TW562719B - Conditioning pad allowing individual tuning of particles - Google Patents

Conditioning pad allowing individual tuning of particles Download PDF

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Publication number
TW562719B
TW562719B TW91103800A TW91103800A TW562719B TW 562719 B TW562719 B TW 562719B TW 91103800 A TW91103800 A TW 91103800A TW 91103800 A TW91103800 A TW 91103800A TW 562719 B TW562719 B TW 562719B
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Taiwan
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abrasive grains
item
metal
scope
dressing
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TW91103800A
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Chinese (zh)
Inventor
Yang-Liang Bai
Shin-Jeng Lin
Jian-Min Sung
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Kinik Co
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Publication of TW562719B publication Critical patent/TW562719B/en

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

This invention relates to a conditioning pad allowing individual tuning of particles. Each particle is independently brazed to a rod top of a metal rod by means of braze. The metal rods after the brazing process are then inserted into apertures located at specific location of a metal tray. The metal tray is then inverted and placed above a sheet that controls the heights of each of the particle peaks. A binding agent then binds the metal rods to the metal tray to obtain a conditioning pad with consistent particle heights and highly-precise locations.

Description

562719 A7 發明說明( 本發明係關於一種能個別調整磨粒的修整盤,其上所 附的磨粒高度可以金屬桿的昇降自由調整。而磨粒的個別· 位置是以金屬桿在金屬盤上的固定位置精確控制。 拋光製程 許多精密元件的表面要非常平滑,才能符合使用需求 。例如硬碟(Hard Drive)的表面高低差必須在數奈米 (Nanometer)之内,否則磁頭(Magnetic Head)在高速搜尋記 錄媒體時會刮壞硬碟。又如以矽晶圓製造集成電路 (Integrated Circuit)時應將每次沈積的金•屬層或介電層拋平 至數十奈米以内,才能在蝕刻線路時在光罩上聚焦。壓電 材料也一定要使表面平滑以免使傳遞的彈性波走樣而使信 號失真。 如第二圖所示,拋光時常使用一旋轉的載台(8 〇 )。 拋光墊(82)乃貼在載台(80)之上。工件(9〇) 則反扣並壓在拋光墊(8 2 )面上。這時在拋光墊(8 2 )的另側注入磨漿(8 4)並使載台(8 0 )及工件(9 0)旋轉這樣就可將工件(9 〇)逐漸抛光。上述拋光法 稱為機械拋光。若磨漿(8 4)内除了懸浮的磨粒外也加 入化學侵蝕液以加速拋光的速率,這種拋光法則稱之化學 機械平坦化(Chemical Mechanical Planarization 或 CMP)。 CMP現已成半導體製程不可或缺的方法。 般的拋光墊乃以聚尿脂(Polyurethane)製成。其表面· 必須有適度的粗糙才能積聚磨漿使其磨擦工件。但工件被 拋光時其磨下的碎屑與拋光墊刮下的粉末會混合而塗佈在 --------訂---------線- (請先閱讀背面之注意事項再填寫本頁} 562719 A7 五、發明說明(z) 拋光墊的表面上而逐漸形成一個硬化層(CHazing)。硬化層 不僅無法吸附磨漿,更會降低拋光時的磨擦力以致不能有 效的拋光工件。以CMP製程用以拋光晶圓為例,每拋光一 片晶圓其拋光速率就會降低1〇/〇。通常在拋光5〇片晶圓後 ,拋光的速率已經太低,此時必須停機更換拋光墊。因此 這種製程成本很高,而且常需停機,所以產能甚低。 在拋光時若以一修整盤(Dressing Disk)來不斷刮除磨層 並在拋光墊刻劃出適度溝紋,這樣不僅磨漿可以加厚而且 磨擦力也能加大。工作就可以持續高速拋光,生產也不會 停頓。例如以鑽石的修整盤不斷修整拋光墊可以持續拋光 近千片晶圓才需要更換拋光墊。因此修整盤決定了工件拋 光的成本及產能,是許多精密製造工業不可或缺的工具。 設有修整盤與未設修整盤對晶圓拋光之數量統計如第四圖 中之圖表所示。562719 A7 Description of the invention (The present invention relates to a dressing disc that can individually adjust the abrasive particles. The height of the attached abrasive particles can be adjusted freely by the lifting and lowering of the metal rod. The individual and position of the abrasive particles are on the metal disk by the metal rod. The precise position of the fixed position is controlled. The surface of many precision components in the polishing process must be very smooth to meet the requirements of use. For example, the height difference of the surface of the hard drive must be within a few nanometers, otherwise the magnetic head Hard disks will be scratched when searching for recording media at high speed. For example, when manufacturing integrated circuits on silicon wafers, each deposited metal or metal layer or dielectric layer should be flattened to within tens of nanometers. Focus on the photomask when etching the line. The piezoelectric material must also smooth the surface to avoid distorting the transmitted elastic wave and distorting the signal. As shown in the second picture, a rotating stage (8) is often used for polishing. The polishing pad (82) is attached to the stage (80). The workpiece (90) is buckled and pressed against the surface of the polishing pad (8 2). At this time, the abrasive is injected on the other side of the polishing pad (8 2). Pulp (8 4) and make The stage (80) and the workpiece (90) are rotated so that the workpiece (90) can be gradually polished. The above-mentioned polishing method is called mechanical polishing. If the slurry (84) is not only suspended abrasive particles but also chemically added Etching fluid accelerates the polishing rate. This polishing rule is called Chemical Mechanical Planarization (CMP). CMP has become an indispensable method for semiconductor processes. General polishing pads are made of Polyurethane. The surface must be moderately rough to accumulate the grinding slurry to rub the workpiece. However, when the workpiece is polished, the grinding debris and the powder scraped off by the polishing pad will be mixed and coated on ------ --Order --------- Line- (Please read the precautions on the back before filling out this page} 562719 A7 V. Description of the invention (z) A hardened layer is gradually formed on the surface of the polishing pad (CHazing) The hardened layer not only cannot absorb the grinding slurry, but also reduces the friction during polishing to effectively polish the workpiece. Taking the CMP process for polishing wafers as an example, the polishing rate will decrease by 10 / 〇 for each wafer polished. .After polishing 50 wafers, The rate is already too low, and the polishing pad must be stopped at this time. Therefore, this process is costly and often requires shutdown, so the production capacity is very low. If a dressing disk is used to continuously scrape the abrasive layer during polishing Moderate grooves are engraved on the polishing pad, so that not only the refining slurry can be thickened, but also the friction force can be increased. The work can be continuously polished at high speed, and the production will not stop. For example, the polishing pad can be continuously trimmed by the diamond dressing disc. Only polishing pads need to be replaced to polish nearly a thousand wafers. Therefore, the dressing disk determines the cost and productivity of workpiece polishing, and is an indispensable tool for many precision manufacturing industries. The statistics of wafer polishing with and without trimming disks are shown in the graph in Figure 4.

