TWM465659U - Chemical mechanical polishing conditioner - Google Patents

Description

Chemical mechanical polishing dresser

This creation relates to a chemical mechanical polishing dresser, and more particularly to a chemical mechanical polishing dresser having a flattened surface.

Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including integrated circuits, ceramics, tantalum, glass, quartz, or metal planes. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing. In particular, as the volume of the transistor shrinks, the number of chemical mechanical polishing processes increases. For example, in the 28 nm line width process, the number of chemical mechanical polishing processes can be as high as 30 times. .

The semiconductor industry currently spends more than $1 billion annually on manufacturing silicon wafers that must have very flat and smooth surfaces. There are many techniques for fabricating smooth and flat surface tantalum wafers. One of the most common processes is called chemical mechanical polishing (CMP), which involves the use of a polishing pad combined with a slurry. use. The most important of all CMP processes is the uniformity of the polished wafer, the smoothness of the IC line, the removal rate of the yield, the lifetime of the CMP consumables, etc., allowing the chemical mechanical polishing to achieve the highest level of performance.

In the chemical mechanical polishing process of semiconductors, the wafers (or other semiconductor components) are contacted by a polishing pad (Pad), and the polishing liquid is used in combination with the polishing pad to remove the wafer by chemical reaction and physical mechanical advantage. Impurity or uneven structure of the surface; when the polishing pad is used for a certain period of time, since the grinding debris generated by the grinding process is accumulated on the surface of the polishing pad, the polishing effect and the efficiency are lowered, and therefore, the conditioner can be used for grinding. The surface of the pad is ground to re-roughen the surface of the pad and maintain it in an optimal state of grinding. However, in the manufacturing process of the dresser, the polishing layer formed by mixing the abrasive particles and the bonding layer is disposed on the surface of the substrate, and the polishing layer is fixedly bonded to the surface of the substrate by hardening such as brazing or sintering, but only in the polishing layer. During the hardening process, due to the difference in thermal expansion coefficient between the polishing layer and the substrate, the surface of the substrate is often deformed, thereby deteriorating the flatness of the surface of the dresser, thereby affecting the polishing efficiency and service life of the dresser.

In the prior art, the patent application No. 100133909, which is incorporated by the creator, includes: a first single layer of superabrasive particles disposed and coupled to one side of a metal support layer; and a second single The layer of superabrasive particles is disposed and coupled to the opposite side of the first monolayer of the metal support layer. The second single layer superabrasive particles are in a position that has substantially the same distribution as the first monolayer superabrasive particles. Therefore, in the previous case, the phase of the superabrasive particles can be distributed on both sides of the metal support layer. Equal or substantially equal deformation forces, according to which the degree of deformation generated in each other in the metal supporting layer can be effectively removed, thereby reducing the variation in the relative height of the superabrasive particles relative to each other.

In addition, the Republic of China Patent Application No. 101118288, which is filed by the creator, includes: a substrate layer; and a single layer of superabrasive particles, which are a plurality of superabrasive particles embedded in the matrix layer, wherein each superabrasive The particle system protrudes from the matrix layer. The difference in protruding distance between the highest protruding tip of the single-layer superabrasive particle and the second highest protruding tip is less than or equal to about 20 microns, and the difference in protruding distance between the highest 1% protruding tip of the single-layer superabrasive particle is about 80 microns or smaller. The CMP pad conditioner of the prior art includes a layer of superabrasive particles having a substantially flattened tip on the entire working surface of the finished CMP pad conditioner. The chemical mechanical polishing pad conditioner having a substantially flattened tip configuration has a relatively uniform protruding distribution compared to the conventional dresser, so that the superabrasive particles are less likely to be pulled out from the substrate, and the scratch rate is also higher. low. In addition, the relatively uniform overhanging of the dresser provides for trimming the chemical mechanical polishing pad in this manner to promote a good polishing rate while extending the working life of the trimmer. For example, the uniform roughness and size distribution on a CMP pad will affect these superiorities.

In the above-mentioned chemical mechanical polishing dresser, the creator uses the distribution position of the abrasive particles to eliminate the deformation generated in the manufacturing process of the chemical mechanical polishing dresser, or to further control the protruding tip of the abrasive particles. The distance allows the chemical mechanical polishing dresser to form a flat surface and reduce the scratching of the workpiece being polished during the chemical mechanical polishing process. The injury rate, in turn, allows the chemical mechanical polishing dresser to have superior polishing efficiency and working life.

Accordingly, a chemical mechanical polishing dresser having a flattened abrasive surface is developed, which can improve the general chemical mechanical polishing dresser due to the limitation of the manufacturing method, and avoid the inconsistent protruding distance of the protruding tip of the abrasive particle to destroy the chemical mechanical polishing trimming. Surface flatness of the device.

The main purpose of this creation is to provide a chemical mechanical polishing dresser that can reduce the scratch rate of the workpiece to be polished by the flattened surface design of the chemical mechanical polishing dresser, thereby making the chemical mechanical polishing dresser superior. Grinding efficiency and working life.

To achieve the above object, the present invention provides a chemical mechanical polishing conditioner comprising: a substrate; a bonding layer disposed on the substrate; and an abrasive layer having a metal foil and a first abrasive particle layer The first abrasive particle layer is disposed above the metal foil, and the polishing layer is coupled to the substrate by the bonding layer; wherein the first abrasive particle layer comprises a plurality of abrasive particles, and the abrasive particles are protruded The tip has a flat surface such that the abrasive particles do not have one or a plurality of particularly prominent protruding tips, and the abrasive particles have a patterned arrangement, wherein the planarized surface can be a discontinuous plurality of abrasive particles protruding The tip is formed, for example, the protruding tip of up to 1,000 abrasive particles is not composed of the protruding tips of all adjacent continuous abrasive particles, and thus, Elimination of scratches and damage to the polishing pad by protruding tips with a particularly high degree of protrusion (so-called Killer diamond). In the chemical mechanical polishing conditioner of the present invention, a second abrasive particle layer may be further disposed under the metal foil, and the second abrasive particle layer is sandwiched between the metal foil and the metal foil. Bond between layers. Therefore, this creation will be able to reduce the scratch rate of the workpiece to be polished by the flattened surface design of the chemical mechanical polishing dresser, thereby making the chemical mechanical polishing dresser more excellent in polishing efficiency and working life. Further, in the CMP polishing dresser of the present invention, the protruding tips of the abrasive particles have a flat surface, and the protruding tips of the abrasive particles on the surface of the chemical mechanical polishing dresser have an equal tip height, so that The protruding tips of the abrasive particles can form a planarized surface.

