TWI681843B - Method for conditioning polishing pad - Google Patents

Abstract

A polishing pad conditioner, manufacturing method thereof and method for conditioning polishing pad are provided in the instant disclosure. The polishing pad conditioner includes a holder, a first conditioning assembly, and a second conditioning assembly. The holder has a connecting surface and a bottom surface opposite thereto, and the first and second conditioning assemblies are disposed on the connecting surface. The first conditioning assembly has a first polishing structure having a plurality of first polishing protruding portions, and the second conditioning unit has a second polishing structure having a plurality of second polishing protruding portions. The second polishing structure has a greater material removal rate for conditioning the polishing pad than that of the first polishing structure. The height of the tip of the second polishing protruding portion relative to the bottom surface is less than the height of the tip of the first polishing protruding portion relative to the bottom surface.

Description

Polishing pad trimming method

The invention relates to a polishing pad dressing device, a manufacturing method and a polishing pad dressing method, in particular to a polishing pad dressing device, a manufacturing method of a polishing pad dressing device and a polishing pad dressing method applied to a chemical mechanical polishing process.

Chemical mechanical polishing is currently one of the most commonly used methods for planarizing the surface of semiconductor wafers. In the chemical mechanical polishing process, a polishing pad and a polishing liquid are usually used to polish the surface of the semiconductor wafer. In the chemical mechanical polishing process, a trimmer is used to trim the surface of the polishing pad, remove the waste generated when polishing the wafer, and restore the roughness of the polishing pad to maintain the stability of the polishing quality.

The existing dresser usually includes a substrate and a diamond polishing layer disposed on one side of the substrate. As the size of the wafer shrinks, the requirement for flatness of the wafer surface becomes higher and higher. Therefore, the surface roughness of the polishing pad cannot be too high, usually less than 8 microns (μm), preferably less than 5 microns, so as not to affect the flatness of the wafer surface.

In order to make the polishing pad have a lower surface roughness, the diamond particle size of the diamond abrasive layer of the dresser should be further reduced, and the density of diamond particles should be increased. However, reducing the size of the diamond particles and increasing the density of the diamond particles help to reduce the surface roughness of the polishing pad, but it also causes a significant reduction in the material removal rate during the dressing of the polishing pad, thereby lengthening the dressing polishing Pad time. Therefore, with the existing dresser, it is impossible to shorten the time for dressing the polishing pad while obtaining a lower surface roughness of the polishing pad.

Conversely, if you want to increase the material removal rate of the polishing pad and use a dresser with larger diamond particles, the polishing pad cannot have a lower surface roughness.

The technical problem to be solved by the present invention is to solve the problem that the existing polishing pad dressing device cannot take into account that the polishing pad has low surface roughness and high removal rate and shortens the time for dressing the polishing pad.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a polishing pad trimming device, a manufacturing method of the polishing pad trimming device, and a polishing pad trimming method. The polishing pad dressing device is used for dressing a polishing pad, and includes a base, a first grinding component, and a second grinding component. The base has a joint surface and a bottom surface opposite to the joint surface. The first grinding component is disposed on the joint surface and has a first grinding structure, and the first grinding structure has a plurality of first grinding blades. The second grinding component is disposed on the bonding surface and has a second grinding structure, and the second grinding structure has a plurality of second grinding blades. The material removal rate of the second abrasive structure to the polishing pad is greater than the material removal rate of the first abrasive structure to the polishing pad, and the height of the tip of the second abrasive blade portion relative to the bottom surface is lower than that of the tip of the first abrasive blade portion The height of the bottom.

In one embodiment of the present invention, the first abrasive component includes a first body portion and a first diamond layer covering the first body portion. The first body portion includes a first base portion and a plurality of first protrusion portions protruding from the surface of the first base portion, and the plurality of first protrusion portions cooperate with the first diamond layer to form a plurality of first grinds Blade. In addition, the second grinding component includes a second body portion and a second diamond layer covering the second body portion. The second body portion includes a second base portion and a plurality of second protrusion portions protruding from the surface of the second base portion, and the plurality of second protrusion portions cooperate with the second diamond layer to form a plurality of second grinds Blade.

Another technical solution adopted by the present invention is to provide a polishing pad trimming method. First, a polishing pad dressing device as described above is provided. In a first dressing stage, a first polishing pressure is applied to a polishing pad by the polishing pad dressing device, so that a polishing surface of the polishing pad is contacted by the first polishing structure and the second polishing structure; and In the second dressing stage, a second polishing pressure less than the first polishing pressure is applied to the polishing pad by the polishing pad dressing device, so that the polishing surface is only contacted by the first polishing structure but not by the second polishing structure.

Another technical solution adopted by the present invention is to provide a manufacturing method of a polishing pad dressing device. First, a base is provided. The base has a bonding surface and a bottom surface opposite to the bonding surface. Subsequently, a first grinding component is formed, wherein the step of forming the first grinding component includes at least: forming a first body portion, and the first body portion includes a first base portion and a plurality of surfaces protruding from the first base portion A first protruding portion; and forming a first diamond layer covering the surface of the first body portion to cooperate with the plurality of first protruding portions to form a plurality of first cutting edge portions. Subsequently, a second grinding component is formed, and the step of forming the second grinding component at least includes: forming a second body portion, and the first two body portions include a second base portion and a plurality of surfaces protruding from the second base portion Second protruding portion; and forming a second diamond layer covering the surface of the second body portion to cooperate with the plurality of second protruding portions to form a plurality of second cutting edge portions, wherein the second cutting edge The sharpness of the portion is greater than the first cutting edge portion, or the distribution density of the second cutting edge portion is less than the first cutting edge portion. After that, the first polishing component and the second polishing component are disposed on the joining surface, wherein the height of the tip of the second polishing blade portion relative to the bottom surface is lower than the height of the tip of the first polishing blade portion relative to the bottom surface.

The beneficial effect of the present invention is that in the polishing pad dressing device, the manufacturing method of the polishing pad dressing device, and the polishing pad dressing method provided by the technical solutions of the present invention, the first polishing component and the second polishing component of the polishing pad dressing device respectively have The first abrasive structure and the second abrasive structure, the material removal rate of the second abrasive structure to the polishing pad is greater than the material removal rate of the first abrasive structure to the polishing pad, and the height position of the tip of any second abrasive blade It is lower than the height position where the tip of any first grinding blade portion is located.

