US20150290768A1

US20150290768A1 - Chemical mechanical polishing conditioner capable of controlling polishing depth

Info

Publication number: US20150290768A1
Application number: US14/676,953
Authority: US
Inventors: Jui-Lin Chou; Chia-Chun Wang; Chia-Feng CHIU; Chung-Yi Cheng
Original assignee: Kinik Co
Current assignee: Kinik Co
Priority date: 2014-04-11
Filing date: 2015-04-02
Publication date: 2015-10-15
Also published as: TW201538277A; TWI546159B

Abstract

Provided is a chemical mechanical polishing conditioner capable of controlling a polishing depth. The CMP conditioner capable of controlling the polishing depth comprises a substrate; a binding layer disposed on the substrate; multiple abrasive units placed on the binding layer; and multiple abrasive terminal units placed on the binding layer. Each abrasive unit has an abrasive unit substrate and an abrasive layer, and the abrasive layer is a diamond film formed by chemical vapor deposition and has multiple abrasive tips. The abrasive tips of the abrasive units are relatively higher than surfaces of the abrasive terminal units to form a protrusion height. Accordingly, the CMP conditioner controls the polishing depth of an article to be conditioned.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention
The present invention relates to a chemical mechanical polishing conditioner capable of controlling polishing depth, especially to a combinational chemical mechanical polishing conditioner capable of controlling polishing depth.
2. Description of the Prior Art(s)
Chemical Mechanical Polishing (abbreviated as CMP) is commonly used in various industries to polish the surfaces of various articles made of ceramic, silicon, glass, quartz, or metal. With the applicability of large-scaled planarization of integrated semiconductor device, CMP becomes a common planarization technique in the semiconductor process.
During the CMP process of the semiconductor, a pad is contacted with a wafer or other semiconductor elements in conjunction with suitable abrasive slurry to remove impurities or protruding structures on the surface of the wafer through both chemical reaction and mechanical force. When the pad has been used for a period of time, polishing debris produced from the CMP process will accumulate and stagnate on the surface of the pad, thereby reducing the polishing effect and efficiency. Therefore, a chemical mechanical polishing conditioner can be used to dress the surface of the pad for the desired polishing effect and efficiency.
In the preparation of a chemical mechanical polishing conditioner (abbreviated as CMP conditioner), multiple abrasive particles are mounted to a binding layer to form an abrasive layer. The abrasive layer is fixed to a surface of a substrate by brazing or sintering. Said CMP conditioner is suitable for dressing the pads; however, in more sophisticated semiconductor process with line-width below 45 nanometers, the rough surface of the pad that is too coarse will cause problems such as scratch, local over-polishing, depression, or non-uniform thickness of the wafer. As the line-width of integrated semiconductor device is decreasing, the demand for the surface planarization of the wafer is increasing, and same for the CMP conditioner.
Taiwan Patent No. 1228066 discloses a pad conditioner and a dressing method which provide a uniform abrasive surface. An abrasive surface 4 is mounted on the edge of a metal support 2 of the pad conditioner 1. Multiple abrasive particles of various sizes are mounted on the abrasive surface 4 to form a first abrasive particle group 5 and a second abrasive particle group 6. An adjustment article 7 is mounted on the metal support 2 for arbitrarily adjusting the height difference 6 between the front surfaces S1, S2 of the first abrasive particle group 5 and the second abrasive particle group 6. However, when the pad conditioner is applied to a pad, the pad conditioner cannot control a polishing depth of the pad.
Taiwan Patent Application Publication No. 201249595 discloses a pad conditioner for CMP comprising a substrate having a first set of protrusions and a second set of protrusions. The first set of the protrusions has a first average height and the second set of the protrusions has a second average height. The first average height and the second average height are different. The first set of the protrusions includes multiple protrusions each having non-flat surfaces on their tops, and so does the second set of the protrusions. A polycrystalline diamond layer is disposed on the non-flat surfaces of the first and second sets of the protrusions. The protrusions can be discriminated by their heights, predetermined positions, or dimensions of substrates. This prior invention provides various ways to measure the height of the protrusions including an average height, a peak-to-valley height, or a protruding height from a back side of the pad conditioner for CMP. However, the protrusions and the substrate are integrally formed, failing to form a totally planarized surface to improve the abrasion efficiency and prolong lifetime of the CMP conditioner.
A conventional CMP conditioner normally comprises multiple diamond particles attached on its substrate. Since the diamond particles are different from each other in height, the polishing depths of the diamond particles are also varied when the conventional CMP conditioner is applied to a pad.
To overcome the shortcomings, the present invention provides a CMP conditioner to mitigate or obviate the aforementioned problems.

