TWI406736B - Tool having sintered-body abrasive portion and method for producing the same - Google Patents
Tool having sintered-body abrasive portion and method for producing the same Download PDFInfo
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- TWI406736B TWI406736B TW095131436A TW95131436A TWI406736B TW I406736 B TWI406736 B TW I406736B TW 095131436 A TW095131436 A TW 095131436A TW 95131436 A TW95131436 A TW 95131436A TW I406736 B TWI406736 B TW I406736B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/12—Dressing tools; Holders therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/2457—Parallel ribs and/or grooves
- Y10T428/24579—Parallel ribs and/or grooves with particulate matter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24612—Composite web or sheet
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
本發明係關於一種具有燒結體研磨部位之工具及其製造方法,特別係關於一種用於以硬質胺甲酸乙酯構成之化學性機械性研磨(Chemical-mechanical polishing;CMP)襯墊、高平面度且高效率地加工各種半導體材料之研磨工具及其有效的製造方法。The present invention relates to a tool having a sintered body polishing portion and a method of manufacturing the same, and more particularly to a chemical-mechanical polishing (CMP) liner for high-flatness. And an abrasive tool for processing various semiconductor materials and an efficient manufacturing method thereof with high efficiency.
近年來,隨著LSI元件配線多層化的發展,漸已利用CMP於層間絕緣膜、矽等金屬膜晶圓的平坦化。為維持在CMP中所使用的研磨襯墊(通常係硬質發泡聚胺甲酸乙酯製品)的高平坦度及晶圓研磨速度,必須持續或間歇地修整該研磨襯墊的表面。In recent years, with the development of multilayer wiring of LSI devices, CMP has been used to planarize metal film wafers such as interlayer insulating films and germanium. In order to maintain the high flatness and wafer polishing speed of the abrasive pad (usually a rigid foamed polyurethane) used in CMP, the surface of the polishing pad must be continuously or intermittently trimmed.
先前修整研磨襯墊時,係使用以電沉積(electrodeposition)將鑽石砥粒固著於基板的工具。如此的電沉積的修整用工具,舉例來說,已知有一種旋轉研磨工具,其構成為:分別於圓板形基台的圓形表面的中央設置未配置砥粒的中空領域,於其外側設置第一砥粒層領域,再於其外側設置第二砥粒層領域;在第一砥粒層領域,以預定間隔設置複數列小砥粒層部;各小砥粒層部,係將超砥粒以金屬鍍膜層的方式固著於其略呈部分球面狀的隆起部的表面上而成;在第二砥粒層領域,係將超砥粒以金屬鍍膜層的方式固著於環狀的圓周隆起部上(專利文獻1)。When the polishing pad was previously trimmed, a tool for fixing the diamond particles to the substrate by electrodeposition was used. Such a electrodeposition finishing tool, for example, is known as a rotary grinding tool which is configured such that a hollow field in which no particles are disposed is disposed in the center of a circular surface of a circular plate-shaped abutment, respectively a first layer of granules is disposed, and a second layer of granules is disposed on the outer side thereof; in the field of the first layer of granules, a plurality of layers of small granules are arranged at predetermined intervals; each layer of granules is super The ruthenium particles are fixed on the surface of the slightly spherical portion of the ridge portion by means of a metal coating layer; in the field of the second ruthenium layer, the ruthenium particles are fixed to the ring by means of a metal coating layer. On the circumferential ridge portion (Patent Document 1).
如此的電沉積型的工具,由於僅藉由電沉積的鎳的物理性固著,將砥粒固著於基板,所以未必能滿足保持力,使用中鑽石砥粒會脫落,工具的壽命尚有待改善。In such an electrodeposition type tool, since the cerium particles are fixed to the substrate only by the physical fixation of the electrodeposited nickel, the holding force may not be satisfied, and the diamond granules may fall off during use, and the life of the tool remains to be awaited. improve.
另外,亦有一種習知的研磨工具,包含以樹脂接著劑將鑽石等所構成之砥粒固著於圓形旋轉平面上之砥材層,該砥材層表面設有放射狀及同心圓狀的縫(專利文獻2)。In addition, there is also a conventional abrasive tool comprising a enamel layer which is fixed by a resin adhesive to a circular rotating plane, and has a radial and concentric shape on the surface of the enamel layer. Seam (Patent Document 2).
但藉由樹脂接著劑未必能達到滿足砥粒的保持強度的程度,因用途的不同而無法達到充分的工具壽命,另外,電沉積的工具亦無法達到可滿足的程度。However, it is not always possible to achieve the degree of retention of the granules by the resin adhesive, and it is not possible to achieve a sufficient tool life due to the use, and the electrodeposition tool cannot be satisfied.
另外,具有凸部之金屬基部的作用面上,以氣相合成法形成多結晶鑽石薄膜而成的修整器亦為一習知技術(專利文獻3)。Further, a dresser in which a polycrystalline diamond thin film is formed by a vapor phase synthesis method on a working surface of a metal base having a convex portion is also known (Patent Document 3).
但以氣相合成法形成鑽石薄膜時,難以忠實地依金屬基部的小凹凸而形成,未必能得到充分的精度,另外,薄膜與金屬基部之間的接合力亦並不充分。However, when a diamond thin film is formed by a vapor phase synthesis method, it is difficult to faithfully form a small uneven portion of a metal base portion, and sufficient precision is not necessarily obtained, and the bonding strength between the film and the metal base portion is also insufficient.
上述之習知研磨工具(襯墊修整器)係於基板(金屬基部)上固著粒子直徑各異的複數個砥粒粒子的構造,因此,難以得到相同的砥粒(頂點)平面。修整時,僅使用到最突出於基板(金屬基部)的粒子,造成過度負荷的這些粒子消耗激烈,常造成在到達工具原本的壽命之前即無法使用之情況。The above-described conventional polishing tool (pad conditioner) has a structure in which a plurality of particle particles having different particle diameters are fixed on a substrate (metal base), and thus it is difficult to obtain the same grain (vertex) plane. In the trimming process, only the particles that are most prominent on the substrate (metal base) are used, and the particles that cause excessive load are consumed intensely, often resulting in failure to use the tool before it reaches the original life.
如可利用發泡胺甲酸乙酯製的研磨襯墊、及不取決於游離砥粒而是將鑽石等的超砥粒固定在剛性金屬製的金屬基部表面上而成的工具,加工矽等的晶圓,,即可達成節約修整的時間與經費的目的,但是為了達成上述目的,被配置於金屬基部上,用來構成刃部之鑽石等的超砥粒層,必須具有高精度的平面,且需要加以保持。但以這些工具並無法充分地達成。For example, a polishing pad made of a foaming urethane and a tool for fixing a super-fine particle such as a diamond to a surface of a metal base made of a rigid metal without depending on the free granules can be used. In the wafer, the time and cost of the trimming can be achieved. However, in order to achieve the above-mentioned purpose, the super-grain layer of the diamond or the like which is disposed on the metal base to form the blade must have a high-precision plane. And need to be maintained. But these tools are not fully achieved.
[專利文獻1]日本專利公開公報特開2002-337050號[專利文獻2]日本專利公開公報特開2004-291184號[專利文獻3]日本專利公開公報特開平10-071559號[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei.
有鑑於上述問題,本發明之目的係提供一種可高效率地加工之研磨工具以及其有效地製造方法,以解決砥粒固著於基板的強度問題、研磨面不均等等問題。特別係提供一種作為CMP襯墊修整器,高精度、高效率地加工半導體晶圓等的表面之研磨工具。In view of the above problems, an object of the present invention is to provide an abrasive tool which can be efficiently processed and an effective manufacturing method thereof, which solves the problems of the strength of the ruthenium particles fixed to the substrate, the unevenness of the polishing surface, and the like. In particular, an abrasive tool for processing a surface of a semiconductor wafer or the like with high precision and high efficiency as a CMP pad conditioner is provided.
本發明的發明人,為了要解決前述問題而深入地研究時,發現對於具有由超砥粒燒結體所構成的研磨部位之研磨工具,藉由於研磨部位形成特定的複數個研磨單位,可以解決此種問題,進一步持續研究的結果,而完成本發明。The inventors of the present invention have intensively studied in order to solve the above problems, and have found that the polishing tool having the polishing portion composed of the super-sintered sintered body can be solved by forming a specific plurality of polishing units by the polishing portion. The problem is further sustained by the results of the study, and the present invention has been completed.
亦即,本發明係關於一種研磨工具,係具有由超砥粒燒結體所構成的研磨部位之研磨工具,其中研磨部位包含具有頂部之複數個研磨單位,各頂部相互地大約位於同一平面上。That is, the present invention relates to an abrasive tool which is an abrasive tool having a polishing portion composed of a super-sintered sintered body, wherein the polishing portion includes a plurality of polishing units having a top portion, each of which is located on the same plane with respect to each other.
