或多晶;且可具有各種篩孔大小。習知技術中,「篩孔」係指美國篩孔(U.S. meshes)中,每單位面積之孔洞數目。在此所指之篩孔大小,除非有另行註解,皆指美國篩孔大小。再者,由於具有某「篩孔大小」之顆粒實際上係具有一小的尺寸分布範圍,因此篩孔大小係指所收集得到的顆粒的平均篩孔尺寸。在此,「散熱器」係指一可分佈或傳導熱,並將熱量由熱源導出之材料或複合物。
在此,「熱源」係指一具有某熱能量或大於此量的裝置或物體。熱源可包含由於操作產生副產物為熱之裝置,以及受到另一加熱源傳熱而加熱至某高於預期溫度的物體。
在此,「燒結」係指將二種或以上的獨立顆粒連結而形成一連續固態團塊。該燒結的步驟係包括:將顆粒共固化至至少部份地消除顆粒間之空隙。一般鑽石顆粒的燒結需要超高壓,以及碳溶劑的存在以作為鑽石燒結助劑。
該「金屬(metallic)」係指金屬以及類金屬(metalloid)。金屬係包括一般認知為金屬(發現自過度金屬、鹼金屬、及鹼土金屬在內)的化合物。舉例而言,金屬可為銀(Ag)、金(Au)、銅(Cu)、鋁(Al)及鐵(Fe)。類金屬具體包括矽(Si)、硼(B)、鍺(Ge)、銻(Sb)、砷(As)及碲(Te)。金屬材料亦包括合金或混合物,其混合物包括金屬材料。此合金或混合物可更包括額外的添加物。在本發明中,可包括以碳化物形成物(carbide former)及碳濕潤劑(carbon wetting agent)作為合金或混合物,但預期不會是唯一的金屬組成。碳化物形成物可為如鈧(Sc)、釔(Y)、鈦(Ti)、鋯(Zr)、鉿(Hf)、釩(V)、鈮(Nb)、鉻(Cr)、鉬(Mo)、錳(Mn)、鉭(Ta)、鎢(W)及鎝(Tc)。碳濕潤劑可為如鈷(Co)、鎳(Ni)、錳(Mn)及鉻(Cr)。
在此,「化學鍵(chemical bond)」及「化學鍵結(chemical bonding)」係可互換使用,其係表示一分子鍵,其可提供原子間的吸引力,使其足夠以於原子間中間面產生一二元固態化合物。
在本文中,「熔滲(infiltrating)」意指當一材料加熱至其熔點,接著以液態形式流動經過粒子間的間隙空洞。
在此,該「等級(grade)」一詞係表示鑽石顆粒之品質。較高等級係表示鑽石具有較少的缺陷以及異質。人工合成鑽石比天然鑽石更容易在製造過程中產生異質物。具有較少瑕疵和異質物之鑽石具有較佳的熱傳導性,因此較適合用於本發明中。此外,具有瑕疵及較多異質物之鑽石會於某些製成條件中容易毀損。選擇具高等級鑽石,係表示超越依照如尺寸、價錢、及/或形狀進行篩選,而對於鑽石進行有意識的選擇。較高等級鑽石代表著,在製備最少有效等級鑽石顆粒步驟後再增加至少一步驟,通常為多於一個步驟。相較於具有相同尺寸鑽石,此多出的等級一般係會增加成本。高等級或更高等級鑽石顆粒之例子包括Diamond Innovations MBS-960、Element Six SDB1100、以及Iljin Diamond ISD1700。
在本文中,「實質上(substantially)」一詞意指一動作、特徵、特性、狀態、結構、項目、或結果具有完全的或接近完全的範圍或程度。舉例而言,一「實質上」封閉的物體意指該物體不是完全地封閉就是接近完全地封閉。相較於絕對的完整,其確切可接受之誤差程度可視文中具體情況而定。然而,一般談到接近完成可視為如同絕對及完全得到具有相同的整體結果。
「實質上(substantially)」一詞可同樣地應用於一負面含意,其意指一動作、特徵、特性、狀態、結構、項目、或結果為完全的或接近完全的缺乏。舉例而言,一組成物「實質上沒有」顆粒意指該組成物不是完全地缺乏顆粒就是接近完全地缺乏顆粒,其影響如同完全地缺乏顆粒一樣。換句話說,一「實質上沒有」一成分或元素之組成物,只要不具有重要的影響,實際上可仍包含此項目(指該成分或元素)。
在本文中,「約(about)」一詞意指提供一數值範圍端點的彈性空間,即一給定值可以「稍微高於」或「稍微低於」此數值端點。
在本文中,複數的項目、結構元素、組成元件及/或材料可為了方便以一般的列舉呈現。然而,此些列舉中應解釋每個列舉元件可為單獨且獨特的元件。因此,基於一般呈現而未有相對之其他描述的群組內,此列舉的單獨元件不需要單獨地被解釋為事實上相等於其他相同列舉出的元件。