According to this, when the polishing pad dressing device of the embodiment of the present invention is used to dress the polishing surface of the polishing pad, the polishing pad will be in contact with the second polishing structure and the first polishing structure simultaneously in the first dressing stage to increase the material removal rate . Polishing pad in the second dressing stage Only contact with the first abrasive structure to reduce the surface roughness of the polished surface. In this way, the polishing pad trimming device and the trimming method using the embodiments of the present invention can solve the problem of not only shortening the time for trimming the polishing pad, but also allowing the polishing surface of the polishing pad to have a lower surface roughness.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and description only, and are not intended to limit the present invention.

P1‧‧‧Polishing pad dressing device

10‧‧‧Base

101‧‧‧Joint surface

101a‧‧‧The first preset area

101b‧‧‧The second preset area

102‧‧‧Bottom

11‧‧‧First grinding component

11A, 11B‧‧‧First grinding unit

11S‧‧‧First grinding structure

111t‧‧‧tip

110‧‧‧The first joint layer

L1‧‧‧First reference surface

111‧‧‧First grinding blade

110’‧‧‧The first body

110a‧‧‧The first base

110b‧‧‧First protrusion

112‧‧‧The first diamond layer

113‧‧‧ First chassis

12‧‧‧Second grinding component

12A, 12B‧‧‧Second grinding unit

12S‧‧‧Second grinding structure

121‧‧‧Second grinding blade

121t‧‧‧tip

L2‧‧‧Second reference surface

120‧‧‧The second joint layer

120’‧‧‧Second Body

120a‧‧‧Second base

120b‧‧‧Second protrusion

122‧‧‧Second diamond layer

123‧‧‧The second chassis

H‧‧‧Vertical height difference

H1, H2‧‧‧ Height

D1, D2‧‧‧spacing

G1‧‧‧polishing pad

G11‧‧‧Polished surface

20‧‧‧ stage

21‧‧‧Rotating axis

22‧‧‧spindle

23‧‧‧Mobile arm

24‧‧‧ Lifting unit

25‧‧‧Control unit

26‧‧‧cleaning unit

FIG. 1 is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to an embodiment of the invention.

2 is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to another embodiment of the invention.

3 is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to another embodiment of the invention.

4 is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to another embodiment of the invention.

5 is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to another embodiment of the present invention.

6 is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to an embodiment of the invention.

7 is a schematic top view of a polishing pad dressing device according to an embodiment of the invention.

8 is a schematic top view of a polishing pad dressing device according to another embodiment of the invention.

9 is a schematic top view of a polishing pad dressing device according to another embodiment of the invention.

10 is a schematic top view of a polishing pad trimming device according to yet another embodiment of the present invention.

FIG. 11 is a schematic side view of a polishing pad dressing device of an embodiment of the present invention for dressing a polishing pad.

FIG. 12 is a partially enlarged schematic diagram of using the polishing pad dressing device of the embodiment of the present invention to dress the polishing pad in the first dressing stage.

13 is a partially enlarged schematic diagram of using the polishing pad dressing device of the embodiment of the present invention to dress the polishing pad in the second dressing stage.

14A to 14C are partially enlarged schematic cross-sectional views of the polishing pad trimming device in each step of the manufacturing method according to an embodiment of the present invention.

15A to 15B are partially enlarged schematic cross-sectional views of the polishing pad trimming device in each step of the manufacturing method according to another embodiment of the present invention.

16A to 16B are partially enlarged schematic cross-sectional views of the polishing pad trimming device in each step of the manufacturing method according to another embodiment of the present invention.

The following is a specific specific example to describe the embodiments of the present invention related to "polishing pad dressing device and manufacturing method and polishing pad dressing method". The polishing pad dressing device provided by the embodiment of the present invention can be used to dress a polishing pad for polishing wafers.

Firstly, in the process of using the polishing pad dressing device to dress the polishing pad, it can be roughly divided into a first dressing stage and a second dressing stage. In the first trimming stage, the waste material after the polishing pad polishes the wafer is mainly removed by the polishing pad trimming device. In the second trimming stage, the polishing surface of the polishing pad is trimmed mainly by the polishing pad trimming device, so that the polishing surface has a low roughness, so that the polishing pad is suitable for polishing wafers with a thin line width (about less than 45 nm) .

Please refer to Figure 1. FIG. 1 is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to an embodiment of the invention. The polishing pad dressing device P1 of the embodiment of the present invention includes a base 10, a first grinding assembly 11 and a second grinding assembly 12. The base 10 has a bonding surface 101 and a bottom surface 102 opposite to the bonding surface 101. The material constituting the base 10 may be stainless steel, die steel, metal alloy, ceramic, polymer or composite material. In this embodiment, the appearance of the base 10 is in the shape of a disc, but the present invention does not limit the shape of the base 10.

In this embodiment, the combining surface 101 defines a first preset area 101a and a second preset area 101b. The bonding surface 101 is opposite to the bottom surface 102 in the first preset area 101a The height of may be greater than or equal to the height of the bonding surface 101 relative to the bottom surface 102 in the second preset area 101b. In this embodiment, the height of the bonding surface 101 in the first preset area 101a relative to the bottom surface 102 is greater than the height of the bonding surface 101 in the second preset area 101b relative to the bottom surface 102, so that the bonding surface 101 has a stepped structure .

The first grinding component 11 and the second grinding component 12 are disposed on the joint surface 101 of the base 10 for trimming a polishing surface of the polishing pad. Specifically, in this embodiment, the first grinding component 11 is disposed in the first preset area 101a, and the second grinding component 12 is disposed in the second preset area 101b. In addition, the first grinding assembly 11 has a first grinding structure 11S. Similarly, the second grinding component 12 also has a second grinding structure 12S.

The material removal rate of the polishing pad by the first grinding structure 11S is different from the material removal rate of the polishing pad by the second grinding structure 12S. In other words, the surface roughness of the polishing pad trimmed by the first grinding structure 11S is different from the surface roughness of the polishing pad trimmed by the second grinding structure 12S.

In this embodiment, the material removal rate of the second polishing structure 12S to the polishing pad will be greater than the material removal rate of the first polishing structure 11S to the polishing pad. However, the polishing accuracy of the surface of the polishing pad by the first polishing structure 11S is greater than the polishing accuracy of the surface of the polishing pad by the second polishing structure 12S. Accordingly, in this embodiment, the surface roughness of the polishing pad trimmed by the first grinding structure 11S will be smaller than the surface roughness of the polishing pad trimmed by the second grinding structure 12S.

