TW201912308A - Polishing pad conditioner - Google Patents

Abstract

A polishing pad conditioner is provided in the instant disclosure. The polishing pad conditioner at least includes a composite base and a polishing portion. The composite base includes a deformed base and a buffer solder layer formed thereon, in which the deformed base has deformed during a heat curing process and has a curved surface. The buffer solder layer covers the curved surface. The polishing portion is disposed on the composite base and includes a connecting layer and a plurality of polishing particles separately disposed in the connecting layer to form a plurality of cutting tips. A temperature of the solidus line to which the buffer solder layer corresponds is higher than that of the liquidus line to which the connecting layer corresponds.

Description

 Polishing pad dresser  

The present invention relates to a polishing pad conditioner for use in a chemical mechanical polishing process, and more particularly to a polishing pad conditioner suitable for conditioning a polishing pad.

Chemical mechanical polishing is one of the most commonly used methods for planarizing semiconductor wafer surfaces. In a CMP process, a polishing pad is used in conjunction with a polishing solution to polish the surface of the semiconductor wafer. In the chemical mechanical polishing process, the polishing pad dressing device is used to trim the surface of the polishing pad, remove the waste generated when the wafer is polished, and restore the roughness of the polishing pad to maintain the stability of the polishing quality.

Existing polishing pad finishing devices typically include a substrate and a diamond abrasive layer disposed on one side of the substrate. In the prior art process of making a polishing pad finishing device, a solder layer is first formed on a flat working surface of the substrate. Subsequently, the diamond particles are evenly spread over the solder layer, and the height difference between the tips of the diamond particles is less than 100 μm. Thereafter, a brazing treatment is applied at a temperature of about 1000 ° C so that the diamond particles can be fixed to the working surface of the substrate through the solder layer.

However, since the thermal expansion coefficients of the solder layer and the substrate are different, and the cooling speed of the center and the edge of the substrate is uneven during the heating and brazing process, the substrate is deformed, thereby causing the tip height of the plurality of diamond particles after the subsequent brazing. The drop has increased. In detail, the deformation of the substrate causes the originally flat working surface to become a convex surface that is convex toward the center by the edge, or a concave surface that is concave from the edge toward the center. The convex or concave working surface also causes the height drop (about 100 μm to 300 μm) between the tips of the plurality of diamond particles bonded to the working surface to be too large. If the height difference between the sharp points of these diamond particles is too large (greater than 50 μm), when the polishing pad is trimmed, the flatness of the surface of the polishing pad is lowered, thereby affecting the polishing quality. As the line width of the integrated circuit is gradually reduced, the requirements for the polishing pad conditioner are also increased. Further, when performing a chemical mechanical polishing process on a wafer having a line width of less than 45 nm, the flatness of the polishing pad must be higher to avoid scratching (Micro-Scratches) wafers or causing metal line recesses (Dishing ) and the phenomenon of erosion (Erosion).

In the patent I530361, which has been published in the Republic of China, a substrate having a curved working surface is provided from the beginning to compensate for the amount of deformation of the substrate during the hardening heat treatment. However, it is difficult to process a substrate having a curved working surface by processing, and the accuracy is difficult to control.

In addition, the amount of deformation and the area of each substrate heating may be affected by parameters such as material density, solder layer material, heating temperature, cooling rate, and the like. Since the final deformation condition of the substrate is difficult to predict each time, the parameters of the process are difficult to control until after each heating, the height difference between the sharp points of the diamond particles can be expected to meet the expected result.

The technical problem to be solved by the present invention is to reduce the problem that the height difference between the plurality of cutting tips of the surface of the polishing pad conditioner is excessive due to thermal deformation of the susceptor.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a method for manufacturing a polishing pad conditioner and a polishing pad conditioner manufactured using the same. The polishing pad conditioner includes a composite base and an abrasive portion. The composite base includes a deformation base and a buffer solder layer formed on the base. At least one surface of the deformation base is a curved surface, and the buffer solder layer covers the curved surface. The grinding portion is disposed on the composite base and includes a bonding layer and a plurality of abrasive particles dispersedly disposed in the bonding layer. The plurality of abrasive particles each have a plurality of cutting tips that protrude from a polishing surface of the bonding layer, wherein the temperature of the heated solidus line corresponding to the buffer solder layer is greater than the temperature of the heated liquidus corresponding to the bonding layer.

