1276509 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種砂紙，且特別是有關於一種用以 研磨載具膜之砂紙，其中載具膜係使用於化學機械研磨製 程中承載半導體晶圓。 【先前技術】 當半導體製程越來越精進，晶圓上單位面積所能製作 的電晶體數量越來越多，整個互補式金氧半導體 (Complementary Metal_Oxide Semiconductor; CMOS)的製程 與積體電路（Integrated Circuit; IC)的結構也越來越複雜’換 言之，構成積體電路的材料與層數都大幅增加。一旦晶圓 表面因互補式金氧半導體的各層結構而變得不平坦後，後 續製程步驟之執行難度均將隨著晶圓表面平坦度的惡化而 增加。 因此，目前是以化學機械研磨（Chemical Mechanical Polish; CMP)設備來解決晶圓表面不平坦的問題。一般而 言，化學機械研磨設備包含一晶圓載具頭（Carrier Head)， 於此晶圓載具頭上裝設有一載具膜，用以承載一半導體晶 圓並使其面對一濕性的研磨表面，例如：研磨墊（Polishing Pad)，而不論是研磨墊或晶圓載具頭都是不斷地旋轉。晶 圓載具頭係藉由一壓縮氣體系統或類似的裝置以提供力量 往下壓在研磨表面之上，其中使晶圓載具頭往下壓在研磨 墊上的力量可依需要作調整。 一般的化學機械研磨製程係使用彈性材料作為載具膜 5 1276509 來承載半導體晶圓，用以使整個半導體晶圓表面承受均句 的壓力。傳統上載具膜係由以下的步驟處理：首先，將安 褒有載具膜的晶圓載具，以安裝有載具膜的一面朝下，反 壓於-圓形砂紙上，且圓形砂紙為放置於—平台上。再來， 使平台旋轉以利用砂紙研磨載具膜。其中，圓形砂紙包含 -同心圓環圖案’此同心圓環的表面係為粗糙表面，而同 心圓環以外的區域均以刀片將表面顆粒去除。換句話說， 錢以同心圓環圖案研磨載具臈，同心圓環以外的區域則 • 沒有研磨效果。 然而，由以上方法所處理之載具膜，其表面形狀不一， 因此易影響後續化學機械研磨製程的製造良率。一般而 言，使用表面形狀不良之載具膜於化學機械研磨製程中承 載半導體晶圓，則研磨後之半導體晶圓表面之中央區往往 研磨過度，邊緣區卻研磨不足。此外，使用傳統方法來處 理載具膜所需要的研磨時間過長，故易造成載具膜厚度不 足，而縮短其使用壽命。 參 【發明内容】 因此本發明之一目的就是在提供一種砂紙，用以研磨 載具膜，使載具膜擁有較佳的表面剖面形狀，並應用至化 學機械研磨裝置。 本發明之另一目的是在於提供一種化學機械研磨製 程’使研磨後之半導體晶圓擁有較佳的研磨表面。 根據本發明之上述目的，提出一種砂紙，用以研磨載 具膜’使載具膜擁有較佳的剖面輪廓，其中載具膜係安裝 6 !276509 於化學機械研磨裝置中的載台上，用以承載半導體晶圓。 此砂紙包含：一基底、一中心保留區與複數個研磨區，其 中研磨區係放射狀地位於基底上，且每一研磨區的大小係 為相等。而中心保留區亦位於基底上，且為平坦表面。每 研磨區包含一内保留區、一外保留區與一粗糖表面區。 其中，内保留區與粗縫表面區係與中心保留區鄰接。藉由 内保留區、外保留區與粗糙表面區大小可調整載具膜的表 面形狀。 依照本發明之一較佳實施例，基底更包含一圓形軌 跡’而此圓形執跡係為使用本發明之砂紙以研磨載具膜 時，載具膜的中心於基底上的運動執跡。此外，内保留區 係位於圓形軌跡内側，且徑向地向基底之圓心擴展，而外 保留區係位於圓形軌跡外側，且徑向地向基底之周界擴展。 根據本發明之上述目的，提出一種化學機械研磨製 程，包括提供一載台，載台上並安裝有經本發明之砂紙研 磨後之載具膜。利用此載具膜承載一半導體晶圓於載台 上，並將安裝有半導體晶圓之載台，以半導體晶圓朝下的 方式反壓在一研磨平台上。接著，旋轉此研磨平台以研磨 半導體晶圓。藉由載具膜的優良表面形狀，可使半導體晶 圓於研磨時所承受的壓力大致均勻，進而使研磨後的半導 體晶圓擁有較佳的研磨均勻度。 由上述可知，應用本發明之砂紙將可穩定製造出表面 剖面形狀優良的載具膜。此外，半導體晶圓若經使用此載 具膜之化學機械研磨製程研磨後，其將獲得研磨均勻之表 面。再者，應用本發明之砂紙所製造出的載具膜擁有較長 7 1276509 之使用壽命。 【實施方式】 本發明之較佳實施例將在隨後被詳細地討論。然而， 值得注意得是，本發明提供了許多可實行的概念，並且可 以根據特定的組合變化具體化此概念。以下所討論的幾個 實施例僅僅是以特定的方式來闡述本發明的使用與製造， 且此實施例並不限制本發明的範圍。 • 參照第1圖，其繪示依照本發明之砂紙的一較佳實施 例之俯視圖。此砂紙100包含一圓形基底120、一中心保留 區150與複數個研磨區200(如第1圖中虛線部分）。其中， 中心保留區150與複數個研磨區200均位於圓形基底120 上，且中心保留區150係為平坦表面。研磨區200包含一 内保留區210、一外保留區220與一粗糙表面區230。在本 實施例中，砂紙100包含十六個相同大小的研磨區2〇〇，且 放射狀地平分於圓形基底120上除中心保留區15〇以外的 馨區域（換言之，研磨區200之周界240、250係位於將圓形 基底120十六等分之等分線上）。但只要不違背本發明之精 神，砂紙亦可包含更多或更少的研磨區。粗糙表面區23〇 包含複數個研磨顆粒，用以研磨載具膜。在一實施例中， 中心保留區150為圓形，且位於基底120中心。 圓形基底120包含一圓形軌跡11〇，其中圓形執跡 係位於圓形基底120上。此外，研磨區200之内保留區210 係位於圓形執跡110内側，而研磨區200之外保留區220 係位於圓形軌跡11〇外側。 8 1276509 研磨區200之内保留區210係自圓形執跡110與研磨 區200的周界240之交點260徑向地向内擴展，且與中心 保留區150的周界鄰接。内保留區210的形狀則係由圓形 軌跡110徑向地向内擴展至需要的大小，使用者可藉由内 保留區210的大小來調整載具膜之表面形狀與剖面深度。 當内保留區210的面積越大，則研磨區2〇〇中的粗輪表面 區230面積相對越小，以此研磨載具膜後之剖面深度會越 淺。此外，内保留區端點212、214係位於研磨區200之内 側周界270上。其中，内保留區端點212係較佳地位於研 磨區200之周界240與内侧周界270之交點上，且内保留 區端點214係較佳地位於研磨區2〇〇之周界240與周界250 沿著内側周界270的中心點上。在一實施例中，研磨區2〇〇 之内側周界270與中心保留區260之周界重疊。 研磨區200之外保留區220的形狀係由圓形執跡110 徑向地向外擴展至需要的大小，使用者可藉由外保留區22〇 的大小以調整載具膜之表面形狀與剖面深度。當外保留區 220的面積越大，則研磨區2〇〇中的粗链表面區230面積相 對越小，以此研磨載具膜後之剖面深度會越淺。再者，外 保留區220係自圓形軌跡11 〇與研磨區2〇〇的周界240之 交點260徑向地向外擴展，且此外保留區22〇係擴展至研 磨區200之外側周界280。此外，外保留區端點222、224 係位於外側周界280上。其中，外保留區端點222係較佳 地位於研磨區200之周界240與外侧周界280之交點上， 且外保留區端點224係較佳地位於研磨區2〇〇之周界240 與周界250沿著外側周界280之中心點上。 9 1276509 參照第2圖，其繪示本發明之一較佳實施例，其用以 研磨載具膜時之側視圖。首先，將安裝有載具膜3〇〇之載 具膜載台400以載具膜300的臈面向下的方式反壓於一已 放置砂紙100之平台上，且載具膜载台4〇〇的另一端係轉 動地連接於一機台500上。接著，旋轉平台以利用砂紙1〇〇 研磨載具膜300。在一較佳實施例中，旋轉平台的轉速係為 每分鐘35至40轉，研磨時間係為2至3分鐘。