TWI595973B - Chemical mechanical polishing dresser and its manufacturing method - Google Patents

Description

Chemical mechanical polishing dresser and manufacturing method thereof

This work is about the field of chemical mechanical polishing, especially about a chemical mechanical polishing dresser.

Chemical mechanical polishing (CMP) is an indispensable method in semiconductor manufacturing because of its large area flattening. It is a polishing pad placed on the stage. A slurry is added to the surface of the polishing pad, and the polishing pad drives the polishing pad to polish the surface of the wafer to make the surface of the wafer flat for subsequent processes. The surface of the polishing pad needs to maintain a certain roughness to maintain the polishing efficiency. However, during the polishing process, the debris generated by polishing the wafer will mix with the polishing liquid to gradually form a hardened layer on the surface of the polishing pad. The hardened layer reduces the polishing efficiency and thus shortens the life of the polishing pad.

During the polishing process, a CMP pad conditioner is required to continuously trim the surface of the polishing pad to maintain the surface roughness of the polishing pad and extend the life of the polishing pad. However, as the size of the wafer in the semiconductor process increases, the difference between the wafer center and the outer edge of the wafer in the semiconductor process also significantly increases the wafer yield. Therefore, the industry needs to polish the surface of the pad. The requirements for different grinding capabilities are also increasing; likewise, the requirements for different trimming capabilities for each area of the chemical mechanical polishing dresser are also increased.

Taiwan Patent Application No. 97110627 discloses a superhard material cutting tool comprising a base, a plurality of cutting units and a combined unit, the base having a disk shape with a through hole therebetween, and a working surface is formed on one side of the base. The working surface is provided with a plurality of long grooves, the cutting unit is provided with a cutting end, and the cutting end is provided with a plurality of protruding and tapered peaks, the peaks are arranged in parallel, and the first side of each cutting unit is placed In the long groove, a second side of each cutting unit is placed outside the long groove, the cutting The cutting end protrudes from the working surface, and the bonding unit is combined with the cutting unit on the base. In the present case, the groove is used to change the cutting angle of the cutting tool to improve the cutting efficiency of the cutting tool. However, the cutting tool only protrudes from the cutting end, and the cutting unit for cutting (ie, the cutting end) is relatively small relative to the whole cutting unit, and is required to achieve different depths of cut to adjust the trimming of each area. In terms of capacity, the cutting end of each cutting unit must be individually adjusted to protrude the height of the upper surface, which is cumbersome and time consuming, and is not conducive to mass production.

Taiwan Patent Publication No. 201029805A1 discloses a polishing pad dressing device comprising: a dresser drive shaft that is rotatable and vertically movable; and a trimmer flange coupled to the dresser drive shaft for fixing a trim piece a trimmer flange; a ball shaft supported on the trimmer flange for tilting the trimmer drive shaft; and a spring mechanism for generating tilting motion against the trimmer The power. The polishing pad dressing device of the present invention allows the trimming member to tilt the driving shaft of the dresser through the ball bearing, so that the vibration of the dressing device perpendicular to the polishing pad during the trimming process is relieved to a certain extent, Reduce the burden on the dressing device. However, the tilting device of the polishing pad dressing device is inclined to the polishing pad as a whole, and the inclined surface of different tilting angles cannot be locally generated.

Taiwan Patent Application No. 96125259 discloses an apparatus for trimming a polishing pad having a conductive abrasive surface, comprising a backing plate adapted to connect to a trimming head assembly, the backing plate comprising a hard disk having a first side And a second side on the opposite side, the second side of the orientation is perpendicular to the centerline of the backing plate; and a ring member having a base adhered to the second side of the backing plate, Wherein the ring defines a trimmed surface, the trimmed surface being opposite the second side, and the trimming surface is radially inclined relative to the plane of the second side. The apparatus of the present prior art forms a slope by radially tilting the trimming surface of the ring member relative to the second side. However, if a trimming surface having a structure with different heights and beveled is to be processed, the ring member needs to be repeatedly processed in the process, so that the manufacturing process is cumbersome and the height precision is difficult to control.

Therefore, the current chemical mechanical polishing dresser still has room for improvement to meet the industry's requirements for different finishing capabilities in various areas of the chemical mechanical polishing dresser.

The purpose of this creation is to provide a chemical mechanical polishing dresser whose dressing ability can be adjusted according to different regions to meet the requirements of the industry for different dressing capabilities in various areas of the chemical mechanical polishing dresser.

The present invention provides a chemical mechanical polishing conditioner comprising: a substrate having a horizontal top surface; and a plurality of polishing units disposed on a horizontal top surface of the substrate, each polishing unit comprising a polishing unit substrate and an abrasive layer And a bonding layer, the polishing unit substrate has an opposite upper surface and a lower surface, the polishing layer is formed on the upper surface and has a plurality of polishing tips formed between the lower surface and the substrate and facing One side of the lower surface forms a slope.