Another technical solution adopted by the present invention is to provide a method of manufacturing a polishing pad conditioner. First, a composite base is provided. The composite base includes a base and a buffer solder layer formed on the base, wherein the base has at least one curved surface and the buffer solder layer covers the curved surface. Next, a planarization step is performed on the composite base to form a flat surface on one side of the composite base. Subsequently, a polishing portion is formed on the flat surface, wherein the polishing portion includes a bonding layer and a plurality of abrasive particles dispersedly disposed in the bonding layer, and the plurality of polishing particles respectively have an abrasive surface protruding from the bonding layer Multiple cutting tips.

The invention has the beneficial effects that the polishing pad conditioner and the manufacturing method thereof provided by the technical solution of the present invention provide a composite base including a buffer solder layer and a pedestal before forming the polishing portion, and during the curing process of the buffer solder layer The pedestal has been previously deformed to have a curved surface, and then a flat surface on one side of the composite base is formed by processing the planarization step. When the polishing portion is formed on the pedestal, since the susceptor has been deformed in advance, and the cured buffer solder layer is combined with the pedestal to limit the deformation of the susceptor, the morphological variable of the susceptor when performing the heating brazing process Will be greatly reduced. Therefore, the height drop of the cutting tips of the plurality of abrasive particles of the grinding portion is less affected by the thermal deformation of the susceptor, and can meet the practical application requirements.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

P1, P2, P1', P2', P3, P4‧‧‧ polishing pad dresser

1"‧‧‧ Initial base

1a", 1a', 1a‧‧‧ top

1b", 1b', 1b‧‧‧ bottom

2"‧‧‧ Buffer solder

1', 1‧‧‧ pedestal

2, 2'‧‧‧buffer solder layer

2S, 2S', 2S" ‧‧‧ outside surface

3‧‧‧ Grinding Department

31‧‧‧Abrasive particles

31t‧‧‧ cutting tip

30‧‧‧Combination layer

30S‧‧‧Abrased surface

M1, M1', M1", M2, M2', M2", M3, M3', M4, M4'‧‧‧ composite base

S100~S300‧‧‧ Process steps

1 is a flow chart of a method of manufacturing a polishing pad conditioner of one embodiment of the present invention.

2A is a cross-sectional view of the polishing pad conditioner of FIG. 1 in step S100 of FIG. 1 according to an embodiment of the present invention.

2B is a cross-sectional view of a composite chassis in accordance with an embodiment of the present invention.

2C is a cross-sectional view of the polishing pad conditioner of FIG. 1 in step S200 of FIG. 1.

2D is a cross-sectional view of the polishing pad conditioner of FIG. 1 in step S300 of FIG. 1.

2E is a cross-sectional view of the polishing pad conditioner in step S200 of FIG. 1 according to another embodiment of the present invention.

2F is a cross-sectional view of the polishing pad conditioner in step S300 of FIG. 1 according to another embodiment of the present invention.

3A is a cross-sectional view of the polishing pad conditioner in step S100 of FIG. 1 according to another embodiment of the present invention.

3B is a cross-sectional view of a composite base according to another embodiment of the present invention.

3C is a cross-sectional view of the polishing pad conditioner in step S200 of FIG. 1 according to another embodiment of the present invention.

3D is a cross-sectional view of the polishing pad conditioner in step S300 of FIG. 1 according to another embodiment of the present invention.

3E is a cross-sectional view of the polishing pad conditioner in step S200 of FIG. 1 according to still another embodiment of the present invention.

FIG. 3F is a cross-sectional view of the polishing pad conditioner in step S300 of FIG. 1 according to still another embodiment of the present invention.

4A is a cross-sectional view of the polishing pad conditioner in step S100 of FIG. 1 according to still another embodiment of the present invention.

4B is a cross-sectional view of the polishing pad conditioner in step S200 of FIG. 1 according to still another embodiment of the present invention.

