JP2010125586A - Conditioner for semiconductor polishing cloth and method of manufacturing the same - Google Patents

Conditioner for semiconductor polishing cloth and method of manufacturing the same Download PDF

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JP2010125586A
JP2010125586A JP2008306243A JP2008306243A JP2010125586A JP 2010125586 A JP2010125586 A JP 2010125586A JP 2008306243 A JP2008306243 A JP 2008306243A JP 2008306243 A JP2008306243 A JP 2008306243A JP 2010125586 A JP2010125586 A JP 2010125586A
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polishing cloth
semiconductor polishing
cutting
cutting edge
substrate
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Masato Nakamura
正人 中村
Masakuni Takahashi
正訓 高橋
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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<P>PROBLEM TO BE SOLVED: To provide a conditioner for semiconductor polishing cloth improving polishing efficiency of cutting edges and stably securing a long life of a tool, and to provide a method of manufacturing the conditioner. <P>SOLUTION: The conditioner for the semiconductor polishing cloth grinds the semiconductor polishing cloth arranged to face against a substrate 11 by using the plurality of cutting edges protruding out from a surface of the substrate 11. The surface of the substrate 11 and the cutting edges are coated by a diamond film. The cutting edges include first cutting edges 1 and second cutting edges 2, the second cutting edges being formed so that their height protruding out from the surface of the substrate 11 becomes higher than the first cutting edges 1. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、半導体ウェーハ等の研磨を行う半導体研磨装置において半導体研磨布のコンディショニングに用いられる半導体研磨布用コンディショナー及びその製造方法に関する。   The present invention relates to a semiconductor polishing cloth conditioner used for conditioning a semiconductor polishing cloth in a semiconductor polishing apparatus for polishing a semiconductor wafer or the like, and a method for manufacturing the same.

近年、半導体産業の進展とともに、金属、半導体、セラミックスなどの表面を高精度に仕上げる加工方法の必要性が高まっており、特に、半導体ウェーハでは、その集積度の向上とともにナノメーターオーダーの表面仕上げが要求されている。このような高精度の表面仕上げに対応するために、半導体ウェーハに対して、多孔性の半導体研磨布を用いたＣＭＰ（ケミカルメカニカルポリッシュ）研磨が一般に行われている。   In recent years, with the progress of the semiconductor industry, there is an increasing need for processing methods for finishing surfaces of metals, semiconductors, ceramics, etc. with high precision. It is requested. In order to cope with such a high-precision surface finish, CMP (chemical mechanical polishing) polishing using a porous semiconductor polishing cloth is generally performed on a semiconductor wafer.

半導体ウェーハ等の研磨に用いられる半導体研磨布は、研磨時間が経過していくにつれ目詰まりや圧縮変形を生じ、その表面状態が次第に変化していく。すると、研磨速度の低下や不均一研磨等の好ましくない現象が生じるので、半導体研磨布の表面を定期的に研削加工することにより、半導体研磨布の表面状態を一定に保って、良好な研磨状態を維持する工夫が行われている。   A semiconductor polishing cloth used for polishing a semiconductor wafer or the like causes clogging or compressive deformation as the polishing time elapses, and its surface state gradually changes. Then, undesired phenomena such as a decrease in polishing rate and non-uniform polishing occur, so by periodically grinding the surface of the semiconductor polishing cloth, the surface state of the semiconductor polishing cloth is kept constant, and a good polishing state The device is maintained.

半導体研磨布を研削加工するために用いられる半導体研磨布用コンディショナーとしては、例えば、特許文献１〜３に開示されたものが知られている。特許文献１、２の半導体研磨布用コンディショナーでは、基板の表面に同じ高さの切刃が複数形成され、これらの切刃及び基板の表面を化学気相蒸着（ＣＶＤ）法により形成したダイヤモンド膜でコーティングしている。   As a conditioner for a semiconductor polishing cloth used for grinding a semiconductor polishing cloth, for example, those disclosed in Patent Documents 1 to 3 are known. In the conditioner for semiconductor polishing cloth of Patent Documents 1 and 2, a diamond film in which a plurality of cutting blades having the same height are formed on the surface of the substrate, and these cutting blades and the surface of the substrate are formed by a chemical vapor deposition (CVD) method. It is coated with.

また、特許文献３に記載された半導体研磨布用コンディショナーは、基板の表面に互いに大きさの異なる人造ダイヤモンド粒子（切刃）を夫々飛散させニッケル薄膜で接着して形成されている。このように基板の表面に大きさの異なる人造ダイヤモンド粒子を夫々形成することで、コンディショニング能力を高めるようにしている。
特許第３８２９０９２号公報 特許第２９５７５１９号公報 特開２００５−４０９４６号公報 The conditioner for semiconductor polishing cloth described in Patent Document 3 is formed by scattering artificial diamond particles (cutting blades) of different sizes on the surface of a substrate and bonding them with a nickel thin film. In this way, by forming artificial diamond particles having different sizes on the surface of the substrate, the conditioning ability is enhanced.
Japanese Patent No. 3829092 Japanese Patent No. 2957519 Japanese Patent Laid-Open No. 2005-40946

しかしながら、特許文献１、２のような半導体研磨布用コンディショナーでは、基板の表面から突出する切刃の高さが全て同じ設定とされているので、下記のような課題があった。すなわち、切刃全体が、半導体研磨布の研削加工及び半導体研磨布から受ける荷重分散を行うことから、半導体研磨布を切り込んで研削効率を高めることが難しく、半導体研磨布のウェーハリムーバルレート（ＷＲＲ）を高めパッドウェアレート（ＰＷＲ）を抑制することが難しかった。   However, in the conditioner for semiconductor polishing cloth as in Patent Documents 1 and 2, the heights of the cutting blades protruding from the surface of the substrate are all set to be the same, and thus there are the following problems. That is, since the entire cutting blade performs the grinding process of the semiconductor polishing cloth and the load distribution received from the semiconductor polishing cloth, it is difficult to cut the semiconductor polishing cloth to increase the grinding efficiency, and the wafer removal rate (WRR) of the semiconductor polishing cloth. It was difficult to suppress the pad wear rate (PWR).

