CN104972398A - Polishing pad dresser and manufacturing method thereof - Google Patents
Polishing pad dresser and manufacturing method thereof Download PDFInfo
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- CN104972398A CN104972398A CN201410134362.XA CN201410134362A CN104972398A CN 104972398 A CN104972398 A CN 104972398A CN 201410134362 A CN201410134362 A CN 201410134362A CN 104972398 A CN104972398 A CN 104972398A
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- polishing pad
- substrate
- grain
- finishing grain
- finishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Abstract
The invention relates to a polishing pad dresser and a manufacturing method of the polishing pad dresser. The polishing pad dresser comprises a substrate and a plurality of dressing particles which are located on a working face of the substrate and protrude out of the working face. The dressing particles and the substrate are of an integral structure. According to the polishing pad dresser, due to the fact that the dressing particles and the substrate are of the integral structure, the dresser has the beneficial effect that the dressing particles are not prone to falling off, and the service life of the polishing pad dresser can be prolonged, and the polishing yield of the polishing pad dresser can be improved. The manufacturing method of the polishing pad dresser is used for manufacturing the polishing pad dresser, and the manufactured polishing pad dresser has the beneficial effect as well.
Description
Technical field
The present invention relates to a kind of trimmer, in particular to a kind of polishing pad trimmer and manufacture method thereof.
Background technology
Flourish along with contemporary semiconductor and opto-electronics, assembly live width is more and more less, and circuit area is more and more less, and planarization process is corresponding also becomes increasingly important, and chemically mechanical polishing (Chemical Mechanical Planarization; CMP) due to the demand of the high planarization of semiconductor devices processing procedure can be met, be thus widely used.
In the process of carrying out chemically mechanical polishing, the cavity on polishing pad (also the claiming grinding pad) surface in polissoir evenly can carry out chemical reaction containing supporting rubbing paste (slurry) to make the burnishing surface of rubbing paste and polished wafer, the cilium of pad interface can rub with wafer simultaneously, via the combination of chemical force and mechanical force, remove the irregular position of wafer surface, realize the polishing to wafer.But polishing pad also can be passivated in process of lapping, that is, hole is polished the chip (debris) or abrasive grains (abrasive) filling that remove in process, and cilium is depleted because rubbing for a long time, and then causes polishing efficiency to reduce.Maintain certain grinding efficiency for making polishing pad and keep Grinding Quality, need in the process of chemically mechanical polishing, polishing pad trimmer is in time used to repair polishing pad, to remove the polishing accessory substance of pad interface, recover the roughness (producing new cilium) of polishing pad, improve the ability (recovering the hole of pad interface) of the accommodation slurry of polishing pad, so can reduce the cost of polishing pad, and stay-in-grade demand when can reach wafer volume production.
Polishing pad trimmer used in the prior art is mainly by formed diamond particles (that is, repairing grain) plating or hard solder in metallic disc surface.Because ten hundreds of diamond particles (finishing grain) is that the mode sintered by plating or hard solder is combined with metal dish, adhesion and contact area size and state are proportionate, still there is the problem such as rising-heat contracting-cold between interface in diamond grains and interpass, easily cause diamond come off lost efficacy state, when bad generations often in repair time occur repair abscission.In addition, the pattern that another kind of diamond comes off is the corrosion that the metal of following layer suffers rubbing paste, so that loses then effect, thus causes repairing abscission.Coming off of diamond particles, often causes the local of machined object (wafer) or the scratch of large area and fragmentation to lose, causes polishing yield to decline.In addition, because polishing pad trimmer is mainly by formed diamond particles plating or hard solder in metallic disc surface, it often has that the exposed height of diamond (finishing grain) is inconsistent, face shaping is inconsistent and the problem such as to cause not of uniform size, and the inconsistent of these does not often all have rule to say.Correspondingly, the inconsistent overall utilization rate of repairing grain when repairing that often causes of the height of finishing grain reduces, and according to statistics, in existing polishing pad trimmer, only the diamond of 40% has the effect of trimming polished pad when repairing; In outward appearance, the diamond grains of tool cutting force is the diamond of most advanced and sophisticated projection, and end face is the smooth person only a little grooming function of tool; Due to the existence of aforementioned two kinds of situations, cause the monolithic finish efficiency of polishing pad trimmer low.
