CN203380772U - Chemical mechanical polishing dresser - Google Patents
Chemical mechanical polishing dresser Download PDFInfo
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- CN203380772U CN203380772U CN201320207271.5U CN201320207271U CN203380772U CN 203380772 U CN203380772 U CN 203380772U CN 201320207271 U CN201320207271 U CN 201320207271U CN 203380772 U CN203380772 U CN 203380772U
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- abrasive grains
- layer
- cmp trimmer
- protruding tip
- cmp
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- 238000005498 polishing Methods 0.000 title abstract description 9
- 238000000227 grinding Methods 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000002245 particle Substances 0.000 claims abstract description 16
- 239000006061 abrasive grain Substances 0.000 claims description 209
- 239000010410 layer Substances 0.000 claims description 199
- 239000011230 binding agent Substances 0.000 claims description 72
- 229910000679 solder Inorganic materials 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 238000009826 distribution Methods 0.000 claims description 11
- 239000003082 abrasive agent Substances 0.000 claims description 10
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- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 239000011241 protective layer Substances 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011888 foil Substances 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
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- 239000010974 bronze Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
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- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- KCGHDPMYVVPKGJ-UHFFFAOYSA-N [Ti].[Cu].[Sn] Chemical compound [Ti].[Cu].[Sn] KCGHDPMYVVPKGJ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The utility model relates to a chemical mechanical polishing trimmer, include: a substrate; a bonding layer disposed on the substrate; and a polishing layer having a metal foil and a first layer of polishing particles disposed over the metal foil, the polishing layer being coupled to the substrate by the bonding layer; wherein the first abrasive particle layer comprises a plurality of abrasive particles, wherein the protruding tips of the abrasive particles have a flat surface, such that the abrasive particles do not have one or more particularly pronounced protruding tips, and the abrasive particles have a patterned arrangement. Therefore, the utility model discloses with the planarization surface design of accessible chemical mechanical polishing trimmer to reduce the scratch rate of being ground the work piece, and then make chemical mechanical polishing trimmer have more excellent grinding efficiency and working life.
Description
Technical field
The utility model relates to a kind of cmp trimmer, espespecially a kind of by having the cmp trimmer of planarized surface.
Background technology
Cmp (Chemical Mechanical Polishing, CMP) is to be grinding technics common in various industries.Utilize chemical grinding technique can grind the surface of various article, comprise the plane of integrated circuit (integrated circuit), pottery, silicon, glass, quartz or metal etc.In addition, along with the integrated circuit development is rapid, because cmp can reach the purpose of large tracts of land planarization, therefore be one of wafer planarization technology common in semiconductor technology.Especially, along with transistorized volume-diminished, the processing number of times of cmp also increases thereupon, and for example, in the technique of 28 nano-scale linewidths, the processing number of times of cmp may be up to 30 times.
Hundred million dollars of manufactures of semi-conductor industry annual cost more than ten at present must have the Silicon Wafer of very smooth and smooth surface.Existing many technology are in order to manufacture Silicon Wafer smooth and the tool flat surfaces.Wherein modal technique is called cmp (CMP), and it comprises the use of a grinding pad in conjunction with lapping liquid.In all CMP technique, the most important thing is the uniformity in grinding crystal wafer, IC circuit slickness, productive rate remove the aspects such as speed, CMP running stores life-span, make cmp can realize the degree of peak performance.
In semi-conductive chemical mechanical planarization process, to utilize grinding pad (Pad) to contact wafer (or other semiconductor element), and optionally lapping liquid is used in collocation, make grinding pad by chemical reaction and physical mechanical profit impurity or the uneven structure to remove crystal column surface; After grinding pad is used certain hour, the lapping rejects produced due to process of lapping stagnates and causes grinding effect and Efficiency Decreasing in the surface of grinding pad, therefore, can utilize trimmer (conditioner) to repair grinding pad surface mill, the surface that makes grinding pad is roughening once again, and maintains best grinding state.Yet; in the manufacturing process of trimmer; the grinding layer that abrasive grains and binder course need to be mixed to form is arranged at substrate surface; and make the grinding layer secure bond in substrate surface via sclerosis modes such as hard solder or sintering; only, in the hardening process of grinding layer, due to the thermal expansion coefficient difference between grinding layer and substrate, often can be accompanied by the problem that substrate surface deforms; therefore destroy the flatness on trimmer surface, and then affect grinding efficiency and the service life of trimmer.
In known technology, No. 100133909th, the TaiWan, China patent application case of having applied for as the creator is to comprise: one first individual layer superabrasive grain is a side that arranges and be coupled in a metal supporting layer; And one second the individual layer superabrasive grain be a relative side that arranges and be coupled in this first individual layer of this metal supporting layer.This second individual layer superabrasive grain is that position is in the position that has the essence same distribution with this first individual layer superabrasive grain.Therefore, can be by the arrangement of superabrasive grain in case before this, be distributed with on the both sides of this metal supporting layer and equate or equal in fact metamorphosis power, active force can be removed the deformation extent produced in the metal supporting layer each other effectively according to this, therefore can reduce the superabrasive grain change of relative altitude each other.
