US20220241929A1

US20220241929A1 - Chemical mechanical polishing pad conditioner and manufacturing method thereof

Info

Publication number: US20220241929A1
Application number: US17/546,664
Authority: US
Inventors: Jui-Lin Chou; Min-Hung Wu; Chin-Chung Chou; Yu-Chau Hung
Original assignee: Kinik Co
Current assignee: Kinik Co
Priority date: 2021-02-01
Filing date: 2021-12-09
Publication date: 2022-08-04
Also published as: JP2022117934A; TW202232594A; TWI768692B; JP7334225B2

Abstract

A chemical mechanical polishing pad conditioner includes a bottom substrate, an intermediate substrate and a diamond film. The intermediate substrate is arranged on the bottom substrate; the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion; the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas arranged among the first polishing areas; and the first polishing areas extend along a radial direction on the intermediate substrate. The diamond film is arranged on the intermediate substrate, and the diamond film overlays the first polishing areas and the second polishing areas. The diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, and first polishing tips protruding from the first surfaces and second polishing tips protruding from the second surface are formed on the diamond film.

Description

FIELD OF THE INVENTION

The present invention relates to a conditioner, and particularly to a chemical mechanical polishing pad conditioner and a manufacturing method thereof.

BACKGROUND OF THE INVENTION

In a manufacturing process of semiconductor wafers, a chemical mechanical polishing process is carried out to flatten wafer surfaces, in which a polishing pad fixed on a rotating platform is used to contact and polish the wafer. During polishing, debris and polishing slurry may be accumulated in holes of the polishing pad, which may wear the polishing pad and reduce the performance. Therefore, conditioners has to be used to remove the debris and polishing slurry accumulated in the polishing pad.
The known chemical mechanical polishing pad dress is generally classified into two types: one type adopts diamond particles as a polishing material, and the other type adopts a chemical vapor deposition (CVD) diamond film as a polishing material.
For the chemical mechanical polishing pad conditioner adopting the CVD diamond film as the polishing material, in the prior art, as provided in Taiwan Patent Publication No. TW200948533, a CVD diamond coating is smeared on a substrate consisting of a ceramic material and a material formed preferably by unreacted carbides, and the regulating part has a predictable or unpredictable convex surface characteristic structure to facilitate the use of the regulating part. The convex surface characteristic structure includes a concentric ring, a discontinuous or staggered concentric ring, spiral, discontinuous spiral, rectangles, discontinuous rectangles, etc.
Further, Taiwan Patent Publication No. TW201805117 previously filed by the applicant discloses a chemical mechanical polishing conditioner, which includes a bottom substrate, an intermediate substrate and a polishing layer. The intermediate substrate is arranged on the bottom substrate, and the intermediate substrate includes a hollow portion, an annular portion surrounding the hollow portion and at least one projecting ring away from the bottom substrate and protruding from the annular portion. The projecting ring includes a plurality of bumps arranged to be spaced apart from each other along an annulus region. The bumps extend in a radial direction of the intermediate substrate. A diamond film is arranged on the intermediate substrate to form a plurality of polishing bumps with the bumps. The polishing bumps may have a flat top surface and may also have a rough top surface.
For another example, a chemical mechanical flattened polishing pad conditioner provided by Taiwan Patent Publication No. TW201249595 includes a substrate provided with a first set of projections and a second set of projections. The first set of projections has a first average height, and the second set of projections has a second average height different from the first average height. Tops of the first set of projections and the second set of projections are respectively provided with a layer of polycrystalline diamond. In the description, a remote surface of one or more projections in the first set of projections may have an irregular or rough surface, and the remote surface of each projection in the second set of projections may have an irregular or rough surface. However, in other embodiments, the top of one or more projections in the first set of projections may have a flat surface, and the top of each projection in the second set of projections may have a flat surface.
The chemical mechanical polishing pad conditioner adopting the CVD diamond film as the polishing material may be further combined with polishing particles. For example, Taiwan Patent Publication No. TW201630689 filed previously by the applicant discloses a chemical mechanical polishing conditioner, which includes a substrate being circular. A surface of the substrate is divided into a central surface and an outer surface. The center surface is recessed to form a recessed part. The outer surface encompasses the central surface and is recessed to form a plurality of mounting holes. A plurality of sliding blocks are arranged on the outer surface and distributed among the mounting holes. Each sliding block has a sliding dressing surface. In addition, the chemical mechanical polishing conditioner is further provided with a plurality of abrasive bars that are correspondingly arranged in the mounting holes. The abrasive bar includes a bar body and an abrasive particle on the top surface of the bar body.
Although it is mentioned in the prior arts that the polishing bump may have a rough top surface, the rough top surface is not further defined or described. In the description of Taiwan Patent Publication No. TW201249595, it is merely mentioned that the roughness or irregular surface at the distal surfaces of the protrusions can be attributed at least in part to the roughness from a porous graphite substrate that was converted to silicon carbide; and moreover, whether the top surface is rough or not is only one of the implementation, and the top surface may be flat in other embodiments. Apparently, the shape of the top surface of the polishing bump is not a technical focus of the prior art.
In Taiwan Patent No. TW467802, a conditioner for polishing pad and method for manufacturing the same are mentioned. The conditioner includes a substrate with a plurality of geometric protrusions on at least one side thereof, and a diamond layer with uniformed thickness generally formed on a whole surface of the side edge of the substrate with the geometric protrusions. The geometric protrusion has a flat upper surface or an upper surface including a plurality of small geometric projections formed by concave toothed grooves.
The intermediate substrate of the chemical mechanical polishing conditioner disclosed in Taiwan Patent No. TWI616279 includes a hollow portion, an annular portion surrounding the hollow portion and at least one projecting ring away from the bottom substrate and protruding from the annular portion. The projecting ring includes a plurality of bumps arranged to be spaced apart from each other along an annulus region. A diamond film is arranged on the intermediate substrate, and the diamond film forms a plurality of abrasive projections.
Even if the above prior arts improve the top surface of the conventional chemical mechanical polishing conditioner such that a plurality of bumps are formed as a specific shape to achieve effects such as consistent polishing or cutting speed, enhanced removal capacity, etc. However, in practical application, the residual debris in small holes of the polishing pad still cannot be removed effectively, which affects the life time of the chemical mechanical polishing conditioner.