現有枯I 修整盤為表面有鑽石磨粒(如1〇〇/12〇篩目)附著的金屬 盤。附著的方法包括以電鍍的鎳鑲崁在金屬盤上(如曰本The existing dry I trimming discs are metal discs with diamond abrasive particles (such as 100/120 mesh) attached to the surface. The method of attachment includes inlaying a metal disc with electroplated nickel (such as

Asahi公司所製的產品)。有些製程以金屬粉末燒結將鑽石 粘住(如美國3M公司所製的產品)。另有些修整盤乃以特殊 合金將鑽石牢牢焊在金屬盤上(如中華民國中國砂輪公司所 製的產品)。大部份的產品其鑽石磨粒的分佈很不均勻。只 有中國砂輪的鑽石陣®(DiaGrid⑧)修整盤上的鑽石具有規、 則的排列。 ' 在修整拋光墊時,若鑽石乃隨機分佈,它們在拋光墊 本紙張尺度適用中國n票準(CNS)A4規格(210 χ 297公爱)- ----- --------訂---------線- (請先閱讀背面之注意事項再填寫本頁) 562719 A7 _— _B7__ 五、發明說明(j ) 上所刮出的紋路很不規則,工件拋光的速率會急速下降。 這種製程控制不易,產品良率會因此降低。反之,若鑽石 排列整齊,拋光墊的刻紋均句,拋光的速率一致,工件的 品質就可保持穩定,產能也可以精確控製。因此具有規則 排列之鑽石磨粒為目前最好的拋光墊修整盤。 尤有進者,若鑽石之間的距離分得太高,鑽石在修整 時的受力會加大,這時它就容易掉落。由於鑽石的硬度遠 高於工件,掉落的鑽石會把工作嚴重刮傷。因此具規則排 列的鑽石修整盤所產生的報廢工件數會比隨機排列者低很 多。 上述三種附著鑽石的方法中以硬焊法粘結鑽石的強度 表南’其次為燒結法’枯結強度最弱的則為電鐘法。為了 避免鑽石脫落刮傷工件,最好是採用硬焊方法。然而硬焊 必須經過高溫製程(如1000。〇。在高溫時金屬盤容易變形 使鑽石的頂點落差加大。在修整拋光墊時,突出的鑽石受 力較大,因此容易崩裂。除此之外,鑽石頂點高低落差太 大時,會使低處的鑽石碰不到拋光墊。這樣鑽石的工件顆 粒數就會減少,以致使修整盤的使用壽命偏低。因此要使 鑽石修整盤發揮最大的效能最好使用硬焊技術並將鑽石排 列整齊。但這種方法不能個別調整鑽石的高度以致它們的 落差太大。 因此本發明人乃針對.這項缺點發展出了更具產業上利 用價值之本發明,本發明之主要目的在於:提供一種能個 別調整磨粒的修整盤,其可以個別調整鑽石的高度, --------訂---------^ (請先閱讀背面之注意事項再填寫本頁) 5 562719 A7 B7 五 、發明說明(f ) 控制每一顆鑽石的方向,使其在刻劃拋光墊時產生最適當 的溝紋。這樣就可以大幅提高拋光製程的效率及產品的良 率 為使貴審查委員進一步瞭解前述目的及本發明之結 構特徵,茲附以圖式詳細說明如后: 一)圖式部分: 第一圖 第二圖 第三圖 第四圖 係本發明之修整盤較佳實施例平面示意圖。 係本發明之第一圖之2 — 2剖面放大示意圖。 係現有機械拋光設備之配置示意圖。 係現有機械抛光設備設有修整盤與未設修整盤對 晶圓拋光之數量統計圖表。 (二)圖號部分: (10)金屬盤 (2 0)金屬桿 (2 2 )焊材 (3 0 )料結材料 (8 0 )載台 (8 4 )磨漿 (1 2 )銷孔 (2 0 0 )凹槽 (2 4)磨粒 (4 0 )平板 (8 2 )拋光墊 (9 0 )工件 請參閱第一圖所示,其係為本發明之金屬盤(1 〇 ) 較佳實施例平面示意圖,其中可以看出本發明在金屬盤( 1 0)上設置的磨粒(2 4)可依選定位置設置,而能夠 私紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) --------訂---------線 AW (請先閱讀背面之注意事項再填寫本頁) 562719 A7 五、發明說明(jr ) 排列成所需要之型式或密度; 配合第二圖之剖面放大示意圖觀之,本發明乃將每一 顆獨立的磨粒(2 4 )〔該磨粒可為鑽石或立方氮化硼( Cublc Boron Nitride)〕分別以焊材(2 2 )焊在一根金屬 才干(2 0 )桿頂端面上。如果在桿頂端面上預設一凹槽( 2 0 0 ),還可將磨粒(2 4)依其晶形以特定的方向固走 後焊牢(例如:以晶形的尖點朝上或稜線朝上)。由於磨粒 (2 4 )乃焊在金屬桿(2 〇 )上,所以金屬盤(丄〇 ) 並不需要加熱,因此其加工精度可以保持。這時將焊好的 金屬桿(2 0 )分別插入金屬盤(1 〇 )的特定位置銷孔 (1 2 )内就可控制磨粒(2 4)的分佈。這時將金屬盤 (1 0)反扣在一平板(4 〇)上,可使所有的磨粒(2 4 )頂點維持在同一高度上。最後以可硬化的塑膠(如 Epoxy)或焊錫等粘結材料(3 〇 )把金屬桿(2 〇)牢牢 的粘在金屬盤(1 〇)上。這樣製成的修整盤上的磨粒( 2 4)不僅絕不脫落,❿且排列有序。t重要的是所有的 磨粒(2 4)頂點齊一。這種修整盤可使拋光墊使用時歷 久彌新,工作的拋光速率可以提高,修整器的使用壽命會 大幅延長。工件的刮傷率會降到最低,產品的產量也合 到最高。 .S ’ 本發明的修整盤上所選用的磨粒(24)的粒度為2〇 至200篩目,但同一修整盤所使用的磨粒(2 4 )其最小 者的直徑為最大者的80%以上。 I 7 本纸張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) •丨 曝------ 訂---------線一 (請先閱讀背面之注意事項再填寫本頁)Asahi company). Some processes use sintering of metal powder to stick diamonds (such as those made by 3M, USA). Other dressing discs use special alloys to weld diamonds firmly to metal discs (such as those made by the China Grinding Wheel Corporation of the Republic of China). Most products have a very uneven distribution of diamond abrasive particles. The diamonds on the Diamond Grid® (DiaGrid⑧) dressing discs of the Chinese wheel only have a regular arrangement. '' When trimming polishing pads, if the diamonds are randomly distributed, they apply the Chinese n-standard (CNS) A4 specification (210 χ 297 public love) on the paper size of the polishing pad------ ------- -Order --------- Line- (Please read the precautions on