The present work provides a chemical mechanical pad dresser and associated methods for trimming (eg, planarizing, polishing, and trimming) chemical mechanical polishing pads. The polishing pad conditioner of the present invention can be effectively utilized, for example, to trim a chemical mechanical polishing pad for polishing, processing, or otherwise trimming semiconductor materials. In particular, the focus of this creation is that the chemical mechanical polishing pad conditioner has abrasive particles that substantially flatten the tip. Conventional chemical mechanical polishing pad manufacturing methods, even though there are many techniques for flattening abrasive particles prior to fixation, generally the tip height of the entire finisher surface varies significantly. Often, the method of attaching the abrasive particles to the dresser support (i.e., the substrate) of the chemical mechanical polishing pad destroys the resulting planarization. On the other hand, the use of high temperature and/or high pressure to fix the abrasive particles to the surface of the chemical mechanical polishing dresser is used for the finishing When the device is cooled, the difference in thermal expansion coefficient between the polishing layer and the bottom substrate may cause warpage of the dresser support. Therefore, unless this warpage is avoided, the abrasive particles will not be able to maintain their flattened state after the dresser is cooled. This is especially the problem of using brazing technology.

Accordingly, the warpage of the metal support layer is minimized to maintain a better degree of planarization of the abrasive particle tip in the finished workpiece. When heating and/or pressurizing is used to make an abrasive workpiece, warping of the metal support layer can result in a large change in tip height even if the particles are flattened prior to heating and/or pressure treatment. By arranging the abrasive particles to distribute the warpage force on both sides of the metal support layer evenly or substantially evenly, the forces acting on the warpage of the metal support layer can be effectively offset each other, and thus the abrasive particles are also The relative height movement between the two is minimized.

In the CMP polishing dresser of the present invention, the abrasive particles of the first abrasive particle layer may have a single layer arrangement. Additionally, the second abrasive particle layer and the first abrasive particle layer can have the same abrasive particle pattern and distribution. Therefore, the present invention can effectively disperse the warping force on the sides of the metal supporting layer by the arrangement of the abrasive particles, and can effectively offset the force generated by the warpage of the metal supporting layer. Therefore, the relative height movement between the abrasive particles is also minimized. Further, in the above-described CMP polishing dresser, the abrasive particles may be directly disposed above the metal foil by heating or pressurization according to the foregoing, and on the other hand. The abrasive particles may also be coupled to the metal foil by an abrasive bonding layer to provide better bonding strength between the abrasive particles and the metal foil.

Since chemical mechanical planarization is planar polishing, the distribution of contact between the high point of the wafer and the high point of the polishing pad determines the quality (eg, yield) and efficiency (eg, throughput) of chemical mechanical planarization. If the high point of the polishing pad is unevenly distributed, the grinding rate of different parts of the wafer is different, and the surface of the wafer is not flat. What's more, in some places, the polishing pad may be excessive, resulting in the same layer of Dishing or Erosion; or, in some places, insufficient polishing may cause residue. If the thickness of the wafer after polishing is uneven (Within Wafer Non-Uniformity or WIWUU), the effect of chemical mechanical flattening will be insignificant. In view of this, the creation is based on many research improvements, especially by controlling the arrangement of the abrasive particles to adjust the height of the working sharp point to achieve the height distribution of the above-mentioned highest sharp point, avoiding the killer diamond and improving the grinding unit. The proportion of effective work grinding cusps. Wherein, the aforementioned killer diamond refers to abrasive particles (ie, diamond particles) having a higher protruding distance relative to the tip height of other abrasive particles on the surface of the chemical mechanical polishing conditioner.

Therefore, this creation can provide a chemical mechanical polishing dresser with a flat abrasive surface, in which sharp sharp points of the abrasive particles are used, but the cusp height distribution can be maintained, and the presence of "killer diamond" is avoided, thereby improving the grinding unit. The ratio of effective work grinding cusps increases the wafer removal rate and the life of the dresser. In the CMP polishing dresser of the present invention, the protruding tips of the abrasive particles have a flat surface indicating that the protruding tips of the abrasive particles on the surface of the chemical mechanical polishing dresser have an equal tip height (or protruding distance) ). Among them, the key concept of the flattened surface of the abrasive particles is to avoid the killer diamond on the workpiece being ground. (ie, polishing pad) damage, that is, because the tip height of the killer diamond is relatively higher than the tip height of other abrasive particles, and during the chemical mechanical polishing process, the killer diamond will produce excessive penetration of the workpiece being ground. Or infiltrate and cause damage to the scratched workpiece.

In order to further illustrate the tip flattening of the abrasive particles, the present invention can define the protruding tip of the abrasive particles into a flat surface by various means, including: using FRT (optical detection system produced by FRT (Fries Research & Technology GmbH)) Measuring the protruding tip of all the abrasive particles on the substrate of the chemical mechanical polishing dresser (ie, the back side substrate), for example, measuring the chemical mechanical polishing dresser made by the brazing method, having more than 30,000 grinding on the surface of the dresser The protruding tip of the particle. The measured height of the tip of the trimmer is measured, that is, the height of the protruding tip protrudes from the surface of the bonding layer, and the obtained height data is further calculated by a least square method to calculate a hypothetical plane composed of the sharp corners of the protruding tips. The assumed plane is the predetermined plane described above, and the protruding distance of the predetermined plane can be directly defined as 0, and the highest protruding tip refers to the height of the protruding tip of the protruding tips that most protrudes the predetermined plane, the second The highest protruding tip refers to the height of the protruding tip of the protruding tip that protrudes from the predetermined plane, and the other protruding tips are analogized.

However, in the grinding of a general chemical mechanical polishing dresser, only a protruding tip of about 300 abrasive particles can be measured to be worn after grinding at a magnification of 50 times, since about 30% of the abrasive particles are ground. Breakage occurs during the process, making the protruding tip of these abrasive particles lower than the original tip distance and causing the projection from all protruding tips It is assumed that the plane cannot be valid; therefore, according to the actual experience of the creator of the case, the top 1,000 protruding tips of all the abrasive particles should be defined as a flat surface, so that it can be trimmed by combined chemical mechanical polishing at a magnification of 50 times. A protruding tip of about 1,200 abrasive particles was measured in the device to cause wear after grinding.

Another more logical method of flat surface measurement is to apply a downward force of about 3 kg on the surface of the polishing pad using a dresser to perform a scratch test, wherein the maximum penetration depth is formed on the polishing pad (about 50 Micron) The protruding tip on the corresponding trimmer can be regarded as a killer diamond. However, due to the protruding distance of the abrasive particles or the arrangement pitch of each other is very small, there are still difficulties in actual measurement. .