That is to say, in the polishing pad dressing device P1 of the embodiment of the present invention, at least two or more abrasive components with different material removal rates for the polishing pad are provided in different regions of the bonding surface 101 (but this embodiment Taking the first grinding assembly 11 and the second grinding assembly 12 as examples), the polishing pad is trimmed in different trimming stages.

When the polishing pad is trimmed by the polishing pad trimming device P1 of the embodiment of the present invention, the second abrasive structure 12S has a relatively high material removal rate for the polishing pad, and can mainly remove the scrap of the polishing surface of the polishing pad in the first trimming stage And increase the speed of material removal. The first grinding structure 11S has a lower material removal rate for the polishing pad, but can make the polishing pad have a lower surface roughness, and makes the polishing pad suitable for polishing with a thin line width Wafer. Therefore, the first polishing structure 11S mainly dresses the polishing surface of the polishing pad in the second dressing stage.

Please refer to FIG. 1. In the embodiment of the present invention, the first polishing structure 11S has a plurality of first polishing blade portions 111, and the second polishing structure 12S has a plurality of second polishing blade portions 121.

In addition, the height position of the tip 121t of the second polishing blade 121 is different from the height position of the tip 111t of the first polishing blade 111. Specifically, the height H2 of the tip 121t of the second polishing blade 121 relative to the bottom surface 102 is smaller than the height H1 of the tip 111t of the first polishing blade 111 relative to the bottom surface 102.

Furthermore, the surface formed by the tips 111t of the three highest first polishing blades 111 is defined as a first reference plane L1, and the tips 111t of the other first polishing blades 111 are relative to the first reference plane L1 The vertical height difference does not exceed 20 microns ( μm ). That is, the plurality of tips 111t of the first polishing blade 111 have substantially the same height position.

In addition, the surface formed by the tips 121t of the three highest second polishing blades 121 is defined as a second reference surface L2. Similarly, the vertical height difference H of the tip 121t of the other second grinding blade 121 with respect to the second reference plane L2 does not exceed 20 micrometers (μm). In this embodiment, the vertical height difference H between the first reference plane L1 and the second reference plane L2 is between 20 micrometers (μm) and 50 micrometers (μm).

In the embodiment of FIG. 1, the first polishing component 11 includes a first bonding layer 110, and a plurality of first polishing blades 111 are dispersed in the first bonding layer 110. In addition, the second polishing assembly 12 includes a second bonding layer 120, and a plurality of second polishing blades 121 are dispersedly arranged in the second bonding layer 120. The first grinding blade 111 and the second grinding blade 121 may be single crystal diamond, polycrystalline diamond, chemical vapor deposition (CVD) diamond or physical vapor deposition (PVD) diamond or boron nitride (BN).

It is first explained that the first grinding structure 11S and the second grinding structure 12S can be polished by adjusting the parameters of the shape, density and size of the plurality of first grinding blades 111 and the plurality of second grinding blades 121 The pad has different material removal And the vertical height difference between the first reference plane L1 and the second reference plane L2. A variety of different embodiments will be described below.

For example, in this embodiment, the sharpness of the first grinding blade 111 and the sharpness of the second grinding blade 121 are substantially the same. However, the density of the first polishing blade 111 is greater than the density of the second polishing blade 121. In addition, the average particle diameter of the plurality of first polishing blade portions 111 is smaller than the average particle diameter of the plurality of second polishing blade portions 121. In this way, the density of the first polishing blade 111 is made higher, so that the polishing pad can have a lower surface roughness.

Therefore, the distance D2 between the bottoms of every two adjacent second grinding blade portions 121 is greater than the distance D1 between the bottoms of every two adjacent first grinding blade portions 111. However, compared to the first polishing structure 11S, the second polishing structure 12S will have a larger surface roughness, thereby having a higher material removal rate for the polishing pad. On the other hand, in the embodiment of the present invention, the surface processing accuracy of the polishing pad 11S on the polishing pad is made higher.

Please refer to FIG. 2, which shows a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to yet another embodiment of the present invention. In this embodiment, the average particle diameter of the plurality of first polishing blades 111 and the average particle diameter of the plurality of second polishing blades 121 are substantially the same, and the sharpness of the first polishing blade 111 is also the same as that of the second polishing blade The sharpness of 121 is about the same. However, the density of the plurality of second polishing blades 121 in this embodiment is smaller than the density of the plurality of first polishing blades 111. Therefore, the second polishing structure 12S has a higher material removal rate to the polishing pad, but the surface polishing accuracy of the first polishing structure 11S to the polishing pad is higher, and the surface roughness of the polishing pad is lower.

Please continue to refer to FIG. 3, which is a partially enlarged schematic cross-sectional view of a polishing pad trimming device according to another embodiment of the present invention. In this embodiment, the average particle diameter of the first polishing blade 111 and the average particle diameter of the second polishing blade 121 are approximately the same, and the density of the first polishing blade 111 is also approximately the density of the second polishing blade 121 the same. However, the sharpness of the first polishing blade 111 is less than the sharpness of the second polishing blade 121. In an embodiment, the first grinding blade 111 may select a diamond with a more complete crystalline form, and The second grinding blade 121 may select a diamond whose crystal form is broken. Under this condition, the material removal rate of the second polishing structure 12S to the polishing pad can be made greater than the material removal rate of the first polishing structure 11S to the polishing pad, and the surface processing accuracy of the first polishing structure 11S to the polishing pad can be made High, the surface roughness of the polishing pad is low.

On the other hand, in this embodiment, the bonding surface 101 of the base 10 is a flat surface, and defines a first preset area 101a and a second preset area 101b. The first grinding component 11 and the second grinding component 12 are respectively assembled in the first predetermined area 101a and the second predetermined area 101b.

Specifically, the first polishing assembly 11 further includes a first chassis 113, and the first polishing structure 11S (including the first bonding layer 110 and the plurality of first polishing blades 111) is formed on the first chassis 113. In addition, the second polishing assembly 12 includes a second chassis 123, and the second polishing structure 12S (including the second bonding layer 120 and the plurality of second polishing blades 121) is formed on the second chassis 123. In this embodiment, the thickness of the first chassis 113 is greater than the thickness of the second chassis 123, so that the height of the tip 111t of the first grinding blade 111 relative to the bottom surface 102 is greater than that of the tip 121t of the second grinding blade 121 The height of the bottom surface 102.

Please refer to FIG. 4, which is a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to another embodiment of the present invention. In the embodiment of FIG. 4, the coupling surface 101 of the base 10 is a flat surface. Both the first grinding component 11 and the second grinding component 12 are disposed on the bonding surface 101.

