TWI355986B - Superhard cutters and associated methods - Google Patents

Superhard cutters and associated methods Download PDF

Info

Publication number
TWI355986B
TWI355986B TW96143399A TW96143399A TWI355986B TW I355986 B TWI355986 B TW I355986B TW 96143399 A TW96143399 A TW 96143399A TW 96143399 A TW96143399 A TW 96143399A TW I355986 B TWI355986 B TW I355986B
Authority
TW
Taiwan
Prior art keywords
cutting
polycrystalline
cutting device
superhard
resins
Prior art date
Application number
TW96143399A
Other languages
Chinese (zh)
Other versions
TW200911462A (en
Inventor
Chien Min Sung
Original Assignee
Chien Min Sung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/560,817 external-priority patent/US7762872B2/en
Priority claimed from US11/786,426 external-priority patent/US7658666B2/en
Application filed by Chien Min Sung filed Critical Chien Min Sung
Publication of TW200911462A publication Critical patent/TW200911462A/en
Application granted granted Critical
Publication of TWI355986B publication Critical patent/TWI355986B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12Dressing tools; Holders therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/14Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Nonmetal Cutting Devices (AREA)

Description

1355986 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種超硬切割裝置,該裝置被用於去除 以各種材料形成之工件上的材料(例如,平创(p|ane)、 精刨(smooth)、拋光(polish)及整修(dress)等等)。因此, 本發明涉及化學、物理以及材料科學領域。 【先前技術】 據估計,半導體工業目前每年花費超過一億美元製造 具有非常平坦且光滑之表面的晶圓。典㈣,化學機械抛 光(CMP )用於半導體裝置的製造程序以獲得光滑的晶圓。 在傳統的製程中,欲進行拋光的晶圓通常固定於一載具 上,該載具定位於一旋轉平台上所附加的拋光墊之上。當 拋光液施加於該拋光墊上且對該載具施以壓力時,透過载 具與旋轉平台有相對運動以對晶圓進行拋光。 雖然此已知製程已被成功地使用多年,其仍遭遇數項 問頌。舉例而·Τ,該傳統製程相對地昂貴,且並非總是有 效率,因為製程完畢後,矽晶圓可能在厚度上不均勾,亦 ,可能不夠光滑。除了被溶劑钱刻而變的過度呈現,’波浪狀 ’梦晶圓表面可能因為製程t所使用的各個研磨顆粒而 k的有缺σ。此外’若欲藉著加速去除率來提高生產率, 必須增加拋光塾上的研磨顆粒尺寸,&導致增加到傷或馨 穿昂貴晶®的風險。此外,由於表面缺口可能呈不連續狀, 該製程生產率會變的非常低,,現階段技術製程的晶 圓表面準備措施一般係昂貴而且緩慢。 5 13559861355986 IX. Description of the Invention: [Technical Field] The present invention relates to an ultra-hard cutting device which is used for removing materials on workpieces formed of various materials (for example, p-ane, fine Smooth, polish and dress, etc.). Accordingly, the present invention relates to the fields of chemistry, physics, and materials science. [Prior Art] It is estimated that the semiconductor industry currently spends more than $100 million annually to fabricate wafers having a very flat and smooth surface. Code (4), Chemical Mechanical Polishing (CMP) is used in the fabrication of semiconductor devices to obtain smooth wafers. In conventional processes, the wafer to be polished is typically mounted on a carrier that is positioned over a polishing pad attached to a rotating platform. When a polishing liquid is applied to the polishing pad and pressure is applied to the carrier, the carrier is moved relative to the rotating platform to polish the wafer. Although this known process has been successfully used for many years, it still encounters several questions. For example, the conventional process is relatively expensive and not always efficient, since the wafer may not be uniform in thickness after the process is completed, and may not be smooth enough. In addition to being overexpressed by solvents, the 'wavy' dream wafer surface may have a lack of σ due to the individual abrasive particles used in process t. In addition, if the productivity is to be increased by accelerating the removal rate, it is necessary to increase the size of the abrasive particles on the polishing crucible, which leads to an increased risk of injury or fragrant wearing of the expensive crystal. In addition, since the surface gap may be discontinuous, the process productivity becomes very low, and the wafer surface preparation measures of the current technical process are generally expensive and slow. 5 1355986

除了上述的考量,半導體上電路的線寬(例如,節點 (node))目前達到病毒般的大小範圍(例如,1〇_1〇〇nm)。 此外,目前正製造較多層的電路以符合增加的先進邏輯設 計需求量。為了設置供製造奈米尺寸構造的多層結構,^ 半導體組裝期間各層結構必須極為平坦且光滑。雖然鑽石 顆粒塾整修器已被有效率地使用於整修該用於對前述積體 電路設計進行拋光的CMp拋光墊,這些整修器並無法適 用於製造具有小於65nm節點的切邊裝置。此乃是因為, 減少銅導線尺寸時,粗糙拋光或是過度拋光所引起的不均 勻厚度將會戲劇性地改變導電性H由於珊,狀的介 電層,此脆弱結構必須透過極為輕緩的拋光以避免碎裂Y 因此,CMP製程所採用的壓力必須大大減少。In addition to the above considerations, the line width (e.g., node) of a circuit on a semiconductor currently reaches a viral size range (e.g., 1 〇 1 〇〇 nm). In addition, more layers of circuitry are currently being fabricated to meet the increased demand for advanced logic designs. In order to provide a multilayer structure for fabricating nano-sized structures, the layers must be extremely flat and smooth during semiconductor assembly. While diamond particle reticle trimmers have been used effectively to refurbish CMp polishing pads used to polish the aforementioned integrated circuit designs, these refractory devices are not suitable for fabricating edge trimming devices having nodes less than 65 nm. This is because, when reducing the copper wire size, the uneven thickness caused by rough polishing or excessive polishing will dramatically change the conductivity H. Due to the dielectric layer, the fragile structure must pass through the extremely gentle polishing. To avoid fragmentation Y, the pressure used in the CMP process must be greatly reduced.

爲此,那些使用銅電解方式(應用材料公司的EcMp) 或是氣膜墊支樓晶圓方式(日本的Semitsu公司)等新CMp 製程減少拋光塾和晶圓之間接觸點的拋光磨力。然而,疒 用=輕緩拋光作業的結果將導致晶圓的抛光率下降。為了木 補償生產率的損失,必須同時對晶圓的整個表面進行拋 光。為此’拋光墊與晶圓的接觸點在面積上必須更小,但 在數目上必須更多。而此做法與CMP以相對大的接觸面 積及相對少量之接觸點的實務相違背。 …因此’為了對脆弱的晶圓進行越來越和緩的拋光,必 須減少CMP拋光塾的粗糖部。然而,為了避免抛光速率 :降,必須創造更多的接觸點。必然地,拋光墊粗縫部位 尺寸上必須更精細而數量上必須更多。然而拋光製程變 6 1355986 得越細緻,到傷晶圓表面的風險變的越高。為了避免刮傷 的風險,所有粗糙部的最高尖端必須完全平等。否則,少 數突出的「殺手粗糙部」會損毀被拋光的晶圓。 v 【發明内容】 本創作係提供一種切割裝置,其包含一基座,該基座 包含複數獨立聚晶(P()|ycrystamne)切割元件該等獨立聚 晶切割元件係固設在一固態有機材料層上。各獨立聚晶切 割元件可包含一致的幾何結構。To this end, new CMp processes such as copper electrolysis (Applied Materials' EcMp) or gas film pad slab wafers (Semitsu, Japan) reduce the polishing force of the contact points between the polishing pad and the wafer. However, the result of the light polishing operation will result in a decrease in the polishing rate of the wafer. In order to compensate for the loss of productivity, the entire surface of the wafer must be polished at the same time. For this reason, the contact point of the polishing pad to the wafer must be smaller in area, but it must be more in number. This practice is contrary to the practice of CMP with a relatively large contact area and a relatively small number of contact points. ...so that in order to make the fragile wafers more and more gentle, it is necessary to reduce the coarse sugar portion of the CMP polishing crucible. However, in order to avoid polishing rate: drop, more contact points must be created. Inevitably, the rough portion of the polishing pad must be finer in size and more in number. However, the finer the polishing process is, the higher the risk of damage to the surface of the wafer. To avoid the risk of scratching, the highest tip of all rough parts must be completely equal. Otherwise, a few prominent "killer roughs" will damage the polished wafer. v [Summary] The present invention provides a cutting device comprising a base comprising a plurality of independent polycrystalline (P()|ycrystamne) cutting elements, the independent polycrystalline cutting elements are fixed in a solid organic On the material layer. Each individual polycrystalline cutting element can comprise a uniform geometry.

