TWI768692B - Chemical mechanical polishing pad dresser and method of making the same - Google Patents

Abstract

A chemical mechanical polishing polishing pad conditioner includes a bottom substrate, an intermediate substrate and a diamond film. The intermediate substrate is disposed on the base substrate, and the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion. The second grinding zone is between the grinding zones, and the first grinding zone extends radially along one of the intermediate substrates. The diamond film is disposed on the intermediate substrate, and the diamond film covers the first grinding area and the second grinding area. The diamond film has a plurality of first surfaces and a plurality of second surfaces, and the diamond film is formed with a plurality of first grinding tips protruding from the first surface and a plurality of second grinding tips protruding from the second surface.

Description

Chemical mechanical polishing pad dresser and method of making the same

The present invention relates to a dresser, in particular to a chemical mechanical polishing pad dresser and a manufacturing method thereof.

In the manufacturing process of semiconductor wafers, in order to achieve the goal of flattening the surface of the wafer, a chemical mechanical polishing process is often used, in which a polishing pad fixed on a rotary table is used to contact and polish the wafer. However, the debris and polishing slurry generated by grinding will accumulate in the holes of the polishing pad, which will cause wear and tear of the polishing pad over time and reduce the polishing effect. Therefore, conditioners are often used to remove debris and abrasive slurry remaining in polishing pads.

Conventional chemical mechanical polishing pad dressers are roughly divided into two categories: one type uses diamond particles as abrasive material, and the other type uses chemical vapor deposition (Chemical Vapor Deposition, CVD) to deposit diamond film as abrasive material.

As far as the above-mentioned chemical mechanical polishing polishing pad conditioner using chemical vapor deposition method to deposit diamond film as abrasive material is concerned, in the prior art, such as the chemical mechanical polishing polishing pad conditioner provided by the Republic of China Patent Publication No. 200948533 , is a CVD diamond coating applied to a substrate consisting of a ceramic material and preferably an unreacted carbide-forming material with a conditioning member having a predictable or unpredictable convex feature to assist in conditioning use of items. The aforementioned convex features include concentric rings, discontinuous or staggered concentric rings, spirals, discontinuous spirals, rectangles, discontinuous rectangles, and the like.

In addition, the applicant of the present case provides a chemical mechanical polishing pad dresser in the Republic of China Patent Publication No. 201805117 previously proposed, which includes a bottom substrate, an intermediate substrate, a and an abrasive layer, the intermediate substrate is disposed on the bottom substrate, and the intermediate substrate includes a hollow portion, an annular portion surrounding the hollow portion, and at least one protrusion away from the bottom substrate and protruding from the annular portion ring, the protruding ring includes a plurality of bumps arranged at intervals along an annular zone area, the bumps extend along the radial direction of the intermediate substrate, and a diamond layer is arranged on the intermediate substrate, conforming to the bumps to form multiple bumps Each of the grinding bumps may have a flat top surface or a rough top surface.

Another example is the chemical mechanical planarization polishing pad organizer provided by the Republic of China Patent Publication No. 201249595, comprising a substrate having a first group of protrusions and a second group of protrusions, the first group of protrusions having a first average height and the second group of protrusions. The protrusions have a second average height different from the first average height, and the tops of both the first group of protrusions and the second group of protrusions have a layer of polycrystalline diamonds. It is mentioned in the specification of this application that the distal surface of one or more protrusions in the first set of protrusions may have an irregular or rough surface and the distal surface of each protrusion in the second set of protrusions may have an irregular or rough surface , but in other embodiments, the top of one or more protrusions in the first set of protrusions may have a flat surface, and the top of each protrusion in the second set of protrusions may have a flat surface.

The above-mentioned chemical mechanical polishing pad dresser with CVD diamond film as the grinding material can be further combined with abrasive particles. a base, the surface of the base is divided into a central surface and a peripheral surface showing concentric circles, the central surface is concave to form a concave portion, the peripheral surface surrounds the central surface and is concave to form a plurality of installation holes, and There are a plurality of sliders arranged on the peripheral surface and scattered among the installation holes, each slider has a slider dressing surface, in addition, the chemical mechanical polishing dresser also has a plurality of dressing columns correspondingly arranged in the In the installation hole, the dressing column includes a cylinder and an abrasive installed on the top surface of the cylinder.