Visible, there is finishing grain and hold caducous problem in existing polishing pad trimmer, often causes polishing yield to decline.For addressing this problem, be necessary to propose a kind of new polishing pad trimmer and manufacture method thereof.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of polishing pad trimmer and manufacture method thereof, to reduce the possibility of finishing abscission, improve polishing yield and service life.
The embodiment of the present invention one provides a kind of polishing pad trimmer, and to comprise on substrate and the working face being positioned at described substrate and multiple finishing grains of outstanding described working face, wherein, described finishing grain and described substrate are structure as a whole.
Alternatively, described finishing grain is regularly arranged on the substrate, and the top of described finishing grain has at least two levels.
Alternatively, the top being positioned at the described finishing grain of the central area of described substrate is higher than the top of described finishing grain being positioned at other regions.
Alternatively, the described working face of described substrate is plane, or has the projecting surface of radian, or has the projecting surface of at least Liang Ge stratum.
Alternatively, the described working face of described substrate is the projecting surface with radian, and wherein, the fringe region of described substrate and the difference in height of middle section are R, and, 300 μm of >S>100 μm.
Alternatively, the described working face of described substrate is the projecting surface with at least Liang Ge stratum, and wherein, the difference in height of adjacent different estate is S, and, 50 μm of >S>10 μm.
Alternatively, the described working face of described substrate is the projecting surface with at least Liang Ge stratum, and the quantitative range of wherein said stratum is 3-10.
Alternatively, the quantity of described finishing grain to be successively decreased to outer ring by center or is increased progressively.
Alternatively, the shape of described finishing grain comprises tack cone post or tip cone post, and/or the altitude range of described finishing grain is 100-300 μm.
Alternatively, the material of described substrate and described finishing grain is sapphire.
The embodiment of the present invention two provides a kind of manufacture method of polishing pad trimmer, and described method comprises:
Step S101: be provided for the substrate preparing polishing pad trimmer;
Step S102: form mask on the surface for the formation of finishing grain of described substrate;
Step S103: etch to form finishing grain on the substrate to described substrate, remove described mask.
Alternatively, described substrate is sapphire substrate, and described step S101 comprises:
Step S1011: alumina raw material is carried out melt via high temperature furnace, carries out crystal pulling by specific axis to crystal seed, has cooled the growth of alumina single crystal, forms crystal bar;
Step S1012: cut into slices to described crystal bar along specific axis, forms substrate;
Step S1013: the surface of described substrate is repaired.
Alternatively, after described step S103, also step S104 is comprised:
Described substrate and described finishing grain are heat-treated, to repair the damage etching and cause.
Alternatively, described finishing grain is regularly arranged on the substrate, and the top of described finishing grain has at least two levels.
Polishing pad trimmer of the present invention, because finishing grain and substrate are structure as a whole, therefore has the advantage of finishing grain difficult drop-off, can improve the service life of polishing pad trimmer, and improve polishing yield.The manufacture method of polishing pad trimmer of the present invention, for the manufacture of above-mentioned polishing pad trimmer, obtained polishing pad trimmer has above-mentioned advantage equally.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.