本文中,濃度、含量或其它數據可以用一範圍形式以表達或呈現。應瞭解所述範圍形式僅為方便和簡潔而使用,因此應被彈性地解釋,數值不僅包括明確列舉之範圍界限,而且包括所述範圍內包含的所有單獨數值或子範圍,如同各數值和子範圍被明確列舉一樣。例如,「大約1微米到大約5微米」的數值範圍應被解釋為不僅包括大約1微米到大約5微米的明確列舉的值,而且包括所指範圍內的單獨值和子範圍。於是,所述數值範圍中包括的為諸如2、3和4的單獨值以及諸如從1-3、從2-4、與從3-5等的子範圍,以及1、2、3、4、及5。相同原理適用於僅列舉一個數值的範圍之最小或最大值。此外,不管被描述範圍之幅度或特性,此解釋都將適用。
發明人發現當散熱器具有與半導體裝置或材料相近的熱膨脹係數(coefficient of thermal expansion,CTE)時,可直接與該半導體耦合而不需再使用熱介材料(thermal interface material,TIM)。使用相配的熱膨脹係數,可大幅減少熱引發缺陷(如,微裂痕、層分離、以及相似情形),而此些缺陷係經常於加熱及冷卻中,由於半導體材料以及散熱器之膨脹及/或收縮速率不同而造成。
鑽石材料之熱傳導率一般比銅大2至4倍。然而,鑽石的CTE約為銅的1/10。因此,將鑽石材料導入至散熱器基體(matrix)(如,銅)結合,則可增加散熱器之熱傳導率,且同時可提供更一致的CTE與該半導體相配。於許多情形中,散熱器可直接結合至半導體材料。圖3中,係顯示不同材料的熱膨脹係數以及熱傳導率。
然而,將鑽石材料(如,鑽石顆粒)設置於散熱器基體(如,銅)中,可能是一種挑戰。例如,融熔銅不易濕潤鑽石顆粒。因此,將鑽石顆粒以融溶銅熔滲可能需要非常的高壓,例如以六面頂壓機所產生的壓力。而使用此高壓裝置的必要性則限制了散熱器的尺寸,且會提高生產成本。
本發明之發明人發現用於穩固鑽石顆粒於散熱器基體之技術。如此,可將鑽石顆粒容易地加入至散熱器中,以增加熱傳導率,並調整其CTE更接近半導體材料的CTE。由於熱循環,此種裝置可降低在散熱器與半導體間之界面應力,而使減少熱引發缺陷之產生。
在此,所示之態樣之各種細節係可應用至各個散熱器、熱控制系統、以及上述之製備方法。因此,於探討某一特殊態樣時,其係可推及至支持本說明書中其他的相關態樣。
藉此,本發明提供了一種裝置、系統、以及促進半導體裝置之熱調節方法。如圖1所示,本發明一態樣中係提供一種降低熱引發缺陷之熱調節半導體裝置。此裝置可包含有一散熱器,係具有一單層鑽石顆粒12在一薄金屬基體14內。且此裝置可更包括一半導體材料16,其係熱耦合至散熱器10。於一例子中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約50%。於另一例子中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約5.0 ppm/C°。又於另一例子中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約3.0 ppm/C°。於又一例子中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約1.0 ppm/C°。於更一例子中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約0.5 ppm/C°。於再一例子中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約0.25 ppm/C°。散熱器熱耦合至半導體材料的方式有許多方法均可被使用。例如,以合金硬焊(brazing)、焊接、電鍍、其相似方法。一例子中,散熱器可藉由焊接層18耦合至半導體材料16。於另一例子中,散熱器可藉由熱界面材料之中間層而耦合至半導體材料層。
具有單層鑽石顆粒的散熱器可提供經濟及有效之熱量管理機制。將複數個鑽石顆粒以單一顆粒厚度之單層方式設置於散熱器中,使其連接於熱源時,可作為熱量管理之有效經濟設計。某些例子中,實質上沒有鑽石顆粒以單層之外的方式存在於金屬或金屬基體。於另一例子中,散熱器可包括有多層鑽石顆粒,其係與其它層不相同或為分離。