本創作另—方面係提供一切割裝置,其包含一基座, 该基座上設置有一固態有機材料層,在該固態有機材料上 固叹有複數獨立聚晶切割元件,每個獨立聚晶切割元件包 括至少-個切割尖端m刀割元件的切割尖端係對齊於 一共同平面上。 本發明另一方面提供一切割裝置的形成方法,其包 含·獲得一基& ;在該基板上將複數獨纟聚晶十刀割元件配 置於-未硬化的有機材料之内,每一個獨立聚晶切割元件 具有一大致上一致的幾何結構,硬化該有機材料以形成一 固態有機材料層,使得每一個獨立聚晶切割元件固設於該 固態有機材料層内。 ' ~ 本發明各種特徵在此概括地敘述,因此,本發明接下 來的詳細說明會更容易被了冑,以致於本發明對技術領域 的貢獻會被更加理解。在接下來本發明伴隨範例性申請專 利範圍的詳細敘述中,本發明其他特徵將會變的更加清 楚’或是可透過本發明的實務被學習。 7 1355986 【實施方式】 在揭露與描述本發明前,可理解的是,本發明並非限 制在之後所揭露的特定的構造、製程步驟或是材料,而是 可擴大到被那些相關領域中熟習技藝者所了解的均等物。 也應了解的是,在此所使用的技術僅被用於敘述特定的實 施例’而非意圖造成限制。In another aspect, the invention provides a cutting device comprising a base, the base is provided with a layer of solid organic material, and a plurality of independent polycrystalline cutting elements are sighed on the solid organic material, and each individual polycrystalline cutting The cutting tip of the element comprising at least one cutting tip m cutting element is aligned on a common plane. Another aspect of the present invention provides a method of forming a cutting device comprising: obtaining a substrate &; disposing a plurality of monolithic polycrystalline cutting elements on the substrate in an unhardened organic material, each independently The polycrystalline cutting element has a substantially uniform geometry that is hardened to form a layer of solid organic material such that each individual polycrystalline cutting element is secured within the layer of solid organic material. The various features of the present invention are generally described herein, and thus, the detailed description of the present invention will be more readily apparent, so that the present invention will be more fully understood. Other features of the present invention will become more apparent from the detailed description of the appended claims. 7 1355986 [Embodiment] Before the present invention is disclosed and described, it is understood that the invention is not limited to the specific structures, process steps or materials disclosed hereinafter, but may be extended to those skilled in the related art. Equals as understood by the person. It should also be understood that the techniques used herein are for purposes of describing particular embodiments only and are not intended to be limiting.

必須注意的是,說明書以及附加的申請專利範圍中所 使用的冠詞「一」及「該」是包含了複數的用法,除非文 章中特定指出其他涵義。舉例而言,「一切割元件」包含 了一個或更多這樣的元件。 定義 在描述與請求本發明時,會根據下列提出的定義來使 用下列術語》It must be noted that the articles "a" and "the" are used in the specification and the scope of the appended claims, unless the meaning For example, "a cutting element" includes one or more such elements. Definitions In describing and requesting the present invention, the following terms are used in accordance with the definitions set forth below:

在此所使用的所有網孔(Mesh)尺寸係美國網孔,除非 有指出其他涵義。此外,因為在特定的「網孔尺寸」中的 各粒子實際上在尺寸上的相異程度可能超過一小幅度的尺 寸分佈範圍’因此,一般所理解的網孔尺寸係指所^集粒 子的平均網孔尺寸。 一剖面,其包含了一 的剖面’其中,該基 齊。例如該剖面在沒 、波浪型剖面、凸剖 在此所使用的「一般平面」係指 基礎表面上之平坦刳面或具特定輪廊 礎表面係為切割元件之峰或尖端所對 有限制的條件下,可包括一平面剖面 面、凹剖面、多階式别面等等。 在此所使用的「邊」係指一切割元件的 部分 其包 8 1355986 含橫跨-部位的某個可量測的寬度 接觸並消除一工件i ,、中,該部位係用於 的刀刀具有一扃访 圖式所示’一典型 對-工件橫擺而 4,該刀刀可相 割「邊」自該工件上去::::或"下材料’藉此以其切 固定工且之的:割「尖端」係指-在切割元件上與一 , 具—最大距離的部位,例如,其為一㈣- 件的第一部位,♦太双t 丹马切割兀 田本發.月物品在使用時, 一工件。可理Μ Μ θ 这地一部位接觸 1干』理解的是,一切割「 Φ -g-.-,, 穴鸲」了包含一平面'一 切割元件接觸一工件㈣=牛料面、尖面或邊緣是該 f置&自哕U 。卩位(附加有切割元件的切割 裝置欲自該工件上去除材料)。 在此所使用的「燒绎,後4t 人 ° ’、S接5兩個兩個或更多獨立 粒子以形成一個連續的固態 子以便至少部分地消除…:的製程涉及結合粒 的空隙。燒結可發生在金屬 拉子或疋鑽石等含碳粒子之間。 金屬粒子的燒結依據材料 的組成而發生在各種溫度中。鑽石粒子的燒結一般需要超 南的壓力以及作為鑽石燒結的輔助物的碳溶劑,此會在以 下有更詳細的討論。燒結輔助物通常出現在燒結的製程 中’並且有-部分輔助物殘留可能在最後成品中。 在此所使用的「超硬」可用於指任何具有莫式硬度 (_0 Hardys)達約8或或更高的結晶材料、聚晶材 料或此等材料的混合物。在某些方面,莫式硬度可達約9 5 或更高。此種材料包含但不受限於鑽石、聚晶鑽石 9 1355986 (P〇lyC「ySta丨丨丨ne Diam〇nd,PCD)、立方氮化蝴(cub丨cB〇「〇n, Nitride, cBN)、聚晶立方氮化硼(pcBN)以及該領域具熟習 技藝者所熟知的超硬材料。超硬材料可以不同形式整合於 本發月之中,。亥形式包含有粒子(partjc丨es)、砂肆(叫⑻、All mesh sizes used herein are U.S. meshes unless otherwise indicated. In addition, because the particle size in a particular "mesh size" may actually differ in size by a small size distribution range, the mesh size generally understood refers to the particle size of the particle. Average mesh size. A section comprising a section 'where the base is aligned. For example, the "general plane" used in the section, the wavy profile, and the convex section means that the flat surface of the base surface or the specific surface of the base is a peak or tip of the cutting element. In this case, a planar section surface, a concave section, a multi-step surface, and the like may be included. As used herein, "edge" means a portion of a cutting element whose package 8 1355986 contains a measurable width contact across the portion and eliminates a workpiece i, which is used for the tool There is a visit to the figure shown as 'a typical pair-piece yaw and 4, the knife can cut the "edge" from the workpiece:::: or " under the material 'by this cut and fixed Cut: "tip" means - the part of the cutting element that has the greatest distance from the one, for example, it is the first part of a (four)-piece, ♦ too double t Danma cuts the field of the field. The monthly items are in use. When, a workpiece.可 Μ θ θ This part touches 1 dry 』 It is understood that a cut "Φ -g-.-,, 鸲" contains a plane 'a cutting element to contact a workpiece (four) = beef surface, pointed surface Or the edge is the f set & The clamp (the cutting device to which the cutting element is attached is intended to remove material from the workpiece). As used herein, "burning, after 4t human °', S is connected to two two or more independent particles to form a continuous solid state to at least partially eliminate...: the process involves bonding the voids of the particles. Sintering It can occur between carbonaceous particles such as metal or diamonds. The sintering of metal particles occurs at various temperatures depending on the composition of the material. The sintering of diamond particles generally requires super-pressure and carbon as an aid to diamond sintering. Solvents, which are discussed in more detail below. Sintering aids usually appear in the sintering process' and there are - part of the auxiliary residues may be in the final product. The "superhard" used herein can be used to mean any Mohs hardness (_0 Hardys) up to about 8 or higher crystalline material, polycrystalline material or a mixture of such materials. In some aspects, Mohs hardness can be up to about 9 5 or higher. Such materials include, but are not limited to, diamonds, polycrystalline diamonds 9 1355986 (P〇lyC "ySta丨丨丨ne Diam〇nd, PCD", cubic nitride butterfly (cub丨cB〇"〇n, Nitride, cBN) Polycrystalline cubic boron nitride (pcBN) and superhard materials well known to those skilled in the art. Superhard materials can be integrated into the moon in different forms. The form of the sea contains particles (partjc丨es). Sand shovel (called (8),

薄膜(films)、層結構(丨ayers)等等。然而,在大部分的例子 令’本發明超硬材料係為聚晶超硬材料的形式,如pcD 以及PcBN材料。重要而值得注意的是,本揭露内容之中 救述了傳統超硬砂肆及聚晶超硬材料之間的區別。Films, layer structures (丨ayers), and the like. However, in most of the examples, the superhard material of the present invention is in the form of a polycrystalline superhard material such as pcD and PcBN materials. Importantly, it is worth noting that the disclosure reveals the difference between traditional superhard sand and polycrystalline superhard materials.

在此所使用的「幾何結構」係指一個透過可容易理解 與認知之數學名詞來描述的形狀。構成「幾何結構」的形 狀範例包含而不受限於立方形、多面體形(包含正多面 體)、三角形(包含等邊三角形、二等邊三角形(|s〇sce|es 丁「加帅及三維三角形)、金字塔形、球形、矩形、 「派」形(Pie Shape)、楔形、八角形及圓形等等。As used herein, "geometry" refers to a shape that is described by mathematical terms that are easily understood and cognitive. Examples of shapes that make up "geometry" include, without limitation, cuboids, polyhedral shapes (including regular polyhedrons), triangles (including equilateral triangles, and equilateral triangles (|s〇sce|es ding" plus handsome and three-dimensional triangles ), pyramid, sphere, rectangle, "Pie Shape", wedge, octagon, and circle, and so on.

