TWI383860B - Modular dresser - Google Patents

Modular dresser Download PDF

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TWI383860B
TWI383860B TW98136436A TW98136436A TWI383860B TW I383860 B TWI383860 B TW I383860B TW 98136436 A TW98136436 A TW 98136436A TW 98136436 A TW98136436 A TW 98136436A TW I383860 B TWI383860 B TW I383860B
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dresser
bonding
large substrate
substrate
holes
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TW98136436A
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TW201100198A (en
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Chien Min Sung
Ying Tung Chen
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Chien Min Sung
Ying Tung Chen
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Priority to TW98136436A priority Critical patent/TWI383860B/en
Priority to KR1020100057775A priority patent/KR101148934B1/en
Publication of TW201100198A publication Critical patent/TW201100198A/en
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Publication of TWI383860B publication Critical patent/TWI383860B/en

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組合式修整器Combined dresser

本發明係有關一種修整器,尤其是有關CMP拋光墊的組合式修整器及其製法。The present invention relates to a dresser, and more particularly to a combined dresser for a CMP pad and a method of making same.

化學機械拋光(Chemical Mechanical Planarization,CMP)是目前半導體晶圓表面平坦化的製程中最受矚目的技術。在化學機械拋光製程中,拋光墊的功能是將拋光液穩定而均勻地輸送至晶圓與拋光墊之間,在化學蝕刻與機械磨削兩者相互作用下,將晶片上凸出的沈積層移除。Chemical Mechanical Planarization (CMP) is currently the most attractive technology in the process of flattening the surface of semiconductor wafers. In the chemical mechanical polishing process, the function of the polishing pad is to stably and uniformly transfer the polishing liquid between the wafer and the polishing pad, and to deposit a deposition layer on the wafer under the interaction of chemical etching and mechanical grinding. Remove.

為了達到晶圓加工量產的需求及維持品質的穩定性,必須利用鑽石修整器(Diamond dresser)在化學機械拋光的過程中適時地對拋光墊進行修整,除了移除表面之拋光副產物,恢復拋光墊的粗糙面,改善其容納漿料的能力,並恢復拋光墊表面的孔洞及其把持、運送拋光液之能力,如此可以節省拋光墊成本,並可達到晶圓量產時品質穩定的需求。In order to meet the demand for wafer processing and to maintain the stability of the quality, it is necessary to use a diamond dresser to trim the polishing pad in a timely manner during the chemical mechanical polishing process, except to remove the polishing by-products of the surface. The rough surface of the polishing pad improves its ability to hold the slurry and restores the pores on the surface of the polishing pad and its ability to hold and transport the polishing liquid. This saves the cost of the polishing pad and meets the requirements for stable quality during wafer mass production. .

傳統的鑽石修整器是將平均粒徑的鑽石粒固定在金屬盤上,這種鑽石修整器適合修整硬式的拋光墊(如IC1000等)。傳統修整器的功能不僅要移除拋光晶圓時產生的廢料,更進一步的需要切削一層拋光墊,使拋光墊恢復一定的粗糙度,但是這種傳統類型的鑽石修整器並不適用於45奈米(nm)以下的CMP製程。由於積體電路的線寬日趨微小,例如2006年開始執行65奈米(nm)的製程,晶圓表面平坦化及平滑度的要求就越來越高,相對修整拋光墊的修整器要求也愈來愈高。預計於2010年之45nm的製程,必須以極低的壓力進行拋光才能避免磨穿奈米級的銅線及脆弱的低介電常數(Low K)電阻層。因此修整後的拋光墊需要更高的平整性,且需配合大尺吋晶圓之需求重新設計。未來的鑽石修整器除了修整器之鑽石顆粒分佈規則外,尖錐的頂點高度(Leveling)要求也更高;除此之外,修整器也需要在拋光墊上刻劃出更細微更均勻的刻紋,但相反的,修整器對拋光墊的移除率更低,這樣的要求是傳統修整器無法做到的。The traditional diamond dresser is to fix the average particle size of the diamond particles on a metal plate. This diamond dresser is suitable for trimming hard polishing pads (such as IC1000). The function of the traditional dresser is not only to remove the waste generated when polishing the wafer, but also to cut a polishing pad to restore the roughness of the polishing pad, but this traditional type of diamond dresser is not suitable for 45 CMP process below m (nm). Due to the increasingly small line width of integrated circuits, such as the 65 nm process started in 2006, the wafer surface flattening and smoothness requirements are getting higher and higher, and the trimmer requirements for dressing polishing pads are getting higher. The higher the coming. It is expected that the 45nm process in 2010 must be polished at very low pressure to avoid wear through the nano-scale copper wire and the fragile low dielectric constant (Low K) resistance layer. Therefore, the trimmed polishing pad requires higher flatness and needs to be redesigned to meet the needs of large-size wafers. In addition to the diamond particle distribution rules of the dresser, the future diamond dresser has higher requirements for the leveling of the tip; in addition, the dresser needs to engrave a finer and more uniform engraving on the polishing pad. However, on the contrary, the dresser has a lower removal rate of the polishing pad, which is not possible with conventional dressers.

有各種不同修整器的專利,例如台灣專利I228066揭示一種研磨布用修整器及其使用之研磨布的修整方法,包括一金屬台設置有調節機構,以調節全部或一部分的磨石顆粒群中以多數個磨石顆粒的前端所分別形成的基準面的高低差。Patent application No. 1,228,066 discloses a dressing device for a polishing cloth and a dressing method for the polishing cloth used therefor, comprising a metal table provided with an adjusting mechanism for adjusting all or a part of the group of grindstone particles. The height difference of the reference plane formed by the front ends of the majority of the grindstone particles.