砂紙1〇〇 之粗糙表面區230的研磨顆粒較佳地係為6〇微米。在另一 • 實施例中，在以砂紙處理载具膜300後，更可製備另 一具有不同粗糙度之砂紙，例如研磨顆粒為50微米，將其 製作成與砂紙100相同之圖案，然後再利用此砂紙來修飾 載具膜300之表面。 其中，圓形軌跡110係為使用第丨圖之較佳實施例之 砂紙100以研磨載具膜300時，載具膜3〇〇的中心於圓形 基底120上的運動軌跡。因此，載具膜3〇〇的中心於研磨 時接文研磨時間最長，也就可以確保載.具膜3〇〇的中心較 翁邊緣低，使載具膜3〇〇擁有較佳的表面形狀及剖面深度。 士第3目戶斤示，II由本發明之方法來處理載具膜，可控制 加工後的剖面深度，並得到一左右對稱之表面形狀。 參照第3圖，其繪示經本發明之較佳實施例之載具膜 研磨砂紙研磨後之載具膜表面剖面形狀，其係為對載具膜 中央對稱的圓弧曲線，例如點B與點D係為等高。此外， 載具膜中央C約較邊緣A、E低4微米至5微米。 、在之後的化學機械研磨製程中，可利用已處理載具膜 之載〇來承載一半導體晶圓，並將半導體晶圓以上表面朝 1276509 下的方式反壓於一研磨平台上。然後，旋轉研磨平台以研 磨半導體晶圓。藉由載具膜優良的表面形狀，使半導體晶 圓於化學機械研磨製程中所承受的壓力大致均等，進而使 研磨後之半導體晶圓擁有較佳的表面研磨度。 由上述本發明較佳實施例可知，應用本發明之砂紙研 磨後的載具膜將擁有較佳的表面剖面形狀，且此載具膜也 將擁有較長的使用壽命。此外，若將此表面剖面形狀優良 的載具膜應用於後續化學機械研磨製程中，則經由此化學 _ 機械研磨製程研磨後的半導體晶圓將擁有較佳的表面研磨 均勻度。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍内，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 _ 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂’所附圖式之詳細說明如下： 第1圖係繪示依照本發明之砂紙的一較佳實施例之俯 視圖； 第2圖係繪示本發明之砂紙的一較佳實施例，其用以 研磨載具膜時之侧視圖；以及 第3圖係繪示應用本發明之砂紙以研磨載具膜後，載 具膜之剖面輪廓圖。 11 1276509 【主要元件符號說明】 100 :砂紙 110 :圓形執跡 120 :圓形基底 150 :中心保留區 200 :研磨區 210 :内保留區 212 :内保留區端點 214 :内保留區端點 220 :外保留區 222 :外保留區端點 224 :外保留區端點 230 :粗糙表面區 240 •周界 250 :周界 260 :交點 270 :内側周界 280 :外側周界 300 :載具膜 400 :載具膜載台 500 :機台 A : 載具膜邊緣 B :點 C ·· 載具膜中央 D ··點 E ： 載具膜邊緣 121276509 IX. Description of the Invention: [Technical Field] The present invention relates to a sandpaper, and more particularly to a sandpaper for grinding a carrier film, wherein the carrier film is used in a chemical mechanical polishing process to carry a semiconductor Wafer. [Prior Art] As the semiconductor process becomes more and more sophisticated, the number of transistors that can be fabricated per unit area on the wafer is increasing, and the process and integrated circuit of the complementary metal oxide semiconductor (CMOS) are integrated. The structure of Circuit; IC) is also becoming more and more complex. In other words, the materials and layers that make up the integrated circuit are greatly increased. Once the wafer surface becomes uneven due to the various layers of the complementary MOS, the difficulty of performing the subsequent processing steps will increase as the wafer surface flatness deteriorates. Therefore, the problem of uneven wafer surface is currently solved by a chemical mechanical polishing (CMP) device. In general, a chemical mechanical polishing apparatus includes a carrier head on which a carrier film is mounted to carry a semiconductor wafer and face a wet abrasive surface. For example, a polishing pad, whether the polishing pad or the wafer carrier head is constantly rotating. The wafer carrier head is forced down onto the abrasive surface by a compressed gas system or the like, wherein the force of pressing the wafer carrier head down on the polishing pad can be adjusted as needed. A typical CMP process uses an elastomeric material as the carrier film 5 1276509 to carry the semiconductor wafer to withstand the pressure of the entire semiconductor wafer surface. The conventional uploading film is processed by the following steps: First, the wafer carrier carrying the film is mounted with the side of the carrier film facing down, back pressed on the -round sandpaper, and circular sandpaper For placement on the platform. Again, the platform is rotated