TWM545661U - Chemical mechanical polishing conditioner with planarization - Google Patents

Description

Flat chemical mechanical polishing dresser

This creation is about a flattened chemical mechanical polishing dresser, especially a combined flattening chemical mechanical polishing dresser.

Chemical Mechanical Polishing (CMP) is a common grinding process in various industries. The surface of various articles can be ground using a chemical polishing process, including ceramic, tantalum, glass, quartz, or metal wafers. In addition, with the rapid development of integrated circuits, chemical mechanical polishing can achieve large-area planarization, so it is one of the common wafer planarization techniques in semiconductor manufacturing.

In the chemical mechanical polishing process of semiconductors, the wafer (or other semiconductor components) is contacted by a polishing pad (Pad), and the polishing liquid is used as needed to pass the chemical reaction and physical mechanical force to remove the wafer. Impurity or uneven structure of the surface; when the polishing pad is used for a certain period of time, since the grinding debris generated by the grinding process is accumulated on the surface of the polishing pad, the polishing effect and the efficiency are lowered, and therefore, the conditioner can be used for grinding. The surface of the pad is ground to re-roughen the surface of the pad and maintain it in an optimal state of grinding.

However, in the preparation process of the dresser, the polishing layer formed by mixing the abrasive particles and the bonding layer is required to be disposed on the surface of the substrate, and the polishing layer is fixedly bonded to the surface of the substrate by hardening such as brazing or sintering. Although the above-mentioned correction device is suitable for refurbishing the polishing pad, for a more precise chemical mechanical polishing process, such as a chemical mechanical polishing process with a line width of less than 45 nm, the surface of the polishing pad is too rough, so that the wafer is easily scraped. Injury, local over-drow, sag and uneven thickness. As the linewidth requirements of integrated circuits shrink, the need for wafer surface flatness increases, and the requirements for trimmers increase.

In the prior art, for example, the Republic of China Patent Publication No. 201341113 discloses a combined dresser comprising: a bottom substrate; a plurality of grinding units disposed on the surface of the bottom substrate, each of the grinding units including a plurality of Grinding a sharp point, and a bonding agent layer for fixing the grinding sharp points; and an adjustable thickness adhesive layer fixing the polishing unit to the surface of the bottom substrate, wherein the polishing sharp points protrude from the surface The height difference between the first high point and the second high point of the predetermined plane is less than 10 micrometers, and the height difference between the first high point and the tenth high point is less than 20 micrometers, and the height difference between the first high point and the first high point is less than 40 Micron, and the first high point highlights the height of the bond layer by more than 50 microns. This creation also relates to the manufacturing method and application of the combined dresser.

In addition, another known technology of the Republic of China Patent Publication No. 201249595 discloses a polishing pad finisher for a CMP polishing pad comprising a substrate having a first set of protrusions and a second set of protrusions, the first The set of protrusions has a first average height and the second set of protrusions has a second average height, the first average height being different from the second average height, the tops of the protrusions in the first set of protrusions having an uneven surface and the first The tops of the protrusions of the two sets of protrusions have an uneven surface, and the first set of protrusions and the second set of protrusions have a layer of polycrystalline diamond on at least the top surface thereof. The sets of protrusions can be identified, for example, by their height, or by their predetermined position or their base size. This creation proposes various ways of measuring the protrusions, including the average height, peak-to-valley height, or bulge height measured from the back of the pad organizer.

However, the protrusions and the substrate of the above chemical mechanical polishing dresser are integrally formed, and a completely flat surface cannot be obtained, and the polishing performance and the service life of the dresser cannot be improved. In addition, the Republic of China Patent Publication No. 201341113 is of equal height design, but it is combined with a chemical vapor deposition diamond (CVDD) grinding unit to the chemical mechanical polishing dresser. The composition and technical means are different. Therefore, there is an urgent need to develop a high-flatness chemical mechanical polishing dresser that fixes a CVDD grinding unit assembly to a chemical mechanical polishing dresser to fix a small-sized grinding unit on a large-sized base substrate, which can flatten the dresser. Increase the degree to improve the performance and life of the dresser.