SUMMARY OF THE INVENTION

The main objective of the present invention is to provide a CMP conditioner capable of controlling the polishing depth. By assembling the small abrasive units and abrasive terminal units onto the large substrate, the polishing depths are controlled by the users' needs or various polishing conditions to achieve required cutting ability and piercing uniformity.
To achieve the abovementioned objective, the present invention provides a CMP conditioner capable of controlling the polishing depth. The CMP conditioner capable of controlling the polishing depth comprises a substrate, a binding layer disposed on the substrate, multiple abrasive units placed on the binding layer, and multiple abrasive terminal units placed on the binding layer. Each abrasive unit has an abrasive layer and an abrasive unit substrate. The abrasive layer is a diamond film formed by chemical vapor deposition and has multiple abrasive tips. The abrasive tips of the abrasive units are relatively higher than surfaces of the abrasive terminal units. A protrusion height is between the abrasive units and the abrasive terminal units. When the CMP conditioner capable of controlling the polishing depth is applied to an abrasive article, a polishing depth of the abrasive article can be controlled by the protrusion height.
The abrasive units and the abrasive terminal units are arranged annularly. Besides, the abrasive units are arranged alternately with the abrasive terminal units. Preferably, the abrasive units are arranged alternately to the abrasive terminal units in an annular pattern to make the force of the abrasive units, which is acting on the abrasive article, uniformly distributed; therefore, the abrasion quality of the CMP conditioner capable of controlling the polishing depth can be improved and the lifetime of the CMP conditioner capable of controlling the polishing depth can be prolonged.
The abrasive units have a first tip height and a second tip height. The first tip height is different from the second tip height. A height difference between the first tip height and the second tip height is 5 micrometers to 100 micrometers, inclusive. Specifically, the height difference between the first tip height and the second tip height is 15 micrometers to 60 micrometers, inclusive. Preferably, the abrasive units have a third tip height and a fourth tip height. A height difference between the third tip height and the fourth tip height is 25 micrometers to 50 micrometers, inclusive.
The abrasive tips of the abrasive units are relatively higher than the surfaces of the abrasive terminal units by 5 micrometers to 100 micrometers, inclusive. Preferably, the abrasive tips of the abrasive units are relatively higher than the surfaces of the abrasive terminal units by 25 micrometers to 75 micrometers, inclusive. More preferably, the abrasive tips of the abrasive units are relatively higher than the surfaces of the abrasive terminal units by 30 micrometers to 60 micrometers, inclusive.
Preferably, heights of the abrasive units are equal, and a planarized surface of the CMP conditioner capable of controlling the polishing depth is formed by the abrasive units.
Shape of the abrasive tips can be customized by the users' needs or various polishing conditions. The abrasive tips are in the shape of, but not limited to, knife edges, cones, arcs, cylinders, pyramids, or prisms. Preferably, the abrasive tips are in the shape of pyramids. Alternatively, the abrasive tips are in the shape of prisms. Alternatively, the abrasive tips are cylindrical in shape.
Alignment directions or tip angles of the abrasive tips can be customized by the users' needs or various polishing conditions. The alignment directions of the abrasive tip are uniform, partially uniform, or different. Preferably, the abrasive tips are perpendicular to a pad. Alternatively, the abrasive tips are non-perpendicular to the pad.
The tip angles of the abrasive tips are equal, partially equal, or different. Preferably, the tip angles of the abrasive tips are 60 degrees, 90 degrees, or 120 degrees. Alternatively, the tip angles of some of the abrasive tips are 60 degrees and the tip angles of the other abrasive tips are 90 degrees.
Besides, horizontal distances between any two neighboring abrasive tips can be customized by the users' needs or various polishing conditions. The horizontal distances between any two neighboring abrasive tips are equal, partially equal, or different. Preferably, the horizontal distances between any two neighboring abrasive tips are 1.5 times, 2 times, or 3 times larger than an outer diameter of the abrasive tips. Alternatively, some of the horizontal distances between two neighboring abrasive tips are 2 times larger than the outer diameter of the abrasive tips and the other horizontal distances between two neighboring abrasive tips are 3 times larger than the outer diameter of the abrasive tips.
