JP2010209371A - Carbon film coated member, method for forming carbon film, and cmp pad conditioner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a carbon film coated member in which the peeling strength of a carbon film to a substrate is enhanced and peeling can be prevented, and to provide a method for forming a carbon film and a conditioner for a CMP (chemical mechanical polishing) pad. <P>SOLUTION: The carbon film coated member includes the substrate and the carbon film that covers the surface 1A of the substrate, wherein, a continuous groove 11 in a curved line is formed on the surface 1A. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a carbon film covering member such as a tool or member coated on a carbon film made of diamond particles or the like, a carbon film forming method, and a CMP pad conditioner.

  In recent years, active research has been conducted on the use of carbon films made of diamond particles or DLC (diamond-like carbon) for electronic devices, tools, and the like by chemical vapor deposition (CVD). That is, by forming the carbon film on a tool, member, or the like, the mechanical properties such as wear resistance, hardness, rigidity, and the like required for the tool, member, etc. are met.

  When such a carbon film is used, a bonding force between the carbon film and the substrate to be formed is required. Specifically, although the bonds between the carbon film and the substrate are partially chemical bonds, most of them are like intermolecular forces with relatively weak bonding forces. It is necessary to ensure the peel strength so that it does not peel easily from the substrate.

  As a technique for ensuring the peel strength, for example, in Patent Document 1, after a pinhole is formed on the surface of a base material by a strong acid treatment, a diamond film (carbon film) is formed on the surface. The peel strength for the substrate is ensured. Moreover, in patent document 2, after forming an unevenness | corrugation in the surface of a base material by blasting, DLC film (carbon film) etc. are formed into a film and the above-mentioned peeling strength is ensured.

  On the other hand, with the progress of the semiconductor industry, there is an increasing need for high-precision finishing of metals, semiconductors, ceramics, and other surfaces. In particular, for semiconductor wafers, surface integration on the order of nanometers is required as well as the degree of integration. Has been. In order to cope with such high-precision surface finishing, CMP (Chemical Mechanical Polish) polishing using a porous CMP pad is generally performed on a semiconductor wafer.

  A CMP pad used for polishing a semiconductor wafer or the like is clogged or compressively deformed as the polishing time elapses, and its surface state gradually changes. As a result, undesired phenomena such as a decrease in polishing rate and non-uniform polishing occur. By using a CMP pad conditioner and grinding the surface of the CMP pad, the surface state of the CMP pad is kept constant and good polishing is achieved. The device is maintained to maintain the state.

  Such a CMP pad conditioner has, for example, a disk-shaped substrate (base material) and a plurality of cutting blades formed on the surface of the substrate facing the CMP pad side. These cutting blades are covered with a carbon film made of diamond particles or the like to ensure sharpness and wear resistance.

JP 7-156002 A JP 2008-229809 A

  However, in the carbon film as described above, it cannot be said that the bonding force to the base material is still sufficient, and further improvement in peel strength is required.

  The present invention has been made in view of such circumstances, and provides a carbon film covering member, a carbon film forming method, and a CMP pad conditioner that can increase the peel strength of a carbon film with respect to a base material and prevent peeling. The purpose is to do.

In order to achieve the above object, the present invention proposes the following means.
That is, the present invention is a carbon film-coated member having a base material and a carbon film that covers the surface of the base material, wherein continuous curved grooves are formed on the surface. And

  According to the carbon film covering member according to the present invention, since the continuous curved groove is formed on the surface of the base material, the peel strength of the carbon film with respect to the base material is sufficiently secured. Specifically, by forming the groove in the base material in this way, the contact area between the base material and the carbon film is increased, and the portion of the carbon film formed in the groove has an anchor effect, The adhesion strength (bonding force) between the carbon film and the substrate is dramatically increased.

  In addition, since the groove is formed in a continuous curved shape, the above-described peel strength is set to be substantially uniform with respect to the external force acting on the carbon film (direction along the surface), The bonding force between the carbon film and the substrate is further improved. That is, for example, when the groove is formed in a linear shape, a lattice shape, or the like, directivity occurs in the peel strength with respect to the external force, and in contrast, the coupling force may not be stable, According to the configuration of the present invention, the peel strength of the carbon film with respect to the substrate is stably ensured regardless of the direction in which the external force acts. Therefore, the carbon film is reliably prevented from peeling off from the substrate.

  Moreover, the carbon film coating | coated member which concerns on this invention WHEREIN: The width | variety of the said groove | channel is set in the range of 10-50 micrometers, and it is good also as a depth being set in the range of 0.3-1 micrometer.