In addition, No. 101118288th, the TaiWan, China patent application case of having applied for as the creator, be to comprise: a hypothallus; And an individual layer superabrasive grain, be the superabrasive grain for a plurality of these hypothalluses of embedding, wherein each superabrasive grain is to protrude from this hypothallus.The highest protruding tip of this individual layer superabrasive grain is less than or equal to approximately 20 microns with the outstanding distance difference of time high protruding tip, and the outstanding distance difference between the highest 1% protruding tip of individual layer superabrasive grain is to be approximately 80 microns or less.Chemical and mechanical grinding cushion trimmer in case before this is included on the whole chemical and mechanical grinding cushion trimmer working surface completed, and has the superabrasive grain layer at planarization tip in fact.This has the chemical and mechanical grinding cushion trimmer of the most advanced and sophisticated configuration of planarization in fact, and it has outstanding distribution the uniformly compared to traditional trimmer, therefore superabrasive grain is difficult for therefrom being pulled out from matrix, its scratch rate is also lower.In addition, the outstanding distribution uniformly of trimmer repaired to promote good polishing speed to chemical and mechanical grinding cushion to be provided at this mode, and extended the working life of trimmer simultaneously.For example, the spacing of the even roughness on chemical and mechanical grinding cushion and size distribution will affect these superiority.
Case before above-mentioned mentioned cmp trimmer, the creator utilizes the distributing position of abrasive grains, to eliminate the distortion produced in the manufacturing process of cmp trimmer, or further control the outstanding distance of the protruding tip of abrasive grains, make the cmp trimmer form a planarized surface, and reduce and to be polished the scratch rate of workpiece in chemical mechanical planarization process, and then make the cmp trimmer there is more excellent grinding efficiency and working life.
Accordingly, develop a kind of cmp trimmer with a planarization lapped face, it can improve the restriction of general cmp trimmer due to production method, and avoids the outstanding distance of protruding tip of abrasive grains inconsistent and destroy the surface flatness of cmp trimmer.
The utility model content
Main purpose of the present utility model is that a kind of cmp trimmer is being provided, it can be by the planarized surface design of cmp trimmer, be polished the scratch rate of workpiece with minimizing, and then make the cmp trimmer there is more excellent grinding efficiency and working life.
For reaching above-mentioned purpose, the utility model is to provide a kind of cmp trimmer, comprising:
One substrate;
One binder course, be arranged on this substrate; And
One grinding layer, this grinding layer has a sheet metal and one first abrasive grains layer, this first abrasive grains layer is arranged at this sheet metal top, and this grinding layer by this binder course to be coupled on this substrate;
Wherein, this first abrasive grains layer contains a plurality of abrasive grains, and the protruding tip of described abrasive grains has a flat surfaces, make described abrasive grains not have one or more significant especially protruding tips, and described abrasive grains has a patterned arrangement.
Also comprise one second abrasive grains layer, this second abrasive grains layer is arranged at this sheet metal below, and this second abrasive grains layer is located between this sheet metal and this binder course.
Wherein, the described abrasive grains of this first abrasive grains layer has monolayer alignment.
Wherein, this second abrasive grains layer has identical abrasive grains kenel and distribution with this first abrasive grains layer.
Wherein, described abrasive grains by an abrasive material binder course to be coupled to this sheet metal.
Wherein, the highest protruding tip of this first abrasive grains layer and the 2nd the most outstanding distance difference of high protruding tip be less than or equal to 20 microns.
Wherein, the highest protruding tip of this first abrasive grains layer and the 2nd the most outstanding distance difference of high protruding tip be less than or equal to 10 microns.
Wherein, the highest protruding tip of this first abrasive grains layer and the 10th the most outstanding distance difference of high protruding tip be less than or equal to 20 microns.
Wherein, the highest protruding tip of this first abrasive grains layer and the 100th the most outstanding distance difference of high protruding tip be less than or equal to 40 microns.
Wherein, the outstanding distance difference between the highest 1% protruding tip of this first abrasive grains layer is less than or equal to 80 microns.
Wherein, this flat surfaces by a hypothesis plane as datum level, the protruding tip that makes described abrasive grains compared to this hypothesis plane to form a flat surfaces.
Wherein, the protruding tip that this planarized surface utilizes FRT to measure the discontinuous many abrasive grains of reckoning forms.
Wherein, the protruding tip of described abrasive grains be 1,000 to more than 30,000.
Wherein, the protruding tip of described abrasive grains is 1,000.
Wherein, the cmp trimmer after using, under the amplification of 50 multiplying powers, it has 300 or above described abrasive grains generation wearing and tearing.
Wherein, this arranged in patterns is array pattern, circular rings pattern, circular concentric ring patterns or helical ring pattern.
Wherein, directionality is the described abrasive grains with certain party tropism, and described abrasive grains is an abrading tip face, a plane lapping face, mound line abradant surface or its combination.
Wherein, described abrasive grains is diamond, natural diamond, polycrystalline diamond, cubic boron nitride or polycrystal cubic boron nitride.
Wherein, the particle diameter of described abrasive grains is between 100 microns to 600 microns.