A thickness of the substrate, the thicknesses of the abrasive units, and the thicknesses of the abrasive terminal units can be customized by the users' needs or various polishing conditions. The thickness of the substrate ranges from 10 millimeters (abbreviated as mm) to 200 mm. Preferably, the thickness of the substrate ranges from 60 mm to 100 mm. More preferably, the thickness of the substrate is 80 mm. The thicknesses of the abrasive units are equal, partially equal, or different. Preferably, the thicknesses of the abrasive units range from 5 mm to 100 mm. More preferably, the thicknesses of the abrasive units range from 15 mm to 30 mm. More preferably, the thicknesses of the abrasive units are 20 mm. The thicknesses of the abrasive terminal units are equal, partially equal, or different. Preferably, the thicknesses of the abrasive terminal units range from 5 mm to 100 mm. More preferably, the thicknesses of the abrasive terminal units range from 15 mm to 30 mm. More preferably, the thicknesses of the abrasive terminal units are 20 mm.
Preferably, a middle layer is disposed between the abrasive layer and the abrasive unit substrate to improve the binding strength between the abrasive layer and the abrasive unit substrate. The middle layer is made of the group consisting of aluminum oxide, silicon carbide, and aluminum nitride. More preferably, the middle layer is made of silicon carbide.
The middle layer can be formed by, but not limited to, chemical vapor deposition, physical vapor deposition, soldering, or brazing.
The abrasive layer is made of monocrystalline diamond or polycrystalline diamond. Preferably, the abrasive layer is made of polycrystalline diamond, and a crystal dimension of the abrasive layer ranges from 5 nanometers to 50 micrometers, inclusive. More preferably, the crystal dimension of the abrasive layer ranges from 10 nanometers to 20 micrometers, inclusive.
The abrasive terminal units are made of an anti-abrasion material. The anti-abrasion material is, but is not limited to, a ceramic material or a polymeric material. Preferably, the abrasive terminal units are made of a ceramic material, and a crystal dimension of the ceramic material is 5 nanometers to 50 micrometers, inclusive. Alternatively, the crystal dimension of the ceramic material is 10 nanometers to 20 micrometers, inclusive.
The abrasive unit substrate is a conductive substrate or an insulating substrate. The conductive substrate is made of molybdenum, tungsten, or tungsten carbide. A patterned surface with multiple surface tips can be formed on the conductive substrate by electric discharge machining and the abrasive layers are successively formed on the surface tips by chemical vapor deposition to obtain the abrasive tips. Alternatively, a patterned surface with multiple surface tips can be formed on the insulating substrate by mechanical polishing or laser processing and the abrasive layers are successively formed on the surface tips by chemical vapor deposition to obtain the abrasive tips. Alternatively, a surface of the abrasive unit substrate is flat. The abrasive layer is deposited on the abrasive unit substrate by chemical vapor deposition and has the abrasive tips. The insulating substrate is made of a ceramic material or a monocrystalline material. Preferably, the ceramic material is silicon carbide. The monocrystalline material is silicon or aluminum oxide.
The binding layer can be customized by the users' needs or various polishing conditions. The binding layer is made of, but not limited to, a ceramic material, a brazing material, an electroplating material, a metallic material, or a polymeric material. Preferably, the binding layer is made of a brazing material. The brazing material is made of the group consisting of iron, cobalt, nickel, chromium, manganese, silicon, aluminum, and any combination thereof. Alternatively, the binding layer is made of a polymeric material. The polymeric material is epoxy resin, polyester resin, polyacrylate resin, or phenol resin.
A component or a dimension of the substrate can be customized by the users' needs or various polishing conditions. The substrate is a stainless steel substrate, a die steel substrate, a metal alloy substrate, a ceramic substrate, a plastic substrate, or any combination thereof. Preferably, the substrate is a stainless steel substrate.
Preferably, the substrate is a flat substrate or a notch substrate. More preferably, the substrate is the flat substrate. Alternatively, the substrate is the notch substrate.
The CMP conditioner capable of controlling the polishing depth is assembled by combining the small abrasive units and the small abrasive terminal units with the large substrate to control the polishing depths of the abrasive units to achieve required cutting ability and piercing uniformity.
Other objectives, advantages and novel features of the invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side view of a CMP conditioner capable of controlling the polishing depth in accordance with Embodiment 1 of the present invention;