Another flat surface is measured by contacting the abrasive surface of the dresser with the abrasive particles on a carbon paper placed on a flat surface (for example, a granite surface), and then marking the first three highest protruding tips by the carbon powder. The three points are defined as a flat surface. However, there is still a problem in this measurement method, that is, when the first three highest protruding tips measured are on the same side of the dresser, the three points will be linked. A sloping surface is formed, rather than the flat surface that is actually needed.

In another case, if the distance between the killer diamond and the other higher abrasive particles is farther, the killer diamond will be prone to damage and, in addition, the killer diamond lacks adjacent high abrasive particles to support the abrasive surface. Will cause the polishing pad surface to produce a larger scratch than usual.

In addition, the various ways in which the protruding tip of the abrasive particle is defined as a flat surface can be considered as the scope of the creation, and Creation is not limited to this. In one aspect of the creation, the FRT can be used to measure the protruding tip of all the abrasive particles on the dresser, and then the least square method is used to calculate a hypothetical plane composed of the sharp points of the protruding tips, and the abrasive particles and the imaginary The height deviation of the plane is defined as the flat surface of the protruding tip. Therefore, under the definition of the flat surface of the protruding tip, the used chemical mechanical polishing dresser can have 300 or more of the abrasive particles to be worn at a magnification of 50 times.

The CMP pad dresser of the present invention comprises a layer of abrasive particles having a substantially flattened tip on the entire working surface of the finished CMP pad conditioner. Various techniques can be used to maintain the flattening of the tip and any such technique is considered to be encompassed within the scope of this creation. In the CMP polishing dresser of the present invention, the flat surface can be formed by using a hypothetical plane as a reference surface, so that the protruding tip of the abrasive particle is compared with the hypothetical plane to form a flat surface, and the flattened surface can utilize FRT The protruding tip of the plurality of abrasive particles which are estimated to be discontinuous is formed not by the protruding tips of all the adjacent continuous abrasive particles, wherein the protruding tips of the abrasive particles are 1,000 to 30,000 or more, preferably The protruding tips of the abrasive particles were 1,000. In one aspect of the present creation, the hypothetical plane can use the FRT to measure the protruding tip of all the abrasive particles on the dresser (for example, the protruding tip of more than 30,000 abrasive particles), and then use the least square method to calculate a total The hypothetical plane formed by the pointed tip of the particle, or, in another aspect of the creation, the hypothetical plane can measure the protruding tip of up to 1,000 abrasive particles on the dresser using FRT, and then use the least squares method to calculate a burst of up to 1,000 abrasive particles The hypothetical plane formed by the sharp corners of the tip is defined by the height deviation of the abrasive particles from the imaginary plane as the flat surface of the protruding tip, wherein the two methods of estimating the assumed plane are compared with the protrusions of all the abrasive particles. The hypothetical plane estimated by the tip, the hypothetical plane estimated by the protruding tip of up to 1,000 abrasive particles to define a flat surface will give the protruding tip a better abrasive performance; in addition, the protruding tip of the abrasive particles can be The heights of the imaginary planes are compared and defined, wherein the protruding tip having the largest distance difference from the imaginary plane is defined as the highest protruding tip, and the protruding tip having the second largest distance difference compared to the imaginary plane is defined as the The two most prominent tips, the protruding tip with the 10th maximum distance difference compared to the imaginary plane is defined as the 10th highest protruding tip, and the protruding tip with the 100th maximum distance difference compared to the imaginary plane is defined as the 100 highest protruding tips, up to 1% of the maximum distance difference compared to the imaginary plane The tip is defined as the highest 1% protruding tip; therefore, the difference between the highest protruding tip and the second highest protruding tip is the difference between the highest protruding tip and the second highest protruding tip relative to the hypothetical plane, the highest protruding tip and the 10th The difference in the protruding distance of the highest protruding tip is the difference between the highest protruding tip and the 10th highest protruding tip relative to the hypothetical plane. The difference between the highest protruding tip and the 100th highest protruding tip is the highest protruding tip and the 100th The difference between the highest protruding tip and the assumed plane, the difference between the highest protruding tip and the highest 1% protruding tip is the difference between the highest protruding tip and the highest 1% protruding tip relative to the hypothetical plane, and the difference in the protruding distance of other protruding tips can be This principle is analogous.

In the CMP polishing dresser of the present invention, the protruding tips of the abrasive particles may be defined as having a flat surface according to the foregoing, wherein, in one aspect of the present invention, the highest protruding tip of the first abrasive particle layer And the difference in the protruding distance of the second highest protruding tip can be less than or equal to 20 microns. In another aspect of the present invention, the difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the second highest protruding tip may be less than or equal to 10 microns. In another aspect of the present invention, the difference in the protruding distance between the highest protruding tip of the first abrasive particle layer and the 10th highest protruding tip may be less than or equal to 20 micrometers. In still another aspect of the present invention, the difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the 100th highest protruding tip may be less than or equal to 40 microns. In still another aspect of the present invention, the difference in protrusion distance between the highest 1% protruding tip of the first abrasive particle layer may be less than or equal to 80 microns.

It should be noted that the definition of the flat surface of the protruding tip may be referred to the foregoing, which may be the difference in distance between the protruding tip of the abrasive particle and the hypothetical plane estimated by the FRT, and may include distribution throughout The surface of a single layer of abrasive particles or the dispersed area of a single layer of abrasive particles. For example, a top 1% protruding tip can be located around a single layer of abrasive particles. In one embodiment, the dispersed regions of the planarized abrasive particles can be located in a larger area of abrasive particles having a lower protruding distance than the planarized portions. The single layer abrasive particles can also include a plurality of planarized abrasive particle regions as described above, located in a larger area of abrasive particles having a lower protrusion distance.

Various chemical mechanical polishing dressers can be used in this creation. The method of measuring the height of the abrasive particles has determined the difference in the protruding distance between the tips. Therefore, any method that can be used to determine can be identified in the scope of this creation. It should be noted that for the purposes of this creation, the term "prominent" means the height of a particle relative to a reference point. Techniques for such measurements can include directly measuring the height of the tip relative to a reference point, which can be, for example, the highest abrasive particle tip, a bottom substrate, the bottom surface of the bonding layer, and the like. Since the matrix material of the bonding layer may be irregularly adsorbed by the capillary phenomenon on the periphery of the abrasive particles, it is problematic to measure the particle height from the surface of the matrix material. In the case where the matrix layer is uniform, this surface can be determined by the height of the particles. In addition, the relative protrusion or height distance difference between the two particles will be the difference in height of the particles measured by the usual reference points. Moreover, in some examples, the abrasive particles may be disposed along a bevel, curved surface, or other arrangement that is not parallel to the bottom substrate. In these examples, the protrusion height will align the bevel, curved surface, or other non-parallel to the bottom substrate alignment so that the bevel, curved surface, etc. can be ignored to measure the difference in relative protrusion height between the particles. It should be noted that in some examples, the flatness of the tip height of the abrasive particles can be independent of the setting or patterning of the abrasive particles throughout the surface of the finisher.