The main purpose of this creation is to provide a flat chemical mechanical polishing dresser that uses a combination to fix a small-sized grinding unit to a large-sized base substrate to obtain a flat surface, thereby improving the polishing of the chemical mechanical polishing dresser. effect.

In order to achieve the above object, the present invention provides a flat chemical mechanical polishing dresser comprising: a bottom substrate; a bonding layer disposed on the bottom substrate; and a plurality of polishing units disposed on the bonding layer, each The polishing unit may have an abrasive layer and a polishing unit substrate, the polishing layer may be formed by a chemical vapor deposition method, and the polishing layer may have a plurality of polishing tips; wherein the polishing units may have the same height The chemical mechanical polishing dresser has a flattened surface. In the flat chemical mechanical polishing dresser of the present invention, a chemical mechanical polishing dresser of a flattened surface may be formed by using a combination of a grinding unit of the same thickness and a fixed thickness, or a bonding unit of different thickness by a bonding layer A chemical mechanical polishing conditioner that is sized to form a planarized surface.

In the flat chemical mechanical polishing dresser of the present invention, the height difference of the grinding units may be less than 20 micrometers; in one aspect of the present invention, the height difference of the grinding units may be less than 10 micrometers. Although in the flat chemical mechanical polishing dresser of this creation, the grinding unit has been defined to have the same thickness, due to the accuracy error, it is possible to cause the polishing unit to have a slight height difference.

In the planarized chemical mechanical polishing dresser of the present invention, the shapes of the polishing tips may be arbitrarily changed according to user requirements or grinding conditions, and the shapes of the polishing tips may be blade-shaped, conical, or arc-shaped. Cylindrical, pyramidal, or angular columnar, but the creation is not limited thereto; in one aspect of the present invention, the shape of the grinding tip may be a pyramid shape, and in another aspect of the present creation, the The outer shape of the grinding tip may be a prismatic shape. In another aspect of the present invention, the grinding tips may have a cylindrical shape.

In the flat chemical mechanical polishing dresser of the present invention, the tip orientation, the tip angle or the distance between the grinding tips can be arbitrarily changed according to user requirements or grinding conditions, and the flattening chemistry of the creation. In the mechanical polishing dresser, the grinding tips have the same tip orientation, or the grinding tips have different tip orientations; in one aspect of the creation, the grinding tips can all be at a vertical angle Towards the workpiece being ground (ie, the polishing pad); in another aspect of the present invention, the abrasive tips may all face the workpiece being ground at a non-perpendicular angle. In the flattened chemical mechanical polishing dresser of the present invention, the grinding tips have the same tip angle, or the grinding tips have different tip angles; in one aspect of the creation, the grinding tips The tip angles may all be 60 degrees, 90 degrees, or 120 degrees; in another aspect of the creation, the tip angles of the grinding tips may be partially 60 degrees, a portion is 90 degrees, and depending on the user's The creation is arbitrarily changed, and the creation is not limited to this. In addition, in the planarized chemical mechanical polishing dresser of the present invention, the grinding tips have the same pitch, or the grinding tips have different spacings; in one aspect of the creation, the grinding The pitch of the tips may all be 1.5 times, 2 times, 3 times, or more than the outer diameter of the grinding tips; in another aspect of the creation, the spacing of the grinding tips may be part of the grinding The outer diameter of the tip is twice as large as the outer diameter of the grinding tip, and is arbitrarily changed according to the user's needs. The creation is not limited thereto.

In the flat chemical mechanical polishing dresser of the present invention, the thickness of the bottom substrate and the polishing units can be arbitrarily changed according to user requirements or grinding conditions. In the flat chemical mechanical polishing dresser of the present invention, the thickness of the bottom substrate may be 10 mm to 200 mm, preferably the thickness of the bottom substrate may be 60 mm to 100 mm, more preferably the thickness of the bottom substrate. It may be 80 mm; in addition, in the flat chemical mechanical polishing dresser of the present invention, the grinding units may have the same thickness, or the grinding units may have different thicknesses; In the aspect, the grinding unit may have a thickness of 5 mm to 100 mm, preferably the grinding unit may have a thickness of 15 mm to 30 mm, and preferably the grinding unit may have a thickness of 20 mm.