The CMP polishing dresser of the present invention can adjust the trimming ability of each region of the CMP pad through a polishing unit disposed on the horizontal top surface, and each of the polishing unit substrates is opposite to the substrate due to the slope of the bonding layer The horizontal top surface is inclined, so that the grinding tips can form different cutting depths when trimming the polishing pad, so as to further adjust the trimming ability of different positions in each grinding unit, and meet the needs of the current industry for chemical mechanical polishing dressers. Different requirements for finishing ability.

Preferably, each of the polishing units further includes a spacer disposed on a horizontal top surface of the substrate and disposed on one side of the lower surface, and the bonding layer is formed on the lower surface, The bevel is formed between the pad and the horizontal top surface and facing one of the lower surfaces.

Alternatively, the substrate further has a plurality of recesses, the inner recesses are concavely formed on the horizontal top surface of the substrate, and each of the inner recesses has a bottom surface; each of the grinding units further includes a spacer. The pad is disposed on a bottom surface of the inner recess and is disposed on one side of the lower surface; the bonding layer is formed on the lower surface, between the pad and the bottom surface.

Optionally, the substrate further has a plurality of concave portions, the inner concave portions are formed through the horizontal top surface of the substrate; the chemical mechanical polishing dresser further comprises a bottom plate, the bottom plate having a bottom surface, the bottom surface of the bottom plate Each of the polishing units further includes a pad member, the pad member is disposed in the inner recess portion and disposed on the bottom surface of the bottom plate, and the pad is disposed on the lower surface One side; the bonding layer is formed between the lower surface and the bottom surface. The inner recesses provide a better fixing effect of the polishing units, and the depth of the inner tips relative to the horizontal top surface can be further controlled by the depth of the inner recesses.

Preferably, the height of the tip of one of the polishing tips is higher than the height of the tip of the other side of the polishing tip, and the height of the tip of one of the polishing tips and the height of the tip of the other side of the polishing tip The distance difference between the two is greater than or equal to 3 microns and less than or equal to 50 microns.

Preferably, the substrate has a central axis parallel to the normal to the horizontal top surface of the substrate and located at the center of the horizontal top surface of the substrate, each slope facing the central axis of the substrate .

Alternatively, each of the slopes faces away from the central axis of the substrate.

Alternatively, a portion of the bead of the bonding layer faces the direction of the central axis of the substrate; and another portion of the bevel of the bonding layer faces away from the central axis of the substrate.

Alternatively, each of the slopes faces the pad of the adjacent and ipsilateral grinding unit.

Preferably, the substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate or a plastic substrate or a combination thereof.

Preferably, the thickness of the substrate is greater than or equal to 4 mm and less than or equal to 30 mm.

Preferably, the material of the bonding layer comprises a ceramic material, a brazing material, a plating material or a polymer material; more preferably, the brazing material comprises iron, cobalt, chromium, manganese, cerium, aluminum or a combination thereof. The polymer material comprises an epoxy resin, a polyester resin, a polyacrylic resin or a phenolic resin.

Preferably, the polishing unit substrate is a conductive substrate or an insulating substrate; more preferably, the material of the conductive substrate comprises molybdenum, tungsten or tungsten carbide.

Preferably, the material of the insulating substrate comprises a ceramic material; more preferably, wherein the ceramic material comprises niobium carbide; wherein the single crystal material comprises niobium or aluminum oxide.

Preferably, the material of the insulating substrate comprises a single crystal material; more preferably, the single crystal material comprises bismuth, aluminum oxide or sapphire.

Preferably, a polishing film is further formed on the polishing layer, and the trimming film comprises a ceramic film or a diamond film. The material of the ceramic film comprises alumina, zirconia, tantalum carbide, titanium nitride or aluminum oxide; the material of the diamond film comprises single crystal diamond or polycrystalline diamond.

Preferably, the shortest vertical distance from the tip of each polishing tip to the lower surface of the polishing unit substrate is greater than or equal to 2 mm and less than or equal to 10 mm; more preferably, the tip of each polishing tip is to the polishing unit substrate The shortest vertical distance of the lower surface is greater than or equal to 4 mm and less than or equal to 6 mm; more preferably, the shortest vertical distance from the tip of each polishing tip to the lower surface of the polishing unit substrate is 4 mm.

Preferably, the shape of the polishing tip is a blade shape, a cone shape, an arc shape, a column shape, a pyramid shape or a corner column shape; more preferably, the angle column shape is a quadrangular column shape.

Preferably, the tip end angle of the grinding tip is greater than or equal to 60 degrees and less than or equal to 120 degrees; more preferably, the tip angle of the grinding tip is 60 degrees, 90 degrees or 120 degrees.

Preferably, the thickness of the spacer is greater than or equal to 3 microns and less than or equal to 50 microns.