An example of a direct measurement technique that can include an optical scanning method that determines the position of the tip of the abrasive particle. In this method, an optical scanner can scan the surface of the rough forming conditioner to determine the height of the abrasive particle tip relative to the fixed point. For example, the scanner can scan down the space toward the dresser until the highest tip is positioned. The highest tip can be set to the reference point and the scanner continues in a direction toward the high dresser A scan is performed to measure the distance from the reference point to the tip of each abrasive particle of the entire finisher surface. According to this, the difference in the protruding distance between all the abrasive particles on the entire dresser can be directly measured. Further, the measuring technique may also include indirect measurements, for example, by arranging the single layer of abrasive particles to a deformable substrate to deform the substrate relative to the protruding distance of the particle tip. The single layer can be embedded in the deformable substrate and/or move the entire deformable substrate to form a scratch pattern thereon. The tip height can be inferred from this indirect measurement.

In the CMP polishing dresser of the present invention, the arrangement or orientation of the abrasive particles may be arbitrarily changed depending on the conditions and requirements of the grinding process, and the creation is not particularly limited. In the CMP polishing dresser of the present invention, the pattern arrangement of the abrasive particles may be an array pattern, a circular ring pattern, a concentric circular ring pattern, or a spiral ring pattern. On the other hand, the directionality is the abrasive particles having a specific directionality, and the abrasive particles may be a tip-polished surface, a planar abrasive surface, a ray-lined surface, or a combination thereof, and the creation is not Limited to this. In addition, the aforementioned tip grinding surface means that the tip of the abrasive grain faces the workpiece to be polished (for example, a polishing pad), so that the surface of the chemical mechanical dresser is a tip grinding surface composed of the tip of the abrasive particle; the plane grinding surface refers to the abrasive grain. The tip of the tip faces the horizontal plane parallel to the dresser, so that the surface of the chemical mechanical dresser is a plane grinding surface composed of the plane of the abrasive particles; the surface of the abrasive line means that the tip of the abrasive grain forms a oblique angle with the dresser, so that the chemical mechanical The surface of the dresser is a planar abrasive surface composed of a bevel of abrasive particles.

In the CMP polishing dresser of the present invention, the abrasive particles may be arranged in a predetermined pattern. This pattern can be a uniformly distributed map Case or non-uniformly distributed pattern. Further, various techniques for promoting the arrangement of the abrasive particles in a predetermined pattern can be considered as being within the scope of the creation. It should be understood that the predetermined meaning is a non-random pattern that has been determined prior to arranging the abrasive particles. In one aspect of the present creation, the predetermined pattern can also be applied to predetermine the distance between the particles. In an embodiment that is not limited to the present creation, the technique includes: arranging by a template, using a dispensing arrangement, arranging on a first substrate, and then subsequently transferring a particular pattern from the first substrate to a bottom substrate (eg, Metal support layer), in a similar manner and combinations thereof. Any single layer of abrasive particles can be temporarily fixed in a predetermined pattern using a variety of techniques, including: adhesion, location on the metal support substrate, support of the compound (eg, wax and the like, including Combination), and this creation is not limited to this. In another aspect of the present invention, the abrasive particles can be temporarily coupled to the metal support layer using an abrasive bonding layer (eg, an adhesive) that can be volatilized and eliminated during manufacture of the trimmer.

In the CMP polishing dresser of the present invention, it can be a chemical mechanical polishing pad conditioner having a substantially flattened tip configuration, which can have a relatively uniform protruding distribution compared with the conventional dresser. The abrasive particles are less likely to be pulled out of the bonding layer and have a lower scratch rate. In addition, the relatively uniform overhanging of the dresser provides for trimming the chemical mechanical polishing pad in this manner to promote a good polishing rate while extending the working life of the trimmer. In addition, the uniform roughness and size distribution on the CMP pad will affect these superiorities.

In the chemical mechanical polishing dresser of the present invention, the abrasive particles can be composed of various types of abrasive particles; in one aspect of the present creation, The abrasive particles may be synthetic diamonds, natural diamonds, polycrystalline diamonds (PCD), cubic boron nitride (CBN), or polycrystalline cubic boron nitride (PCBN); in another aspect of the creation, The abrasive particles may be synthetic diamonds; and in another aspect of the present invention, the abrasive particles may be polycrystalline diamonds, and the creation is not limited thereto. In addition, in the chemical mechanical polishing dresser of the present invention, the particle size of the abrasive grains may be determined according to the type of abrasive grains or the crystal form of the abrasive grains, or the surface roughness required for the grinding process; in one aspect of the creation, the grinding The particle size may range from 100 micrometers to 600 micrometers; in another aspect of the present invention, the abrasive particle size may be 500 micrometers, and the creation is not limited thereto. In addition, in the CMP polishing dresser of the present invention, the metal foil may be any soft sheet which allows the polishing layer to be easily attached to the substrate, or the foil may be any soft thin film capable of fixing the abrasive particles. Within the scope of this creation, for example, copper metal sheets, plastic sheets, or solder alloy sheets.

In the chemical mechanical polishing dresser of the present invention, the composition of the bonding layer or the abrasive bonding layer may be arbitrarily changed according to the conditions or requirements of the polishing process, wherein the bonding layer or the abrasive bonding layer may be a solder layer. An electroplated layer, a sintered layer, or a resin layer. In one aspect of the present invention, the bonding layer or the abrasive bonding layer is a solder layer, wherein the solder layer can be at least one selected from the group consisting of copper, iron, tin, nickel, cobalt, nickel, chromium, manganese, and antimony. a group of aluminum, titanium, boron, phosphorus, and combinations thereof. In another aspect of the present invention, the solder layer is a nickel based metal solder or a nickel cobalt alloy solder. In another aspect of the present invention, the solder layer is a copper tin-titanium alloy solder. In addition, in the chemical mechanical polishing dresser of the present invention, the substrate may be stainless steel, and the creation is not limited thereto. In addition, in the aforementioned creation of this creation The mechanical polishing dresser further includes a protective layer disposed on the surface of the polishing layer, the protective layer may cover the first abrasive particle layer and the metal foil, or the protective layer may cover the first abrasive particle layer and the abrasive layer The protective layer may be a nickel metal layer, a palladium metal layer, a diamond-like carbon layer, or a diamond film layer, or the like, and the protective layer is provided to provide a chemical mechanical polishing conditioner. Good corrosion resistance and service life.