In accompanying drawing:
Fig. 1 is the perspective view of the polishing pad trimmer of the embodiment of the present invention one;
Fig. 2 is a kind of schematic cross sectional view of the polishing pad trimmer of the embodiment of the present invention one;
Fig. 3 A is a kind of schematic cross sectional view of the finishing grain of the polishing pad trimmer of the embodiment of the present invention one;
Fig. 3 B is the another kind of schematic cross sectional view of the finishing grain of the polishing pad trimmer of the embodiment of the present invention one;
Fig. 4 A is a kind of schematic cross sectional view of the substrate of the polishing pad trimmer of the embodiment of the present invention one;
Fig. 4 B is the second schematic cross sectional view of the substrate of the polishing pad trimmer of the embodiment of the present invention one;
Fig. 4 C is the third schematic cross sectional view of the substrate of the polishing pad trimmer of the embodiment of the present invention one, and wherein, upper figure is top view, and figure below is side view;
Fig. 5 A to Fig. 5 D is the schematic cross sectional view of the structure that the correlation step of the manufacture method of the polishing pad trimmer of the embodiment of the present invention two is formed;
Fig. 6 is a kind of flow chart of the manufacture method of the polishing pad trimmer of the embodiment of the present invention two.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
Should be understood that, the present invention can implement in different forms, and should not be interpreted as the embodiment that is confined to propose here.On the contrary, provide these embodiments will expose thoroughly with complete, and scope of the present invention is fully passed to those skilled in the art.In the accompanying drawings, in order to clear, the size in Ceng He district and relative size may be exaggerated.Same reference numerals represents identical element from start to finish.
Be understood that, when element or layer be called as " ... on ", " with ... adjacent ", " being connected to " or " being coupled to " other element or layer time, its can directly on other element or layer, with it adjacent, connect or be coupled to other element or layer, or the element that can exist between two parties or layer.On the contrary, when element be called as " directly exist ... on ", " with ... direct neighbor ", " being directly connected to " or " being directly coupled to " other element or layer time, then there is not element between two parties or layer.Although it should be understood that and term first, second, third, etc. can be used to describe various element, parts, district, floor and/or part, these elements, parts, district, floor and/or part should not limited by these terms.These terms be only used for differentiation element, parts, district, floor or part and another element, parts, district, floor or part.Therefore, do not departing under the present invention's instruction, the first element discussed below, parts, district, floor or part can be expressed as the second element, parts, district, floor or part.
Spatial relationship term such as " ... under ", " ... below ", " below ", " ... under ", " ... on ", " above " etc., here can be used thus the relation of the element of shown in description figure or feature and other element or feature for convenience of description.It should be understood that except the orientation shown in figure, spatial relationship term intention also comprises the different orientation of the device in using and operating.Such as, if the device upset in accompanying drawing, then, be described as " below other element " or " under it " or " under it " element or feature will be oriented to other element or feature " on ".Therefore, exemplary term " ... below " and " ... under " upper and lower two orientations can be comprised.Device can additionally orientation (90-degree rotation or other orientation) and as used herein spatial description language correspondingly explained.
The object of term is only to describe specific embodiment and not as restriction of the present invention as used herein.When this uses, " one ", " one " and " described/to be somebody's turn to do " of singulative is also intended to comprise plural form, unless context is known point out other mode.It is also to be understood that term " composition " and/or " comprising ", when using in this specification, determine the existence of described feature, integer, step, operation, element and/or parts, but do not get rid of one or more other feature, integer, step, operation, element, the existence of parts and/or group or interpolation.When this uses, term "and/or" comprises any of relevant Listed Items and all combinations.
Here with reference to the cross-sectional view as the schematic diagram of desirable embodiment of the present invention (and intermediate structure), inventive embodiment is described.Like this, it is expected to the change from shown shape because such as manufacturing technology and/or tolerance cause.Therefore, embodiments of the invention should not be confined to the given shape in district shown here, but comprise owing to such as manufacturing the form variations caused.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, to explain technical scheme of the present invention.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
Embodiment one
Below, the polishing pad trimmer of the embodiment of the present invention is described with reference to Fig. 1, Fig. 2, Fig. 3 A, Fig. 3 B, Fig. 4 A to Fig. 4 C.Wherein, Fig. 1 is the perspective view of the polishing pad trimmer of the embodiment of the present invention; Fig. 2 is a kind of schematic cross sectional view of the polishing pad trimmer of the embodiment of the present invention one; Fig. 3 A is a kind of schematic cross sectional view of the finishing grain of the polishing pad trimmer of the embodiment of the present invention one; Fig. 3 B is the another kind of schematic cross sectional view of the finishing grain of the polishing pad trimmer of the embodiment of the present invention one; Fig. 4 A is a kind of schematic cross sectional view of the substrate of the polishing pad trimmer of the embodiment of the present invention one; Fig. 4 B is the second schematic cross sectional view of the substrate of the polishing pad trimmer of the embodiment of the present invention one; Fig. 4 C is the third schematic cross sectional view of the substrate of the polishing pad trimmer of the embodiment of the present invention one, and wherein, upper figure is top view, and figure below is side view.