the back before filling this page) 562719 A7 _— _B7__ V. The scratches on the description of the invention (j) are very irregular, and the workpiece is polished The rate will drop rapidly. This process control is not easy, and the product yield will be reduced as a result. Conversely, if the diamonds are arranged neatly, the engravings of the polishing pads are uniform, and the polishing rate is consistent, the quality of the workpiece can be kept stable, and the production capacity can be accurately controlled. Therefore, regularly arranged diamond abrasive particles are the best polishing pad dressing discs. In particular, if the distance between diamonds is too high, the force of the diamond during trimming will increase, and it will easily fall. Because diamonds are much harder than the workpiece, falling diamonds can severely scratch the job. As a result, the number of scrapped pieces produced by regularly arranged diamond dressing discs will be much lower than those randomly arranged. Among the above three methods for attaching diamonds, the intensity of bonding the diamonds by brazing is shown in Table South 'followed by the sintering method.' The weakest knot strength is the electric clock method. To prevent the diamond from falling off and scratching the workpiece, it is best to use brazing. However, brazing must go through a high-temperature process (such as 1000 °). At high temperatures, the metal disc is easily deformed to increase the difference in the peak of the diamond. When trimming the polishing pad, the protruding diamond is stressed, so it is easy to crack. When the difference between the height of the diamond apex is too large, the diamonds at the low point will not be able to touch the polishing pad. In this way, the number of diamond workpieces will be reduced, so that the service life of the dressing disc is low. Therefore, the diamond dressing disc must be maximized. The best performance is to use brazing technology and arrange the diamonds neatly. However, this method cannot individually adjust the height of the diamonds so that their drop is too large. Therefore, the present inventor has targeted this shortcoming to develop a more industrial use value The present invention, the main purpose of the present invention is to provide a dressing disc capable of individually adjusting the abrasive grains, which can individually adjust the height of the diamond, -------- order --------- ^ (please (Read the precautions on the back before filling this page) 5 562719 A7 B7 5. Description of the invention (f) Control the direction of each diamond so that it produces the most appropriate grooves when scoring the polishing pad. Improving the efficiency of the polishing process and the yield of the product will enable your reviewers to further understand the foregoing objectives and the structural features of the present invention. The detailed description is attached as follows: a) Schematic part: first picture second picture third FIG. 4 is a schematic plan view of a preferred embodiment of a dressing disc of the present invention. It is an enlarged schematic view of the cross section 2-2 of the first figure of