CN113199400A - Chemical mechanical grinding polishing pad dressing device and preparation method thereof - Google Patents
Chemical mechanical grinding polishing pad dressing device and preparation method thereof Download PDFInfo
- Publication number
- CN113199400A CN113199400A CN202110573683.XA CN202110573683A CN113199400A CN 113199400 A CN113199400 A CN 113199400A CN 202110573683 A CN202110573683 A CN 202110573683A CN 113199400 A CN113199400 A CN 113199400A
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- Prior art keywords
- polishing pad
- chemical mechanical
- dresser
- abrasive particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/009—Tools not otherwise provided for
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing pad truer and a preparation method thereof. The polishing pad dresser is high in hardness, wear-resistant and corrosion-resistant, and abrasive particles protruding on a grinding surface can be effectively controlled through a machining process, so that the dressing effect of the dresser is guaranteed.
Description
Technical Field
The invention belongs to the field of chemical mechanical grinding, and relates to a chemical mechanical grinding polishing pad dresser and a preparation method thereof.
Background
With the development of semiconductor process, the requirement of the photolithography technique for the flatness of the wafer surface is higher and higher, and Chemical Mechanical Polishing (CMP) is the most commonly used global planarization process. When carrying out chemical mechanical polishing, the truing device is used for getting rid of the impurity on the grinding Pad (Pad), keeps grinding Pad surface fresh, has improved grinding Pad life when guaranteeing grinding Pad grinding quality, reduces consumptive material cost by a wide margin. The most widely used truing device is diamond truing device, which uses diamond as truing abrasive particles and fixes the abrasive particles on a matrix made of a certain material regularly or randomly according to a certain arrangement mode, and the fixing method comprises sintering, brazing, electroplating and the like. The truers made by these methods have certain problems in practical use.
The diamond truing device takes diamond as truing abrasive particles, the sizes and the shapes of the abrasive particles are different, the heights of the tops of the diamond are staggered and large, the control is difficult to be in a reasonable range, and in addition, the diamond abrasive particles have broken surfaces, so the truing performance of the truing device is difficult to control. The method for fixing the diamond on the matrix mainly comprises sintering, brazing and electroplating, and if the matrix is not corrosion-resistant, diamond abrasive particles are easy to fall off after the truer works in an acid grinding fluid environment for a long time, so that the whole grinding process is influenced.
CN202952159U provides a chemical mechanical polishing dresser, comprising: a substrate, a bonding layer, a fixed template and a plurality of abrasive particles; the bonding layer is arranged on the substrate, the fixed template is arranged on the bonding layer and is provided with a plurality of through holes, the abrasive particles are correspondingly accommodated in the through holes and are arranged against the bonding layer, and the abrasive particles are respectively provided with a grinding end protruding relative to the surface of the fixed template; the thermal expansion coefficients of the substrate and the fixed template are higher or lower than that of the bonding layer, and the relationship of the thermal expansion coefficient difference among the substrate, the fixed template and the bonding layer is controlled so as to obtain the light and thin chemical mechanical polishing truing device, so that the deformation problem generated when the substrate is subjected to a brazing method after being light and thin is solved, the problems of diamond particle falling and dislocation are also solved, and the manufacturing cost is further reduced.
CN203380772U discloses a chemical mechanical polishing dresser, comprising: a substrate; a bonding layer disposed on the substrate; and a polishing layer having a metal foil and a first layer of polishing particles disposed over the metal foil, the polishing layer being coupled to the substrate by the bonding layer; wherein the first abrasive particle layer comprises a plurality of abrasive particles, wherein the protruding tips of the abrasive particles have a flat surface, such that the abrasive particles do not have one or more particularly pronounced protruding tips, and the abrasive particles have a patterned arrangement.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a chemical mechanical polishing pad dresser and a preparation method thereof.