一方、特許文献３の半導体研磨布用コンディショナーのように、大きさの異なる切刃を基板の表面に形成すれば、基板の表面から突出する高さが比較的高い切刃を用いて主として半導体研磨布に切り込んでいき、前記高さが比較的低い切刃を用いて主として荷重を分散させることができる。しかしながら、特許文献３のように、人造ダイヤモンド粒子を基板の表面に飛散させるような手法では、切刃の前記高さが精度よく設定されないことから、半導体研磨布を研削加工する性能が半導体研磨布用コンディショナーを交換する毎に変動して、半導体研磨布のＷＲＲやＰＷＲを安定させることができなかった。   On the other hand, if the cutting blades having different sizes are formed on the surface of the substrate as in the conditioner for semiconductor polishing cloth of Patent Document 3, the semiconductor polishing is mainly performed using the cutting blade having a relatively high height protruding from the surface of the substrate. Cutting into the cloth, the load can be mainly dispersed using the cutting blade having a relatively low height. However, as disclosed in Patent Document 3, in the method in which artificial diamond particles are scattered on the surface of the substrate, the height of the cutting blade is not accurately set. It fluctuated every time the conditioner for use was changed, and the WRR and PWR of the semiconductor polishing cloth could not be stabilized.

本発明は、このような事情に鑑みてなされたものであって、切刃の研削効率が高められるとともに、工具寿命が長期に亘り安定して確保される半導体研磨布用コンディショナー及びその製造方法を提供することを目的とする。   The present invention has been made in view of such circumstances, and provides a conditioner for a semiconductor polishing cloth and a method for manufacturing the same, in which the grinding efficiency of the cutting edge is improved and the tool life is stably secured over a long period of time. The purpose is to provide.

前記目的を達成するために、本発明は以下の手段を提案している。
すなわち本発明は、基板の表面から突出する複数の切刃を用いて、前記基板に対向配置された半導体研磨布に研削加工を施す半導体研磨布用コンディショナーであって、前記基板の表面及び前記切刃が、ダイヤモンド膜で被覆されており、前記切刃は、第１切刃と、前記基板の表面から突出する高さが前記第１切刃よりも高く形成された第２切刃とを有することを特徴とする。 In order to achieve the above object, the present invention proposes the following means.
That is, the present invention provides a conditioner for a semiconductor polishing cloth that uses a plurality of cutting blades protruding from the surface of the substrate to grind the semiconductor polishing cloth disposed to face the substrate, the surface of the substrate and the cutting edge. The blade is covered with a diamond film, and the cutting blade includes a first cutting blade and a second cutting blade formed so that a height protruding from the surface of the substrate is higher than the first cutting blade. It is characterized by that.

本発明に係る半導体研磨布用コンディショナーによれば、基板の表面から突出する高さが互いに異なる第１切刃及び第２切刃を有しているので、半導体研磨布を研削する際、第１、第２切刃のうち前記高さが高い第２切刃が主として半導体研磨布に切り込んでいき、前記高さが低い第１切刃が主として半導体研磨布に押し付けられて生じた荷重を受けて分散させる。すなわち、従来のように、前記高さが同じ複数の切刃を用いた場合には、切刃全体が研削加工及び荷重分散を行うため、半導体研磨布に切り込んで研削効率を高めることが難しく、半導体研磨布のＷＲＲを高めＰＷＲを抑制することが難しかった。一方、本発明では、前記高さが異なる第１、第２切刃が、研削加工と荷重分散とを夫々分担するように形成されているので、研削する半導体研磨布のＷＲＲが高められるとともにＰＷＲが抑制される。また、このように前記高さの低い第１切刃に荷重分散させることで、例えば、前記基板の表面の切刃以外の部分において荷重分散させる場合に対比して、研削効率が大幅に高められている。   According to the conditioner for a semiconductor polishing cloth according to the present invention, since the first cutting edge and the second cutting edge protruding from the surface of the substrate are different from each other, when the semiconductor polishing cloth is ground, The second cutting blade having a high height among the second cutting blades is mainly cut into the semiconductor polishing cloth, and the first cutting blade having the low height is mainly pressed against the semiconductor polishing cloth to receive a load. Disperse. That is, as in the past, when using a plurality of cutting blades having the same height, since the entire cutting blade performs grinding and load distribution, it is difficult to cut into a semiconductor polishing cloth and increase the grinding efficiency, It was difficult to increase the WRR of the semiconductor polishing cloth and suppress the PWR. On the other hand, in the present invention, the first and second cutting blades having different heights are formed so as to share grinding processing and load distribution, respectively, so that the WRR of the semiconductor polishing cloth to be ground is increased and the PWR is increased. Is suppressed. In addition, by distributing the load to the first cutting edge having a low height in this way, for example, compared to the case where the load is distributed in a portion other than the cutting edge on the surface of the substrate, the grinding efficiency is greatly increased. ing.

また、本発明に係る半導体研磨布用コンディショナーにおいて、前記第２切刃の数が、前記切刃の全数に対して１％〜２０％の範囲内に設定されていることとしてもよい。   Moreover, in the conditioner for semiconductor polishing cloth according to the present invention, the number of the second cutting blades may be set in a range of 1% to 20% with respect to the total number of the cutting blades.

本発明に係る半導体研磨布用コンディショナーによれば、基板の表面から突出する高さが第１切刃よりも高い第２切刃の数が、切刃全数の１％〜２０％の範囲内に設定されているので、第２切刃が確実に半導体研磨布に切り込んで研削する。すなわち、第２切刃の数が切刃全数の２０％を超えて設定された場合には、第２切刃が半導体研磨布に押し付けられて生じた荷重を受けやすくなるとともに、第１切刃が半導体研磨布に押し当てられにくくなって、研削効率を高めにくくなる。また、第２切刃の数が切刃全数の１％よりも少なく設定された場合には、第２切刃を用いて半導体研磨布を充分に切り込むことが難しくなる。従って、第２切刃の数が上記範囲内とされることで、研削効率がより確実に高められている。   According to the conditioner for a semiconductor polishing cloth according to the present invention, the number of second cutting blades whose height protruding from the surface of the substrate is higher than the first cutting blade is within a range of 1% to 20% of the total number of cutting blades. Since it is set, the second cutting edge surely cuts into the semiconductor polishing cloth for grinding. That is, when the number of second cutting blades is set to exceed 20% of the total number of cutting blades, the second cutting blade is easily pressed against the semiconductor polishing cloth, and the first cutting blade is easily affected. Becomes difficult to be pressed against the semiconductor polishing cloth, and it becomes difficult to increase the grinding efficiency. If the number of second cutting edges is set to be less than 1% of the total number of cutting edges, it becomes difficult to sufficiently cut the semiconductor polishing cloth using the second cutting edges. Therefore, the grinding efficiency is more reliably increased by setting the number of second cutting edges within the above range.