在此所使用的「有機材料」係指有機化合物之半固能 或固態複合無晶混合物。因此,「有機材料層」以及「有 機材料基體(Matrix)」可交替使用,其指有機化合物之半 態複合無晶混合物的層結構或塊體。較佳者,該 曰Γ為一由一或多單體透過聚合作用形成的聚合物 或疋異菫分子聚合物(c〇p〇|ymer)。 在此所使用的「金屬」以及「含金屬的」可交替使用, 且係指一金屬或是二個或以 糾孰们生屬σ金。本案所屬技術 領域熟I技藝者可了解金屬 …銅、鉻、鐵、鋼、不鏽::種類’ 網不鐵鋼、鈦、鶴、鋅、錯、翻等 10 及其合金或化合物。 在此所使用的「雜j 」’ ^與一超級磨料材料連接時, 係指此等材料的微粒。A等粒子係可具有各種形狀,例如 ,形、橢圓形、方形、自形(Euhedra丨)等等,以及特定數 1的網孔尺寸。本案領域所公知的,「網孔」,就美國的 網孔而言,係指每單位面積的孔洞數目。 在此所指的「粒子」以及「砂礫」可交替使用。 在此所I曰的切割π件」係敘述可自一工件上去除(切 。下)材料的各種構造。—切割元件可為一塊體,該塊體 可包含後數形成於其上或其内的切割端點、切割脊以及切 d $面等等。可注意的是,這些切割端點、切割脊以及切 割臺面可由該塊體的複數粗糙部或是突出部所形成。此 卜切割兀件可包含-獨立粒子,該粒子可僅包含一形 成於其上的切割端點、切割脊以及切割臺面。 在此所使料「格子」係指複數行方形所形成的圖形。 在此所使用的「機械力」係指衝擊在一物體上以產生 -在t體内部或周圍之機械應力的任何一種物理力。機械 =的範例可為磨擦力(Frictiona丨Force)或是阻力⑴叫 〇「ce)。因此「磨擦力」以及「阻力」一詞可交替使用, 且係指如上所述衝擊在物體上的機械力。 在此所使用的「機械應力」係指當有一意圖壓縮、分 離或是滑動-物體之衝擊性機械力時,每單位面積上對抗 該機械力的抗力。在此所㈣「剖面(Pr〇fj|e)」,係指一 個意欲突出有複數超硬研磨粒子之有機材料層的表面上的 1355986 輪廓。 在此所使用的「機械鍵結(bond)」以及 —)」可交替使用,且係指二物體或廣結構之間主要 由摩擦力所形成的結合介面。在某些例子中,彳透過擴展 結合物體之間的接觸表面積以及加入其他特定的幾何盥物 理結構,例如將—物體環繞在另—物體周@,來增加结合 物體之間的摩擦力。 ▲在此所使用的「大致上」係指一作用、特徵、性質、 狀態mu結果之完全或近乎完全的範圍或是程 ^舉例而言物體「大致上」被包覆,其意指被完全 地包覆’或者被幾乎完全地包覆。與絕對完全程度相差之 卻確可允許偏差程度,係可在某些例子中取決於說明書内 文然而,一般而言,接近完全時所得到的結果將如同在 絕對且徹底完全時得到的全部結果—般。t「大致上」被 使用於描述完全或近乎完全地缺乏一作用、特徵、性二、 狀態、結構、物品或結果時,該使用方式亦是如前述方式 而同等地應用的。舉例而言,—「大致上不包含」粒子的 組成物’係可完全缺乏粒子,或是近乎完全缺乏粒子而到 達如同其完全缺乏粒子的程度。換言之,只要一「大致上 ^包含」原、才斗或7C件的組成物不具有可被量測4寻的效果, •亥組成物實際上仍可包含這些原料或是元件。 在此所使用的「大約」係指給予—數值範圍之端點彈 性’所給予的數值可高於該端點少許或是低於該 許。 12 I355986 在此所使用的複數物品、結構元件、組成員件以及/ 或材料,可以一般列表方式呈現以利方便性。然而,該等 列表應被解釋為:該列表的各成員係被獨立的視為分離且 獨特的成員。因此’基於此列表的成員出現在同一群組中 而沒有其他反面的指示,此列表中的各成員均不應被解釋 為與同列表中的任何其他成員相同的》As used herein, "organic material" means a semi-solid or solid composite amorphous mixture of organic compounds. Therefore, the "organic material layer" and the "organic material matrix" may be used interchangeably, and refer to a layer structure or a bulk of a semi-composite amorphous mixture of organic compounds. Preferably, the oxime is a polymer or a ruthenium osmium molecular polymer (c〇p〇|ymer) formed by polymerization of one or more monomers. As used herein, "metal" and "metal-containing" are used interchangeably and refer to either a metal or two or sigma. Those skilled in the art of the present invention can understand the metal ... copper, chromium, iron, steel, stainless:: type 'net steel, titanium, crane, zinc, wrong, turn 10 and its alloys or compounds. As used herein, "hetero j"' is used to refer to a superabrasive material and refers to particles of such materials. The particle system of A or the like may have various shapes such as a shape, an ellipse, a square, a self-shape (Euhedra), and the like, and a mesh size of a specific number. As is well known in the art, "mesh", in the case of mesh in the United States, refers to the number of holes per unit area. The "particles" and "gravel" referred to herein may be used interchangeably. Here, the "cut π piece" describes various configurations of material that can be removed (cut down) from a workpiece. - The cutting element can be a body that can include cutting ends, cutting ridges, and cutting surfaces on or in which the back number is formed. It may be noted that the cutting end points, the cutting ridges, and the cutting table may be formed by a plurality of roughness or projections of the block. The cutting element can comprise - independent particles which can comprise only one of the cutting end points, the cutting ridges and the cutting table formed thereon. The term "grid" as used herein refers to a pattern formed by a plurality of rows of squares. As used herein, "mechanical force" refers to any physical force that impinges on an object to produce - mechanical stresses in or around the t body. The example of mechanical = can be Frictiona (Force) or resistance (1) is called "ce". Therefore, the terms "friction" and "resistance" can be used interchangeably, and refer to the machine that impacts on the object as described above. force. As used herein, "mechanical stress" refers to the resistance against a mechanical force per unit area when there is an impact mechanical force intended to compress, separate or slide-object. Here, (4) "Pr〇fj|e" means a 1355986 profile on the surface of an organic material layer intended to highlight a plurality of superhard abrasive particles. As used herein, "mechanical bond" and ")" are used interchangeably and refer to a bonding interface formed by friction between two objects or a wide structure. In some instances, 彳 increases the friction between the bonded objects by expanding the surface area of contact between the objects and adding other specific geometric structures, such as wrapping the object around the other object. ▲ "About" as used herein refers to a complete or near-complete range of effects, characteristics, properties, and state mu results or processes. For example, an object is "substantially" covered, meaning it is completely The ground is covered 'either completely or completely. The degree of deviation that is allowed to differ from the absolute degree of completeness may, in some cases, depend on the text of the specification. However, in general, the results obtained when approaching complete will be the same as those obtained when absolutely and completely complete. As usual. When "substantially" is used to describe a complete or near complete lack of an action, feature, sex 2, state, structure, article or result, the mode of use is equally applied as previously described. For example, - "substantially does not contain" the composition of the particles can be completely devoid of particles, or nearly completely lacking particles to the extent that they are completely lacking particles. In other words, as long as the composition of the "substantially included" original, the bucket or the 7C piece does not have the effect of being able to be measured, the composition of the sea can actually contain these materials or components. As used herein, "about" means that the value given to the endpoint elasticity of the range of values can be a little higher or lower than the endpoint. 12 I355986 The plural items, structural elements, group members and/or materials used herein may be presented in a general list for convenience. However, such lists should be interpreted as: Each member of the list is considered to be a separate and distinct member. Therefore, members based on this list appear in the same group without other negative instructions, and each member of this list should not be interpreted as being the same as any other member in the same list.