SUMMARY OF THE INVENTION

The present invention provides a chemical mechanical polishing pad conditioner, which can effectively remove impurities or debris of a chemical mechanical polishing pad, and improve the service life of the chemical mechanical polishing conditioner.
The present invention provides a manufacturing method of the chemical mechanical polishing pad conditioner, which can effectively remove impurities or debris of a chemical mechanical polishing pad, and improve the life time of the chemical mechanical polishing conditioner.
The chemical mechanical polishing pad conditioner includes a bottom substrate; an intermediate substrate arranged on the bottom substrate, wherein the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion, the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas arranged between the first polishing areas, and the first polishing areas extend along a radial direction on the intermediate substrate; and a diamond film arranged on the intermediate substrate, wherein the diamond film overlays the first polishing areas and the second polishing areas, the diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, the first surfaces overlay the first polishing areas, and the second surfaces overlay the second polishing areas; the diamond film is formed with a plurality of first polishing tips protruding from the first surfaces and a plurality of second polishing tips protruding from the second surfaces; the first polishing tip has a first tip height, and the second polishing tip has a second tip height; the first polishing areas have surface roughness between 1 μm and 50 μm according to the shape of the first polishing tips; and the second polishing areas have surface roughness ranged between 1 μm and 50 μm according to the shape of the second polishing tips.
A manufacturing method of the chemical mechanical polishing pad conditioner of the present invention includes the following steps:
providing an intermediate substrate, wherein the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion, the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas arranged between the first polishing areas, and the first polishing areas extend along a radial direction on the intermediate substrate; and forming a diamond film on the intermediate substrate, wherein the diamond film overlays the first polishing areas and the second polishing areas, the diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, the first surfaces overlay the first polishing areas, and the second surfaces overlay the second polishing areas; the diamond film is formed with a plurality of first polishing tips protruding from the first surfaces and a plurality of second polishing tips protruding from the second surfaces; the first polishing tips have a first tip height, and the second polishing tips have a second tip height; the first surfaces have surface roughness between 1 μm and 50 μm according to the shape of the first polishing tips; the second surfaces have surface roughness between 1 μm and 50 μm according to the shape of the second polishing tips; and arranging the intermediate substrate on a bottom substrate.
The chemical mechanical polishing pad conditioner of the present invention forms a plurality of first polishing tips on the diamond film, and a plurality of second polishing tips are formed on the second polishing area. Compared with the conventional conditioners, the uniformity of the chemical mechanical polishing pad conditioner of the present invention is improved. When the chemical mechanical polishing pad conditioner with good uniformity performs the dressing, the residual debris even in small holes can also be removed successfully. Therefore, the removal rate can be improved. Combined with the above advantages, the life time of the chemical mechanical polishing pad conditioner of the present invention is prolonged.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a chemical mechanical polishing pad conditioner according to a first embodiment of the present invention.