The polishing pad trimmer of the present embodiment, as depicted in figs. 1 and 2, comprises substrate 100 and the multiple finishing grains 101 being positioned at the surface (that is, working face) of substrate 100 also being given prominence to described substrate 100, and wherein, finishing grain 101 is structure as a whole with substrate 100.Wherein, substrate 100 is also referred to as conditioner discs, and substrate 100 can be sapphire (main component is aluminium oxide) or other suitable materials with the material of finishing grain 101.
Wherein, the surface that substrate 100 is provided with finishing grain 101 is the working face of substrate, that is, surface relative with polishing pad when polishing pad trimmer is repaired polishing pad.
Exemplarily, in the present embodiment, finishing grain shape (outward appearance) can be as shown in Figure 3A tack cone post or tip as shown in Figure 3 B bore post, also can be the shape that other are suitable.Further, as shown in Fig. 3 A or Fig. 3 B, the height of finishing grain is h, and 300 μm of >h>100 μm.It is to be understood that the height h of finishing grain, refer to the distance from the top of finishing grain to root, as shown in Fig. 3 A or 3B.
Wherein, the surface (that is, working face) being provided with finishing grain of the substrate of the polishing pad trimmer of the present embodiment can be whole smooth structure (that is, plane), as shown in Figure 4 A; Can for having the projecting surface of radian, as shown in Figure 4 B; Can for having the projecting surface (central part to have in edge height section poor) of multiple (at least two) level (stratum), as shown in Figure 4 C; Can also be other any feasible structures.In the structure shown in Fig. 4 B, the fringe region of substrate and the difference in height value of middle section are R, wherein, and 300 μm of >R>100 μm.In the structure shown in Fig. 4 C, this substrate has n stratum, wherein, and 3<n<10; The difference in height value of adjacent different estate is S, and, 50 μm of >S>10 μm.Wherein, the substrate of structure as shown in Figure 4 B, can utilize special-shaped grinding and polishing method to obtain; The substrate of structure as shown in Figure 4 C, can adopt the preparation of the mode of the yellow light lithography of multiple tracks and substrate etch.
In the present embodiment, form the method for finishing grain 101, can realize by carrying out etching to substrate 100.Further, if need the finishing grain of many levels, can be realized by multiple tracks etching technics.Wherein, the finishing grain of different levels, refers to that the top of finishing grain is in different horizontal planes.About finishing grain distribution design, can change by mask set in micro-photographing process.
In the present embodiment, finishing grain is distributed as regular distribution (that is, distribution have certain rule) on substrate, such as, can be regional allocations or whole EDS maps.Exemplarily, the quantity (number) of repairing grain to be successively decreased to outer ring by center or increases progressively.Finishing grain size can identical also can not be identical, exemplarily, finishing grain particle diameter increased progressively to center by the outer ring of substrate.Preferably, being positioned at the top of top higher than the finishing grain in other regions of the finishing grain of the central area (middle section) of substrate 100, particularly, can be plane for the surface of substrate 100, but the height of finishing grain be inconsistent; Also can for the surface of substrate 100 be for having the projecting surface of radian or multiple level, and the height repairing grain is consistent.Finishing grain now has the different level of multiple height on the whole, and the high low gap of its finishing grain can increase effective utilization of finishing grain.Wherein, same polishing pad trimmer defines one or more finishing grain height arrangement, polishing pad finishing can be gone out even and that thickness is alternate cilium, wherein, higher finishing grain (referring to the finishing grain that top is high) can thrust pad interface and removes surface blockade thing and scrape darker groove, the coating amount of pad interface rubbing paste can be improved, lower finishing grain (referring to the finishing grain that top is low) then can scrape comparatively shallow trench simultaneously, make pad interface obtain uniform thin ciliary structures, and improve polishing efficiency.