In this embodiment, the thickness of the first bonding layer 110 of the first grinding assembly 11 is the same as the thickness of the second bonding layer 120. However, the average particle diameter of the first polishing blade 111 is greater than the average particle diameter of the second polishing blade 121, so that the height of the tip 111t of the first polishing blade 111 relative to the bottom surface 102 is greater than the tip of the second polishing blade 121 The height of 121t with respect to the bottom surface 102.

In addition, by adjusting the depth of the plurality of first polishing blades 111 embedded in the first bonding layer 110 and adjusting the depth of the plurality of second polishing blades 121 embedded in the second bonding layer 120, it is also possible to make The height of the first cutting tip 111t relative to the bottom surface 102 The degree is higher than the height of the second cutting tip 121t relative to the bottom surface 102.

In this embodiment, the distribution density of the first polishing blade 111 is equal to the distribution density of the plurality of second polishing blades. However, the sharpness of the first polishing blade 111 may be smaller than the sharpness of the second polishing blade 121. In one embodiment, diamond particles with a more complete crystalline form may be selected as the first grinding blade 111, and diamond particles with a more crystalline form may be selected as the second grinding blade 121.

Compared with the first polishing blade 111, even if the particle size of the second polishing blade 121 is small, the second polishing structure 12S has a low surface roughness, but due to the sharpness of the second polishing blade 121 Higher, so the second abrasive structure 12S will have a higher material removal rate for the polishing pad. Conversely, the sharpness of the first grinding blade 111 is small (blunt), so the material removal rate of the polishing pad is low, but the polishing pad can have a low surface roughness.

Please refer to FIG. 5, which shows a partially enlarged schematic cross-sectional view of a polishing pad dressing device according to another embodiment of the present invention. In this embodiment, the bonding surface 101 is also a flat surface, and the average particle diameter of the first polishing blade 111 is also larger than the average particle diameter of the second polishing blade 121. The difference between this embodiment and the embodiment of FIG. 4 is that the sharpness of the first grinding blade 111 and the sharpness of the second grinding blade 121 are the same, and the distribution density of the second grinding blade 121 is smaller than that of the first grinding blade Distribution density of 111. According to this, the distance D2 between the bottoms of the two adjacent second polishing blades 121 is greater than the distance D1 between the bottoms of the two adjacent first polishing blades 111.

It should be noted that, compared to the first polishing blade 111, even if the particle diameter of the second polishing blade 121 is smaller, the second polishing structure 12S has a lower surface roughness, but due to the second polishing blade The density of the portion 121 is low, and the spacing D2 is large, so the second polishing structure 12S has a higher material removal rate for the polishing pad, and the first polishing structure 11S has a greater surface polishing precision for the polishing pad (that is, the The polishing pad has a lower surface roughness).

It should be noted that the above embodiment is only an example to illustrate how to provide a polishing component with different material removal rates for the polishing pad on the bonding surface 101 of the base 10, not for use. To limit the scope of the present invention. In fact, the material removal rate of the second polishing structure 12S to the polishing pad is greater than the material removal rate of the first polishing structure 11S to the polishing pad, and the height position of the tip 121t of the second polishing blade 121 is lower than the first On the premise of the height position of the tip 111t of a polishing blade 111, the particle size (or size) of the polishing blade used by the first polishing assembly 11 and the second polishing assembly 12 can be arbitrarily selected or adjusted. Parameters such as the depth of the bonding layer, the crystal form of the polishing blade, the distribution density, the pitch of the polishing blade, and the thickness of the bonding layer. In principle, the higher the distribution density of the polishing blades of the polishing structure, the lower the sharpness of the polishing blades or the smaller the particle size of the polishing blades, the higher the polishing accuracy of the polishing structure on the polishing pad, and It is to make the polishing pad have a lower surface roughness.

Next, please refer to FIG. 6, which shows a partially enlarged schematic cross-sectional view of a polishing pad trimming device according to another embodiment of the present invention. In the embodiment of FIG. 6, the first grinding assembly 11 includes a first body portion 110' and a first diamond layer 112 covering the first body portion 110'.

Specifically, the material of the first body portion 110' may be ceramic or metal, where the ceramic is, for example, silicon carbide. In addition, the first body portion 110' has a first base portion 110a and a plurality of first protrusions 110b protruding from the surface as a part of the first grinding blade portion 111. The first diamond layer 112 covers the first body portion 110' to increase the wear resistance and corrosion resistance of the first abrasive component 11. Therefore, the first diamond layer 112 can be used as the first polishing structure 11S. In addition, the plurality of first protrusions 110b cooperate with the first diamond layer 112 to form a plurality of first grinding blades 111.

Similarly, the second grinding assembly 12 includes a second body portion 120' and a second diamond layer 122 covering the second body portion 120'. The second body portion 120' also includes a second base portion 120a and a plurality of second protrusions 120b protruding from the surface of the second base portion 120a. The second diamond layer 122 serves as the second polishing structure 12S, and the plurality of second protrusions 120b cooperate with the second diamond layer 122 to form a plurality of second polishing blade portions 121. The aforementioned first diamond layer 112 and second diamond layer may be formed by chemical vapor deposition or physical vapor deposition.

In this embodiment, by adjusting the sharpness, distribution density, and size of the first protruding portion 110b and the second protruding portion 120b, the second abrasive component 12 can also have a higher material removal rate for the polishing pad , And the first grinding assembly 11 has a higher surface processing accuracy for the polishing pad. In this embodiment, the distribution density of the second protrusions 120b is made smaller to improve the material removal rate of the polishing pad by the second grinding assembly 12.

In addition, in this embodiment, the total thickness of the first body portion 110' is greater than the total thickness of the second body portion 120', so that the height of the tip 111t of the first cutting edge portion 111 relative to the bottom surface is greater than the second cutting edge portion The height of the tip 121t of 121 relative to the bottom surface.

Since the polishing pad dressing device P1 of the embodiment of the present invention has two kinds of abrasive surfaces with different surface roughnesses, in order to avoid uneven removal of materials in different areas of the polishing pad during dressing of the polishing pad, resulting in uneven polishing pads It is flat or has different surface roughness in different areas. The top-view pattern of the first polishing element 11 and the top-view pattern of the second polishing element 12 may be point-symmetric patterns or line-symmetric patterns. In the following, different embodiments will be listed for description.