Although it is mentioned in the prior patent documents that the grinding bump may have a rough top surface, the rough top surface is not defined or described. The Republic of China Invention Patent Publication No. 201249595 is in the specification It is briefly mentioned that its roughness or irregular surface may be at least partially attributable to the roughness from the porous stone-ground substrate converted to silicon carbide; furthermore, the roughness of the top surface is only one aspect of implementation, In other embodiments, it can also be a flat top surface. Obviously, the shape of the top surface of the polishing bump is not the technical focus of the foregoing case.

The Republic of China Invention Patent Certificate No. 147104 mentions the conditioner for the polishing pad area and its manufacturing method. The conditioner includes a substrate formed with a plurality of geometrically shaped protrusions at least on one side thereof, and a diamond layer of uniform thickness formed on substantially the entire surface of the side of the substrate with the geometrically shaped protrusions. The geometric protrusions have a flat upper surface or an upper surface that includes a plurality of smaller geometric protrusions formed by recessed gullets.

The intermediate substrate of the chemical mechanical polishing dresser mentioned in the Republic of China Invention Patent Certificate No. I616279 includes a hollow portion, an annular portion surrounding the hollow portion, and at least one protruding ring protruding from the annular portion away from the bottom substrate. The protruding ring includes a plurality of protruding blocks spaced along an annular zone. A diamond film is disposed on the intermediate substrate, and the diamond film forms a plurality of grinding bumps according to the bumps.

Even in the above case, the top surface of the conventional chemical mechanical polishing dresser is improved to have a plurality of non-planar bumps and the bumps are arranged in a specific shape to achieve uniform grinding or cutting rates and enhance removal capability. and other effects. However, in practical applications, the residual debris in the small holes of the polishing pad still cannot be effectively removed, which affects the service life of the chemical mechanical polishing dresser.

The present invention provides a chemical mechanical polishing pad dresser, which can effectively remove impurities or chips from the chemical mechanical polishing pad and improve the service life of the chemical mechanical polishing pad.

The present invention provides a method for manufacturing a chemical mechanical polishing pad dresser, which can effectively remove impurities or chips from a chemical mechanical polishing polishing pad and increase the service life of the chemical mechanical polishing pad dresser.

Other objects and advantages of the present invention can be further understood from the technical features disclosed in the present invention.

The chemical mechanical polishing pad dresser of the present invention comprises: a bottom substrate; an intermediate substrate disposed on the bottom substrate, the intermediate substrate comprising a hollow portion and an annular portion surrounding the hollow portion, the annular portion including multiple a first grinding zone spaced along an annular zone and a plurality of second grinding zones interposed between the first grinding zones, there is a height difference between the first grinding zone and the second grinding zone, the first grinding zone a grinding area extends along a radial direction of the intermediate substrate; and a diamond film is disposed on the intermediate substrate, the diamond film covers the first grinding area and the second grinding area, and the diamond film has a plurality of first grinding areas surface and a plurality of second surfaces, the first surface covers the first grinding area, the second surface covers the second grinding area, the diamond film is formed with a plurality of three-dimensional pattern gathering parts, and the three-dimensional pattern gathering parts are formed in the The first grinding area and the second grinding area; wherein, a plurality of first grinding tips protruding on the first surface and a plurality of second grinding tips protruding on the second surface are formed on the diamond film, the first grinding The grinding tip has a first tip height, the second grinding tip has a second tip height, the first grinding zone has a roughness between 1 μm and 50 μm according to the shape of the first grinding tip, and the first grinding tip has a roughness between 1 μm and 50 μm. The second grinding zone has a roughness between 1 μm and 50 μm according to the shape of the second grinding tip.

The manufacturing method of the chemical mechanical polishing pad dresser of the present invention includes the following steps: providing an intermediate substrate, the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion, and the annular portion includes a plurality of regions along an annular zone A first grinding zone arranged at intervals and a plurality of second grinding zones interposed between the first grinding zones, the first grinding zone and the second grinding zone have a height difference, the first grinding area extends along a radial direction of the intermediate substrate; a diamond film is formed on the intermediate substrate, the diamond film covers the first grinding area and the second grinding area, and the diamond film has A plurality of first surfaces and a plurality of second surfaces, the first surface covers the first grinding area, the second surface covers the second grinding area, the diamond film is formed with a plurality of three-dimensional pattern gathering parts, the three-dimensional pattern gathers The portion is formed in the first grinding zone and the second grinding zone, wherein a plurality of first grinding tips protruding from the first surface and a plurality of second grinding tips protruding from the second surface are formed on the diamond film, The first grinding tip has a first tip height, the second grinding tip has a second tip height, the first surface has a roughness between 1 μm and 50 μm according to the topography of the first grinding tip, The second surface has a roughness between 1 and 50 μm according to the topography of the second grinding tip; and the intermediate substrate is disposed on a bottom substrate.