The polishing pad trimmer of the present embodiment, because finishing grain 101 is structure as a whole with substrate 100, therefore compared with prior art, finishing grain is not easy to come off, and can improve the service life of polishing pad trimmer, and improve polishing yield.
In addition, when grinding, the surperficial unification of trimmer polishing pad and the polishing efficiency of raising trimmer polishing pad are the targets always pursued, but, top all high finishing grain arrangement easily make the detritus of finishing be trapped in the surface of polishing pad and polishing pad trimmer, not easily get rid of by centrifugal force and repairing dish inner loop, filling space always, thus can reduce and remove efficiency, and the abrasion of the tip of conforming finishing grain, contact area increases, and the downforce that need continue to increase polishing pad trimmer can be caused to maintain monolithic finish power.And in the present embodiment, when the surface being formed with finishing grain 101 of the substrate 100 of polishing pad trimmer is projecting surface (such as: have the projecting surface of radian or have the projecting surface of many levels), the shape of substrate 100 can make the top of the finishing grain 101 of central area higher than the top of the finishing grain in other regions, therefore, when repairing, the surface that the finishing grain 101 of central projection position can thrust polishing pad removes surface blockade thing and evenly scrapes darker groove, and the finishing grain 101 of periphery also can be utilized; Meanwhile, the design of non-fully plane like this, gets rid of the efficiency of detritus, avoids the chip removal problem not easily of planar structure, and then improve the efficiency of trimming polished pad when can improve grinding.In addition, so design, also can prop up polishing pad with the central part of polishing pad trimmer during use, bear most of strength, utilize the finishing grain of periphery with the trimming polished pad surface of the mode of level, the whole service life of polishing pad trimmer thus can be made to get a promotion.Certainly, as long as be positioned at the top (surface that comprise substrate 100 be plane, repair the height of grain inconsistent situation) of top higher than the finishing grain in other regions of the finishing grain of the central area (middle section) of substrate 100, just aforementioned techniques effect can be had.
Embodiment two
The manufacture method of the polishing pad trimmer of the embodiment of the present invention, for the manufacture of the polishing pad trimmer described in embodiment one.
Below, the detailed step of a manufacture method illustrative methods of the polishing pad trimmer of the embodiment of the present invention is described with reference to Fig. 5 A to 5D and Fig. 6.Wherein, Fig. 5 A to Fig. 5 D is the schematic cross sectional view of the structure of the correlation step formation of the manufacture method of the polishing pad trimmer of the embodiment of the present invention; Fig. 6 is a kind of flow chart of the manufacture method of the polishing pad trimmer of the embodiment of the present invention.
Exemplarily, the manufacture method of the polishing pad trimmer of the present embodiment, comprises the steps:
Steps A 1: be provided for the substrate (also claiming base material or conditioner discs) 100 preparing polishing pad trimmer, as shown in Figure 5A.Wherein, substrate 100 is sapphire substrate or other suitable substrates.
Exemplarily, substrate 100 is sapphire substrate, provides the method for substrate 100, comprises the steps:
Steps A 101: alumina raw material is carried out melt via high temperature furnace, carries out crystal pulling by specific axis to crystal seed, has cooled the growth of alumina single crystal, forms crystal bar;
Steps A 102: cut into slices to described crystal bar along specific axis, forms substrate (also can be called wafer, disk etc.).
Wherein, along specific axis to cutting into slices, it is the axial distribution in order to make wafer cell plane have identifiability.