In the planarized chemical mechanical polishing conditioner of the present invention, an intermediate layer may be further disposed between the polishing layer and the polishing unit substrate, and the intermediate layer is used to lift the polishing layer and the polishing unit substrate. The bonding strength, wherein the intermediate layer is at least one selected from the group consisting of alumina, tantalum carbide, and aluminum nitride; in one aspect of the present invention, the intermediate layer may be composed of tantalum carbide.

In the planarized chemical mechanical polishing conditioner of the present invention, the intermediate layer may be formed by physical vapor deposition, chemical vapor deposition, soldering or brazing, and any method known in the art may be used. This creation is not limited to this.

In the flat chemical mechanical polishing dresser of the present invention, the material of the polishing layer may be single crystal diamond or polycrystalline diamond; in one aspect of the creation, the material of the polishing layer is polycrystalline diamond And the crystal size thereof may be from 5 nm to 50 μm; in another aspect of the present invention, the crystal size is from 10 nm to 20 μm.

In the planarized chemical mechanical polishing dresser of the present invention, the polishing unit substrate may be a conductive substrate or an insulating substrate; wherein the conductive substrate may be formed by electroforming to form a plurality of surface-tipped patterned surfaces. Or the insulating substrate can be formed into a patterned surface of a plurality of surface tips by mechanical grinding or laser processing, and then the polishing layer is formed on the polishing unit substrate having a plurality of surface tips by chemical vapor deposition. And the polishing layer has a plurality of polishing tips, or the surface of the polishing unit substrate is a planarized surface, and then the polishing layer is formed on the polishing unit substrate by chemical vapor deposition, and the polishing is performed. The layer has a plurality of abrasive tips. In the planarized chemical mechanical polishing dresser of the present invention, the insulating substrate may be composed of a ceramic material or a single crystal material; in one aspect of the present invention, the ceramic material may be tantalum carbide; In one aspect, the single crystal material can be tantalum or aluminum oxide. In the planarized chemical mechanical polishing conditioner of the present invention, the conductive substrate may be composed of molybdenum, tungsten, or tungsten carbide.

In the flat chemical mechanical polishing dresser of the present invention, the composition of the bonding layer can be arbitrarily changed according to the conditions and requirements of the grinding process, and the composition of the bonding layer can be ceramic material, brazing material, plating material, metal Materials, or polymer materials, this creation is not limited to this. In one aspect of the present invention, the bonding layer may be a brazing material, and the brazing material may be at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and combinations thereof. . In another aspect of the present invention, the polymer material may be an epoxy resin, a polyester resin, a polyacrylic resin, or a phenolic resin. In addition, in the planarized chemical mechanical polishing dresser of the present invention, the material and size of the bottom substrate may be arbitrarily changed according to the conditions and requirements of the polishing process, wherein the material of the bottom substrate may be a stainless steel substrate or a mold steel substrate. The metal alloy substrate, the ceramic substrate or the plastic substrate or a combination thereof is not limited to this creation. In a preferred aspect of the present invention, the material of the substrate may be a stainless steel substrate.

In the planarized chemical mechanical polishing dresser of the present invention, the bottom substrate may be a planar substrate or a groove substrate; in one aspect of the present invention, the bottom substrate may be a planar substrate, in another aspect of the present creation. The bottom substrate may be a groove substrate.

Therefore, the effect of the present invention is to use a bonding unit of the same thickness and a bonding layer of a fixed thickness to form a planarized surface, or a polishing unit of different thickness is adjusted by the thickness of the bonding layer to form a planarized surface. In summary, the present invention is characterized in that a small-sized grinding unit is fixed on a large-sized base substrate by a combination to obtain a flat surface, thereby improving the polishing effect of the chemical mechanical polishing dresser.

The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate the other advantages and effects of the present invention from the disclosure herein. In addition, the present invention may be implemented or applied by various other specific embodiments, and various modifications and changes may be made without departing from the spirit of the invention.