また、本発明に係る半導体研磨布用コンディショナーにおいて、前記第２切刃の前記高さが、前記第１切刃の前記高さの１５０％〜３００％の範囲内に設定されていることとしてもよい。   In the conditioner for a semiconductor polishing cloth according to the present invention, the height of the second cutting edge may be set within a range of 150% to 300% of the height of the first cutting edge. Good.

本発明に係る半導体研磨布用コンディショナーによれば、第２切刃の前記高さが、第１切刃の前記高さの１５０％〜３００％の範囲内に設定されているので、第２切刃が確実に半導体研磨布を切り込んでいき、第１切刃が、半導体研磨布に押し付けられて生じた荷重を確実に受けて分散させる。すなわち、第２切刃の前記高さが第１切刃の前記高さの１５０％よりも低く設定された場合には、第２切刃が半導体研磨布に比較的浅く切り込むこととなり、研削効率を高めにくくなる。また、第２切刃の前記高さが第１切刃の前記高さの３００％を超えて設定された場合には、第２切刃が半導体研磨布に押し付けられて生じた荷重を受けやすくなるとともに、第１切刃が半導体研磨布に押し当てられにくくなって、研削効率を高めにくくなる。従って、第２切刃の前記高さが上記範囲内とされることで、研削効率がさらに確実に高められる。   According to the conditioner for a semiconductor polishing cloth according to the present invention, the height of the second cutting blade is set within a range of 150% to 300% of the height of the first cutting blade. The blade reliably cuts the semiconductor polishing cloth, and the first cutting blade reliably receives and disperses the load generated by being pressed against the semiconductor polishing cloth. That is, when the height of the second cutting edge is set lower than 150% of the height of the first cutting edge, the second cutting edge cuts relatively shallowly into the semiconductor polishing cloth, and the grinding efficiency It becomes difficult to raise. In addition, when the height of the second cutting edge is set to exceed 300% of the height of the first cutting edge, the second cutting edge is easily subjected to a load generated by being pressed against the semiconductor polishing cloth. At the same time, the first cutting edge is hardly pressed against the semiconductor polishing cloth, and it becomes difficult to increase the grinding efficiency. Therefore, the efficiency of grinding is further reliably increased by setting the height of the second cutting edge within the above range.

また、本発明は、前述の半導体研磨布用コンディショナーの製造方法であって、前記基板の表面に、該表面から突出する突起部を形成する工程と、前記突起部をレーザ加工して前記第２切刃の刃先を形成するとともに、前記基板の表面をレーザ加工して前記第２切刃の刃先以外の部分及び第１切刃を形成する工程と、前記基板の表面、前記第１切刃及び前記第２切刃にダイヤモンド膜を形成する工程と、を備えることを特徴とする。   The present invention also relates to a method for manufacturing a conditioner for a semiconductor polishing cloth as described above, the step of forming a protrusion protruding from the surface on the surface of the substrate, and the second processing by laser processing the protrusion. Forming a cutting edge of the cutting edge, laser processing the surface of the substrate to form a portion other than the cutting edge of the second cutting edge and the first cutting edge, a surface of the substrate, the first cutting edge, and Forming a diamond film on the second cutting edge.

本発明に係る半導体研磨布用コンディショナーの製造方法によれば、基板の表面から突出する高さが互いに異なる第１切刃及び第２切刃を比較的容易に形成することができる。また、第１切刃及び第２切刃の前記高さを夫々精度よく設定できる。また、このように形成された第１、第２切刃及び基板の表面をダイヤモンド膜で被覆するので、第１、第２切刃の強度が充分に確保され、工具寿命が延長する。   According to the method for manufacturing a conditioner for a semiconductor polishing cloth according to the present invention, it is possible to relatively easily form the first cutting blade and the second cutting blade having different heights protruding from the surface of the substrate. Further, the heights of the first cutting edge and the second cutting edge can be set with high accuracy. Further, since the surfaces of the first and second cutting edges and the substrate thus formed are covered with a diamond film, the strength of the first and second cutting edges is sufficiently ensured and the tool life is extended.

本発明に係る半導体研磨布用コンディショナーによれば、切刃の研削効率が高められるとともに、工具寿命が長期に亘り安定して確保される。
また、本発明に係る半導体研磨布用コンディショナーの製造方法によれば、このような半導体研磨布用コンディショナーを比較的容易に製造することができる。 According to the conditioner for a semiconductor polishing cloth according to the present invention, the grinding efficiency of the cutting edge is increased and the tool life is stably ensured over a long period of time.
Moreover, according to the method for manufacturing a conditioner for a semiconductor polishing pad according to the present invention, such a conditioner for a semiconductor polishing pad can be manufactured relatively easily.

図１は本発明の一実施形態に係る半導体研磨布用コンディショナーを示す概略斜視図、図２は本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃を拡大して示す概略斜視図、図３は本発明の一実施形態に係る半導体研磨布用コンディショナーの製造手順を説明する図である。   FIG. 1 is a schematic perspective view showing a conditioner for a semiconductor polishing cloth according to an embodiment of the present invention. FIG. 2 is a schematic perspective view showing an enlarged cutting edge of the conditioner for a semiconductor polishing cloth according to an embodiment of the present invention. FIG. 3 is a view for explaining the manufacturing procedure of the conditioner for a semiconductor polishing pad according to one embodiment of the present invention.