進而,本發明係關於前述研磨工具,其中該研磨部位,係由與超硬合金的打底材料燒結成一體的超砥粒燒結體所構成;該研磨單位,係藉由於該研磨部位上設直線溝群而形成。Further, the present invention relates to the above-mentioned polishing tool, wherein the polishing portion is composed of a super-sintered sintered body integrally sintered with a primer material of a super-hard alloy; the polishing unit is formed by a straight line on the polishing portion Formed by a group of grooves.
又,本發明係關於前述研磨工具,其中該頂部開刃。Further, the present invention relates to the aforementioned abrasive tool, wherein the top is edged.
進而,本發明係關於前述研磨工具,其中該研磨單位係四角錐狀或四角錐台狀。Further, the present invention relates to the aforementioned grinding tool, wherein the polishing unit is in the shape of a quadrangular pyramid or a quadrangular frustum.
又,本發明係關於前述研磨工具,其中該研磨單位係四角錐台狀,頂部的至少一邊開刃。Further, the present invention relates to the above-described polishing tool, wherein the polishing unit is in the shape of a quadrangular frustum, and at least one side of the top is edged.
進而,本發明係關於前述研磨工具,其中該研磨單位係三角錐狀或三角錐台狀。Furthermore, the present invention relates to the above-described polishing tool, wherein the polishing unit is in the shape of a triangular pyramid or a triangular frustum.
又,本發明係關於前述研磨工具,其中該研磨單位係三角錐台狀,頂部的至少一邊開刃。Further, the present invention relates to the above-described polishing tool, wherein the polishing unit has a triangular frustum shape, and at least one side of the top is edged.
進而,本發明係關於前述研磨工具,其中該研磨單位頂部的形狀係直線狀的稜線。Further, the present invention relates to the above-described abrasive tool, wherein the shape of the top of the polishing unit is a linear ridge line.
又,本發明係關於前述研磨工具,其中該研磨單位係四角錐狀或三角錐狀,該研磨單位的節距係1500 μ m以下200 μ m以上。Further, the present invention relates to the polishing tool described above, wherein the polishing unit is a quadrangular pyramid shape or a triangular pyramid shape, and the pitch of the polishing unit is 1500 μm or less and 200 μm or more.
進而,本發明係關於前述研磨工具,其中該研磨單位係四角錐狀或三角錐狀,該研磨單位的高度係200 μ m以下30 μ m以上。Furthermore, the present invention relates to the polishing tool described above, wherein the polishing unit has a quadrangular pyramid shape or a triangular pyramid shape, and the height of the polishing unit is 200 μm or less and 30 μm or more.
又,本發明係關於前述研磨工具,其中該超砥粒係鑽石。Further, the present invention relates to the aforementioned grinding tool, wherein the super granule is a diamond.
進而,本發明係關於前述研磨工具,其中鑽石的公稱粒度係40 μ m~60 μ m以下。Further, the present invention relates to the aforementioned grinding tool, wherein the diamond has a nominal particle size of 40 μm to 60 μm or less.
又,本發明係關於前述研磨工具,其中該超砥粒燒結體的厚度係0.1mm以上。Moreover, the present invention relates to the above-described polishing tool, wherein the super-sintered sintered body has a thickness of 0.1 mm or more.
進而,本發明係關於前述研磨工具,其中該研磨工具係圓板狀或圓環狀。Further, the present invention relates to the aforementioned abrasive tool, wherein the abrasive tool is in the form of a disk or an annular shape.
又,本發明係關於前述研磨工具,其中該研磨部位係圓板狀或圓環狀。Further, the present invention relates to the above grinding tool, wherein the polishing portion is in the form of a disk or an annular shape.
進而,本發明係關於前述研磨工具,其中該研磨部位的外徑係90mm以上。Further, the present invention relates to the above polishing tool, wherein the polishing portion has an outer diameter of 90 mm or more.
又,本發明係關於前述研磨工具,其中該研磨部位的溝底至頂部的高度係1mm以下。Further, the present invention relates to the above-mentioned polishing tool, wherein the height of the groove bottom to the top of the polishing portion is 1 mm or less.
進而,本發明係關於前述研磨工具,其中該研磨部位由二或四個分割研磨部所構成,該些分割研磨部係中心角相等的扇形。Furthermore, the present invention relates to the above-described polishing tool, wherein the polishing portion is composed of two or four divided polishing portions, and the divided polishing portions are fan-shaped with the same central angle.
又,本發明係關於前述研磨工具,其中該分割研磨部具有二個溝群;第一溝群係被設成平行於該分割研磨部的半徑方向的邊緣;第二溝群,則被形成垂直於該第一溝群。Furthermore, the present invention relates to the above grinding tool, wherein the divided grinding portion has two groove groups; the first groove group is disposed in a radial direction parallel to the edge of the divided polishing portion; and the second groove group is formed vertically. In the first group of grooves.
進而,本發明係關於前述研磨工具,其中該研磨部位係由三或六個分割研磨部所構成,該些分割研磨部係中心角相等的扇形。Further, the present invention relates to the above-described polishing tool, wherein the polishing portion is composed of three or six divided polishing portions, and the divided polishing portions are fan-shaped with the same central angle.
又,本發明係關於前述研磨工具,其中該分割研磨部具有三個溝群;第一溝群係被設成平行於該分割研磨部的半徑方向的邊緣;第二溝群及第三溝群,則分別被形成相對於第一溝群,以60°及120°的角度交叉Furthermore, the present invention relates to the above-mentioned polishing tool, wherein the divided polishing portion has three groove groups; the first groove group is disposed in a radial direction parallel to the edge of the divided polishing portion; the second groove group and the third groove group , respectively, are formed to intersect with the first groove group at an angle of 60° and 120°
進而,本發明係關於前述研磨工具,其中溝係以線切割放電加工而形成。Further, the present invention relates to the aforementioned grinding tool, wherein the groove is formed by wire-cut electric discharge machining.
又,本發明係關於前述研磨工具,其係CMP襯墊修整器。Further, the present invention relates to the aforementioned grinding tool which is a CMP pad conditioner.
進而,本發明係關於一種具有由超砥粒燒結體所構成的研磨部位之研磨工具的製造方法,包含:(1)將超砥粒燒結在超硬合金的打底材料上而成為一體化,得到超砥粒燒結體之步驟;(2)使所得到的超砥粒燒結體的研磨部位平坦化之步驟;以及(3)設直線溝群於平坦化之該超砥粒研磨體上,形成複數研磨單位,製成研磨部位之步驟。Further, the present invention relates to a method for producing an abrasive tool having a polishing portion composed of a super-sintered sintered body, comprising: (1) sintering super-fine particles on a base material of a super-hard alloy to be integrated; a step of obtaining a super-sintered sintered body; (2) a step of flattening a polished portion of the obtained super-sintered sintered body; and (3) providing a linear groove group on the flattened super-grained abrasive body to form The step of making a plurality of grinding units to form a polishing portion.
又,本發明係關於一種具有由超砥粒燒結體所構成的研磨部位之研磨工具的製造方法,包含:(1)將超砥粒燒結在超硬合金的打底材料上而成為一體化,得到超砥粒燒結體之步驟;(2)從所得到的超砥粒燒結體,裁切出一扇形分割研磨部之步驟;(3)得到與在前述步驟(2)中所得到的扇形分割研磨部中心角相等的複數個扇形分割研磨部之步驟;(4)使所得到的複數個扇形分割研磨部緊密相鄰,並固著於平坦的基板表面上,成為圓板狀或圓環狀的研磨部位之步驟;以及(5)設置溝於在前述步驟(4)中所得到圓板狀或圓環狀的研磨部位的分割研磨部之間的境界,形成複數個研磨單位之步驟。Moreover, the present invention relates to a method for producing an abrasive tool having a polishing portion composed of a super-sintered sintered body, comprising: (1) sintering super-fine particles on a primer material of a super-hard alloy to be integrated; a step of obtaining a super-sintered sintered body; (2) a step of cutting out a sector-shaped divided polishing portion from the obtained super-sized sintered body; (3) obtaining a sector-shaped division obtained in the above step (2) a step of dividing a plurality of sector-shaped divided polishing portions having the same central angle of the polishing portion; (4) bringing the plurality of segment-shaped divided polishing portions obtained in close proximity to each other and fixing the surface of the flat substrate to a flat plate shape or a ring shape And (5) providing a step of forming a plurality of polishing units by forming a groove between the divided polishing portions of the disk-shaped or annular polishing portion obtained in the above step (4).
進而,本發明係關於一種再生方法,係前述所記載的任一研磨工具的再生方法,其中包含藉由線切割放電加工,使溝及研磨單位的頂部再生之步驟。Furthermore, the present invention relates to a method for regenerating a polishing tool according to any one of the above, comprising the step of regenerating the top of the groove and the polishing unit by wire-cut electrical discharge machining.