台灣公開專利200821093揭示的鑽石修整器,包括在各鑽石砥粒黏接部上,各自黏接有不同種類的鑽石砥粒,鑽石砥粒黏接部與修整器基板之間是藉由螺栓固定或黏接劑固定。The diamond dresser disclosed in Taiwan Patent Publication No. 200821093 includes a different type of diamond enamel adhered to each diamond enamel bonding portion, and the diamond 黏 particle bonding portion and the dresser substrate are fixed by bolts or The adhesive is fixed.

美國專利US6,054,183、揭示的修整器,是在一基板上形成複數鑽石粒及一層CVD鑽石;複數鑽石粒被CVD鑽石包覆而被固定於基板表面。A trimmer disclosed in U.

國際專利公開號WO00/64630,揭示一研磨層包括多數磨粒,該磨粒包含有機樹脂(Organic resin)、金屬鹽(Metal salt)及平均散佈於多數磨粒之間的鑽石磨粒。International Patent Publication No. WO 00/64630 discloses that an abrasive layer comprises a plurality of abrasive particles comprising an organic resin, a metal salt and diamond abrasive particles interspersed between a plurality of abrasive particles.

美國公開專利US20060128288揭示的修整器,包括多數鑽石顆粒被一金屬黏結劑層固定於一金屬基板。A finisher disclosed in U.S. Patent No. 2,060,128,288, which includes a plurality of diamond particles fixed to a metal substrate by a metal bond layer.

日本公開專利JP2006-315088揭示的修整器,包括一圓盤狀基台結合多數圓形的PCD鑽石片。The finisher disclosed in Japanese Laid-Open Patent Publication No. JP2006-315088 includes a disk-shaped abutment combined with a plurality of circular PCD diamond pieces.

一般修整器的直徑約是108公毫米(mm)的大盤子,因為面積大所以變形量也大,較不容易結合各種不同大小、形狀、材料的磨粒,且使多數研磨顆粒的頂點在同一高度,且大面積的修整器的價錢較高。Generally, the size of the dresser is about 108 mm (mm). Because the area is large, the amount of deformation is large. It is not easy to combine abrasive grains of various sizes, shapes and materials, and the apexes of most abrasive particles are the same. The height and the large area of the dresser are higher.

為了使較大面積的修整器更容易結合各種不同大小、形狀、材料的磨粒,且使多數研磨顆粒的頂點在同一高度,而提出本發明。The present invention has been proposed in order to make it easier for a larger area finisher to incorporate abrasive grains of various sizes, shapes, materials, and to have the apexes of a plurality of abrasive particles at the same height.

本發明的主要目的,在提供一種組合式修整器,使一大基板的同一研磨端面結合多數具有磨粒的小基板,較容易使多數磨粒的切削端在同一高度,且更容易結合各種不同大小、形狀、材料的磨粒。SUMMARY OF THE INVENTION A primary object of the present invention is to provide a combined dresser in which a same polishing end surface of a large substrate is combined with a plurality of small substrates having abrasive grains, which makes it easier to make the cutting ends of a plurality of abrasive grains at the same height, and is easier to combine various types. Abrasive particles of size, shape and material.

本發明的其他目的、功效,請參閱圖式及實施例,詳細說明如下。For other purposes and functions of the present invention, please refer to the drawings and the embodiments, which are described in detail below.

如圖1、2所示,本發明第一實施例的組合式整修器1,尤其是作為CMP拋光墊的修整器者,包括一大基板11及複數研磨單元12所組成。As shown in FIGS. 1 and 2, the combined refiner 1 of the first embodiment of the present invention, particularly as a dresser for a CMP pad, comprises a large substrate 11 and a plurality of polishing units 12.

如圖2所示,大基板11設有一結合面110、底面111及對應於複數研磨單元12的複數穿透孔112;複數穿透孔112分別容置複數研磨單元12,複數研磨單元12突出結合面110;複數研磨單元12與大基板11之間藉由結合劑13固定結合。As shown in FIG. 2, the large substrate 11 is provided with a bonding surface 110, a bottom surface 111, and a plurality of penetration holes 112 corresponding to the plurality of polishing units 12; the plurality of penetration holes 112 respectively accommodate the plurality of polishing units 12, and the plurality of polishing units 12 are protruded and combined. The surface 110; the plurality of polishing units 12 and the large substrate 11 are fixedly bonded by a bonding agent 13.

複數研磨單元12分別包括一小基板120及複數磨粒121;小基板120的一面122結合複數磨粒121;磨粒121具有一可對一工件進行切削的切削端123;小基板120相對於設有該複數磨粒121的另一面124與大基板11的底面111約在同一基準平面14。大基板11形成複數穿透孔112的複數內壁113與複數研磨單元12的複數外壁125分別具有複數凹凸結構114、126。當結合劑13滲入複數凹凸結構114、126內,分別固化結合複數內壁113、複數外壁125後,將使大基板11與複數研磨單元12的結合更穩固,在研磨作業中複數研磨單元12相對於大基板11無法垂直移動,因此更不會脫離大基板11。複數內壁113、複數外壁125中也可均不設複數凹凸結構114、126,或僅其中一者設複數凹凸結構114、126。The plurality of polishing units 12 respectively include a small substrate 120 and a plurality of abrasive grains 121; one surface 122 of the small substrate 120 is combined with a plurality of abrasive grains 121; the abrasive grains 121 have a cutting end 123 capable of cutting a workpiece; and the small substrate 120 is opposite to the substrate The other surface 124 of the plurality of abrasive grains 121 is on the same reference plane 14 as the bottom surface 111 of the large substrate 11. The plurality of inner walls 113 of the large substrate 11 forming the plurality of penetration holes 112 and the plurality of outer walls 125 of the plurality of polishing units 12 respectively have a plurality of concave and convex structures 114, 126. When the bonding agent 13 is infiltrated into the plurality of concave-convex structures 114, 126, respectively, after bonding the plurality of inner walls 113 and the plurality of outer walls 125, the combination of the large substrate 11 and the plurality of polishing units 12 is more stable, and the plurality of polishing units 12 are relatively opposed in the grinding operation. Since the large substrate 11 cannot be vertically moved, it is not separated from the large substrate 11. The plurality of concave and convex structures 114 and 126 may not be provided in the plurality of inner walls 113 and the plurality of outer walls 125, or only one of the plurality of concave and convex structures 114 and 126 may be provided.