図１に示すように、本実施形態の半導体研磨布用コンディショナー１０は、例えば炭化珪素（ＳｉＣ）等のセラミックス材料からなる円板状の基板１１を有している。また、基板１１の表面には、後述する切刃が複数形成されている。また、基板１１の前記表面とは反対側を向く面には、例えばステンレス等からなる円板状の台金（不図示）が接合される。   As shown in FIG. 1, a conditioner 10 for a semiconductor polishing cloth according to this embodiment includes a disk-shaped substrate 11 made of a ceramic material such as silicon carbide (SiC). Further, a plurality of cutting blades to be described later are formed on the surface of the substrate 11. Further, a disk-shaped base metal (not shown) made of, for example, stainless steel is joined to the surface of the substrate 11 facing away from the surface.

切刃は、基板１１の表面から突出して形成されており、例えば、多角柱状、多角錐状、円錐状又は切頭円錐状等に形成される。半導体研磨布用コンディショナー１０は、基板１１の表面に対向配置される半導体研磨布（不図示）に押し付けられ研削加工を施す際に、これらの切刃を半導体研磨布に切り込んでいく。また、切刃は、基板１１の表面から突出する高さが互いに異なる夫々複数の第１切刃１及び第２切刃２を有している。   The cutting blade is formed so as to protrude from the surface of the substrate 11, and is formed in, for example, a polygonal column shape, a polygonal pyramid shape, a conical shape, or a truncated conical shape. When the semiconductor polishing cloth conditioner 10 is pressed against a semiconductor polishing cloth (not shown) disposed opposite to the surface of the substrate 11 and performs grinding, these cutting blades are cut into the semiconductor polishing cloth. Further, the cutting blade has a plurality of first cutting blades 1 and second cutting blades 2 having different heights protruding from the surface of the substrate 11.

図２に示すように、本実施形態では、第１切刃１は横置きされた三角柱状に形成されており、基板１１の表面に対し傾斜する頂面１Ａと、この頂面１Ａの周囲に交差して連なり該頂面１Ａと前記表面とを繋ぎ前記表面に垂直な複数の壁面１Ｂとを備えている。また、第２切刃２は四角柱状又は横置きされた台形柱状に形成されており、基板１１の表面に対し傾斜する頂面２Ａと、この頂面２Ａの周囲に交差して連なり該頂面２Ａと前記表面とを繋ぎ前記表面に垂直な複数の壁面２Ｂとを備えている。   As shown in FIG. 2, in the present embodiment, the first cutting edge 1 is formed in a horizontally arranged triangular prism shape, and a top surface 1 </ b> A that is inclined with respect to the surface of the substrate 11 and the periphery of the top surface 1 </ b> A. A plurality of wall surfaces 1B perpendicular to the surface are provided so as to cross each other and connect the top surface 1A and the surface. In addition, the second cutting edge 2 is formed in a square columnar shape or a trapezoidal columnar shape that is horizontally disposed, and a top surface 2A that is inclined with respect to the surface of the substrate 11 and the periphery of the top surface 2A are crossed and connected to each other. 2A and a plurality of wall surfaces 2B perpendicular to the surface are provided.

また、これらの第１、第２切刃１，２の幅Ｗは夫々３０μｍ程度に設定され、奥行きＤは夫々３０μｍ程度に設定されている。また、第１、第２切刃１，２の、基板１１の表面とは反対側を向く先端（刃先）において、頂面１Ａ，２Ａと壁面１Ｂ，２Ｂとがなす刃先角θは、夫々４５°程度に設定されている。   Further, the width W of each of the first and second cutting edges 1 and 2 is set to about 30 μm, and the depth D is set to about 30 μm. In addition, at the tips (blade edges) of the first and second cutting edges 1 and 2 facing away from the surface of the substrate 11, the edge angles θ formed by the top surfaces 1A and 2A and the wall surfaces 1B and 2B are 45 respectively. It is set to about °.

また、第２切刃２は、その基板１１の表面から突出する高さＨ２が、第１切刃１の前記表面から突出する高さＨ１よりも高く設定されている。詳しくは、第２切刃２の高さＨ２は、第１切刃１の高さＨ１の１５０％〜３００％の範囲内に設定されている。また、第２切刃２の数は、切刃の全数（すなわち第１切刃１及び第２切刃２の和）に対して１％〜２０％の範囲内に設定されている。尚、複数の第１切刃１の高さＨ１同士、及び、複数の第２切刃２の高さＨ２同士は、夫々互いに略等しくされている。   Further, the second cutting edge 2 is set such that the height H2 protruding from the surface of the substrate 11 is higher than the height H1 protruding from the surface of the first cutting edge 1. Specifically, the height H2 of the second cutting edge 2 is set within a range of 150% to 300% of the height H1 of the first cutting edge 1. The number of second cutting edges 2 is set within a range of 1% to 20% with respect to the total number of cutting edges (that is, the sum of the first cutting edges 1 and the second cutting edges 2). The heights H1 of the plurality of first cutting edges 1 and the heights H2 of the plurality of second cutting edges 2 are substantially equal to each other.

また、図１に示すように、第２切刃２は、基板１１の表面において周方向に互いに間隔を開け配置されている。尚、第２切刃２は、前記表面において径方向に互いに間隔を開け配置されていることとしてもよく、周方向及び径方向に互いに間隔を開け配置されていてもよい。図示の例では、第２切刃２は基板１１の表面の周縁に略等間隔を開けて複数（４つ）配置されている。
また、基板１１の表面において、第２切刃２が形成されている部分以外の部分には、第１切刃１が周方向及び径方向に互いに間隔を開け配置されている。図示の例では、第１切刃１同士の間隔は、第２切刃２同士の間隔より小さくされている。 Further, as shown in FIG. 1, the second cutting blades 2 are arranged on the surface of the substrate 11 so as to be spaced apart from each other in the circumferential direction. In addition, the 2nd cutting blade 2 is good also as being mutually arrange | positioned in the radial direction on the said surface, and may be arrange | positioned mutually spaced in the circumferential direction and radial direction. In the illustrated example, a plurality (four) of the second cutting blades 2 are arranged at substantially equal intervals around the periphery of the surface of the substrate 11.
Further, on the surface of the substrate 11, the first cutting blades 1 are arranged at intervals in the circumferential direction and the radial direction at portions other than the portion where the second cutting blade 2 is formed. In the illustrated example, the interval between the first cutting blades 1 is smaller than the interval between the second cutting blades 2.