the present invention. It is the configuration diagram of the existing mechanical polishing equipment. It is a statistical chart of the number of wafers polished by the existing mechanical polishing equipment. (2) Part of drawing number: (10) Metal plate (2 0) Metal rod (2 2) Welding material (3 0) Material (8 0) Stage (8 4) Refining (1 2) Pin hole ( 2 0 0) grooves (2 4) abrasive grains (4 0) flat plate (8 2) polishing pad (9 0) workpiece please refer to the first figure, which is the metal disk (1 0) of the present invention is preferred A schematic plan view of the embodiment, in which it can be seen that the abrasive particles (24) provided on the metal plate (10) of the present invention can be set according to the selected position, and the paper size can be adapted to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -------- Order --------- Line AW (Please read the notes on the back before filling this page) 562719 A7 V. Description of Invention (jr) Arrange as required Type or density; In accordance with the enlarged schematic view of the cross section of the second figure, the present invention separates each individual abrasive grain (2 4) [the abrasive grain can be diamond or cubic boron nitride (Cublc Boron Nitride)] respectively The welding material (2 2) is welded on the top surface of a metal talent (20) rod. If a groove (2 0 0) is preset on the top surface of the rod, the abrasive grains (2 4) can be fixed in a specific direction according to their crystal shape and then welded firmly (for example, the sharp point of the crystal shape is upward or the ridge line is welded). Facing up). Since the abrasive grains (2 4) are welded to the metal rod (20), the metal disc (丄 0) does not need to be heated, so its processing accuracy can be maintained. At this time, the welded metal rods (20) are respectively inserted into the pin holes (12) at specific positions of the metal disk (10) to control the distribution of the abrasive particles (24). At this time, the metal plate (10) is buckled on a flat plate (40), so that the apex of all the abrasive particles (24) can be maintained at the same height. Finally, the metal rod (20) is firmly adhered to the metal disc (10) with a hardenable plastic (such as Epoxy) or a bonding material (30) such as solder. The abrasive grains (2 4) on the dressing disc made in this way not only never fall off, but also are arranged in an orderly manner. What is important is that the apexes of all abrasive particles (2 4) are uniform. This dressing disc can make the polishing pad last longer, the polishing rate of work can be increased, and the service life of the dresser can be greatly extended. The scratch rate of the workpiece will be minimized, and the product output will be the highest. .S 'The grain size of the abrasive grains (24) used on the dressing disc of the present invention is 20 to 200 mesh, but the diameter of the smallest abrasive grain (2 4) used in the same dressing disc is 80 of the largest. %the above. I 7 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) • 丨 Exposure ------ Order --------- Line 1 (Please read the note on the back first (Fill in this page again)