本發明之散熱器可具有各種樣式以及整體尺寸。任何樣式或物理尺寸,只要金屬或金屬基體中包含有單層鑽石即視為本發明之範疇。然而,於某些例子中,本技術可使散熱器裝置薄型化,因此可容易地合併半導體裝置及半導體系統。例如,某例子中,散熱器厚度可為約50μm至300μm。於另一例子中,散熱器厚度可為約100μm至200μm。於再另一例子中,散熱器厚度可為約300μm至1 mm。此外,當散熱氣之厚度為1 mm以上時,亦可視為在本發明之範圍中。例如,散熱器厚度可大於2 mm,或是大於4 mm。
單層鑽石顆粒之密度對於裝置的熱調節效果會有所影響。雖任何鑽石顆粒之密度皆應包含在本發明範圍內,但越大的封裝程度則會產生更高之熱調節性。例如,於一例子中,單層中的鑽石顆粒密度可為大於或等於50%。於另一例子中,單層中的鑽石顆粒密度可為大於或等於60%。於又另一例子中,單層中的鑽石顆粒密度可為大於或等於70%。於再一例子中,單層中的鑽石顆粒密度可為大於或等於80%。於更再一例子中,於單層內,實質上所有鑽石顆粒係與至少一另一鑽石顆粒相接觸。例如,於單層中,所有鑽石彼此相接觸,則會達到100%的鑽石顆粒密度。
如上述,鑽石顆粒可用於增加散熱器的熱傳導率,同時可調節或減少在散熱器與半導體材料間之CTE差異。許多因素皆可使散熱器的熱傳導率增加,例如CTE的差異。例如,於某例子中,可使用較高等級的鑽石顆粒。如果鑽石顆粒含有不純物或具有其他缺陷時,該低品質工業鑽石顆粒的熱傳導率將不會比金屬材料(如,銅)更高。高品質鑽石顆粒比低品質鑽石顆粒具有較高的熱傳導。因此,使用較高等級鑽石顆粒可增加散熱器之整體熱傳導率。
於另一態樣中,具規則形狀的鑽石顆粒亦可增加散熱器熱傳導率,如同提升CTE之相配性一樣。根據裝置的不同設計,較佳係使用具有規則形狀及/或尺寸的鑽石顆粒並將此等鑽石顆粒排列,以提升熱調節性以及CTE之和緩。而各種因素可影響該目標。例如,於某一例子中,鑽石顆粒可直接與另一鑽石顆粒以物理性地接觸,而此接觸係為鑽石-鑽石,而非鑽石-基體-鑽石(diamond-to-matrix-to-diamond)。例如,所製得的單層鑽石,其實質上所有單層中之鑽石顆粒係與單層中之至少另一鑽石顆粒直接接觸。因此,於某一例子中,實質上所有單層鑽石中之鑽石顆粒係為鑽石-鑽石接觸。於另一例子中,實質上所有單層鑽石中之鑽石顆粒係直接與一或以上的鑽石顆粒接觸並延伸,以提供一連續鑽石顆粒路徑而用於熱量流動。此外,於某些例子中,鑽石顆粒可與另一者在金屬層內隔開,使許多或所有的鑽石顆粒不會與其他鑽石顆粒接觸,或可實質上與其他鑽石顆粒接觸。
於又一態樣中,單層鑽石中的鑽石顆粒可經由相同或相似的方向排列,此排列可更提升熱傳導率並同時減少CTE的差異。除了相似的形狀、尺寸、以及方向,單層鑽石中之鑽石顆粒彼此間的接觸可為最大化。例如,一單層中具有面與面接觸的鑽石顆粒的熱調節性會大於單層中鑽石以邊與邊接觸,或甚至為邊與面之接觸的熱調節性。鑽石顆粒中互相接觸面積的最大化可使熱傳導率提升。而將接觸面積之最大化可藉由使鑽石顆粒具有相同或相近尺寸來達成。雖然不論具有任何形狀的鑽石皆可使用,但於一例子中,使用同樣具有立方形狀的鑽石顆粒可使單層中的鑽石顆粒的密度增加。
尺寸亦會影響鑽石顆粒之熱量傳導能力以及調節CTE差異。由於較大顆粒具有連續晶格,具有相同重量的複數鑽石顆粒的集結更高,使較大鑽石顆粒之熱量傳遞更有效。於某一例子中,單層鑽石中的鑽石顆粒實質上具有相同的尺寸。雖然各種尺寸的鑽石皆可使用,一例子中,鑽石顆粒之尺寸範圍可為約10μm至約2mm。於另一例子中,鑽石顆粒之尺寸範圍可為約35μm至約1 mm。於又一例子中,鑽石顆粒之尺寸範圍可為約50μm至約200μm。
各種金屬及金屬性材料皆可使用於本發明之金屬散熱器中。此些材料可使用作為金屬層、薄金屬層、金屬基體、及相似物。任何導熱金屬或金屬性材料,只要可穩固鑽石顆粒者,皆可用於本發明中。例如,某一例子中,金屬性材料實質上可為純金屬性材料。金屬性具了解係包含有金屬以及金屬合金(如,Si、B、Ge、Sb、As、及Te)。於另一例子中,金屬性材料包括有多金屬或金屬混合物、合金、明顯層、及相似物。其例子包括,鋁、銅、金、銀、鉑、及其合金與混合物,但不限於此。於一具體態樣中,金屬散熱器包括銅。於一具體態樣中,可使鈦包含於銅基體中,使鑽石顆粒具適當的潤澤。
