TWM481093U - Chemical mechanical polishing trimmer with adjustable tip height - Google Patents

Description

Chemical mechanical polishing dresser with adjustable tip height

This creator relates to a chemical mechanical polishing dresser that can adjust the height of the tip, especially a chemical mechanical polishing dresser that can adjust the tip direction, tip height or cutting edge angle for individual abrasive particles.

Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including ceramic, tantalum, glass, quartz, or metal wafers. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing. In particular, as the volume of the transistor shrinks, the number of chemical mechanical polishing processes increases. For example, in the 28 nm line width process, the number of chemical mechanical polishing processes can be as high as 30 times. .

The semiconductor industry currently spends more than $1 billion annually on manufacturing silicon wafers that must have very flat and smooth surfaces. There are many techniques for fabricating smooth and flat surface tantalum wafers. One of the most common processes is called chemical mechanical polishing (CMP), which involves the use of a polishing pad in combination with a slurry. The most important thing in all CMP processes is the uniformity of the wafer, the IC line. The smoothness of the road, the removal rate of the yield, the life of the CMP consumables, etc., allow the chemical mechanical polishing to achieve the highest level of performance.

In the chemical mechanical polishing process of semiconductors, the wafer (or other semiconductor components) is contacted by a polishing pad (Pad), and the polishing liquid is used as needed to pass the chemical reaction and physical mechanical force to remove the wafer. Impurity or uneven structure of the surface; when the polishing pad is used for a certain period of time, since the grinding debris generated by the grinding process is accumulated on the surface of the polishing pad, the polishing effect and the efficiency are lowered, and therefore, the conditioner can be used for grinding. The surface of the pad is ground to re-roughen the surface of the pad and maintain it in an optimal state of grinding.

In the prior art, as disclosed in the applicant's claim, the Republic of China Patent Publication No. 562719 discloses a conditioning disc capable of individually adjusting abrasive grains, which is characterized in that each of the individual abrasive grains is respectively welded with a welding material. The top surface of the metal rod is inserted into the pin hole of the metal plate at a specific position, and then the metal plate is buckled on a flat plate, and the height of the apex of each abrasive grain is controlled by a flat plate, and finally the glue is adhered. The knot material adheres the metal rod to the metal plate to form a high-precision trimming disc with an accurate distribution of abrasive grains and a uniform abrasive grain height.

In addition, another known technique of the Republic of China Patent Publication No. I228066 provides a state in which the trimming surface of the dresser for a polishing cloth can be adjusted, even if the shape of the front end of the grindstone particles causes an individual difference in the state of the trimming surface, It is possible to create a uniform surface of the polishing cloth, and to apply a polishing property suitable for the workpiece to the surface of the polishing cloth, and a dressing method for the polishing cloth used therein, so that the above-mentioned dresser is directed to the metal table The peripheral portion is provided with a dressing device for the polishing cloth having an annular finishing surface, which is respectively delivered through the trimming surface The first and second grindstone particle groups consisting of grindstone particles having mutually different particle sizes are arranged side by side, and the grindstone particles having the largest particle size among the grindstone particles are arbitrarily adjusted in the metal table. The adjustment mechanism of the height difference δ between the reference planes S1 and S2 of the front end is formed.

Conventional chemical mechanical polishing dressers mostly design the substrate to different protruding heights or groove depths, and then fix the abrasive particles, but the substrate and the bonding layer will generate thermal stress and thermal deformation during brazing, so that the formed The actual tip height and the expected tip height cause errors; in addition, the chemical mechanical polishing dresser of the foregoing case discloses that the individual abrasive grains or the group of grinding stones are fixed in the grooves of the substrate by using a metal rod or an adjusting mechanism. The chemical mechanical polishing dresser was designed to be of equal height or two height differences, but in fact it is not possible to further control the abrasive particles and grinding performance. In view of this, there is a need for a chemical mechanical polishing dresser that can adjust the height of the tip, in addition to first fixing the abrasive particles to the metal holder, and by controlling the working characteristics of each abrasive particle to obtain optimized polishing performance. .

The primary objective of this creation is to provide a scalloped height chemist polishing dresser that controls the tip direction, tip height or cutting edge angle of each abrasive particle for optimum abrasive performance.