4C is a cross-sectional view of the polishing pad conditioner in step S300 of FIG. 1 according to still another embodiment of the present invention.

5A is a cross-sectional view of the polishing pad conditioner in step S200 of FIG. 1 according to another embodiment of the present invention.

FIG. 5B is a cross-sectional view of the polishing pad conditioner in step S300 of FIG. 1 according to another embodiment of the present invention.

Please refer to FIG. 1 and FIG. 2A to FIG. 2D. 1 is a flow chart of a method of manufacturing a polishing pad conditioner of one embodiment of the present invention. 2A to 2D are respectively schematic cross-sectional views of the polishing pad conditioner of the embodiment of Fig. 1 in an embodiment of the present invention.

As shown in FIG. 1, in step S100, a composite base is provided. The composite base includes a base and a buffer solder layer formed on the base, wherein the base has at least one curved surface, and the buffer solder layer covers the curved surface.

Referring to FIG. 2A and FIG. 2B, the flow of providing a composite base is illustrated. Specifically, as shown in FIG. 2A, a buffer solder 2 is formed on an initial pedestal 1".

The material of the initial pedestal 1" may be iron, molybdenum, tungsten, stainless steel, invar or nickel-based superalloy. In one embodiment, the material of the initial pedestal 1" is stainless steel. Further, the initial base 1" has a top surface 1a" and a bottom surface 1b" opposite to the top surface 1a". In the present embodiment, the buffer solder 2" is formed on the top surface 1a" of the initial susceptor 1". However, in other embodiments, the buffer solder 2" may be formed on the bottom surface 1b" of the initial susceptor 1".

In addition, it should be noted that in FIG. 2A, only the buffer solder 2" is first formed on the initial susceptor 1", and no abrasive particles are provided.

The buffer solder 2" may be a foil, a paste, or a mixture of a glue (such as a resin) and a solder powder. For different implementations, it may be through various technical means known at present. The buffer solder 2" is formed on the initial susceptor 1", and the present invention is not limited.

In one embodiment, when the buffer solder 2" is a soldering piece, the soldering piece is fixed to the initial base 1" by spot welding or a glue, such as a liquid glue, a glue or a double. Face glue. When the soldering piece is directly fixed on the initial base 1" as a glue, the soldering piece may be warped from the side or the corner in the subsequent high-temperature heat treatment, and is curved. Therefore, in an embodiment, If the soldering piece is fixed to the initial base 1" by the rubber material, during the process of performing the heating brazing process, another piece of material, such as a graphite block, may be used to apply a pressing force to the soldering piece to avoid the soldering piece. Warp from the side or corner during heat curing.

In another embodiment, the buffer solder 2" is a mixture of solder powder and resin. In this embodiment, there are two ways to form the buffer solder 2" on the initial susceptor 1". One of them is soldering first. The powder and the resin (or other rubber compound) are mixed to form a cake-like solder cake, and the solder cake is attached to one surface (top surface 1a) or bottom surface 1b" of the initial base 1". The other is to directly apply the resin (or other rubber compound) to the top surface 1a" or the bottom surface 1b" of the initial base 1", and then sprinkle the solder powder on the resin. The foregoing rubber compound may be sprayed. Liquid glue or double-sided tape. Alternatively, you can attach the double-sided tape to the double-sided tape and then apply the solder powder.

It should be noted that the melting point of the buffer solder 2" cannot be less than the process temperature of the subsequent formation of the polishing portion. In an embodiment, the buffer solder 2" may be selected to be solder suitable for soldering with the material of the initial susceptor 1". In the example, when the initial susceptor 1" is stainless steel, the buffer solder 2" may be selected from amorphous nickel-based solder, wherein the melting point of the generally amorphous nickel-based solder or the corresponding solidus temperature may be 883 ° C. Up to 1052 ° C. The aforementioned amorphous nickel-based solder is, for example, AWS BNi5a or AWS BNi5b, and the corresponding solidus temperature is 1052 ° C and 1030 ° C. In addition, in the present embodiment, the thickness of the buffer solder 2" is between Between 25 and 500 μm.