FIG. 2A is a schematic sectional view along an A-A′ direction of FIG. 1.

FIG. 2B is a schematic sectional view along a B-B′ direction of FIG. 1.

FIG. 2C is a schematic sectional view of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

FIG. 3A is a partial perspective view of FIG. 1.

FIG. 3B is a partial perspective view of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

FIG. 4A is a top view of the chemical mechanical polishing pad conditioner according to a second embodiment of the present invention.

FIG. 4B is a schematic sectional view along a C-C′ direction of FIG. 4A.

FIG. 5 is a top view of the chemical mechanical polishing pad conditioner in another form according to the second embodiment of the present invention.

FIG. 6 is a top view of the chemical mechanical polishing pad conditioner according to a third embodiment of the present invention.

FIG. 7 is a schematic diagram of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

FIG. 8 is a schematic diagram of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

FIG. 9 is flow chart of a manufacturing method of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The foregoing and other technical contents, characteristics and effects of the present invention may be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. Directional terms mentioned in the following embodiments, such as upper, lower, left, right, front or rear, etc., are only directions referring to the attached drawings. Therefore, the directional terms used herein are used for description rather than limiting the present invention.

First Embodiment

FIG. 1, FIG. 2A and FIG. 2B respectively show a top view, a schematic sectional view along line A-A′ and a schematic sectional view along line B-B′ of a chemical mechanical polishing pad conditioner 1 according to a first embodiment of the present invention.
The chemical mechanical polishing pad conditioner 1 of the present invention includes a bottom substrate 10, an intermediate substrate 20 and a diamond film 30. The intermediate substrate 20 is arranged on the bottom substrate 10. The diamond film 30 overlays the intermediate substrate 20.
The intermediate substrate 20 includes a hollow portion 21 and an annular portion 22 surrounding the hollow portion 21. The annular portion 22 includes a plurality of first polishing areas 221 arranged at intervals along an annular area and a plurality of second polishing areas 222 arranged between the first polishing areas 221.The first polishing area 221 extends along a radial direction of the intermediate substrate 20. The first polishing areas 221 include a plurality of first tips 221 a, and the second polishing areas 222 include a plurality of second tips 222 a.
As shown in FIG. 2A and FIG. 2B, in the present embodiment, the diamond film 30 is formed on the intermediate substrate 20. The diamond film 30 overlays the first polishing areas 221 and the second polishing areas 222.A plurality of first polishing tips 311 protruding from the first surfaces 31 are formed on the diamond film 30. A plurality of second polishing tips 321 protruding from the second surfaces 32 are formed on the second surface 32. In the present embodiment, the first polishing tip 311 and the second polishing tip 321 are formed by covering the intermediate substrate 20 with the diamond film 30. The first polishing tips 311 have a first tip height H1, and the second polishing tips 321 have a second tip height H2. The diamond film 30 is formed on the intermediate substrate 20. The diamond film 30 overlays the first polishing areas 221. In the present embodiment, the first polishing areas 221 have a surface roughness between 1 μm and 50 μm which maybe adjustable according to the shape of the first polishing tips 311. The second polishing areas 222 have a surface roughness between 1 μm and 50 μm which maybe adjustable according to the shape of the second polishing tips 321. The detail of the structure is described below.
In an embodiment of the present invention, the surface roughness of the first polishing area 221 is greater than, equal to or less than the surface roughness of the second polishing area 222. In an embodiment of the present invention, the surface roughness of the single first polishing area 221 includes at least two subsets of ranges; and the surface roughness of the single second polishing area 222 includes at least two subsets of ranges. For example, the surface roughness of the single first polishing area 221 or the single second polishing area 222 may include a range of 1 μm to 20 μm and a range of 21 μm to 50 μm. In an embodiment of the present invention, the surface roughness of these first polishing areas 221 may be the same or different; and the surface roughness of these second polishing areas 222 may be the same or different. For example, the surface roughness of some of the first polishing areas 221 or the second polishing areas 222 may be between 1 μm and 20 μm, and the surface roughness of the other part of the first polishing areas 221 or the second polishing areas 222 may be between 21 μm and 50 μm. In an embodiment of the present invention, the first tip height H1 may be greater than, equal to or less than the second tip height H2.