本發明的研磨工具係利用超砥粒燒結體所構成的研磨部位,藉由以結合材料的溶融溫度以上的溫度燒結,使超砥粒的固著強度變大,有實質上不會脫落這樣的優點。特別是,以鑽石粒子作為超砥粒來使用時,在製程中,鑽石係在結合材料金屬溶融且鑽石的熱力學上安定的溫度壓力條件下被供給;鑽石微粒子,藉由結合材料金屬的部分溶解,而強力地與結合材金屬成為一體化,所以使其固著強度變成更大,實質上不會脫落。In the polishing tool of the present invention, the polishing portion formed of the super-sintered sintered body is sintered at a temperature equal to or higher than the melting temperature of the bonding material, so that the fixing strength of the super-fine particles is increased, and the polishing strength is not substantially removed. advantage. In particular, when diamond particles are used as super granules, in the process, the diamond is supplied under the temperature and pressure conditions in which the bonding material metal is melted and the thermodynamics of the diamond is stable; the diamond granules are partially dissolved by the bonding material metal However, it is strongly integrated with the metal of the bonding material, so that the fixing strength becomes larger and does not substantially fall off.
另外,一般而言,大面積地燒結時會產生不均的情況,難以製作整體均勻的大直徑研磨部位。但本發明以複數個分割研磨部來製造的超砥粒燒結體之研磨工具,從不會產生燒結不均之小直徑的超砥粒燒結體,裁切出大直徑扇形的分割研磨部,組合複數個扇形而作成大半徑的研磨部位,因此,可製成整體均質的高精度研磨工具。Further, in general, unevenness may occur during sintering in a large area, and it is difficult to produce a uniform large-diameter polishing portion. However, in the polishing tool of the super-sintered sintered body produced by the plurality of divided polishing portions, the super-fine sintered body of small diameter which does not cause unevenness in sintering is cut, and the divided-grinding portion of the large-diameter sector is cut and combined. A plurality of sectors are formed into a large radius of the grinding portion, so that a uniform and high-precision grinding tool can be produced.
再者,形成有研磨單位之研磨部位,其表面係以具有充分厚度的超砥粒燒結體所構成,藉此即使研磨單位因使用而磨滅,亦可藉由線切割放電加工等等,容易地使溝及研磨單位再生,作為本發明的研磨工具而再使用。Further, a polishing portion having a polishing unit is formed, and the surface thereof is formed of a super-sintered sintered body having a sufficient thickness, whereby even if the polishing unit is worn out by use, it can be easily processed by wire-cut electrical discharge or the like. The groove and the polishing unit are regenerated and reused as the polishing tool of the present invention.
另外,本發明的各研磨單位,係藉由線切割放電加工等等,從鑽石燒結體等的超砥粒燒結體,任意地被裁切出來;由於三角錐體及四角錐體等的底面平準及高度容易控制,與習用的研磨工具相較,為更具有高精度研磨面(水平面)的工具。特別是作為CMP襯墊修整器時,可高精度、高效率地加工半導體等的晶圓等的表面。Further, each of the polishing units of the present invention is arbitrarily cut out from a super-sintered sintered body such as a diamond sintered body by wire-cut electric discharge machining or the like; and the bottom surface of the triangular pyramid and the quadrangular pyramid is leveled. It is easy to control and is a tool with a high-precision grinding surface (horizontal surface) compared with conventional grinding tools. In particular, when used as a CMP pad conditioner, the surface of a wafer or the like can be processed with high precision and high efficiency.
成為本發明之研磨工具的材料之超砥粒燒結體,係將鑽石、c-BN(立方晶氮化硼)等的超砥粒粉末,以通常的方法經超高壓高溫製程處理而成。此狀態的燒結體係歪曲形變大的超砥粒燒結體,因此,預先藉由模具放電加工等使其大致平坦化。接著,藉由階段地形成本發明特定態樣之溝及突起側面,製成研磨單位,亦即,與研磨對象直接接觸的突起部分。再者,利用市售品作為超砥粒燒結體時,依規格的不同上述處理亦有所不同,如表面已平坦化,則可省略平坦化的預先處理步驟。The super-granule sintered body which is a material of the polishing tool of the present invention is obtained by subjecting a super-powdered powder such as diamond or c-BN (cubic boron nitride) to an ultrahigh-pressure high-temperature process by a usual method. Since the sintered system in this state has a large-sized sintered body of a super-small grain, the film is substantially flattened by die discharge machining or the like in advance. Next, the grinding unit, that is, the protruding portion that is in direct contact with the object to be polished, is formed by the step of forming the groove of the specific aspect and the side of the protrusion. Further, when a commercially available product is used as the super-sintered sintered body, the above treatment differs depending on the specifications, and if the surface is flattened, the pre-processing step of planarization can be omitted.
前述溝的形成方法,可以利用線切割放電加工、模具放電加工、其他種類的精密放電加工、或是雷射加工等,但以線切割放電加工為較佳;特別是欲使研磨單位的頂部尖銳時等等的情況,線切割放電加工特別佳。線切割放電加工法係沿著超砥粒燒結體表面,驅動放電加工用的金屬線,藉由金屬線與超砥粒燒結體材料之間的放電,除去材料,通常係依程式來執行。The method for forming the trench may be wire-cut electrical discharge machining, die electrical discharge machining, other types of precision electrical discharge machining, or laser processing, but wire-cut electrical discharge machining is preferred; in particular, the top of the polishing unit is sharpened. In the case of time and so on, wire cut discharge machining is particularly good. The wire-cut electric discharge machining method drives a metal wire for electric discharge machining along the surface of the super-sintered sintered body, and the material is removed by discharge between the metal wire and the super-sintered sintered body material, and is usually executed by a program.
本發明的研磨工具中,上述研磨單位係例如於圓形或具有同心的中心圓孔之圓環狀燒結體層上,交叉切入用來區分研磨面的複數溝群(以下稱之為區分溝群);或者,利用具有對應形狀的電極面之電極,以模具放電加工來製造。不論欲形成區分溝群於超砥粒層表面或電極面,以作成直線狀為簡便。In the polishing tool according to the present invention, the polishing unit is, for example, a circular or sintered annular sintered body layer having a concentric center circular hole, and is cut into a plurality of groove groups (hereinafter referred to as a division groove group) for distinguishing the polishing surfaces. Or, it is manufactured by die electrical discharge machining using an electrode having a correspondingly shaped electrode surface. It is convenient to form a line group on the surface of the super-grain layer or the electrode surface, in order to form a line.
上述區分溝群能夠配置成各種形式。例如,於超砥粒層的圓形表面上,以二組從一側外緣延伸至相對側外緣之預定間隔的平行直線群,互相垂直地形成(第1圖);或者,以三組上述直線群,60°交叉地形成(第2圖)。這些情況,分別製成四角形或三角形的研磨單位。The above-mentioned division groove group can be configured in various forms. For example, on a circular surface of the superfine grain layer, two sets of parallel straight line groups extending from one outer edge to a predetermined interval of the opposite side outer edges are formed perpendicularly to each other (Fig. 1); or, in three groups The above-mentioned straight line group is formed at 60° intersection (Fig. 2). In these cases, a square or triangular grinding unit is formed.
另外,研磨單位,也可以是在頂部呈現直線狀的稜線的形狀(第3圖所示之研磨單位係從研磨部位的一端至另一端呈現稜線,第4圖與第5圖所示之研磨單位的基部係長方形)等。研磨單位為長方形時,其溝及相鄰的研磨單位的傾斜面,係藉由線切割放電加工而形成,因此,基本上稜線係被形成與長邊平行。另外,四角錐狀的研磨單位,其縱橫的節距雖然亦可不相等,但如作為CMP修整器,以正方形為較佳。Further, the polishing unit may have a shape in which a straight ridge line is formed at the top (the polishing unit shown in Fig. 3 presents a ridge line from one end to the other end of the polishing portion, and the polishing unit shown in Figs. 4 and 5) The base is rectangular) and so on. When the polishing unit has a rectangular shape, the groove and the inclined surface of the adjacent polishing unit are formed by wire-cut electrical discharge machining. Therefore, substantially the ridge line is formed parallel to the long side. Further, although the pitches of the quadrangular pyramid-shaped polishing units may not be equal, the squares are preferable as the CMP conditioner.