Next, referring to FIG. 2B, a heat curing process is performed to melt the buffer solder 2" and then form a buffer solder layer 2'. The initial susceptor 1" is deformed after performing heat curing treatment with the buffer layer 2'. Base 1'. In other words, the susceptor 1' is actually a deformed susceptor that is thermally deformed by high temperature, so that the top surface 1a' (or the bottom surface 1b') of the susceptor 1' is curved. The aforementioned curved surface may be an upper curved surface or a lower curved surface. Accordingly, the composite chassis M1" includes the susceptor 1' and the buffer solder layer 2'.

According to the above, in the process of performing the heat curing process, the initial susceptor 1" and the buffer solder 2" are heated up to the temperature of the corresponding liquidus of the buffer solder 2" and then cooled. In this process, due to the initial pedestal The thermal expansion coefficient of 1" and the difference in thermal expansion coefficient of the buffer solder 2", as well as the initial susceptor 1" itself, differ from the cooling rate at the periphery, causing the initial pedestal 1" to deform, forming a substantially curved body. The base 1'. In the present embodiment, the central portion of the base 1' protrudes from the edge portion, thereby forming the upper surface 1a' and the bottom surface 1b' of the base 1' to form an upper curved surface.

In addition, after the high temperature melting and cooling, the buffer solder 2" is fixed on the susceptor 1' to form the buffer solder layer 2. As shown in Fig. 2B, the buffer solder layer 2' is adapted to the deformation of the susceptor 1'. There is an arcuate outer side surface 2S' and an arcuate inner side surface, wherein the curved inner side surface is connected to the top surface 1a' of the base 1'.

Next, please refer to FIG. 1 , FIG. 2B and FIG. 2E . In step S200, a planarization step is performed on the composite base to form a flat surface on one side of the composite base. The aforementioned flattening step may be a single-sided flattening step or a double-sided flattening step. In an embodiment, the planarization step can be performed by a grinder, a cutter or a grinding wheel.

Specifically, please refer to FIG. 2B. In the embodiment of FIG. 2B, a double-sided planarization step is performed on the composite base M1" along the dashed line depicted in FIG. 2B to form a flat surface on opposite sides of the composite base M1.

Further, in the present embodiment, a part of the buffer solder layer 2' and a part of the susceptor 1' are removed, so that the outer side surface 2S of the buffer solder layer 2 and the bottom surface 1b of the susceptor 1 both form a flat surface. Further, the outer surface 2S of the buffer solder layer 2 and the bottom surface 1b of the susceptor 1 are substantially parallel.

That is, in this step, the parallelism tolerance between the outer side surface 2S of the buffer solder layer 2' and the bottom surface 1b of the susceptor 1 can be reduced by the double-sided flattening step. In an embodiment, the parallelism tolerance between the outer side surface 2S of the buffer solder layer 2 and the bottom surface 1b of the susceptor 1 does not exceed 20 μm.

It should be noted that the top surface 1a' of the susceptor 1 in contact with the buffer solder layer 2 is still a curved surface, and the thickness of the buffer solder layer 2 matches the contour of the curved surface, and gradually increases or decreases from the periphery of the buffer solder layer 2 toward the center. In the present embodiment, since the top surface 1a' of the susceptor 1 is an upper curved surface, the thickness of the buffer solder layer 2 is gradually decreased from the periphery toward the center. In addition, after the double-sided flattening step, the thickness of the susceptor 1 is gradually increased from the periphery toward the center.

Please refer to Figure 1. Next, in step S300, a polishing portion is formed on one of the flat surfaces, wherein the polishing portion includes a bonding layer and a plurality of abrasive particles dispersedly disposed in the bonding layer, and the plurality of polishing particles respectively have a protruding bonding layer A plurality of cutting tips of a ground surface.

Referring to FIG. 2D, FIG. 2D is a cross-sectional view of the polishing pad conditioner of FIG. 1 in step S300 of FIG. As shown in FIG. 2D, in the present embodiment, the polishing portion 3 is formed on the outer side surface 2S of the buffer solder layer 2. In addition, the polishing portion 3 includes a bonding layer 30 and a plurality of abrasive particles 31 dispersedly disposed in the bonding layer 30. The aforementioned abrasive particles 31 are, for example, diamond or boron nitride.