Therefore, in the chemical mechanical polishing pad dresser of the present invention, a plurality of first grinding tips are formed on the diamond film, and a plurality of second grinding tips are formed on the second grinding zone. Therefore, compared with the prior art, the uniformity of the chemical mechanical polishing pad dresser of the present invention is improved, and when the chemical mechanical polishing pad dresser with good uniformity is used for dressing, even the residual debris in the small holes can be eliminated. Chips can also be removed smoothly, so the removal capability can be improved. Combining the above advantages, the service life of the chemical mechanical polishing dresser of the present invention will be prolonged.

In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

1: Chemical Mechanical Polishing Pad Dresser

10: Bottom substrate

10a: Peripheral part

10b: Annular placement groove

20: Intermediate substrate

21: hollow part

22: Ring part

221: The first grinding zone

221a: First tip

222: Second grinding zone

222a: second tip

201: Bumps

205: Circular substrate

30: Diamond film

301: Grinding bumps

3011: Top Surface

3012: Stereographics

303, 303a, 303b, 303c, 303d: three-dimensional figure gathering part

304: Flat area

31: First Surface

311: First grinding tip

32: Second Surface

321: Second grinding tip

40: Bonding layer

50: Grinding unit

51: Bearing column

52: Grinding particles

53: Abrasive bond layer

D1: The first pitch

D0: width

H1: First tip height

H2: Second tip height

FIG. 1 is a top view of a chemical mechanical polishing pad conditioner according to a first embodiment of the present invention.

Fig. 2A is a schematic cross-sectional view taken along the line A-A' in Fig. 1 .

Fig. 2B is a schematic cross-sectional view taken along the line B-B' in Fig. 1 .

2C is a schematic cross-sectional view of a chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

FIG. 3A is a partial perspective view of FIG. 1 .

3B is a partial perspective view of a chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

4A is a top view of a chemical mechanical polishing pad conditioner according to a second embodiment of the present invention.

Fig. 4B is a schematic cross-sectional view taken along the C-C' direction of Fig. 4A.

5 is a top view of a chemical mechanical polishing pad conditioner according to another aspect of the second embodiment of the present invention.

6 is a top view of a chemical mechanical polishing pad conditioner according to a third embodiment of the present invention.

7 is a schematic diagram of a chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

FIG. 8 is a schematic diagram of a chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

FIG. 9 is a flowchart of a manufacturing method of a chemical mechanical polishing pad conditioner according to an embodiment of the present invention.

The foregoing and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or rear, etc., are only for referring to the directions of the attached drawings. Accordingly, the directional terms used are illustrative and not limiting of the present invention.

first embodiment

Please refer to FIG. 1 in conjunction with FIG. 2A and FIG. 2B, which respectively represent a top view, a schematic cross-sectional view in the direction of A-A', and a schematic cross-sectional view in the direction of B-B' of the chemical mechanical polishing pad dresser 1 according to the first embodiment of the present invention.

The chemical mechanical polishing pad conditioner 1 of the present invention mainly includes a base substrate 10 , an intermediate substrate 20 , and a diamond film 30 . The intermediate substrate 20 is disposed on the bottom substrate 10 , and the diamond film 30 is coated on the intermediate substrate 20 .

The intermediate substrate 20 includes a hollow portion 21 and an annular portion 22 surrounding the hollow portion 21 . The annular portion 22 includes a plurality of first grinding areas 221 spaced apart along an annular area and a plurality of second grinding areas 222 between the first grinding areas 221 . The first grinding zone 221 extends along a radial direction of the intermediate substrate 20 . The first grinding zone 221 includes a plurality of first tips 221a, and the second grinding zone 222 includes a plurality of second tips 222a.

As shown in FIG. 2A and FIG. 2B , in this embodiment, the diamond film 30 is disposed on the intermediate substrate 20 . The diamond film 30 covers the first polishing region 221 and the second polishing region 222 . A plurality of first grinding tips 311 protruding from a first surface 31 are formed on the diamond film 30 . A plurality of second grinding tips 321 protruding from the second surface 32 are formed on the second surface 32 . In this embodiment, the first grinding tip 311 and the second grinding tip 321 are formed by the structure in which the diamond film 30 covers the intermediate substrate 20 . The first grinding tip 311 has a first tip height H1, and the second grinding tip 321 has a second tip height H2. The diamond film 30 is disposed on the intermediate substrate 20 . The diamond film 30 covers the first grinding region 221 . In this embodiment, the first grinding area 221 has a surface roughness between 1 μm and 50 μm according to the topography of the first grinding tip 311 , and the second grinding area 222 has a surface roughness according to the second grinding The topography of the tip 321 has a roughness between 1 μm and 50 μm. Specific structural details will be described in detail below.