濃度、數量以及其他數值資料可以一範圍形式表達或 呈現。要了解的是,此範圍形式僅僅為了方便與簡潔而使 用,因此該範圍形式應該被彈性地解釋為不僅包含了被清 楚描述以作範圍限制的數值,亦包含在該範圍中的所有獨 立數值以及子範圍。因此,在此數值範圍中分別包含了獨 立數值,例如2,3及4 ,子範圍,例如彳_3、2·4及等 等,以及1、2、3、4及5。 大值的單一數 何’都應該採 此相同的原則應用於作為最小值或最 值。此外,不論所描述範圍或特徵的幅度為 用樣的解釋。 本發明 本發明提供一種切割裝置及其柏 牛τ找m a 汉再相關製法,該裝置和製 /可使用於切割或影響一工件以自 且仏w 仟以自去該工件上去除材料並 且、.。予該工件一完整光滑及/或 穿署?Γ士 4 ~的表面。本發明切割Concentrations, amounts, and other numerical data can be expressed or presented in a range. It is to be understood that the scope of the present invention is to be construed as being limited in the scope of the Subrange. Therefore, independent numerical values such as 2, 3, and 4, sub-ranges such as 彳_3, 2·4, and the like, and 1, 2, 3, 4, and 5 are included in the numerical range. A single number of large values should be applied as the minimum or maximum value. Moreover, the extent of the described range or feature is a useful explanation. The present invention provides a cutting apparatus and a method for re-correlation of the same, which can be used to cut or affect a workpiece to remove material from the workpiece and to remove material. Is the workpiece completely smooth and/or worn? Gentleman 4 ~ surface. Cutting of the invention

、置可以有益地被使用,例如作為 -r- , , , . , 丁匕〗裝置以自工件上色|J 下材料,作為整修裝置以整修各 置以拋光各種工件。 Μ 1及作為拋光裝 在本發明第一 A與一 B圖 員不的貫施例中,提供一 13 丄355986 切割裝置(1Ga)(例如碟盤),其包選擇性含-基座(12a), 該基座(123)可包含—設置、附加或連接在基座(12a)上的 機材料層(第nB圖的(14))。在該固態有 機材料層上可固設有複數獨立聚晶切割元件(i6a)。各獨立 聚晶切割it件係可具有或顯示—大致上—致的幾何結構, 例如該切割元件的幾何結構可大致上與其他切割元件的幾 何結構-致》在第—B圖所顯示的實施例中,各獨立聚晶 切割凡件⑽)具有-個大致上為立方形的幾何結構。在第 :Β圖所顯示的實施例中,獨立聚晶切割元件(16^具有 —幾何結構,該幾何結構可為三維三角結構。 八 如第- Β與二Β圖所顯示,在本發明某一方面,該等 3 b),該等切割70件的切割尖端可對齊在一共同平 面(2〇a)(20bU。在此例子中,該共同平面係為—平坦面 而具有-纟該固態有機材料基體上的預設高纟。因此,該 ^獨立聚晶㈣元件可透過料精確的方法被固定在_ 有機材料層内’以致於該等切割元件接觸_卫件(圖中未 :)時令各切割元件可以大致上相同的深度自該工件去除 才枓。以此方4 ’當該切割裝置相對一工件移動時,各獨 =晶切^件大致上遭受相同程度的阻力。本發明的此 、徵可有益地限制獨立切割元件提早脫落而可能因此縮 丑工具壽命,及/或損壞被加工之工件的問題。 該獨立切割元件(16a)(16b)可以多種材料形成,在一 貫施例中,可包含聚晶材料或是超硬聚晶材料。雖不必然 14 1355986 侷限於此,該超硬聚晶材料可為聚晶鑽石(p〇|yc「ysta丨丨丨μ Diamond, PCD)緻密結構或是聚晶立方氮化硼 (Polycrystalline cubic Bo「on,Nitrjde,PcBN)緻密結構。 該PCD或是PcBN敏密結構可以多種如下詳述的方法形 成》藉由以聚晶材料形成獨立切割元件,並且將獨立㈣ 元件各別附加到該切割裝置上,可以不需要以聚晶材㈣ 成切割裝置上不被使用於切割的部分,即可達成聚晶切割 元件的有利特性。因此,可達到節省可觀的成本。 本發明切割裝置可有多種應用,且在一發明中,係特 別良好地適用於平创脆弱易損的材料,例如石夕晶圓、破璃 片金屬使用過而欲進行平整化以回收利用的矽晶圓、 ^面板(LCD)玻璃、發光二極體_)基板碳 (Silicon Carbide \ 曰面 , , )日日圓、石英晶圓、氮化石夕以及氧化 ==傳統砂晶圓製程技術中,欲進行拋光的晶圓係 設置在-拋光塾上,該拋光塾附 具施以壓力時置於該拋光塾上且對該載 行抛光。因此,… 台的相對運動對晶圓進 行研磨或是抛光而V曰圓基本上受到極精細的研磨材料進 飞疋抛先而達到-相當光滑的表面。 料進==;圓的某些研磨工作時,在對晶圓等材 的材料碎片,時常產生自材料本體撕下或是1下 果至少有—邱、&所完成的工作少於預期完成度。此結 點(尖來自於該研磨製程㈣研磨材料上極尖的 通“目對彼此不會在-水平幻來局部化壓力以 15 1355986 便令研磨料自一工件上去除材料。 本發明PCD或是pCBN 4:77¾丨- BN切副兀件一般為超硬材質,此 令切割元件緊迫於一晶圓上砗兀且 曰曰W上犄不易變形。由於硬度係為能 量集中度的度量單位,例如,益留^ μ 例如母早位體積的能量,本發明 PCD或PcBN緻密結構係可隹.处θ 傅你J木中此$到一個非常小的體積 而不會損壞。由於該尊好祖直女 寻材枓八有以極少原子構成邊緣的能 力,因此該等材料係可維持一極尖的切割邊。The arrangement can be used beneficially, for example as -r- , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Μ 1 and as a polishing apparatus in the first embodiment of the present invention, a 13 丄 355 986 cutting device (1Ga) (for example, a disk) having a package-containing base (12a) The pedestal (123) may comprise a layer of machine material (FIG. nB (14)) that is disposed, attached or attached to the susceptor (12a). A plurality of individual polycrystalline cutting elements (i6a) may be attached to the solid organic material layer. Each of the individual polycrystalline cutting parts can have or exhibit - substantially the same geometry, for example the geometry of the cutting element can be substantially identical to the geometry of the other cutting elements - the implementation shown in Figure -B In the example, each of the individual polycrystalline cutting pieces (10) has a substantially cuboidal geometry. In the embodiment shown in the figure: the individual polycrystalline cutting element (16^ has a geometric structure, which may be a three-dimensional triangular structure. As shown in the first-second and second-order diagrams, in the present invention In one aspect, the 3b), the cutting tips of the 70 pieces can be aligned in a common plane (2〇a) (20bU. In this example, the common plane is a flat surface and has a - 纟 solid state The preset height of the organic material substrate is high. Therefore, the independent polycrystalline (four) element can be fixed in the organic material layer by the precise method of the material so that the cutting elements contact the guard (not shown in the figure) The individual cutting elements can be removed from the workpiece at substantially the same depth. In this way, when the cutting device is moved relative to a workpiece, each of the individual cutting members substantially suffers the same degree of resistance. This can advantageously limit the early detachment of the individual cutting elements, which may result in ugly tool life and/or damage to the workpiece being machined. The independent cutting element (16a) (16b) can be formed from a variety of materials, consistently applied In the case, it can contain Material or superhard polycrystalline material. Although not limited to 14 1355986, the superhard polycrystalline material can be polycrystalline diamond (p〇|yc "ysta丨丨丨μ Diamond, PCD) dense structure or polycrystalline Polycrystalline cubic Bo", Nitrjde (PcBN) dense structure. The PCD or PcBN sensitive structure can be formed by various methods as detailed below" by forming a separate cutting element with a polycrystalline material, and will be independent (4) The components are individually attached to the cutting device, and the advantageous properties of the polycrystalline cutting element can be achieved without the need for the polycrystalline material (4) to be used in the cutting device that is not used for cutting. Therefore, considerable cost savings can be achieved. The cutting device of the present invention can be used in a variety of applications, and in an invention, it is particularly well-suited for flat and fragile and fragile materials, such as the stone wafer and the glass metal used for flattening for recycling.矽 wafer, ^ panel (LCD) glass, light-emitting diode _) substrate carbon (Silicon Carbide \ 曰, , ) Japanese yen, quartz wafer, nitride lithium and oxidation = = traditional sand wafer process technology The wafer to be polished is disposed on a polishing crucible that is placed on the polishing crucible under pressure and polished. Thus, the relative motion of the wafer grinds the wafer or It is polished and the V-circle is basically subjected to a very fine abrasive material to the first to reach a fairly smooth surface. Feeding ==; Some grinding work in the circle, in the material fragments of the wafer, etc. Often produced from the material body torn off or at least one of the results - Qiu, & less than expected completion of the work. This node (tip from the grinding process (four) on the grinding material on the tip of the point Each other does not localize the pressure at a level of 15 1355986 to cause the abrasive to remove material from a workpiece. The PCD or pCBN 4:773⁄4丨-BN cutting sub-assembly of the present invention is generally a super-hard material, which causes the cutting element to be pressed against a wafer and the crucible is not easily deformed. Since the hardness is a measure of the concentration of energy, for example, the energy of the retention potential, such as the mother's early volume, the PCD or PcBN dense structure of the present invention can be θ. Volume without damage. Because of the ability of the ancestors to find the edge with very few atoms, these materials maintain a sharp cutting edge.