Please refer to FIG. 7 first. FIG. 7 is a schematic top view of a polishing pad dressing device according to an embodiment of the invention. From the top view of FIG. 7, the top view pattern of the first polishing assembly 11 and the top view pattern of the second polishing assembly 12 cooperate with each other to form a concentric circle pattern. Specifically, the top view pattern of the second polishing component 12 is circular, and is located in the central area of the base 10. The top-view pattern of the first grinding component 11 is ring-shaped and surrounds the second grinding component 12. In another embodiment, the positions and shapes of the first grinding component 11 and the second grinding component 12 can be adjusted with each other.

When the ratio of the distribution area between the first grinding structure 11S and the second grinding structure 12S is less than 1, that is, the distribution area of the second grinding structure 12S is larger than the distribution area of the first grinding structure 11S, it means that the polishing is processed in the first trimming stage When padding, the waste material on the surface of the polishing pad can be removed more quickly. In contrast, when the polishing pad is processed in the subsequent second dressing stage, it takes a longer time to flatten the polishing surface of the polishing pad.

Conversely, when the first grinding structure 11S and the second grinding structure 12S When the area ratio is greater than 1, that is, the area of the first polishing structure 11S is greater than the distribution area of the second polishing structure, the material removal rate is lower when the polishing pad is processed in the first dressing stage, but it is processed in the subsequent second dressing stage When polishing the pad, you can spend less time to flatten the polishing surface of the polishing pad. Therefore, the distribution area ratio between the first polishing structure 11S and the second polishing structure 12S can be adjusted according to actual application requirements. In an embodiment, the distribution area ratio between the first polishing structure 11S and the second polishing structure 12S may be between 0.5 and 1.5.

Please refer to FIG. 8, which is a schematic top view of a polishing pad trimming device according to another embodiment of the present invention. In the top view of FIG. 8, the second polishing component 12 is located in the central area of the bonding surface 101. Unlike the embodiment of FIG. 7, the first grinding assembly 11 of the present embodiment includes a plurality of first grinding units 11A dispersedly arranged with each other, and the plurality of first grinding units 11A are disposed around the second grinding assembly 12. In this embodiment, the top view pattern of the second polishing assembly 12 and the top view pattern of each first polishing unit 11A are also circular.

That is, in this embodiment, the surfaces of the plurality of first polishing units 11A cooperate to form the first polishing structure 11S. Therefore, the first polishing structure 11S in this embodiment is not a continuous surface.

Please refer to FIG. 9, which is a schematic top view of a polishing pad trimming device according to another embodiment of the present invention. In the embodiment of FIG. 9, the first grinding assembly 11 includes a plurality of first grinding units 11A dispersedly arranged with each other, and the second grinding assembly 12 also includes a plurality of second grinding units 12A dispersedly arranged with each other. In other words, neither the first polishing structure 11S nor the second polishing structure 12S in this embodiment is a continuous surface.

In addition, in this embodiment, a plurality of first grinding units 11A and a plurality of second grinding units 12A are arranged around the center of the base 10 and are alternately arranged. In this embodiment, the number of the first polishing unit 11A and the number of the second polishing unit 12A are the same, so that the ratio of the distribution area of the first polishing structure 11S and the second polishing structure 12S is between 0.5 and 1.5. The plan view pattern in which the plurality of first polishing units 11A and the plurality of second polishing units 12A are arranged is point-symmetric.

In this embodiment, the top view pattern of each first polishing unit 11A and the top view pattern of each second polishing unit 12A are circular, but the present invention is not limited.

Please refer to FIG. 10, which is a schematic top view of a polishing pad trimming device according to yet another embodiment of the present invention. In this embodiment, the top-view pattern of each first polishing unit 11B and the top-view pattern of each second polishing unit 12B are stripe patterns, and the first and second polishing units 11B and 12B are arranged radially.

In other words, each first polishing unit 11B and each second polishing unit 12B extend from the center of the bonding surface 101 toward the edge of the bonding surface 101, so that the top-view patterns of the first polishing structure 11S and the second polishing structure 12S Form a radial pattern.

In another embodiment, the top-view pattern of the first polishing component 11 or the top-view pattern of the second polishing component 12 does not have point symmetry or line symmetry, but a spiral pattern.

In addition, the present invention provides a method for dressing polishing pads using the aforementioned polishing pad dressing device. Please refer to Figure 11 first. FIG. 11 shows a schematic side view of a polishing pad dressing device using an embodiment of the present invention for dressing a polishing pad.

As shown in FIG. 11, the polishing pad G1 is disposed on a stage 20, and the stage 20 is connected to a rotating shaft 21 to drive the polishing pad G1 to rotate. The polishing pad G1 has a polishing surface G11 for polishing or grinding a wafer (not shown) held on a wafer holder (not shown). When the polishing pad G1 is grinding or polishing the wafer, the slurry distribution unit (not shown) distributes the polishing slurry onto the polishing surface G11 of the polishing pad G1.

The polishing pad dressing device P1 can be used to maintain the polishing surface G11 of the polishing pad G1 with a predetermined roughness, and to remove waste materials and residues on the polishing surface G11. In one embodiment, the polishing surface G11 is trimmed by the polishing pad trimming device P1 when or after the wafer surface is polished. The polishing pad dressing device P1 may be one of the polishing pad dressing devices P1 described above in FIGS. 1 to 7.

In this embodiment, the polishing pad dressing device P1 is disposed on a moving arm 23 through a rotating shaft 22, wherein both the rotating shaft 22 and the moving arm 23 are electrically connected to a control unit $25. When the polishing pad dressing device P1 dresses the polishing surface G11, the control unit 25 synchronously drives the polishing pad dressing device P1 through the moving arm 23 to move radially on the polishing surface G11 to drive the polishing pad dressing device P1 to rotate through the rotation shaft 22 to dress Polished surface G11.

In addition, the moving arm 23 is connected to a lifting unit 24, and the lifting unit 24 is also electrically connected to the control unit 25. The control unit 25 may control the polishing pad dressing device P1 to move up and down through the lifting unit 24 to adjust the polishing pressure applied to the polishing pad G1 by the polishing pad dressing device P1, thereby controlling the polishing pad dressing device P1 to contact the polishing surface of the polishing pad G1.

In addition, during the process of dressing the polishing pad G1 by the polishing pad dressing device P1, a cleaning unit 26 can spray cleaning liquid (eg, water) onto the polishing surface G11 to the polishing surface G11 to remove debris generated during the dressing process Or residue.