如圖1所示,大基板11的複數穿透孔112與複數研磨單元12的剖面可為圓形或多邊形,例如正方形等形狀。As shown in FIG. 1, the cross section of the plurality of penetration holes 112 and the plurality of grinding units 12 of the large substrate 11 may be circular or polygonal, such as a square or the like.

本實施例的複數研磨單元12分別比大基板11高,藉由複數研磨單元12的高度,決定複數磨粒121的複數切削端123突出大基板11的結合面110的高度。複數切削端123突出大基板11的高度差異在20微米內,使複數切削端123與一平面15的高度差異在20微米內。複數切削端123突出大基板11的結合面110的高度為0.05-5毫米。The plurality of polishing units 12 of the present embodiment are higher than the large substrate 11, and the height of the plurality of polishing units 12 determines the height of the plurality of cutting ends 123 of the plurality of abrasive grains 121 protruding from the bonding surface 110 of the large substrate 11. The difference in height of the plurality of cutting ends 123 protruding from the large substrate 11 is within 20 microns, so that the difference in height between the plurality of cutting ends 123 and a plane 15 is within 20 microns. The plurality of cutting ends 123 protrude from the joint surface 110 of the large substrate 11 to a height of 0.05 to 5 mm.

如圖2、3所示,本發明第二實施例的組合式整修器2與上述第一實施例的組合式修整器1的結構相比較,除了大基板21的複數穿透孔212呈錐狀,其孔徑為上寬下窄,其內壁213的傾斜角度為1度至15度的形狀不同外,其餘結構大致相同。大基板21設有一結合面210、底面211及對應於複數研磨單元12的複數穿透孔212,大基板21形成複數穿透孔212的複數內壁213也具有與複數凹凸結構126相對的複數凹凸結構214;複數研磨單元12分別置於複數穿透孔112的內,複數磨粒121的另一面124分別卡固的嵌入複數穿透孔212孔徑較窄的下端,且與底面211在同一基準平面14,再藉由結合劑22固定結合。在研磨作業中複數研磨單元12受壓力時要避免垂直移動,複數穿透孔212呈錐狀的目的是要使複數研磨單元12受壓力時,無法往複數穿透孔212錐度小的那一邊移動而更加牢固。複數內壁213、複數外壁125中也可均不設複數凹凸結構214、126,或僅其中一者設複數凹凸結構214、126。As shown in FIGS. 2 and 3, the combined dresser 2 of the second embodiment of the present invention is compared with the structure of the combined dresser 1 of the first embodiment described above, except that the plurality of penetration holes 212 of the large substrate 21 are tapered. The aperture is upper and lower, and the inner wall 213 has a different inclination angle of 1 to 15 degrees, and the rest of the structure is substantially the same. The large substrate 21 is provided with a bonding surface 210, a bottom surface 211 and a plurality of penetration holes 212 corresponding to the plurality of polishing units 12, and the plurality of inner walls 213 of the large substrate 21 forming the plurality of penetration holes 212 also have a plurality of concave and convex portions opposite to the plurality of concave and convex structures 126. Structure 214; the plurality of grinding units 12 are respectively disposed in the plurality of penetration holes 112, and the other surfaces 124 of the plurality of abrasive grains 121 are respectively embedded in the lower end of the plurality of penetration holes 212 having a narrow aperture, and are in the same reference plane as the bottom surface 211 14. The binding is then fixed by the bonding agent 22. In the grinding operation, the plurality of grinding units 12 are prevented from moving vertically when subjected to pressure, and the plurality of penetrating holes 212 are tapered so that when the plurality of grinding units 12 are subjected to pressure, the side of the small number of the penetrating holes 212 cannot be reciprocated. And more solid. The plurality of concave and convex structures 214 and 126 may not be provided in the plurality of inner walls 213 and the plurality of outer walls 125, or only one of the plurality of concave and convex structures 214 and 126 may be provided.

如圖2、4A、4B所示,本發明第三實施例的組合式整修器3與上述第一實施例的組合式修整器1的結構相比較,除了複數研磨單元31分別比大基板11短,且藉由一模板32的厚度控制複數研磨單元31突出大基板11的結合面110的高度不同外,其餘結構大致相同。複數研磨單元31也由複數小基板310結合複數磨粒311所組成;小基板310的一面312結合複數磨粒311;磨粒311具有一可對一工件進行切削的切削端313;小基板310相對於設有複數磨粒311的另一面314置於大基板11的穿透孔112內,另一面314高於底面111;結合劑13封閉大基板11的底面111的穿透孔112。大基板11形成複數穿透孔112的複數內壁113與複數研磨單元31的複數外壁315分別具有相對的複數凹凸結構114、316。複數內壁213、複數外壁315中也可均不設複數凹凸結構214、316,或僅其中一者設複數凹凸結構214、316。模板232可為金屬板。As shown in Figs. 2, 4A and 4B, the combined dresser 3 of the third embodiment of the present invention is compared with the structure of the combined dresser 1 of the first embodiment described above, except that the plurality of grinding units 31 are shorter than the large substrate 11, respectively. The other structures are substantially the same except that the height of the bonding surface 31 of the large substrate 11 is different by controlling the thickness of the template 32 to control the plurality of polishing units 31. The plurality of grinding units 31 are also composed of a plurality of small substrates 310 combined with a plurality of abrasive grains 311; one side 312 of the small substrate 310 is combined with a plurality of abrasive grains 311; the abrasive grains 311 have a cutting end 313 capable of cutting a workpiece; The other surface 314 provided with the plurality of abrasive grains 311 is placed in the penetration hole 112 of the large substrate 11, and the other surface 314 is higher than the bottom surface 111; the bonding agent 13 closes the penetration hole 112 of the bottom surface 111 of the large substrate 11. The plurality of inner walls 113 of the large substrate 11 forming the plurality of penetration holes 112 and the plurality of outer walls 315 of the plurality of polishing units 31 respectively have opposite complex concave and convex structures 114, 316. The plurality of concave-convex structures 214 and 316 may not be provided in the plurality of inner walls 213 and the plurality of outer walls 315, or only one of the plurality of concave-convex structures 214 and 316 may be provided. The template 232 can be a metal plate.