また、基板１１の表面及び第１、第２切刃１，２は、ＣＶＤ法により形成された多結晶ダイヤモンドからなるダイヤモンド膜（不図示）で被覆されている。尚、本実施形態では、ダイヤモンド膜の膜厚は１０μｍ程度に設定されている。   The surface of the substrate 11 and the first and second cutting edges 1 and 2 are covered with a diamond film (not shown) made of polycrystalline diamond formed by a CVD method. In the present embodiment, the film thickness of the diamond film is set to about 10 μm.

次に、基板１１の表面に第１、第２切刃１，２を形成する手順について説明する。
まず、図３（ａ）に示すように、基板１１の表面に、該表面から突出する直方体状の突起部Ｐを複数形成する。突起部Ｐは、例えば、レーザ加工、プレス成形、機械加工、ブラスト加工等により形成される。 Next, a procedure for forming the first and second cutting edges 1 and 2 on the surface of the substrate 11 will be described.
First, as shown in FIG. 3A, a plurality of rectangular parallelepiped protrusions P protruding from the surface are formed on the surface of the substrate 11. The protrusion P is formed by, for example, laser processing, press molding, machining, blasting, or the like.

次いで、図３（ｂ）に示すように、レーザ光Ｌを照射し、突起部Ｐをレーザ加工して第２切刃２の刃先を形成するとともに、基板１１の表面をレーザ加工して第２切刃２の刃先以外の部分及び第１切刃１を形成する。このように、図３（ｃ）に示す第１切刃１及び第２切刃２が形成される。   Next, as shown in FIG. 3B, the laser beam L is irradiated, the projection P is laser processed to form the cutting edge of the second cutting edge 2, and the surface of the substrate 11 is laser processed to obtain the second. A part other than the cutting edge of the cutting edge 2 and the first cutting edge 1 are formed. Thus, the 1st cutting blade 1 and the 2nd cutting blade 2 which are shown in FIG.3 (c) are formed.

また、第１、第２切刃１，２を形成した後、ＣＶＤ法を用いて基板１１の表面及び第１、第２切刃１，２をダイヤモンド膜で被覆する。
このようにして、半導体研磨布用コンディショナー１０が製造される。 After the first and second cutting edges 1 and 2 are formed, the surface of the substrate 11 and the first and second cutting edges 1 and 2 are covered with a diamond film using a CVD method.
In this way, the semiconductor polishing cloth conditioner 10 is manufactured.

以上説明したように、本実施形態に係る半導体研磨布用コンディショナー１０によれば、基板１１の表面から突出する高さが互いに異なる第１切刃１及び第２切刃２を有しているので、半導体研磨布を研削する際、第１、第２切刃１，２のうち前記高さが高い第２切刃２が主として半導体研磨布に切り込んでいき、前記高さが低い第１切刃１が主として半導体研磨布に押し付けられて生じた荷重を受けて分散させる。   As described above, according to the conditioner 10 for a semiconductor polishing cloth according to this embodiment, the first cutting edge 1 and the second cutting edge 2 that protrude from the surface of the substrate 11 are different from each other. When grinding the semiconductor polishing cloth, the first cutting edge 1 and the second cutting edge 1 of the first and second cutting edges 1 and 2 are mainly cut into the semiconductor polishing cloth, and the first cutting edge is low. 1 is mainly subjected to a load generated by being pressed against a semiconductor polishing cloth and dispersed.

すなわち、従来のように、前記高さが同じ複数の切刃を用いた場合には、切刃全体が研削加工及び荷重分散を行うため、半導体研磨布に切り込んで研削効率を高めることが難しく、半導体研磨布のＷＲＲを高めＰＷＲを抑制することが難しかった。一方、本実施形態の半導体研磨布用コンディショナー１０では、前記高さが異なる第１、第２切刃１，２が、研削加工と荷重分散とを夫々分担するように形成されているので、研削する半導体研磨布のＷＲＲが高められるとともにＰＷＲが抑制される。また、このように前記高さの低い第１切刃１に荷重分散させることで、例えば、基板１１の表面の切刃以外の部分において荷重分散させる場合に対比して、研削効率が大幅に高められている。   That is, as in the past, when using a plurality of cutting blades having the same height, since the entire cutting blade performs grinding and load distribution, it is difficult to cut into a semiconductor polishing cloth and increase the grinding efficiency, It was difficult to increase the WRR of the semiconductor polishing cloth and suppress the PWR. On the other hand, in the semiconductor polishing pad conditioner 10 of the present embodiment, the first and second cutting edges 1 and 2 having different heights are formed so as to share grinding and load distribution, respectively. The WRR of the semiconductor polishing cloth to be increased is increased and the PWR is suppressed. In addition, by distributing the load to the first cutting blade 1 having the low height in this way, for example, compared with the case where the load is distributed in a portion other than the cutting blade on the surface of the substrate 11, the grinding efficiency is significantly increased. It has been.

また、前記高さが第１切刃１よりも高い第２切刃２の数が、切刃全数の１％〜２０％の範囲内に設定されているので、第２切刃２が確実に半導体研磨布に切り込んで研削する。すなわち、第２切刃２の数が切刃全数の２０％を超えて設定された場合、第２切刃２が半導体研磨布に押し付けられて生じた荷重を受けやすくなるとともに、第１切刃１が半導体研磨布に押し当てられにくくなって、研削効率を高めにくくなる。また、第２切刃２の数が切刃全数の１％よりも少なく設定された場合、第２切刃２を用いて半導体研磨布を充分に切り込むことが難しくなる。従って、第２切刃２の数が上記範囲内とされることで、研削効率がより確実に高められる。   Moreover, since the number of the 2nd cutting blades 2 whose height is higher than the 1st cutting blade 1 is set in the range of 1%-20% of the total number of cutting blades, the 2nd cutting blade 2 reliably Cut into a semiconductor polishing cloth and grind. That is, when the number of the second cutting blades 2 is set to exceed 20% of the total number of cutting blades, the second cutting blade 2 is likely to receive a load generated by being pressed against the semiconductor polishing cloth, and the first cutting blade 1 becomes difficult to be pressed against the semiconductor polishing cloth, and it becomes difficult to increase the grinding efficiency. Further, when the number of second cutting edges 2 is set to be less than 1% of the total number of cutting edges, it becomes difficult to sufficiently cut the semiconductor polishing cloth using the second cutting edges 2. Therefore, grinding efficiency is more reliably improved by making the number of the 2nd cutting blades 2 into the said range.