As mentioned above, in the process of dressing the polishing pad G1 by the polishing pad dressing device P1, it is roughly divided into a first dressing stage and a second dressing stage. Please refer to Figure 12. FIG. 12 is a partially enlarged schematic diagram of using the polishing pad dressing device of the embodiment of the present invention to dress the polishing pad in the first dressing stage.

In the first dressing stage, a first polishing pressure is applied to the polishing pad by the polishing pad dressing device P1, so that the polishing surface G11 of the polishing pad G1 is contacted by the first polishing structure 11S and the second polishing structure 12S. Specifically, the control unit 25 drives the polishing pad dressing device P1 to a lower first position through the lifting unit 24, so that the polishing surface G11 can simultaneously contact the second abrasive structure 12S with a higher surface roughness and a lower surface roughness Low first grinding structure 11S.

That is, in the first dressing stage, the polishing pad dressing device P1 dresses the polishing pad G1 through the first polishing unit 11 and the second polishing unit 12 together. Since the surface roughness of the second grinding structure 12S of the second grinding assembly 12 is relatively high, the first grinding assembly 11 can be assisted to increase the speed of material removal.

In addition, it should be noted that although the second grinding structure 12S only occupies a partial area of the bonding surface 101 in the embodiment of the present invention, the control unit 25 can move the arm 23 to And the self-rotating shaft 22 controls the movement range and rotation speed of the polishing pad dressing device P1. Therefore, in the first trimming stage, the second grinding structure 12S will sequentially contact and trim all areas of the polishing surface G11 to remove the waste material remaining on the polishing surface G11.

Next, please refer to FIG. 13. 13 is a partially enlarged schematic diagram of using the polishing pad dressing device of the embodiment of the present invention to dress the polishing pad in the second dressing stage.

In the second dressing stage, a second polishing pressure smaller than the first polishing pressure is applied to the polishing pad G1 by the polishing pad dressing device P1, so that the polishing surface G11 of the polishing pad G1 is only contacted by the first abrasive structure 11S and not by the first The second grinding structure 12S is in contact.

Similarly, the control unit 25 drives the polishing pad dressing device P1 to a higher second position through the lifting unit 24, so that the polishing surface G11 of the polishing pad G1 only contacts the first polishing structure 11S with a lower surface roughness.

In the second trimming stage, only the first grinding structure 11S with a smaller surface roughness is used to trim the polishing surface G11 to further reduce the surface roughness of the polishing surface G11, thereby making the polishing pad suitable for polishing wafers with a thin line width . Therefore, in the second dressing stage, it is more suitable for the polishing surface G11 to continue to contact the second grinding structure 12S.

Similarly, the control unit 25 can control the moving range and the rotation speed of the polishing pad dressing device P1 through the moving arm 23 and the rotation shaft 22. Therefore, in the first trimming stage, the first grinding structure 11S will sequentially contact and trim all regions of the polishing surface G11, so that the entire polishing surface G11 has a low surface roughness in different regions.

In addition, it should be noted that in the first dressing stage and in the second dressing stage, the polishing pad G1 rotates by rotating the shaft 21. In addition, as described above, the control unit 25 controls the polishing pad dressing device P1 to move back and forth along the radial direction of the polishing pad G1 through the moving arm 23, and controls the polishing pad dressing device P1 to rotate by the rotation axis 22. In addition, the cleaning unit 26 continuously sprays a cleaning liquid on the polishing surface G11 to assist in removing waste materials remaining on the polishing surface G11.

Next, please refer to FIGS. 14A to 14C, which respectively show partially enlarged schematic cross-sectional views of the polishing pad trimming device of an embodiment of the present invention in each step of the manufacturing method.

As shown in FIG. 14A, a base 10 is first provided, and the base 10 has a coupling surface 101 and a bottom surface 102 opposite to the coupling surface 101. In this embodiment, the bonding surface 101 has a stepped structure. In other words, the bonding surface 101 defines a first preset area 101a and a second preset area 101b. The height of the bonding surface 101 in the first preset area 101a relative to the bottom surface 102 is greater than that of the bonding surface 101 in the second preset area The height of 101b relative to the bottom surface 102.

Next, as shown in FIGS. 14B and 14C, the first polishing structure 11S of the first polishing component 11 is formed in the first predetermined area 101a and the second polishing structure 12S of the second polishing component 12 is formed in the second predetermined area 101b .

Specifically, in this embodiment, as shown in FIG. 14B, the first bonding layer 110 and the second bonding layer 120 are formed in the first preset region 101 a and the second preset region 101 b, respectively. Next, a plurality of first polishing blades 111 are dispersed in the first bonding layer 110, and a plurality of second polishing blades 121 are scattered in the second bonding layer 120.

Subsequently, as shown in FIG. 14C, by high-temperature brazing (Resin bonding) or resin bonding (Resin bonding) or metal, ceramic sintering (Sintering) or electroplating (Electorplate) treatment, so that the plurality of first grinding blades 111 pass through the first The bonding layer 110 is fixed in the first preset area 101a, and the plurality of second grinding blade portions 121 are fixed in the second preset area 101b through the second bonding layer 120.

In an embodiment, in the step of dispersing the plurality of first grinding blades 111 and the plurality of second grinding blades 121, the first grinding blade 111 may have a higher distribution density and the second The grinding blade 121 has a lower distribution density, and the second grinding assembly 12 has a higher material removal rate to the polishing pad.

In addition, it is also possible to select diamond particles with a smaller particle size or a more complete crystal form as the first grinding edge 111, and diamond particles with a larger particle size or a less complete crystal type as the second grinding edge 121 , To achieve the same purpose. In this embodiment, the planar patterns of the first polishing blade 111 and the second polishing blade 121 may be a spiral pattern.

In another embodiment, the first preset area 101a and the second After the area 101b is processed to form the body of the first polishing blade portion 111 or the second polishing blade portion 121, a diamond film is plated by chemical vapor deposition to form a first polishing structure 11S and a second polishing structure 12S .

Please refer to FIGS. 15A to 15B, which respectively show partially enlarged schematic cross-sectional views of the polishing pad dressing device according to an embodiment of the present invention in each step of the manufacturing method. In this embodiment, the first grinding component 11 and the second grinding component 12 are formed first, and then the first grinding component 11 and the second grinding component 12 are assembled on the base 10.