In order to achieve the technical effect, the invention adopts the following technical scheme:
one object of the present invention is to provide a chemical mechanical polishing pad dresser, comprising a base and at least one dressing abrasive grain attached to a surface of the base, the dressing abrasive grain being directly processed from the base material.
As a preferred solution of the invention, the material of the substrate comprises any one or a combination of at least two of alumina, cubic boron nitride, silicon carbide, tungsten carbide or boron carbide, typical but non-limiting examples of which are: a combination of alumina and cubic boron nitride, a combination of cubic boron nitride and silicon carbide, a combination of silicon carbide and tungsten carbide, a combination of tungsten carbide and boron carbide, a combination of boron carbide and alumina or a combination of alumina, cubic boron nitride and silicon carbide, and the like.
As a preferred embodiment of the present invention, the shape of the modified abrasive particles includes any one of a cone, a pyramid, a frustum, a truncated cone, or a pitched roof, or a combination of at least two of them, and typical but non-limiting examples of the combination are: a combination of a cone and a pyramid, a combination of a pyramid and a terrace, a combination of a terrace and a circular table, a combination of a circular table and a pitched roof, a combination of a pitched roof and a cone, a combination of a pyramid and a terrace, and the like. Wherein, the combination refers to a combination pattern formed by splicing or inserting in different shapes.
In a preferred embodiment of the present invention, the size of the conditioning abrasive particles is 50 to 500 μm, such as 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, or 450 μm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
In the present invention, the dimensions include, for example, the diameter of the bottom surface of a cone, the length of the bottom surface of a pyramid, the length of the upper end surface and the lower end surface of a truncated pyramid, the diameter of the upper end surface and the lower end surface of a truncated cone, and the length of the bottom surface of a pitched roof.
In a preferred embodiment of the present invention, the distance between adjacent trimmed abrasive grains is 50 to 500 μm, such as 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, or 450 μm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
In a preferred embodiment of the present invention, the height difference of the conditioning abrasive particles is less than 20 μm, such as 1 μm, 2 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, or 18 μm, but is not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Another object of the present invention is to provide a method for preparing the above-mentioned chemical mechanical polishing pad dresser, the method comprising:
sintering the powder of the base material into a dish-shaped blank, and etching the surface of the dish-shaped blank by using laser to obtain the finishing abrasive particles.
As a preferred embodiment of the invention, the disc blank is machined to the required dimensions before the etching.
In the invention, the blank is processed to the required size by adopting equipment such as a linear cutting machine, a grinding machine and the like.
As a preferred embodiment of the present invention, the laser is an ultrashort pulse laser.
In a preferred embodiment of the present invention, the pulse duration of the laser is less than 1ns, such as 0.1ns, 0.2ns, 0.3ns, 0.4ns, 0.5ns, 0.6ns, 0.7ns, 0.8ns, or 0.9ns, but not limited to the above-mentioned values, and other values not listed in the above-mentioned range are also applicable.
Compared with the prior art, the invention has at least the following beneficial effects:
the invention provides a chemical mechanical polishing pad truing device and a preparation method thereof, wherein the truing device and the preparation method are used for directly processing a grinding surface on a ceramic material or a hard alloy material with ultrahigh hardness to prepare an integrated truing device. The truing device is high in overall hardness, wear-resistant and corrosion-resistant, the truing abrasive particles are not easy to fall off, and the abrasive particles with the raised grinding surfaces can be effectively controlled through a processing technology, so that the truing effect of the truing device is guaranteed.