不必然如此’惟在第·_ Α圖所示的本發明—實施例中, 該等獨立聚晶切割元件(16a)可以格狀圖形.的形式例如方 形圖形,被配置於該有機材料層或基座之内或之上。該等 切割元件可以彼此均勻地相間隔而具有一大約1〇〇到大約 800微米(micr〇n)的間距⑷。在本發明某一方面該等獨 立聚晶切割元件可以彼此均勻地相間隔而具有一大約5〇〇 微未的間距(d)。 在第二A圖所顯示的實施例中,該等獨立聚晶元件(16a) 可以複數同’u圓的形式被配置於該有機材料層或基座之内 或之上。在上述的實施例之中,該等獨立切割元件可以彼 此均勻地相間隔而具有一大A】〇〇到大約8〇〇微米的間距 (d)。在本發明一方面,該等獨立聚晶切割元件可以彼此均 勻地相間隔而具有一大約500微米的間距(d)。藉由均勻地 將獨立切割元件相互間隔,在切割製成中施加於切割元件 的阻力可均勻地分佈在每一個切割元件中,此則消除或減 少一個或更多的獨立切割元件提早脫落的風險。一個或更 多的獨立切割元件的提早脫落可導致被處理工件的嚴重損 16 八各:由將—獨立聚晶圓切割元件配置在—有機材料爲 2擊在任何獨立聚晶切割元件的機械應力=枓:以 ::進該獨立切割元件保留在有機: 2保持在保留在固態有機材料層上 小心處理的作業。 j疋对對兩要It is not necessarily the case that the individual polycrystalline cutting elements (16a) may be arranged in the form of a grid pattern, such as a square pattern, in the organic material layer or in the embodiment of the invention as shown in the drawings. Inside or above the pedestal. The cutting elements can be evenly spaced from one another to have a spacing (4) of from about 1 〇〇 to about 800 微米. In one aspect of the invention, the individual polycrystalline cutting elements can be evenly spaced from each other to have a spacing (d) of about 5 Å. In the embodiment shown in Figure 2A, the individual polycrystalline elements (16a) may be disposed in or on the organic material layer or pedestal in a plurality of 'u circles. In the above embodiments, the individual cutting elements may be evenly spaced from one another to have a spacing (d) from a large A 〇〇 to about 8 〇〇 microns. In one aspect of the invention, the individual polycrystalline cutting elements can be evenly spaced from one another to have a spacing (d) of about 500 microns. By evenly spacing the individual cutting elements from each other, the resistance applied to the cutting elements during the cutting process can be evenly distributed in each of the cutting elements, which eliminates or reduces the risk of one or more of the individual cutting elements coming off early. . Early premature detachment of one or more independent cutting elements can result in severe damage to the workpiece being processed. Each of the eight: eight independent plastic wafer cutting elements is placed in - the organic material is 2 strokes in any independent polycrystalline cutting element. =枓: To:: enter the independent cutting element to remain in the organic: 2 to keep the work carefully handled on the solid organic material layer. j疋 right to two

可考慮多種結構與配置來將作用在研磨工 :的機械應力最小化,,對於上述的間距,、:= 一::參數可包含元件自該有機材料層突出的相對高度。 大而明顯高於其他切割元件的切割元件將 ㈣衝擊性機械力,且因此更易於自固態有機大: :。因此,相較於不具均勾高度分佈之切割元件的研 八之下,具均勻高度分佈之切割元件的研磨工具可作用於 更有效地維持研磨工具的完整度。A variety of configurations and configurations can be considered to minimize the mechanical stress acting on the grinder: for the spacing described above, the := one:: parameter can include the relative height at which the component protrudes from the layer of organic material. Cutting elements that are large and significantly higher than other cutting elements will (iv) impact mechanical forces, and therefore are more prone to self-solidification from the solid state: :. Therefore, an abrasive tool having a uniform height-distributed cutting element can act to more effectively maintain the integrity of the abrasive tool than in the case of a cutting element having no uniform height distribution.

在某一方面,大致上所有的獨立切割元件可在有固能 有機材料層上突出这 « ^ ^ 〜、 犬出違—預设尚度。儘管任何對研磨或切割 工,有用的預設高度均會在本發明範疇被列入考慮,在二 特定方面,當用於研磨一工件時,該預設高度可產生一少 於大約20微米的切割深度。在另一特定方面,當用於研 磨一工件時,該預設高度可產生一從大約彳到大約2〇微 米的切割深度。在又一特定方面,當用於研磨—工件時, 該預設高度可產生一從大約1〇到大約2〇微米的切割深 度。在又一特定方面,該預設高度可產生一達到或是高於 17 1355986 50或1 00微米的切割深度。 應注意的是,獨立切割元件在一預設高度上的平整程 =視:割元件之間隔而定。換言之,切割元件之間相離 切割元件所受到的衝擊力影響越大。因…加 切心件間隔的圖形可得益於預設高度的微小變動。曰 切割元件自固態有機材料層上突出達— 複數不同高度,且該高度戈達 有益效果。指定剖面是可以根據^的此亦可達到 而有多種結構的。在一方面=工具的特定使用方式 平坦的剖面中,所有切判-/ 剖面可為一平面。在 平整的。重㈣θ J :件的最高突出點係預期為大致 、疋,雖然這些點可較佳地對齊於-指定剖 面,在切割元件之間可允許 某種高度偏差。 為^本身的限制而產生的 除了平坦剖面,本發明 — -斜度。具有斜面的工且可’該指定剖面具有 元件而衝擊於該工具上的^力用於更均勾地散佈透過切割 或…拋光塾整修:摩::上=:碟盤型磨沙機 的較大的向下力量可抵❹/、較向的中央部位所提供 切割元件在該位置上所受的機=旋轉速度,因而減少 工具中央點到周緣點間呈連續^ ^此’該斜度可自 因而僅出現在工具的—部分丨;;,或者呈不連續狀態, —或複數斜度。在某些方面,該二:地::工具可具有單 緣點的方向傾斜,或者其 ^可/Q考自中央點到周 斜。 ,σ耆周緣點到中央點的方向傾 18 1355986 可考慮各種對固態有機材料層工具有益的斜度。 明申請專利範圍並不意圖被限制於某些特定斜度,因此在In one aspect, substantially all of the individual cutting elements can be highlighted on the layer of solid organic material « ^ ^ ~, the dog is out of the default. While any useful preset height for a grinder or cutter would be considered in the context of the present invention, in two specific aspects, when used to grind a workpiece, the predetermined height can produce a less than about 20 microns. Cutting depth. In another particular aspect, the predetermined height produces a depth of cut from about 彳 to about 2 〇 micrometers when used to grind a workpiece. In yet another particular aspect, the predetermined height produces a depth of cut from about 1 〇 to about 2 〇 microns when used in a grinding-work. In yet another particular aspect, the predetermined height produces a depth of cut that is at or above 17 1355986 50 or 100 microns. It should be noted that the individual cutting elements are flattened at a predetermined height = depending on the spacing of the cutting elements. In other words, the impact of the impact forces on the cutting elements between the cutting elements is greater. The pattern of the centroid spacing can be benefited from small changes in the preset height.切割 The cutting element protrudes from the layer of solid organic material up to a number of different heights, and this height is good for Gotha. The specified profile can be achieved in accordance with this and can be achieved in a variety of configurations. In the flat section on the one hand = the specific use of the tool, all the cut-off-/sections can be a plane. In the flat. Weight (iv) θ J : The highest point of the piece is expected to be approximately 疋, although these points are preferably aligned with the - specified section, allowing some height deviation between the cutting elements. In addition to the flat profile produced by the limitation of ^ itself, the present invention - slope. Work with a bevel and can 'have a profile with elements that impact the force on the tool for more evenly spread through the cut or... Polishing 塾 Renovation: Mo:: Upper =: Comparison of the disc type sander The large downward force can resist the machine=rotation speed of the cutting element provided at the central portion of the relatively central portion, thereby reducing the continuous centering point of the tool to the circumferential point. Since then it only appears in the part of the tool;; or in a discontinuous state, or a complex slope. In some aspects, the second: ground:: tool can have a single edge tilted, or its ^/Q can be measured from a central point to an oblique. , σ 耆 peripheral point to the central point of the direction of inclination 18 1355986 Consider various slopes beneficial to the solid organic material layer tool. The scope of the patent application is not intended to be limited to certain specific slopes, so

❹不同的工具中可以有各種斜度。在某-方面,一 CMP ^塾整修器可有錢具有—自中心到周緣的斜度, 度平均為1/1000。 针 —當工具的一種變形例具有一斜度時,在某些方面,指 二2面可具有H該弧形的—個料實施例係半球 …ome)工具。此弧形剖面作用類似於斜面。卫具可包含 这類的弧形剖面以為了合t苗士 ^ 切宝n 效率地將摩擦力分佈於所有 :件之間’因而減少獨立粒子的衰敗失效並且延長工 具哥命0 d、端% =在此所敛述的,雖然其意圖限制切割元件的的 大/0者才日疋剖面對齊,仍然可發生某些偏差程度。這些 偏差係來自於工具製程的結果。由於可能使用在工具上2 狀及尺寸被給予廣泛的變化,因此這些 取決於特定的應用。此外,當提及指定剖面時, 要u尖端」-詞意圖包含-切割元件的最高突出點, 不論該點為一頂點、邊緣或是面。方向定位、尖端平整产、 ::其他操縱超級磨料粒子的技術係進-步揭露於在二5 年9月9日申請的美國第1 1/223,786號專利申請案以及 = 007年4月10日_請的美國第川叫奶號專利申 請案,兩件皆整合於此以作參考。 就其本身而言,在一方面該等切割元件大多數被配置 以令切割元件尖端偏離指定剖面,偏離程度從大約】到大 19 135598b 約150微米。在„一士二 方面’該專切割元件係被配置以令它 們的尖端偏離指定为丨& j面’而偏離程度從大約5到大約100可以 There are various slopes in different tools. In a certain aspect, a CMP ^塾 refurbisher can have money with a slope from center to periphery, with an average of 1/1000. Needle - When a variant of the tool has a slope, in some respects, the finger 2 can have a H-shaped tool-like hemisphere ...ome tool. This curved profile acts like a bevel. Guards can include such curved profiles in order to efficiently distribute the friction between all the pieces: thus reducing the failure of the individual particles and prolonging the tool's life 0 d, end % = As noted herein, although it is intended to limit the large/zero alignment of the cutting elements, some degree of deviation can still occur. These deviations are the result of the tooling process. Depending on the application, the shape and size of the tool can be varied widely, so these depend on the specific application. Furthermore, when referring to a given section, the u-tip is intended to contain the highest point of the cutting element, whether the point is a vertex, edge or face. Directional positioning, tip leveling, :: Other techniques for manipulating superabrasive particles are disclosed in US Patent Application No. 1 1/223,786, filed on September 9, 2nd, and April 10, 007 _ The US No. 1 patent application for the milk number, both of which are incorporated herein by reference. For its part, on the one hand, the cutting elements are mostly configured such that the cutting element tip deviates from the designated profile, with a degree of deviation from about 135 burs to about 19 135 598b. In the "one aspect two" the cutting elements are configured such that their tip deviations are designated as 丨& j faces' and the degree of deviation is from about 5 to about 100