In an embodiment of the present invention, the first tip height H1 of the first polishing tips 311 includes at least two subsets of ranges; and the second tip height H2 of these second polishing tips 321 includes at least two subsets of ranges. In an embodiment of the present invention, the first tip height H1 may be the same or different, and the second tip height H2 may be the same or different.
In an embodiment of the present invention, the first tip height H1 is between 5 μm and 300 μm. In an embodiment of the present invention, the second tip height H2 is between 5 μm and 300 μm.
In an embodiment of the present invention, a height difference between the first polishing areas 221 and the second polishing areas 222 may be between 1 μm and 300 μm. FIG. 2C is a schematic sectional view of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention. The first polishing areas 221 and the second polishing areas 222 are equal in height, that is, the height difference is 0 μm.
In an embodiment of the present invention, the first polishing area 221 is a bump 201. The diamond film 30 overlays the first polishing areas 221 and forms a plurality of polishing projections 301 with the bumps 201. The adjacent polishing projections 301 are separated from each other at a distance. The distance may be varied between 1 to 5 times of a width of the bump 201. In the present embodiment, the polishing projection 301 is formed in an arc shape with respect to a radial direction of the intermediate substrate 20. In other words, as shown in FIG. 1, the first polishing area 221 is a curved segment when viewed from top. In other embodiments, the shape of the first polishing areas 221 may be trapezoid, sector, circle, polygon or other shapes, and the first polishing areas 221 may be formed in a radial shape or helical shape.
The bottom substrate 10 may be a planar substrate or may be a non-planar substrate with a groove capable of accommodating the intermediate substrate 20. In the present embodiment, as shown in FIG. 1, the bottom substrate 10 is provided with a annular accommodating groove 10b for receiving the intermediate substrate 20. Materials suitable for the bottom substrate 10 may be, for example, stainless steel, metal materials, polymer materials, ceramic materials or a combination thereof The intermediate substrate 20 is arranged on the bottom substrate 10. The material of the intermediate substrate 20 may be conductive silicon carbide or non-conductive silicon carbide. In an embodiment of the present invention, the intermediate substrate 20 is a conductive material. The conductive material may be molybdenum, tungsten, tungsten carbide or a combination thereof. In another embodiment of the present invention, the intermediate substrate 20 is a non-conductive material. The non-conductive material is silicon or monocrystal aluminum oxide.
In the present embodiment, the intermediate substrate 20 includes a hollow portion 21 and a annular portion 22 surrounding the hollow portion 21. The annular portion 22 is formed with a plurality of bumps 201 by a laser machining method. The bumps 201 are arranged along the annular portion 22 to form a first polishing area 221. Optionally, the bumps 201 may be arranged around the hollow portion 21 to form at least one circle of the first polishing area 221. For example, the bumps may form 1 to 20 circles of the first polishing area 221, preferably, 2 to 20 circles of the first polishing area 221. The present embodiment herein is described by taking 2 circles of the first polishing area 221 as an example. At the time, the first circle and second circle of the bumps 201 in the adjacent first polishing areas 221 may be staggered to each other. In an embodiment of the present invention, the first polishing areas 221 are formed as a plurality of circles between 2 and 20. In other embodiments, the first polishing areas 221 may also be a single circle. The shape of the bumps 201 may be trapezoid, sector, circle, polygon or other shapes. In the present embodiment, the bumps 201 are formed by the laser machining method. In other embodiments, the bumps 201 may also be formed by electrical discharge machining method, a die casting method or other methods, which is not specifically limited by the present invention.
In the present embodiment, the diamond film 30 is formed by a chemical vapor deposition method. The chemical vapor deposition method, for example, may be filament CVD, Plasma Enhanced Chemical Vapor Deposition (PECVD), Microwave plasma enhanced chemical vapor deposition (MPCVD) or other similar methods. A plurality of polishing projections 301 are formed on the surface of the intermediate substrate 20 along the bumps 201 of the intermediate substrate 20.
The surface of the intermediate substrate 20 has a patterned structure. In the present embodiment, the patterned structure is the shape formed by the foregoing tips. The patterned structure may be formed with the bumps 201 in a same process (such as the laser machining method). The patterned structure is formed on a top surface of the bump 201 and on the surface of the annular portion 22 of the intermediate substrate 20 where the bump 201 is not formed.