In order to achieve the above object, the present invention provides a chemical mechanical polishing dresser capable of adjusting a tip height, comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of polishing bases, the polishing bases The bonding layer is fixed on the substrate, and each polishing base surface is provided One or more abrasive particles are disposed; wherein the substrate may have a plurality of grooves or have a plurality of through holes, so that the grinding bases are received in the grooves or the through holes, and by the The protruding height or through-hole of the polishing base controls the abrasive particles of the polishing base surfaces to have the same or different tip heights.

In the technochemical polishing dresser of the present invention, the tip height difference of the abrasive particles can be arbitrarily changed according to user requirements or grinding processing conditions, wherein the abrasive particles can have the same tip height. Having the chemical mechanical polishing dresser to present a flattened surface; or, the abrasive particles may have two or more tip heights, such that the chemical mechanical polishing dresser exhibits a multi-level height surface; in one aspect of the present creation The abrasive particles have two tip heights. In addition, in the technochemical polishing dresser of the present invention, the particle size of the abrasive particles may be arbitrarily changed according to user requirements or grinding processing conditions, wherein the abrasive particles may have the same or different Particle size, wherein, in one aspect of the present invention, the abrasive particles have the same particle size, so that the abrasive particles of the chemical mechanical polishing dresser have consistent polishing performance; in one aspect of the present creation The abrasive particles have different particle sizes such that the abrasive particles of the chemical mechanical polishing conditioner have variability in abrasive properties.

In the technochemical polishing dresser of the present invention, which has an adjustable tip height, the abrasive particles have two tip heights, wherein the abrasive particles can have a first tip height and a second tip height, and the abrasive particles The difference between the first tip height and the second tip height is from 20 micrometers to 100 micrometers. In one aspect of the present invention, the first tip height of the abrasive particles and the second The difference in tip height is from 40 microns to 60 microns. In addition, in the technochemical polishing dresser of the present invention, which can adjust the tip height, the abrasive particles have three, four, five or six tip heights, so that the abrasive particles further include a third tip height, Four tip heights, a fifth tip height, and a sixth tip height.

In the techno-chemical polishing dresser of the present invention, the surface of each grinding base is provided with one or a plurality of abrasive particles, wherein, in one aspect of the present invention, each polishing base surface is provided with An abrasive particle that can be fixed to each of the polishing bases by an abrasive bonding layer, or a plurality of abrasive particles disposed on the surface of each of the polishing bases, wherein the abrasive particles can be bonded by the abrasive bonding layer Fixed to each grinding base. In addition, in the above-mentioned technochemical polishing dresser of the adjustable tip height of the present invention, the abrasive particles may be surface-treated such that the abrasive particles have a specific cutting edge angle, a crystal structure, a tip height, and a tip direction. The various parameters described above may be arbitrarily changed depending on the needs of the user or the processing conditions of the polishing. Unlike traditional chemical mechanical polishing dressers, the grinding performance is limited by the hexagonal octahedral shape of the abrasive particles (eg, synthetic diamonds). The achievable tip height of the chemical mechanical polishing conditioner can be designed to have a specific shape. The abrasive particles are such that the abrasive properties of the abrasive particles are no longer limited by the limitation of the hexahedron, so that the cutting edges of the abrasive particles can be from 30 to 150 degrees; in one aspect of the present creation The abrasive grain has a cutting edge angle of 60 degrees; in another aspect of the creation, the abrasive grain has a cutting edge angle of 90 degrees. In addition, in the above-mentioned technochemical polishing dresser of the adjustable tip height, the grinding bases are arranged in the shape of concentric circles or radiated from the center to the periphery. The shape is arranged on the bonding layer.

In the technochemical polishing dresser of the present invention, the composition or size of the abrasive particles may be arbitrarily changed according to the conditions and requirements of the grinding process, and the abrasive particles may be synthetic diamonds, natural diamonds, polycrystals. Diamond, or cubic boron nitride; in one preferred aspect of the present invention, the abrasive particles are synthetic diamonds. In another aspect, the abrasive particles disposed on the polishing base have a particle size of 30 micrometers to 2,000 micrometers. In one aspect of the present invention, the abrasive particles disposed on the polishing base have a particle diameter of 800 micrometers. . Furthermore, the grinding base can have different shapes such as a cylindrical outer shape or a square column, and has an outer diameter of 3 mm to 20 mm. Therefore, the single base can be set on the grinding base according to the conditions of the grinding process or the needs of the user. Grinding particles or multiple abrasive particles. In one aspect of the creation, 60 to 70 grinding pedestals with a single abrasive particle can be placed on a 4-inch finisher substrate; in another aspect of the present invention, an 8-inch finisher A polishing base having 8 to 20 particles having a plurality of abrasive particles may be disposed on the substrate.

