1286097 九、發明說明： 【發明所屬之技術領域】 ’特別是 本發明是關於一種研磨工具及其製造方法 關於一種鑽石研磨工具及其製造方法。 【先前技術】 $夕ίϊίΐ米半導體元件的縣x，縣妓微細化 和夕重$金屬内連線技術的發展，晶圓表面的氧化層 (oxide layer)與金屬層（metal layer)的全面平坦化^ 術亦愈趨，要。為了在更小的面積上堆積更密集的線 路，晶圓每層的厚度與平整度都要嚴格要求。 化學機械研磨技術是利用研磨劑（slurry)和研磨墊 (polish pad)配合機械研磨的動作，將晶圓之氧化層與 金屬層土平，達到全面平坦化以減少設計佈局限制、曰& 升配線密度(pattern density)、降低缺陷密度(射奶 =sity)和提升製程良率。簡單來說，化學機械抛光 (Chemical Mechanical Polishing, CMP)所需之設備， 包含設有研磨墊的研磨平台（Platen)，與用以固定晶圓 和施加，力的晶圓承載器（carrier)。晶片承載器可利用 ^空抽氣的方法吸住晶圓背面，然後將晶圓之正面，即 需要被平坦化的部分，壓置於研磨平台之研磨墊上，藉 由研磨墊及晶片承載器之間的相對運動進行機械研磨， 並同時透過添加研磨劑產生適當的化學反應來提高研磨 效率。 然而，研磨墊在進行一段時間的研磨之後，其表面 的結構，如表面花紋和表面粗糙度等，會因為持續拋光 的機械動作而趨於平滑。並且，晶圓磨下的碎屑會沉積 1286097 於，磨墊表面，使其拋光晶圓的速率降低甚至失去拋光 功能。因此，在進行化學機械研磨時，通常需以研磨工 具(abrasive tool)對研磨墊進行間歇性的修整，即括除 研磨墊之表層和磨屑，維持研磨墊的粗糙表面，以恢復 研磨墊的拋光作用並延長其壽命。 習知的研磨工具，如「第4圖」所示，是將複數個 磨料顆粒1藉由結合劑層2以隨機（ran(i〇m)排列之不 規則方式固者於基材3的表面上。此種研磨工具乃是利 用磨料顆粒所具有之高硬度與高耐磨之特性，來達到對 研磨墊研磨加工的功能。由於鑽石是目前所知最硬的工 業材料之一，工業上常利用鑽石來作為研磨工具的超級 磨料（super-abrasive)。 然而在化學機械研磨的製程中，研磨工具表面所固 著之磨料顆粒（abrasive parti c 1 es)往往無法抓牢於該 金屬基材表面上，常會有磨料顆粒自研磨工具脫落的問 題，脫落的磨料顆粒極易刮壞精密且昂貴的晶圖。特別 是於磨料顆粒隨機排列的情形下，研磨工具表面的磨料 顆粒容易分佈不均勻，使得每一磨料顆粒所承受之研磨 力道也不同’更容易因附著強度不足而造成的磨料顆粒 脫落問題，而且研磨效果也不穩定。因此，為了進一步 增加研磨工具的使用壽命，提高研磨工具的研磨特性， 乃有將磨料顆粒4以規則性排列方式均勻地分佈於研磨 工具5的做法被提出（如「第5圖」所示之矩陣式排列）， 以取代傳統研磨工具上磨料顆粒隨機不規則的排列方 式。例如，美國專利 4, 925, 457 與 5, 092, 910「Abrasive tool and method for making」，即揭露一種利用篩網使 磨料顆粒呈現規則排列圖案的研磨工具及其燒結製程。 亦有利用電腦視覺檢視系統做定位，而將磨料顆粒規則 1286097 Ϊίίίί材ί者，例如中華民國專利公告榻375「形 ，化子祛械研磨墊之研磨工具的方法」。另 專利公告412461 「修整晶圓研磨墊的 二 以及中華民國專利公告394723「具規則g = 粒規則性排列或均勻、分佈也都揭露將磨料顆 對應用於具紐密與高產品附 =磨工具’為了得到對CMP研磨墊最佳業 ，鑽石顆粒的排列方式：包括圖案（patt⑽）、間距 (P = )、，度（P广ticlesize)、露出高度（pr〇加_ )、均勻性等以及鑽石的晶形（即銳利度），都必須 ，瑕佳化條件來加以設計。而為提高研磨工具之: (cutting rate)，通常需要一、提高鑽石的銳利度 ^提高鑽石顆粒湖的密度。細使賊利度高_ 石吊會因其破裂強度較低而有較高的鑽石破裂風險。因 此在CMP pad C〇nditi〇ner(CMP研磨墊修整器或稱镨 碟）的製造上，以提高鑽石的排列密度來增加修=== 削率，較為安全的做法。具有預先設狀圖案 版或篩網來對磨料顆粒進行定位與排列，將磨料顆粒以 適當間距均勻地規則性排列於研磨工具，雖然可達 磨料顆粒受力較為均勻的目的，然而受限於模版或筛網 的網孔間距（就目前應用於1C廉CMP製程的具規則 磨料的修整器而言，其主流產品所使用之鑽石平均粒俨 約在100〜220um，其網孔間距小至250〜35〇咖在產品| 產上已接近模版製造的極限）’研磨卫具表面的磨料 密度無法提高。 【發明内容】 1286097 有鐘於此，本發㈣目的在於提供—種研磨工 方法，係結合規則與隨機之磨料顆粒排列方^ 時表面設置規則排列之複數個磨料顆粒蔟以同 =焉磨料顆㈣密度及維持磨料顆粒蔟受力 = 而乓加研磨工具之切削率與使用壽命。 查“ ί發撕提出的·工具，其結構包括··基材、複 固磨料顆減以及結合綱，磨制賴為群聚 ^個磨料顆粒，複數個磨料顆粒·以規則排列方 粗if*材表面’並藉由基材表面之結合綱使群聚之磨 枓顆粒簇結合並固著於基材。 其中，結合劑層可為金屬谭料&或高分 層，用以提供結合磨粒所需之結合力。結合劑層可^ ϊ溫焊料以減少高溫硬焊製程所造成的基材變形與鑽石 =的，題。而使用高分子結合劑制可完全免除焊接 製程及其衍生的問題。 本發明更包含研磨工具之製造方法，可包括下列步 驟二提供-基材，其表面具有結合劑層，·提供—磨粒排 列核板，其具有規則排列之複數個磨粒定位孔；將磨粒 排列模板f”立疊合於基材表面；將磨料_填入磨粒定 位，形成複數個磨料顆粒簇，磨粒定位孔徑為磨料顆粒 粒徑之1· 75倍〜2· 5倍；最後分離磨粒排列模板，並使複 數個磨料顆粒藉由結合劑層並固著於基材表面。 其中，磨粒定位孔經由適當之尺寸設計而使單一孔 洞能容納複數個磨料顆粒，以形成磨料顆粒簇。磨粒定 位孔可配合所欲形成之研磨工具的磨粒顆粒排列圖案， 而有不同之規則排列佈局設計。較佳來說，磨粒定^立孔 可排列佈局成圓盤狀或環狀（d〇nut type)或齒狀 1286097 (^egment type)，而且磨粒定位孔間距最好至少比磨粒 疋位孔孔徑大75um以上，如此在磨粒排列模版的量產上 較為可行。 為使對本發明的目的、構造特徵及其功能有進一步 的了解，茲配合圖示詳細說明如下·· 【實施方式】 本發騎揭露之研紅具及其製造方法，可增 磨工具之切削率，並解決研磨工具因受力不均勻 落=，而使研磨工具有更佳的研磨均句 ^使用^。本發_方法特财利於應用於高精度 ，，化學機械研磨之研磨墊修整器（pGli ad condUioner/dresser)的製造上，故以下將 發明之研磨塾修整器結構及其製造方法以做 ^本 並以鑽石顆粒作為磨料顆粒。 〜、 ， 請參考第1圖，其為本發明實施例 之剖面示意圖，包括··基材⑽、複數個鑽益 以及結合劑層110,鑽石顆粒簇200包括群溏、 複數個鑽石顆粒簇200係以規則排 Γίίί材表面，彼此間隔固定之間距，再 =100表面之結合劑層11G使群聚之鑽石 ZT'f 【用鑽石顆粒簽將使單-研磨區域之鑽石;度;:提 結合劑層可為高分子結合劑、金. 料或其它可触心雕與紐足触 1286097 j。高分子結合财為—觀過—段_即自 二吊严脂’也可以是熱硬化性樹脂或光;化性 加，烤或紫外光(uv)照射即可 fur (或其它金屬）將鑽石底部包覆固定於ϋ 料(°、!ϋΤΙ貝il利用高溫真空爐硬銲法，使金屬焊 ϊϋι為錄絡5金)炫融而將鑽石焊接於金屬基材上。 固定二利：if粉末作為結合劑層’經由高溫燒結以 口疋鑽石，或疋利用陶瓷材料作為結合劑層者。 磨墊:參ίί造2=!二圖其為本發明 分子、提供'"紐⑽，其^塗佈有高 如第2B圖所示，提供磨粒排列模板3〇〇，其具有規 則排列之複數個磨粒定位孔31〇;磨粒排列模板3〇〇、係用 以^鑽石難能依縱_產生_制並局限其 與位置，故磨粒排列模板3〇〇係依照不同需求設計 其，定位孔31◦之圖案排列以及尺寸。