Wherein, this binder course maybe this grinding binder course be a solder layer, an electrodeposited coating, a sinter layer or a resin bed.
Wherein, this binder course maybe this grinding binder course be a solder layer.
Wherein, the free copper of at least one choosing of this solder layer, iron, tin, nickel, cobalt, nickel, chromium, manganese, silicon, aluminium, titanium, boron, phosphorus and the group that forms thereof.
Wherein, this substrate is a stainless steel substrate.
Also comprise a protective layer, this protective layer is arranged at this grinding layer surface.
Wherein, this protective layer is a nickel metal layer, a palladium metal layer, a DLC carbon-coating or a diamond film layer.
The beneficial effects of the utility model are, it can pass through the outstanding distance of the protruding tip of control abrasive grains, make the cmp trimmer there is a planarized surface, therefore, reduce and be polished the scratch rate of workpiece, and then make the cmp trimmer there is more excellent grinding efficiency and working life.
The accompanying drawing explanation
For reaching above-mentioned purpose and effect, the technological means that the utility model adopts and structure thereof, be described as follows in detail below in conjunction with accompanying drawing and preferred embodiment, wherein:
Figure 1A to 1D is the making flow chart of known cmp trimmer.
Fig. 2 A to 2D is the making flow chart of the cmp trimmer of the utility model embodiment 1.
Fig. 3 A to 3D is the making flow chart of the cmp trimmer of the utility model embodiment 2.
Fig. 4 A and 4B are the cmp trimmer schematic diagrames of the utility model embodiment 3.
Fig. 5 A and 5B are the cmp trimmer schematic diagrames of the utility model embodiment 4.
Fig. 6 is the cmp trimmer schematic diagram of the utility model embodiment 5.
Fig. 7 is the cmp trimmer schematic diagram of the utility model embodiment 6.
Fig. 8 is the cmp trimmer schematic diagram of the utility model embodiment 7.
The specific embodiment
Be below, by specific embodiment preferably, embodiment of the present utility model is described, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by content disclosed in the present specification.The utility model also can be different by other instantiation implemented or applied, the every details in this specification also can, based on different viewpoints and application, be carried out various modifications and change under not departing from spirit of the present utility model.
Comparative example 1
Please refer to Figure 1A to Fig. 1 D, it is the making flow chart for a known cmp trimmer.At first, as shown in Figure 1A and Figure 1B, form a binder course 11 on the working face of a substrate 10, wherein, binder course 11 is to be general nickel based metal scolder commonly used, and substrate 10 is stainless steel.Then, as shown in Figure 1 C, abrasive grains 12 is arranged on binder course 11, wherein, abrasive grains 12 can pass through a template (figure does not show) and control its spacing and arrangement mode, also can utilize a steel hard dull and stereotyped (figure does not show) to push abrasive grains 12 downwards, make abrasive grains 12 be placed in the binder course surface simultaneously.Finally, as shown in Fig. 1 D, by a heat hardening process, make abrasive grains 12 be fixed in substrate 10 by this grinding layer 11, yet, due to binder course 11 (for example, the thermal coefficient of expansion of brazing metal is about 14-15ppm/ ℃) and substrate 10 is (for example, stainless thermal coefficient of expansion is about 16ppm/ ℃) thermal coefficient of expansion between difference, will make will deform in the cooling procedure after sclerosis of cmp trimmer, and cause the binder course 11 on substrate 10 surfaces and abrasive grains 12 also to be out of shape thereupon, in Fig. 1 D, binder course 11 and abrasive grains 12 in chemical machinery trimmer center have higher height compared to outer zone, and form the textured surface of central authorities higher than the outside, therefore, destroy the flatness on trimmer surface, and then cause and be polished workpiece and be easy to the scratch rate and increase, and then make grinding efficiency and the working life variation of cmp trimmer.
Embodiment 1
Main purpose of the present utility model is the outstanding distance of the protruding tip by controlling abrasive grains, make the cmp trimmer there is a planarized surface, therefore, reduce and be polished the scratch rate of workpiece, and then make the cmp trimmer there is more excellent grinding efficiency and working life.Fig. 2 A to 2D is the making flow chart of the cmp trimmer of the utility model embodiment 1.Please refer to 2A, at first, one grinding layer 22 is provided, this grinding layer 22 has the first abrasive grains layer 221a, sheet metal 222 and the second abrasive grains layer 221b, wherein, the first abrasive grains layer 221a is positioned at sheet metal 222 tops, the second abrasive grains 221b is positioned at sheet metal 222 belows, sheet metal 222 is located between the first abrasive grains layer 221a and the second abrasive grains layer 221b, the first abrasive grains layer 221a of grinding layer 22 contains a plurality of abrasive grains, and the protruding tip of described abrasive grains can be considered a flat surfaces, and described abrasive grains has the patterned arrangement of an array pattern, and described abrasive grains is point upward to form the directionality of an abrading tip face, in addition, the distribution that the described abrasive grains of this first abrasive grains layer 221a is monolayer alignment, and this second abrasive grains layer 221b has identical abrasive grains kenel and distribution with this first abrasive grains layer 221a, in addition, in this embodiment 1, the diamond that the abrasive grains of the first abrasive grains layer 221a and the second abrasive grains layer 221b is 500 microns of particle diameters, sheet metal 222 makes grinding layer 22 easily fit in substrate the fixing soft thin slice of abrasive grains for selecting, for example, the copper sheet metal, plastic tab, or solder alloy thin slice.