In the chemical mechanical polishing dresser of the present invention, the composition of the bonding layer can be arbitrarily changed according to the conditions and requirements of the grinding process, and the composition of the bonding layer can be ceramic material, brazing material, electroplating Materials, metal materials, or polymer materials, this creation is not limited to this. In addition, in the above-mentioned technochemical polishing dresser of the adjustable tip height, the polymer material may be an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin; the brazing material may be at least one selected from the group consisting of A group of iron, cobalt, nickel, chromium, manganese, cerium, aluminum, and combinations thereof. In one aspect of the present invention, the composition of the bonding layer is preferably epoxy resin.

In the chemical mechanical polishing dresser of the present invention, the composition of the abrasive bonding layer can be arbitrarily changed according to the conditions and requirements of the grinding processing, and the composition of the abrasive bonding layer can be a ceramic material or a brazing material. , electroplating materials, metal materials, or polymer materials, this creation is not limited to this. In addition, in the above-mentioned technochemical polishing dresser of the adjustable tip height, the polymer material may be an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin; the brazing material may be at least one selected from the group consisting of A group of iron, cobalt, nickel, chromium, manganese, cerium, aluminum, and combinations thereof. In one aspect of the present invention, the composition of the abrasive bonding layer is preferably a nickel-based metal solder.

In the chemical mechanical polishing dresser of the present invention, the material and size of the substrate can be arbitrarily changed according to the conditions and requirements of the grinding process, wherein the material of the substrate can be stainless steel, die steel, metal alloy, The present invention is not limited to ceramic materials or polymer materials or combinations thereof. In a preferred aspect of the present invention, the material of the substrate may be a stainless steel substrate.

In summary, the technochemical polishing dresser according to the present invention can adjust the working characteristics of each abrasive particle, for example, the tip direction, the tip height or the cutting edge angle, to optimize. Grinding performance.

1,2,3,4,5,6,7‧‧‧Chemical mechanical polishing dresser

10,20,30,40,50,60,70‧‧‧substrate

11,21,31,41,51,61,71‧‧‧bonding layer

12,12’,22,32,42,52,62,62’,72‧‧‧ground

13,13',23,33,43,53,63,63',73‧‧‧ abrasive particles

14,24,34,44,64,74‧‧‧ grooves

15,25,35,45,65,75‧‧‧through holes

1A to 1B are schematic views of a polishing base of the creation example 1 of the present invention.

1C to 1D are the chemical machines of the adjustable tip height of the creation example 1 Schematic diagram of the mechanical polishing dresser.

2A to 2B are schematic views of the chemical mechanical polishing dresser of the adjustable tip height of the second embodiment of the present invention.

3A to 3B are schematic views of the chemical mechanical polishing dresser of the adjustable tip height of the third embodiment of the present invention.

4A to 4B are schematic views of the chemical mechanical polishing dresser of the adjustable tip height of the fourth embodiment of the present invention.

Fig. 5 is a schematic cross-sectional view showing the chemical mechanical polishing dresser of the adjustable tip height of the third embodiment of the present invention.

6A to 6B are schematic views of the polishing base of the fifth embodiment of the present invention.

6C to 6D are schematic views of the chemical mechanical polishing conditioner of the adjustable tip height of the fifth embodiment of the present invention.

7A to 7B are schematic views of the chemical mechanical polishing dresser of the adjustable tip height of the sixth embodiment of the present invention.

The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate the other advantages and effects of the present invention from the disclosure herein. In addition, the present invention may be implemented or applied by various other specific embodiments, and various modifications and changes may be made without departing from the spirit of the invention.