  According to the carbon film covering member of the present invention, the groove width is set in the range of 10 to 50 μm and the depth is set in the range of 0.3 to 1 μm, so that the rigidity of the base material is impaired. Therefore, a sufficient contact area between the base material and the carbon film can be ensured, and the carbon film formed in the groove has an anchor effect more reliably, and the peel strength of the carbon film with respect to the base material is increased. .

  In the carbon film covering member according to the present invention, the groove may be formed in a spiral shape.

  According to the carbon film covering member according to the present invention, since the groove is formed in a spiral shape, the peel strength between the carbon film and the base material is higher than the external force acting on the carbon film in the surface direction. It is set uniformly. Therefore, the carbon film is reliably prevented from peeling off from the substrate.

  Further, the present invention is a method for forming a carbon film of the above-described carbon film covering member, wherein the groove is continuously formed on the surface of the base material by laser processing, and then the surface is formed on the surface by a CVD method. A carbon film is formed.

  According to the method for forming a carbon film according to the present invention, as described above, since the groove has a continuous curved shape, the groove can be continuously formed using laser processing. Therefore, the groove can be formed on the surface of the base material in a relatively simple and short time. Further, since the surface is formed with a carbon film by the CVD method, the carbon film can be formed uniformly and accurately.

  In addition, the present invention includes a base material, a cutting blade formed to protrude on the surface of the base material, and a carbon film that covers the surface, and a CMP pad disposed to face the surface, the cutting blade A CMP pad conditioner for performing a grinding process using the base material and the carbon film, wherein the base material and the carbon film of the carbon film covering member described above are used as the base material and the carbon film.

  According to the CMP pad conditioner according to the present invention, since the base material and the carbon film of the carbon film covering member described above are used, the peel strength of the carbon film with respect to the base material is increased and the rigidity of the cutting edge is sufficiently secured. Is done. Therefore, the grinding performance of the CMP pad conditioner with respect to the CMP pad is stably secured, and the tool life is extended. In addition, since the carbon film is surely prevented from being peeled off, scratches on the semiconductor wafer and the like are prevented.

According to the carbon film covering member according to the present invention, the peel strength of the carbon film with respect to the base material is increased, and the carbon film is prevented from being peeled, so that the performance is stably secured.
Moreover, according to the carbon film forming method of the present invention, such a carbon film can be formed relatively easily and with high accuracy.
Further, according to the CMP pad conditioner according to the present invention, the CMP pad can be ground accurately and stably, and the tool life is extended.

It is a fragmentary sectional side view of the CMP pad conditioner which concerns on one Embodiment of this invention. It is a top view explaining the shape of the groove | channel of the CMP pad conditioner which concerns on one Embodiment of this invention. It is a top view which shows the modification of the groove | channel of the CMP pad conditioner which concerns on one Embodiment of this invention.

  The CMP pad conditioner (carbon film covering member) 10 of the present embodiment has a disc shape or an annular plate shape, and as shown in FIG. 1, a substrate (base material) 1 that rotates around its central axis, It has a plurality of cutting blades (not shown) formed to protrude from the surface 1A of the substrate 1 and a carbon film 2 that covers the surface 1A. Further, the CMP pad conditioner 10 uses these cutting blades to grind the CMP pad disposed to face the surface 1A. The cutting blade is formed in, for example, a polygonal pyramid shape, a polygonal column shape, a conical shape, or a truncated conical shape. These cutting blades are also covered with the carbon film 2. In addition, the CMP pad performs polishing processing on the semiconductor wafer.

The substrate 1 is made of a ceramic material such as silicon carbide (SiC) or silicon nitride (Si ₃ N ₄ ), and a continuous curved groove 11 is formed on the surface 1A.
As shown in a plan view of FIG. 2, the groove 11 is formed in a spiral shape so as to circulate along the circumferential direction from the center and gradually expand in the radial direction as it circulates. Has been. In the example shown in the drawing, the groove 11 is formed to extend from the central portion so as to circulate counterclockwise. In addition, the groove | channel 11 may be extended and formed so that it may circulate clockwise from a center part.

  In FIG. 1, the width W of the groove 11 is set within a range of 10 to 50 μm. Further, the depth D of the groove 11 is set within a range of 0.3 to 1 μm. Further, the center-to-center distance (pitch) P between the grooves 11 adjacent to each other in the radial direction is set within a range of 50 to 250 μm.

In addition, the carbon film 2 has a relatively large SP ³ -bonded diamond particle having an average particle diameter exceeding 200 nm, a diamond particle having an average particle diameter of 200 nm or less, that is, a so-called nanocrystal diamond, SP ³ bond and It consists of amorphous DLC etc. in which SP ² bonds are mixed.