Then, as shown in Fig. 2 B, the mode by the abrasive grains of the first abrasive grains layer 221a and the second abrasive grains layer 221b by heating and pressurization, make described abrasive grains lay fixed in the both sides of this sheet metal 222.Finally, as Fig. 2 C and Fig. 2 D, the substrate 20 of one Stainless Steel material and the binder course 21 of a bronze medal tin titanium alloy scolder are provided, and this binder course 21 is positioned at this substrate 20 tops, then, then this grinding layer 22 is arranged to this binder course 21 tops, and is heated hard solder, make this grinding layer 22 by this binder course 21 in conjunction with being fixed on this substrate 20, there is the cmp trimmer of planarized surface with formation.In addition; in aforementioned cmp trimmer; the protective layer (figure does not show) that more can comprise a nickel metal layer or a DLC carbon-coating; this protective layer can be arranged at grinding layer 22 surfaces, and by this protective layer to provide the cmp trimmer to there is better corrosion resistance and service life.
Accordingly, in the cmp trimmer of the utility model embodiment 1, comprising: a substrate 20; One binder course 21, be arranged on this substrate 20; An and grinding layer 22, this grinding layer 22 is to have a sheet metal 222 and one first abrasive grains layer 221a, this the first abrasive grains layer 221a is arranged at this sheet metal 222 tops, and this grinding layer 22 by this binder course 21 to be coupled on this substrate 20, wherein, this the first abrasive grains layer 221a contains a plurality of abrasive grains, the protruding tip of described abrasive grains is to have a flat surfaces, make described abrasive grains not there are one or more significant especially protruding tips, and described abrasive grains have a patterned arrangement; In addition, the cmp trimmer of previous embodiment 1, also comprise one second abrasive grains layer 221b, this the second abrasive grains layer 221b is arranged at this sheet metal 222 belows, and this second abrasive grains layer 221b is located between this sheet metal 222 and this binder course 21, in addition, the described abrasive grains of this first abrasive grains layer 221a has monolayer alignment, and this second abrasive grains layer 221b has identical abrasive grains kenel and distribution with this first abrasive grains layer 221a.
In addition, in aforementioned cmp trimmer, can utilize FRT to measure on trimmer the highest by 1, the protruding tip of 000 abrasive grains, the recycling least squares method is extrapolated a hypothesis plane consisted of described protruding tip wedge angle, and the flat surfaces as protruding tip defines by the height tolerance of abrasive grains and imaginary plane.In this embodiment 1, the protruding tip of described abrasive grains is to have a flat surfaces, wherein, the highest protruding tip of this first abrasive grains layer and the 2nd the most outstanding distance difference of high protruding tip are less than 20 microns, the highest protruding tip of this first abrasive grains layer and the 10th the most outstanding distance difference of high protruding tip are less than 20 microns, the highest protruding tip of this first abrasive grains layer and the 100th the most outstanding distance difference of high protruding tip are less than 40 microns, outstanding distance difference between the highest 1% protruding tip of this first abrasive grains layer is less than 80 microns.
In aforementioned content, the disclosed cmp trimmer of comparative example 1 is to be current known production method, it is first to be arranged on substrate by abrasive grains and binder course, and heated, make abrasive grains react to be fixed on substrate by the hard solder of binder course, yet, due to the difference between the thermal coefficient of expansion of binder course and substrate, will make will deform in the cooling procedure after sclerosis of cmp trimmer, and cause the binder course of substrate surface and abrasive grains also to be out of shape thereupon, therefore binder course and abrasive grains in chemical machinery trimmer center have higher height compared to outer zone, and form the textured surface of central authorities higher than the outside, therefore, destroy the flatness on trimmer surface, and then cause and be polished workpiece and be easy to the scratch rate and increase, and then make grinding efficiency and the working life variation of cmp trimmer.Be different from the production method of the whole device of known cmp and form structure, in embodiment 1 of the present utility model, because abrasive grains combination in advance is fixed in sheet metal to form a grinding layer, again this grinding layer is arranged on substrate and binder course, and heated, make grinding layer react to be fixed on substrate by the hard solder of binder course, therefore, cmp trimmer of the present utility model can be avoided the distortion and the displacement problem that easily cause in the cooling procedure of abrasive grains after sclerosis or sclerosis of known technology, on the other hand, cmp trimmer of the present utility model more can pass through the outstanding distance of the protruding tip of the described abrasive grains of control, make the cmp trimmer there is a planarized surface, perhaps, cmp trimmer of the present utility model also can be arranged at respectively by the abrasive grains that will have identical kenel and distribution the both sides of sheet metal simultaneously, make described abrasive grains form identical metamorphosis power in both sides of foil, and then the deformation extent caused can effectively offset cooling after hard solder of grinding layer the time.