FIG. 2 is a side view of a CMP conditioner capable of controlling the polishing depth in accordance with Embodiment 2 of the present invention;

FIG. 3 is a top view of the CMP conditioner capable of controlling the polishing depth in accordance with Embodiment 1 of the present invention;

FIG. 4 is a top view of the CMP conditioner capable of controlling the polishing depth in accordance with Embodiment 2 of the present invention;

FIG. 5A is a top view of an abrasive unit of the CMP conditioner capable of controlling the polishing depth in accordance with Embodiment 1 of the present invention;

FIG. 5B is a top view of an abrasive unit of a CMP conditioner capable of controlling the polishing depth in accordance with Embodiment 3 of the present invention; and

FIG. 5C is a top view of an abrasive unit of a CMP conditioner capable of controlling the polishing depth in accordance with Embodiment 4 of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiment 1

With reference to FIG. 1, the present invention provides a chemical mechanical polishing conditioner capable of controlling the polishing depth 1. The chemical mechanical polishing conditioner capable of controlling the polishing depth 1 comprises a substrate 10 made of stainless steel, a binding layer 11, multiple abrasive units 12, and multiple abrasive terminal units 15 made of silicon carbide. The substrate 10 is a flat substrate and has a thickness of 80 mm. The binding layer 11 is disposed on the substrate 10. Each abrasive unit 12 has an abrasive unit substrate 13 and an abrasive layer 14. The abrasive unit substrate 13 is a ceramic substrate made of silicon carbide. A surface of the abrasive unit substrate 13 is a flat surface. The abrasive layer 14 is successively formed on the surface tips by chemical vapor deposition and has multiple abrasive tips. The abrasive tips are in the shape of pyramids. Specifically, with reference to FIG. 5A, the abrasive tips are continuously arranged on the abrasive unit substrate 13 with an array pattern. The abrasive tips are in the shape of quadrangular pyramids. Alignment directions of the abrasive tips are uniform. Tip angles of the abrasive tips are equal. The abrasive tips of the abrasive units 12 are relatively higher than surfaces of the abrasive terminal units 15 by 5 micrometers to 100 micrometers, inclusive. The abrasive units 12 and the abrasive terminal units 15 are fixed on the substrate 10 through the binding layer 11. Thicknesses of the abrasive units 12 of the chemical mechanical polishing conditioner capable of controlling the polishing depth 1 are equal, i.e., the thickness of the binding layer 11 is fixed and the thicknesses of the abrasive unit substrates 13 are equal. A protrusion height is between the abrasive units 12 and the abrasive terminal units 15. When the chemical mechanical polishing conditioner 1 is applied to an abrasive article, a polishing depth of the abrasive article can be controlled by the protrusion height. With reference to FIG. 3, the abrasive units 12 and the abrasive terminal units 15 are on the substrate 10 and the binding layer 11. The abrasive units 12 are arranged alternately with the abrasive terminal units 15 in an annular pattern to make the force of the abrasive units 12 uniformly distributed; therefore, the abrasion quality of the chemical mechanical polishing conditioner capable of controlling the polishing depth 1 is improved and the lifetime of the chemical mechanical polishing conditioner capable of controlling the polishing depth 1 is prolonged.