受限於磨粒排 =杈板300的量產製程可行性與強度及壽命要求，磨粒 定位孔310孔徑最好比磨粒排列模板間距至少小75um， 如此孔緣與孔緣之間才會有足夠距離，使磨料排列磨版 在製造，鑽孔的困難度降低，且在使用上較不會發生破 ^的問題。換句話說，磨粒定位孔的間距最好要比磨粒 ^的孔徑大75um，在產品量產的經濟與技術層面上來 說較為可行。就現在具規則佈鑽的CMP研磨墊修整器所 使用的鑽石規格而言，其平均粒徑大多在100〜220um之 間，例如粒度US mesh #70/75(平均粒徑約210um)， 1286097 #80/90(平均粒徑約i80um)，#1〇〇/ΐ2〇(平均粒徑約 150um) #120/140(平均粒徑約 i25um)，#140/170(平均粒 径約llOum)等，為達到較高的鑽石排分佈密度磨粒定位 孔310的間距最佳為250微米至700微米，然而磨粒定 位孔間距的貫際設計，仍視使用磨粒之粒度大小而定， 間距過大將失去提高鑽石分佈密度的實質效果，而間距 過小則在磨粒排列模版的製作困難度會大幅提高，且相 對只能使用較小粒度的鑽石規格）。 如第2C圖所示，將磨粒排列模板3〇〇對位疊合於基 材100表面。 如第2D圖所示，將鑽石顆粒21〇填入磨粒定位孔 310形成複數個鑽石顆粒簇200，並可依情況施加適當之 壓^使鑽石顆粒210略嵌入結合劑層11〇。一般來說，為 使單一磨粒定位孔310能容置複數個鑽石顆粒21〇,由於 鑽石顆粒的晶形不一，且顆粒大上亦非完全相同，故磨 粒定位孔310孔徑之最佳化設計為鑽石顆粒21〇粒徑之 1.75〜2· 5倍之間。如此藉由不同之鑽石粒度與磨粒定位 孔孔，設計，可使鑽石顆粒簇的平均顆粒數在2〜8顆之 間作最佳化之調整，特別是，當複數個鑽石顆粒21〇通 過磨粒定位孔310形成鑽石顆粒簇2〇G時，將提高鑽石 顆粒210尖點朝上的機率，更增加其切削率，同時鑽石 顆粒簇中的鑽石顆粒亦能維持均勻的分佈形態。 如第2E圖所示，分離磨粒排列模板3〇〇，並硬化結 合劑層110,使複數個鑽石顆粒21〇形成規則排列之複數 個鑽石顆粒簇200，並藉由結合劑層固著於基材1〇〇 表面。 另一方面，除了上述方式外，本發明之研磨墊修整 1286097 =也可利用硬銲的方式來製造，請參閱/「第6圖」，首先 提==基材（步驟6〇1)，基材的種類同土面所述，接著 f銲料利用黏著劑(adhesi ve)或黏膠(glue)等結合於基 ^亡(步驟602 )，且銲料可以為箱狀(f〇i i)、粉狀(p〇wder) 或疋粉末與有機結合劑層（〇rganic binder)經混捻 (mixing)與滾軋(r〇iling)後之混合體，並於基材上成型 =需要塗佈磨料顆粒的位置（或稱為佈鑽區），然後將磨 ，顆粒以磨料顆粒簇的形式佈於基材上（步驟6〇4)，此 ，為了固疋磨料顆粒，得於佈鑽區塗上第二次黏著劑 或黏膠，此動作可於佈磨料顆粒之前或之後皆可，最後 用硬銲的方式使蘭難永久崎於紐之上（步驟 叫苓考第3圖，其為本發明實施例之研磨墊修整器 ΪΪΪΪ。其中，鑽石顆粒蔟係由群聚之複數個鑽石顆 ^ ^ ’且複數個鑽石顆粒簇係以規則排列方式設置 於基材表面，間隔固定之間距。1286097 IX. Description of the invention: [Technical field to which the invention pertains] </ RTI> In particular, the present invention relates to an abrasive tool and a method of manufacturing the same relating to a diamond abrasive tool and a method of manufacturing the same. [Prior Art] The development of the metal layer of the semiconductor element of the semiconductor chip, the oxide layer and the metal layer of the wafer surface. The technique is getting better and better. In order to accumulate denser lines over a smaller area, the thickness and flatness of each layer of the wafer are critical. The chemical mechanical polishing technology uses a slurry and a polish pad in combination with mechanical polishing to flatten the oxide layer of the wafer and the metal layer to achieve full planarization to reduce design layout restrictions, 曰 & Pattern density, reduced defect density (shooting milk = sity) and improved process yield. Briefly, the equipment required for Chemical Mechanical Polishing (CMP) consists of a polishing plate with a polishing pad and a wafer carrier for fixing the wafer and applying force. The wafer carrier can suck the back surface of the wafer by means of air evacuation, and then press the front side of the wafer, that is, the portion to be flattened, on the polishing pad of the polishing platform, by using the polishing pad and the wafer carrier. The relative motion between the two is mechanically ground, and at the same time, the grinding efficiency is improved by adding an abrasive to generate an appropriate chemical reaction. However, after a certain period of grinding, the surface of the polishing pad, such as the surface pattern and surface roughness, tends to be smooth due to the mechanical action of continuous polishing. Moreover, the debris from the wafer will deposit 1286097 on the surface of the pad, which will reduce the rate of polishing the wafer and even lose the