雖單層鑽石顆粒可設置於金屬散熱器之中心,但於某些態樣中該單層可設置於接近於金屬散熱器層的一側。此種設計中,具有單層鑽石之金屬層一側接近於表面,並可設置與該熱源相近。因此,散熱器中接近至熱源之區域,可相對於遠離熱源之區域具有較高的熱傳導率。
應知道的是,在鑽石顆粒與及金屬性或金屬散熱器間的界面熱性質,可能會受到散熱器之設計影響。例如,此些界面間的孔洞可能會成為熱傳遞的阻礙。因此,散熱器裝置中,鑽石顆粒直接與單層中另一鑽石顆粒接觸,以及鑽石與金屬散熱器材料緻密接觸,其將相較於未接觸具有更高的熱傳導率。因此,鑽石顆粒可塗佈有一材料以提升散熱器的熱傳導率及/或改善在鑽石顆粒與金屬散熱器間的界面穩固。於一例子中,鑽石顆粒可被碳化成形物塗佈。該可用於塗佈於鑽石顆粒之材料,其例子包括:鈦、鎳、鉻、及相似物,但不限於。除了塗佈以外,製備過程中可將金屬基體於壓力下熔滲入單層鑽石顆粒,使散熱器的孔洞影像減少。
此外,本發明又提供一種降低在散熱器與半導體裝置間熱引發缺陷之方法,如圖2所示。此方法包括:設置一單層鑽石顆粒於一金屬散熱器22中;以及將該散熱器熱耦合至一半導體材料24。設置單層鑽石顆粒於金屬散熱器中的方式可使用各種方法,而此些任何方式皆屬於本發明之範疇中。於一例子中,設置單層鑽石顆粒於金屬散熱器中的方式可包括:將該單層鑽石顆粒塗佈於一第一金屬層;於該第一金屬層上設置一第二金屬層,使該單層鑽石顆粒夾置於其間;以及利用充分地加熱及壓力,一起擠壓該第一及第二金屬層,以將鑽石顆粒固定於金屬層中。不同於融熔金屬熔滲方式,需要高溫及高壓,本發明之散熱器可藉由將單層鑽石顆粒於該二金屬層間以一相對低的溫度及壓力下擠壓形成。此外,由於金屬層的薄形特性,使散熱器可薄型化。例如,一例子中,第一和第二金屬層之至少一層係少於或等於約200 μm之厚度。於另一例子中,第一和第二金屬層之至少一層係少於或等於約100 μm之厚度。於又一例子中,第一和第二金屬層之至少一層係為約100 μm至約3 mm。於再一例子中,第一和第二金屬層之至少一層係為約500 μm至約2 mm。此外,於形成此裝置的過程中,依據所使用的材料及裝備,可使用不同的溫度以及壓力。例如,於一例子中,所使用的溫度可為約700℃至約1000°C。於另一例子中,所使用的壓力可為約10 MPa至約50 MPa。應知道的是,該金屬層可具有各種態樣。例如,於一例子中,一或以上的金屬層可為固態金屬,例如金屬薄片。於另一例子中,一或以上的金屬可為加壓粉末。例如,將金屬粉末置放於模具中,並冷壓已形成一金屬層。
本發明另一態樣中,設置該單層鑽石顆粒於金屬散熱器中之步驟可包括:設置該單層鑽石顆粒於一金屬粉末中;以及利用充分地加熱以燒結該金屬粉末,並擠壓該鑽石顆粒以固定於已燒結金屬中。此態樣中,金屬粉末燒結可於散熱器裝置的形成中,使單層鑽石顆粒於低溫及低壓力下嵌埋於其中而形成。例如,於一例子中,溫度範圍為約700℃至約1000℃。於另一例子中,所使用的壓力可為約10 MPa至約50 MPa。於一相關的態樣中,設置該單層鑽石顆粒於一金屬粉末中的步驟可包括:將該單層鑽石顆粒塗佈於一金屬層上;以及將該金屬粉末塗佈於該金屬層以及鑽石顆粒上。該金屬層、單層鑽石顆粒、以及該金屬粉末,接著可以足夠的溫度與壓力燒結,使鑽石顆粒嵌埋於之間。另一態樣中,一金屬硬焊材料可熔滲進入至該已燒結材料中。
於又一態樣中,設置該單層鑽石顆粒於該金屬散熱器中之步驟可包括:將該單層鑽石顆粒塗佈於一金屬基板上;將該金屬基板置於一含有金屬離子之離子溶液中;以及通入電流至該離子溶液,使一金屬層電鍍形成於該金屬基板上,以穩固該鑽石顆粒。如此方法,則可形成一嵌埋有單層鑽石顆粒之固態金屬散熱器。於另一態樣中,鑽石顆粒可在電鍍前經由硬焊(braze)以穩固至一金屬基板。在此,任何金屬或金屬合金皆可用於硬焊(braze),只要其可使鑽石顆粒可以穩固至金屬基板上即可。其例子包括,鎳、鎳合金、及相似物,但不限於此。