Embodiment 2

With reference to FIG. 2, the CMP conditioner capable of controlling the polishing depth 2 in Embodiment 2 is similar with the CMP conditioner capable of controlling the polishing depth in Embodiment 1. The difference between the two embodiments is that thicknesses of the abrasive units of the CMP conditioner capable of controlling the polishing depth in Embodiment 1 are equal, i.e., the thickness of the binding layer is fixed and the thicknesses of the abrasive unit substrates are equal. However, the abrasive units of the CMP conditioner capable of controlling the polishing depth 2 in Embodiment 2 have a first tip height and a second tip height, i.e., the thickness of the binding layer is fixed but the abrasive unit substrates have different thicknesses.
The CMP conditioner capable of controlling the polishing depth 2 of the present embodiment comprises the substrate 20 made of stainless steel, the binding layer 21, the abrasive units 22, 22′, and the abrasive terminal units 25 which are made of silicon carbide. The substrate 20 is a flat substrate and has a thickness of 80 mm. The binding layer 21 is disposed on the substrate 20. Each abrasive unit 22, 22′ has the abrasive unit substrate 23, 23′ and the abrasive layer 24, 24′. The abrasive unit substrate 23, 23′ is a ceramic substrate made of silicon carbide. The abrasive unit substrate 23, 23′ has two different thicknesses, 20 mm and 30 mm. The surface of the abrasive unit substrate 23, 23′ is flat surface. The abrasive layer 24, 24′ is deposited on the abrasive unit substrate 23, 23′ by chemical vapor deposition. The abrasive layer 24, 24′ has the abrasive tips. The abrasive tips are in the shape of pyramids, more specifically, quadrangular pyramids (such as FIG. 5A). The abrasive tips are continuously arranged on the abrasive unit substrate 23, 23′ with an array pattern. The alignment directions of the abrasive tips are uniform. The tip angles of the abrasive tip are equal. The abrasive units 22 have a first tip height and the abrasive units 22′ have a second tip height. A height difference between the first tip height and the second tip height is 5 micrometers to 100 micrometers, inclusive. The abrasive tips of the abrasive units 22, 22′ are relatively higher than the surfaces of the abrasive terminal units by 5 micrometers to 100 micrometers, inclusive. The abrasive units 22, 22′ and the abrasive terminal units 25 are fixed on the substrate 20 via the binding layer 11. A protrusion height is between the abrasive units 22, 22′ and the abrasive terminal units 25. When the chemical mechanical polishing conditioner capable of controlling the polishing depth 2 is applied to an abrasive article, a polishing depth of the abrasive article can be controlled by the protrusion height. With reference to FIG. 4, the abrasive units 22, 22′ and the abrasive terminal units 25 are on the substrate 20 and the binding layer 21. Each abrasive unit 22, 22′ has the abrasive unit substrate 23, 23′ and the abrasive layer 24, 24′. Surfaces of the abrasive unit substrates 23, 23′ are patterned to form the abrasive tips. Besides, the abrasive units 22 having the first tip height are shown in the shape of pyramids with grids and the abrasive units 22′ having the second tip height are shown in the shape of pyramids in white color. The abrasive units 22, 22′ are arranged alternately with the abrasive terminal units in an annular pattern.

Embodiment 3

The CMP conditioner capable of controlling the polishing depth in Embodiment 3 is similar to the CMP conditioner capable of controlling the polishing depth in Embodiment 1. The difference between the two embodiments is that the abrasive tips of the CMP conditioner capable of controlling the polishing depth in Embodiment 1 are in the shape of pyramids and the abrasive tips of the CMP conditioner capable of controlling the polishing depth in Embodiment 3 are in a different shape from the abrasive tips of the CMP conditioner capable of controlling the polishing depth in Embodiment 1.
With reference to FIG. 5A, the abrasive tips 16 of the CMP conditioner capable of controlling the polishing depth in Embodiment 1 are in the shape of pyramids and the abrasive tips 16 are continuously arranged on the abrasive unit substrate 13 with an array pattern. With reference to FIG. 5B, the abrasive tips 36 of Embodiment 3 are in the shape of prisms, specifically, quadrangle prisms. The abrasive tips 36 of the abrasive layer 34 are continuously arranged on the abrasive unit substrate 33 with an array pattern.