In an embodiment of the present invention, the roughness of the first polishing area 221 is greater than, equal to or smaller than the roughness of the second polishing area 222 . In an embodiment of the present invention, the roughness of a single first polishing zone 221 includes at least two or more ranges; the roughness of a single second polishing zone 222 includes at least two or more ranges, for example, a single The roughness of the first grinding area 221 or the single second grinding area 222 may include between 1 μm and 20 μm and between 21 μm and 50 μm. In an embodiment of the present invention, the roughnesses of the first polishing regions 221 may be the same or different from each other, and the roughnesses of the second polishing regions 222 may be the same or different from each other. a grind The roughness of the area 221 or the second grinding area 222 is between 1 μm and 20 μm, and the roughness of the other part of the first grinding area 221 or the second grinding area 222 is between 21 μm and 50 μm. In an embodiment of the present invention, the first tip height H1 may be greater than, equal to or less than the second tip height H2.

In an embodiment of the present invention, the first tip heights H1 of the first grinding tips 311 include at least two or more ranges; the second tip heights H2 of the second grinding tips 321 include at least two or more ranges scope. In an embodiment of the present invention, the first tip heights H1 may be the same or different from each other, and the second tip heights H2 may be the same or different from each other.

In an embodiment of the present invention, the first tip height H1 is between 5 μm and 300 μm. In an embodiment of the present invention, the height H2 of the second tip is between 5 μm and 300 μm.

In an embodiment of the present invention, the height difference between the first polishing region 221 and the second polishing region 222 is between 1 μm and 300 μm. 2C is a schematic cross-sectional view of a chemical mechanical polishing pad dresser according to an embodiment of the present invention. The first grinding zone 221 and the second grinding zone 222 are of the same height, ie, the height difference is 0 μm.

In an embodiment of the present invention, the first polishing region 221 is a bump 201 , the diamond film 30 covers the first polishing region 221 and a plurality of polishing bumps 301 are formed along the bump 201 . The adjacent grinding bumps 301 are separated from each other by a distance, and the distance is 1 to 5 times of a width of the bumps 201 . In the present embodiment, the polishing bumps 301 form an arc relative to a radial direction of the intermediate substrate 20 , as shown in FIG. 1 , in other words, the first polishing area 221 is in the shape of a curved segment when viewed from above. In other embodiments, the shape of the first grinding zone 221 can be trapezoidal, fan-shaped, circular, polygonal or other shapes, and the arrangement of the first grinding zone 221 can be radial or spiral.

In detail, the bottom substrate 10 can be a planar substrate or a non-planar substrate with grooves for accommodating the middle substrate 20 . In this embodiment, as shown in FIG. 1 , the bottom substrate 10 has an annular receiving groove 10 b for receiving the middle substrate 20 . The base substrate 10 suitable for use in the present invention Examples of the material can be stainless steel, metal material, polymer material, ceramic material or a combination thereof. The intermediate substrate 20 is disposed on the base substrate 10 , and the material for forming the intermediate substrate 20 may be a conductive silicon carbide or a non-conductive silicon carbide. In an embodiment of the present invention, the intermediate substrate 20 is a conductive material, and the conductive material includes molybdenum, tungsten, tungsten carbide, or a combination thereof. In another embodiment of the present invention, the intermediate substrate 20 is made of a non-conductive material, and the non-conductive material is silicon or single-crystal aluminum oxide.

In this embodiment, the intermediate substrate 20 includes a hollow portion 21 and an annular portion 22 surrounding the hollow portion 21 . The annular portion 22 is formed with a plurality of bumps 201 by a laser processing method. The bumps 201 are arranged along the annular portion 22 to form a first grinding area 221 . Optionally, the bumps 201 may be centered on the hollow portion 21 to form at least one circle of the first grinding regions 221 . For example, the first grinding zone 221 may be 1 to 20 turns, more preferably the first grinding zone 221 may be 2 to 20 turns. In this embodiment, the first grinding zone 221 of 2 turns is used as an example for illustration. At this time, the bumps 201 of the first circle and the second circle in the adjacent first grinding regions 221 are displaced from each other. In one embodiment of the present invention, the first grinding zone 221 has a number of rings between 2 and 20. In other embodiments, the first grinding zone 221 can also be a single ring. The shape of the bump 201 can be trapezoid, sector, circle, polygon or other shapes. In this embodiment, the bumps 201 are formed by the laser processing method. In other embodiments, the bumps 201 can also be formed by methods such as electrical discharge machining or die casting, which are not particularly limited in the present invention.