如上述,可將該具有嵌埋單層鑽石顆粒之金屬散熱器耦合至一半導體層。各種的半導體材料皆可使用,且係依照半導體裝置的預期設計而改變。半導體材料的例子包括:矽、碳化矽、矽化鍺(silicon germanium)、砷化鎵(gallium arsenide)、氮化鎵(gallium nitride)、鍺(germanium)、硫化鋅(zinc sulfide)、磷化鎵(gallium phosphide)、銻化鎵(gallium antimonide)、砷磷化鎵銦(gallium indium arsenide phosphide)、磷化鋁(aluminum phosphide)、砷化鋁(aluminum arsenide)、砷化鋁鎵(aluminum gallium arsenide)、氮化鎵(gallium nitride)、氮化硼(boron nitride)、氮化鋁(aluminum nitride)、砷化銦(indium arsenide)、磷化銦(indium phosphide)、銻化銦(indium antimonide)、氮化銦(indizm nitride)、及其複合物,但不限於此。於一具體實施態樣中,該半導體材料包括一構件係選自群組包括:氮化鎵、氮化鋁、及其複合物。
如上述,該金屬散熱器耦合至半導體層材料可使用各種方式進行,例如,硬焊、焊接、或相似方法。於一例子中,散熱器可使用焊接方式耦合至半導體層材料。散熱器中所存在之單層鑽石顆粒可幫助調節在金屬層與半導體間CTE的匹配性,使悍接(soldering)不會引起明顯的熱引發缺陷。也就是說,由於半導體層以及熔滲鑽石顆粒之散熱器中,因此膨脹及收縮在相似的速率,使層分離、微裂痕等缺陷可得以避免或最小化。
本發明一態樣中的散熱器可裝設於各種裝置中。例如,LED裝置由於其尺寸而產生實質上熱量。而同時,此些LED裝置經常係設置於一小的封閉以及狹窄空間中。而將散熱裝置耦合裝設至LED裝置即可在僅略為增加厚度下,產生一足夠的冷卻。此外,本發明一例子中,散熱器可耦合至CPU裝置、雷射二極體、線路板、以及其他線路裝載材料、及類似物。
於本發明另一態樣中,係提供一種複數個單層鑽石顆粒之熱調節半導體裝置。例如,如圖4所示,此裝置可包括有一散熱器,散熱器具有一薄金屬層42;一第一單層鑽石顆粒44設置於該薄金屬層42之一側;以及一第二鑽單層石顆粒46,係設置於該金屬層42之另一側,並相對該第一單層鑽石顆粒44。金屬基體材料48係將該第一及第二單層鑽石顆粒44,46結合至該薄金屬層42。此外,如圖1中所討論,半導體材料16係熱耦合至散熱器,其中在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約50%。該散熱器可藉由習知任何方法熱耦合至半導體材料16。例如,於一例子中,散熱器可藉由悍接層18焊接至半導體材料16。
除了散熱器裝置,本發明之各種技術亦可用於製備具有非常接近平坦之鑽石尖端之工具。應知道,用於工具之詳細技術亦可應用至散熱裝置,因此其技術可作為散熱裝置之技術支援。該工具之一例子為CMP墊修整器。因此,藉由於低溫下擠壓鍵結於平坦表面,使鑽石顆粒可平坦及穩固於銅或其他金屬材料中,,如此可消除許多CMP墊修整器之製備過程中之熱變形相關問題。例如,一例子中,金屬層可於金屬層之相對二側設置單層鑽石顆粒。鑽石顆粒可使用黏著劑暫時耦合設置至該金屬層,該黏著劑會接著於加熱時揮發並消失。金屬層則可增厚,而強化該工具。而此金屬層的增厚,促使鑽石顆粒嵌埋於金屬材料中。如此,鑽石顆粒可藉由合金硬焊、熱壓、電鍍、或相關技術結合至金屬層。
鑽石顆粒可以一預定的圖案排列,且更可具有一固定間距或方向性。於金屬層之每一側設置單一鑽石層可調節硬焊溫度所造成的熱收縮,其中該溫度係將鑽石分佈固定於一側所用。藉由塗佈一鑽石層至金屬或支撐層之每一側一,可使兩側之扭曲作用力(如,熱量移動及壓力,)可為相等或實質上相等。如此,可將金屬或支撐層的扭曲降到最小。也就是說,彎曲所造成的作用力,實質上會平均地施加於金屬層的每一側,因而可互相相抵,如此可將扭曲之發生降至最小。於某些態樣中,該金屬層每一側的單一(single)或單個(mono)鑽石層彼此間可具有相配的形態、圖案、或方向性。如此,在金屬層每一側之鑽石顆粒實質上具有相配的空間配置。另一態樣中,該些形態、圖案、或方向可彼此間為不同,或是部分相配。於又一態樣中,圖案化設置於金屬層一側的鑽石顆粒,可依照金屬層另一側之鑽石顆粒圖案而排列,使顆粒的位置互相對應。於某些態樣中,金屬層一側之鑽石顆粒的空間配置與金屬層另一側的鑽石顆粒的空間位置之間可直接對應。於另一態樣中,該鑽石顆粒之圖案可彼此互相相配或實質上相配,或是於金屬層之對對側面偏移,使顆粒的位置不會互相相配。