Embodiment 2
Fig. 3 A to 3D is the making flow chart of the cmp trimmer of the utility model embodiment 2, and the grinding layer that is different from previous embodiment 1 is that both sides all have the abrasive grains layer, at the grinding layer of embodiment 2, is the one-sided abrasive grains layer that has.Please refer to 3A, at first, one grinding layer 32 is provided, this grinding layer 32 has the first abrasive grains layer 321 and sheet metal 322, wherein, the first abrasive grains layer 321 is positioned at sheet metal 322 tops, the first abrasive grains layer 321 of grinding layer 32 contains a plurality of abrasive grains, and the protruding tip of described abrasive grains can be considered a flat surfaces, and described abrasive grains has the patterned arrangement of an array pattern, and described abrasive grains is point upward to form the directionality of an abrading tip face, in addition, the distribution that the described abrasive grains of this first abrasive grains layer 321 is monolayer alignment, the diamond that the abrasive grains of this first abrasive grains layer 321 is 500 microns of particle diameters, sheet metal 322 easily makes grinding layer 32 fit in substrate and the fixing soft thin slice of abrasive grains for selecting, for example, the copper sheet metal, plastic tab, or solder alloy thin slice.
Then, as shown in Figure 3 B, the mode by the abrasive grains of the first abrasive grains layer 321 by heating and pressurization, make described abrasive grains lay fixed in a side of this sheet metal 322.Finally, as Fig. 3 C and Fig. 3 D, the substrate 30 of one Stainless Steel material and the binder course 31 of a nickel based metal scolder are provided, and this binder course 31 is positioned at this substrate 30 tops, then, then this grinding layer 32 is arranged to this binder course 31 tops, and is heated hard solder, make this grinding layer 32 by this binder course 31 in conjunction with being fixed on this substrate 30, there is the cmp trimmer of planarized surface with formation.
Accordingly, in the cmp trimmer of the utility model embodiment 2, comprising: a substrate 30, one binder course 31, be arranged on this substrate 30, an and grinding layer 32, this grinding layer 32 is to have a sheet metal 322 and one first abrasive grains layer 321, this the first abrasive grains layer 321 is to be arranged at this sheet metal 322 tops, and this grinding layer 32 by this binder course 31 to be coupled on this substrate 30, wherein, this the first abrasive grains layer 321 contains a plurality of abrasive grains, the protruding tip of described abrasive grains is to have a flat surfaces, make described abrasive grains not there are one or more significant especially protruding tips, and described abrasive grains has a patterned arrangement, the described abrasive grains of this first abrasive grains layer 321 has monolayer alignment.
In addition, in aforementioned cmp trimmer, the protruding tip of described abrasive grains is to have a flat surfaces, wherein, the highest protruding tip of this first abrasive grains layer and the 2nd the most outstanding distance difference of high protruding tip are less than 20 microns, the highest protruding tip of this first abrasive grains layer and the 10th the most outstanding distance difference of high protruding tip are less than 20 microns, the highest protruding tip of this first abrasive grains layer and the 100th the most outstanding distance difference of high protruding tip are less than 40 microns, outstanding distance difference between the highest 1% protruding tip of this first abrasive grains layer is less than 80 microns.
Be different from the production method of the whole device of known cmp and form structure, in embodiment 2 of the present utility model, because abrasive grains combination in advance is fixed in sheet metal to form a grinding layer, again this grinding layer is arranged on substrate and binder course, and heated, make grinding layer react to be fixed on substrate by the hard solder of binder course, therefore, cmp trimmer of the present utility model can be avoided the distortion and the displacement problem that easily cause in the cooling procedure of abrasive grains after sclerosis or sclerosis of known technology, on the other hand, cmp trimmer of the present utility model more can pass through the outstanding distance of the protruding tip of the described abrasive grains of control, make the cmp trimmer there is a planarized surface, therefore, reduce the scratch rate that is polished workpiece, and then make the cmp trimmer there is more excellent grinding efficiency and working life.
Embodiment 3
As Fig. 4 A and 4B are the cmp trimmer schematic diagrames of the utility model embodiment 3.Embodiment 3 is roughly the same with the described cmp trimmer of previous embodiment 1, its difference is, the grinding layer of embodiment 1 is abrasive grains directly to be laid fixed in to the both sides of sheet metal, and the grinding layer of embodiment 3 be by abrasive grains by the abrasive material binder course to be fixed in the both sides of sheet metal.Please refer to Fig. 4 A, one grinding layer 42 is provided, this grinding layer 42 has the first abrasive grains layer 421a, sheet metal 422, abrasive material binder course 423 and the second abrasive grains layer 421b, wherein, the first abrasive grains layer 421a is positioned at sheet metal 422 tops, the second abrasive grains 421b is positioned at sheet metal 422 belows, sheet metal 422 is located between the first abrasive grains layer 421a and the second abrasive grains layer 421b, and the abrasive material binder course 423 that the first abrasive grains layer 421a and the second abrasive grains layer 421b can form by copper tin titanium alloy scolder is fixed in the both sides of sheet metal 422 with hard solder.Then, as shown in Figure 4 B, the substrate 40 of one Stainless Steel material and the binder course 41 of a bronze medal tin titanium alloy scolder are provided, and this binder course 41 is positioned at this substrate 40 tops, then, then this grinding layer 42 is arranged to this binder course 41 tops, and is heated hard solder, make this grinding layer 42 by this binder course 41 in conjunction with being fixed on this substrate 40, there is the cmp trimmer of planarized surface with formation.