Therefore, the chemical mechanical polishing dresser of the present invention can control the sharpening surface of the chemical mechanical polishing dresser by controlling the protruding distance of the protruding tip of the abrasive particles, thereby reducing the scratch rate of the workpiece to be polished, thereby making the chemical machinery The polishing dresser has superior grinding efficiency and working life.

10,20,30,40,50,60,70,80‧‧‧substrate

11,21,31,41,51,61,71,81‧‧‧ bonding layer

12‧‧‧Abrasive particles

22,32,42,52,62,72,82‧‧‧grinding layer

221a, 321, 421a, 521, 621a, 721a, 821a‧‧‧ first abrasive grain layer

221b, 421b, 621b, 721b, 821b‧‧‧ second abrasive grain layer

222,322,422,522,622,722,822‧‧‧metal foil

423,523‧‧‧Abrasive bonding layer

1A to 1D are flow charts showing the fabrication of a conventional chemical mechanical polishing conditioner.

2A to 2D are flowcharts showing the fabrication of the chemical mechanical polishing conditioner of the first embodiment of the present invention.

3A to 3D are flowcharts showing the fabrication of the chemical mechanical polishing conditioner of the second embodiment of the present invention.

4A and 4B are schematic views of the chemical mechanical polishing conditioner of the third embodiment of the present invention.

5A and 5B are schematic views of the chemical mechanical polishing conditioner of the creation example 4.

Figure 6 is a schematic view of the chemical mechanical polishing conditioner of the fifth embodiment of the present invention.

Figure 7 is a schematic view of the chemical mechanical polishing conditioner of the sixth embodiment of the present invention.

Figure 8 is a schematic view of the chemical mechanical polishing conditioner of the seventh embodiment of the present invention.

The embodiments of the present invention are described below by way of preferred embodiments, and those skilled in the art can readily appreciate other advantages and effects of the present invention from the disclosure of the present disclosure. The present invention may also be implemented or applied by other specific examples. The details of the present specification may also be based on different viewpoints and applications, and various modifications and changes may be made without departing from the spirit of the present invention.

Comparative example 1

Please refer to FIG. 1A to FIG. 1D , which are a flow chart of a conventional chemical mechanical polishing dresser. First, as shown in FIG. 1A and FIG. 1B, a bonding layer 11 is formed on a working surface of a substrate 10. The bonding layer 11 is a commonly used nickel-based metal solder, and the substrate 10 is made of stainless steel. Next, as shown in FIG. 1C, the abrasive particles 12 are disposed on the bonding layer 11, wherein the abrasive particles 12 can be controlled by a template (not shown) for spacing and arrangement, and a rigid plate can also be utilized ( The figure shows that the abrasive particles 12 are pressed downward to place the abrasive particles 12 on the surface of the bonding layer. Finally, as shown in FIG. 1D, the abrasive particles 12 are fixed to the substrate 10 by the polishing layer 11 by a heat hardening process, however, due to the bonding layer 11 (for example, the metal solder has a thermal expansion coefficient of about 14-15). The difference between the thermal expansion coefficients of the ppm/°C) and the substrate 10 (for example, the thermal expansion coefficient of stainless steel is about 16 ppm/°C) will be The mechanical polishing dresser will be deformed during the cooling process after hardening, and the bonding layer 11 and the abrasive particles 12 on the surface of the substrate 10 will also be deformed, as shown in Fig. 1D, at the center of the chemical mechanical dresser. The layer 11 and the abrasive particles 12 have a higher height than the outer ring region and form a deformed surface with a center higher than the outer side, thereby breaking the flatness of the surface of the dresser, thereby causing an easy scratch rate of the workpiece to be polished. Further, the polishing efficiency and the working life of the chemical mechanical polishing conditioner are deteriorated.

Example 1

The main purpose of this creation is to make the chemical mechanical polishing dresser have a flattened surface by controlling the protruding distance of the protruding tip of the abrasive particles, thereby reducing the scratch rate of the workpiece to be polished, thereby making the chemical mechanical polishing dresser superior. Grinding efficiency and working life. 2A to 2D are flowcharts showing the fabrication of the chemical mechanical polishing conditioner of the first embodiment of the present invention. Please refer to FIG. 2A. First, an abrasive layer 22 is provided. The polishing layer 22 has a first abrasive particle layer 221a, a metal foil 222 and a second abrasive particle layer 221b. The first abrasive particle layer 221a is located above the metal foil 222. The second abrasive particles 221b are disposed under the metal foil 222, and the metal foil 222 is interposed between the first abrasive particle layer 221a and the second abrasive particle layer 221b. The first abrasive particle layer 221a of the polishing layer 22 contains a plurality of abrasive particles. The protruding tips of the abrasive particles may be regarded as a flat surface, and the abrasive particles have a patterned arrangement of an array pattern, and the abrasive particles are all pointed upwards to form a directionality of a tip grinding surface, and further, the first The abrasive particles of the abrasive particle layer 221a are distributed in a single layer arrangement, and the first The second abrasive particle layer 221b has the same abrasive particle shape and distribution as the first abrasive particle layer 221a. Further, in the first embodiment, the abrasive particles of the first abrasive particle layer 221a and the second abrasive particle layer 221b are particles. The synthetic diamond having a diameter of 500 μm and the metal foil 222 are selected from a flexible sheet which allows the polishing layer 22 to be easily attached to the substrate and which can fix the abrasive particles, for example, a copper metal sheet, a plastic sheet, or a solder alloy sheet.

Next, as shown in FIG. 2B, the abrasive particles of the first abrasive particle layer 221a and the second abrasive particle layer 221b are embedded and fixed on both sides of the metal foil 222 by heating and pressurization. Finally, as shown in FIG. 2C and FIG. 2D, a substrate 20 of a stainless steel material and a bonding layer 21 of a copper-tin-titanium alloy solder are provided, and the bonding layer 21 is located above the substrate 20, and then the polishing layer 22 is disposed. Above the bonding layer 21, heat brazing is performed, so that the polishing layer 22 can be bonded and fixed to the substrate 20 by the bonding layer 21 to form a chemical mechanical polishing conditioner having a flattened surface. In addition, in the foregoing chemical mechanical polishing conditioner, a protective layer (not shown) of a nickel metal layer or a diamond-like layer may be further included, and the protective layer may be disposed on the surface of the polishing layer 22, and the protective layer is A chemical mechanical polishing dresser is provided for better corrosion resistance and service life.