如圖4B所示,本實施例製作時,係使模板32結合大基板11,將複數研磨單元31的切削端313分別穿過大基板11的複數穿透孔112及穿入模板32,利用模板32的厚度控制複數研磨單元31的突出量,再由大基板11的複數穿透孔112注入結合劑13,使大基板11固定結合複數研磨單元31,然後再使模板32脫離大基板11,形成如圖4A所示的組合式修整器3。As shown in FIG. 4B, in the embodiment, the template 32 is combined with the large substrate 11, and the cutting ends 313 of the plurality of polishing units 31 are respectively passed through the plurality of penetration holes 112 of the large substrate 11 and the template 32, and the template 32 is used. The thickness controls the amount of protrusion of the plurality of polishing units 31, and then the bonding agent 13 is injected from the plurality of penetration holes 112 of the large substrate 11, the large substrate 11 is fixedly coupled to the plurality of polishing units 31, and then the template 32 is detached from the large substrate 11, forming The combined dresser 3 shown in Figure 4A.

如圖2、5所示,本發明第四實施例的組合式整修器4與上述第一實施例的組合式修整器1的結構相比較,除了大基板41設有複數容置槽411取代大基板11的複數穿透孔112外,其餘結構大致相同。且大基板41形成複數容置槽411的複數內壁412也具有複數凹凸結構413;大基板41的複數容置槽411分別容置複數研磨單元12,複數研磨單元12突出結合面410;複數研磨單元12與大基板11之間藉由結合劑13固定結合。小基板120相對於設有該複數磨粒121的另一面124分別與大基板41的形成複數容置槽411底部的複數底壁414在同一基準平面14。As shown in FIG. 2 and FIG. 5, the combined refiner 4 of the fourth embodiment of the present invention is compared with the structure of the combined dresser 1 of the first embodiment, except that the large substrate 41 is provided with a plurality of accommodating slots 411 instead of The plurality of through holes 112 of the substrate 11 are substantially the same except for the plurality of penetrating holes 112. The plurality of inner walls 412 of the large substrate 41 forming the plurality of accommodating grooves 411 also have a plurality of concave and convex structures 413; the plurality of accommodating grooves 411 of the large substrate 41 respectively accommodate the plurality of polishing units 12, and the plurality of polishing units 12 protrude from the bonding surface 410; The unit 12 and the large substrate 11 are fixedly bonded by a bonding agent 13. The small substrate 120 is on the same reference plane 14 as the plurality of bottom walls 414 of the large substrate 41 forming the bottom of the plurality of receiving grooves 411 with respect to the other surface 124 on which the plurality of abrasive grains 121 are provided.

如圖5、6所示,本發明第五實施例的組合式整修器5與上述第四實施例的組合式修整器4的結構相比較,除了大基板51的複數容置槽511的槽徑較大基板41的複數容置槽411的槽徑小,且略小於小基板120的外徑之外,其餘結構大致相同。大基板51的複數容置槽511分別容置複數研磨單元12;複數研磨單元12與大基板11之間藉由緊配結合的方式固定結合。本實施例是將研磨單元12以機械力擠壓入金屬製的大基板51的容置槽511內,利用凹凸結構的變形量固定研磨單元12,最後也可以再用結合劑將空隙補滿。As shown in FIGS. 5 and 6, the combined dresser 5 of the fifth embodiment of the present invention is compared with the structure of the combined dresser 4 of the fourth embodiment, except for the groove of the plurality of receiving grooves 511 of the large substrate 51. The plurality of accommodating grooves 411 of the larger substrate 41 have a small groove diameter and are slightly smaller than the outer diameter of the small substrate 120, and the remaining structures are substantially the same. The plurality of accommodating grooves 511 of the large substrate 51 respectively accommodate the plurality of polishing units 12; the plurality of polishing units 12 and the large substrate 11 are fixedly coupled by tight fitting. In the present embodiment, the polishing unit 12 is mechanically pressed into the accommodating groove 511 of the large metal substrate 51, and the polishing unit 12 is fixed by the deformation amount of the uneven structure. Finally, the gap can be filled with the bonding agent.

如圖5、7所示,本發明第六實施例的組合式整修器6與上述第四實施例的組合式修整器4的結構相比較,除了大基板61的複數容置槽611的深度較大基板41的複數容置槽411的深度長,且大於小基板120的高度之外,其餘結構大致相同。大基板61的複數容置槽611分別容置複數研磨單元12;複數研磨單元12與大基板61之間藉由結合劑13固定結合。複數小基板120相對於設有該複數磨粒121的另一面124分別與大基板61的形成複數容置槽611底部的複數底壁612有一段距離;結合劑13分別填充於複數磨粒121的另一面124與複數底壁612之間。As shown in FIGS. 5 and 7, the combined dresser 6 of the sixth embodiment of the present invention is compared with the structure of the combined dresser 4 of the fourth embodiment described above, except that the depth of the plurality of receiving grooves 611 of the large substrate 61 is smaller. The depth of the plurality of accommodating grooves 411 of the large substrate 41 is longer than the height of the small substrate 120, and the remaining structures are substantially the same. The plurality of accommodating grooves 611 of the large substrate 61 respectively accommodate the plurality of polishing units 12; the plurality of polishing units 12 and the large substrate 61 are fixedly coupled by the bonding agent 13. The plurality of small substrates 120 are spaced apart from the other bottom surface 612 of the large substrate 61 forming the bottom of the plurality of receiving grooves 611 with respect to the other surface 124 provided with the plurality of abrasive grains 121; the bonding agent 13 is filled in the plurality of abrasive grains 121, respectively. The other side 124 is between the plurality of bottom walls 612.