上述例中,為有效地發揮各研磨單位之研磨部分的機能,必須使各研磨單位的頂部充分地小,且相鄰之研磨單位之間互相保持充分的間隔。關於研磨單位的頂部面積,作為例子,將第1圖的研磨工具1的部分擴大說明圖,模式地表示於第6圖,例如頂部面積Y的比例,相對於研磨單位2的基部的面積X(亦即超砥粒層剖面的面積減去研磨單位周邊的溝3的面積),以作成50%以下為較佳,以2%~25%為更佳。另外,研磨單位的頂部的頂角以30°~120°為佳,以60°~90°為較佳,以70°~80°左右為更佳。In the above examples, in order to effectively exhibit the function of the polishing portion of each polishing unit, it is necessary to sufficiently make the top of each polishing unit sufficiently small, and to maintain a sufficient interval between adjacent polishing units. Regarding the top area of the polishing unit, an example of the polishing tool 1 of Fig. 1 is enlarged as an example, and is schematically shown in Fig. 6, for example, the ratio of the top area Y, and the area X of the base of the polishing unit 2 ( That is, the area of the cross section of the superfine grain layer minus the area of the groove 3 around the polishing unit is preferably 50% or less, more preferably 2% to 25%. Further, the apex angle of the top of the polishing unit is preferably 30° to 120°, more preferably 60° to 90°, and still more preferably 70° to 80°.
溝的深度(從研磨單位的溝底算起的高度)係於0.1mm以上1mm以下,特別是0.15mm以上0.3mm以下為適當。溝太淺則被削切材料的削切屑無法有效率地排出,有研磨阻力會過度增加的傾向。相反地,溝太深則研磨單位的強度不足且必須有過度的超砥粒層厚度。The depth of the groove (the height from the groove bottom of the polishing unit) is preferably 0.1 mm or more and 1 mm or less, and particularly preferably 0.15 mm or more and 0.3 mm or less. When the groove is too shallow, the chipping of the material to be cut cannot be efficiently discharged, and the polishing resistance tends to excessively increase. Conversely, if the groove is too deep, the strength of the grinding unit is insufficient and there must be an excessive thickness of the super-layer.
研磨單位,其頂部形成直線狀、線段狀、三角、四角或是更多角的角柱形;各側面作成垂直於基板,使水平剖面的整體高度均勻為簡便,但是藉由使至少一側面,特別是關於工具的旋轉方向之前方的側面,相對於與軸平行的面,向後方傾斜時,更可提高削切性。The polishing unit has a rectangular column shape formed in a straight line, a line segment shape, a triangle shape, a quadrangular angle or a more angle; each side surface is formed perpendicular to the substrate, so that the overall height of the horizontal section is uniform, but by at least one side, It is about the front side of the rotation direction of the tool, and when it is inclined backward with respect to the surface parallel to the axis, the cutting property can be improved.
作為研磨單位形狀,使研磨單位的各側面傾斜而作成錐台狀,例如作成四角錐台狀或三角錐台狀為較佳。進而,將頂部作成尖點,例如四角錐狀或三角錐狀,則削切性更佳。As the polishing unit shape, each side surface of the polishing unit is inclined to form a truncated cone shape, and for example, a quadrangular frustum shape or a triangular frustum shape is preferable. Further, the tip is made into a sharp point, for example, a quadrangular pyramid shape or a triangular pyramid shape, and the cutting property is further improved.
另外,對於整列的角柱狀、角錐狀等等的研磨單位,於長方形、三角形之一或複數方向的側面,以專用工具研磨,使頂部的邊緣或頂點銳利化,亦即進行所謂的「開刃」,則可達成更良好的削切性。特別是研磨單位係多角形柱、多角形錐台,其頂部呈多角形(如典型的三角形或四角形)時,頂部的面之至少一邊進行開刃;而研磨單位係四角錐狀或三角錐狀時,即使不開刃亦可達成充分的削切性。In addition, for the grinding unit of the entire column, the pyramid shape, the pyramid shape, and the like, the surface of one of the rectangle, the triangle or the plural direction is polished with a special tool to sharpen the edge or the apex of the top, that is, the so-called "blade" ", can achieve better cutting performance. In particular, the grinding unit is a polygonal column and a polygonal frustum. When the top is polygonal (such as a typical triangle or a quadrangle), at least one side of the top surface is edged; and the polishing unit is a quadrangular pyramid or a triangular pyramid. When the blade is not edged, sufficient cutting performance can be achieved.
本發明的研磨部位,係被構成:其外徑為90mm以上,超砥粒層的厚度為0.1mm以上、1mm以下。作為燒結超砥粒層,係採用將鑽石燒結體(PCD)、c-BN燒結體(PcBN)的一側的面,以超硬合金亦即碳化鎢複合材料、或元素週期表第6A族金屬的碳化物為主成分之複合材料塊,打底補強後的構造者;並藉由接著劑等等,將複合材料側固著於工具基板,相反側則形成區分溝,作為研磨部位來使用。The polishing site of the present invention is configured such that the outer diameter thereof is 90 mm or more, and the thickness of the superfine granule layer is 0.1 mm or more and 1 mm or less. As the sintered super-ruthenium layer, a surface of one side of a diamond sintered body (PCD) or a c-BN sintered body (PcBN) is used, and a superhard alloy, that is, a tungsten carbide composite material, or a metal of a Group 6A of the periodic table is used. The composite block of the carbide as the main component is the structure of the base after reinforcement; and the composite material side is fixed to the tool substrate by an adhesive or the like, and the opposite side forms a division groove, and is used as a polishing portion.
如此的燒結體,市面上販賣的是典型的以單軸加壓型的高溫超高壓均壓機調製後之圓板狀燒結體。無法取得預定直徑的燒結體時,特別是未嚴格要求平坦度時,亦可分別製作本發明的研磨工具的各部分,再組合成一研磨工具來使用。Such a sintered body is commercially available as a disk-shaped sintered body which is typically pulverized by a uniaxial pressing type high-temperature ultra-high pressure equalizing machine. When the sintered body having a predetermined diameter cannot be obtained, in particular, when the flatness is not strictly required, each part of the polishing tool of the present invention can be separately produced and combined into a single polishing tool.
以複數個分割研磨部來構成研磨部位時,為盡可能地均等排列配置研磨單位於研磨部整體,將溝形成於分割研磨部的境界部是適當的。此時,在二或四分割的分割研磨部,若形成互相垂直交叉的二組平行溝群,將研磨單位作成四角錐狀或四角錐台狀,則可以得到除了外緣部以外之沒有紊亂地排列的研磨單位。另一方面,在三或六分割的分割研磨部的情況,先形成互相地以120°交叉的三組等間隔平行直線群,進而形成三個角錐體側面而作成三角錐狀或三角錐台狀的研磨單位列,也是同樣的。When the polishing portion is formed by a plurality of divided polishing portions, it is appropriate to arrange the polishing unit as a whole in the polishing portion as much as possible, and to form the groove in the boundary portion of the divided polishing portion. In this case, in the two or four divided divided polishing portions, if two sets of parallel groove groups intersecting each other perpendicularly are formed, and the polishing unit is formed into a quadrangular pyramid shape or a quadrangular pyramid shape, it is possible to obtain a disorder other than the outer edge portion. Arranged grinding units. On the other hand, in the case of the three or six divided divided polishing portions, three sets of equidistant parallel straight line groups that intersect each other at 120° are formed, and three pyramidal side faces are formed to form a triangular pyramid or a triangular frustum. The grinding unit column is the same.
亦即,四角錐體時,沿著研磨部表面進給放電加工用的金屬線,藉由放電首先於研磨部位表面形成直線狀的溝。接著,往研磨部位的Z軸方向驅動金屬線,藉由沿著四角錐體的側面輪廓切斷研磨部位,製成與溝相鄰之錐(台)狀體的側面。反覆進行此操作,形成平行溝群。In other words, in the case of a quadrangular pyramid, a metal wire for electric discharge machining is fed along the surface of the polishing portion, and a linear groove is formed on the surface of the polishing portion by discharge first. Next, the metal wire is driven in the Z-axis direction of the polishing portion, and the polishing portion is cut along the side profile of the quadrangular pyramid to form the side surface of the cone-shaped body adjacent to the groove. This operation is repeated to form a parallel groove group.
本發明中,錐狀體的頂部係由一或複數個鑽石粒子所構成。但是即使是使用微细粒子,由於鑽石的尺寸亦有限,所以無法得到幾何學意義下之錐體。因此,將頂部的直徑與底邊相較,如充分小時即稱之為錐狀體。同理地,與錐狀體相較,頂部的各方向的尺寸較大即稱之為錐台。In the present invention, the top of the cone is composed of one or a plurality of diamond particles. However, even with the use of fine particles, since the size of the diamond is limited, the cone in the geometric sense cannot be obtained. Therefore, the diameter of the top is compared to the bottom edge, and if it is sufficiently small, it is called a cone. Similarly, the larger size of the top in each direction is called a frustum than the cone.