微米。在又一士I t — ,切割70件係被配置以令它們的尖端偏 離指疋面而偏離程度從大約1 〇到大約75微米。在又 該等切副7L件係被配置以令它們的尖端偏離指定 剖面,而偏離程唐你士 & 一 度從大約1 〇到大約50微米。在另一方面, 切割元件係被配置以令它們的'1、被#你> > *丨 1 A 7匕們的大鳊偏離指定剖面,而偏離 程度從大約5 0到大約1 5 q μ本 Ν人β Ί bU微水。在另一方面,切割元件 係被配置以令它們的尖端偏離指^剖®,而偏離程度從大 約20到大約】00微米。在又一方面,切割元件係被配置 以7匕們的尖端偏離指定剖面,而偏離程度從大約2〇到 大約50微米。 在另一方面,該等切割元件係被配置以令它們的尖端 偏離扎疋剖面,而偏離程度從大約2〇到大約4〇微米。此 外,在另一方面,該等切割元件係被配置以令它們的尖端 偏離指定剖面,而偏離程度少於大約2〇微米。在另一方 面,該等切割元件係被配置以令它們的尖端偏離指定剖 面’而偏離程度少於大約10微米。在又一方面,該等切 割元件係被配置以令它們的尖端偏離指定剖面,而偏離程 度少於大約5微米。在又一方面,該等切割元件係被配置 以令它們的尖端偏離指定剖面,而偏離程度少於大約1微 米。在另一方面,大多數的切割元件係被配置以令它們的 尖端偏離指定剖面,而偏離程度大約低於切割元件平均尺 寸的10%。 20 1355986 切割元件尖端自有機固定物所延伸之距離的決定係須 考量切割元件自該固定物往上延伸的長度與切割元件沉入 固定物表面以下的深度的相較程度。在第'A與一 B圖所 顯示的實施例中’各切割元件(16a)突出於固定物之上的量 與沉入結合物之下的量的比例係大約4比1。在第二A與 二B圖中的實施例中’切割裝置(1〇b)各切割元件(1 6b)的 大約2/3下沉’而大約1/3突出。其他的比例可以是由2〇 比1到大約0 · 2比1,亦包含中間範圍。Micron. At the other end, the cut 70 pieces are configured such that their tips are offset from the finger face by a degree from about 1 〇 to about 75 microns. In addition, the cutting pairs 7L are configured such that their tips deviate from the designated profile, and the deviation is from about 1 大约 to about 50 microns. In another aspect, the cutting elements are configured such that their '1, by #你>> *丨1 A 7's large deviation from the specified profile, and the degree of deviation is from about 50 to about 1 5 q μ 本Νβ Ί bU micro water. In another aspect, the cutting elements are configured such that their tips are offset from the finger, and the degree of deviation is from about 20 to about 00 microns. In yet another aspect, the cutting elements are configured such that their tips deviate from the designated profile with a degree of deviation from about 2 〇 to about 50 microns. In another aspect, the cutting elements are configured such that their tips deviate from the zigzag profile with a degree of deviation from about 2 〇 to about 4 〇 microns. Moreover, in another aspect, the cutting elements are configured such that their tips deviate from the designated profile with a degree of deviation of less than about 2 microns. In the other aspect, the cutting elements are configured such that their tips deviate from the designated section ' with a degree of deviation of less than about 10 microns. In yet another aspect, the cutting elements are configured such that their tips are offset from the designated profile by less than about 5 microns. In yet another aspect, the cutting elements are configured such that their tips are offset from the designated profile by less than about 1 micrometer. On the other hand, most of the cutting elements are configured such that their tips deviate from the specified profile with a degree of deviation that is approximately less than 10% of the average size of the cutting elements. 20 1355986 The distance at which the tip of the cutting element extends from the organic fixture is determined by the extent to which the length of the cutting element extends upwardly from the fixture to the depth below which the cutting element sinks below the surface of the fixture. In the embodiment shown in Figures 'A and B', the ratio of the amount of each cutting element (16a) protruding above the fixture to the amount below the sinking conjugate is about 4 to 1. In the embodiment of Figs. 2A and 2B, the cutting means (16b) of the cutting device (1b) sinks by about 2/3 and protrudes by about 1/3. Other ratios may range from 2 〇 to 1 to about 0 · 2 to 1, and also include the intermediate range.

藉由將獨 元件(16a)(16b)上相對大的部分可沉入於有機固定物二 下。以此方式,提供最大截面以結合固定物材料的面積係 「埋藏」在最大量的以物之下。此項本發明特徵,即是 粒子的最寬部位(切割元件的最大截面)係較接近粒子之 端較遠’因而較寬的一端可以被設置在該有 土的表面之下,相較於傳統的鑽石、人工鑽石或是石卜The relatively large portion of the individual element (16a) (16b) can be submerged under the organic fixture. In this way, the area that provides the largest cross-section to bond the fixture material is "buried" under the maximum amount of material. The feature of the invention is that the widest part of the particle (the largest section of the cutting element) is closer to the end of the particle, so that the wider end can be placed below the soiled surface, compared to the conventional Diamond, artificial diamond or stone

碟’可提供極大的保留效益,傳 隹y 近於砂碟的中·點,也 :二的最大截面集中靠 固定㈣。本發明該最寬部位可在或是靠近的表面以 作端(例如切割端)最遠的-端上疋靠近切割元件離工 ’于、了圖式上所顯示的切割元件形狀,/ 例中,該等切割 料狀,在本發明-實施 疋件係為角錐形(金车 :現此種結構具有多種優點。舉例而心。本發明人 件將體積/質| 〇 角錐狀的切割元 確保切割元件可、纟限度地集中在切割元件的最低部位, u更穩固地被固定在任何形態的基座(例 21 1355986 ^ 、金令、驭連接於該 基座上。此外,錯由令角錐上形成有三角基底,角錐上的 支撑性基底可相對尖端更厚重,並且令尖端更尖銳(例如, 60度)而不會在CMP樾光塾進行整修時損毁或斷裂。 一般而言,更尖銳的切到开丄 70件尖端可對拋光墊進行更The dish's provide great retention benefits, and the 隹y is close to the midpoint of the disc, and the maximum cross section of the second is fixed (4). The widest portion of the present invention can be at or near the end of the surface (e.g., the cutting end) as far as the end (the cutting end) is near the cutting element, and the shape of the cutting element shown in the drawing, / in the example In the present invention - the embodiment is a pyramidal shape (Golden Car: This type of structure has various advantages. For example, the inventor has a volume/quality | a chamfered cutting element ensures cutting The components can be concentrated on the lowest part of the cutting element, and u can be more firmly fixed to the base of any form (Example 21 1355986 ^, gold, 驭 is connected to the base. In addition, the wrong cone Formed with a triangular base, the support substrate on the pyramid can be thicker relative to the tip and sharper the tip (eg, 60 degrees) without breaking or breaking when the CMP phosphor is being refurbished. In general, sharper Cut to 70 tips to polish the polishing pad