Accordingly, the chemical mechanical polishing conditioner of the first embodiment includes: a substrate 20; a bonding layer 21 disposed on the substrate 20; and an abrasive layer 22 having a metal foil 222 And a first abrasive particle layer 221a, the first abrasive particle layer 221a is disposed above the metal foil 222, and the polishing layer 22 is coupled to the substrate 20 by the bonding layer 21, wherein the first polishing The particle layer 221a contains a plurality of Grinding particles, the protruding tips of the abrasive particles having a flat surface such that the abrasive particles do not have one or a plurality of particularly prominent protruding tips, and the abrasive particles have a patterned arrangement; further, the foregoing embodiment 1 The chemical mechanical polishing dresser further includes a second abrasive particle layer 221b, the second abrasive particle layer 221b is disposed under the metal foil 222, and the second abrasive particle layer 221b is sandwiched between the metal foil 222 and the combination Between the layers 21, in addition, the abrasive particles of the first abrasive particle layer 221a have a single layer arrangement, and the second abrasive particle layer 221b has the same abrasive particle shape and distribution as the first abrasive particle layer 221a.

In addition, in the aforementioned chemical mechanical polishing dresser, the FRT can be used to measure the protruding tip of up to 1,000 abrasive particles on the dresser, and then the least square method is used to calculate a hypothetical plane composed of the sharp points of the protruding tips, and The height deviation of the abrasive particles from the imaginary plane is defined as the flat surface of the protruding tip. In this embodiment 1, the protruding tips of the abrasive particles have a flat surface, wherein a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the second highest protruding tip is less than 20 micrometers, the first The difference between the protrusion point of the highest protruding tip of the abrasive particle layer and the 10th highest protruding tip is less than 20 micrometers, and the difference of the protruding distance of the highest protruding tip of the first abrasive particle layer and the 100th highest protruding tip is less than 40 micrometers, the first The difference between the protrusion points of the highest 1% protruding tip of the abrasive particle layer is less than 80 microns.

In the foregoing, the chemical mechanical polishing conditioner disclosed in Comparative Example 1 is a conventional manufacturing method in which abrasive particles and a bonding layer are first disposed on a substrate and heated to bond the abrasive particles by bonding. The brazing reaction of the layer is fixed on the substrate. However, due to the difference between the thermal expansion coefficients of the bonding layer and the substrate, the chemical mechanical polishing dresser will be deformed during the cooling process after hardening, and the surface of the substrate is caused. The bonding layer and the abrasive particles are also deformed accordingly, so the bonding layer and the abrasive particles at the center of the chemical mechanical dresser have a higher height than the outer ring region, and form a deformed surface whose center is higher than the outer side. The flatness of the surface of the dresser is destroyed, and the scratch rate of the workpiece to be polished is increased, and the polishing efficiency and working life of the chemical mechanical polishing dresser are deteriorated. Different from the manufacturing method and the composition structure of the conventional chemical mechanical polishing device, in the first embodiment of the present invention, since the abrasive particles have been previously bonded and fixed to the metal foil to form an abrasive layer, the polishing layer is disposed on the substrate and The bonding layer is heated and the polishing layer is fixed on the substrate by a brazing reaction of the bonding layer. Therefore, the CMP polishing dresser of the present invention can prevent the abrasive particles of the prior art from hardening or hardening. The chemical mechanical polishing dresser of the present invention can further improve the chemical mechanical polishing dresser by having a flattened surface by controlling the protruding distance of the protruding tips of the abrasive particles. Alternatively, the CMP polishing dresser of the present invention can simultaneously form the same deformation force on both sides of the metal foil by respectively arranging the abrasive particles having the same type and distribution on the two sides of the metal foil. In turn, the degree of deformation caused by the polishing layer after cooling after brazing can be effectively offset.

Example 2

3A to 3D are flowcharts showing the fabrication of the chemical mechanical polishing conditioner of the second embodiment of the present invention. The polishing layer different from the first embodiment has an abrasive particle layer on both sides, and the polishing layer of the embodiment 2 has a single side. Grinding the layer of particles. Referring to FIG. 3A, first, an abrasive layer 32 is provided. The abrasive layer 32 has a first abrasive particle layer 321 and a metal foil 322. The first abrasive particle layer 321 is located above the metal foil 322, and the first abrasive particles of the abrasive layer 32. The layer 321 comprises a plurality of abrasive particles, and the protruding tips of the abrasive particles can be regarded as a flat surface, and the abrasive particles have a patterned arrangement of an array pattern, and the abrasive particles are all pointed upwards to form a tip grinding The directionality of the surface, in addition, the abrasive particles of the first abrasive particle layer 321 are a single layer arrangement, the abrasive particles of the first abrasive particle layer 321 are artificial diamonds having a particle diameter of 500 micrometers, and the metal foil 322 is selected. It is easy to bond the polishing layer 32 to the substrate and the flexible sheet of the fixed abrasive particles, for example, a copper metal sheet, a plastic sheet, or a solder alloy sheet.

Next, as shown in FIG. 3B, the abrasive particles of the first abrasive particle layer 321 are embedded and fixed to one side of the metal foil 322 by heating and pressurization. Finally, as shown in FIG. 3C and FIG. 3D, a non-steel substrate 30 and a nickel-based metal solder bonding layer 31 are provided, and the bonding layer 31 is located above the substrate 30, and then the polishing layer 32 is disposed on the substrate 32. The bonding layer 31 is overheated and brazed so that the polishing layer 32 can be bonded and fixed to the substrate 30 by the bonding layer 31 to form a chemical mechanical polishing conditioner having a flattened surface.

Accordingly, the chemical mechanical polishing conditioner of the second embodiment includes: a substrate 30; a bonding layer 31 disposed on the substrate 30; And a polishing layer 32 having a metal foil 322 and a first abrasive particle layer 321 disposed on the metal foil 322, and the bonding layer 32 is bonded by the bonding layer 32. a layer 31 for coupling to the substrate 30, wherein the first abrasive particle layer 321 comprises a plurality of abrasive particles, the protruding tips of the abrasive particles having a flat surface, such that the abrasive particles do not have one or a plurality of special Significantly protruding tips, and the abrasive particles have a patterned arrangement, and the abrasive particles of the first abrasive particle layer 321 have a single layer arrangement.