Steps A 103: surfacing is carried out to the surface of described substrate.
Wherein, described finishing comprises twin grinding and polishing.
In the present embodiment, the surface for the formation of finishing grain of substrate 100, it can be whole smooth structure (as shown in Figure 4 A), can for having the projecting surface (as shown in Figure 4 B) of radian, can, for having the projecting surface (as shown in Figure 4 C) of multiple level, can also be other feasible structures.Wherein, in the structure shown in Fig. 4 B, the fringe region of substrate and the difference in height value of middle section are R, 300 μm of >R>100 μm.In the structure shown in Fig. 4 C, this substrate has n stratum, wherein, and 3<n<10; The difference in height value of adjacent different estate is S, and, 50 μm of >S>10 μm.Wherein, the substrate of structure shown in Fig. 4 B can utilize special-shaped grinding and polishing method to obtain, and the substrate of structure shown in Fig. 4 C can adopt the preparation of the mode of the yellow light lithography of multiple tracks and substrate etch.
Steps A 2: form mask 200 on the surface for the formation of finishing grain of substrate 100, as shown in Figure 5 B.
Wherein, mask 200 can be hard mask or other suitable masks.Exemplarily, form the method for mask 200, comprising: on the surface for the formation of finishing grain of substrate 100, apply photoresist layer, described photoresist layer is exposed, develops to form mask 200.
Steps A 3: substrate 100 is etched to form finishing grain 101 on described substrate 100, as shown in Figure 5 C.Then, described mask 200 is removed, as shown in Figure 5 D.
Wherein, carrying out the method etched, can be dry etching or wet etching, is preferably wet etching.
Through steps A 3, define finishing grain 101 on the substrate 100, that is, complete the manufacture of polishing pad trimmer.This step is etch process; its principle is for utilizing mask 200 protective substrate 100(such as: sapphire substrate) subregion; not protected region is removed to form finishing grain 101 by the mode re-using dry etching or wet etching; subsequently mask 200 is removed totally, obtain the structure of polishing pad trimmer.
In the present embodiment, the shape of finishing grain 101 can be tack cone post (as shown in Figure 3A) or tip cone post (as shown in Figure 3 B), also can be the shape that other are suitable.As shown in Fig. 3 A or Fig. 3 B, the height of finishing grain is h, and, 300 μm of >h>100 μm.
In the present embodiment, finishing grain on the substrate 100 be distributed as regular regular distribution, such as, can be regional allocations or whole EDS maps.Exemplarily, the number of repairing grain to be successively decreased to outer ring by center or increases progressively.Wherein, finishing grain 101 size can identical also can not be identical, exemplarily, finishing grain particle diameter increased progressively to center by the outer ring of substrate.Preferably, being positioned at the top of top higher than the finishing grain in other regions of the finishing grain of the central area (middle section) of substrate 100, particularly, can be plane for the surface of substrate 100, but the height of finishing grain be inconsistent; Also can for the surface of substrate 100 be for having the projecting surface of radian or multiple level, and the height repairing grain is consistent.Finishing grain now has the different level of multiple height on the whole, and the high low gap of its finishing grain can increase effective utilization of finishing grain.Wherein, same polishing pad trimmer defines one or more finishing grain height arrangement, polishing pad finishing can be gone out even and that thickness is alternate cilium, wherein, higher finishing grain (referring to the finishing grain that top is high) can thrust pad interface and removes surface blockade thing and scrape darker groove, the coating amount of pad interface rubbing paste can be improved, lower finishing grain (referring to the finishing grain that top is low) then can scrape comparatively shallow trench simultaneously, make pad interface obtain uniform thin ciliary structures, and improve polishing efficiency.
In the present embodiment, can adopt specific axis to sapphire crystal (c-axle, v-axle, r-axle, a-axle, m-axle) as substrate (trimmer base material), after etching shaping (forming finishing grain), form the polishing pad trimmer with the finishing grain of multiple height, its finishing grain arrangement mode is through particular design.