Referring to FIG. 3A, the diamond film 30 is formed according to the shape of the intermediate substrate 20. A top surface 3011 of the polishing projections 301 forms a shape corresponding to the patterned structure of the bump 201. thereby defining the first polishing tips 311; and the second polishing tips 321 (as shown in FIG. 2A) are defined between the polishing projections 301. In an embodiment of the present invention, the patterned structure includes a plurality of three-dimensional geometrical structure 3012 that are distributed regularly or irregularly. In other embodiments, the geometrical structure 3012 may be a plurality of regularly or irregularly arranged triangular cones, quadrangular cones, pentagonal cones, hexagonal cones, heptagonal cones, octagonal cones, triangular columns, quadrangular columns, pentagonal columns, hexagonal columns, heptagonal columns, octagonal columns, cones, cylinders, elliptical cones, elliptical columns or combinations thereof The patterned structure endows the top surface 3011 of the polishing bump 301 with a centerline average roughness (Ra) between 2 and 20. In an embodiment of the present invention, a first distance D1 is provided between a center point of the geometrical structure 3012 and a center point of the adjacent geometrical structure 3012. The first distance D1 is 1 to 8.3 times of a width D0 of the geometrical structure 3012.
In the present embodiment, the bottom substrate 10 and the intermediate substrate 20 are bonded through an adhesive layer 40. The adhesive layer 40 may be made of any material with adhesion, such as resin. In other embodiments, the intermediate substrate 20 may also be fixed on the bottom substrate 10 through a brazing method or a mechanical manner
Referring to FIG. 3A, when the chemical mechanical polishing pad conditioner 1 is viewed from top, the first polishing areas 221 formed by a plurality of polishing projections 301 and the second polishing areas 222 formed between every two polishing projections 301 may be seen. The first polishing areas 221 and the second polishing areas 222 have a height difference. The first polishing areas 221 are used as a main part for conditioning the polishing pad. The second polishing areas 222 are used as a passage for flow out of debris. During the conditioning, the residual debris even in small holes may also be removed successfully, so that the removal rate can be improved. On the other hand, when a soft polishing pad is dressed, the surface of the soft polishing pad is not flat. When the soft polishing pad is attached to the conditioner 1, the second polishing area 222 with a lower plane may effectively serve as an auxiliary part for dressing the polishing pad.
In the present embodiment, the number of the geometrical structures 3012 per square millimeter (mm²) on the polishing bump 301 is between 10 and 250. The arrangement way of the geometrical structures 3012 on the top surface 3011 or the second polishing area 222 is not limited specifically. For example, as shown in FIG. 3A, two aggregations of geometrical structure 303 may be arranged and formed on the top surface 3011 of the polishing projections 301. At least one flat area 304 is provided between the aggregations 303. The flat area 304 does not have the polishing projection 301. In other embodiments, the top surface 3011 may be provided with two or more aggregations 303. In other embodiments, the geometrical structures 3012 are not aggregated to form the aggregation 303, but uniformly distributed on the top surface 3011.
Referring to FIG. 3B, FIG. 3B is a partial perspective view of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention. In the present embodiment, the diamond film 30 is formed with aggregations 303 a, 303 b, 303 c and 303 d of different shapes, wherein the aggregations 303 a and 303 b are formed in the first polishing area 221, and the aggregations 303 c and 303 d are formed in the second polishing area 222.
In an embodiment, the aggregations 303 a and 303 b on the first polishing area 221 are bumps with different sizes, as shown in FIG. 3B. On the other hand, the aggregation 303 a on the first polishing area 221 and the aggregation 303 c on the second polishing area 222 may have the same tip height and/or form the same surface roughness, that is, the aggregations 303 a and 303 c are the same; and the aggregation 303 b on the first polishing area 221 and the aggregation 303 d on the second polishing area 222 may have the same tip height and/or form the same surface roughness, that is, the aggregations 303 b and 303 d are the same. Or, the aggregation 303 a on the first polishing area 221 and the aggregation 303 c on the second polishing area 222 may have different tip heights and/or form different surface roughness, that is, the aggregations 303 a and 303 c are different; and the aggregation 303 b on the first polishing area 221 and the aggregation 303 d on the second polishing area 222 may have different tip heights and/or form different surface roughness, that is, the aggregations 303 b and 303 d are different.