In this embodiment, the diamond film 30 is formed by a chemical vapor deposition method. The chemical vapor deposition method may be, for example, filament CVD, plasma assisted chemical vapor deposition (PECVD), microwave plasma chemical vapor deposition (MPCVD) or other similar methods. The bumps 201 of the intermediate substrate 20 are coated on the surface of the intermediate substrate 20 to form a plurality of polishing bumps 301 .

The surface of the intermediate substrate 20 has a patterned structure. In this embodiment, the patterned structure is the topography formed by the aforementioned tips, and the patterned structure and the bumps 201 can be produced in the same process (eg, the laser processing method). The patterned structure is formed on a top surface of the bump 201 and the surface of the annular portion 22 of the intermediate substrate 20 where the bump 201 is not formed.

Referring to FIG. 3A , the diamond film 30 is formed according to the shape of the intermediate substrate 20 , and a top surface 3011 of the grinding bump 301 forms a pair of topography of the patterned structure of the bump 201 , thereby defining the first A grinding tip 311 ; and the second grinding tip 321 is defined between the grinding bumps 301 . In an embodiment of the present invention, the patterned structure includes a plurality of three-dimensional figures 3012 arranged regularly or irregularly. In other embodiments, the three-dimensional figure 3012 can be a plurality of regularly or irregularly arranged triangular pyramids, quadrangular pyramids, pentagonal pyramids, hexagonal pyramids, heptagonal pyramids, octagonal pyramids, triangular prisms, quadrangular prisms, pentagonal prisms, hexagonal prisms, seven prisms A corner column, an octagonal column, a cone, a cylinder, an elliptical cone, an elliptical column or a combination thereof, the top surface 3011 of the polishing bump 301 is given a centerline average roughness (Ra between 2 and 20) through the patterned structure. ). In an embodiment of the present invention, there is a first distance D1 between a center point of the three-dimensional pattern 3012 and the center point of the adjacent three-dimensional pattern 3012 , and the first distance D1 is a distance between the three-dimensional pattern 3012 . 1 to 8.3 times the width D0.

In this embodiment, the base substrate 10 and the middle substrate 20 are bonded through a bonding layer 40 . The bonding layer 40 can be any material with adhesion, such as resin. In other embodiments, the middle substrate 20 can also be fixed on the bottom substrate 10 by a brazing method or a mechanical bonding.

Please refer to FIG. 3A , when the chemical mechanical polishing pad conditioner 1 is viewed from above, the first polishing region 221 formed by a plurality of polishing bumps 301 and the second polishing region 221 formed between the two polishing bumps 301 can be seen The polishing zone 222 has a height difference between the first polishing zone 221 and the second polishing zone 222, wherein the first polishing zone 221 is used as the main part for dressing the polishing pad, and the second polishing zone 222 is used as a row Chip channel, when trimming, even residual chips in small holes can be smoothly Remove, so it can improve the removal ability. On the other hand, when applied to the dressing of soft polishing pads, the surface of the soft polishing pad is not flat. When the soft polishing pad is attached to the dresser 1, the second polishing area 222 with a lower plane can be effectively used as a dressing polishing pad. auxiliary parts.

In this embodiment, the number of the three-dimensional patterns 3012 included in each square millimeter (mm ² ) on the polishing bump 301 ranges from 10 to 250. The arrangement of the three-dimensional pattern 3012 on the top surface 3011 or the second grinding area 222 is not particularly limited. For example, as shown in FIG. 3A , two three-dimensional pattern gathering portions 303 may be formed on the top surface 3011 of the polishing bump 301 . The three-dimensional pattern gathering parts 303 have at least one flat area 304 between each other. The flat area 304 does not contain the grinding bumps 301 . In other embodiments, the top surface 3011 may have two or more of the three-dimensional pattern gathering portions 303 . In other embodiments, the three-dimensional patterns 3012 are not aggregated to form the three-dimensional pattern gathering portion 303 , but are evenly distributed on the top surface 3011 .

Please refer to FIG. 3B . FIG. 3B is a partial three-dimensional schematic diagram of a polishing pad conditioner for chemical mechanical polishing according to an embodiment of the present invention. In this embodiment, the diamond film 30 is formed with three-dimensional pattern gathering portions 303a, 303b, 303c, 303d with different shapes, wherein the three-dimensional pattern gathering portions 303a, 303b are formed in the first grinding region 221, and the three-dimensional pattern gathering portions 303a, 303b The gathering parts 303 c and 303 d are formed in the second grinding area 222 .