四角錐(台)狀研磨單位的製作係如第7圖與第8圖所示,在研磨部位10的表面,以預定溝間隔(節距)形成第一方向11的平行溝群(其中之一者為代表,標示符號12,以下亦相同)及錐(台)狀體兩側面(其中之一者為代表,標示符號13、14,以下亦相同)後,將固著研磨部位10的基板整體繞著圓環中心軸周圍旋轉90°,然後藉由相同地以預定間隔形成第二方向15的平行溝群16以及與各溝相鄰的錐體傾斜面17、18,可以得到垂直交叉之二組平行溝群、以及沿著溝排列的四角錐(台)狀研磨單位19。第7圖之A-A的部分的剖面係如第8圖所示。The production of the quadrangular pyramid-shaped polishing unit is as shown in FIGS. 7 and 8 , and a parallel groove group in which the first direction 11 is formed at a predetermined groove interval (pitch) on the surface of the polishing portion 10 (one of them) After being represented by the symbol 12, the same applies hereinafter, and the two sides of the cone (stationary body) (one of which is representative, the reference numerals 13 and 14, and the same applies hereinafter), the entire substrate of the polishing portion 10 is fixed. By rotating 90° around the central axis of the ring, and then forming the parallel groove group 16 of the second direction 15 at the predetermined interval and the inclined surface 17 and 18 of the cone adjacent to each groove, the vertical cross can be obtained. A group of parallel groove groups and a quadrangular pyramid (stage)-like polishing unit 19 arranged along the groove. The section of the portion of A-A of Fig. 7 is as shown in Fig. 8.
三角錐體時,係如第9圖與第10圖所示,上述第一方向21的平行溝群22以及與溝相鄰的角錐傾斜面23、24形成之後,將研磨部位25繞著研磨部位25中心軸的周圍旋轉120°,相同地,以預定間隔藉由線切割放電加工形成第二方向26的平行溝群27以及相鄰之傾斜側面28、29。之後,再旋轉研磨部位120°,進行相同的操作,藉此,可以得到以120°交叉之第三方向30的平行溝群31、相鄰之傾斜側面32、33以及沿著溝排列的三角錐狀研磨單元34。In the case of the triangular pyramid, as shown in Figs. 9 and 10, after the parallel groove group 22 of the first direction 21 and the inclined surface inclined faces 23 and 24 adjacent to the groove are formed, the polishing portion 25 is wound around the polishing portion. The circumference of the central shaft is rotated by 120°, and the parallel groove group 27 in the second direction 26 and the adjacent inclined side faces 28, 29 are formed by wire-cut electric discharge machining at predetermined intervals. Thereafter, the polishing portion is rotated by 120°, and the same operation is performed, whereby the parallel groove group 31 in the third direction 30 intersecting by 120°, the adjacent inclined side faces 32, 33, and the triangular pyramids arranged along the groove can be obtained. Shape grinding unit 34.
上述研磨單位中,錐狀體或錐台體頂部至溝底面的突出高度,不論三角形、四角形皆以200 μ m以下30 μ m以上為適當。突出太淺則研磨部本體與襯墊等的工作件直接接觸,有無法有效地進行修整的傾向。相反地,突出過大則研磨單位的強度不足,必須有過度的超砥粒層的厚度。另一方面,相鄰溝之間的間隔(節距)係1500 μ m以下,間隔距離的下限係取決於線切割放電加工的金屬線直徑,例如能夠作成200 μ m。In the above polishing unit, the protrusion height from the top of the tapered body or the frustum body to the bottom surface of the groove is preferably 200 μm or less and 30 μm or more in both the triangular shape and the square shape. When the protrusion is too shallow, the body of the polishing portion is in direct contact with the workpiece such as the spacer, and there is a tendency that the trimming cannot be performed efficiently. Conversely, if the protrusion is too large, the strength of the polishing unit is insufficient, and it is necessary to have an excessive thickness of the super-layer. On the other hand, the interval (pitch) between adjacent grooves is 1500 μm or less, and the lower limit of the separation distance depends on the diameter of the wire for wire-cut electrical discharge machining, for example, 200 μm.
上述研磨單位的研磨性能係取決於錐(台)狀體的頂部所包含的超砥粒的粒度。超砥粒係鑽石粒子時,亦即構成研磨部位之燒結體係燒結鑽石(PCD)層時,作為鑽石粒子的粒度(公稱粒度),可利用40 μ m~60 μ m以下、8 μ m~16 μ m、0~2 μ m等的各粒度的PCD層,但以公稱粒度8 μ m~16 μ m以下為較佳,特別是0~2 μ m更佳。The polishing performance of the above-mentioned polishing unit depends on the particle size of the super-size particles contained in the top of the cone-shaped body. When the superfine granules of diamond particles are used, that is, the sintered system sintered diamond (PCD) layer constituting the polishing site, the particle size (nominal particle size) of the diamond particles can be 40 μm to 60 μm or less and 8 μm to 16 The PCD layer of each particle size such as μ m and 0 to 2 μ m is preferably 8 μm to 16 μm or less, more preferably 0 to 2 μm.
用於本發明研磨部位的鑽石燒結體,係將鑽石粒子與作為打底材料的超硬合金以及於必要時添加的鈷等的結合金屬,同時供給至鑽石的熱力學上安定的超高壓高溫條件下,而可以獲得。從燒結體製作本發明的研磨部位的加工係藉由精密放電加工,典型地,係藉由線切割放電加工裁切以及藉由表面的加工來製成研磨單位。線切割放電加工時,一般地,使放電加工用金屬線接觸超砥粒燒結體進行放電,水平移動金屬線使其成為預定的溝寬,再移動金屬線以形成研磨單位的側面。The diamond sintered body used in the polishing portion of the present invention is a composite metal of a diamond particle and a superhard alloy as a primer and, if necessary, cobalt, and is supplied to a thermodynamically stable ultrahigh pressure and high temperature condition of the diamond. And can be obtained. The processing of the polishing portion of the present invention from the sintered body is performed by precision electric discharge machining, typically by wire-cut discharge machining and by surface processing. In the wire-cut electric discharge machining, generally, the electric wire for electric discharge machining is brought into contact with the super-sintered sintered body to discharge, the metal wire is horizontally moved to have a predetermined groove width, and the metal wire is moved to form a side surface of the polishing unit.
再者,如第11圖所示,放電加工用金屬線41接觸超砥粒燒結體42後,並非水平移動,而是沿著圖中的箭號方向移動,以相鄰的研磨單位43、44之相對的兩傾斜面成為與金屬線41的接面之方式而形成溝;亦可以此平面作為基準面,向兩側形成側面。依此方法形成溝時,溝的底部形狀之剖面係略圓弧的曲面,與溝的底部為平面或折角時相較,減輕了研磨時的應力集中,提高研磨單位的強度(耐久性)。Further, as shown in Fig. 11, after the electric discharge machining wire 41 contacts the super-barium sintered body 42, it does not move horizontally, but moves in the direction of the arrow in the figure, and the adjacent polishing units 43 and 44 The two inclined surfaces are formed to form a groove so as to be in contact with the metal wire 41. The plane may be used as a reference surface to form side faces on both sides. When the groove is formed by this method, the cross-sectional shape of the groove is a curved surface having a slightly circular arc, and the stress concentration during polishing is reduced and the strength (durability) of the polishing unit is improved as compared with the case where the bottom of the groove is flat or folded.
如第12圖~第17圖的例示,本發明的工具可製成多種形狀。如第12圖與第13圖所示,關於較小型的工具,研磨部位例如也能製成單一連續圓形與圓環狀,但如第14圖~第17圖所示,在本發明中,研磨部位由於能毫無問題地由複數個分割研磨部構成,特別是此時也可容易製成外形為95mm以上的大直徑圓環狀的研磨部位。As exemplified in Figures 12 to 17, the tool of the present invention can be made in a variety of shapes. As shown in FIGS. 12 and 13, as for the smaller type of tool, the polishing site can be formed, for example, as a single continuous circle and a ring shape, but as shown in FIGS. 14 to 17, in the present invention, The polishing portion can be formed of a plurality of divided polishing portions without any problem. In particular, in this case, a large-diameter annular polishing portion having an outer shape of 95 mm or more can be easily formed.
圓環狀構成中,半徑方向的寬度以作成15mm以上較佳。特別是設計上不需中心孔時,研磨部位可不呈圓環狀而能作成圓板狀(無中心孔)。另外,如第12圖與第13圖所示,為防止因工作件與尖緣的接觸所造成的損傷,於圓形研磨部的外緣部分,以及圓環狀研磨部的外緣與內緣部,分別設置1mm(半徑方向寬度)以上距離的傾斜部58、68及69為較佳。In the annular configuration, the width in the radial direction is preferably 15 mm or more. In particular, when the center hole is not required in the design, the polishing portion may not have an annular shape and may be formed into a disk shape (without a center hole). Further, as shown in FIGS. 12 and 13, in order to prevent damage due to contact between the workpiece and the sharp edge, the outer edge portion of the circular polishing portion, and the outer and inner edges of the annular polishing portion It is preferable that the inclined portions 58, 68 and 69 each having a distance of 1 mm (radial width) or more are provided.