Further, in the aforementioned chemical mechanical polishing conditioner, the protruding tips of the abrasive particles have a flat surface, wherein a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the second highest protruding tip is less than 20 micrometers. a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the 10th highest protruding tip is less than 20 micrometers, and a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the 100th highest protruding tip is less than 40 micrometers. The difference between the protrusion points of the highest 1% protruding tip of the first abrasive particle layer is less than 80 microns.

Different from the manufacturing method and the composition structure of the conventional chemical mechanical polishing device, in the second embodiment of the present invention, since the abrasive particles have been previously bonded and fixed to the metal foil to form an abrasive layer, the polishing layer is disposed on the substrate and The bonding layer is heated and the polishing layer is fixed on the substrate by a brazing reaction of the bonding layer. Therefore, the CMP polishing dresser of the present invention can prevent the abrasive particles of the prior art from hardening or hardening. The deformation and displacement problems that are easily caused during the cooling process, on the other hand, the chemical mechanical polishing dresser of the present invention can further control the protrusion of the abrasive particles. The protruding distance of the tip makes the chemical mechanical polishing dresser have a flattened surface, thereby reducing the scratch rate of the workpiece to be polished, thereby making the chemical mechanical polishing dresser more excellent in polishing efficiency and working life.

Example 3

4A and 4B are schematic views of a chemical mechanical polishing conditioner according to the third embodiment of the present invention. The third embodiment is substantially the same as the chemical mechanical polishing conditioner described in the first embodiment, except that the polishing layer of the first embodiment directly embeds the abrasive particles on both sides of the metal foil, and the third embodiment The abrasive layer is used to fix the abrasive particles to the sides of the foil by an abrasive bonding layer. Referring to FIG. 4A, an abrasive layer 42 is provided. The polishing layer 42 has a first abrasive particle layer 421a, a metal foil 422, an abrasive bonding layer 423, and a second abrasive particle layer 421b, wherein the first abrasive particle layer 421a is located on the metal foil. Above the 422, the second abrasive particles 421b are located under the metal foil 422, and the metal foil 422 is interposed between the first abrasive particle layer 421a and the second abrasive particle layer 421b, and the first abrasive particle layer 421a and the second abrasive particle layer 421b. The abrasive bonding layer 423 composed of copper tin-titanium alloy solder may be brazed and fixed to both sides of the metal foil 422. Next, as shown in FIG. 4B, a substrate 40 of a stainless steel material and a bonding layer 41 of a copper-tin-titanium alloy solder are provided, and the bonding layer 41 is located above the substrate 40, and then the polishing layer 42 is disposed on the substrate 40. The bonding layer 41 is heated and brazed so that the polishing layer 42 can be bonded and fixed to the substrate 40 by the bonding layer 41 to form a chemical mechanical polishing conditioner having a flattened surface.

Example 4

5A and 5B are schematic views of a chemical mechanical polishing conditioner according to the fourth embodiment of the present invention. The embodiment 4 is substantially the same as the chemical mechanical polishing conditioner described in the foregoing embodiment 2, except that the polishing layer of the embodiment 2 directly embeds the abrasive particles on one side of the metal foil, and the embodiment 4 The abrasive layer is such that the abrasive particles are fixed to one side of the foil by an abrasive bonding layer. Referring to FIG. 5A, an abrasive layer 52 is provided. The abrasive layer 52 has a first abrasive particle layer 521, a metal foil 522, and an abrasive bonding layer 523, wherein the first abrasive particle layer 521 is located above the metal foil 522, and the first polishing The particle layer 521 may be brazed to one side of the metal foil 522 by an abrasive bonding layer 523 composed of a nickel-based metal solder. Next, as shown in FIG. 5B, a non-steel substrate 50 and a nickel-based metal solder bonding layer 51 are provided, and the bonding layer 51 is located above the substrate 50, and then the polishing layer 52 is disposed thereon. The bonding layer 51 is bonded and fixed on the substrate 50 by the bonding layer 51 to form a chemical mechanical polishing conditioner having a flattened surface.

Example 5

Figure 6 is a schematic view of the chemical mechanical polishing conditioner of the fifth embodiment of the present invention. The embodiment 5 is substantially the same as the chemical mechanical polishing conditioner described in the foregoing embodiment 1, except that the abrasive layer particles of the embodiment 1 are all pointed upwards to form a tip-grinding surface, and the embodiment 5 The abrasive layer particles are all planar upwards to form the directionality of a planar abrasive surface. Referring to FIG. 6, an abrasive layer 62 is provided, the abrasive layer 62 having a first The abrasive particle layer 621a, the metal foil 622 and the second abrasive particle layer 621b, wherein the first abrasive particle layer 621a is located above the metal foil 622, the second abrasive particles 621b are located under the metal foil 622, and the metal foil 622 is sandwiched between the first polishing Between the particle layer 621a and the second abrasive particle layer 621b, the abrasive particles of the first abrasive particle layer 621a and the second abrasive particle layer 621b are embedded and fixed to the metal foil by heating and pressurizing. The two sides of the 622, wherein the abrasive particles are all pointed upwards to form a directionality of the tip grinding surface. Next, a substrate 60 of a stainless steel material and a bonding layer 61 of a copper-tin-titanium alloy solder are provided, and the bonding layer 61 is disposed above the substrate 60. Finally, the polishing layer 62 is disposed over the bonding layer 61. And performing heat brazing so that the polishing layer 62 can be bonded and fixed to the substrate 60 by the bonding layer 61 to form a chemical mechanical polishing conditioner having a flattened surface.

Example 6

Figure 7 is a schematic view of the chemical mechanical polishing conditioner of the sixth embodiment of the present invention. The embodiment 6 is substantially the same as the chemical mechanical polishing conditioner described in the foregoing embodiment 1, except that the abrasive layer particles of the embodiment 1 are all pointed upwards to form a tip-grinding surface, and the embodiment 6 The abrasive layer particles are all inclined upward to form the directionality of a ridged abrasive surface. Referring to FIG. 7, an abrasive layer 72 is provided having a first abrasive particle layer 721a, a metal foil 722, and a second abrasive particle layer 721b, wherein the first abrasive particle layer 721a is located above the metal foil 722, and second The abrasive particles 721b are located under the metal foil 722, and the metal foil 722 is sandwiched Between the first abrasive particle layer 721a and the second abrasive particle layer 721b, the abrasive particles of the first abrasive particle layer 721a and the second abrasive particle layer 721b are embedded and fixed by heating and pressurizing. On both sides of the metal foil 722, the abrasive particles are all inclined upward to form a directionality of a ridge polishing surface. Next, a substrate 70 of a stainless steel material and a bonding layer 71 of a copper-tin-titanium alloy solder are provided, and the bonding layer 71 is disposed above the substrate 70. Finally, the polishing layer 72 is disposed above the bonding layer 71. And heating and brazing, the polishing layer 72 can be bonded and fixed on the substrate 70 by the bonding layer 71 to form a chemical mechanical polishing conditioner having a flattened surface.