Specifically, as shown in FIG. 15A, in this embodiment, the bonding surface 101 of the base 10 is a flat surface, and the first preset area 101a and the second preset area 101b are defined in advance. In this embodiment, the first polishing assembly 11 includes a first chassis 113, a first bonding layer 110 formed on the first chassis 113, and a plurality of first polishing blades 111 dispersed in the first bonding layer 110. In addition, the second polishing assembly 12 includes a second chassis 123, a second bonding layer 120 formed on the second chassis 123, and a plurality of second polishing blades 121 dispersedly disposed in the second bonding layer 120.

As shown in FIG. 15A, the thickness of the first chassis 113 is greater than the thickness of the second chassis 123. In an embodiment, the method of forming the first grinding component 11 (or the second grinding component 12) may be forming the first bonding layer 110 (or the second bonding layer 120) by high temperature brazing and dispersing the first bonding layer A plurality of first grinding blade portions 111 (or second grinding blade portions 121) in the layer 110 (or the second bonding layer 120).

In other embodiments, the method of forming the first grinding assembly 11 (or the second grinding assembly 12) may also be to first process the surface of the first chassis 113 (or the second chassis 123) to form the first grinding blade After 111 (or the second polishing blade 121), a diamond film is deposited by chemical vapor deposition.

Subsequently, as shown in FIG. 15B, the first grinding component 11 and the second grinding component 12 are respectively assembled in the first preset area 101 a and the second preset area 101 b of the bonding surface 101. In an embodiment, the first grinding component 11 and the second grinding component 12 can be assembled on the bonding surface 101 by locking elements or glue or resin, respectively, to form the polishing pad trimming device of the embodiment of the present invention.

In addition, the thickness of the first chassis 113 will be greater than the thickness of the second chassis 123, so that after the first grinding assembly 11 and the second grinding assembly 12 are assembled on the joint surface 101, respectively, the tips 111t of the plurality of first grinding blades 111 The height relative to the bottom surface 102 will also be greater than the height of the tips 121t of the plurality of second polishing blades 121 relative to the bottom surface 102.

Please refer to FIG. 16A to FIG. 16B, which respectively show a partially enlarged schematic cross-sectional view of the polishing pad dressing device according to an embodiment of the present invention in each step of the manufacturing method.

As shown in FIG. 16A, the base 10 of this embodiment is the same as the embodiment of FIG. 15A. In addition, the manufacturing method of the polishing pad dressing device of this embodiment is also to form the first grinding component 11 and the second grinding component 12 first, and then assemble the first grinding component 11 and the second grinding component 12 in the first preset area respectively 101a and the second preset area 101b.

The manufacturing method in this embodiment can be used to manufacture the polishing pad dressing device shown in FIG. 6. The steps of forming the first grinding assembly 11 are similar to the steps of forming the second grinding assembly 12, and the following will take the formation of the first grinding assembly 11 as an example for detailed description.

Specifically, in the step of forming the first polishing assembly 11, the first body portion 110' is formed first. The first body portion 110' has a first base portion 110a and a plurality of first protrusions 110b protruding from the surface of the first base portion 110a. The plurality of first protrusions 110b each serve as a main body of the plurality of first polishing blades 111.

The material used to form the first body portion 110' may be ceramic or metal, where the ceramic is, for example, silicon carbide. When the material of the first body portion 110' is ceramic, the first body portion 110' may be formed through powder metallurgy and sintering processes. When the material of the first body portion 110' is metal, the first body portion 110' may be formed by powder metallurgy or metal processing.

After that, a first diamond layer 112 covering the first body portion 110' is formed to increase the wear resistance and corrosion resistance of the first abrasive component 11. The first diamond layer 112 can be used as the first grinding structure 11S, and cooperate with the plurality of first protrusions 110b to form a plurality of first cutting edge portions 111. In one embodiment, when the material of the first body portion 110' is ceramic, it can be obtained by microwave plasma chemical vapor deposition (MPCVD) The first diamond layer 112 is formed. In another embodiment, when the material of the first body portion 110' is metal, the first diamond layer 112 may be formed by hot filament chemical vapor deposition (HFCVD).

Similarly, when forming the second grinding assembly 12, the second body portion 120' is formed first, and then the second diamond layer 122 is formed to cover the second body portion 120', and the second body portion 120' also includes the first The second base 120a and a plurality of second protrusions 120b protruding from the surface of the second base 120a. The second diamond layer 122 cooperates with the plurality of second protrusions 120b to form a plurality of second cutting edge portions 121t.

In this embodiment, the sharpness of the second cutting edge 121 is greater than that of the first cutting edge 111, or the distribution density of the second cutting edge 121 is smaller than that of the first cutting edge 111. The abrasive component 12 has a higher material removal rate to the polishing pad. In addition, the total thickness of the first body portion 110' will be greater than the total thickness of the second body portion 120'.

After that, as shown in FIG. 16B, the first grinding component 11 and the second grinding component 12 are respectively assembled in the first predetermined area 101 a and the second predetermined area 101 b to form the polishing pad trimming device P1. Since the total thickness of the first body portion 110' is greater than the total thickness of the second body portion 120', the height of the tip 111t of the first cutting edge portion 111 relative to the bottom surface is greater than that of the tip 121t of the second cutting edge portion 121 The height of the bottom.

Accordingly, there are different embodiments of the manufacturing method of the polishing pad trimming device of the embodiment of the present invention. As long as the material removal rate of the second polishing assembly 12 to the polishing pad can be greater than the material removal rate of the first polishing assembly 11 to the polishing pad, and the tip 111t of the first polishing blade 111 is compared to the second polishing blade The tip 121t of 121 protrudes, and the present invention does not limit the manufacturing method of the polishing pad dressing device.

Based on the above, the beneficial effect of the present invention is that in the polishing pad dressing device P1, the manufacturing method of the polishing pad dressing device, and the polishing pad dressing method provided by the technical solutions of the present invention, the polishing pad dressing device P1 has the first grinding by The structure 11S and the second grinding structure 12S, and the material removal rate of the first grinding structure 11S to the polishing pad G1 is less than the material removal rate of the second grinding structure 12S to the polishing pad G1. The height of the tip 121t of the second cutting edge portion 121 relative to the bottom surface 102 is lower than the height of the tip 111t of the first cutting edge portion 111 relative to the bottom surface 102, so that the polishing pad dressing device P1 of the embodiment of the present invention dresses the polishing pad G1 When the material removal rate is increased, the polishing surface G11 can have a lower surface roughness, so that the polishing pad is suitable for polishing wafers with a thin line width.