Further, the bonding layer 30 and the buffer solder layer 2 are on the same side of the susceptor 1, and the bonding layer 30 is located on the flat surface (ie, the outer surface 2S) formed by the surface of the buffer solder layer 2. In addition, each of the abrasive particles 31 has a cutting tip 31t that protrudes from an abrasive surface 30S of the bonding layer 30.

In addition, the step of forming the polishing portion 3 on the composite base M1 may include: forming a bonding solder on one of the flat surfaces; providing a plurality of abrasive particles on the pedestal; and performing a brazing process to enable The solder is melted and solidified to form a polished portion. The heating brazing temperature at which the heat hardening treatment is performed does not exceed the heat curing temperature at which the heat curing treatment is performed.

In detail, the aforementioned bonding solder may be a solder paste, a solder paste or a mixture of a glue and a solder powder. In one embodiment, when the solder is bonded to the solder tab, the solder tab is fixed to the flat surface (ie, the outer surface 2S of the buffer material layer) by spot welding or a glue. It should be noted that, if the soldering piece is fixed on a flat surface by a rubber material, another piece of material, such as a graphite block, may be used to apply a pressing force to the soldering piece during the process of performing the heating brazing process. It can prevent the soldering piece from warping from the side or corner when it is heated and brazed.

Further, when the abrasive particles 31 are spread on the soldering piece, the plurality of abrasive particles 31 may be fixed by another adhesive material. The rubber material for fixing the plurality of abrasive particles 31 may be a double-sided tape or a glue layer formed on the soldering piece by spraying or coating.

In one embodiment, the thickness of the bonded solder is between 25 μm and 300 μm , which may be selected depending on the size of the abrasive particles 31. Further, the larger the size of the abrasive particles 31, the thicker the thickness of the bonded solder, but after the heat brazing treatment and the formation of the bonding layer 30, the bonding layer 30 does not cover the cutting tip 31t of the abrasive particles 31.

It should be noted that when the heat brazing treatment is performed, the heating brazing temperature is such that the bonding solder is melted, so that the plurality of abrasive particles 31 are fixed to the susceptor 1. However, it is necessary to control the heating brazing temperature at the time of the heating brazing treatment to prevent the buffer solder layer from being melted together when the bonding solder is melted. Therefore, in an embodiment, the heating brazing temperature at which the heat hardening treatment is performed may be lower than the heat curing temperature at which the heat curing treatment is performed.

Based on the above, in the embodiment of the present invention, the melting point of the bonding solder may be lower than the melting point of the buffer solder. Further, the liquidus temperature corresponding to the solder is less than the solidus temperature corresponding to the buffer solder. In addition, the difference between the solidus temperature corresponding to the buffer solder and the liquidus temperature corresponding to the solder is at least greater than 20 ° C, or the liquidus temperature corresponding to the buffer solder is higher than that corresponding to the solder. The liquidus temperature is at least 100 ° C, which makes it easier to melt the buffer solder layer 2 when performing the heat brazing treatment.

For example, when the material of the buffer solder layer 2 is AWS BNi5a (corresponding solidus temperature is 1052 ° C), the combined solder may also be an amorphous nickel-based solder, such as: AWS BNi2 (corresponding liquidus (liquidus) temperature is 1024 ° C) or BNi6 (corresponding liquidus temperature is 921 ° C).

In this embodiment, the selection of the buffer solder and the bonding of the solder is not limited in the present invention as long as the melting of the buffer solder layer 2 during the execution of the heat brazing treatment can be avoided. Therefore, the cutting tips 31t of the plurality of abrasive grains 31 formed on the susceptor 1 do not have an excessive height difference due to thermal deformation of the susceptor 1. That is, by the above manufacturing method, the cutting tips 31t of the plurality of abrasive particles 31 can substantially fall on the same horizontal plane.

As shown in FIG. 2D, the polishing pad conditioner of the embodiment of the present invention includes a susceptor 1, a buffer solder layer 2, and a polishing portion 3. In this embodiment, the top surface 1a' of the susceptor 1 is a curved surface, and the bottom surface 1b is a flat surface. The buffer solder layer 2 is provided on the curved surface. Further, in the present embodiment, the curved surface is an upper curved surface, and the thickness of the buffer solder layer 2 is such that the upper curved surface is gradually decreased from the periphery toward the center.