Preferably, the material of the pad comprises stainless steel or plastic.

The present invention further provides a method for manufacturing a chemical mechanical polishing dresser, comprising: providing a plurality of polishing units; providing a substrate having a horizontal top surface; and pressing one side of each polishing unit against the plurality of spacers, The polishing unit is inclined to contact the horizontal top surface of the substrate; a bonding layer is formed between each of the polishing units and the horizontal top surface of the substrate to obtain the chemical mechanical polishing conditioner.

Preferably, the step of providing the polishing unit comprises: providing a plurality of polishing unit substrates, each of the polishing unit substrates having a relatively upper surface and a lower surface; forming an abrasive layer on the upper surface of the polishing unit substrate to obtain The grinding unit, wherein the abrasive layer has a plurality of abrasive tips.

Preferably, one side of each of the polishing units is respectively abutted against the spacers, so that the polishing units are obliquely contacted with the horizontal top surface of the substrate and the bonding layer is formed on each of the polishing units and the substrate. Between the horizontal top surfaces, the step of obtaining the chemical mechanical polishing conditioner comprises: one side of the lower surface of the polishing unit substrate of each polishing unit is respectively abutted against the spacers and the other side is abutted against the substrate a horizontal top surface, wherein each of the polishing units is obliquely contacted with the horizontal top surface of the substrate; and the bonding layer is formed between the lower surface of each of the polishing unit substrates and the horizontal top surface of the substrate to obtain the chemical mechanical polishing dresser .

Alternatively, wherein one side of each of the grinding units is respectively abutted against the plurality of spacers, and the step of tilting the polishing units to the horizontal top surface of the substrate comprises: providing a planar fixture, the plane treatment Having a jig surface; setting a plurality of mats on the surface of the jig; One side of the polishing layer of each polishing unit is respectively abutted against the spacers and the other side is abutted against the surface of the fixture of the planar fixture; and the substrate is horizontally disposed on the polishing unit substrate of each polishing unit And the step of forming the bonding layer between the polishing unit and the horizontal top surface of the substrate to obtain the chemical mechanical polishing conditioner comprises: Forming the bonding layer between the lower surface of each of the polishing unit substrates and the horizontal top surface of the substrate, and removing the planar fixture and the spacers to obtain the chemical mechanical polishing conditioner.

Preferably, wherein the longest vertical distance from the lower surface to the horizontal top surface is greater than or equal to 3 microns and less than or equal to 50 microns.

Preferably, each of the slopes faces the direction of the central axis of the substrate.

Alternatively, each of the slopes faces away from the central axis of the substrate.

Alternatively, a portion of the bead of the bonding layer faces the direction of the central axis of the substrate; and another portion of the bevel of the bonding layer faces away from the central axis of the substrate.

Preferably, the substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate or a plastic substrate or a combination thereof.

Preferably, the thickness of the substrate is greater than or equal to 4 mm and less than or equal to 30 mm.

Preferably, the material of the bonding layer comprises a ceramic material, a brazing material, a plating material or a polymer material; more preferably, the brazing material comprises iron, cobalt, chromium, manganese, cerium, aluminum or a combination thereof. The polymer material comprises an epoxy resin, a polyester resin, a polyacrylic resin or a phenolic resin.

Preferably, the polishing unit substrate is a conductive substrate or an insulating substrate; more preferably, the material of the conductive substrate comprises molybdenum, tungsten or tungsten carbide.

Preferably, the material of the insulating substrate comprises a ceramic material; more preferably, wherein the ceramic material comprises niobium carbide; wherein the single crystal material comprises niobium or aluminum oxide.

Preferably, the material of the insulating substrate comprises a single crystal material; more preferably, the single crystal material comprises ruthenium or aluminum oxide.

Preferably, the shortest vertical distance from the tip of each polishing tip to the lower surface of the polishing unit substrate is greater than or equal to 2 mm and less than or equal to 10 mm; more preferably, the tip of each polishing tip is to the polishing unit substrate The shortest vertical distance of the lower surface is greater than or equal to 4 mm and less than or equal to 6 mm; more preferably, the shortest vertical distance from the tip of each polishing tip to the lower surface of the polishing unit substrate is 4 mm.

Preferably, the shape of the polishing tip is a blade shape, a cone shape, an arc shape, a column shape, a pyramid shape or a corner column shape; more preferably, the angle column shape is a quadrangular column shape.

Preferably, the tip end angle of the grinding tip is greater than or equal to 60 degrees and less than or equal to 120 degrees; more preferably, the tip angle of the grinding tip is 60 degrees, 90 degrees or 120 degrees.

Preferably, the thickness of the spacer is greater than or equal to 3 microns and less than or equal to 50 microns.

Preferably, the material of the pad comprises stainless steel or plastic.