When grinding, the surperficial unification of trimmer polishing pad and the polishing efficiency of raising trimmer polishing pad are the targets always pursued, but, all high finishing grain arrangement easily makes the detritus of finishing be trapped in the surface of polishing pad and polishing pad trimmer, not easily get rid of by centrifugal force and repairing dish inner loop, filling space always, thus can reduce and remove efficiency, and the abrasion of the tip of conforming finishing grain, contact area increases, and the downforce that need continue to increase polishing pad trimmer can be caused to maintain monolithic finish power.And in the present embodiment, when the surface of the formation finishing grain of the substrate 100 of polishing pad trimmer is projecting surface (such as: have the projecting surface of radian or have the projecting surface of many levels), the shape of substrate 100 can make the top of the finishing grain 101 of central area higher than the top of the finishing grain in other regions, therefore, when repairing, the surface that the finishing grain 101 of central projection position can thrust polishing pad removes surface blockade thing and evenly scrapes darker groove, and the finishing grain 101 of periphery also can be utilized; Meanwhile, the design of non-fully plane like this, gets rid of the efficiency of detritus, avoids the chip removal problem not easily of planar structure, and then improve the efficiency of trimming polished pad when can improve grinding.In addition, so design, also can prop up polishing pad with the central part of polishing pad trimmer during use, bear most of strength, utilize periphery to repair grain with the trimming polished pad surface of the mode of level, the whole service life of polishing pad trimmer thus can be made to get a promotion.Certainly, as long as be positioned at the top (surface that comprise substrate 100 be plane, repair the height of grain inconsistent situation) of top higher than the finishing grain in other regions of the finishing grain of the central area (middle section) of substrate 100, just aforementioned techniques effect can be had.
Steps A 4: heat-treat substrate 100 and described finishing grain 101, to repair the damage etching and cause.
When substrate 100 is sapphire substrate, carry out in the process of etch process in steps A 3, contain physical and chemically remove the mechanism of aluminium oxide, all can cause the damage (comprising: the situations such as lattice surface defect, dislocation) of substrate 100 and finishing grain 101, the stress causing surface can bear will lower than stable sapphire structures.Therefore, the damage (that is, blemish recombinated, make surface obtain more stable lattice sequence) that this step utilizes the reparation of heat treatment processing procedure to etch to cause, to promote the life-span that polishing pad trimmer surface can bear stress and polishing pad trimmer.
Exemplarily, the heat treatment processing procedure of the present embodiment comprises: by substrate 100(namely, complete the sapphire polishing pad trimmer that finishing grain makes), insert high temperature furnace to heat up with given pace, be warming up to a predetermined temperature (such as 300-1800 DEG C) to keep afterwards this temperature some time (such as: 1 ~ 10 hour), be then cooled to room temperature.Wherein, different heat treatment temperatures will cause change in various degree to sapphire surface kenel, specifically can select according to actual needs, not limit herein.
The polishing pad trimmer that the manufacture method of the polishing pad trimmer of the embodiment of the present invention is obtained, owing to forming finishing grain by etching on the substrate 100, therefore, finishing grain 101 is structure as a whole with substrate 100, compared with prior art, there is finishing grain and do not allow caducous advantage, the service life of polishing pad trimmer can be improved, and improve polishing yield.
In addition, when the top of the top of finishing grain of central area (middle section) being positioned at substrate 100 higher than the finishing grain in other regions, when repairing, the surface that the finishing grain 101 of central projection position can thrust polishing pad removes surface blockade thing and evenly scrapes darker groove, and the finishing grain 101 of periphery also can be utilized; Meanwhile, when this design can also improve grinding, get rid of the efficiency of detritus, avoid the chip removal problem not easily of repairing the consistent structure of grain tip height, and then improve the efficiency of trimming polished pad.