Embodiment 4

The CMP conditioner capable of controlling the polishing depth in Embodiment 4 is similar to the CMP conditioner capable of controlling the polishing depth in Embodiment 1. The difference between the two embodiments is that the abrasive tips of the CMP conditioner capable of controlling the polishing depth in Embodiment 1 are in the shape of pyramids and the abrasive tips of the CMP conditioner capable of controlling the polishing depth in Embodiment 4 are in a different shape from the abrasive tips of the CMP conditioner capable of controlling the polishing depth in Embodiment 1.
With reference to FIG. 5A, the abrasive tips 16 of the CMP conditioner capable of controlling the polishing depth in Embodiment 1 are in the shape of pyramids and the abrasive tips 16 are continuously arranged on the abrasive unit substrate 13 with an array pattern. With reference to FIG. 5C, the abrasive tips 46 of Embodiment 4 are cylindrical in shape. The abrasive tips 46 of the abrasive layer 44 are continuously arranged on the abrasive unit substrate 43 with an array pattern.
Even though numerous characteristics and advantages of the present invention have been set forth in the foregoing description, together with details of the structure and features of the invention, the disclosure is illustrative only. Changes may be made in the details, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.

Claims

What is claimed is:

1. A chemical mechanical polishing conditioner capable of controlling the polishing depth, comprising:

a substrate;

a binding layer disposed on the substrate;

multiple abrasive units placed on the binding layer, each abrasive unit having an abrasive layer and an abrasive unit substrate, the abrasive layer being a diamond film formed by chemical vapor deposition and having multiple abrasive tips; and

multiple abrasive terminal units placed on the binding layer;

wherein the abrasive tips of the abrasive units are relatively higher than surfaces of the abrasive terminal units, and a protrusion height is between the abrasive units and the abrasive terminal units.

2. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the abrasive units and the abrasive terminal units are arranged annularly.

3. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the abrasive units are arranged alternately with the abrasive terminal units.

4. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the abrasive units have a first tip height and a second tip height and the first tip height is different from the second tip height.

5. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 4, wherein a height difference between the first tip height and the second tip height is 5 micrometers to 100 micrometers, inclusive.

6. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 5, wherein a height difference between the first tip height and the second tip height is 15 micrometers to 60 micrometers, inclusive.

7. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 4, wherein the abrasive units have a third tip height and a fourth tip height.

8. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the abrasive tips of the abrasive units are relatively higher than the surfaces of the abrasive terminal units by 5 micrometers to 100 micrometers, inclusive.

9. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein heights of the abrasive units are equal, and a planarized surface of the chemical mechanical polishing conditioner is formed by the abrasive units.

10. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the abrasive tips are in the shape of knife edges, cones, arcs, cylinders, pyramids, or prisms.

11. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein alignment directions of the abrasive tips are uniform, partially uniform, or different.

12. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein tip angles of the abrasive tips are equal, partially equal, or different.

13. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein horizontal distances between any two neighboring abrasive tips are equal, partially equal, or different.

14. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein thicknesses of the abrasive units are equal, partially equal, or different.

15. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein a middle layer is disposed between the abrasive layer and the abrasive unit substrate.

16. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 15, wherein the middle layer is made of the group consisting of aluminum oxide, silicon carbide, and aluminum nitride.

17. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the abrasive unit substrate is a conductive substrate or an insulating substrate.

18. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the abrasive terminal units are made of an anti-abrasion material.

19. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the binding layer is made of a ceramic material, a brazing material, an electroplating material, a metallic material, or a polymeric material.

20. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 19, wherein the polymeric material is epoxy resin, polyester resin, polyacrylate resin, or phenol resin.

21. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 19, wherein the brazing material is made of the group consisting of iron, cobalt, nickel, chromium, manganese, silicon, aluminum, and any combination thereof.

22. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the substrate is a stainless steel substrate, a die steel substrate, a metal alloy substrate, a ceramic substrate, a plastic substrate, or any combination thereof.

23. The chemical mechanical polishing conditioner capable of controlling the polishing depth as claimed in claim 1, wherein the substrate is a flat substrate or a notch substrate.