The chemical mechanical polishing conditioner prepared according to the manufacturing method of the present invention can be configured through the bonding layer in addition to the polishing ability of the polishing unit substrate and the polishing tip regulating the different regions on the chemical mechanical polishing conditioner. Further, the grinding tips on the polishing unit substrates can be formed into successively different cutting depths to meet the requirements of the current industry for different finishing capabilities of the chemical mechanical polishing dresser; and the chemical mechanical polishing of the creation The manufacturing process of the device is simple and will facilitate rapid and large-scale production.

1, 1A, 1B, 1C, 1D, 1E, 1F‧‧‧ chemical mechanical polishing dresser

10, 10A, 10B, 10D, 10E, 10F‧‧‧ substrates

11, 11C, 11D, 11E, 11F‧‧‧ horizontal top surface

12D, 12E‧‧‧ recess

121D‧‧‧ bottom

20, 20A, 20B, 20C, 20D, 20E, 20F‧‧‧ grinding unit

21, 21A, 21B, 21D, 21E, 21F‧‧‧ grinding unit substrate

211, 211A, 211D, 211E‧‧‧

212, 212A, 212D, 212E‧‧‧ cushion side

22, 22A, 22F‧‧‧ grinding layer

221, 221A, 221B, 221F‧‧‧ grinding tips

23, 23A, 23C, 23D, 23E, 23F‧‧‧ pads

24, 24A, 24B, 24D, 24E, 24F‧‧‧ bonding layer

2411, 241A, 241B, 241F‧‧‧ bevel

30E‧‧‧floor

31E‧‧‧Bottom surface

40E‧‧‧ screws

50F‧‧‧Flat fixture

51F‧‧‧ fixture surface

D1‧‧‧ vertical distance

D2‧‧‧distance difference

Fig. 1 is an external view of the first embodiment of the creation.

Figure 2 is a cross-sectional view showing the first embodiment of the creation.

Figure 3 is an external view of the second embodiment of the present invention.

Figure 4 is a cross-sectional view showing a second embodiment of the creation.

Fig. 5 is an external view of the third embodiment of the creation.

Figure 6 is a cross-sectional view showing a third embodiment of the creation.

Figure 7 is an external view of the fourth embodiment of the present invention.

Figure 8 is a cross-sectional view showing a fifth embodiment of the creation.

Figure 9 is a cross-sectional view showing a sixth embodiment of the present invention.

Figure 10 is a cross-sectional view showing a seventh embodiment of the present invention.

Figure 11 is a cross-sectional view showing a seventh embodiment of the present invention and a flat jig and a plurality of mat members.

First embodiment

As shown in FIG. 1 and FIG. 2, the first embodiment of the present invention provides a chemical mechanical polishing conditioner 1 comprising: a substrate 10 and a sixth polishing unit 20, the substrate 10 having a disk shape, and the substrate 10 The material is stainless steel, and the substrate 10 has a thickness of 6 mm. The substrate 10 has a horizontal top surface 11 and a central axis. The central axis is parallel to the normal to the horizontal top surface 11 of the substrate 10 and is located on the substrate 10. The center of the horizontal top surface 11; the polishing units 20 are disposed on the horizontal top surface 11 of the substrate 10, and are arranged in a ring shape around the central axis along the outer edge of the horizontal top surface 11 of the substrate 10, and each polishing unit 20 includes a polishing unit substrate 21, an abrasive layer 22, a spacer 23 and a bonding layer 24. The polishing unit substrate 21 is a conductive substrate, the material of the polishing unit substrate 21 is tungsten carbide, and the polishing unit The substrate 21 has a disk shape, and the polishing unit substrate 21 has a pair of upper surface and a lower surface. The upper surface of the polishing unit substrate 21 can be electrically formed to form a plurality of surface tip patterned surfaces. The polishing layer 22 Chemical vapor deposition The deposition method is deposited on the patterned surface and forms a plurality of polishing tips 221, the polishing layer 22 is composed of polycrystalline diamond, the crystal size of the polycrystalline diamond is 15 nm, the shape of each polishing tip 221 is pyramidal, and the tip angle of each polishing tip 221 is 60 degrees, and the tip of each polishing tip 221 The shortest vertical distances d1 to the lower surface of the polishing unit substrate 21 are equal, and the shortest vertical distance d1 from the tip end of each of the polishing tips 221 to the lower surface of the polishing unit substrate 21 is 4 mm.

The lower surface of the polishing unit substrate 21 has a pair of abutting sides 211 and a padding side 212. The abutting side 211 abuts against the horizontal top surface 11 of the substrate 10, and the padding side 212 abuts against The pad member 23 is such that the height of the tip end of the polishing tip 221 on one side is higher than the height of the tip end of the polishing tip 221 on the other side, in other words, the tip end of the grinding tip 221 on the same side as the pad side 212. The height is higher than the height of the tip end of the grinding tip 221 on the same side as the abutting side 211, and the height of the tip end of the grinding tip 221 on the same side of the pad side 212 and the grinding tip on the same side as the abutting side 211 The distance d2 between the heights of the tops of 221 is 10 microns.