また、第２切刃２の前記高さが、第１切刃１の前記高さの１５０％〜３００％の範囲内に設定されているので、第２切刃２が確実に半導体研磨布を切り込んでいき、第１切刃１が、半導体研磨布に押し付けられて生じた荷重を確実に受けて分散させる。すなわち、第２切刃２の前記高さが第１切刃１の前記高さの１５０％よりも低く設定された場合、第２切刃２が半導体研磨布に比較的浅く切り込むこととなり、研削効率を高めにくくなる。また、第２切刃２の前記高さが第１切刃１の前記高さの３００％を超えて設定された場合、第２切刃２が半導体研磨布に押し付けられて生じた荷重を受けやすくなるとともに、第１切刃１が半導体研磨布に押し当てられにくくなって、研削効率を高めにくくなる。従って、第２切刃２の前記高さが上記範囲内とされることで、研削効率がさらに確実に高められる。   In addition, since the height of the second cutting edge 2 is set within a range of 150% to 300% of the height of the first cutting edge 1, the second cutting edge 2 is surely attached to the semiconductor polishing cloth. The first cutting blade 1 reliably receives and disperses the load generated by being pressed against the semiconductor polishing cloth. That is, when the height of the second cutting edge 2 is set to be lower than 150% of the height of the first cutting edge 1, the second cutting edge 2 cuts relatively shallowly into the semiconductor polishing cloth, and grinding is performed. It becomes difficult to increase efficiency. When the height of the second cutting edge 2 is set to exceed 300% of the height of the first cutting edge 1, the second cutting edge 2 receives a load generated by being pressed against the semiconductor polishing cloth. While becoming easy, it becomes difficult to press the 1st cutting blade 1 against a semiconductor polishing cloth, and it becomes difficult to improve grinding efficiency. Therefore, when the height of the second cutting edge 2 is within the above range, the grinding efficiency can be further increased.

また、本実施形態の半導体研磨布用コンディショナー１０の製造方法によれば、前記高さが互いに異なる第１切刃１及び第２切刃２を比較的容易に形成することができる。また、第１切刃１及び第２切刃２の前記高さを夫々精度よく設定できる。また、このように形成された第１、第２切刃１，２及び基板１１の表面をダイヤモンド膜で被覆するので、第１、第２切刃１，２の強度が充分に確保され、工具寿命が延長する。   Moreover, according to the manufacturing method of the conditioner 10 for semiconductor polishing cloth of this embodiment, the 1st cutting blade 1 and the 2nd cutting blade 2 from which the said height mutually differ can be formed comparatively easily. Moreover, the said height of the 1st cutting blade 1 and the 2nd cutting blade 2 can be set accurately, respectively. In addition, since the surfaces of the first and second cutting edges 1 and 2 and the substrate 11 formed in this way are covered with a diamond film, the strength of the first and second cutting edges 1 and 2 is sufficiently secured, and the tool The service life is extended.

尚、本発明は前述の実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。
例えば、本実施形態では、第１切刃１が三角柱状に形成され、第２切刃２が四角柱状又は台形柱状に形成されていることとして説明したが、これらに限定されるものではない。また、図２に示した第１、第２切刃１，２は概略図であり、実際には厳密な三角柱状、四角柱状又は台形柱状に形成されずに多少変形していてもよい。
また、第１、第２切刃１，２の幅Ｗ、奥行きＤ、刃先角θ等の説明で示した具体的数値は一例であり、本実施形態に限定されるものではない。 The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
For example, in the present embodiment, it has been described that the first cutting edge 1 is formed in a triangular prism shape, and the second cutting edge 2 is formed in a quadrangular column shape or a trapezoidal column shape, but is not limited thereto. Further, the first and second cutting edges 1 and 2 shown in FIG. 2 are schematic views, and may actually be slightly deformed without being formed into a strict triangular column shape, a quadrangular column shape, or a trapezoid column shape.
In addition, the specific numerical values shown in the description of the width W, the depth D, the blade edge angle θ, and the like of the first and second cutting blades 1 and 2 are examples, and are not limited to the present embodiment.

また、本実施形態では、ダイヤモンド膜の膜厚が１０μｍ程度に形成されることとして説明したが、これに限定されるものではない。ただし、前記膜厚が、１μｍ〜３０μｍの範囲内に設定されていることが好ましい。   In the present embodiment, the diamond film has been described as having a thickness of about 10 μm. However, the present invention is not limited to this. However, it is preferable that the film thickness is set within a range of 1 μm to 30 μm.

また、第２切刃２の高さＨ２は、第１切刃１の高さＨ１の１５０％〜３００％の範囲内に設定されることが望ましいが、これに限定されるものではなく、また、互いに同一の高さに設定されていなくとも構わない。   Further, the height H2 of the second cutting edge 2 is desirably set within a range of 150% to 300% of the height H1 of the first cutting edge 1, but is not limited to this. The heights may not be the same.

また、本実施形態では、第１、第２切刃１，２が基板の表面に直接形成されていることとして説明したが、第１、第２切刃１，２は、基板から半導体研磨布側へ突出する円板状や多角形板状の台座部の表面に形成されていても構わない。   In the present embodiment, the first and second cutting edges 1 and 2 are described as being directly formed on the surface of the substrate. However, the first and second cutting edges 1 and 2 are formed from the substrate to the semiconductor polishing cloth. It may be formed on the surface of a pedestal portion that is a disk-like or polygonal plate-like projecting to the side.

以下、本発明を実施例により具体的に説明する。ただし本発明はこの実施例に限定されるものではない。   Hereinafter, the present invention will be specifically described by way of examples. However, the present invention is not limited to this embodiment.