將支撐層的扭曲最小化的優點與所完成工具之鑽石顆粒尖端的平坦化有關。當使用加熱及/壓力製備超研磨工具時時,即使該些顆粒已於加熱及/或加壓前預先平坦化,該支撐層之扭曲會使得尖端高度之平坦度產生變化。藉由鑽石顆粒的配置,可使支撐層兩側之扭曲作用力可平均或實質上平均地分佈,而使這些支撐層內扭曲程度相關的作用力有效地互相抵銷,如此亦可將鑽石顆粒與其他鑽石顆粒之間的相關高度移動最小化。應知道的是,本發明中,「高度」以及與高度相關的描述(如,高於、最高,等)係指在該支撐層垂直方向之距離。此外,該「突出率」係指一顆粒由參考點突出的高度或距離。於許多情形中,突出距離可由該支撐層或支撐層之特定表面而測量。因此,該尖端突出率或該尖端突出高度則應為研磨顆粒尖端由參考點(例如,支撐層表面)所突出距離。相似地,在二個顆粒間之相對突出高度差係為此些顆粒由參考點(如,支撐層)所量測突出高度差異。應注意的是,由於此為相對測量,因此參考點位置並無關係,只要由共通的參考點即可測量。此外,於某些情況中,超研磨顆粒可以一傾斜角度、彎曲度、或其它非平行於支撐層之配置。此些情形中,該突出高度需對照傾斜角度、彎曲度、或其他樣式配置進行校正,以使得顆粒之間之高度差可在不受傾斜角度、彎曲度、等的影響下測量得到。
本發明一態樣中,上述描述之該些工具可具有非常小相對高度差異之鑽石顆粒尖端。例如,一態樣中,工具內之複數鑽石顆粒中,突出最高的鑽石顆粒尖端之突出距離,係相對於突出次高的鑽石顆粒尖端之少於或等於20微米。於另一態樣中,工具內之複數鑽石顆粒中,突出最高的鑽石顆粒尖端之突出距離,係相對於突出次高的鑽石顆粒尖端少於或等於10微米。於又一態樣中,該些複數鑽石顆粒中,鑽石顆粒的突出尖端之最高10%,其突出距離係在20微米以內。於更一態樣中,該些複數鑽石顆粒中,鑽石顆粒的突出尖端之最高10%,其突出距離係在10微米以內。
此外,剛性支撐層可耦合至裝置,以幫助操作及使用。例如,某一態樣中,剛性支撐層可耦合至金屬層一側之鑽石顆粒,以使金屬層另一側的鑽石顆粒平坦化,並可露出出用於修整CMP墊。此剛性支撐層可以由任何適用於磨損或修整程序之材料製得。此材料可包括高分子材料、金屬材料、陶瓷材料、及其類似物。在一態樣中,剛性支持體可為高分子材料,並可利用加熱、擠壓、黏著劑等方式將鑽石顆粒嵌入其中。在一些態樣中,剛性支持體可為非高分子材料,如金屬層。在上述情況下,可藉由黏著劑黏附、焊接、硬焊、電鍍、及其類似方式將鑽石顆粒結合至剛性支持體。關於硬焊技術,在加熱及冷卻過程中,不會導致金屬層扭曲。
在一態樣中,鑽石顆粒可透過使用含有鉻的鎳基合金將鑽石顆粒硬焊至金屬層。於另一態樣中,該硬焊可包含:將鑽石晶體與一無法與焊料結合之平坦陶瓷材料擠壓。各種焊料合金之例子包括:BNi2、BNi7、及相似物,但不限於。此外,可使用各種鑽石顆粒尺寸,其可包括篩孔大小如10/20、30/40、80/90、90/100、100/120、120/140、140/170、170/200、200/230、230/270、270/325、及325/400。
以下係以各種方式製作本發明之散熱器的實施例。此些實施例僅用於說明,並不會限縮本發明之範圍。
將塗佈鈦之鑽石顆粒以單層設置於一第一銅金屬層。將第二銅金屬層設置於該單層鑽石之頂部,並相對該第一銅金屬層。將此銅三明治結構熱壓以形成一中間夾有單層鑽石顆粒之散熱器。氫化DLC塗佈於散熱器之一側作為絕緣層。透過濺鍍塗佈有Cr及Cu。該銅可經由電鍍使其加厚(如,至35μm)。銅層可經微影蝕刻形成線路。將一側具有藍寶石且另一側具有二個電極之LED晶圓耦合至該經蝕刻所形成的線路,而使該二電極分別連接至二個線路。
將具有GaN於藍寶石上之LED晶圓利用金進行金屬化。並將實施例1之銅散熱器焊接至該金屬化GaN。將藍寶石以雷射照射使其分離,將GaN材料以氧化銦錫(ITO)塗佈以作為透明電極,並塗佈有一小面積之金作為陽極。該銅質散熱器係作為陰極。此垂直式堆疊LED係於裝置之相對兩側具有相對電極,因此由於可降低足跡(foot print)和增加冷卻性,因此可得到更有效的發光性。