如圖3、8所示,本發明第七實施例的組合式整修器7與上述第二實施例的組合式修整器2的結構相比較,除了大基板71設有複數容置槽711取代大基板21的複數穿透孔212外,其餘結構大致相同。且複數容置槽711的槽徑為上寬下窄的形狀,其內壁713的傾斜角度為1度至15度;該小基板120相對於設有該複數磨粒121的另一面124分別卡固的嵌入該複數容置槽711的槽徑較窄的下端,複數研磨單元12突出結合面710;大基板71形成複數容置槽711的複數內壁713也具有複數凹凸結構714;複數研磨單元12與大基板71之間藉由結合劑22固定結合。小基板120相對於設有該複數磨粒121的另一面124分別與大基板71的形成複數容置槽711底部的複數底壁715在同一基準平面14。As shown in FIGS. 3 and 8, the combined dresser 7 of the seventh embodiment of the present invention is compared with the structure of the combined dresser 2 of the second embodiment, except that the large substrate 71 is provided with a plurality of receiving grooves 711 instead of the large one. The plurality of through holes 212 of the substrate 21 are substantially the same except for the plurality of penetrating holes 212. The groove diameter of the plurality of accommodating grooves 711 is an upper width and a narrower shape, and the inner wall 713 has an inclination angle of 1 to 15 degrees; the small substrate 120 is respectively opposed to the other surface 124 provided with the plurality of abrasive grains 121. The plurality of polishing units 12 are protruded from the lower end of the plurality of accommodating grooves 711, and the plurality of polishing units 12 protrude from the bonding surface 710; the plurality of inner walls 713 of the large substrate 71 forming the plurality of accommodating grooves 711 also have a plurality of concave and convex structures 714; 12 is fixedly bonded to the large substrate 71 by the bonding agent 22. The small substrate 120 is on the same reference plane 14 as the plurality of bottom walls 715 of the large substrate 71 forming the bottom of the plurality of receiving grooves 711 with respect to the other surface 124 on which the plurality of abrasive grains 121 are provided.

如圖9所示,本發明第八實施例的組合式整修器8,包括一大基板81及複數研磨單元82所組成,其大基板81及複數研磨單元82利用結合劑83結合或緊配結合的結構,可分別如前述本發明第一至七實施例的組合式整修器1、2、3、4、5、6、7所示者。本實施例的大基板81周緣內側設有等間隔環狀排列的8個研磨單元82,且間隔環狀排列的8個研磨單元82的內側設有等間隔排列的4個研磨單元82。本實施例複數研磨單元82特殊的排列方式可避開大基板81下端面設置的螺孔。As shown in FIG. 9, the combined refiner 8 of the eighth embodiment of the present invention comprises a large substrate 81 and a plurality of polishing units 82. The large substrate 81 and the plurality of polishing units 82 are bonded or tightly bonded by a bonding agent 83. The structure may be as shown in the above-described combined dressers 1, 2, 3, 4, 5, 6, and 7 of the first to seventh embodiments of the present invention, respectively. The inner side of the large substrate 81 of the present embodiment is provided with eight polishing units 82 arranged at equal intervals in a ring shape, and four polishing units 82 arranged at equal intervals are provided inside the eight polishing units 82 arranged in a ring shape. In this embodiment, the plurality of polishing units 82 are arranged in a special manner to avoid the screw holes provided in the lower end surface of the large substrate 81.

本發明的磨粒的材料可為人造或非人造鑽石、多晶鑽石(PCD)、立方晶氮化硼(CBN)、多晶立方氮化硼(PCBN)、最硬結晶體、多晶材料、或上述材料的混合材料等所組成。本發明的磨粒可以利用高溫高壓結合、硬焊、燒結、電鍍、塑膠膠合或陶瓷結合等方法結合小基板。The material of the abrasive particles of the present invention may be artificial or non-artificial diamond, polycrystalline diamond (PCD), cubic boron nitride (CBN), polycrystalline cubic boron nitride (PCBN), hardest crystal, polycrystalline material, or The above materials are composed of a mixed material or the like. The abrasive grains of the present invention can be combined with small substrates by means of high temperature and high pressure bonding, brazing, sintering, electroplating, plastic bonding or ceramic bonding.

本發明的大基板的材料包含金屬、金屬合金、塑膠材料(Polymer)、陶製品、碳製品、及上述材料的混合物,以316L不銹鋼材料為佳。The material of the large substrate of the present invention comprises a metal, a metal alloy, a plastic material, a ceramic product, a carbon product, and a mixture of the above materials, preferably 316L stainless steel material.

本發明的結合劑的材料包含金屬、金屬合金、塑膠材料(Polymer)、陶瓷材料、及上述材料的混合物,其中以塑膠材料為實施例代表,此外也可包含焊接合金材料。The material of the bonding agent of the present invention comprises a metal, a metal alloy, a plastic material, a ceramic material, and a mixture of the above materials, wherein the plastic material is representative of the embodiment, and a solder alloy material may also be included.