以複數個分割研磨部構成研磨部位時,如第14圖~第17圖的例示,藉由以相鄰的二分割研磨部位的境界部(接合部)會成為溝的方式,來設定研磨單位的配置,能夠避免因研磨部位的分割構成所造成的研磨單位配置的不整、以及伴隨著此配置的不整而對工作件(研磨襯墊)造成不良影響,或將其抑制於最小限度。此時,研磨部位的分割數與可利用的研磨單位的形狀相關,二分割(中心角180°)或四分割(中心角90°)的研磨部位係四角錐狀(第14圖與第15圖),三分割(中心角120°)的研磨部位係三角錐狀(第16圖與第17圖)。When the plurality of divided polishing portions constitute the polishing portion, as illustrated in FIGS. 14 to 17 , the polishing unit is set such that the boundary portion (joining portion) of the adjacent two-division polishing portion becomes a groove. According to the arrangement, it is possible to avoid the unevenness of the polishing unit arrangement due to the division of the polishing portion, and the adverse effect on the workpiece (grinding pad) due to the irregularity of the arrangement, or to minimize it. At this time, the number of divisions of the polishing portion is related to the shape of the available polishing unit, and the polishing portions of the two divisions (center angle of 180°) or four divisions (center angle of 90°) are quadrangular pyramids (Fig. 14 and Fig. 15) The three-divided (central angle 120°) polishing portion has a triangular pyramid shape (Fig. 16 and Fig. 17).
製作大直徑研磨工具時,從可均勻燒結之小直徑的超砥粒燒結體(以鑽石燒結體為較佳),以預定的尺寸及形狀裁切加工形成分割研磨部。然後利用接著劑,藉由將複數個分割研磨部接合於以各種鋼等的材料所構成的剛性基板的平坦圓板面或圓環狀表面上,能作成大直徑圓板狀或圓環狀(圓板的中央具有同心圓孔的形狀)的研磨部位。When a large-diameter grinding tool is produced, a small-diameter super-sintered sintered body (preferably a diamond sintered body) which can be uniformly sintered is cut into a predetermined size and shape to form a divided polished portion. Then, by using a bonding agent, a plurality of divided polishing portions are bonded to a flat disk surface or an annular surface of a rigid substrate made of a material such as various steels, thereby forming a large-diameter disk shape or an annular shape ( A polishing portion having a shape of a concentric circular hole in the center of the circular plate.
關於分割研磨部,係採用分別將六、四、三或二個中心角為60°、90°、120°、180°的扇形,在半徑上互相鄰接(側面接觸配置)地設置,但是關於60°的扇形,亦可用一個120°的扇形來代替二個相同形狀的60°的扇形。此時,120°的扇形,關於二個60°扇形的中心,係配置成點對稱。Regarding the split grinding portion, a fan shape of six, four, three or two center angles of 60°, 90°, 120°, and 180°, respectively, is provided adjacent to each other in the radius (side contact arrangement), but regarding 60 The fan shape of ° can also be replaced by two fan blades of the same shape of a 60° fan shape. At this time, the fan shape of 120° is arranged in point symmetry with respect to the center of the two 60° sectors.
各研磨部位51、61、71、81、91、101,以超硬合金側與圓形基板52、62、72、82、92、102的平坦圓形面接合,使整體成為圓形或環狀的研磨部位。Each of the polishing portions 51, 61, 71, 81, 91, and 101 is joined to the flat circular surface of the circular substrates 52, 62, 72, 82, 92, 102 on the cemented carbide side to make the whole circular or ring-shaped. Grinding parts.
被接合於基板上的超砥粒燒結體,接著進行線切割放電加工,藉由線切割放電加工用金屬線與超砥粒燒結體之間的放電加工,於超砥粒燒結體表面以預定間隔形成平行的一組直線溝群53、63、73、83、93、103。此時,金屬線係相對於基板面或基板底面平行地驅動,從已經預先平坦化的表面進入燒結體層(如典型的燒結鑽石(PCD)層)內,而下刻至燒結體層內;或是在燒結體層較薄時,更向下刻至超硬合金層。The super-barium sintered body bonded to the substrate is subjected to wire-cut electric discharge machining, and is subjected to electric discharge machining between the wire for electric discharge machining and the super-sintered sintered body at a predetermined interval on the surface of the super-sintered sintered body. A group of straight groove groups 53, 63, 73, 83, 93, 103 are formed in parallel. At this time, the metal wire is driven in parallel with respect to the substrate surface or the bottom surface of the substrate, and enters the sintered body layer (such as a typical sintered diamond (PCD) layer) from the surface which has been previously planarized, and is etched into the sintered body layer; When the sintered body layer is thinner, it is further etched down to the superhard alloy layer.
此時,驅動金屬線切入超砥粒燒結體的厚度方向(Z軸方向)來製作溝。一溝群中最初的溝的形成,於360°的連續圓形或環狀面,不論是三角錐狀體或四角錐狀體的任一情況,能夠從任意位置開始,但是研磨部位係由複數個分割研磨部組成時,必須在分割研磨部的接合部54、64、74、84、94、104設置溝,接著,於其兩側以預定節距平行地形成於全面。At this time, the driving wire is cut into the thickness direction (Z-axis direction) of the super-sintered sintered body to form a groove. The formation of the first groove in a groove group, in a continuous circular or annular surface of 360°, can be started from any position in either the triangular pyramid or the quadrangular pyramid, but the polishing portion is plural In the case of dividing the polishing portion, it is necessary to provide grooves in the joint portions 54, 64, 74, 84, 94, and 104 of the divided polishing portion, and then to form the grooves in parallel at a predetermined pitch on both sides thereof.
於超砥粒燒結體的表面形成一方向的平行溝群後,接著,使超砥粒燒結體與基板一同繞著基板中心軸的周圍僅旋轉溝群交叉角度α,相同地,以上述預定間隔形成第二直線狀平行溝群55、65、75、85、95、105以及與各溝相鄰的傾斜側面。此處,180°與90°的扇形時,α的角度係90°,研磨單位呈四角錐狀或錐台狀。另一方面,120°與60°的扇形時,α的角度係僅旋轉60°(或120°),相同地,以上述預定間隔形成第二直線狀平行溝群以及與各溝相鄰的傾斜側面,之後,再旋轉60°(或120°)(相對於最初的溝群為240°),形成第三直線狀平行溝群56、66、76、86、96、106以及與各溝相鄰的傾斜側面。關於連續圓形與環狀材料,α的角度可採用90°與60°的任一種。After forming a parallel groove group in one direction on the surface of the super-sintered sintered body, the super-sintered sintered body and the substrate are rotated around the central axis of the substrate to rotate only the groove group crossing angle α, and similarly, at the predetermined interval The second linear parallel groove groups 55, 65, 75, 85, 95, 105 and the inclined side faces adjacent to the respective grooves are formed. Here, in the case of a fan shape of 180° and 90°, the angle of α is 90°, and the polishing unit has a quadrangular pyramid shape or a truncated cone shape. On the other hand, in the case of a fan shape of 120° and 60°, the angle of α is only rotated by 60° (or 120°), and similarly, the second linear parallel groove group and the inclination adjacent to each groove are formed at the predetermined intervals described above. Lateral, then rotated 60° (or 120°) (240° relative to the initial groove group) to form a third linear parallel groove group 56, 66, 76, 86, 96, 106 and adjacent to each groove Slanted side. Regarding the continuous circular and annular material, the angle of α may be any of 90° and 60°.
上述線切割放電的操作中,在從基板底面算起往厚度方向間隔相等的高度(水平面),藉由驅動放電用金屬線,則能夠將上述溝群及三角、四角錐狀或錐台狀的頂部,形成在平行於基板底面的水平面上。In the operation of the wire-cut discharge, the groove group and the triangle, the quadrangular pyramid shape, or the truncated cone shape can be formed by driving the discharge metal wire at a height (horizontal plane) which is equal to each other in the thickness direction from the bottom surface of the substrate. The top is formed on a horizontal plane parallel to the bottom surface of the substrate.
本發明中,研磨單位的三角錐或四角錐無須整體皆由超砥粒燒結體構成,如至少包含錐(台)狀體頂點的60 μ m左右的部分(高度)為超砥粒燒結體,即使下方部分為超硬合金亦可。接著,說明本發明的具體實施例。In the present invention, the triangular or quadrangular pyramid of the polishing unit does not need to be entirely composed of a super-sintered sintered body, and a portion (height) of about 60 μm including at least the apex of the cone-like body is a super-sintered sintered body. Even if the lower part is a superhard alloy. Next, a specific embodiment of the present invention will be described.