Claims (1)

562719 六、申請專利範圍 1 ·—種能個別調整磨粒的修整盤,其磨粒乃粘結在 一金屬桿頂端,而金屬桿乃固定在金屬盤上者。 2如申請專利範圍第1項所述之能個別調整磨粒的 修整盤’其中該磨粒為鑽石。 3如申請專利範圍第1項所述之能個別調整磨粒的 修整盤,其中該磨粒為立方氮化硼(Cubic B沉⑽NiM如)。 4 ·如申請專利範圍第i項所述之能個別調整磨粒的 修正盤,其中該磨粒粘結在金屬桿頂端的粘結法為硬焊。 5如申明專利範圍第4項所述之能個別調整磨粒的 修整盤,其中該磨粒乃以一含鉻的鎳合金焊在金屬桿上。 6 ·如申請專利範圍第丄項所述之能個別調整磨粒的 修整盤,其中該金屬桿為不銹鋼所製。 7如申清專利範圍第1項所述之能個別調整磨粒的 修整盤,其中該金屬盤為不銹鋼所製。 8 .如中請專利_第!項所述之能個別調整磨粒的 修整盤’其中該金屬桿乃以鲜錫焊設固定在金屬盤上。 9 ·如中請專·圍第丨項所述之能個別調整磨粒的 修整盤’其中該金屬桿乃以硬膝枯設固定在金屬盤上。 10 ϋ請專利範圍第1項所述之能個別調整磨粒 的修整盤,其中該磨粒的粒度為20至200篩目。 11.如申請專利範圍第!0項所述之能個別調整磨 粒的修整盤,其中同一修整盤所使用的磨粒其最小者的直 徑為最大者的80%以上。 1 2 .如申請專利範圍第1項所述之能個別縣磨粒. i紙張尺度適种國國家標準(CNS)A4規格(趟χ 297公贊了 A8B8C8D8 τ、申請專利範圍 的修整盤’其中該磨粒乃具有特定方向者。 的方錄造如f請專利範圍第1項所述的修整盤 的方曰^,其係將每__立的磨粒分別以焊材焊在一根金 屬^頂端面上’接著將焊好的金屬桿分別插入金屬盤的 7定位置鎖孔内,再將金屬盤反扣在一平板上,以平板控 製各磨粒的頂點高度,最後以枯結材料把金屬桿枯固在金 屬盤上。 訂 1β·如申請專利範圍第15項所述之製造修整盤的 方法,其中該等磨粒頂點的高度落差在5〇 m以内。 I 本紙張尺度適用中國國家標準(CNS)A4规格(210 X 297公爱)562719 6. Scope of patent application 1 · A dressing disc capable of individually adjusting the abrasive grains, the abrasive grains of which are bonded to the top of a metal rod, and the metal rod is fixed on the metal disc. 2 A dressing disc capable of individually adjusting abrasive grains as described in item 1 of the scope of the patent application, wherein the abrasive grains are diamonds. 3 The dressing disc capable of individually adjusting the abrasive particles as described in item 1 of the scope of the patent application, wherein the abrasive particles are cubic boron nitride (Cubic B Shen NiM). 4. The correction disk capable of individually adjusting the abrasive grains as described in item i of the scope of the patent application, wherein the bonding method of the abrasive grains to the top of the metal rod is brazing. 5. The dressing disc capable of individually adjusting the abrasive grains as described in item 4 of the declared patent scope, wherein the abrasive grains are welded to the metal rod with a chromium-containing nickel alloy. 6 · The dressing disc capable of individually adjusting the abrasive particles as described in item 丄 of the patent application scope, wherein the metal rod is made of stainless steel. 7 The dressing disc capable of individually adjusting the abrasive grains as described in item 1 of the patent claim, wherein the metal disc is made of stainless steel. 8. If so please patent _ Article! The dressing disc capable of individually adjusting the abrasive particles as described in the item above, wherein the metal rod is fixed on the metal disc with a fresh soldering device. 9 · The dressing disc capable of individually adjusting the abrasive grains as described in the item of the item of “Please ask”. The metal rod is fixed on the metal disc with a rigid knee. 10 ϋ The dressing disc capable of individually adjusting the abrasive grains described in item 1 of the patent scope, wherein the grain size of the abrasive grains is 20 to 200 mesh. 11. As for the scope of patent application! The dressing disc capable of individually adjusting the abrasive grains described in item 0, wherein the diameter of the smallest abrasive grain used in the same dressing disc is more than 80% of the diameter of the largest. 