The pad member 23 has a long shape, and the material of the pad member 23 is stainless steel. The pad member 23 is attached to the horizontal top surface 11 of the substrate 10. In other words, the pad member 23 is disposed on the padding member 23 The pad side of the unit substrate 21 is grounded, and the thickness of the pad 23 is 10 micrometers.

The bonding layer 24 is formed on the lower surface of the polishing unit substrate 21, between the horizontal top surface 11 of the substrate 10 and the pad member 23. The bonding layer 24 has a slope 241 formed on the polishing unit substrate. The lower surface is facing the direction of the central axis of the substrate 10, and the material of the bonding layer 24 is iron.

The chemical mechanical polishing dresser 1 can adjust the trimming ability of each region of the chemical mechanical polishing conditioner 1 through the polishing units 20 disposed on the horizontal top surface 11 of the substrate 10, and each of the polishing unit substrates 21 is disposed. The arrangement of the member 23 and the inclined surface 241 of the bonding layer 24 is inclined with respect to the horizontal top surface 11 of the substrate 10, so that the polishing tips 221 can form successively different cutting depths when the polishing pad is trimmed to further adjust the grinding. The ability to trim at different locations in unit 20.

Second embodiment

As shown in FIG. 3 and FIG. 4, the chemical mechanical polishing conditioner 1A of the second embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1 of the first embodiment, except that the material of the substrate 10A is A ceramic material, and the substrate 10A has a thickness of 10 mm.

The number of the polishing units 20A is three, and the polishing unit substrate 21A has an arc shape, and the polishing unit substrate 21A is an insulating substrate. The material of the polishing unit substrate 21A is tantalum carbide, and the polishing unit substrate 21A Having a flat surface, the polishing layer 22A is deposited on the flat surface by chemical vapor deposition and forms a plurality of polishing tips 221A, and the shortest vertical distance d1 from the tip end of each polishing tip 221A to the lower surface of the polishing unit substrate 21A The difference d2 between the height of the tip end of the polishing tip 221A on the same side of the pad side 212A and the height of the tip end of the polishing tip 221A on the same side of the abutting side 211A is 20 μm.

The material of the pad member 23A is plastic, and the thickness of the pad member 23A is 20 micrometers.

The material of the bonding layer 24A is an epoxy resin, and the slope 241A faces in a direction away from the central axis of the substrate.

The chemical mechanical polishing dresser 1A of the second embodiment of the present invention is realized by the change of the shape of the chemical mechanical polishing dresser 1 of the first embodiment through the grinding unit substrate 21A and the surface of the inclined surface 241A of the different bonding layer 24A. The chemical mechanical polishing conditioner 1 of the first embodiment has different dressing capabilities.

Third embodiment

As shown in FIG. 5 and FIG. 6, the chemical mechanical polishing conditioner 1B of the third embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1 of the first embodiment, except that the polishing unit 20B is The number of the polishing unit substrates 21B is elongated, and the polishing units 20B are arranged in a cross shape; each of the polishing tips 221B has a quadrangular prism shape and the tip angle of each of the polishing tips 221B is 90 degrees; And a portion of the beveled surface 241B of the bonding layer 24B faces the center of the substrate 10B. In the direction of the axis, the other portion of the beveled surface 241B of the bonding layer 24B faces away from the central axis of the substrate 10B.

The chemical mechanical polishing dresser 1B of the third embodiment of the present invention achieves the same principle as the chemical mechanical polishing dresser 1 of the first embodiment through the different shapes of the polishing tips 221B and the faces of the inclined surfaces 241B of the different bonding layers 24B. The chemical mechanical polishing conditioner 1 of one embodiment has different finishing capabilities.

The chemical mechanical polishing dresser of the present invention can align the arrangement of the grinding units and the position of the polishing unit, the shape of the outer surface of the polishing unit, and the longest vertical distance from the lower surface of the polishing unit substrate to the horizontal top surface of the substrate. (ie the degree of tilt), the change in the shape of the grinding tip or the orientation of the bevel of the bonding layer to regulate the trimming ability of each area of the chemical mechanical polishing dresser to meet the current industry's need for different finishing capabilities for various areas of the chemical mechanical polishing dresser. Requirements.

The present invention further provides a method of manufacturing a chemical mechanical polishing conditioner comprising the following steps.

First, a substrate is prepared having a horizontal top surface, and then a plurality of pads are attached to the horizontal top surface of the substrate.

Next, a plurality of polishing unit substrates are prepared, the number of the polishing unit substrates being the same as the number of the spacers, and each of the polishing unit substrates has an upper surface and a lower surface.