Example 1

1A to 1C, FIG. 1A to FIG. 1B are schematic diagrams of a polishing base according to the first embodiment of the present invention, and FIGS. 1C to 1D are the first embodiment of the present invention. Schematic diagram of a chemical mechanical polishing dresser with adjustable tip height. Referring to FIG. 1A, a grinding base 12 made of stainless steel is first provided. The grinding base 12 is cylindrical and has an outer diameter of 3 mm. Secondly, an abrasive particle is disposed on the grinding base 12. 13. The abrasive particles 13 are fixed to the polishing base 12 by an abrasive bonding layer (not shown) of a brazing material, wherein the abrasive particles 13 are artificial diamond particles having a particle diameter of 800 μm. Next, referring to FIG. 1B, the abrasive particles 13' on the polishing base 12' may be processed through a surface treatment according to user requirements or grinding processing conditions, so that the abrasive particles 13' have specific The cutting edge angle, the crystal structure, the tip orientation and the tip height can be made into a plurality of grinding bases 12' as described above according to user requirements. Next, referring to FIG. 1C, a substrate 10 made of stainless steel is provided. The substrate 10 has a plurality of grooves 14. Alternatively, the substrate 10 has a plurality of through holes 15, as shown in FIG. 1D, and provides an epoxy. a bonding layer 11 of resin, the bonding layer 11 is disposed on the substrate 10, as shown in FIG. 1C, or the bonding layer 11 is disposed in the through hole 15, as shown in FIG. 1D; thereafter, a plurality of polishing pedestals are 12 is received in the grooves 14 or the through holes 15 , and the polishing base 12 is fixed on the substrate 10 by the bonding layer 11 to form the chemical mechanical polishing dresser 1 . In addition, the abrasive particles 13 having the protruding heights or through holes 15 of the polishing base 12 to control the surfaces of the polishing bases 12 have the same tip height. In the technochemical polishing dresser of the present invention, which can adjust the tip height, 60 to 70 grinding bases having a single abrasive grain can be disposed on the 4-inch substrate 10, and the grinding bases 12 are in the shape of concentric circles. The arrangement or the shape radiated from the center to the periphery is arranged on the bonding layer 11.

Example 2

Embodiment 2 is substantially the same as the preparation of the accommodating tip height CMP according to the foregoing Embodiment 1, except that the abrasive particles of Embodiment 1 have the same tip height and the same tip direction. The abrasive particles of Example 2 have the same tip height and different tip orientation. Referring to FIG. 2A and FIG. 2B, firstly, a grinding base 22 made of stainless steel is provided. The grinding base 22 has a cylindrical outer shape and an outer diameter of 3 mm. Secondly, a grinding is provided on the grinding base 22 The granules 23 are fixed to the grinding susceptor 22 by an abrasive bonding layer (not shown) of a brazing material, wherein the abrasive particles 23 are synthetic diamond particles having a particle diameter of 800 μm. Then, the abrasive particles 23 on the polishing base 22 are processed through a surface to make the abrasive particles 22 have different tip orientations, and a plurality of polishing bases 22 as described above can be fabricated according to user requirements. Next, a substrate 20 of stainless steel is provided, the substrate 20 having a plurality of grooves 24 as shown in FIG. 2A, or the substrate 20 has a plurality of through holes 25 as shown in FIG. 2B; and an epoxy resin is provided. The bonding layer 21 is disposed on the substrate 20 as shown in FIG. 2A, or the bonding layer 21 is disposed in the through hole 25 as shown in FIG. 2B; The seat 22 is received in the recesses 24 or the through holes 25, and the grinding base 22 is fixed to the substrate 20 by the bonding layer 21 to form the chemical mechanical polishing dresser 2. In addition, the abrasive particles 13 having the protruding heights of the polishing susceptors 12 to control the surfaces of the polishing pedestals 12 have the same tip height.

Example 3

Embodiment 3 is substantially the same as the preparation of the chemical mechanical polishing dresser of the adjustable tip height described in the foregoing Embodiment 1, except that the abrasive particles of Embodiment 1 have the same tip height, and Embodiment 3 The abrasive particles have different tip heights. Please refer to FIG. 3A and FIG. 3B , which are schematic diagrams of the chemical mechanical polishing dresser with adjustable tip height according to the third embodiment of the present invention. The present embodiment 3 can have different tip heights by controlling the protruding heights of the grinding bases 32 to control the abrasive particles 33 on the surfaces of the grinding bases 32 according to user needs or processing conditions, such as As shown in FIG. 3A, or by the through holes 35 to control the abrasive particles 33 on the surface of the polishing base 32, different tip heights are provided, as shown in FIG. 3A, and the bonding layer 31 is used. The polishing base 32 is fixed on the substrate 30 to form a chemical mechanical polishing trimmer 3, wherein the abrasive particles 33 can have a first tip height and a second tip height, and the first tip height of the abrasive particles 33 and The difference in the height of the second tip is 50 microns. Referring to FIG. 5, it is a schematic cross-sectional view of a chemical mechanical polishing dresser with adjustable tip height according to the third embodiment of the present invention. In FIG. 5, the abrasive particles 53a having the first tip height are indicated by black dots, and the abrasive particles 53b having the second tip height are indicated by white dots; further, the abrasive particles 53a having the first tip height and having the second tip The height difference of the abrasive particles 43b is 50 micrometers. This creation can be selected according to the needs of the user to adjust the tip height of the chemical mechanical polishing dresser 3 to achieve the desired grinding results.