快速的切割,以便相對應減少總整修時間。此外,抛光塾 上的粗糙部亦更加尖銳以及密集。此等粗糙部可抛光曰 圓,且/或更快速整修拋光塾而不引起非預期的晶圓不: 勻狀況。或者,方形角錐可使用於較低的切割速率,方形 角錐的尖端角度可更大(例如,9〇度)。因此,方形角錐 ^較寬的㈣路徑’該㈣路徑具有較大阻力且較低 的切割速率。々然而,方形PCD切割器可相較傳統具有從9〇 度到125度等不同尖端角度之單晶鑽石砂碟來的更尖銳。 因錐:聚晶材料一般而言為更有效率的切割器,而 二角錐狀(具有三個側面)聚晶材料則尤其有效率。 制此外,本發明切割元件可以非常緊密控制的幾何結構 而製造’聚晶切割元件在切割拋光墊時較不會撕裂拋。 墊。此外’在主要切割元件上形成有額外的第二切: 可令切割元件有較好的表現。換言之’切割表面的鑛去狀 割Γ的切割作用。反言之,單晶砂碟-般:言 被切下的「碎片」。應注意的是,聚晶切割元== 表面額外地加強了有機材料層的保留度(固定程U規則 不規則表面使得有機材料可較大程度地「抓住」切割元件 22 X抓住具光滑表面的單晶切割元件來強。 二卜,拋光塾整修器時常在整修拋 裁不均勾地分佈在切割元件 7作負 通常必須執行太、 ,、卜邊緣的切割元科 同裎声Μ 士 内側的π件並無遭受相 “度的應力。本發明因應此問題的一方法是 的切割元件,例如PCD砂_ 」 I細“ /磲(例如’罪近切割或修整工Quick cutting to reduce the total renovation time. In addition, the roughness on the polished enamel is sharper and denser. These roughnesses can be polished round and/or more quickly refurbished without causing undesired wafer misalignment. Alternatively, a square pyramid can be used for lower cutting rates, and the tip angle of the square pyramid can be larger (e.g., 9 degrees). Therefore, the square pyramid has a wider (four) path. The (four) path has greater resistance and a lower cutting rate. However, the square PCD cutter can be sharper than conventional single crystal diamond discs with different tip angles from 9 to 125 degrees. Because of the cone: polycrystalline material is generally a more efficient cutter, while the pyramidal (with three sides) polycrystalline material is particularly efficient. In addition, the cutting elements of the present invention can be fabricated with a very tightly controlled geometry. The polycrystalline cutting elements are less likely to tear when to cut the polishing pad. pad. In addition, an additional second cut is formed on the main cutting element: the cutting element is better represented. In other words, the cutting action of the cut surface of the cut surface. Conversely, the single crystal sand disc-like: the "fragment" that was cut. It should be noted that the polycrystalline cutting element == surface additionally enhances the retention of the organic material layer (fixed path U regular irregular surface allows the organic material to "catch" the cutting element 22 to a greater extent The surface of the single crystal cutting element is strong. Second, the polishing 塾 refiner is often in the process of arranging the arranging unevenly distributed on the cutting element 7 to be negative, usually must be performed too, ,, and the edge of the cutting element is the same as the cymbal The inner π piece does not suffer from the phase stress. One method of the present invention in response to this problem is a cutting element, such as PCD sand _ "I fine" / 磲 (for example, 'sin close cutting or finishing work

淋丄… y又刀i固,且/或内側切割元件肽 微向於(例如高出大約1 〇御半、& y ^ - 勺10冑水)外側切割元件。外側切 」凡件可以較大密度設置在該 j丹上例如,它們可 更罪近彼此’且,或被定位在較低的高度。以此設計, j兀件可不以格狀形式分部,而可包含一複數可呈放射 狀對稱的同心圓。Dripping... y is further knives, and/or the inner cutting element peptide is slightly oriented (e.g., about 1 〇 〇, & y ^ - spoon 10 胄 water) outer cutting element. The outer cuts can be placed on the j Dan at a greater density, for example, they can be more sinful to each other's and are positioned at a lower height. In this design, the j-piece can be divided into a lattice-like form, and can include a plurality of concentric circles that are radially symmetrical.

在本發明-實施例中,在該等外側元件上可形成有相 對切割尖端更大的基底(在一方面外側元件可具有三角基 底i ’外側元件可具有—形成在切割尖端上的邊緣而不^ 僅疋一個端點。此外,最外側的切割元件可具有一形成在 該切割尖端上的小臺面(5〇微米)而不是僅僅有—直線邊 緣或是端點’該臺面可以其邊緣切割拋光墊。 在本發明一實施例中,該等切割元件可為不對稱的角 錐。舉例而言,由於切割力一般係由「外側自内側」作用, 該角錐設計可具有一相對較陡峭的斜壁來面對切割裝置的 外周緣,而具有一相對較平緩的斜面來面對尾側(由水平面 异起十度)。換言之,角錐尖端上的頂面部位可不為水平, 而可些微向内「傾斜」以令碎片更容易脫落。本發明此方 23 面不同於鑽石砂礫切 撕裂或切割力量…古傳統切割塾具有負角度以致於 ^ 且有擠壓力量(Compressive Force)。 此本發明實施例,可令吐 ,,_ _ ^ „ 口丨時不會伴隨大量擠壓力量’因 此可更谷易移除拋光墊上的「碎片」。 換言之,本發明人丄々上 # 7 夕數的能量耗費在切割上,而非 化費在塑性變形上。藉 ^ 褙田在角錐上形成垂直壁而令角錐的 垂直壁略小於90度(你丨& 如’大約8〇度)可增進上述的優In the present invention-embodiment, a larger base relative to the cutting tip can be formed on the outer members (on the one hand the outer member can have a triangular base i' the outer member can have an edge formed on the cutting tip without ^ Only one end point. In addition, the outermost cutting element may have a small mesa (5 micron) formed on the cutting tip instead of just having a straight edge or an end point. In one embodiment of the invention, the cutting elements may be asymmetrical pyramids. For example, since the cutting force generally acts from the "outside from the inside", the pyramid design may have a relatively steep slope. To face the outer circumference of the cutting device, and to have a relatively gentle slope to face the tail side (ten degrees from the horizontal plane). In other words, the top surface of the tip of the pyramid may not be horizontal, but may be slightly inward" Tilting to make the pieces easier to fall off. The 23 sides of this invention are different from the diamond grit cutting or cutting force... the ancient traditional cutting 塾 has a negative angle so that it is crowded Compressive Force. In this embodiment of the invention, the spit, _ _ ^ „ 丨 不会 不会 不会 伴随 伴随 伴随 伴随 伴随 伴随 大量 大量 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 。 。 。 。 。 。 。 。 。 The energy consumption of the number of eves #7 is on the cutting, not the plastic deformation. By ^ 褙田 forms a vertical wall on the pyramid and makes the vertical wall of the pyramid slightly less than 90 degrees (you 丨 & 'About 8 degrees' to improve the above excellent

點。在此例子中,角雜亩 η —任玄面上的頂面部位可以更尖銳, 類似於一顛倒角錐。此 此、,,°構可增進切割墊的切割效率,此 乃由於以正肖庶劫ϋ 士, 丁刀。]程序’類似於以剃刀進行刮鬍的 方式。此種設計不可能垃 此私用早晶鑽石設計,因為與此設計 有關的切割邊辨、县赶:A > w 負角度。本發明角錐狀切割元件可 提供t切割邊’由於該正切割邊以形成在切割介面尾側的 車乂平緩斜壁(例如’角錐的非對稱狀)支播正切割邊的結 構’因此正切室,]邊;^θ > 邊不會過早哀敗失效。在一方面,這樣的point. In this example, the top surface of the corner η - any of the sides can be sharper, similar to an inverted pyramid. Therefore, the structure of the cutting pad can improve the cutting efficiency of the cutting pad, which is due to the slashing of the gentleman, the Ding knife. The procedure 'is similar to the way of shaving with a razor. This design is not possible for this private early-crystal diamond design, because the cutting edge associated with this design, county rush: A > w negative angle. The pyramidal cutting element of the present invention can provide a t-cut edge' due to the positive cutting edge to form a sloping sloping wall on the trailing side of the cutting interface (e.g., 'asymmetry of the pyramidal cone') to support the structure of the cutting edge. ,] edge; ^θ > side will not prematurely lapse failure. On the one hand, such a