Forming an abrasive layer on the upper surface of the polishing unit substrate, and the polishing layer has a plurality of polishing tips, and the polishing layer is formed by depositing the polishing layer on the upper surface by chemical vapor deposition, and the material of the polishing layer comprises Crystal diamonds.

The lower surface of the polishing unit substrate has opposite sides, and the two sides are respectively abutting side and a padding side, and the bottom surface of the polishing unit substrate is placed against the corresponding pad. The abutting side is against the horizontal top surface of the substrate.

Filling a bonding layer between the spacer, the lower surface and the horizontal top surface to obtain the chemical mechanical polishing conditioner, and the bonding layer forms a slope on a lower surface of the polishing unit substrate, the bonding layer The material is epoxy resin. The manufacturing method of the chemical mechanical polishing dresser of the present invention is simple, and is suitable for rapid and large-scale production, and the prepared chemical mechanical polishing dresser can adjust the chemical mechanical polishing dresser through the grinding unit substrate and the grinding tips. The finishing ability of the different regions, and through the arrangement of the bonding layer and the spacer, further enables the grinding tips on the polishing unit substrates to form different cutting depths to meet the current industry for chemical mechanical polishing Each area of the unit needs to have different finishing capabilities.

Fourth embodiment

As shown in FIG. 7, the chemical mechanical polishing dresser 1C of the fourth embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1 of the first embodiment, except that each inclined surface faces adjacent and ipsilateral. The pad 23C of the grinding unit 20C, in other words, the direction of the bevels varies along the outer edge of the horizontal top surface 11C.

When the chemical mechanical polishing dresser 1C is used to trim the surface of the polishing pad, the direction of the inclined surfaces is the same as the direction of rotation of the chemical mechanical polishing dresser 1C, so that the surface of the chemical mechanical polishing dresser 1C and the polishing pad can be The resistance is reduced, which indirectly extends the life of the chemical mechanical polishing dresser 1C.

Fifth embodiment

As shown in FIG. 8, the chemical mechanical polishing conditioner 1D of the fifth embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1 of the first embodiment, except that the substrate 10D further has a plurality of concave portions 12D. The inner concave portion 12D is concavely formed on the horizontal top surface 11D, and the inner concave portions 12D are arranged in a ring shape around the central axis along the outer edge of the horizontal top surface 11D, and each inner concave portion 12D has a bottom surface 121D; The pad member 23D is attached to the bottom surface 121D of the inner recessed portion 12D. The abutting side 211D of the polishing unit substrate 21D abuts against the bottom surface 121D of the inner recessed portion 12D. The polishing unit substrate 21D The pad side 212D is abutted against the pad 23D; the bonding layer 24D is filled between the lower surface of the polishing unit substrate 21D, the bottom surface 121D of the inner recess 12D and the pad 23D.

The chemical mechanical polishing dresser 1D of the fifth embodiment of the present invention provides a better fixing effect of the polishing unit 20D than the chemical mechanical polishing dresser 1 of the first embodiment through the inner concave portions 12D.

Sixth embodiment

As shown in FIG. 9, the chemical mechanical polishing conditioner 1E of the sixth embodiment of the present invention is substantially the same as the chemical mechanical polishing conditioner 1 of the first embodiment, except that the substrate 10E further has a plurality of concave portions 12E. The inner recessed portions 12E are integrally formed on the horizontal top surface 11E, and the inner recessed portions 12E are arranged in a ring shape around the central axis along the outer edge of the horizontal top surface 11E; the chemical mechanical polishing trimmer 1E further includes a The bottom plate 30E has a bottom plate surface 31E. The bottom plate surface 31E is attached to the substrate 10E and opposite to the horizontal top surface 11E. In the embodiment, the bottom plate 31E is locked to the substrate by a plurality of screws 40E. 10A, the pad member 23E is located in the inner recessed portion 12E and is attached to the bottom plate surface 31E of the bottom plate 30E. The abutting side 211E of the polishing unit substrate 21E abuts against the bottom plate surface 31E of the bottom plate 30E. The pad side 212E of the unit substrate 21E abuts against the pad 23E; the bonding layer 24E is filled between the lower surface of the polishing unit substrate 21E, the bottom surface 31E of the bottom plate 30E, and the pad 23E.

The chemical mechanical polishing dresser 1E of the sixth embodiment of the present invention provides a better fixing effect of the polishing unit 20E than the chemical mechanical polishing dresser 1 of the first embodiment through the inner concave portions 12E.

Seventh embodiment

As shown in FIG. 10, the present invention further provides a chemical mechanical polishing dresser 1F, comprising: a substrate 10F and a plurality of polishing units 20F, the substrate 10F having a horizontal top surface 11F; the polishing units 20F are disposed on the substrate 10F The horizontal top surface 11F, each of the polishing units 20F includes a polishing unit substrate 21F, a polishing layer 22F and a bonding layer 24F, the polishing unit substrate 21F has an opposite upper surface and a lower surface, the polishing layer 22F is formed on the upper surface and has a plurality of polishing tips 221F, and the bonding layer 24F is formed thereon. A slope 241F is formed between the lower surface and the horizontal top surface 11F and facing one of the lower surfaces.