to grind the carrier film with sandpaper. Among them, the circular sandpaper contains a concentric ring pattern. The surface of the concentric ring is a rough surface, and the area other than the concentric ring is the blade to remove the surface particles. In other words, the money grinds the carrier in a concentric ring pattern, and the area outside the concentric ring • has no grinding effect. However, the carrier film treated by the above method has a different surface shape and thus easily affects the manufacturing yield of the subsequent chemical mechanical polishing process. In general, when a carrier film having a poor surface shape is used to carry a semiconductor wafer in a chemical mechanical polishing process, the central portion of the surface of the semiconductor wafer after polishing is excessively ground, and the edge region is insufficiently ground. In addition, the conventional method for processing the carrier film requires too long a grinding time, so that the carrier film thickness is insufficient and the service life is shortened. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a sandpaper for grinding a carrier film such that the carrier film has a preferred surface profile and is applied to a chemical mechanical polishing apparatus. Another object of the present invention is to provide a chemical mechanical polishing process that provides a preferred abrasive surface for a polished semiconductor wafer. In accordance with the above objects of the present invention, a sandpaper for polishing a carrier film is provided to provide a preferred profile of the carrier film, wherein the carrier film is mounted on a stage in a chemical mechanical polishing apparatus. To carry semiconductor wafers. The sandpaper comprises: a substrate, a central retention zone and a plurality of abrasive zones, wherein the abrasive zones are radially located on the substrate, and each of the abrasive zones is of equal size. The central retention zone is also located on the substrate and is a flat surface. Each of the grinding zones includes an inner retention zone, an outer retention zone and a raw sugar surface zone. Wherein, the inner reserved area and the rough surface area are adjacent to the central reserved area. The surface shape of the carrier film can be adjusted by the size of the inner retention zone, the outer retention zone and the rough surface zone. According to a preferred embodiment of the present invention, the substrate further comprises a circular track' and the circular track is the movement of the center of the carrier film on the substrate when the sandpaper of the present invention is used to grind the carrier film. . In addition, the inner retention zone is located inside the circular trajectory and extends radially toward the center of the base, while the outer retention zone is located outside the circular trajectory and radially extends toward the perimeter of the substrate. In accordance with the above objects of the present invention, a chemical mechanical polishing process is provided which includes providing a stage on which a carrier film which has been ground by the sandpaper of the present invention is mounted. The carrier film is used to carry a semiconductor wafer on the stage, and the stage