Example 7

Figure 8 is a schematic view of a chemical mechanical polishing conditioner of the present invention. Embodiment 7 is substantially the same as the chemical mechanical polishing conditioner described in the foregoing Embodiment 1, except that the abrasive layer particles of Embodiment 1 are all pointed upwards to form a directionality of a tip grinding surface, and Embodiment 7 The abrasive layer particles are partially pointed upward and partially planar upward to form a directivity of the tip-polished surface and the planar abrasive surface. Referring to FIG. 8, an abrasive layer 82 is provided having a first abrasive particle layer 821a, a metal foil 822, and a second abrasive particle layer 821b, wherein the first abrasive particle layer 821a is located above the metal foil 822, and second The abrasive particles 821b are located under the metal foil 822, and the metal foil 822 is interposed between the first abrasive particle layer 821a and the second abrasive particle layer 821b, and the abrasive particles of the first abrasive particle layer 821a and the second abrasive particle layer 821b are used. Heating and pressurizing The abrasive particles are embedded and fixed on both sides of the metal foil 822, wherein the abrasive particles at the center are directed upward to form a directionality of the tip grinding surface, and the abrasive particles at the periphery are planar upwards. To form the directionality of a planar abrasive surface. Next, a substrate 80 of a stainless steel material and a bonding layer 81 of a copper-tin-titanium alloy solder are provided, and the bonding layer 81 is disposed above the substrate 80. Finally, the polishing layer 82 is disposed above the bonding layer 81. And performing heat brazing so that the polishing layer 82 can be bonded and fixed to the substrate 80 by the bonding layer 81 to form a chemical mechanical polishing conditioner having a flattened surface.

The above-described embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

20‧‧‧Substrate

21‧‧‧Combination layer

22‧‧‧Abrasive layer

221a‧‧‧First abrasive grain layer

221b‧‧‧Second abrasive grain layer

222‧‧‧metal foil

Claims (26)

A chemical mechanical polishing dresser comprising: a substrate; a bonding layer disposed on the substrate; and an abrasive layer having a metal foil and a first abrasive particle layer, the first abrasive particle layer Is disposed above the metal foil, and the polishing layer is coupled to the substrate by the bonding layer; wherein the first abrasive particle layer comprises a plurality of abrasive particles, and the protruding tips of the abrasive particles have a The flat surface is such that the abrasive particles do not have one or a plurality of particularly pronounced protruding tips, and the abrasive particles have a patterned arrangement. The chemical mechanical polishing conditioner according to claim 1, further comprising a second abrasive particle layer disposed under the metal foil, and the second abrasive particle layer is interposed Between the metal foil and the bonding layer. The CMP polishing dresser of claim 1, wherein the abrasive particles of the first abrasive particle layer have a single layer arrangement. The chemical mechanical polishing conditioner of claim 1 or 2, wherein the second abrasive particle layer and the first abrasive particle layer have the same abrasive particle type and distribution. The CMP polishing dresser of claim 1, wherein the abrasive particles are coupled to the metal foil by an abrasive bonding layer. The chemical mechanical polishing conditioner of claim 1, wherein a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the second highest protruding tip is less than or equal to 20 micrometers. The chemical mechanical polishing conditioner according to claim 6, wherein a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the second highest protruding tip is less than or equal to 10 micrometers. The chemical mechanical polishing conditioner according to claim 1, wherein a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the tenth highest protruding tip is less than or equal to 20 micrometers. The chemical mechanical polishing conditioner according to claim 1, wherein a difference in protruding distance between the highest protruding tip of the first abrasive particle layer and the 100th highest protruding tip is less than or equal to 40 micrometers. The chemical mechanical polishing conditioner of claim 1, wherein a difference in protrusion distance between the highest 1% protruding tip of the first abrasive particle layer is less than or equal to 80 micrometers. The CMP polishing dresser of claim 1, wherein the flat surface is formed by a hypothetical plane as a reference surface such that the protruding tips of the abrasive particles form a flat surface compared to the hypothetical plane. The CMP polishing dresser of claim 11, wherein the flattened surface is formed by FRT measurement of a protruding tip of a plurality of discrete abrasive particles. The chemical mechanical polishing conditioner according to claim 12, wherein the abrasive particles have a protruding tip of 1,000 to 30,000 or more. The chemical mechanical polishing conditioner according to claim 13, wherein the abrasive particles have a protruding tip of 1,000. The chemical mechanical polishing conditioner according to claim 1, wherein the used chemical mechanical polishing dresser has 300 or more abrasive particles to be worn at a magnification of 50 times. The CMP polishing dresser of claim 1, wherein the pattern arrangement is an array pattern, a circular ring pattern, a concentric circular ring pattern, or a spiral ring pattern. The chemical mechanical polishing conditioner according to claim 1, wherein the abrasive particles are synthetic diamonds, natural diamonds, polycrystalline diamonds, cubic boron nitride, or polycrystalline cubic boron nitride. The chemical mechanical polishing conditioner of claim 1, wherein the abrasive particles have a particle size of between 100 micrometers and 600 micrometers. The chemical mechanical polishing conditioner according to claim 1, wherein the bonding layer is a solder layer, a plating layer, a sintered layer, or a resin layer. The chemical mechanical polishing conditioner of claim 19, wherein the bonding layer is a solder layer. The CMP polishing dresser of claim 5, wherein the abrasive bonding layer is a solder layer, a plating layer, a sintered layer, or a resin layer. The CMP polishing dresser of claim 21, wherein the abrasive bonding layer is a solder layer. The chemical mechanical polishing conditioner according to claim 20 or 22, wherein the solder layer is at least one selected from the group consisting of copper, iron, tin, nickel, cobalt, nickel, chromium, manganese, lanthanum, aluminum, titanium, a group consisting of boron, phosphorus, and combinations thereof. The chemical mechanical polishing conditioner according to claim 1, wherein the substrate is a stainless steel substrate. The chemical mechanical polishing dresser of claim 1, further comprising a protective layer disposed on the surface of the polishing layer. The chemical mechanical polishing conditioner according to claim 25, wherein the protective layer is a nickel metal layer, a palladium metal layer, a diamond-like carbon layer, or a diamond film layer.