Embodiment 4
As Fig. 5 A and 5B are the cmp trimmer schematic diagrames of the utility model embodiment 4.Embodiment 4 is roughly the same with the described cmp trimmer of previous embodiment 2, its difference is, the grinding layer of embodiment 2 is that abrasive grains is directly laid fixed in to the one-sided of sheet metal, and the grinding layer of embodiment 4 be by abrasive grains by the abrasive material binder course to be fixed in the one-sided of sheet metal.Please refer to Fig. 5 A, one grinding layer 52 is provided, this grinding layer 52 has the first abrasive grains layer 521, sheet metal 522 and abrasive material binder course 523, wherein, the first abrasive grains layer 521 is positioned at sheet metal 522 tops, and the abrasive material binder course 523 that the first abrasive grains layer 521 can form by the nickel based metal scolder is fixed in a side of sheet metal 522 with hard solder.Then, as shown in Figure 5 B, the substrate 50 of one Stainless Steel material and the binder course 51 of a nickel based metal scolder are provided, and this binder course 51 is positioned at this substrate 50 tops, then, then this grinding layer 52 is arranged to this binder course 51 tops, and is heated hard solder, make this grinding layer 52 by this binder course 51 in conjunction with being fixed on this substrate 50, there is the cmp trimmer of planarized surface with formation.
Embodiment 5
As Fig. 6 is the cmp trimmer schematic diagram of the utility model embodiment 5.Embodiment 5 is roughly the same with the described cmp trimmer of previous embodiment 1, its difference is, the grinding layer particle of embodiment 1 is point upward to form the directionality of an abrading tip face, and the grinding layer particle of embodiment 5 is plane upwards to form the directionality of a plane lapping face.Please refer to Fig. 6, one grinding layer 62 is provided, this grinding layer 62 has the first abrasive grains layer 621a, sheet metal 622 and the second abrasive grains layer 621b, wherein, the first abrasive grains layer 621a is positioned at sheet metal 622 tops, the second abrasive grains 621b is positioned at sheet metal 622 belows, sheet metal 622 is located between the first abrasive grains layer 621a and the second abrasive grains layer 621b, mode by the abrasive grains of the first abrasive grains layer 621a and the second abrasive grains layer 621b by heating and pressurization, make described abrasive grains lay fixed in the both sides of this sheet metal 622, wherein, described abrasive grains is point upward to form the directionality of an abrading tip face.Then, the substrate 60 of one Stainless Steel material and the binder course 61 of a bronze medal tin titanium alloy scolder are provided, and this binder course 61 is positioned at this substrate 60 tops, finally, again this grinding layer 62 is arranged to this binder course 61 tops, and heated hard solder, make this grinding layer 62 by this binder course 61 in conjunction with being fixed on this substrate 60, there is the cmp trimmer of planarized surface with formation.
Embodiment 6
As Fig. 7 is the cmp trimmer schematic diagram of the utility model embodiment 6.Embodiment 6 is roughly the same with the described cmp trimmer of previous embodiment 1, its difference is, the grinding layer particle of embodiment 1 is point upward to form the directionality of an abrading tip face, and the grinding layer particle of embodiment 6 is inclined-plane upwards to form the directionality of a mound line abradant surface.Please refer to Fig. 7, one grinding layer 72 is provided, this grinding layer 72 has the first abrasive grains layer 721a, sheet metal 722 and the second abrasive grains layer 721b, wherein, the first abrasive grains layer 721a is positioned at sheet metal 722 tops, the second abrasive grains 721b is positioned at sheet metal 722 belows, sheet metal 722 is located between the first abrasive grains layer 721a and the second abrasive grains layer 721b, mode by the abrasive grains of the first abrasive grains layer 721a and the second abrasive grains layer 721b by heating and pressurization, make described abrasive grains lay fixed in the both sides of this sheet metal 722, wherein, described abrasive grains is inclined-plane upwards to form the directionality of a mound line abradant surface.Then, the substrate 70 of one Stainless Steel material and the binder course 71 of a bronze medal tin titanium alloy scolder are provided, and this binder course 71 is positioned at this substrate 70 tops, finally, again this grinding layer 72 is arranged to this binder course 71 tops, and heated hard solder, make this grinding layer 72 by this binder course 71 in conjunction with being fixed on this substrate 70, there is the cmp trimmer of planarized surface with formation.