Second Embodiment

Referring to FIG. 4A, FIG. 4A shows a second embodiment of the chemical mechanical polishing pad conditioner 1 of the present invention. In the second embodiment, except for further including a plurality of polishing units 50, the structure of the chemical mechanical polishing pad conditioner 1 is substantially the same with the first embodiment.
Referring to FIG. 4B, FIG. 4B is a schematic sectional view along line C-C′ of FIG. 4A. In the chemical mechanical polishing pad conditioner 1 of the second embodiment of the present invention, the polishing unit 50 includes a supporting rod 51, a polishing particle 52 arranged on the supporting rod 51, and an abrasive bonding layer 53 used for bonding the supporting rod 51 and the polishing particle 52. In the second embodiment, the polishing unit 50 is arranged on a position of the bottom substrate 10 corresponding to the hollow portion 21 of the intermediate substrate 20. Referring to FIG. 5, FIG. 5 is a top view of the chemical mechanical polishing pad conditioner 1 of another implementation according to the second embodiment of the present invention. The polishing unit 50 is arranged on a peripheral portion 10 a of the bottom substrate 10.
FIG. 6 is a schematic diagram of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention. In the present embodiment, the annular portion 22 includes separated segments 22 a, 22 b, 22 c and 22 d spliced adjacent to each other. Compared with the structure with a single circular shape, a plurality of segments are easy for mass production, so that the cost may be reduced greatly, and the production efficiency may be improved. In an embodiment of the present invention, the number of the segments is between 2 and 6. In a preferred embodiment, the number of the combined segments is 4.
FIG. 7 is a schematic diagram of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention. In the present embodiment, the first polishing areas 221 (the bumps 201) of the annular portion 22 is fan-shaped and arranged equidistantly; and FIG. 8 is a schematic diagram of the chemical mechanical polishing pad conditioner according to an embodiment of the present invention. In the present embodiment, the first polishing areas 221 (the bumps 201) of the annular portion 22 are elongated and arranged in a radial shape. Therefore, the chemical mechanical polishing pad conditioner 1 may have different polishing performance. In other embodiments, the bumps 201 may be configured in more combinations of different shapes and may be arranged as concentric rings, discontinuous or staggered concentric rings, spirals, discontinuous spirals, rectangles, discontinuous rectangles, and etc.
In combination with the above drawings, and referring to FIG. 9, FIG. 9 is flow chart of a manufacturing method of the chemical mechanical polishing pad conditioner 1. The manufacturing method of the chemical mechanical polishing pad conditioner 1 includes the following steps:
(S1) an intermediate substrate 20 is provided, wherein the intermediate substrate 20 includes a hollow portion 21 and a annular portion 22 surrounding the hollow portion 21.
(S2) a diamond film 30 is formed on the intermediate substrate 20, wherein the diamond film 30 overlays the first polishing areas 221 and the second polishing areas 222, a plurality of first polishing tips 311 protruding from the first surfaces 31 and a plurality of second polishing tips 321 protruding from the second surfaces 32 are formed on the diamond film 30.
In an embodiment of the present invention, the annular portion 22 is provided with a plurality of bumps 201 through energy machining method (such as electrical discharge machining method, and laser machining method) or die casting method. For example, when a conductive material is used as the intermediate substrate, the electrical discharge machining method may be used. When a non-conductive material is used as the intermediate substrate, the laser machining method may be used to form the bumps 201 on the annular portion 22. Furthermore, the die casting method may also be used directly to obtain the above structure during the formation. For example, powder is pressed into an expected shape and then sintered.
(S3) The intermediate substrate 20 is arranged on the bottom substrate 10.
In conclusion, according to the chemical mechanical polishing pad conditioner 1 of the present invention, a plurality of first polishing tips 311 are formed on the bumps 201, and a plurality of second polishing tips 321 are formed on the second polishing area 222. Compared with the conventional technologies, the uniformity of the chemical mechanical polishing pad conditioner 1 of the present invention is improved. When the chemical mechanical polishing pad conditioner with good uniformity is used for dressing, the residual debris even in small holes can also be removed successfully, so that the removal capacity can be improved. Combined with the above advantages, the life time of the chemical mechanical polishing pad conditioner of the present invention is prolonged.