In one embodiment, the three-dimensional pattern gathering portions 303a and 303b on the first grinding area 221 are protrusions with different sizes, as shown in FIG. 3B . On the other hand, the three-dimensional pattern gathering portion 303a on the first grinding zone 221 and the three-dimensional pattern gathering portion 303c on the second grinding zone 222 may have the same tip height and/or form the same roughness, that is, the The three-dimensional pattern gathering portions 303a, 303c are the same; the three-dimensional pattern gathering portion 303b on the first grinding zone 221 and the three-dimensional pattern gathering portion 303d on the second grinding zone 222 may have the same tip height and/or form the same The roughness, that is, the three-dimensional figure gathering parts 303b and 303d are the same. Or, on the first grinding zone 221 The three-dimensional pattern gathering portion 303a and the three-dimensional pattern gathering portion 303c on the second grinding zone 222 may have different tip heights and/or form different roughnesses, that is, the three-dimensional pattern gathering portions 303a, 303c are different ; The three-dimensional pattern gathering portion 303b on the first grinding area 221 and the three-dimensional pattern gathering portion 303d on the second grinding area 222 may be different tip heights and/or form different roughnesses, that is, the three-dimensional image The shape gathering parts 303b and 303d are different.

Second Embodiment

Please refer to FIG. 4A . FIG. 4A shows a second embodiment of the chemical mechanical polishing pad conditioner 1 of the present invention. In the second embodiment, the structure of the chemical mechanical polishing pad dresser 1 is substantially the same as that of the first embodiment described above, except that it further includes a plurality of grinding units 50 .

Please also refer to FIG. 4B, which is a schematic cross-sectional view taken along the C-C' direction of FIG. 4A. In the chemical mechanical polishing pad dresser 1 according to the second embodiment of the present invention, the grinding unit 50 includes a bearing column 51 , an abrasive particle 52 disposed on the bearing column 51 , and an abrasive particle 52 for combining the bearing column 51 with the bearing column 51 . An abrasive bonding layer 53 of the abrasive particles 52 . In the second embodiment, the grinding unit 50 is disposed at a position of the bottom substrate 10 corresponding to the hollow portion 21 of the intermediate substrate 20 . Please refer to FIG. 5 . FIG. 5 is a top view of a chemical mechanical polishing pad conditioner 1 according to another aspect of the second embodiment of the present invention. The polishing unit 50 is disposed on a peripheral portion 10 a of the base substrate 10 .

6 is a schematic diagram of a chemical mechanical polishing pad conditioner according to an embodiment of the present invention. In this embodiment, the annular portion 22 includes a plurality of combined segments 22a, 22b, 22c, 22d that are spliced adjacent to each other. Compared with a single annular structure, multiple combined segments are easier to mass-produce, which can greatly reduce costs and improve production efficiency. In an embodiment of the present invention, the number of the combination segments is between 2 and 6, and in a preferred embodiment, the number of the combination segments is 4.

7 is a schematic diagram of a chemical mechanical polishing pad conditioner according to an embodiment of the present invention. In this embodiment, the first grinding area 221 (the bump 201 ) of the annular portion 22 is sector-shaped and equal to each other Pitch arrangement; FIG. 8 is a schematic diagram of a chemical mechanical polishing pad dresser according to an embodiment of the present invention. In this embodiment, the first grinding region 221 (the bump 201 ) of the annular portion 22 is elongated and arranged radially, whereby the chemical mechanical polishing pad dresser 1 can have different grinding Effect. In other embodiments, the bumps 201 can be configured as a combination of more different shapes, and the arrangement can be designed such as concentric rings, discontinuous or staggered concentric rings, spirals, discontinuous spirals, rectangles, discontinuous rectangles, etc. .

In conjunction with the above figures and referring to FIG. 9 , FIG. 9 is a flow chart of the manufacturing method of the chemical mechanical polishing pad dresser 1 . The manufacturing method of the chemical mechanical polishing polishing pad conditioner 1 comprises the following steps:

( S1 ) Provide an intermediate substrate 20 , the intermediate substrate 20 includes a hollow portion 21 and an annular portion 22 surrounding the hollow portion 21 .