製作第1圖略示構造之研磨工具1。厚度0.6mm的燒結鑽石層,藉由與超硬合金同時燒結成一體,製成直徑90mm的PCD塊作為工具材料。The polishing tool 1 of the structure shown in Fig. 1 was produced. A sintered diamond layer having a thickness of 0.6 mm was sintered at the same time as the super hard alloy to form a PCD block having a diameter of 90 mm as a tool material.
上述PCD塊,藉由放電加工(EDM)使燒結鑽石層的表面平坦化,再藉由線切割放電加工,刻出寬度560 μ m的平行直線狀的溝3,形成頂部一邊為260 μ m的正方形之研磨單位2。此時,研磨單位2的頂部(未圖示)的面積,除了週邊部(溝3的部分)之外,約相當於超砥粒燒結層剖面面積的10%。In the PCD block, the surface of the sintered diamond layer is flattened by electrical discharge machining (EDM), and a parallel linear groove 3 having a width of 560 μm is formed by wire-cut electrical discharge machining to form a top side of 260 μm. Square grinding unit 2. At this time, the area of the top (not shown) of the polishing unit 2 corresponds to about 10% of the cross-sectional area of the super-sintered sintered layer except for the peripheral portion (the portion of the groove 3).
頂部的邊緣進行開刃,用以作為CMP修整器。The top edge is edged for use as a CMP conditioner.
製作第2圖略示構造之研磨工具4。厚度0.6mm的燒結c-BM層,藉由與超硬合金同時燒結成一體,製成PcBN塊,然後以線切割放電加工從PcBN塊裁切四個外緣半徑60mm、內緣半徑24mm之90°的扇形作為工具材料。The polishing tool 4 of the structure shown in Fig. 2 is produced. A sintered c-BM layer having a thickness of 0.6 mm is sintered into a PcBN block by simultaneous sintering with a super hard alloy, and then cut by a wire cutting electric discharge machining from the PcBN block to have a radius of 60 mm of the outer edge and a radius of 24 mm of the inner edge. The fan shape of ° is used as a tool material.
將上述扇形貼合於SUS不鏽鋼製基板上組合成一完整的圓形。研磨燒結鑽石層的表面使其平坦化,再藉由線切割放電加工,刻出寬度560 μ m的平行直線狀的溝6的群,形成具有頂部之研磨單位5,該頂部為邊長350 μ m的正三角形。此時,研磨單位頂部的面積係超砥粒燒結層整體的7%。The above-mentioned sectors were bonded to a SUS stainless steel substrate to form a complete circular shape. The surface of the sintered diamond layer is ground to be flattened, and then a wire-cut electric discharge machining process is performed to engrave a group of parallel linear grooves 6 having a width of 560 μm to form a polishing unit 5 having a top portion having a side length of 350 μ. The regular triangle of m. At this time, the area of the top of the polishing unit was 7% of the entire super-sintered layer.
與實施例1相同地,將所得之工具進行開刃,用以研磨矽晶圓的表面。In the same manner as in Example 1, the obtained tool was edged to polish the surface of the tantalum wafer.
製作第12圖略示構造之研磨工具。以公稱粒度40 μ m~60 μ m的鑽石粒子所成之厚度0.5mm的PCD層與超硬合金(WC-8% Co)同時燒結成一體,製成直徑100mm的鑽石燒結體作為研磨部位,並以環氧樹脂接著劑固著於直徑108mm的SUS316不鏽鋼製圓形基板上。An abrasive tool of the structure shown in Fig. 12 is produced. A PCD layer having a thickness of 0.5 mm and a superhard alloy (WC-8% Co) formed by diamond particles having a nominal particle size of 40 μm to 60 μm is simultaneously sintered to form a diamond sintered body having a diameter of 100 mm as a polishing portion. It was fixed on a circular substrate made of SUS316 stainless steel having a diameter of 108 mm with an epoxy resin adhesive.
接著,藉由模具放電加工使PCD層的表面平坦化,再藉由線切割放電加工切刻PCD層,形成通過材料中心之寬度200 μ m的直線溝。再向側方驅動金屬線、或向遠離基板的方向(Z軸方向)移動,形成預定寬度的溝以及裁切出錐狀體的側面。Next, the surface of the PCD layer was planarized by die electrical discharge machining, and the PCD layer was cut by wire-cut discharge machining to form a straight groove having a width of 200 μm passing through the center of the material. The metal wire is driven to the side or moved in a direction away from the substrate (Z-axis direction) to form a groove having a predetermined width and a side surface on which the tapered body is cut.
藉由反覆進行此操作,於材料面整體,形成溝間隔800 μ m的平行溝群以及頂角90°的屋頂狀突起。接著,將整體沿著中心軸周圍旋轉90°後,藉由在相同條件下進行線切割放電加工,形成與上述溝群垂直的第二直線溝群,同時裁切出垂直方向的錐狀體側面,形成高度200 μ m的第7圖與第8圖所示之四角錐狀體群。By repeating this operation, a parallel groove group having a groove interval of 800 μm and a roof-like protrusion having a vertex angle of 90° are formed on the entire material surface. Next, after rotating the entire circumference along the central axis by 90°, the wire-cut electrical discharge machining is performed under the same conditions to form a second straight groove group perpendicular to the groove group, and the vertical tapered body side is cut at the same time. , a quadrangular pyramid group shown in Fig. 7 and Fig. 8 having a height of 200 μm is formed.
以公稱粒度0~2 μ m的鑽石粒子所成之厚度0.5mm的PCD層與超硬合金一體化之外徑100mm、內徑70mm的鑽石燒結體,作為研磨部位,反覆進行實施例3的操作,製作具有四角錐狀研磨單位的研磨工具。A diamond sintered body having an outer diameter of 100 mm and an inner diameter of 70 mm formed by a PCD layer having a thickness of 0.5 mm and a diamond particle having a nominal particle size of 0 to 2 μm is integrated as a polishing portion, and the operation of the third embodiment is repeated. A grinding tool having a quadrangular pyramid-shaped grinding unit is produced.
首先,將平坦化之PCD層的表面,藉由線切割放電加工,形成通過材料中心寬度140 μ m的直線溝。再藉由金屬線的操作,擴大溝至預定的寬度以及裁切出錐狀體的側面。反覆此操作的結果,於材料面整體,形成溝間隔200 μ m的平行溝群以及頂角60°的屋頂狀突起。First, the surface of the planarized PCD layer was processed by wire-cut electrical discharge to form a straight groove passing through a material center width of 140 μm. Further, by the operation of the metal wire, the groove is expanded to a predetermined width and the side surface of the tapered body is cut. As a result of this operation, a parallel groove group having a groove interval of 200 μm and a roof-like protrusion having a vertex angle of 60° were formed on the entire material surface.
接著,將整體沿著中心軸的周圍旋轉90°後,藉由在相同條件下進行線切割放電加工,形成第二直線溝群,同時裁切出第二錐狀體的側面,形成高度200 μ m的四角錐狀體群。Then, after rotating the whole circumference along the central axis by 90°, the second straight groove group is formed by performing wire-cut electrical discharge machining under the same conditions, and the side surface of the second tapered body is cut to form a height of 200 μ. A quadrangular pyramid of m.
利用以下所示之各種分割研磨部,製作各種構成的工具。鑽石燒結體中的鑽石,其公稱粒度皆為20 μ m~30 μ m。線切割的操作進行,除了研磨單位為三角錐狀時將工具材料旋轉60°二次,以及研磨單位為四角錐狀時旋轉90°一次之相異點外,本質上並無差異。操作條件及結果係如下表所示。Various types of tools are produced by using various divided polishing portions shown below. Diamonds in diamond sintered bodies have a nominal particle size of 20 μm to 30 μm. The wire cutting operation is carried out in addition to the fact that the grinding unit is rotated by 60° twice when the grinding unit is triangular, and the difference is substantially the same when the grinding unit is a quadrangular pyramid. The operating conditions and results are shown in the table below.
以所得之任一工具作為CMP襯墊修整器來使用,皆獲得良好的性能。Good performance is obtained by using any of the obtained tools as a CMP pad conditioner.
本發明的研磨工具可作為各種研磨工具來使用,特別適於作為圓板形旋轉研磨工具來使用。用途上特別適於作為CMP襯墊修整器來使用,亦適用於半導體晶圓等的表面的直接研磨。此外,亦適用於各種被削切材的高精度研磨加工。The abrasive tool of the present invention can be used as a variety of abrasive tools, and is particularly suitable for use as a disk-shaped rotary abrasive tool. It is particularly suitable for use as a CMP pad conditioner, and is also suitable for direct polishing of the surface of a semiconductor wafer or the like. In addition, it is also suitable for high-precision grinding of various cut materials.