on which the semiconductor wafer is mounted is pressed back on a polishing platform with the semiconductor wafer facing downward. Next, the polishing platform is rotated to polish the semiconductor wafer. By virtue of the excellent surface shape of the carrier film, the pressure applied to the semiconductor wafer during polishing can be made substantially uniform, thereby providing better polishing uniformity of the polished semiconductor wafer. As apparent from the above, the application of the sandpaper of the present invention makes it possible to stably produce a carrier film having an excellent surface cross-sectional shape. In addition, if the semiconductor wafer is ground by a chemical mechanical polishing process using the carrier film, it will obtain a uniform surface. Furthermore, the carrier film produced by applying the sandpaper of the present invention has a long service life of 7 1276509. [Embodiment] A preferred embodiment of the present invention will be discussed in detail later. However, it is noted that the present invention provides many concepts that are practicable and that the concept can be embodied in terms of specific combinations. The several embodiments discussed below are merely illustrative of the use and manufacture of the present invention in a particular manner, and this embodiment does not limit the scope of the invention. Referring to Figure 1, there is shown a top plan view of a preferred embodiment of a sandpaper in accordance with the present invention. The sandpaper 100 comprises a circular base 120, a central retention zone 150 and a plurality of abrasive zones 200 (as indicated by the dashed lines in Figure 1). The central retention zone 150 and the plurality of abrasive zones 200 are both located on the circular base 120, and the central retention zone 150 is a flat surface. The abrasive zone 200 includes an inner retention zone 210, an outer retention zone 220 and a rough surface zone 230. In the present embodiment, the sandpaper 100 includes sixteen abrasive regions 2 of the same size, and is radially equally divided on the circular substrate 120 except for the central retention region 15〇 (in other words, the periphery of the polishing region 200) The boundaries 240, 250 are located on the bisector of the sixteenth division of the circular base 120). However, as long as the spirit of the invention is not violated, the sandpaper may contain more or less abrasive zones. The rough surface area 23〇 contains a plurality of abrasive particles for grinding the carrier film. In an embodiment, the central retention zone 150 is circular and located at the center of the substrate 120. The circular base 120 includes a circular track 11〇 in which the circular footprint is located on the circular base 120. In addition, the retention zone 210 within the abrasive zone 200 is located inside the circular trace 110, while the retention zone 220 outside of the abrasive zone 200 is located outside the circular track 11〇. 8 1276509 The retention zone 210 within the abrasive zone 200 extends radially inward from the intersection 260 of the circular trace 110 and the perimeter 240 of the abrasive zone 200 and abuts the perimeter of the central retention zone 150. The shape of the inner retaining region 210 