polishing function. Therefore, when performing chemical mechanical polishing, it is usually necessary to intermittently trim the polishing pad with an abrasive tool, that is, to remove the surface layer and the grinding debris of the polishing pad, and maintain the rough surface of the polishing pad to restore the polishing pad. Polishing and extending its life. A conventional grinding tool, as shown in FIG. 4, is a method in which a plurality of abrasive grains 1 are fixed on the surface of the substrate 3 by a random (ran (i〇m) arrangement of the bonding agent layer 2). This kind of grinding tool utilizes the high hardness and high wear resistance of abrasive particles to achieve the function of grinding the polishing pad. Since diamond is one of the hardest industrial materials known at present, it is often used in industry. The use of diamonds as a super-abrasive for abrasive tools. However, in chemical mechanical polishing processes, abrasive particles (abrasive parti c 1 es) adhered to the surface of the abrasive tool often cannot grip the surface of the metal substrate. On the top, there is often the problem that the abrasive particles are detached from the grinding tool, and the detached abrasive particles can easily scratch the precise and expensive crystal image. Especially in the case where the abrasive particles are randomly arranged, the abrasive particles on the surface of the grinding tool are easily distributed unevenly. The grinding force of each abrasive grain is also different. 'The problem of abrasive particles falling off due to insufficient adhesion strength is also more difficult, and the grinding effect is also unstable. Therefore, in order to further increase the service life of the grinding tool and improve the grinding characteristics of the grinding tool, it is proposed to uniformly distribute the abrasive grains 4 to the grinding tool 5 in a regular arrangement (as shown in "Fig. 5"). a matrix arrangement) to replace the random irregular arrangement of the abrasive particles on a conventional abrasive tool. For example, U.S. Patent Nos. 4,925,457 and 5,092,910, "Abrasive tool and method for making", discloses a use of a screen. An abrasive tool that causes the abrasive particles to be in a regular arrangement pattern and a sintering process thereof. There is also a computer vision inspection system for positioning, and the abrasive grain rule is 1286097 Ϊίίίί material, for example, the Republic of China patent notice couch 375 "shape, chemical machine "Method of grinding the polishing tool of the pad". Another patent publication 412461 "Finishing the wafer polishing pad 2 and the Republic of China Patent Publication 394723" has a regular g = regular arrangement or uniformity of the grain, and the distribution is also disclosed. New and high-products with the = grinding tool 'in order to get the best industry for CMP polishing pads, the arrangement of diamond particles Including the pattern (patt (10)), the pitch (P = ), the degree (P wide ticlesize), the exposed height (pr〇 plus _), uniformity, etc., and the crystal form of the diamond (ie, the sharpness), all must be To improve the grinding tool: (cutting rate), usually need to improve the sharpness of the diamond ^ increase the density of the diamond particle lake. Fine thief high degree _ stone crane will