On the other hand, when the polishing pad dressing device P1 of the embodiment of the present invention is used to dress the polishing surface G11 of the polishing pad G1, the polishing pad G1 will be in contact with the second polishing structure 12S and the first polishing structure 11S simultaneously in the first dressing stage To increase the material removal rate. In the second dressing stage, the polishing pad G1 only contacts the first abrasive structure 11S to reduce the surface roughness of the polishing surface G11. In this way, the polishing pad dressing device P1 and the dressing method using the same in the embodiment of the present invention can not only shorten the time for dressing the polishing pad G1, but also make the polishing surface G11 of the polishing pad G1 have a lower surface roughness.

The content disclosed above is only a preferred and feasible embodiment of the present invention, and does not limit the scope of the patent application of the present invention, so all equivalent technical changes made by using the description and drawings of the present invention are included in the application of the present invention. Within the scope of the patent.

P1‧‧‧Polishing pad dressing device

10‧‧‧Base

101‧‧‧Joint surface

101a‧‧‧The first preset area

101b‧‧‧The second preset area

102‧‧‧Bottom

11‧‧‧First grinding component

11S‧‧‧First grinding structure

111t‧‧‧First cutting tip

110‧‧‧The first joint layer

L1‧‧‧First reference surface

111‧‧‧First grinding blade

12‧‧‧Second grinding component

121‧‧‧Second grinding blade

12S‧‧‧Second grinding structure

121t‧‧‧second cutting tip

L2‧‧‧Second reference surface

120‧‧‧The second joint layer

H‧‧‧Vertical height difference

H1, H2‧‧‧ Height

D1, D2‧‧‧spacing

Claims (13)

A polishing pad dressing method includes: providing a polishing pad dressing device, which includes a base, a first grinding component, and a second grinding component, the base has a bonding surface and a bottom surface opposite to the bonding surface , The first grinding component is disposed on the joining surface and has a first grinding structure, and the first grinding structure has a plurality of first grinding blades, and the second grinding component is disposed on the joining surface And has a second grinding structure, and the second grinding structure has a plurality of second grinding blades; wherein, the material removal rate of the second grinding structure to the polishing pad is greater than that of the first grinding structure The material removal rate of the polishing pad, and the height of the tip of the second grinding blade portion relative to the bottom surface is lower than the height of the tip of the first grinding blade portion relative to the bottom surface; In a dressing stage, a first polishing pressure is applied to a polishing pad by the polishing pad dressing device, so that a polishing surface of the polishing pad is contacted by the first polishing structure and the second polishing structure; and In a second dressing stage, a second polishing pressure less than the first polishing pressure is applied to the polishing pad by the polishing pad dressing device, so that the polishing surface is only contacted by the first abrasive structure Without being contacted by the second abrasive structure. The polishing pad trimming method according to claim 1, wherein the surface polishing accuracy of the first polishing structure on the polishing pad is higher than the surface polishing accuracy of the second polishing structure on the polishing pad. The polishing pad trimming method according to claim 1, wherein the top-view pattern of the first abrasive component and the top-view pattern of the second abrasive component form a point-symmetric pattern or a line-symmetric pattern. The polishing pad trimming method according to claim 1, wherein the second grinding assembly is located in a central area of the bonding surface, the first grinding assembly includes a plurality of first grinding units dispersedly arranged from each other, and a plurality of The first grinding unit surrounds the second grinding assembly. The polishing pad trimming method according to claim 1, wherein the first grinding assembly includes a plurality of first grinding units dispersedly arranged with each other, and the second grinding assembly includes a plurality of second grinding units dispersedly arranged with each other, The plurality of first grinding units and the plurality of second grinding units are alternately arranged and arranged around the center of the base. The polishing pad trimming method according to claim 1, wherein the sharpness of the second grinding blade portion is greater than the sharpness of the first grinding blade portion. The polishing pad trimming method according to claim 1, wherein the bonding surface defines a first preset area for setting the first abrasive component and a second pre-set for setting the second abrasive component It is assumed that the height of the joint surface relative to the bottom surface in the first preset area is greater than the height of the joint surface relative to the bottom surface in the second preset area. The polishing pad dressing method according to claim 1, wherein the tips of the three highest grinding blade portions form a first reference surface, and the tips of the three second grinding blade portions form a second reference And the vertical height difference between the first reference surface and the second reference surface is between 20 micrometers (μm) and 50 micrometers (μm). The polishing pad trimming method according to claim 1, wherein the bonding surface is a flat surface, the bonding surface defines a first preset area and a second preset area, the first grinding component and the The second grinding component is respectively provided with the first preset area and the second preset area by assembling. The first grinding component includes a first A chassis and the first grinding structure on the first chassis, the second grinding assembly includes a second chassis and the second grinding structure on the second chassis, and the first The thickness of the chassis is greater than the thickness of the second chassis. The polishing pad trimming method according to claim 1, wherein the distribution density of the plurality of first grinding blade portions is greater than the distribution density of the plurality of second grinding blade portions. The polishing pad dressing method according to claim 1, wherein, in the first dressing stage and in the second dressing stage, the polishing pad dressing method further comprises: controlling the polishing pad through a rotating shaft Generate rotation; control the polishing pad dressing device to move in a radial direction of the polishing pad, and control the polishing pad dressing device to rotate through a rotating shaft to dress the polishing surface; and continue spraying a cleaning Liquid on the polishing surface to remove the waste material remaining on the polishing surface. The polishing pad dressing method according to claim 1, wherein the step of providing the polishing pad dressing device further comprises: providing the base; forming the first abrasive assembly, wherein, forming the first abrasive assembly The steps include at least: forming a first body portion, and the first body portion includes a first base portion and a plurality of first protrusions protruding from the surface of the first base portion; and forming a cover on the base The first diamond layer on the surface of the first body portion cooperates with the plurality of first protrusions to form a plurality of first cutting edge portions; Forming the second grinding assembly, wherein the step of forming the second grinding assembly includes at least: forming a second body portion, and the second body portion includes a second base portion and a plurality of protrusions protruding from the A second protrusion on the surface of the second base; and forming a second diamond layer covering the surface of the second body to cooperate with the plurality of second protrusions to form a plurality of second cuts A blade portion, wherein the distribution density of the second cutting edge portion is smaller than that of the first cutting edge portion; and the first grinding component and the second grinding component are provided on the joining surface, and the The height of the tip of the second polishing blade portion relative to the bottom surface is lower than the height of the tip of the first polishing blade portion relative to the bottom surface. The polishing pad trimming method according to claim 12, wherein the material of the first body portion and the second body portion is ceramic or metal, and the first diamond layer and the second diamond layer pass through Chemical vapor deposition process to form.

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