The polishing portion 3 is disposed on the susceptor 1, and the polishing portion 3 and the buffer solder layer 2 are both located on the same side of the susceptor 1. That is, the buffer solder layer 2 is located between the bonding layer 30 and the curved surface (top surface 1a').

The polishing portion 3 includes a bonding layer 30 and a plurality of abrasive particles 31 dispersedly disposed in the bonding layer 30. The plurality of abrasive particles 31 each have a plurality of cutting tips 31t that protrude from an abrasive surface 30S of the bonding layer 30.

If the cutting edge 31t having the highest position among the first three heights among the plurality of cutting tips 31t is formed, a plane is formed, and the plane is defined as a reference plane. In the polishing pad conditioner P1 formed by the manufacturing method of the present embodiment, the vertical height difference between the plurality of cutting tips 31t of the polishing portion 3 and the reference surface may not exceed 50 μm to conform to the semiconductor crystal having a line width of 45 nm or less. The need for round polishing.

In another embodiment, the planarization step can also be a one-sided planarization step. Please refer to FIG. 2E and FIG. 2F. In FIG. 2E, a single-sided flattening step is performed on the composite base M" along the dashed line depicted in FIG. 2E to form a flat surface on one side of the composite base M1.

Specifically, as shown in Fig. 2E and Fig. 2F, a part of the buffer solder layer 2' is removed when the single-sided flattening step is performed. Therefore, as shown in FIG. 2F, the outer side surface 2S of the buffer solder layer 2 is a flat surface, and the polishing portion 3 is formed on the flat surface (i.e., the outer side surface 2S) of the buffer solder layer 2.

Unlike the embodiment of Fig. 2B, in the present embodiment, the bottom surface 1b' of the susceptor 1' is still a curved surface. Usually, the bottom surface 1b' of the base 1' is provided with a plurality of screw holes as a locking surface. In this case, the flatness of the bottom surface 1b' is not required to be high, so that the flattening step can be performed only on one side of the composite base M".

3A to 3D are respectively schematic cross-sectional views of a polishing pad conditioner in each step of FIG. 1 according to another embodiment of the present invention. The same portions of the embodiment and the previous embodiment are not described again, and the same elements have the same reference numerals.

Referring to FIG. 3A, unlike the embodiment of FIG. 2A, in the present embodiment, the buffer solder 2" is formed on the bottom surface 1b" of the initial susceptor 1". Next, referring to FIG. 3B, heat curing treatment is performed. After the buffer solder 2" is melted and cooled and solidified, a composite base M2" having a buffer solder layer 2' and a susceptor 1' is formed. The susceptor 1' of the present embodiment is deformed by the initial susceptor 1" and is substantially arc-shaped. Form.

However, in the present embodiment, the top surface 1a' and the bottom surface 1b' of the susceptor 1' form a lower curved surface due to the difference in thermal expansion coefficient of the buffer solder 2" and the thermal expansion coefficient of the susceptor 1'. The buffer solder layer 2' has a curved outer side surface 2S and an arcuate inner side surface (not numbered) in conjunction with the deformation of the susceptor 1', wherein the curved inner side surface is coupled to the bottom surface 1b' of the pedestal 1'.

Referring to FIG. 3C, in the embodiment, the double-sided planarization step is also performed on the composite base M2" to form two flat surfaces respectively located on opposite sides of the composite base M2, and the outer surface 2S of the buffer solder layer is flat. Surface.

It should be noted that in the composite base M2 of the present embodiment, the bottom surface 1b' of the susceptor 1 in contact with the buffer solder layer 2 is still a curved surface, and in the present embodiment, the curved surface is a lower curved surface. Accordingly, the thickness of the buffer solder layer 2 matches the contour of the bottom surface 1b', and is gradually increased from the periphery of the buffer solder layer 2 toward the center. Further, after a part of the susceptor 1' is removed by the double-sided flattening step, the top surface 1a of the susceptor 1 is a flat surface, and the thickness of the susceptor 1 is gradually decreased from the periphery toward the center.