have lower rupture strength Higher risk of diamond rupture. Therefore, in the manufacture of CMP pad C〇nditi〇ner (CMP pad dresser or sputum disc), it is safer to increase the diamond density by increasing the density of diamonds. . The pre-shaped pattern plate or screen is used to position and align the abrasive particles, and the abrasive particles are evenly and regularly arranged at the appropriate spacing on the grinding tool. Although the abrasive particles are more uniform in force, they are limited by the template. Or the mesh spacing of the screen (for the regular abrasive dresser currently used in the 1C CMP process, the average grain size of the diamond used in the mainstream products is about 100~220um, and the mesh spacing is as small as 250~ 35 在 coffee in the product | production is close to the limit of stencil manufacturing) 'the abrasive density of the surface of the abrasive visor can not be improved. SUMMARY OF THE INVENTION 1286097 There is a clock here, the purpose of this (4) is to provide a method of grinding, combined with the rules of the random abrasive particles arranged in the surface of the regular arrangement of the plurality of abrasive particles 蔟 焉 = 焉 焉(4) Density and maintenance of abrasive particles 蔟 force = cutting rate and service life of the pong plus grinding tool.查 提出 提出 提出 提出 工具 工具 工具 工具 工具 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材' And by combining the surface of the substrate, the cluster of abrasive particles is bonded and fixed to the substrate. The binder layer may be a metal tantalum & or a high layer to provide a bonded abrasive grain. The bonding force can be used to reduce the deformation of the substrate and the diamond caused by the high-temperature brazing process, and the use of the polymer binder can completely eliminate the welding process and its derivatives. The invention further comprises a method for manufacturing an abrasive tool, which may comprise the following step 2: providing a substrate having a layer of a binder on the surface thereof, providing an abrasive grain arrangement nuclear plate having a plurality of regularly positioned plurality of abrasive particle positioning holes; The particle array template f" is superimposed on the surface of the substrate; the abrasive_ is filled into the abrasive grains to form a plurality of abrasive particle clusters, and the abrasive particle positioning pore diameter is 1.75 times to 2. 5 times of the abrasive particle diameter; Separating the abrasive grain arrangement template, and A plurality of abrasive particles are bonded to the surface of the substrate by a layer of a binder. Among them, the abrasive locating holes are appropriately sized to allow a single hole to accommodate a plurality of abrasive particles to form a cluster of abrasive particles. The abrasive particle positioning holes can be matched with the abrasive grain arrangement pattern of the abrasive tool to be formed, and have different regular arrangement layout designs. Preferably, the abrasive particles are arranged in a disc shape or a circular shape or a tooth shape 1286097 (^egment type), and the spacing of the abrasive particles is preferably at least better than that of the abrasive particles. The pore size of the pores is larger than 75 μm, which is feasible in mass production of the abrasive