is radially inwardly expanded by the circular trajectory 110 to a desired size, and the user can adjust the surface shape and the depth of the profile of the carrier film by the size of the inner retaining region 210. When the area of the inner reserved area 210 is larger, the area of the rough wheel surface area 230 in the grinding area 2 is relatively smaller, so that the depth of the section after the carrier film is polished is shallower. In addition, the inner retention zone endpoints 212, 214 are located on the inner perimeter 270 of the abrasive zone 200. Wherein the inner retention zone endpoint 212 is preferably located at the intersection of the perimeter 240 and the inner perimeter 270 of the abrasive zone 200, and the inner retention zone endpoint 214 is preferably located at the perimeter of the abrasive zone 2〇〇 240 With the perimeter 250 along the center point of the inner perimeter 270. In one embodiment, the inner perimeter 270 of the abrasive zone 2 重叠 overlaps the perimeter of the central retention zone 260. The shape of the remaining area 220 outside the grinding zone 200 is radially outwardly expanded by the circular footprint 110 to a desired size, and the user can adjust the surface shape and profile of the carrier film by the size of the outer retention zone 22〇. depth. When the area of the outer reserved area 220 is larger, the area of the thick chain surface area 230 in the grinding area 2 is relatively smaller, so that the depth of the section after the carrier film is polished is shallower. Moreover, the outer retention zone 220 extends radially outward from the intersection 260 of the circular trajectory 11 〇 and the perimeter 240 of the abrasive zone 2 , and further the retention zone 22 extends to the outer perimeter of the abrasive zone 200 280. In addition, the outer retention zone endpoints 222, 224 are located on the outer perimeter 280. Wherein, the outer retention zone end point 222 is preferably located at the intersection of the perimeter 240 and the outer perimeter 280 of the abrasive zone 200, and the outer retention zone end point 224 is preferably located at the perimeter 240 of the abrasive zone 2〇〇 With the perimeter 250 along the center of the outer perimeter 280. 9 1276509 Referring to Figure 2, there is shown a side view of a preferred embodiment of the present invention for polishing a carrier film. First, the carrier film stage 400 on which the carrier film 3 is mounted is pressed against the platform on which the sandpaper 100 has been placed with the cymbal of the carrier film 300 facing downward, and the carrier film stage 4 〇〇 The other end is rotatably coupled to a machine 500. Next, the stage is rotated to grind the carrier film 300 with the sandpaper 1〇〇. In a preferred embodiment, the rotational speed of the rotating platform is 35 to 40 revolutions per minute and the grinding time is 2 to 3 minutes. The abrasive particles of the rough surface area 230 of the sandpaper 1 are preferably 6 microns. In another embodiment, after the carrier film 300 is treated with sandpaper, another sandpaper having different roughness can be prepared, for example, the abrasive particles are 50 micrometers, which are formed into the same pattern as the sandpaper 100, and then This sandpaper