一薄金屬層(如,100微米厚的銅)具有一黏著層(即,3M生產,25微米,易變化(即,易揮發而不會殘留碳))於每一側。將塗佈鈦之鑽石顆粒(如,約50微米)分散於兩側,以在每一側製作出單層鑽石顆粒,並移除多餘的鑽石。將層設置於覆蓋了銅粉末薄層的石墨模具內。再加另一層銅粉末薄層在該層上。然後將此組件(assembly)在真空或惰性氣體下熱壓(如,900C,20分鐘),以形成兩側銅層之平坦碟盤。因鈦塗層的存在,使銅與鑽石顆粒更穩固地結合。該碟盤的平坦度可藉由平坦的模具表面而維持。然後將該碟盤兩側抛光,使其表面平整。而所形成的碟盤含有二個鑽石層在銅基體內,使其具有高熱傳導率及低CTE。
如同實施例3,但薄金屬銅層具有一硬焊合金層(即,Cu-Sn-Ti或Ag-Cu-Ti)耦合至每一側。未塗佈的鑽石顆粒以黏結劑設置於硬焊合金層之暴露側。將該組件在真空爐加熱融熔焊料,形成一銅層覆蓋於在兩側之鑽石晶體。將鑽石附著層懸浮於連接至陰極的CuSO4
電解質溶液。該陽極係一銅電極。在將電流通過電解質後,銅會被電鍍在銅層以及鑽石顆粒間的間隙。此形成的結構為一銅散熱器,並具有二個單層鑽石設置其中。
如同實施例4,但以薄鎳層取代銅層,且硬焊層為Ni-Cr-B-Si(BNi2,如Wall Colmonoy所生產之Nichrobraze LM),而鑽石顆粒(如,150微米)以網狀圖案排列(如,間隙為500微米)。該硬焊雙層,代替顆粒間之間隙填充,並對著具有一熱塑性黏著劑(150 C,10分鐘)在其間之平面基板(108 mm直徑,6.5mm厚度)擠壓。如此可得到一具有平坦表面之CMP墊修整器之工具。在每一側之單層,可調節由硬焊溫度(如,1020℃,10分鐘)之熱收縮,其中,該硬焊溫度會造成其中一側的鑽石分佈不對稱。
將無氧銅粉末(尺寸為1-4微米)於一模具中冷壓,以形成一薄層。將經由120/140網目過篩的鈦塗佈鑽石顆粒分佈於該單層銅上方。接著,設置一第二冷壓薄銅層於上方。將此三明治結構於20 Mpa和950℃下熱壓20分鐘。將得到的三明治結構散熱器之兩側拋光以得到10微米的平坦度(flatness)以及1微米的平滑度(smoothness)。
當然,應瞭解上述配置僅為圖解本發明原理的應用。在不偏離本發明精神和範圍情况下,該領域的技術人員可設計許多修飾和替代配置,且所附申請專利範圍將要包含此等修飾和配置。於是,儘管已使用當前認為是本發明最實際且較佳的實施例來特定且詳細地在上面描述了本發明,但是顯然對該領域的技術人員來說,在不偏離本文所闡明的原理和概念的情况下可進行許多修飾,所述修飾包括尺寸、材料、形狀、形式、功能和操作方式、裝配和用途的變化,但不限於這些。
10‧‧‧散熱器
12‧‧‧單層鑽石顆粒
14‧‧‧薄金屬基體
16‧‧‧半導體材料
18‧‧‧焊接層
22‧‧‧散熱器
24‧‧‧半導體材料
42‧‧‧薄金屬層
44‧‧‧第一單層鑽石顆粒
46‧‧‧第二單層鑽石顆粒
48‧‧‧金屬基體材料
圖1係本發明一實施例之散熱器之示意圖。
圖2係本發明一實施例之降低在散熱器與半導體裝置間熱引發缺陷之方法之流程圖。
圖3係各種材料之熱膨脹係數與導熱率之關係圖。
圖4係本發明一實施例之散熱器之示意圖。
應理解,上述圖示僅用於可更進一步解釋使理解本發明之用意。此外,該些圖示並未標示比例,因此尺寸、顆粒大小、以及其他的態樣可(且通常係)適當地使該些說明更為清楚。因此,可使用不同的特定尺吋以及圖示態樣來製備本發明之散熱器。
12...單層鑽石顆粒
14...薄金屬基體
16...半導體材料
18...焊接層
Claims (14)
- 一種降低在散熱器與半導體間熱引發缺陷的方法,包括:設置一單層鑽石顆粒於一薄金屬散熱器中;以及將該散熱器熱耦合至一半導體材料,其中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約50%;其中,設置該單層鑽石顆粒形成於該薄金屬散熱器中更包括:將該單層鑽石顆粒塗佈於一金屬基板上;將該金屬基板置於一含金屬離子之離子溶液中;以及通入電流至該離子溶液,使一金屬層電鍍形成於該金屬基板上,以穩固該鑽石顆粒。
- 如申請專利範圍第1項所述之方法,其中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約5.0ppm/℃。
- 如申請專利範圍第1項所述之方法,其中,該散熱器係透過焊接熱耦合至該半導體材料。
- 如申請專利範圍第1項所述之方法,其中,設置單層鑽石顆粒於該薄金屬散熱器中更包括:塗佈該單層鑽石顆粒於一第一金屬層;於該第一金屬層上設置一第二金屬層,使該單層鑽石顆粒夾置於其間;以及利用充分地加熱和壓力,一起擠壓該第一及第二金屬層,以將該鑽石顆粒固定於層中。