grain array. In order to further understand the object, structural features and functions of the present invention, the following detailed description will be given with reference to the accompanying drawings. [Embodiment] The grinding redness of the hairdressing and the manufacturing method thereof can increase the cutting rate of the tool. And solve the grinding tool due to the uneven force of the force =, so that the grinding tool has a better grinding sentence ^ use ^. The present invention is advantageous for the manufacture of a high-precision, chemical mechanical polishing pad dresser (pGli ad condUioner/dresser), so the following structure and manufacturing method of the grinding trowel are invented Diamond particles are used as abrasive particles. 〜1, please refer to FIG. 1 , which is a schematic cross-sectional view of an embodiment of the present invention, including a substrate (10), a plurality of diamond benefits, and a binder layer 110. The diamond particle cluster 200 includes a group of diamonds and a plurality of clusters of diamond particles 200. The surface of the material is 规则 ίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίίί The agent layer can be a polymer binder, a gold material or other tangible eagle and a new foot touch 1286097 j. The polymer is combined with the money - the view - the _ _ from the two hanging fat 'can also be a thermosetting resin or light; chemical plus, roasted or ultraviolet (uv) irradiation can be fur (or other metal) diamond The bottom is coated and fixed on the metal substrate (°, !, mussel il is hard soldered by a high-temperature vacuum furnace, and the metal soldering iron is used to record 5 gold) to weld the diamond to the metal substrate. Fixed two benefits: if powder as a binder layer 'sintered diamonds by high temperature sintering, or enamel using ceramic materials as a binder layer. Grinding pad: ίίί造2=! The second figure is the molecule of the present invention, providing '" New (10), which is coated as high as shown in Figure 2B, providing a grain arrangement template 3〇〇, which has a regular arrangement The plurality of abrasive locating holes 31 〇; the abrasive grain arranging template 3 〇〇, is used for the diamond 难 依 产生 产生 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ It has a pattern arrangement and a size of the positioning holes 31◦. Limited by the feasibility and strength and life requirements of the mass production process of the abrasive grain row=the slab 300, the diameter of the abrasive locating hole 310 is preferably at least 75 um smaller than the spacing of the granule arrangement template, so that the hole edge and the hole edge are There is a sufficient distance to make the abrasive alignment plate manufacture, the difficulty of drilling is reduced, and the problem of breakage does not occur in use. In other words, the spacing of the abrasive locating holes is preferably 75 um larger than the diameter of the abrasive granules, which is more economical and technical in terms of mass production. For diamond specifications used in conventional CMP pad dressers, the average particle size is mostly between 100 and 220 um, for example US mesh #70/75 (average particle size of about 210 um), 1286097 # 80/90 (average particle size about i80um), #1〇〇/ΐ2〇 (average particle size about 150um) #120/140 (average particle size about i25um), #140/170 (average particle size about llOum), etc. In order to achieve a higher distribution of diamond row density, the spacing of the abrasive locating holes 310 is preferably from 250 micrometers to 700 micrometers. However, the continuous design of the spacing of the abrasive locating holes is still determined by the particle size of the abrasive particles, and the spacing is too large. Loss of the substantial effect of increasing the density of diamond distribution, while the spacing is too small, the difficulty in the production of the abrasive grain stencil will be greatly improved, and relatively only a smaller size diamond specification can be used). As shown in Fig. 2C, the abrasive grain array template 3〇〇 is superposed on the surface of the substrate 100. As shown in Fig. 2D, the diamond particles 21 are filled into the abrasive locating holes 310 to form a plurality of diamond particle clusters 200, and a suitable pressure is applied as appropriate to cause the diamond particles 210 to be slightly embedded in the binder layer 11〇. Generally, in order to allow the single abrasive particle positioning hole 310 to accommodate a plurality of diamond particles 21〇, since the crystal shape of the diamond particles is different and the particles are not completely the same, the pore diameter of the abrasive particle positioning hole 310 is optimized. Designed as a diamond particle 21〇 particle size between 1.75~2·5 times. Thus, by different diamond particle size and abrasive particle positioning pores, the design can optimize the average particle number of the diamond particle cluster between 2 and 8 pieces, especially when a plurality of diamond particles 21 pass through. When the abrasive particle positioning holes 310 form the diamond particle cluster 2〇G, the diamond particles 210 are increased in cubit point upward, and the cutting rate is increased, and the diamond particles in the diamond particle cluster can maintain a uniform distribution pattern. As shown in FIG. 2E, the separation abrasive grain array template 3〇〇 and the bond layer 110 are hardened to form a plurality of diamond particles 21〇 into a plurality of regularly arranged diamond particle clusters 200, and are fixed by the binder layer. Substrate 1 〇〇 surface. On the other hand, in addition to the above, the polishing pad of the present invention is trimmed 1286097 = can also be manufactured by brazing, please refer to / "Fig. 6", first mention == substrate (step 6〇1), base The type of the material is the same as that of the soil surface, and then the f solder is bonded to the substrate by an adhesive (glhe) or glue (step 602), and the solder may be in the form of a box (f〇ii) or powder. (p〇wder) or a mixture of a powder and an organic binder layer after mixing and rolling, and molding on a substrate = coating of abrasive particles is required The position (or called the drill area), and then the grinding, the particles are arranged on the substrate in the form of abrasive particle clusters (step 6〇4), in order to fix the abrasive particles, the second area of the cloth is coated Secondary adhesive or adhesive, this action can be before or after the abrasive particles, and finally brazed to the top of the button by hard soldering (step is referred to as Figure 3, which is an embodiment of the present invention The polishing pad dresser ΪΪΪΪ. Among them, the diamond particles are composed of a plurality of diamonds ^ ^ ' and a plurality of diamond particle clusters They are placed on the surface of the substrate in a regular arrangement with a fixed spacing.