Embodiment 7
As Fig. 8 is the cmp trimmer schematic diagram of the utility model embodiment 7.Embodiment 7 is roughly the same with the described cmp trimmer of previous embodiment 1, its difference is, the grinding layer particle of embodiment 1 is point upward to form the directionality of an abrading tip face, and the grinding layer particle of embodiment 7 is the directionality that part point upward and part plane make progress and have abrading tip face and plane lapping face to form simultaneously.Please refer to Fig. 8, one grinding layer 82 is provided, this grinding layer 82 has the first abrasive grains layer 821a, sheet metal 822 and the second abrasive grains layer 821b, wherein, the first abrasive grains layer 821a is positioned at sheet metal 822 tops, the second abrasive grains 821b is positioned at sheet metal 822 belows, sheet metal 822 is located between the first abrasive grains layer 821a and the second abrasive grains layer 821b, mode by the abrasive grains of the first abrasive grains layer 821a and the second abrasive grains layer 821b by heating and pressurization, make described abrasive grains lay fixed in the both sides of this sheet metal 822, wherein, described abrasive grains in centre is that point upward is to form the directionality of an abrading tip face, and the described abrasive grains at the place, periphery is that plane is upwards to form the directionality of a plane lapping face.Then, the substrate 80 of one Stainless Steel material and the binder course 81 of a bronze medal tin titanium alloy scolder are provided, and this binder course 81 is positioned at this substrate 80 tops, finally, again this grinding layer 82 is arranged to this binder course 81 tops, and heated hard solder, make this grinding layer 82 by this binder course 81 in conjunction with being fixed on this substrate 80, there is the cmp trimmer of planarized surface with formation.
Above-described embodiment is only to give an example for convenience of description, and the interest field that the utility model is advocated should be as the criterion so that the claim scope is described certainly, but not only limits to above-described embodiment.
Claims (22)
1. a cmp trimmer, is characterized in that, comprising:
One substrate;
One binder course, be arranged on this substrate; And
One grinding layer, this grinding layer has a sheet metal and one first abrasive grains layer, this first abrasive grains layer is arranged at this sheet metal top, and this grinding layer by this binder course to be coupled on this substrate;
Wherein, this first abrasive grains layer contains a plurality of abrasive grains, and the protruding tip of described abrasive grains has a flat surfaces, make described abrasive grains not have one or more significant especially protruding tips, and described abrasive grains has a patterned arrangement.
2. cmp trimmer according to claim 1, it is characterized in that, also comprise one second abrasive grains layer, this second abrasive grains layer is arranged at this sheet metal below, and this second abrasive grains layer is located between this sheet metal and this binder course.
3. cmp trimmer according to claim 1, is characterized in that, wherein, the described abrasive grains of this first abrasive grains layer has monolayer alignment.
4. cmp trimmer according to claim 1 and 2, is characterized in that, wherein, this second abrasive grains layer has identical abrasive grains kenel and distribution with this first abrasive grains layer.
5. cmp trimmer according to claim 1, is characterized in that, wherein, described abrasive grains by an abrasive material binder course to be coupled to this sheet metal.
6. cmp trimmer according to claim 1, is characterized in that, wherein, the highest protruding tip of this first abrasive grains layer and the 2nd the most outstanding distance difference of high protruding tip are less than or equal to 20 microns.
7. cmp trimmer according to claim 6, is characterized in that, wherein, the highest protruding tip of this first abrasive grains layer and the 2nd the most outstanding distance difference of high protruding tip are less than or equal to 10 microns.
8. cmp trimmer according to claim 1, is characterized in that, wherein, the highest protruding tip of this first abrasive grains layer and the 10th the most outstanding distance difference of high protruding tip are less than or equal to 20 microns.
9. cmp trimmer according to claim 1, is characterized in that, wherein, the highest protruding tip of this first abrasive grains layer and the 100th the most outstanding distance difference of high protruding tip are less than or equal to 40 microns.
10. cmp trimmer according to claim 1, is characterized in that, wherein, the outstanding distance difference between the highest 1% protruding tip of this first abrasive grains layer is less than or equal to 80 microns.
11. cmp trimmer according to claim 1, is characterized in that, wherein, this flat surfaces by a hypothesis plane as datum level, the protruding tip that makes described abrasive grains compared to this hypothesis plane to form a flat surfaces.
12. cmp trimmer according to claim 11, is characterized in that, wherein, the protruding tip that this planarized surface utilizes FRT to measure the discontinuous many abrasive grains of reckoning forms.
13. cmp trimmer according to claim 12, is characterized in that, wherein, the protruding tip of described abrasive grains be 1,000 to more than 30,000.
14. cmp trimmer according to claim 13, is characterized in that, wherein, the protruding tip of described abrasive grains is 1,000.
15. cmp trimmer according to claim 1, is characterized in that, wherein, the cmp trimmer after using, under the amplification of 50 multiplying powers, it has 300 or above described abrasive grains generation wearing and tearing.
16. cmp trimmer according to claim 1, is characterized in that, wherein, described abrasive grains is diamond, natural diamond, polycrystalline diamond, cubic boron nitride or polycrystal cubic boron nitride.
17. cmp trimmer according to claim 1, is characterized in that, wherein, the particle diameter of described abrasive grains is between 100 microns to 600 microns.
18. the cmp trimmer, is characterized in that according to claim 1 or 5, wherein, this binder course or this abrasive material binder course are a solder layer, an electrodeposited coating, a sinter layer or a resin bed.