Next, a procedure for forming the carbon film 2 on the surface 1A of the substrate 1 will be described.
First, a shape corresponding to the cutting edge is provided in advance on the surface 1A of the substrate 1.

Next, grooves 11 are continuously formed on the surface 1A by laser processing.
Next, a carbon film 2 is formed on the surface 1A of the substrate 1 by a CVD method using a reaction vessel composed of a gas phase synthesis method hot filament furnace.
In this way, the carbon film 2 is formed on the surface 1A of the substrate 1, and the CMP pad conditioner 10 is manufactured.

As described above, after forming the groove 11 on the surface 1A of the substrate 1 by laser processing, seed crystal diamond powder may be adhered to the surface 1A. That is, a diamond powder made of diamond fine particles may be used as a seed crystal, and the diamond powder may be dispersed and uniformly adhered to the surface 1A by coating or the like, and then the carbon film 2 may be formed.
Moreover, you may perform the provision of the shape of the cutting blade mentioned above, and formation of the groove | channel 11 simultaneously. Moreover, after forming the groove | channel 11, it is good also as giving the shape of a cutting blade.

  As described above, according to the CMP pad conditioner 10 according to the present embodiment, since the continuous curved groove 11 is formed on the surface 1A of the substrate 1, the peel strength of the carbon film 2 with respect to the substrate 1 is determined. Is sufficiently secured. Specifically, by forming the groove 11 in the substrate 1 in this manner, the contact area between the substrate 1 and the carbon film 2 is increased, and the portion of the carbon film 2 formed in the groove 11 has an anchor effect. As a result, the adhesion strength (bonding force) between the carbon film 2 and the substrate 1 is dramatically increased.

  Further, since the groove 11 is formed in a continuous curved shape, the aforementioned peel strength is set to be substantially uniform with respect to the external force acting on the carbon film 2 in the surface direction (direction along the surface 1A). Thus, the bonding force between the carbon film 2 and the substrate 1 is further improved. That is, for example, when the groove 11 is formed in a linear shape, a lattice shape, or the like, directivity occurs in the peel strength with respect to the external force, and the coupling force may not be stable, According to the configuration of the CMP pad conditioner 10, the peel strength of the carbon film 2 with respect to the substrate 1 is stably ensured regardless of the direction in which the external force acts. Therefore, the carbon film 2 can be reliably prevented from peeling off from the substrate 1.

  Further, since the width W of the groove 11 is set in the range of 10 to 50 μm and the depth D is set in the range of 0.3 to 1 μm, the substrate 1 and the carbon 1 are not impaired without impairing the rigidity of the substrate 1. A sufficient contact area with the film 2 can be ensured, and the carbon film 2 formed in the groove 11 exhibits an anchor effect more reliably, and the peel strength of the carbon film 2 with respect to the substrate 1 is increased. Further, since the distance P between the centers of the adjacent grooves 11 is set within a range of 50 to 250 μm, the above-described peel strength is ensured while sufficiently securing the rigidity of the portion of the substrate 1 between the grooves 11. Is definitely increased.

  Further, since the groove 11 is formed in a spiral shape, the peel strength between the carbon film 2 and the substrate 1 is set more uniformly with respect to the external force acting on the carbon film 2 in the surface direction. Therefore, the carbon film 2 can be reliably prevented from peeling off from the substrate 1.

Further, according to the method for forming the carbon film 2 of the present embodiment, as described above, since the groove 11 has a continuous curved shape, the groove 11 can be continuously formed by using laser processing. Specifically, for example, when the groove 11 has a shape having a corner or an intermittent shape, the laser is likely to overrun from the processing portion during laser processing, and the processing is interrupted each time for alignment. The need arises and processing time increases. On the other hand, in this embodiment, since the laser processing of the groove 11 can be performed continuously without being interrupted as described above, the groove 11 can be formed relatively easily in a short time.
Moreover, since the surface 1A is formed with the carbon film 2 by the CVD method, the carbon film 2 can be formed uniformly and accurately.

  In addition, since the CMP pad conditioner 10 uses the substrate 1 and the carbon film 2 described above, the peeling strength of the carbon film 2 with respect to the substrate 1 is increased, and the rigidity of the cutting blade is sufficiently secured. Accordingly, the grinding performance of the CMP pad conditioner 10 with respect to the CMP pad is stably secured, and the tool life is extended. Moreover, since the peeling of the carbon film 2 is reliably prevented, scratching of the semiconductor wafer is prevented.