本發明的大基板可為圓盤狀,直徑約90-120毫米(mm)。小基板可為圓盤狀,直徑約10-30毫米,以20毫米較佳。磨粒的大小為100-500微米(micron),以160-200微米較佳。本發明大基板的較佳實施例為不銹鋼材質;結合劑的較佳實施例可為樹脂材料;磨粒與小基板固定方式的較佳實施例可藉由樹脂膠合或藉由含有鉻、鈦的銅鋅合金結合;小基板的外表面有一含鎳的電鍍層。The large substrate of the present invention may be in the shape of a disk having a diameter of about 90 to 120 millimeters (mm). The small substrate may be in the shape of a disk having a diameter of about 10 to 30 mm and preferably 20 mm. The size of the abrasive particles is from 100 to 500 micrometers, preferably from 160 to 200 micrometers. The preferred embodiment of the large substrate of the present invention is made of stainless steel; the preferred embodiment of the bonding agent may be a resin material; the preferred embodiment of the method of fixing the abrasive particles to the small substrate may be by resin bonding or by containing chromium or titanium. The copper-zinc alloy is bonded; the outer surface of the small substrate has a nickel-containing plating layer.

本發明利用組合式的方法,先製作複數研磨單元,小的研磨單元較容易使多數磨粒的切削端在同一高度,再使一大基板結合複數研磨單元成為一大面積的組合式修整器,較容易使大面積組合式修整器的多數磨粒的切削端在同一高度。本發明的優點是製作小的研磨單元成本較低,且組合式修整器可視需要變化不同的磨粒,例如組合式修整器的外圈可以用粒度較大的鑽石,內圈可以用粒度較小的鑽石;或是外圈可以用切削能力差,但較耐磨,晶形完整的鑽石,內圈可以用切削能力好,但是不耐磨,晶形較不好的鑽石。同一小研磨單元的鑽石顆粒大小、形狀、材料相同,但組合式修整器內的複數研磨單元的鑽石顆粒大小、形狀、材料可相同或不相同。利用複數研磨單元組合成一較大的組合式修整器,可控制組合式修整器的切削速度及磨耗率。The invention utilizes a combined method to first make a plurality of grinding units. The small grinding unit is relatively easy to make the cutting ends of the plurality of abrasive grains at the same height, and then the large substrate is combined with the plurality of grinding units to form a large-area combined dresser. It is easier to make the cutting ends of the majority of the abrasive particles of the large area combined dresser at the same height. The invention has the advantages that the manufacturing of the small grinding unit is low in cost, and the combined dresser can change different abrasive grains as needed. For example, the outer ring of the combined dresser can use a larger size diamond, and the inner ring can be made smaller in size. Diamonds; or the outer ring can be used with poor cutting ability, but more wear-resistant, crystal-shaped diamonds, the inner ring can be used with good cutting ability, but not wear-resistant, crystal-shaped diamonds. The diamond particles of the same small grinding unit have the same size, shape and material, but the diamond particles of the plurality of grinding units in the combined dresser may have the same or different diamond size, shape and material. By combining a plurality of grinding units into a larger combined dresser, the cutting speed and wear rate of the combined dresser can be controlled.

以上所記載,僅為利用本發明技術內容之實施例,任何熟悉本項技藝者運用本發明所為之修飾、變化,皆屬本發明主張之專利範圍,而不限於實施例所揭示者。The above description is only for the embodiments of the present invention, and any modifications and variations made by those skilled in the art using the present invention are the scope of the invention claimed, and are not limited to the embodiments disclosed.

1、2、3、4、5、6、7、8...組合式修整器1, 2, 3, 4, 5, 6, 7, 8. . . Combined dresser

11、21、41、51、61、71、81...大基板11, 21, 41, 51, 61, 71, 81. . . Large substrate

110、210、410、710...結合面110, 210, 410, 710. . . Joint surface

111、211...底面111, 211. . . Bottom

112、212...穿透孔112, 212. . . Penetrating hole

113、213、412、713...內壁113, 213, 412, 713. . . Inner wall

114、214、126、316、413、714...凹凸結構114, 214, 126, 316, 413, 714. . . Concave structure

12、31、82...研磨單元12, 31, 82. . . Grinding unit

120、310...小基板120, 310. . . Small substrate

121、311...磨粒121, 311. . . Abrasive grain

122、312...面122, 312. . . surface

123、313...切削端123, 313. . . Cutting end

124、314...另一面124, 314. . . the other side

125、315...外壁125, 315. . . Outer wall

13、22、83...結合劑13, 22, 83. . . Binding agent

14...基準平面14. . . Datum plane

15...平面15. . . flat

32...模板32. . . template

411、511、611、711...容置槽411, 511, 611, 711. . . Locating slot

414、612、715...底壁414, 612, 715. . . Bottom wall

圖1為本發明第一實施例的組合式修整器的示意圖。1 is a schematic view of a combined dresser according to a first embodiment of the present invention.

圖2為圖1的AA剖面的示意圖。FIG. 2 is a schematic view of the AA cross section of FIG. 1. FIG.

圖3為本發明第二實施例的組合式修整器的剖面示意圖。3 is a schematic cross-sectional view of a combined dresser in accordance with a second embodiment of the present invention.

圖4A為本發明第三實施例的組合式修整器的剖面示意圖。4A is a schematic cross-sectional view of a combined dresser in accordance with a third embodiment of the present invention.

圖4B製作為本發明第三實施例的組合式修整器的示意圖。4B is a schematic view showing a combined dresser according to a third embodiment of the present invention.

圖5為本發明第四實施例的組合式修整器的示意圖。Figure 5 is a schematic view of a combined dresser in accordance with a fourth embodiment of the present invention.

圖6為本發明第五實施例的組合式修整器的剖面示意圖。Figure 6 is a cross-sectional view showing a combined dresser in accordance with a fifth embodiment of the present invention.