As shown in Fig. 11, the present invention further provides a method of manufacturing the above-described chemical mechanical polishing conditioner 1F, which comprises the following steps.

First, a flat jig 50F having a jig surface 51F is attached, and then a plurality of pad members 23F are attached to the jig surface 51F.

Next, the polishing unit substrates 21F are prepared, and the number of the polishing unit substrates 21F is the same as the number of the spacers 23F, and each of the polishing unit substrates 21F has the upper surface and the lower surface.

The polishing layer 22F is formed on the surface of the polishing unit substrate 21F, and the polishing layer 22F has the polishing tips 221F. The polishing layer 22F is formed by depositing the polishing layer 22F on the upper surface by chemical vapor deposition. The material of the abrasive layer 22F comprises a polycrystalline diamond.

One side of the polishing layer 22F is abutted against the spacer 23F, and the other side is abutted against the jig surface 51F so that the lower surface of the polishing unit substrate 21F is inclined.

The substrate 10F is further prepared, the substrate 10F has the horizontal top surface 11F, and the horizontal top surface 11F of the substrate 10F abuts against the side of the lower surface of the polishing unit substrate 21F, and the substrate 10F and the planar fixture 50F is level.

Finally, the bonding layer 24F is filled between the substrate 10F and the lower surface of the polishing unit substrate 21F, and the planar fixture 50F and the spacers 23F are removed to obtain the chemical mechanical polishing trimmer 1F. The bonding layer 24F forms the slope 241F on the lower surface of the polishing unit substrate 21F, and the material of the bonding layer 24F is epoxy resin.

The chemical mechanical polishing dresser produced by the manufacturing method of the chemical mechanical polishing dresser of the present invention can adjust the trimming ability of different areas on the chemical mechanical polishing dresser through the grinding unit substrate and the grinding tips, and can also pass through The combination of the bonding layers further enables the grinding tips on the polishing unit substrates to form successively different cutting depths to meet the current requirements for different finishing capabilities of the chemical mechanical polishing dresser. The manufacturing method of the chemical mechanical polishing dresser of the present invention is simple, and is quite suitable for rapid and large-scale production.

The above description is only illustrative of the present invention, and is not intended to limit the scope of the present invention. The scope of the present invention is defined by the scope of the patent application, and is not limited to the above embodiments. Any equivalents of the above-disclosed technical contents may be modified or modified to equivalent variations, without departing from the scope of the present invention. The content of the technical solution, any simple modification, equivalent change and modification of the above embodiment according to the technical essence of the present invention are still within the scope of the technical solution of the present invention.

1‧‧‧Chemical mechanical polishing dresser

10‧‧‧Substrate

11‧‧‧ horizontal top

20‧‧‧grinding unit

21‧‧‧ Grinding unit substrate

211‧‧‧ by the side

212‧‧‧The side of the pad

22‧‧‧Abrasive layer

221‧‧‧ grinding tip

23‧‧‧Materials

24‧‧‧Combination layer

241‧‧‧Bevel

D1‧‧‧ vertical distance

D2‧‧‧distance difference

Claims (20)