(S2) forming a diamond film 30 on the intermediate substrate 20, the diamond film 30 covers the first grinding area 221 and the second grinding area 222, wherein the diamond film 30 is formed with protrusions on the first surface 31 A plurality of first grinding tips 311 and a plurality of second grinding tips 321 protruding from the second surface 32 .

In an embodiment of the present invention, the annular portion 22 is provided with a plurality of bumps 201 by an energy machining method (eg, an electrical discharge machining method, a laser machining method) or a die casting method. For example, when a conductive material is used as the intermediate substrate, the electrical discharge machining method can be used in conjunction. When a non-conductive material is used as the intermediate substrate, the bump 201 can be produced on the annular portion 22 by using the laser processing method. Besides, a die casting method can also be used to obtain the aforementioned structure directly during forming. For example, the desired shape is extruded from powder and then sintered.

(S3) Disposing the intermediate substrate 20 on a base substrate 10 .

To sum up, in the chemical mechanical polishing pad dresser 1 of the present invention, a plurality of first grinding tips 311 are formed on the bump 201 , and a plurality of second grinding tips 321 are formed on the second grinding region 222 . Therefore, compared with the prior art, the uniformity of the chemical mechanical polishing pad dresser 1 of the present invention is improved, and when the chemical mechanical polishing pad dresser with good uniformity is used for dressing, even the residues in the small holes can be eliminated. Chips can also be removed smoothly, so the removal capability can be improved. Combining the above advantages, the service life of the chemical mechanical polishing dresser of the present invention will be prolonged.

The present invention has been described in detail above, but the above is only a preferred embodiment of the present invention, and should not limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made according to the scope of the application of the present invention should still fall within the scope of the patent of the present invention.

10: Bottom substrate

20: Intermediate substrate

221: The first grinding zone

221a: First tip

222: Second grinding zone

222a: second tip

201: Bumps

30: Diamond film

301: Grinding bumps

31: First Surface

311: First grinding tip

32: Second Surface

321: Second grinding tip

40: Bonding layer

H1: First tip height

H2: Second tip height

Claims (31)