Claims

What is claimed is:

1. A chemical mechanical polishing pad conditioner, comprising:

a bottom substrate;

an intermediate substrate, arranged on the bottom substrate, wherein the intermediate substrate comprises a hollow portion and a annular portion surrounding the hollow portion, the annular portion comprises a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas disposed between the first polishing areas, and the first polishing areas extend along a radial direction on the intermediate substrate; and

a diamond film, arranged on the intermediate substrate, wherein the diamond film overlays the plurality of first polishing areas and the plurality of second polishing areas, the diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, the plurality of first surfaces overlay the plurality of first polishing areas, and the plurality of second surfaces overlay the plurality of second polishing areas; and

wherein a plurality of first polishing tips protruding from the plurality of first surfaces and a plurality of second polishing tips protruding from the plurality of second surfaces are formed on the diamond film, the plurality of first polishing tips have a first tip height, the second polishing tips have a second tip height, the plurality of first polishing areas have a surface roughness between 1 μm and 50 μm according to shapes of the plurality of first polishing tips, and the plurality of second polishing areas have a surface roughness between 1 μm and 50 μm according to shapes of the plurality of second polishing tips.

2. The chemical mechanical polishing pad conditioner according to claim 1, wherein the surface roughness of the plurality of first polishing areas is greater than, equal to or less than the surface roughness of the second polishing areas.

3. The chemical mechanical polishing pad conditioner according to claim 1, wherein the surface roughness of one of the plurality of first polishing areas includes at least two subsets of ranges.

4. The chemical mechanical polishing pad conditioner according to claim 1, wherein the surface roughness of one of the plurality of second polishing area includes at least two subsets of ranges.

5. The chemical mechanical polishing pad conditioner according to claim 1, wherein the first tip height is greater than, equal to or less than the second tip height.

6. The chemical mechanical polishing pad conditioner according to claim 1, wherein the plurality of first polishing tips include at least two subsets of the first tip heights.

7. The chemical mechanical polishing pad conditioner according to claim 1, wherein the plurality of second polishing tips include at least two subsets of the second tip heights.

8. The chemical mechanical polishing pad conditioner according to claim 1, wherein the first tip heights are between 5 μm and 300 μm.

9. The chemical mechanical polishing pad conditioner according to claim 1, wherein the second tip heights are between 5 μm and 300 μm.

10. The chemical mechanical polishing pad conditioner according to claim 1, wherein the plurality of first polishing areas and the plurality of second polishing areas are equal in height.

11. The chemical mechanical polishing pad conditioner according to claim 1, wherein a height difference between the plurality of first polishing areas and the plurality of second polishing areas is between 1 μm and 300 μm.

12. The chemical mechanical polishing pad conditioner according to claim 1, the shapes of the first polishing areas is trapezoid, sector, circle or polygon.

13. The chemical mechanical polishing pad conditioner according to claim 1, wherein the first polishing area is formed as a bump, the diamond film overlays the plurality of first polishing areas and forms a plurality of polishing projections over the bumps, two adjacent polishing projections are separated from each other at a distance, and the distance is 1 to 5 times of a width of the bump.