19. cmp trimmer according to claim 18, is characterized in that, wherein, this binder course or this abrasive material binder course are a solder layer.
20. cmp trimmer according to claim 1, is characterized in that, wherein, this substrate is a stainless steel substrate.
21. cmp trimmer according to claim 1, is characterized in that, also comprises a protective layer, this protective layer is arranged at this grinding layer surface.
22. cmp trimmer according to claim 21, is characterized in that, wherein, this protective layer is a nickel metal layer, a palladium metal layer, a DLC carbon-coating or a diamond film layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102206277U TWM465659U (en) | 2013-04-08 | 2013-04-08 | Chemical mechanical polishing conditioner |
| TW102206277 | 2013-04-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203380772U true CN203380772U (en) | 2014-01-08 |
Family
ID=49869298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320207271.5U Expired - Lifetime CN203380772U (en) | 2013-04-08 | 2013-04-23 | Chemical mechanical polishing dresser |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20140308883A1 (en) |
| CN (1) | CN203380772U (en) |
| TW (1) | TWM465659U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104084884A (en) * | 2014-07-03 | 2014-10-08 | 南京三超金刚石工具有限公司 | CMP flake grinding trimmer and production method thereof |
| CN106625248A (en) * | 2017-01-26 | 2017-05-10 | 北京清烯科技有限公司 | High-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals |
| CN106826601A (en) * | 2017-01-26 | 2017-06-13 | 北京清烯科技有限公司 | The method of CMP pad dresser of the manufacture with bitellos monocrystalline |
| CN106826600A (en) * | 2017-01-26 | 2017-06-13 | 福建自贸试验区厦门片区展瑞精芯集成电路有限公司 | The manufacture method of the big diamond monocrystalline cmp trimmer of combined type |
| CN107020574A (en) * | 2016-02-01 | 2017-08-08 | 中国砂轮企业股份有限公司 | Chemical mechanical polishing dresser and manufacturing method thereof |
| CN109454557A (en) * | 2017-09-06 | 2019-03-12 | 咏巨科技有限公司 | Polishing pad trimmer and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140120724A1 (en) * | 2005-05-16 | 2014-05-01 | Chien-Min Sung | Composite conditioner and associated methods |
| TWI583496B (en) * | 2013-05-09 | 2017-05-21 | 中國砂輪企業股份有限公司 | Detection method and apparatus for the tip of a chemical mechanical polishing conditioner |
| JP5954293B2 (en) * | 2013-10-17 | 2016-07-20 | 信越半導体株式会社 | Polishing urethane pad dressing equipment |
| US9818512B2 (en) * | 2014-12-08 | 2017-11-14 | Vishay Dale Electronics, Llc | Thermally sprayed thin film resistor and method of making |
| BR112020006842A2 (en) * | 2017-10-04 | 2020-10-06 | Saint-Gobain Abrasives, Inc. | abrasive article and method for forming it |
| TWI674947B (en) * | 2018-04-19 | 2019-10-21 | 智勝科技股份有限公司 | Polishing pad, manufacturing method of polishing pad and polishing method |
| CN112512749B (en) * | 2018-07-23 | 2022-11-04 | 圣戈班磨料磨具有限公司 | Abrasive article and method of forming the same |
| KR102268582B1 (en) * | 2019-07-15 | 2021-06-24 | 신한다이아몬드공업 주식회사 | CMP MANUFACTURING METHOD AND CMP PAD Conditioner USING THE SAME |
| TWI806466B (en) * | 2022-03-03 | 2023-06-21 | 中國砂輪企業股份有限公司 | Pad conditioner and manufacturing method thereof |
-
2013
- 2013-04-08 TW TW102206277U patent/TWM465659U/en not_active IP Right Cessation
- 2013-04-23 CN CN201320207271.5U patent/CN203380772U/en not_active Expired - Lifetime
-
2014
- 2014-04-08 US US14/248,163 patent/US20140308883A1/en not_active Abandoned
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104084884A (en) * | 2014-07-03 | 2014-10-08 | 南京三超金刚石工具有限公司 | CMP flake grinding trimmer and production method thereof |
| CN107020574A (en) * | 2016-02-01 | 2017-08-08 | 中国砂轮企业股份有限公司 | Chemical mechanical polishing dresser and manufacturing method thereof |
| CN106625248A (en) * | 2017-01-26 | 2017-05-10 | 北京清烯科技有限公司 | High-flattening chemical mechanical grinding pad trimmer with large diamond monocrystals |
| CN106826601A (en) * | 2017-01-26 | 2017-06-13 | 北京清烯科技有限公司 | The method of CMP pad dresser of the manufacture with bitellos monocrystalline |
| CN106826600A (en) * | 2017-01-26 | 2017-06-13 | 福建自贸试验区厦门片区展瑞精芯集成电路有限公司 | The manufacture method of the big diamond monocrystalline cmp trimmer of combined type |
| CN109454557A (en) * | 2017-09-06 | 2019-03-12 | 咏巨科技有限公司 | Polishing pad trimmer and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM465659U (en) | 2013-11-11 |
| US20140308883A1 (en) | 2014-10-16 |
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