Example 1

Please refer to FIG. 1 , which is a schematic diagram of the planarized chemical mechanical polishing conditioner of the first embodiment. First, a stainless steel base substrate 10 having a thickness of 80 mm and being a flat substrate is provided; then, a bonding layer 11 is disposed on the base substrate 10, and secondly, a plurality of polishing units 12 are provided, each of the polishing units 12 There is a polishing layer 14 and a polishing unit substrate 13 , wherein the polishing unit substrate 13 is a ceramic substrate composed of tantalum carbide, and the surface of the polishing unit substrate 13 is a planarized surface, and then, by chemical vapor deposition Forming the polishing layer 14 of the same thickness such that the polishing layer 14 is formed on the polishing unit substrate 13 having a plurality of surface tips, and the polishing layer 14 has a plurality of polishing tips, and the polishing tips are shaped like pyramids , for example, a quadrangular pyramid shape (as shown in FIG. 4A), and the polishing tips have the same tip orientation and the same tip angle, and are arranged on the polishing unit substrate by a continuous array; finally, the grinding is performed. The unit 12 is fixed to the base substrate 10 by the bonding layer 11; further, the polishing units 12 have the same height to form a chemical machine having a flattened surface. Mechanical polishing dresser 1. However, due to the influence of the precision error, the polishing units 12 have a slight height difference, and therefore, the height difference of the polishing units 12 is controlled to be less than 10 μm. Please refer to FIG. 3. FIG. 3 is a schematic cross-sectional view of the planarized chemical mechanical polishing conditioner of Embodiment 1. In FIG. 3, the polishing unit 12 having the same height is disposed on the bottom substrate 10 and the bonding layer 11, the polishing unit 12 includes the polishing layer 14 and the polishing substrate 13, and the polishing tips are formed into a pyramid shape, and further, The polishing units 12 are alternately arranged on the bonding layer 11 in a ring shape.

Example 2

Please refer to FIG. 2, which is a schematic diagram of a planarized chemical mechanical polishing conditioner according to the second embodiment of the present invention. Embodiment 2 is substantially the same as the apparatus of the planarized chemical mechanical polishing conditioner described in the foregoing Embodiment 1, except that Embodiment 1 has a bonding layer and a polishing unit of the same thickness, and Embodiment 2 has different thicknesses. The polishing unit is adjusted by the thickness of the bonding layer to form a planarized surface. First, a bottom substrate 20 of stainless steel having a thickness of 80 mm and a planar substrate is provided; then, a bonding layer 21 is disposed on the base substrate 20, and second, a plurality of polishing units 22 are provided, each of the polishing units 22 having a The polishing layer 24 and a polishing unit substrate 23, wherein the polishing unit substrate 23 is a ceramic substrate composed of tantalum carbide, and the polishing unit substrate 23 has two different thicknesses of 20 mm and 30 mm, and the polishing unit substrate 23 The surface is a planarized surface, and then, the polishing layer 14 of the same thickness is formed by chemical vapor deposition, and the polishing layer 24 is formed on the polishing unit substrate 23 having a plurality of surface tips, and the polishing layer 24 is provided. a plurality of grinding tips, and the grinding tips are formed in the shape of a pyramid, for example, a quadrangular pyramid shape (as shown in FIG. 4A), and the grinding tips have the same tip orientation or the same tip angle, by continuous The array is arranged on the substrate of the polishing unit. Finally, the polishing unit 22 is fixed on the base substrate 20 by the bonding layer 21, and is adjusted by the bonding layer 21. The unit 22 is milled to form a chemical mechanical polishing conditioner 2 that planarizes the surface.

Example 3~4

The inventive embodiments 3 to 4 are substantially the same as the flattened chemical mechanical polishing conditioner described in the first embodiment, except that the polishing tip of the embodiment 1 is formed into a pyramid shape, and the embodiment 3 The ~4 grinding tip has a variety of different specific pattern profiles. Please refer to FIG. 4A to FIG. 4C , which are schematic diagrams of the outer shape of the polishing tip of the first embodiment and the third to fourth embodiments.