A chemical mechanical polishing pad dresser, comprising: a bottom substrate; an intermediate substrate disposed on the bottom substrate, the intermediate substrate comprising a hollow portion and an annular portion surrounding the hollow portion, the annular portion comprising a plurality of edges along the A first grinding zone arranged in an annular zone and a plurality of second grinding zones interposed between the first grinding zones, there is a height difference between the first grinding zone and the second grinding zone, the first grinding zone The area extends along a radial direction of the intermediate substrate; and a diamond film is disposed on the intermediate substrate, the diamond film covers the first grinding area and the second grinding area, and the diamond film has a plurality of first surfaces and A plurality of second surfaces, the first surface covers the first grinding area, the second surface covers the second grinding area, the diamond film is formed with a plurality of three-dimensional pattern gathering parts, and the three-dimensional pattern gathering parts are formed on the first A grinding zone and the second grinding zone; wherein, a plurality of first grinding tips protruding from the first surface and a plurality of second grinding tips protruding from the second surface are formed on the diamond film, and the first grinding tips have a first tip height, the second grinding tip has a second tip height, the first grinding zone has a roughness between 1 μm and 50 μm according to the topography of the first grinding tip, the second grinding zone The second grinding tip has a roughness between 1 μm and 50 μm according to the topography of the second grinding tip. The chemical mechanical polishing pad conditioner of claim 1, wherein the roughness of the first grinding zone is greater than, equal to, or less than the roughness of the second grinding zone. The chemical mechanical polishing pad conditioner as claimed in claim 1, wherein the roughness of the single first polishing zone includes at least two or more ranges. The chemical mechanical polishing pad conditioner of claim 1, wherein the roughness of the single second polishing zone includes at least two or more ranges. The chemical mechanical polishing pad conditioner of claim 1, wherein the first tip height is greater than, equal to, or less than the second tip height. The chemical mechanical polishing pad conditioner of claim 1, wherein the first grinding tips comprise at least two or more sets of the first tip heights. The chemical mechanical polishing pad conditioner of claim 1, wherein the second grinding tips comprise at least two or more second tip heights. The chemical mechanical polishing pad conditioner of claim 1, wherein the first tip height is between 5 μm and 300 μm. The chemical mechanical polishing pad conditioner of claim 1, wherein the second tip height is between 5 μm and 300 μm. The chemical mechanical polishing pad dresser according to claim 1, wherein the first grinding zone and the second grinding zone are of the same height. The chemical mechanical polishing pad dresser according to claim 1, wherein the height difference between the first grinding zone and the second grinding zone is between 1 μm and 300 μm. The chemical mechanical polishing pad conditioner of claim 1, wherein the shape of the first polishing zone includes a trapezoid, a sector, a circle or a polygon. The chemical mechanical polishing pad dresser of claim 1, wherein the first polishing area is a bump, the diamond film covers the first polishing area and conforms to the bump to form a plurality of polishing bumps, adjacent to each other. The grinding bumps are spaced apart from each other by a distance, and the distance is 1 to 5 times the width of one of the bumps. The chemical mechanical polishing pad dresser as claimed in claim 1, wherein the first polishing area is a bump, the diamond film covers the first polishing area and conforms to the bump to form a plurality of polishing bumps, the polishing The bumps form an arc relative to the radial direction of the intermediate substrate. The chemical mechanical polishing pad dresser as claimed in claim 1, wherein the first polishing area is a bump, the diamond film covers the first polishing area and conforms to the bump to form a plurality of polishing bumps, the polishing The bump includes a top surface and a plurality of three-dimensional figures formed on the top surface and arranged regularly or irregularly. The chemical mechanical polishing pad conditioner of claim 15, wherein the number of the three-dimensional patterns per square millimeter on the top surface of each of the polishing bumps is between 10 and 250. The chemical mechanical polishing pad conditioner as claimed in claim 15, wherein a first distance exists between the center points of the adjacent three-dimensional figures, and the first distance is 1 to 8.3 times a width of the three-dimensional figures. The chemical mechanical polishing pad conditioner of claim 1, wherein the intermediate substrate is a conductive material selected from the group consisting of molybdenum, tungsten and tungsten carbide. The chemical mechanical polishing pad conditioner of claim 1, wherein the intermediate substrate is a non-conductive material, and the non-conductive material is silicon or single-crystal alumina. The chemical mechanical polishing pad conditioner as claimed in claim 1, wherein the material of the intermediate substrate is a conductive silicon carbide or a non-conductive silicon carbide. The chemical mechanical polishing pad conditioner of claim 1, further comprising a bonding layer disposed between the base substrate and the intermediate substrate. The chemical mechanical polishing pad conditioner of claim 1, wherein the first polishing zone is a single ring. The chemical mechanical polishing pad conditioner of claim 1, wherein the first polishing zone has a number of turns between 2 and 20. The chemical mechanical polishing pad conditioner as claimed in claim 23, wherein the adjacent first polishing zones are displaced from each other. The chemical mechanical polishing pad conditioner of claim 1, wherein the bottom substrate is a planar substrate, and the intermediate substrate is disposed on the planar substrate. The chemical mechanical polishing pad conditioner of claim 1, wherein the bottom substrate has an annular accommodating groove for accommodating the middle substrate. The chemical mechanical polishing pad conditioner of claim 1, wherein the annular portion includes a plurality of composite segments spliced adjacent to each other. The chemical mechanical polishing pad conditioner of claim 27, wherein the number of the combined segments is between 2 and 6. The chemical mechanical polishing pad conditioner of claim 1, wherein the intermediate substrate is a circular substrate. The chemical mechanical polishing pad dresser according to claim 1, further comprising a plurality of grinding units, the grinding units include a bearing column, an abrasive particle arranged on the bearing column, and used to combine the bearing column and the grinding unit An abrasive bonding layer of particles. A method for manufacturing a chemical mechanical polishing pad dresser, comprising the steps of: providing an intermediate substrate, the intermediate substrate comprising a hollow portion and an annular portion surrounding the hollow portion, the annular portion comprising a plurality of spaced apart along an annular area a first grinding zone and a plurality of second grinding zones between the first grinding zones, there is a height difference between the first grinding zone and the second grinding zone, the first grinding zone is along the intermediate substrate a radial extension; a diamond film is formed on the intermediate substrate, the diamond film covers the first grinding area and the second grinding area, the diamond film has a plurality of first surfaces and a plurality of second surfaces, the The first surface covers the first grinding area, the second surface covers the second grinding area, the diamond film is formed with a plurality of three-dimensional pattern gathering parts, and the three-dimensional pattern gathering parts are formed in the first grinding area and the second grinding area area where the diamond film A plurality of first grinding tips protruding from the first surface and a plurality of second grinding tips protruding from the second surface are formed, the first grinding tips have a first tip height, and the second grinding tips have a first The height of the second tip, the first surface has a roughness ranging from 1 μm to 50 μm according to the topography of the first grinding tip, and the second surface has a roughness ranging from 1 μm to 50 μm based on the topography of the second grinding tip roughness between; and disposing the intermediate substrate on a bottom substrate.

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