圖7為本發明第六實施例的組合式修整器的剖面示意圖。Figure 7 is a cross-sectional view showing a combined dresser according to a sixth embodiment of the present invention.

圖8為本發明第七實施例的組合式修整器的剖面示意圖。Figure 8 is a cross-sectional view showing a combined dresser in accordance with a seventh embodiment of the present invention.

圖9為本發明第八實施例的組合式修整器的剖面示意圖。Figure 9 is a cross-sectional view showing a combined dresser in accordance with an eighth embodiment of the present invention.

1...組合式修整器1. . . Combined dresser

11...大基板11. . . Large substrate

110...結合面110. . . Joint surface

111...底面111. . . Bottom

112...穿透孔112. . . Penetrating hole

113...內壁113. . . Inner wall

114、126...凹凸結構114, 126. . . Concave structure

12...研磨單元12. . . Grinding unit

120...小基板120. . . Small substrate

121...磨粒121. . . Abrasive grain

122...面122. . . surface

123...切削端123. . . Cutting end

124...另一面124. . . the other side

125...外壁125. . . Outer wall

13...結合劑13. . . Binding agent

14...基準平面14. . . Datum plane

15...平面15. . . flat

Claims (22)

一種組合式修整器,是作為CMP拋光墊的修整器者,包括:一大基板,設有一結合面、一底面及複數穿透孔或複數容置槽其中之一者;該複數穿透孔呈錐狀,該複數穿透孔的孔徑為上寬下窄的形狀;該複數容置槽呈錐狀,該複數容置槽的槽徑為上寬下窄的形狀;複數研磨單元,分別具有複數磨粒;該複數磨粒分別具有複數切削端;該複數研磨單元分別具有一小基板;該複數小基板的一面分別設有該複數磨粒;其中該複數小基板相對於設有該複數磨粒的另一面,分別卡固的嵌入該複數穿透孔的孔徑較窄的下端或分別卡固的嵌入該複數容置槽的槽徑較窄的下端其中之一,使該複數穿透孔或該複數容置槽其中之一者分別容置該複數研磨單元,該複數切削端分別突出該結合面;該複數研磨單元與該大基板之間藉由結合劑結合或緊配結合其中之一者固定結合;該複數磨粒的複數切削端分別與一平面的高度差異在20微米內。 A combined dresser, which is a trimmer for a CMP polishing pad, comprising: a large substrate, which is provided with a bonding surface, a bottom surface, and a plurality of through holes or a plurality of receiving grooves; the plurality of through holes are In the shape of a cone, the aperture of the plurality of through holes is a shape of an upper width and a lower width; the plurality of accommodating grooves have a tapered shape, and a groove diameter of the plurality of accommodating grooves is a shape of an upper width and a lower width; and the plurality of grinding units respectively have a plurality of shapes The plurality of abrasive grains respectively have a plurality of cutting ends; the plurality of grinding units respectively have a small substrate; and the plurality of small substrates are respectively provided with the plurality of abrasive grains; wherein the plurality of small substrates are opposite to the plurality of abrasive grains The other side of the lower end of the plurality of apertures that are embedded in the plurality of through holes or the one of the lower ends of the plurality of slots that are respectively embedded in the plurality of receiving slots, so that the plurality of through holes or the plurality of holes One of the plurality of accommodating grooves respectively accommodating the plurality of grinding units, wherein the plurality of cutting ends respectively protrude the bonding surface; and the plurality of grinding units and the large substrate are fixed by bonding or tightly bonding one of the bonding materials Combine A plurality of abrasive grains and a plurality of end cutting plane height differences within 20 microns, respectively. 如申請專利範圍第1項所述之組合式修整器,其中該大基板設有複數穿透孔;該小基板相對於設有該複數磨粒的另一面分別與該大基板的該底面在同一基準平面。 The combination dresser of claim 1, wherein the large substrate is provided with a plurality of through holes; the small substrate is identical to the bottom surface of the large substrate with respect to the other surface on which the plurality of abrasive grains are provided Datum plane. 如申請專利範圍第1項所述之組合式修整器,其中該大基板設有複數容置槽;該小基板相對於設有該複數磨粒的另一面分別與該大基板的形成該複數容置槽底部的複數底壁在同一基準平面。 The combined dresser of claim 1, wherein the large substrate is provided with a plurality of accommodating grooves; and the small substrate forms the complex volume with the large substrate with respect to the other surface on which the plurality of abrasive grains are provided The bottom walls of the bottom of the groove are in the same reference plane. 如申請專利範圍第1項所述之組合式修整器,其中該大基板形成該複數穿透孔的複數內壁的傾斜角度為1度至15度。 The combination dresser of claim 1, wherein the large substrate forms a plurality of inner walls of the plurality of penetration holes at an inclination angle of 1 to 15 degrees. 如申請專利範圍第1項所述之組合式修整器,其中該大基板形成該複數容置槽的複數內壁的傾斜角度為1度至15度。 The combined dresser of claim 1, wherein the large substrate forms a plurality of inner walls of the plurality of receiving grooves at an inclination angle of 1 to 15 degrees. 如申請專利範圍第1至第5項中任一項所述之組合式修整器,其中該大基板形成該複數穿透孔或該複數容置槽其中之一者的複數內壁與該複數研磨單元的複數外壁中至少有一具有複數凹凸結構。 The combination dresser according to any one of the preceding claims, wherein the large substrate forms a plurality of inner walls of the plurality of through holes or one of the plurality of receiving grooves and the plurality of grinding At least one of the plurality of outer walls of the unit has a plurality of concave and convex structures. 