- 如申請專利範圍第4項所述之方法,其中,該加熱之溫度為約700℃至約1000℃,且該壓力係為約10MPa至約50MPa。
- 如申請專利範圍第1項所述之方法,其中,設置該單層鑽石顆粒於該薄金屬散熱器中更包括:設置該單層鑽石顆粒於一金屬粉末中;以及利用充份地加熱以燒結該金屬粉末,並施壓以固定該鑽石顆粒於已燒結之金屬中。
- 如申請專利範圍第1項所述之方法,其中,該散熱器之厚度係為約50μm至約300μm。
- 如申請專利第1項所述之方法,其中,該散熱器係包括一成份選自由:鋁、銅、金、銀、鉑、及其合金所組成之群組。
- 如申請專利範圍第1項所述之方法,其中,該半導體材料係包括一成份選自由:矽、碳化矽、矽化鍺(silicon germanium)、砷化鎵(gallium arsenide)、氮化鎵(gallium nitride)、鍺(germanium)、硫化鋅(zinc sulfide)、磷化鎵(gallium phosphide)、銻化鎵(gallium antimonide)、砷磷化鎵銦(gallium indium arsenide phosphide)、磷化鋁(aluminum phosphide)、砷化鋁(aluminum arsenide)、砷化鋁鎵(aluminum gallium arsenide)、氮化硼(boron nitride)、氮化鋁(aluminum nitride)、砷化銦(indium arsenide)、磷化銦(indium phosphide)、銻化銦(indium antimonide)、氮化銦(indium nitride)、及其複合物所組成之群組。
- 如申請專利範圍第1項所述之方法,其中,該半導體材料係包括一成份係選自群組包括:氮化鎵、氮化鋁、及其複合物。
- 一種降低熱引發缺陷之熱調節半導體裝置,係包括:一散熱器,係包括:一薄金屬層;一第一單層鑽石顆粒,係設置於該薄金屬層之一側;一第二單層鑽石顆粒,係設置於相對該第一單層鑽石顆粒之薄金屬層之一側;一金屬基體,係將該第一及第二單層鑽石顆粒結合至該薄金屬層;以及一半導體材料,係熱耦合至該散熱器,其中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約50%。
- 如申請專利範圍第11項所述之裝置,其中,該金屬基體係為一成份選自由:焊料材料、燒結材料、電鍍材料、以及其組合所組成之群組。
- 如申請專利範圍第11項所述之裝置,其中,在該散熱器與該半導體材料間之熱膨脹係數差異係少於或等於約5.0ppm/℃。
- 如申請專利範圍第11項所述之裝置,其中,實質上所有於相同單層中之鑽石顆粒係與該單層中之至少一其它鑽石顆粒直接接觸。
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US8777699B2 (en) | 2014-07-15 |
WO2012040373A3 (en) | 2012-06-21 |
CN103221180A (zh) | 2013-07-24 |
CN103299418A (zh) | 2013-09-11 |
WO2012040374A2 (en) | 2012-03-29 |
US20120244790A1 (en) | 2012-09-27 |
WO2012040373A2 (en) | 2012-03-29 |
US20120241943A1 (en) | 2012-09-27 |
US20140235018A1 (en) | 2014-08-21 |
US8531026B2 (en) | 2013-09-10 |
US20150072601A1 (en) | 2015-03-12 |
TW201220445A (en) | 2012-05-16 |
TW201223704A (en) | 2012-06-16 |
WO2012040374A3 (en) | 2012-07-05 |
TWI451942B (zh) | 2014-09-11 |
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