[実施例１]
実施例１として、直径φ１００ｍｍのＳｉＣからなる基板１１を用い、基板１１の表面に、図２に示す第１、第２切刃１，２を形成した。第１、第２切刃１，２は、幅Ｗ＝３０μｍ、奥行きＤ＝３０μｍ、刃先角θ＝４５°に夫々形成し、第１切刃１の高さＨ１＝４２μｍ、第２切刃２の高さＨ２＝Ｈ１×１４０％≒５９μｍとした。また、第２切刃２の数が、切刃全数の０．９％、１％、５％、１０％、１５％、２０％、２１％に設定された基板１１を夫々用意した。尚、第１、第２切刃１，２の全数は、１０８００個に設定した。 [Example 1]
As Example 1, a substrate 11 made of SiC having a diameter of 100 mm was used, and the first and second cutting edges 1 and 2 shown in FIG. The first and second cutting edges 1 and 2 are respectively formed to have a width W = 30 μm, a depth D = 30 μm, and a cutting edge angle θ = 45 °, and the height H1 of the first cutting edge 1 = 42 μm, the second cutting edge 2 Height H2 = H1 × 140% ≈59 μm. Moreover, the board | substrate 11 by which the number of the 2nd cutting blade 2 was set to 0.9%, 1%, 5%, 10%, 15%, 20%, 21% of the total number of cutting blades was prepared, respectively. The total number of the first and second cutting edges 1 and 2 was set to 10800.

また、これらの基板１１の表面及び第１、第２切刃１，２をダイヤモンド膜で被覆して、半導体研磨布用コンディショナー１０を夫々形成した。尚、ダイヤモンド膜は、気相合成法熱フィラメント炉を用いたＣＶＤ法によって、原料ガス（流速）：Ｈ２（１０００ｍｌ／ｍ）、ＣＨ４（２０ｍｌ／ｍ）、チャンバー圧：２５Ｔｏｒｒ、フィラメント温度：２２００℃、電圧：１８０Ｖ、合成速度：１．０μｍ／ｈの条件下で成膜し、膜厚を１０μｍに形成した。 Moreover, the conditioner 10 for semiconductor polishing cloths was formed by covering the surface of the substrate 11 and the first and second cutting edges 1 and 2 with a diamond film, respectively. Incidentally, the diamond film, by a CVD method using a vapor-phase synthesis method hot filament reactor, the raw material gas (flow rate): H 2 (1000ml / m ), CH 4 (20ml / m), chamber pressure: 25 Torr, the filament temperature: The film was formed under the conditions of 2200 ° C., voltage: 180 V, and synthesis rate: 1.0 μm / h, and the film thickness was formed to 10 μm.

このように製造した半導体研磨布用コンディショナー１０を半導体研磨装置に取り付け、半導体研磨布（パッド）を用いてウェーハの研磨加工を行い、ＷＲＲ及びＰＷＲを夫々測定した。尚、ウェーハの研磨加工は、パッド：ニッタハース社製ＩＣ１０００、ウェーハ荷重：３５ｋＰａ、半導体研磨布用コンディショナー荷重：６ポンド、スラリー：キャボット社製ＳＳ２５、の条件下で行った。また、ＷＲＲ及びＰＷＲの測定は、ウェーハＰの研磨処理枚数（以下「Ｒｕｎ」）が１Ｒｕｎ（初期）、８００Ｒｕｎ（２４時間研磨相当）に達した時点で夫々行った。   The thus prepared semiconductor polishing cloth conditioner 10 was attached to a semiconductor polishing apparatus, the wafer was polished using a semiconductor polishing cloth (pad), and WRR and PWR were measured respectively. Wafer polishing was performed under the conditions of pad: IC1000 manufactured by Nitta Haas, wafer load: 35 kPa, conditioner load for semiconductor polishing cloth: 6 pounds, and slurry: SS25 manufactured by Cabot. WRR and PWR were measured when the number of polished wafers P (hereinafter “Run”) reached 1 Run (initial) and 800 Run (equivalent to 24-hour polishing), respectively.

[実施例２]
実施例２として、第２切刃２の高さＨ２＝Ｈ１×１５０％＝６３μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 2]
As Example 2, the height H2 of the second cutting edge 2 was set to H1 × 150% = 63 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[実施例３]
実施例３として、第２切刃２の高さＨ２＝Ｈ１×２００％＝８４μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 3]
As Example 3, the height H2 of the second cutting edge 2 was set to H1 × 200% = 84 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[実施例４]
実施例４として、第２切刃２の高さＨ２＝Ｈ１×３００％＝１２６μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 4]
As Example 4, the height H2 of the second cutting edge 2 was set to H1 × 300% = 126 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[実施例５]
実施例５として、第２切刃２の高さＨ２＝Ｈ１×３１０％≒１３０μｍとした。それ以外は、実施例１と同様の条件として測定を行った。 [Example 5]
In Example 5, the height H2 of the second cutting edge 2 was set to H1 × 310% ≈130 μm. Other than that, the measurement was performed under the same conditions as in Example 1.

[比較例]
また、比較例として、第１、第２切刃１，２の前記高さが同一（すなわち切刃が一種類のみ）とされた基板１１を用意した。また、切刃の前記高さを、１０μｍ、２０μｍ、３０μｍ、５０μｍ、７０μｍとした基板１１を夫々用意した。それ以外は、実施例１と同様の条件として測定を行った。 [Comparative example]
Moreover, the board | substrate 11 by which the said height of the 1st, 2nd cutting blades 1 and 2 was the same (namely, only one kind of cutting blade) was prepared as a comparative example. Moreover, the board | substrate 11 which made the said height of a cutting blade 10 micrometers, 20 micrometers, 30 micrometers, 50 micrometers, and 70 micrometers was prepared, respectively. Other than that, the measurement was performed under the same conditions as in Example 1.

Figure 2010125586
Figure 2010125586

表１に示す通り、実施例１〜５においては、比較例に比べＷＲＲの安定性が改善されており、また初期（１Ｒｕｎ）からＷＲＲが充分に確保されることがわかった。また、実施例２〜４においては、ＷＲＲが全て２０００Å／分以上に確保されており、研削性能が大幅に高められていることが確認された。
また、実施例１〜５においては、ＷＲＲを改善しつつ、ＰＷＲも実用可能なレベルであることがわかった。 As shown in Table 1, in Examples 1 to 5, it was found that the stability of WRR was improved compared to the comparative example, and that WRR was sufficiently secured from the initial stage (1 Run). Moreover, in Examples 2-4, WRR was all ensured at 2000 kg / min or more, and it was confirmed that the grinding performance is improved significantly.
Moreover, in Examples 1-5, it turned out that PWR is also a practical level while improving WRR.