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the present embodiment, the CMP pad conditioner 10 has been described as the carbon film covering member, but is not limited thereto. That is, the carbon film covering member has a base material and a carbon film 2 that covers the surface 1A of the base material, and a continuous curved groove 11 is formed on the surface 1A. A member such as a cutting tool such as a cutting tool or an electronic device may be used.

  Moreover, the groove | channel 11 should just be formed in the shape of a continuous curve, and is not limited to the spiral shape demonstrated in this embodiment. FIG. 3 shows a modification of the groove 11. In FIG. 3A, the groove 11 gradually increases as the distance P between the centers of the adjacent grooves 11 in the radial direction increases from the radially inner side to the outer side. In order to increase, it is formed in a logarithmic spiral shape or an involute curve shape. Moreover, in FIG.3 (b), the groove | channel 11 is formed in the shape projected on the plane so that the shape of a smoothly continuous trochoid curve or a spiral shape may be squinted. In FIG. 3C, the groove 11 is formed in a wave shape or a sine (or cosine) curve shape. Moreover, the groove | channel 11 may be formed combining the curve mentioned above suitably, or may be formed in the shape of other continuous curves.

In this embodiment, the groove 11 is formed by laser processing. However, the groove 11 may be formed by blasting or molding other than laser processing.
Further, the width W, depth D, and center-to-center distance P of the groove 11 are not limited to the numerical ranges described above.

  Hereinafter, the present invention will be specifically described by way of examples. However, the present invention is not limited to this embodiment.

[Example 1]
As Example 1, first, a substrate 1 made of SiC and a substrate 1 made of Si ₃ N ₄ were prepared, and the surface 1A of these substrates 1 was formed with an arithmetic average roughness Ra = 0.01. Next, a spiral groove 11 shown in FIG. 2 was formed on the surface 1A of the substrate 1 using an Nd: YAG laser third harmonic. Specifically, the groove 11 was formed such that the width W = 20 μm, the depth D = 0.3 to 1 μm, and the center-to-center distance P = 250 μm.

Next, a carbon film 2 was formed on the surface 1A of these substrates 1 by a CVD method using a gas phase synthesis method hot filament furnace. Specifically, the carbon film 2 has an average particle diameter becomes from a large SP ³ bond of the diamond particles of relatively particle size greater than 200 nm, methane (CH ₄₎ Concentration: 1% of the set, to a film thickness of 10μm A film was formed. In this way, the CMP pad conditioner 10 was produced.

  Next, the peel strength of the carbon film 2 with respect to the substrate 1 in these CMP pad conditioners 10 was measured by a scratch test method. The results are shown in Table 1.

[Comparative Example 1]
Further, as Comparative Example 1, a CMP pad conditioner was produced without forming the groove 11 on the surface 1A of the substrate 1. Other than that, the measurement was performed under the same conditions as in Example 1.

As shown in Table 1, in Example 1, it was confirmed that the peel strength of the carbon film 2 with respect to the substrate 1 reached 20 N, and the peel strength of the carbon film 2 was sufficiently secured. When the CMP pad conditioner 10 of Example 1 was attached to a CMP apparatus and used for grinding the CMP pad, the carbon film 2 did not peel even when the processing time exceeded 2000 hours.
On the other hand, in Comparative Example 1, the aforementioned peel strength was only 10 N, and the peel strength was not sufficiently ensured.

1 Substrate (base material)
1A Substrate surface 2 Carbon film 10 CMP pad conditioner (carbon film coating member)
11 Groove D Groove depth W Groove width

Claims (5)

A carbon film covering member having a base material and a carbon film covering the surface of the base material,
A carbon film-covered member, wherein a continuous curved groove is formed on the surface. The carbon film-coated member according to claim 1,
The carbon film covering member, wherein a width of the groove is set in a range of 10 to 50 μm and a depth is set in a range of 0.3 to 1 μm. The carbon film covering member according to claim 1 or 2,
The carbon film covering member, wherein the groove is formed in a spiral shape. It is a formation method of the carbon film of the carbon film covering member according to any one of claims 1 to 3,
After forming the groove continuously on the surface of the substrate by laser processing,
A method for forming a carbon film, comprising: depositing the carbon film on the surface by a CVD method. A substrate, a cutting blade formed to protrude from the surface of the substrate, and a carbon film covering the surface,
A CMP pad conditioner that performs grinding using the cutting blade on the CMP pad disposed opposite to the surface,
A CMP pad conditioner, wherein the base material and the carbon film of the carbon film covering member according to claim 1 are used for the base material and the carbon film.

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