1 2. The individual county abrasive grains as described in item 1 of the scope of the patent application. I Paper size is suitable for the national standard (CNS) A4 specification of the country (trip χ 297 praised A8B8C8D8 τ, the patented trimming disk 'among which The abrasive grains have a specific direction. The recipe for making a dressing disc as described in item 1 of the patent scope ^ is that each abrasive grain is welded to a metal with a welding material. ^ Top surface 'Then insert the welded metal rods into the 7-position keyholes of the metal plate, and then buckle the metal plate on a flat plate, use the plate to control the height of the apex of each abrasive grain, and finally use the dead material Dry the metal rod on the metal plate. Order 1β · The method for manufacturing a dressing plate as described in item 15 of the scope of patent application, wherein the height difference of the apex of the abrasive grains is within 50m. I This paper size applies to China National Standard (CNS) A4 Specification (210 X 297 Public Love)
TW91103800A 2002-03-01 2002-03-01 Conditioning pad allowing individual tuning of particles TW562719B (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI380878B (en) * 2009-04-21 2013-01-01 Sung Chien Min Combined Dressing Machine and Its Making Method
TWI383860B (en) * 2009-06-19 2013-02-01 Chien Min Sung Modular dresser
US20150231759A1 (en) * 2014-02-18 2015-08-20 Kinik Company Chemical mechanical polishing conditioner with high performance
US20170113321A1 (en) * 2015-10-27 2017-04-27 Kinik Company Ltd. Hybridized cmp conditioner
US9687961B2 (en) 2014-12-17 2017-06-27 Kinik Company Grinding tool and method of manufacturing the same
TWI616278B (en) * 2015-02-16 2018-03-01 China Grinding Wheel Corp Chemical mechanical abrasive dresser

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI380878B (en) * 2009-04-21 2013-01-01 Sung Chien Min Combined Dressing Machine and Its Making Method
TWI383860B (en) * 2009-06-19 2013-02-01 Chien Min Sung Modular dresser
US20150231759A1 (en) * 2014-02-18 2015-08-20 Kinik Company Chemical mechanical polishing conditioner with high performance
TWI580524B (en) * 2014-02-18 2017-05-01 中國砂輪企業股份有限公司 Chemical mechanical polishing conditioner with high performance and method for manufacturing the same
US9687961B2 (en) 2014-12-17 2017-06-27 Kinik Company Grinding tool and method of manufacturing the same
TWI616278B (en) * 2015-02-16 2018-03-01 China Grinding Wheel Corp Chemical mechanical abrasive dresser
US20170113321A1 (en) * 2015-10-27 2017-04-27 Kinik Company Ltd. Hybridized cmp conditioner

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