is used to modify the surface of the carrier film 300. The circular trajectory 110 is a trajectory of the center of the carrier film 3 于 on the circular base 120 when the sandpaper 100 of the preferred embodiment of the drawings is used to polish the carrier film 300. Therefore, the center of the carrier film 3〇〇 has the longest grinding time during the grinding, which ensures that the center of the carrier film is lower than the edge of the film, so that the carrier film 3 has a better surface shape. And the depth of the section. According to the method of the present invention, the carrier film is processed by the method of the present invention, and the depth of the profile after processing can be controlled, and a symmetrical surface shape can be obtained. Referring to FIG. 3, there is shown a cross-sectional shape of a carrier film after polishing a carrier film abrasive paper according to a preferred embodiment of the present invention, which is a circular arc curve symmetrical to the center of the carrier film, such as point B and point. The D system is of equal height. In addition, the center C of the carrier film is about 4 microns to 5 microns lower than the edges A, E. In the subsequent chemical mechanical polishing process, the semiconductor wafer can be carried by the carrier of the processed carrier film, and the upper surface of the semiconductor wafer is pressed against a polishing platform in a manner of being lower than 1276509. The polishing platform is then rotated to grind the semiconductor wafer. By the excellent surface shape of the carrier film, the pressure of the semiconductor crystal in the chemical mechanical polishing process is substantially equal, so that the polished semiconductor wafer has a better surface polishing degree. It will be apparent from the above-described preferred embodiments of the present invention that the carrier film after application of the sandpaper of the present invention will have a preferred surface cross-sectional shape, and the carrier film will also have a long service life. In addition, if the carrier film having a good surface profile is applied to the subsequent chemical mechanical polishing process, the semiconductor wafer polished by the chemical mechanical polishing process will have better surface polishing uniformity. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; a top view of a preferred embodiment; a second embodiment of a preferred embodiment of the sandpaper of the present invention for polishing a carrier film; and a third drawing showing the application of the sandpaper of the present invention The profile of the carrier film after grinding the carrier film. 11 1276509 [Description of main component symbols] 100: sandpaper 110: circular trace 120: circular base 150: central reserved area 200: abrasive zone 210: inner reserved zone 212: inner reserved zone end point 214: inner reserved zone end point 220: outer reserved area 222: outer reserved area end point 224: outer reserved area end point 230: rough surface area 240 • perimeter 250: perimeter 260: intersection 270: inner perimeter 280: outer perimeter 300: carrier film 400: Carrier film stage 500: Machine A: Carrier film edge B: Point C ·· Carrier film center D ··Point E: Carrier film edge 12