為進—步朗本發明可確實提高切醉，比較先前 列單鑽以及本發明之規則排列鑽石顆粒蔟 ’取相同尺寸之鑽石顆粒，_具有相 I二3疋位孔間距之磨粒排列模板來製作修整器，並經 二貫驗測得平均城率，其實驗參數與測量結果如表 表一 顆粒粒度 (us mesh) 模板之磨粒 定位孔間距 推論鑽石 間距 單孔落鑽數 (鑽石簇平均顆料 數） 平均 切削率In order to advance, the invention can indeed improve the intoxication, and compares the previously listed single diamonds and the regularly arranged diamond particles of the present invention to take the same size diamond particles, _ the abrasive grain arrangement template having the phase I and 3 3 hole spacings. To make the dresser, and to obtain the average city rate through two tests, the experimental parameters and the measurement results are as shown in Table 1. The particle size (us mesh) template of the abrasive grain positioning hole spacing to infer the diamond spacing single hole drop number (diamond cluster) Average number of particles) average cutting rate
12 128609712 1286097
輩推論鑽石μ距係由模板之磨粒定位孔間距與 所推知，由表—的第—組至第三組結果之可 削率遠大列鑽石顆粒蔟修整器的切 的切削率孔鑽所形成之規則排列單鑽顆粒修整器 粒具之磨料顆粒蔟均勻分佈，使 粒因為勻树各磨料顆粒上，從而避免磨料顆 /白;&不句而產生掉粒的情形，以及使磨料顆粒能均 勻損耗而延長研磨工且的#爾本人了聊孤 3=的磨料顆粒濃度以提升^率 '。配 顆粒數目 料顆粒蔟的規則排列，且藉由磨粒定 心來雜進人孔__數，即雜顆粒蔟的 ㈣之較錄施觸露如上所述，^其並非 所界定者為準 2，_内，當可作些許之更動與ίί = ί:ίί??護範圍須視本說明書所附之申請專利範園 【圖式簡單說明】 3 ·第1圖為本發明實施例之研磨墊修整器之剖面示咅 弟2A圖至第2E圖為本發明實施例之研磨墊修整哭 13 γΐ%6^ 製造流程之剖面示意圖； 第3圖為本發明實施例研磨墊修整器之顯微照片示 意圖； 第4圖為先前技術的隨機排列磨料顆粒之示意圖； 及 第5圖為先前技術的規則排列磨料顆粒之示意圖。 【主要元件符號說明】 100 基材 110 結合劑層 200 鑽石顆粒簇 210 鑽石顆粒 300 磨粒排列模板 310 磨粒定位孔 14The inferential diamond μ distance system is derived from the spacing of the locating holes of the template and the cleavage rate from the first group to the third group of the table - the cutting rate of the diamond granule tamper is cut. The regular arrangement of the single-drill particle dresser granules of the abrasive particles is evenly distributed, so that the granules are evenly averaged on the abrasive particles, thereby avoiding abrasive particles/white; & Uniform loss and prolonged the grinder's #尔本人聊孤3= abrasive particle concentration to increase the rate '. The number of particles is matched with the regular arrangement of the particles, and the particles are entangled into the manhole __ number, that is, the (4) of the particles are as described above, which is not defined. 2, _, when you can make some changes and ίί = ί: ίί?? Scope of protection is subject to the application of the specification attached to this specification [simplified description] 3 · Figure 1 is the grinding of the embodiment of the present invention FIG. 3 is a cross-sectional view showing the manufacturing process of the polishing pad trimming crying 13 γΐ%6^ according to the embodiment of the present invention; FIG. 3 is a micrograph of the polishing pad dresser of the embodiment of the present invention; Photograph; Figure 4 is a schematic representation of prior art randomly aligned abrasive particles; and Figure 5 is a schematic representation of prior art regularly aligned abrasive particles. [Main component symbol description] 100 Substrate 110 Bonder layer 200 Diamond particle cluster 210 Diamond particles 300 Abrasive array template 310 Abrasive positioning hole 14