本発明の一実施形態に係る半導体研磨布用コンディショナーを示す概略斜視図である。It is a schematic perspective view which shows the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの切刃を拡大して示す概略斜視図である。It is a schematic perspective view which expands and shows the cutting blade of the conditioner for semiconductor polishing cloth which concerns on one Embodiment of this invention. 本発明の一実施形態に係る半導体研磨布用コンディショナーの製造手順を説明する図である。It is a figure explaining the manufacture procedure of the conditioner for semiconductor polishing cloth concerning one embodiment of the present invention.

符号の説明Explanation of symbols

１ 第１切刃
２ 第２切刃
１０ 半導体研磨布用コンディショナー
１１ 基板
Ｈ１ 第１切刃が基板の表面から突出する高さ
Ｈ２ 第２切刃が基板の表面から突出する高さ
Ｌ レーザ光
Ｐ 突起部 DESCRIPTION OF SYMBOLS 1 First cutting blade 2 Second cutting blade 10 Conditioner for semiconductor polishing cloth 11 Substrate H1 Height at which the first cutting blade protrudes from the surface of the substrate H2 Height at which the second cutting blade protrudes from the surface of the substrate L Laser light P protrusion

Claims (4)

基板の表面から突出する複数の切刃を用いて、前記基板に対向配置された半導体研磨布に研削加工を施す半導体研磨布用コンディショナーであって、
前記基板の表面及び前記切刃が、ダイヤモンド膜で被覆されており、
前記切刃は、第１切刃と、前記基板の表面から突出する高さが前記第１切刃よりも高く形成された第２切刃とを有することを特徴とする半導体研磨布用コンディショナー。 A conditioner for a semiconductor polishing cloth that uses a plurality of cutting blades protruding from the surface of the substrate to grind the semiconductor polishing cloth disposed opposite to the substrate,
The surface of the substrate and the cutting edge are covered with a diamond film,
The conditioner for a semiconductor polishing cloth, wherein the cutting edge includes a first cutting edge and a second cutting edge formed so that a height protruding from the surface of the substrate is higher than the first cutting edge. 請求項１に記載の半導体研磨布用コンディショナーであって、
前記第２切刃の数が、前記切刃の全数に対して１％〜２０％の範囲内に設定されていることを特徴とする半導体研磨布用コンディショナー。 A conditioner for a semiconductor polishing cloth according to claim 1,
The conditioner for a semiconductor polishing cloth, wherein the number of the second cutting blades is set in a range of 1% to 20% with respect to the total number of the cutting blades. 請求項１又は２に記載の半導体研磨布用コンディショナーであって、
前記第２切刃の前記高さが、前記第１切刃の前記高さの１５０％〜３００％の範囲内に設定されていることを特徴とする半導体研磨布用コンディショナー。 A conditioner for a semiconductor polishing cloth according to claim 1 or 2,
The conditioner for a semiconductor polishing cloth, wherein the height of the second cutting edge is set in a range of 150% to 300% of the height of the first cutting edge. 請求項１〜３のいずれか一項に記載の半導体研磨布用コンディショナーの製造方法であって、
前記基板の表面に、該表面から突出する突起部を形成する工程と、
前記突起部をレーザ加工して前記第２切刃の刃先を形成するとともに、前記基板の表面をレーザ加工して前記第２切刃の刃先以外の部分及び第１切刃を形成する工程と、
前記基板の表面、前記第１切刃及び前記第２切刃にダイヤモンド膜を形成する工程と、を備えることを特徴とする半導体研磨布用コンディショナーの製造方法。 It is a manufacturing method of the conditioner for semiconductor polishing cloths as described in any one of Claims 1-3,
Forming a protrusion projecting from the surface of the substrate;
Forming the cutting edge of the second cutting edge by laser processing the protrusion, and forming a portion other than the cutting edge of the second cutting edge and the first cutting edge by laser processing the surface of the substrate;
Forming a diamond film on the surface of the substrate, the first cutting edge, and the second cutting edge, and a method for manufacturing a conditioner for a semiconductor polishing cloth.
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Cited By (2)

* Cited by examiner, † Cited by third party
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CN104136171A (en) * 2011-12-16 2014-11-05 六号元素技术有限公司 Method of dressing an abrasive wheel using a polycrystalline cvd synthetic diamond dresser and method of fabricating the same
CN104684686A (en) * 2012-08-02 2015-06-03 3M创新有限公司 Abrasive elements with precisely shaped features, abrasive articles fabricated therefrom and methods of making thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104136171A (en) * 2011-12-16 2014-11-05 六号元素技术有限公司 Method of dressing an abrasive wheel using a polycrystalline cvd synthetic diamond dresser and method of fabricating the same
JP2015504786A (en) * 2011-12-16 2015-02-16 エレメント シックス テクノロジーズ リミテッド Polishing wheel dressing method using polycrystalline CVD synthetic diamond wheel dresser and manufacturing method of polycrystalline CVD synthetic diamond wheel dresser
CN104136171B (en) * 2011-12-16 2016-12-28 六号元素技术有限公司 Polycrystal CVD diamond synthesis finishing machine is used to repair the method for emery wheel and manufacture its method
CN104684686A (en) * 2012-08-02 2015-06-03 3M创新有限公司 Abrasive elements with precisely shaped features, abrasive articles fabricated therefrom and methods of making thereof
JP2015530265A (en) * 2012-08-02 2015-10-15 スリーエム イノベイティブ プロパティズ カンパニー Abrasive element having precisely formed forming part, abrasive article manufactured from the abrasive element, and method for producing them
JP2019063989A (en) * 2012-08-02 2019-04-25 スリーエム イノベイティブ プロパティズ カンパニー Abrasive elements with precisely shaped features, abrasive articles fabricated from those abrasive elements, and methods of making the same

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