14. The chemical mechanical polishing pad conditioner according to claim 1, wherein the first polishing area is formed as a bump, the diamond film overlays the first polishing areas and forms a plurality of polishing projections along the bumps, and the plurality of polishing projections are formed in an arc shape with respect to a radial direction of the intermediate substrate.

15. The chemical mechanical polishing pad conditioner according to claim 1, wherein the first polishing area is formed as a bump, the diamond film overlays the first polishing areas and forms a plurality of polishing projections over the bumps, the polishing projection includes a top surface and a plurality of three-dimensional geometrical structures formed on the top surface and arranged regularly or irregularly.

16. The chemical mechanical polishing pad conditioner according to claim 15, wherein a number of the geometrical structures per square millimeter on each of the plurality of polishing projection is between 10 and 2500.

17. The chemical mechanical polishing pad conditioner according to claim 15, wherein a first distance is provided between center points of two adjacent geometrical structures, and the first distance is 1 to 8.3 times of a width of the geometrical structures.

18. The chemical mechanical polishing pad conditioner according to claim 1, wherein the intermediate substrate is made of a conductive material, and the conductive material is selected from a group consisting of molybdenum, tungsten and tungsten carbide.

19. The chemical mechanical polishing pad conditioner according to claim 1, wherein the intermediate substrate is made of a non-conductive material, and the non-conductive material is silicon or monocrystal aluminum oxide.

20. The chemical mechanical polishing pad conditioner according to claim 1, wherein a material of the intermediate substrate is conductive silicon carbide or non-conductive silicon carbide.

21. The chemical mechanical polishing pad conditioner according to claim 1, further comprising an adhesive layer arranged between the bottom substrate and the intermediate substrate.

22. The chemical mechanical polishing pad conditioner according to claim 1, wherein the first polishing area is formed in a single circular shape.

23. The chemical mechanical polishing pad conditioner according to claim 1, wherein the first polishing areas are formed in a plurality of circles, wherein a number of the circles is between 2 and 20.

24. The chemical mechanical polishing pad conditioner according to claim 23, wherein the adjacent first polishing areas are staggered to one another.

25. The chemical mechanical polishing pad conditioner according to claim 1, the bottom substrate is a planar substrate, and the intermediate substrate is arranged on the planar substrate.

26. The chemical mechanical polishing pad conditioner according to claim 1, wherein the bottom substrate is provided with a annular accommodating groove for receiving the intermediate substrate.

27. The chemical mechanical polishing pad conditioner according to claim 1, wherein the annular portion includes a plurality of separated segments spiced adjacent to each other.

28. The chemical mechanical polishing pad conditioner according to claim 27, wherein a number of the segments is between 2 and 6.

29. The chemical mechanical polishing pad conditioner according to claim 1, wherein the intermediate substrate is a circular substrate.

30. The chemical mechanical polishing pad conditioner according to claim 1, further comprising a plurality of polishing units, wherein the polishing unit includes a supporting rod, a polishing particle arranged on the supporting rod, and an abrasive bonding layer used for bonding the supporting rod and the polishing particle.

31. A manufacturing method of a chemical mechanical polishing pad conditioner, comprising the following steps:

providing an intermediate substrate, wherein the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion, the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas disposed between the first polishing areas, and the first polishing areas extend along a radial direction on the intermediate substrate; and

forming a diamond film on the intermediate substrate, wherein the diamond film overlays the plurality of first polishing areas and the plurality of second polishing areas, the diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, the plurality of first surfaces overlay the plurality of first polishing areas, the plurality of second surfaces overlay the plurality of second polishing areas, a plurality of first polishing tips protruding from the first surfaces and a plurality of second polishing tips protruding from the second surfaces are formed on the diamond film, the first polishing tips have a first tip height, the second polishing tips have a second tip height, the first surfaces have a surface roughness between 1 μm and 50 μm according to a shape of the first polishing tips, and the second surfaces have a surface roughness between 1 μm and 50 μm according to a shape of the second polishing tips; and arranging the intermediate substrate on a bottom substrate.