Example 4

Embodiment 4 is substantially the same as the preparation of the accommodating tip height CMP according to the first embodiment, except that the first embodiment has the same tip height and tip directionality. Example 4 is that the abrasive particles have different tip heights and tip orientations. 4A and 4B are schematic views of a chemical mechanical polishing conditioner capable of adjusting tip height according to the fourth embodiment of the present invention. As shown in FIGS. 4A and 4B, the abrasive particles 43 fixed on the polishing base 42 are surface-treated so that the abrasive particles 43 have different tip orientations, and then the polishing bases 42 are The height of the protrusions is controlled to control the abrasive particles 43 on the surface of the polishing base 42 to have different tip heights, as shown in FIG. 4A, or the through holes 45 are used to control and control the surfaces of the polishing bases 42. The abrasive particles 43 have different tip heights, as shown in FIG. 4B, and the polishing base 42 is fixed on the substrate 40 by the bonding layer 41 to form a chemical mechanical polishing conditioner 4; wherein the abrasive particles are 43 may have a first tip height and a second tip height, and the difference between the first tip height and the second tip height of the abrasive particles 43 is 50 micrometers; in addition, the abrasive particles further include a third tip height and Four tip heights, and the difference between the third tip height and the fourth tip height of the abrasive particles is 80 microns.

Example 5

The preparation of the chemical mechanical polishing dresser of the adjustable tip height described in the foregoing embodiment 1 is substantially the same, except that the surface of the grinding base of the embodiment 1 is provided with one abrasive particle, and the embodiment 5 The surface of the grinding base is provided with a plurality of abrasive particles. Please refer to Figure 6A First, a polishing base 62 made of stainless steel is provided. The grinding base 62 has a cylindrical outer shape and has an outer diameter of 10 mm of the outer diameter of the polishing base 62. Secondly, on the grinding base 62 An abrasive particle 63 is provided which is fixed to the polishing base 62 by an abrasive bonding layer (not shown) of a brazing material, wherein the abrasive particles 63 are artificial particles having a particle diameter of 800 μm. Diamond particles. Next, referring to FIG. 6B, the abrasive particles 63' on the polishing base 62' may be processed through a surface treatment according to user requirements or grinding processing conditions, so that the abrasive particles 63' have specific The cutting edge angle, the crystal structure, the tip orientation and the tip height can be made into a plurality of polishing bases 62' as described above according to user requirements. Next, referring to FIG. 6C and FIG. 6D, a substrate 60 of stainless steel is provided. The substrate 60 has a plurality of grooves 64 as shown in FIG. 6C. Alternatively, the substrate 60 has a plurality of through holes 65. 6D, and providing an epoxy resin bonding layer 61, the bonding layer 61 is disposed on the substrate 60; after that, a plurality of polishing pedestals 62 are received in the grooves 64, and by the The bonding layer 61 fixes the polishing base 62 to the substrate 60 to form a chemical mechanical polishing conditioner 6. In addition, the polishing particles 63 of the surface of the polishing base 62 have the same tip height by the protruding heights of the polishing bases 62, as shown in FIG. 6C, or by the through holes 65 to control the The abrasive particles 63 on the surface of the polishing pedestal 62 have the same tip height. In the chemistry mechanical polishing dresser in which the height of the tip can be adjusted, 8 to 20 grinding bases having a plurality of abrasive grains can be disposed on the 8 inch substrate 20.