Drawings
FIG. 1 is a schematic diagram of a chemical mechanical polishing pad dresser as provided in embodiment 2 of the present invention;
FIG. 2 is a schematic diagram of a chemical mechanical polishing pad dresser as provided in embodiment 3 of the present invention;
FIG. 3 is a schematic diagram of a chemical mechanical polishing pad dresser as provided in embodiment 4 of the present invention;
FIG. 4 is a schematic diagram of a chemical mechanical polishing pad dresser as provided in embodiment 5 of the present invention;
figure 5 is a schematic diagram of a chemical mechanical polishing pad dresser as provided in embodiment 6 of the present invention.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
To better illustrate the invention and to facilitate the understanding of the technical solutions thereof, typical but non-limiting examples of the invention are as follows:
example 1
The present embodiment provides a method of manufacturing a chemical mechanical polishing pad dresser, the method comprising:
sintering powder of a base material into a disc-shaped blank, and etching the surface of the disc-shaped blank by using ultrashort pulse laser to obtain trimming abrasive particles, wherein the time width of the ultrashort pulse laser is less than 1 ns.
Example 2
The present embodiment provides a chemical mechanical polishing pad dresser, which is manufactured by the manufacturing method of embodiment 1, and has a structure as shown in fig. 1, wherein the base material of the dresser is alumina, the dressing abrasive grains are cylindrical, the diameter D of each dressing abrasive grain is 50 μm, and the distances a and b between adjacent dressing abrasive grains are 50 μm.
Example 3
The present embodiment provides a chemical mechanical polishing pad dresser, which is manufactured by the manufacturing method of embodiment 1, and has a structure as shown in fig. 2, wherein the base material of the dresser is cubic boron nitride, the shape of the dressing abrasive grains is a truncated cone, the diameter D of the dressing abrasive grains is 300 μm, D is 150 μm, and the distances a and b between adjacent dressing abrasive grains are 250 μm.
Example 4
The present embodiment provides a chemical mechanical polishing pad dresser, which is manufactured by the manufacturing method of embodiment 1, and has a structure as shown in fig. 3, wherein the base material of the dresser is silicon carbide, the shape of the dressing abrasive particles is pyramid, the sides of the bottom surfaces of the dressing abrasive particles are 200 μm, and the distances a and b between adjacent dressing abrasive particles are 200 μm.
Example 5
The present example provides a cmp pad dresser, which is manufactured by the manufacturing method of example 1, and has a structure as shown in fig. 4, wherein the base material of the dresser is tungsten carbide, the dressing abrasive grains are shaped like a truncated pyramid, the sides of the bottom surfaces of the dressing abrasive grains are 400 μm and n, the sides of the top surfaces of the dressing abrasive grains are 200 μm, and the distances a and b between adjacent dressing abrasive grains are 200 μm.
Example 6
The present embodiment provides a chemical mechanical polishing pad dresser, which is manufactured by the manufacturing method of embodiment 1, and has a structure as shown in fig. 5, wherein a base material of the dresser is boron carbide, the dressing abrasive grains are shaped like a pitched roof, the sides of the bottom surfaces of the dressing abrasive grains are 500 μm, n is 350 μm, and the distance a between adjacent dressing abrasive grains is 250 μm and b is 150 μm.
The chemical mechanical polishing pad dressers provided in examples 2 to 6 were tested for hardness, bond strength of the dressing abrasive particles to the matrix, and wear resistance, and the results are shown in table 1. And compared to a conventional diamond dresser.
The hardness test method comprises the following steps: and (5) detecting by using a Vickers hardness tester.
The test method for the bonding strength of the trimmed abrasive particles and the matrix comprises the following steps: and applying a force parallel to the surface of the matrix to the abrasive particles by using a push-pull force meter, wherein the ratio of the indication number of the push-pull force meter to the bonding area when the abrasive particles are separated from the substrate is the bonding strength.
The test method of the wear resistance comprises the following steps: the dresser is placed on a rotating polishing pad, is pressed by a force of 25N, and moves relative to the polishing pad, and the longer the time for grinding the polishing pad until the roughness Ra of the polishing pad is less than 4 mu m is taken as an index, the longer the time is, the better the wear resistance is.
TABLE 1
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
The preferred embodiments of the present invention have been described in detail, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. A chemical mechanical polishing pad dresser comprising a base and at least one conditioning abrasive particle attached to a surface of the base, the conditioning abrasive particle being directly machined from the base material.