A chemical mechanical polishing conditioner comprising: a substrate having a horizontal top surface; and a plurality of polishing units disposed on a horizontal top surface of the substrate, each polishing unit comprising a polishing unit substrate, a polishing layer and a combination a layer, the polishing unit substrate has a pair of upper surface and a lower surface, the polishing layer is formed on the upper surface and has a plurality of polishing tips formed between the lower surface and the substrate and facing the lower surface Forming a slope on one side; the height of the tip of one of the polishing tips is higher than the height of the tip of the other side of the polishing tip, and the height of the tip of one side of the polishing tip and the height of the tip of the other side of the polishing tip The distance difference between the two is greater than or equal to 3 microns and less than or equal to 50 microns. The chemical mechanical polishing conditioner according to claim 1, wherein each of the polishing units further comprises a spacer disposed on a horizontal top surface of the substrate and disposed on one side of the lower surface, and the bonding A layer is formed on the lower surface, between the spacer and the horizontal top surface, and the slope is formed on a surface facing the lower surface. The chemical mechanical polishing conditioner according to claim 1, wherein the substrate further has a plurality of concave portions, the inner concave portions are concavely formed on the horizontal top surface of the substrate, and each of the inner concave portions has a bottom surface; each of the polishing units further comprises a a pad member is disposed on a bottom surface of the inner recess portion and is disposed on one side of the lower surface; the bonding layer is formed on the lower surface, between the pad member and the bottom surface. The chemical mechanical polishing conditioner according to claim 1, wherein the substrate further has a plurality of concave portions penetrating the horizontal top surface of the substrate; the chemical mechanical polishing conditioner further comprises a bottom plate, the bottom plate having a surface of the bottom plate, the surface of the bottom plate is disposed on the substrate and opposite to the horizontal top surface; each of the polishing units further includes a pad member located in the inner concave portion and disposed on the bottom surface of the bottom plate, and the pad The setting pad is disposed on one side of the lower surface; the bonding layer is formed between the lower surface and the bottom surface. A chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein each of the slopes faces in a direction of a central axis of the substrate. A chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein each of the slopes faces in a direction away from a central axis of the substrate. The chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein a portion of the bonding layer has a slope facing the central axis of the substrate; and another portion of the bonding layer has a slope facing away from the substrate The direction of the center axis. A chemical mechanical polishing conditioner according to any one of claims 2 to 4, wherein each of the slopes faces the pad of the adjacent and ipsilateral grinding unit. The chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein the substrate is a stainless steel substrate, a mold steel substrate, a metal alloy substrate, a ceramic substrate or a plastic substrate or a combination thereof. A chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein the thickness of the substrate is greater than or equal to 4 mm and less than or equal to 30 mm. The chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein the material of the bonding layer comprises a ceramic material, a brazing material, a plating material or a polymer material. The chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein the polishing unit substrate is a conductive substrate or an insulating substrate, and the material of the conductive substrate comprises molybdenum, tungsten or tungsten carbide; and the insulating substrate The material comprises a ceramic material or a single crystal material, the ceramic material comprises tantalum carbide, and the single crystal material comprises tantalum, aluminum oxide or sapphire. A chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein the polishing layer further comprises a finishing film comprising a ceramic film or a diamond film. The chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein a shortest vertical distance from a tip end of each of the polishing tips to a lower surface of the polishing unit substrate is greater than or equal to 2 mm and less than or equal to 10 mm. The chemical mechanical polishing conditioner according to any one of claims 1 to 4, wherein the shape of the polishing tip is a blade shape, a cone shape, an arc shape, a column shape, a pyramid shape or a prism shape. A chemical mechanical polishing conditioner according to any one of claims 2 to 4, wherein the thickness of the spacer is greater than or equal to 3 and less than or equal to 50 micrometers. A chemical mechanical polishing conditioner according to any one of claims 2 to 4, wherein the material of the gasket comprises stainless steel or plastic. A method for manufacturing a chemical mechanical polishing dresser, comprising: providing a plurality of polishing unit substrates, each of the polishing unit substrates having a relatively upper surface and a lower surface; forming an abrasive layer on an upper surface of each of the polishing unit substrates to obtain a plurality of polishing a unit, wherein the polishing layer has a plurality of polishing tips; a substrate is provided having a horizontal top surface; and one side of each polishing unit is respectively abutted against the plurality of spacers, so that the polishing units are obliquely contacted with the substrate a horizontal top surface, wherein a height of a top end of the polishing tip on one side of each of the polishing units is higher than a height of a top end of the polishing tip on the other side, and a height of the top end of the polishing tip of the one side and the The difference in height between the heights of the tips of the other side of the grinding tip is greater than or equal to 3 microns and less than or equal to 50 microns; forming a bonding layer between the lower surface of each polishing unit and the horizontal top surface of the substrate to obtain the chemistry A mechanical polishing dresser, wherein the bonding layer forms a slope on a side facing the lower surface. The method of manufacturing a chemical mechanical polishing conditioner according to claim 18, wherein the step of respectively affixing each of the polishing units to the spacers so that the polishing units are obliquely contacted with the horizontal top surface of the substrate The method comprises: placing one side of the lower surface of the polishing unit substrate of each polishing unit against the spacers and the other side against the horizontal top surface of the substrate, so that the polishing units are obliquely contacted with the substrate The horizontal top surface. The method of manufacturing a chemical mechanical polishing conditioner according to claim 18, wherein the one side of each of the polishing units is respectively abutted against the plurality of spacers, and the steps of the polishing units being obliquely contacted with the horizontal top surface of the substrate The method comprises: providing a flat fixture, the surface fixture has a fixture surface; and a plurality of spacers are disposed on the surface of the fixture; and one side of the polishing layer of each polishing unit is respectively abutted against the spacers And the other side is placed on the surface of the fixture of the flat fixture; and the substrate is horizontally disposed on the lower surface of the polishing unit substrate of each polishing unit, so that each polishing unit is obliquely contacted with the horizontal top surface of the substrate; And forming the bonding layer between the lower surface of each polishing unit and the horizontal top surface of the substrate, the step of obtaining the chemical mechanical polishing conditioner comprises: forming the bonding layer on the lower surface of each polishing unit substrate and the level of the substrate Between the top surfaces, and removing the planar fixture and the cushioning members to obtain the chemical mechanical polishing conditioner.