As shown in FIG. 4A, the plurality of polishing tips 15 of the embodiment 1 have a specific pattern shape of a pyramid shape, and the polishing tips 15 of the polishing layer 14 are arranged on the polishing unit substrate 13 by a continuous array. As shown in FIG. 4B, the plurality of polishing tips 35 of Embodiment 3 have a specific pattern shape of a prismatic shape, for example, a quadrangular prism shape, and the polishing tips 35 of the polishing layer 34 are arranged in a continuous array by grinding. On the unit substrate 33. As shown in FIG. 4C, the plurality of polishing tips 45 of the embodiment 4 have a cylindrical shape in a specific pattern, and the polishing tips 45 of the polishing layer 44 are arranged on the polishing unit substrate 43 in a continuous array.

The above-described embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

1,2‧‧‧Chemical mechanical polishing dresser
10,20‧‧‧Bottom substrate
11, 21‧‧ ‧ bonding layer
12,22‧‧‧grinding unit
13,23,33,43‧‧‧grinding unit substrate
14,24,34,44‧‧‧Abrasive layer
15,35,45‧‧‧ grinding tips

Fig. 1 is a schematic view showing the planarized chemical mechanical polishing conditioner of the first embodiment. Fig. 2 is a schematic view showing the planarized chemical mechanical polishing conditioner of the second embodiment. 3 is a schematic cross-sectional view showing the planarized chemical mechanical polishing conditioner of Embodiment 1. 4A to 4C are schematic views showing the outer shape of the polishing tip of the first embodiment and the third to fourth embodiments.

1‧‧‧Chemical mechanical polishing dresser

10‧‧‧Bottom substrate

11‧‧‧Combination layer

12‧‧‧grinding unit

13‧‧‧ Grinding unit substrate

14‧‧‧Abrasive layer

Claims (15)

A planarized chemical mechanical polishing dresser comprising: a bottom substrate; a bonding layer disposed on the bottom substrate; and a plurality of polishing units disposed on the bonding layer, each polishing unit having a grinding And a polishing unit substrate, wherein the polishing layer is a diamond coating formed by chemical vapor deposition, and the polishing layer has a plurality of polishing tips; wherein the polishing units have the same height, and the chemical mechanical polishing is performed The device has a flattened surface. The planarized chemical mechanical polishing conditioner of claim 1, wherein the polishing units have a height difference of less than 20 micrometers. The planarized chemical mechanical polishing conditioner according to claim 1, wherein the polishing tips are formed into a blade shape, a cone shape, an arc shape, a column shape, a pyramid shape, or a prism shape. The flattened chemical mechanical polishing conditioner of claim 1, wherein the abrasive tips have the same tip orientation, or the abrasive tips have different tip orientations. The flattened chemical mechanical polishing conditioner of claim 1, wherein the abrasive tips have the same tip angle, or the abrasive tips have different tip angles. The flat chemical mechanical polishing dresser of claim 1, wherein the grinding tips have the same pitch, or the grinding tips have different spacings. The planarized chemical mechanical polishing conditioner of claim 1, wherein the polishing units have the same thickness, or the polishing units have different thicknesses. The flat chemical mechanical polishing conditioner according to claim 1, further comprising an intermediate layer disposed between the polishing layer and the polishing unit substrate. The planarized chemical mechanical polishing conditioner of claim 8, wherein the intermediate layer is at least one selected from the group consisting of alumina, tantalum carbide, and aluminum nitride. The flat chemical mechanical polishing conditioner according to claim 1, wherein the polishing unit substrate is a conductive substrate or an insulating substrate. The planarized chemical mechanical polishing conditioner according to claim 1, wherein the bonding layer is composed of a ceramic material, a brazing material, a plating material, a metal material, or a polymer material. The planarized chemical mechanical polishing conditioner according to claim 11, wherein the polymer material is an epoxy resin, a polyester resin, a polyacrylic resin, or a phenol resin. The flat chemical mechanical polishing dresser of claim 11, wherein the brazing material is at least one selected from the group consisting of iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, and combinations thereof. group. The planarized chemical mechanical polishing conditioner according to claim 1, wherein the bottom substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate, a plastic substrate, or a combination thereof. The flat chemical mechanical polishing dresser of claim 1, wherein the bottom substrate is a planar substrate or a groove substrate.