Next, referring to FIG. 3D, the polishing portion 3 is formed on the susceptor 1. In the present embodiment, the polishing portion 3 and the buffer solder layer 2 are located on opposite sides of the susceptor 1, respectively. The step of forming the polishing portion 3 is similar to that of the previous embodiment and will not be described herein.

In this embodiment, the bonding solder is a soldering piece or a rubber material containing solder powder. Since the susceptor 1 has been deformed in the step of FIG. 3B, and the buffer solder layer 2 can also suppress the deformation of the susceptor, even when the susceptor 1 is slightly deformed while performing the heating brazing process, the degree of deformation does not cause much The height difference between the plurality of cutting tips of the abrasive particles 31 is too large.

Please refer to Figures 3E and 3F. In another embodiment, the planarization step may be performed only on the surface of one side of the composite base M2" (e.g., the top surface 1a' of the susceptor 1' or the outer surface 2S' of the buffer solder layer 2').

In the embodiment of Fig. 3E, the flattening step is performed only on the top surface 1a' of the susceptor 1'. According to this, as shown in Fig. 3F, in the composite base M2', the top surface 1a of the susceptor 1 is a flat surface, and the polishing portion 3 is formed on the flat surface. In the present embodiment, the polishing portion 3 and the buffer solder layer 2' are located on opposite sides of the susceptor 1, respectively. In addition, in the present embodiment, the buffer solder layer 2' located on the bottom surface 1b' of the susceptor 1 can still restrict the deformation of the susceptor 1 when the heat hard soldering process is performed, thereby reducing the susceptor 1 during the heat brazing process. The degree of deformation.

In addition, referring to Figures 4A through 4C, there are shown cross-sectional views of the polishing pad conditioner of another embodiment of the present invention in the steps of Figure 1. In this embodiment, the composite base M3' further includes two layers of buffer solder layers 2' on opposite sides of the susceptor 1'.

In detail, in the step of providing the composite base, as shown in FIG. 4A, a buffer solder 2" is formed on each of the top surface 1a" and the bottom surface 1b" of the initial base 1", respectively. Next, as shown in FIG. 4B, a heat curing treatment is performed to melt and solidify the buffer solder 2", and then two layers of the buffer solder layer 2' on the opposite sides of the susceptor 1' are formed. It is worth noting that In the embodiment, the original initial base 1" is deformed, so that the top surface 1a' and the bottom surface 1b' of the deformed base 1' are convex.

Next, a planarization step is performed to cause the composite base M3 to have at least one flat surface. In the present embodiment, the double-sided flattening step is performed so that the outer side surfaces 2S of the two layers of the buffer solder layer 2 located on both sides of the susceptor 1' are flat surfaces.

In another embodiment, a one-sided planarization step may also be performed to planarize the outer side surface 2S' of the buffer solder layer 2' on one side of the susceptor 1'.

Subsequently, as shown in FIG. 4C, the polishing portion 30 is formed on the outer side surface 2S of one of the buffer solder layers 2. It should be noted that, when the heat brazing process is performed, the two layers of the buffer solder layer 2 in this embodiment can provide a force on both sides of the susceptor 1' to further suppress the deformation of the susceptor 1', thereby reducing the pedestal. 1' degree of deformation. According to this, it is possible to avoid the problem that the height difference between the cutting tips 31t of the plurality of abrasive particles 31 of the polishing portion 3 is excessively large due to thermal deformation of the susceptor 1'.

Please refer to FIG. 5A and FIG. 5B, wherein the steps of FIG. 5A and FIG. 5B are continued from FIG. 4A. That is, before the step of FIG. 5A is performed, the buffer solder 2" is formed on the opposite sides of the initial susceptor 1", as shown in FIG. 4A.

Different from the embodiment of FIG. 4B, after performing a heat curing process to melt and solidify the buffer solder 2", the original initial base 1" is deformed, so that the top surface 1a of the deformed base 1' is deformed. 'The bottom surface 1b' is a concave surface.