如申請專利範圍第6項所述之組合式修整器,其中該大基板的材料包含金屬、金屬合金、塑膠材料、陶製品、碳製品、及上述材料的混合其中之一者。 The combination dresser of claim 6, wherein the material of the large substrate comprises one of a metal, a metal alloy, a plastic material, a ceramic product, a carbon product, and a mixture of the above materials. 如申請專利範圍第7項所述之組合式修整器,其中該大基板的材料是316L不銹鋼材料。 The combination dresser of claim 7, wherein the material of the large substrate is 316L stainless steel. 如申請專利範圍第8項所述之組合式修整器,其中該複數磨粒與該小基板是藉由高溫高壓結合、硬焊、燒結、電鍍、塑膠膠合或陶瓷結合其中之一者固定結合。 The combination dresser of claim 8, wherein the plurality of abrasive particles and the small substrate are fixedly bonded by one of high temperature and high pressure bonding, brazing, sintering, electroplating, plastic bonding or ceramic bonding. 如申請專利範圍第9項所述之組合式修整器,其中該大基板為圓盤狀,直徑為90-120毫米。 The combination dresser of claim 9, wherein the large substrate is disc-shaped and has a diameter of 90-120 mm. 如申請專利範圍第10項所述之組合式修整器,其中該小基板為圓盤狀,直徑為10-30毫米。 The combination dresser of claim 10, wherein the small substrate is disc-shaped and has a diameter of 10-30 mm. 如申請專利範圍第11項所述之組合式修整器,其中該磨粒的大小為100-500微米。 The combination dresser of claim 11, wherein the abrasive particles have a size of from 100 to 500 microns. 如申請專利範圍第12項所述之組合式修整器,其中該磨粒的大小為160-200微米。 The combination dresser of claim 12, wherein the abrasive particles have a size of from 160 to 200 microns. 如申請專利範圍第6項所述之組合式修整器,其中該複數穿透孔或該複數容置槽其中之一者與該複數研磨單元的剖面為圓形或多邊形其中之一者。 The combined dresser of claim 6, wherein one of the plurality of penetration holes or the plurality of accommodating grooves and the plurality of grinding units has a circular or polygonal cross section. 如申請專利範圍第14項所述之組合式修整器,其中該大基板周緣內側設有等間隔環狀排列的8個研磨單元。 The combination dresser of claim 14, wherein the inner side of the large substrate is provided with eight polishing units arranged at equal intervals in a ring shape. 如申請專利範圍第15項所述之組合式修整器,其中該8個研磨單元的內側設有等間隔排列的4個研磨單元。 The combination dresser of claim 15, wherein the inner sides of the eight polishing units are provided with four polishing units arranged at equal intervals. 如申請專利範圍第16項所述之組合式修整器,其中該複數磨粒與該小基板是藉由高溫高壓結合、硬焊、燒結、電鍍、塑膠膠合或陶瓷結合其中之一者固定結合。 The combination dresser of claim 16, wherein the plurality of abrasive particles and the small substrate are fixedly bonded by one of high temperature and high pressure bonding, brazing, sintering, electroplating, plastic bonding or ceramic bonding. 如申請專利範圍第17項所述之組合式修整器,其中該結合劑分別滲入該複數凹凸結構內,分別固化結合該複數內壁、該複數外壁;該結合劑的材料包含金屬、金屬合金、塑膠材料、陶瓷材料、及上述材料的混合物其中之一者。 The combination dresser of claim 17, wherein the bonding agent is respectively infiltrated into the plurality of concave and convex structures, and respectively bonded to the plurality of inner walls and the plurality of outer walls; the material of the bonding agent comprises a metal, a metal alloy, Plastic material, ceramic material, and a mixture of the above materials. 如申請專利範圍第18項所述之組合式修整器,其中該結合劑的材料為環氧樹脂材料。 The combination dresser of claim 18, wherein the material of the bonding agent is an epoxy resin material. 如申請專利範圍第6項所述之組合式修整器,其中該結合劑分別滲入該複數凹凸結構內,分別固化結合該複數內壁、該複數外壁;該結合劑的材料包含金屬、金屬合金、塑膠材料、陶瓷材料、及上述材料的混合物其中之一者。 The combination dresser of claim 6, wherein the bonding agent is respectively infiltrated into the plurality of concave and convex structures, and respectively bonded to the plurality of inner walls and the plurality of outer walls; the material of the bonding agent comprises a metal, a metal alloy, Plastic material, ceramic material, and a mixture of the above materials. 如申請專利範圍第20項所述之組合式修整器,其中該結合劑的材料為環氧樹脂材料。 The combination dresser of claim 20, wherein the material of the bonding agent is an epoxy resin material. 如申請專利範圍第21項所述之組合式修整器,其中該複數磨粒與該小基板是藉由高溫高壓結合、硬焊、燒結、電鍍、塑膠膠合或陶瓷結合其中之一者固定結合。The combination dresser of claim 21, wherein the plurality of abrasive particles and the small substrate are fixedly bonded by one of high temperature and high pressure bonding, brazing, sintering, electroplating, plastic bonding or ceramic bonding.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW562719B (en) * 2002-03-01 2003-11-21 Kinik Co Conditioning pad allowing individual tuning of particles
TW200408501A (en) * 2002-09-09 2004-06-01 Read Co Ltd Abrasive cloth dresser and method for dressing an abrasive cloth with the same
TW200708375A (en) * 2005-08-24 2007-03-01 Kinik Co Ceramic polishing pad conditioner/dresser having plastic base and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW562719B (en) * 2002-03-01 2003-11-21 Kinik Co Conditioning pad allowing individual tuning of particles
TW200408501A (en) * 2002-09-09 2004-06-01 Read Co Ltd Abrasive cloth dresser and method for dressing an abrasive cloth with the same
TW200708375A (en) * 2005-08-24 2007-03-01 Kinik Co Ceramic polishing pad conditioner/dresser having plastic base and manufacturing method thereof

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