2. The polishing pad dresser of claim 1, wherein the substrate comprises a material comprising any one of alumina, cubic boron nitride, silicon carbide, tungsten carbide, or boron carbide, or a combination of at least two thereof.
3. The polishing pad conditioner of claim 1 or 2, wherein the shape of the conditioning abrasive particles comprises any one of a cone, pyramid, frustum, truncated cone, or pitched roof type or a combination of at least two thereof.
4. The polishing pad dresser of any one of claims 1 to 3, wherein the dressing abrasive grains have a size of 50 to 500 μm.
5. The polishing pad dresser of any one of claims 1 to 4, wherein a pitch between adjacent dressing abrasive grains is 50 to 500 μm.
6. The polishing pad dresser of any one of claims 1 to 5, wherein the difference in height of the dressing abrasive grains is less than 20 μm.
7. A method of preparing a chemical mechanical abrasive polishing pad conditioner according to any one of claims 1 to 6, wherein the method of preparing comprises:
sintering the powder of the base material into a dish-shaped blank, and etching the surface of the dish-shaped blank by using laser to obtain the finishing abrasive particles.
8. A method according to claim 7, characterized in that the disc blank is machined to the desired dimensions before the etching.
9. The production method according to claim 7 or 8, wherein the laser is an ultrashort pulse laser.
10. The method of claim 9, wherein the laser has a pulse time width of less than 1 ns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110573683.XA CN113199400A (en) | 2021-05-25 | 2021-05-25 | Chemical mechanical grinding polishing pad dressing device and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110573683.XA CN113199400A (en) | 2021-05-25 | 2021-05-25 | Chemical mechanical grinding polishing pad dressing device and preparation method thereof |
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| CN113199400A true CN113199400A (en) | 2021-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110573683.XA Pending CN113199400A (en) | 2021-05-25 | 2021-05-25 | Chemical mechanical grinding polishing pad dressing device and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117103123A (en) * | 2023-10-24 | 2023-11-24 | 华南理工大学 | Micro-nano structure forming control method for diamond abrasive particle flattened surface |
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| US7241206B1 (en) * | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
| CN102612734A (en) * | 2009-09-01 | 2012-07-25 | 圣戈班磨料磨具有限公司 | Chemical mechanical polishing conditioner |
| CN103688343A (en) * | 2011-03-07 | 2014-03-26 | 恩特格里公司 | Chemical mechanical planarization pad conditioner |
| CN104972398A (en) * | 2014-04-03 | 2015-10-14 | 深圳市平华兴科技有限公司 | Polishing pad dresser and manufacturing method thereof |
| CN105364715A (en) * | 2014-08-11 | 2016-03-02 | 兆远科技股份有限公司 | A polishing finisher |
-
2021
- 2021-05-25 CN CN202110573683.XA patent/CN113199400A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7241206B1 (en) * | 2006-02-17 | 2007-07-10 | Chien-Min Sung | Tools for polishing and associated methods |
| CN102612734A (en) * | 2009-09-01 | 2012-07-25 | 圣戈班磨料磨具有限公司 | Chemical mechanical polishing conditioner |
| CN103688343A (en) * | 2011-03-07 | 2014-03-26 | 恩特格里公司 | Chemical mechanical planarization pad conditioner |
| CN104972398A (en) * | 2014-04-03 | 2015-10-14 | 深圳市平华兴科技有限公司 | Polishing pad dresser and manufacturing method thereof |
| CN105364715A (en) * | 2014-08-11 | 2016-03-02 | 兆远科技股份有限公司 | A polishing finisher |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117103123A (en) * | 2023-10-24 | 2023-11-24 | 华南理工大学 | Micro-nano structure forming control method for diamond abrasive particle flattened surface |
| CN117103123B (en) * | 2023-10-24 | 2024-01-30 | 华南理工大学 | Micro-nano structure forming control method for diamond abrasive particle flattened surface |
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Application publication date: 20210803 |
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