Further, in the present embodiment, a single-sided flattening step is performed on the composite base M4' so that a portion of the buffer solder layer 2' located on the top surface 1a' is removed. According to this, after performing the one-sided flattening step, in the composite base M4, the outer side surface 2S of the buffer solder layer 2 on the top surface 1a' is a flat surface, and the outer surface of the buffer solder layer 2' located on the bottom surface 1b' 2S' is a curved surface.

Subsequently, the polishing portion 3 is formed on the composite base M4. In the present embodiment, the polishing portion 3 is on the buffer solder layer 2 on the top surface 1a'. As described above, when the heat hard soldering process is performed, the two layers of the buffer solder layers 2, 2' in this embodiment can still provide a force on both sides of the susceptor 1' to further suppress the deformation of the susceptor 1'. Thereby, the problem that the height difference between the cutting tips 31t of the plurality of abrasive particles 31 of the polishing portion 3 is excessively large due to thermal deformation of the susceptor 1' can be avoided.

The beneficial effects of the present invention are that the polishing pad conditioners P1, P2, P1', P2', P3, P4 and the manufacturing method thereof provided by the technical solution of the present invention provide the buffer solder before the polishing portion 3 is formed. The composite bases M1", M2", M3', M4' of the layers 2, 2' and the susceptor 1', and the base 1' has been pre-deformed to have a curved surface during the curing of the buffer solder layers 2, 2', A flat surface on one side of the composite base M1, M1', M2, M2', M3, M4 is then formed by a planarization step.

When the polishing portion 3 is formed on the composite bases M1, M1', M2, M2', M3, M4, since the susceptors 1, 1' have been previously deformed, and the cured buffer solder layers 2, 2' can also be limited. The shape variable of the seat 1', so the shape variable of the base 1' during the heat brazing treatment is greatly reduced. Therefore, the height drop of the cutting tips 31r of the plurality of abrasive particles 31 of the polishing portion 3 is less affected by the thermal deformation of the susceptors 1, 1', and can meet the practical application requirements.

The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the drawings are included in the application of the present invention. Within the scope of the patent.

Claims (9)

 A polishing pad conditioner comprising: a composite base comprising a deformation base and a buffer solder layer formed on the deformation base, wherein at least one surface of the deformation base is a curved surface And the buffering solder layer covers the curved surface; and a polishing portion is disposed on the composite base, wherein the polishing portion includes a bonding layer and a plurality of abrasive particles dispersedly disposed in the bonding layer, wherein The plurality of abrasive particles respectively have a plurality of cutting tips protruding from an abrasive surface of the bonding layer; wherein the buffered solder layer corresponds to a heating solidus temperature greater than a heating liquid corresponding to the bonding layer Phase line temperature.    The polishing pad conditioner of claim 1, wherein the polishing portion is disposed on the curved surface, and the buffer solder layer is located between the bonding layer and the curved surface.    The polishing pad conditioner of claim 2, wherein the deformation base further comprises another curved surface, and the other of the curved surface and the polishing portion are respectively located on opposite sides of the deformation base.    The polishing pad conditioner of claim 1, further comprising another buffer solder layer, the buffer solder layer and the other of the buffer solder layers being respectively located on opposite sides of the deformation base.    The polishing pad conditioner of claim 1, wherein the curved surface is an upper curved surface or a lower curved surface, and a thickness of the buffering solder layer matches a contour of the curved surface, by a periphery of the buffer solder layer Increasing or decreasing towards the center.    The polishing pad conditioner of claim 1, wherein the buffer solder layer corresponds to a liquidus temperature higher than a liquidus temperature corresponding to the bonding layer by at least 100 °C.    The polishing pad conditioner of claim 1, wherein the polishing portion and the buffer solder layer are respectively located on opposite sides of the deformation base, and the curved surface is located at a bottom of the deformation base, and The surface of the buffer solder layer is a curved surface or a flat surface.    The polishing pad conditioner of claim 1, wherein the material of the deformation base is iron, molybdenum, tungsten, stainless steel, Invar or nickel-based superalloy.    The polishing pad conditioner of claim 1, wherein the buffer solder layer has a thickness of between 25 and 500 μm, and the bonding layer has a thickness of between 25 and 300 μm.