Example 6

The preparation of the chemical mechanical polishing dresser of the adjustable tip height described in the foregoing embodiment 5 is substantially the same, except that the abrasive particles of the embodiment 5 have the same tip height, and the embodiment 6 The abrasive particles do not have the same tip height. As shown in FIG. 7A and FIG. 7B, first, the abrasive particles 73 are subjected to surface processing to make the abrasive particles 73 have a specific tip orientation; secondly, the abrasive particles 73 are made of an abrasive of a brazing material. A bonding layer (not shown) is attached to the polishing base 72. A substrate 70 of a stainless steel material having a plurality of grooves 74 is provided, as shown in FIG. 7A, or a plurality of through holes 75 are provided. a substrate 70 made of stainless steel, as shown in FIG. 7B, and a bonding layer 71 of epoxy resin, wherein the bonding layer 71 is disposed on the substrate 70, as shown in FIG. 7A, or the bonding layer 71 is disposed on the substrate 70. The through holes 75 are as shown in FIG. 7B. Finally, the polishing bases 72 are received in the grooves 74, and the polishing base 72 is fixed on the substrate 70 by the bonding layer 71. a CMP polishing dresser 7 having an adjustable tip height; wherein the abrasive particles 73 can have a first tip height and a second tip height, and the first tip height and the second tip height of the abrasive particles 73 The difference is 50 microns.

In summary, the chemical mechanical polishing dresser with adjustable tip height obtained in the present embodiment can be used as a variety of different grinding processing conditions. The chemistry mechanical polishing dresser with adjustable tip height of this creation is a chemical polishing dresser that achieves the best grinding effect by controlling the direction, height and cutting edge angle of the abrasive particles.

The above embodiments are merely examples for convenience of explanation, and the scope of the claims claimed herein is based on the scope of the patent application, and not It is limited to the above embodiment.

1‧‧‧Chemical mechanical polishing dresser

10‧‧‧Substrate

11‧‧‧Combination layer

12’‧‧· Grinding base

13’‧‧· abrasive particles

15‧‧‧through holes

Claims (17)

A chemical mechanical polishing dresser capable of adjusting a tip height, comprising: a substrate; a bonding layer disposed on the substrate; and a plurality of polishing pedestals by the bonding layer Fixed on the substrate, and each polishing base surface is provided with one or a plurality of abrasive particles; wherein the substrate has a plurality of grooves or a plurality of through holes, so that the grinding bases are accommodated a groove or the through holes, and the abrasive particles of the polishing base surface having the same height or the same or different tip heights by the protruding heights of the grinding bases or the through holes. The chemical mechanical polishing dresser of the adjustable tip height according to claim 1, wherein the abrasive particles have two or more tip heights. The chemical mechanical polishing dresser of the adjustable tip height according to claim 1, wherein the abrasive particles have the same or different particle sizes. The chemical mechanical polishing dresser of the adjustable tip height according to claim 1, wherein the abrasive particles have a first tip height and a second tip height. The techno-chemical polishing dresser of the adjustable tip height according to claim 4, wherein the difference between the first tip height and the second tip height of the abrasive particles is 20 micrometers to 100 micrometers. The techno-chemical polishing dresser of the adjustable tip height according to claim 4, wherein the difference between the first tip height and the second tip height of the abrasive particles is 40 micrometers to 60 micrometers. The accommodating tip height chemical mechanical polishing dresser of claim 4, wherein the abrasive particles further comprise a third tip height, a fourth tip height, a fifth tip height, and a sixth tip height. The techno-chemical polishing dresser of the adjustable tip height according to claim 1, wherein each of the grinding base surfaces is provided with an abrasive particle. The chemical mechanical polishing dresser of the adjustable tip height according to claim 1, wherein the abrasive particles are fixed to each of the polishing bases by an abrasive bonding layer. The techno-chemical polishing dresser of the adjustable tip height according to the first aspect of the invention, wherein the grinding bases are arranged in a concentric circle shape or arranged in a shape radiating from the center to the bonding layer. The chemical mechanical polishing dresser of the adjustable tip height according to claim 1, wherein the abrasive particles are synthetic diamonds, natural diamonds, polycrystalline diamonds, or cubic boron nitride. The techno-chemical polishing dresser of the adjustable tip height according to claim 1, wherein the abrasive particles have a particle size of from 30 micrometers to 2,000 micrometers. The chemical mechanical polishing dresser of the adjustable tip height according to the first aspect of the invention, wherein the bonding layer is composed of a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. The chemical mechanical polishing dresser of the adjustable tip height as described in claim 8 is characterized in that the composition of the abrasive bonding layer is a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. The chemical mechanical polishing dresser of the adjustable tip height according to claim 13 or 14, wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and A group of combinations. The chemical mechanical polishing dresser of the adjustable tip height according to claim 13 or 14, wherein the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenol resin. The chemical mechanical polishing dresser of the adjustable tip height according to the first aspect of the invention, wherein the substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, a polymer substrate or a combination thereof.