With reference to Fig. 6, illustrated therein is the flow chart of a kind of typical method in the manufacture method of the polishing pad trimmer of the embodiment of the present invention, for schematically illustrating the flow process of whole manufacturing process.Specifically comprise:
Step S101: be provided for the substrate preparing polishing pad trimmer;
Step S102: form mask on the surface for the formation of finishing grain of described substrate;
Step S103: etch to form finishing grain on the substrate to described substrate, remove described mask.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (14)
1. a polishing pad trimmer, is characterized in that, to comprise on substrate and the working face being positioned at described substrate and multiple finishing grains of outstanding described working face, wherein, described finishing grain and described substrate are structure as a whole.
2. polishing pad trimmer as claimed in claim 1, it is characterized in that, described finishing grain is regularly arranged on the substrate, and the top of described finishing grain has at least two levels.
3. polishing pad trimmer as claimed in claim 1, is characterized in that, the top being positioned at the described finishing grain of the central area of described substrate is higher than the top of described finishing grain being positioned at other regions.
4. polishing pad trimmer as claimed in claim 1, it is characterized in that, the described working face of described substrate is plane, or has the projecting surface of radian, or has the projecting surface of at least Liang Ge stratum.
5. the polishing pad trimmer as described in any one of Claims 1-4, it is characterized in that, the described working face of described substrate is the projecting surface with radian, wherein, the fringe region of described substrate and the difference in height of middle section are R, further, 300 μm of >S>100 μm.
6. the polishing pad trimmer as described in any one of Claims 1-4, is characterized in that, the described working face of described substrate is the projecting surface with at least Liang Ge stratum, wherein, the difference in height of adjacent different estate is S, and, 50 μm of >S>10 μm.
7. the polishing pad trimmer as described in any one of Claims 1-4, is characterized in that, the described working face of described substrate is the projecting surface with at least Liang Ge stratum, and the quantitative range of wherein said stratum is 3-10.
8. the polishing pad trimmer as described in any one of Claims 1-4, is characterized in that, the quantity of described finishing grain to be successively decreased to outer ring by center or increased progressively.
9. the polishing pad trimmer as described in any one of Claims 1-4, is characterized in that, the shape of described finishing grain comprises tack cone post or tip cone post; And/or the altitude range of described finishing grain is 100-300 μm.
10. the polishing pad trimmer as described in any one of Claims 1-4, is characterized in that, the material of described substrate and described finishing grain is sapphire.
The manufacture method of 11. 1 kinds of polishing pad trimmers, is characterized in that, described method comprises:
Step S101: be provided for the substrate preparing polishing pad trimmer;
Step S102: form mask on the surface for the formation of finishing grain of described substrate;
Step S103: etch to form finishing grain on the substrate to described substrate, remove described mask.
The manufacture method of 12. polishing pad trimmers as claimed in claim 11, it is characterized in that, described substrate is sapphire substrate, and described step S101 comprises:
Step S1011: alumina raw material is carried out melt via high temperature furnace, carries out crystal pulling by specific axis to crystal seed, has cooled the growth of alumina single crystal, forms crystal bar;
Step S1012: cut into slices to described crystal bar along specific axis, forms substrate;
Step S1013: the surface of described substrate is repaired.
The manufacture method of 13. polishing pad trimmers as described in claim 11 or 12, is characterized in that, after described step S103, also comprise step S104:
Described substrate and described finishing grain are heat-treated, to repair the damage etching and cause.
The manufacture method of 14. polishing pad trimmers as described in claim 11 or 12, it is characterized in that, described finishing grain is regularly arranged on the substrate, and the top of described finishing grain has at least two levels.
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| CN201410134362.XA CN104972398A (en) | 2014-04-03 | 2014-04-03 | Polishing pad dresser and manufacturing method thereof |
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| CN201410134362.XA CN104972398A (en) | 2014-04-03 | 2014-04-03 | Polishing pad dresser and manufacturing method thereof |
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| CN201410134362.XA Pending CN104972398A (en) | 2014-04-03 | 2014-04-03 | Polishing pad dresser and manufacturing method thereof |
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