本發明並非被限定於上述實施型態者,上述實施型態僅為例示,凡是具有和本發明申請專利範圍所記載之技術思想實質相同之構成,可達到同樣之作用效果者,皆包含在本發明之技術思想中。The present invention is not limited to the above-described embodiments, and the above-described embodiments are merely illustrative, and those having the same constitutional principles as those described in the scope of the present invention can achieve the same effects and are included in the present invention. In the technical idea of the invention.
1...研磨工具1. . . Grinding tool
2...研磨單位2. . . Grinding unit
3...溝3. . . ditch
4...研磨工具4. . . Grinding tool
5...研磨單位5. . . Grinding unit
6...溝6. . . ditch
7...研磨工具7. . . Grinding tool
8...研磨單位8. . . Grinding unit
9...溝9. . . ditch
10...研磨部位10. . . Grinding site
11...第一方向11. . . First direction
12...第一方向平行溝群12. . . First direction parallel groove group
13...錐狀體側面13. . . Cone side
14...錐狀體側面14. . . Cone side
15...第二方向15. . . Second direction
16...第二方向平行溝群16. . . Second direction parallel groove group
17...錐體傾斜面17. . . Cone slope
18...錐體傾斜面18. . . Cone slope
19...四角錐狀研磨單位19. . . Quadrangular pyramid grinding unit
21...第一方向twenty one. . . First direction
22...第一方向平行溝群twenty two. . . First direction parallel groove group
23...三角錐傾斜面twenty three. . . Triangular cone
24...三角錐傾斜面twenty four. . . Triangular cone
25...研磨部位25. . . Grinding site
26...第二方向26. . . Second direction
27...第二方向平行溝群27. . . Second direction parallel groove group
28...傾斜側面28. . . Inclined side
29...傾斜側面29. . . Inclined side
30...第三方向30. . . Third direction
31...第三方向平行溝群31. . . Third direction parallel groove group
32...傾斜側面32. . . Inclined side
33...傾斜側面33. . . Inclined side
34...三角錐狀研磨單位34. . . Triangular pyramid grinding unit
41...放電加工用金屬線41. . . Electric wire for electric discharge machining
42...研磨部位42. . . Grinding site
43...研磨單位43. . . Grinding unit
44...研磨單位44. . . Grinding unit
51...研磨部51. . . Grinding department
52...圓形基板52. . . Circular substrate
53...直線溝群53. . . Straight groove group
55...第二溝群55. . . Second groove group
58...外緣傾斜部58. . . Rim of the outer edge
61...研磨部位61. . . Grinding site
62...圓形基板62. . . Circular substrate
63...直線溝群63. . . Straight groove group
65...第二溝群65. . . Second groove group
66...第三溝群66. . . Third groove group
68...外緣傾斜部68. . . Rim of the outer edge
69...內緣傾斜部69. . . Inner edge slope
71...研磨部位71. . . Grinding site
72...圓形基板72. . . Circular substrate
73...直線溝群73. . . Straight groove group
74...接合部74. . . Joint
75...第二溝群75. . . Second groove group
81...研磨部位81. . . Grinding site
82...圓形基板82. . . Circular substrate
83...直線溝群83. . . Straight groove group
84...接合部84. . . Joint
85...第二溝群85. . . Second groove group
91...研磨部位91. . . Grinding site
92...圓形基板92. . . Circular substrate
93...直線溝群93. . . Straight groove group
94...接合部94. . . Joint
95...第二溝群95. . . Second groove group
96...第三溝群96. . . Third groove group
101...研磨部位101. . . Grinding site
102...圓形基板102. . . Circular substrate
103...直線溝群103. . . Straight groove group
104...接合部104. . . Joint
105...第二溝群105. . . Second groove group
106...第三溝群106. . . Third groove group
第1圖係表示本發明之研磨工具之一實施型態(實施例1)的說明圖(俯視圖);第2圖係表示本發明之研磨工具之一實施型態(實施例2)的說明圖(俯視圖);第3圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖);第4圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖);第5圖係第4圖的部分擴大圖;第6圖係第1圖的部分擴大圖;第7圖係表示關於本發明之研磨工具的研磨單位之一構成例的說明圖(俯視圖);第8圖係表示第7圖的A-A之間的剖面之說明圖;第9圖係表示關於本發明之研磨工具的研磨單位之另一構成例的說明圖(俯視圖);第10圖係表示第9圖的B-B之間的剖面之說明圖;第11圖係表示本發明之研磨工具製造方法中所採用的線切割放電加工的態樣說明圖;第12圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖);第13圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖);第14圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖);第15圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖);第16圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖);以及第17圖係表示本發明之研磨工具之一實施型態的說明圖(俯視圖)。1 is an explanatory view (top view) showing an embodiment of an abrasive tool according to the present invention (Example 1); and FIG. 2 is an explanatory view showing an embodiment (Example 2) of an abrasive tool of the present invention. (top view); Fig. 3 is an explanatory view (top view) showing an embodiment of the grinding tool of the present invention; and Fig. 4 is an explanatory view (top view) showing an embodiment of the grinding tool of the present invention; Fig. 6 is a partial enlarged view of Fig. 4; Fig. 7 is a partially enlarged view of Fig. 1; Fig. 7 is an explanatory view (top view) showing one example of a polishing unit of the polishing tool of the present invention; FIG. 9 is an explanatory view showing a cross section between A and A of FIG. 7, and FIG. 9 is an explanatory view (top view) showing another configuration example of the polishing unit of the polishing tool of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a view showing an aspect of wire-cut electrical discharge machining used in the method for manufacturing an abrasive tool of the present invention; and FIG. 12 is a view showing a grinding tool of the present invention. An explanatory view of an embodiment (top view); Fig. 13 shows a grinder of the present invention 1 is an explanatory view (top view) of an embodiment of the present invention; FIG. 14 is an explanatory view (top view) showing an embodiment of the abrasive tool of the present invention; and FIG. 15 is a view showing an embodiment of the abrasive tool of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 16 is an explanatory view (top view) showing an embodiment of an abrasive tool according to the present invention; and FIG. 17 is an explanatory view (top view) showing an embodiment of an abrasive tool of the present invention. .
1...研磨工具1. . . Grinding tool
2...研磨單位2. . . Grinding unit
3...溝3. . . ditch
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2006
- 2006-08-25 WO PCT/JP2006/316737 patent/WO2007023949A1/en active Application Filing
- 2006-08-25 RU RU2008110905/02A patent/RU2430827C2/en not_active IP Right Cessation
- 2006-08-25 CA CA002620407A patent/CA2620407A1/en not_active Abandoned
- 2006-08-25 AU AU2006282293A patent/AU2006282293B2/en not_active Ceased
- 2006-08-25 CN CN200910170789A patent/CN101693353A/en active Pending
- 2006-08-25 TW TW095131436A patent/TWI406736B/en not_active IP Right Cessation
- 2006-08-25 EP EP06796810A patent/EP1944125B1/en not_active Not-in-force
- 2006-08-25 KR KR1020087005076A patent/KR101293461B1/en not_active IP Right Cessation
- 2006-08-25 CN CN2006800307352A patent/CN101247923B/en not_active Expired - Fee Related
- 2006-08-25 US US11/990,562 patent/US20090215366A1/en not_active Abandoned
- 2006-08-25 BR BRPI0615020-9A patent/BRPI0615020A2/en not_active IP Right Cessation
- 2006-08-25 JP JP2007532202A patent/JP5033630B2/en not_active Expired - Fee Related
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2008
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Also Published As
Publication number | Publication date |
---|---|
JP5033630B2 (en) | 2012-09-26 |
CN101247923B (en) | 2010-12-08 |
CN101693353A (en) | 2010-04-14 |
BRPI0615020A2 (en) | 2009-08-04 |
IL189314A0 (en) | 2008-06-05 |
RU2008110905A (en) | 2009-09-27 |
KR101293461B1 (en) | 2013-08-07 |
EP1944125A4 (en) | 2009-12-16 |
CA2620407A1 (en) | 2007-03-01 |
IL189314A (en) | 2013-01-31 |
WO2007023949A1 (en) | 2007-03-01 |
RU2430827C2 (en) | 2011-10-10 |
EP1944125B1 (en) | 2012-01-25 |
EP1944125A1 (en) | 2008-07-16 |
US20090215366A1 (en) | 2009-08-27 |
CN101247923A (en) | 2008-08-20 |
AU2006282293A1 (en) | 2007-03-01 |
KR20080037693A (en) | 2008-04-30 |
TW200714416A (en) | 2007-04-16 |
JPWO2007023949A1 (en) | 2009-03-05 |
AU2006282293B2 (en) | 2011-06-23 |
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