非對稱結構可由線切割放電加工(Wjre日州「^丨 discharge Machjng,Wjre E_所形成,且其可形成角錐 而7角錐的尖端頂部具有端點、邊緣或臺面。此外’當切 :件係為獨立粒子或砂礫時,此粒子或砂礫可具有預期 的、。構’包含上述以具備用於加工pct粒子之適當形狀之 模具所形成的非對稱結構。 2本發明一實施例中’可調整該等角錐之間隔以調整 刀^端點、邊緣或臺面的接觸壓力。一般而言,角錐彼此 相隔越通,角錐與拋光墊之間的接觸壓力越大。因此,以 24 越少尖端來支撐庳力,久,,、 - 各大鳊刺入的深度越深,而在拋光 堅上所形成的粗糙部越大。一船__ .^ 入 飫而吕,晶圓的拋光速率取 大的粗糙部的尺寸與數量。較密較小的粗輪部與較稀 大的粗縫部有相當的拋光速率。但前者較為均句,不合產 2過度的力量導致脆弱晶圓產生不均勾、到傷、侵姓或是 又壞等問題。當適用在小於90 90不未(nm)的銅以及具低介 i电數(Low-K)且有大於20〇/h a ,d 、 2〇/〇細孔(P〇「e)的介電質時,前述 ^、較街的粗糙部的功效更為顯著真確。 該等獨立聚晶切割元件可以相關領域中具有通常技蓺 者所知道的各種方式及各 " ^ ^ 合禋材科形成。在本發明一方面, 該專切割元件係為矽/碳化 ,,^ 厌亿7垸〜的聚晶鑽石立方體而形 成基體。各立方體包含大約9 电1 ] yU/o體積百分比的鑽石(粒徑 為大約1 〇微米),且复餘邻八 、、邛刀了為石夕或疋碳化石夕。可使 用極少量的鈦以利燒結製程。 代目 °亥專立方體可破壓入一石墨 並且立方體的各邊長尺寸可為。雖然上述例子 體已被證實為特別有效,應了解本發明可使用各 寸以及結構的聚晶材料。 藉由以超硬聚晶材料之猫打留_ ^丄 Λ. ^ ^ ^ 之獨立早兀形成切割元件於定義 的4何形狀中,可更加輕易 割元件。由於定義㈣㈣狀^申精確的方式來配置切 形狀可自一個切割元件到另外一 佈在2精择地複製,各切割元件可相當一致地被定位遍 =討述切割裝置的表面,因而衝擊在各切割元件上的 應力亦可相當一致地遍佈在 ΑΑ 啦忑切割裝置的表面。就先前技 術的研磨砂礫,舉例而言, ° 荨砂襟的整體外形以及尺寸 25 1355986 可能在一砂礫與另一砂礫之間有著相當的不同,此令該等 砂礫難以被精確的佈置。 有機材料層(14〉所使用的材料可相當廣泛地改變。本 案領域具有熟習技藝者了解多種可以被極有效地使用在本 發明實施例的有機材料,在此考慮討論這些有機材料。該 有機材料層可為任何可硬化(Cluab|e)樹脂材料、樹脂或並 他具備足夠強度來固定本發明獨立聚晶切割元件的聚: 物。使用較硬的有機材料層來維持平坦表面而較少彎曲變 形或是不彎曲變形是有益的。此令研磨工具可至少部分整 。非吊小的獨立聚晶切割元件到研磨工具中並且維持這些 小型切割元件在相當平整且—致的高度。 - 此外,多種有機材料可作用於吸收衝擊在有機材料内 在該研磨IS機械力’目而令此機械力分散並且均等遍佈 的相中熟習技藝者可知道任何以引起有機材料層 變即是令;機=2材料層的方法’該有機材料層之相 態來。硬化=少柔軟可曲折的狀態到達剛硬狀 輻射(如紫外限制於令有機材料暴露於熱、電磁 如電子束)、、*、』外線以及微波輻射)、粒子轟擊(例 枯蓺本、有機觸媒、無機觸媒或是其他本案領域孰習 技藝者所知道的硬化方法。 不茶料Μ 在本發明草一 料。熱塑性材料可各“該有機材料層可以是一熱塑性材 化及軟化1 過冷卻及加熱來進行可逆性的硬 另方面,該有機材料可以為熱固性材料。 26 1355986 熱固性材料不能像熱塑性材料般被可逆地硬化或軟化。換 言之,一旦發生硬化,該過程基本上為不可逆。The asymmetrical structure can be formed by wire-cut electrical discharge machining (Wjre Japan "^丨discharge Machjng, Wjre E_, and it can form a pyramid. The tip end of the 7-corner cone has an end point, an edge or a mesa. In addition, the cut-off: the part When it is a separate particle or grit, the particle or grit may have an asymmetrical structure comprising the above-described mold having a suitable shape for processing the pct particle. 2 In an embodiment of the invention, 'adjustable The equiangular cones are spaced to adjust the contact pressure of the end points, edges or mesas. Generally, the pyramids are spaced apart from each other, and the contact pressure between the pyramids and the polishing pad is greater. Therefore, the less the tip is supported by 24庳力,久,,, - The deeper the penetration of each big scorpion, the larger the roughness formed on the polished sturdy. A boat __ .^ enters the 饫 吕, the polishing rate of the wafer is large The size and number of the rough part. The denser and smaller coarse wheel part has a relatively polishing rate with the coarser thick part. However, the former is more uniform, and the excessive force of the non-production 2 causes the fragile wafer to produce uneven hooks. Injury, infringement or Also bad. When applied to copper less than 90 90 not (nm) and with low dielectric (Low-K) and greater than 20 〇 / ha, d, 2 〇 / 〇 pores (P 〇 When the dielectric quality of e), the above-mentioned ^, the roughness of the street is more effective. The independent polycrystalline cutting elements can be in various ways known to those skilled in the relevant art and each " ^ ^ In the aspect of the invention, the special cutting element is a bismuth/carbonization, and a polycrystalline diamond cube is formed into a matrix. Each cube contains about 9 electric 1] yU/o volume. The percentage of diamonds (particle size is about 1 〇 micron), and the balance is adjacent to eight, and the boring tool is Shi Xi or 疋 carbonized stone eve. A very small amount of titanium can be used to facilitate the sintering process. A graphite is pressed in and the length of each side of the cube can be. Although the above examples have proven to be particularly effective, it should be understood that the present invention can use a polycrystalline material of various dimensions and structure. By using a superhard polycrystalline material for the cat Retain _ ^丄Λ. ^ ^ ^ Independent early formation of cutting elements in the definition of 4 In the shape, the component can be cut more easily. Since the definition (4) (four) is precisely arranged, the cutting shape can be copied from one cutting element to another, and each cutting element can be positioned fairly consistently. The surface of the cutting device, and thus the stress impinging on the cutting elements, can also be distributed fairly uniformly over the surface of the ramming device. For the prior art abrasive grit, for example, the overall shape and size of the 荨 sand 襟25 1355986 There may be considerable differences between a gravel and another gravel, which makes it difficult to accurately arrange the gravel. The material used in the organic material layer (14> can vary considerably. Those skilled in the art are aware of a variety of organic materials that can be used very effectively in embodiments of the present invention, and are discussed herein. The organic material layer may be any hardenable (Cluab|e) resin material, resin or polymer having sufficient strength to fix the individual polycrystalline cutting elements of the present invention. It is beneficial to use a harder layer of organic material to maintain a flat surface with less bending or deformation. This makes the grinding tool at least partially complete. Non-hanging small individual polycrystalline cutting elements into the grinding tool and maintaining these small cutting elements at a fairly flat and uniform height. In addition, a variety of organic materials can act to absorb the impact in the organic material in the abrasive IS mechanical force, and the mechanical force is dispersed and evenly distributed throughout the art. Those skilled in the art will know that any change in the organic material layer is made; Machine = 2 method of material layer 'the phase of the organic material layer comes. Hardening = less soft and tortuous state to rigid radiation (such as UV is limited to exposure of organic materials to heat, electromagnetic such as electron beam), *, "outside line and microwave radiation", particle bombardment (such as dry, organic Catalyst, inorganic catalyst or other hardening methods known to those skilled in the art. Non-tea Μ In the present invention, the thermoplastic material can be "the organic material layer can be a thermoplastic material and soften 1 The hardening and reheating of the organic material may be a thermosetting material. 26 1355986 The thermosetting material cannot be reversibly hardened or softened like a thermoplastic material. In other words, once hardening occurs, the process is substantially irreversible.

本發明實施例中有用的有機材料可包含而不限制於: 氨基樹脂(amino res ins)(包含烷基尿素曱醛樹脂(alkylated urea-formaldehyde resins)、三聚氰胺甲搭樹脂 (melamine-formaldehyde resins)、烧基苯並胍胺甲链樹月旨 (alkylated benzoguanamine-formaldehyde resins)) ' 丙 烯酸酯樹脂(acrylate resins)(包含乙烯基丙烯酸酯(vinyl acrylates)、丙烯酸酯環氧化物(acrylated epoxies)、丙浠 酸酯氨基卸酸酯(acrylated urethanes)、丙稀酸聚酯 (acrylated polyesters)、丙烯酸酯壓克力(acrylated acrylics)、丙稀酸酯聚 多元醇(acrylated polyethers)、 乙烯基鍵(vinyl ethers)、丙烯酸酯油(aery丨ated oi丨s)、丙 烯酸酯矽(acrylated silicons)以及相關的甲基丙烯酸酯 (methacrylates))、醇酸樹脂(alkyd resins)(例如氨基卸 酸酯醇酸樹脂(urethane alkyd resins))、聚酯樹脂 (polyester resins)、聚醯胺樹月旨(polyamide resins)、聚亞 醯胺樹脂(polyimide resins)、反應性氨基鉀酸酯(reactjve urethane resins)、聚氨酯樹月旨(polyurethane resins)、酚 類樹脂(phenolic resins)(例如液態酚醛樹脂(resole resins) 及酚醛樹脂(novolac resins))、酚/乳膠樹脂 (phenolic/latex resins)、環氧樹月旨(epoxy resins)(伯j 如 丙二酚環氧樹脂(bisphenol epoxy resins))、異氰酸酯樹 月旨(isocyanate resins)、isocyan urate resins、聚石夕氧烧樹 27 1355986 脂(polysiloxane resins)(包含烷基烷氧基矽樹脂 (alkylalkoxysilane resins))、反應性乙烯基樹脂(reactive vinyl resins)、商標名為Bakelite的樹脂(包含聚乙稀樹 脂(polyethylene resins)、聚丙烯樹脂(polypropylene resins)、環氧樹脂(epoxy resins)、酚類樹脂(phenolic resins)、聚苯乙烯樹脂(polystyrene resins)、苯氧基樹月旨 (phenoxy resins)、花四曱酸二酐樹脂(pery|ene resins)、 聚砜樹脂(polysulfone resins)、乙烯共聚物樹脂(ethyleneThe organic materials useful in the embodiments of the present invention may include, but are not limited to: amino res ins (including alkylated urea-formaldehyde resins, melamine-formaldehyde resins, "Alkylated benzoguanamine-formaldehyde resins" 'acrylate resins (including vinyl acrylates, acrylated epoxies, acrylonitrile) Acid acrylated urethanes, acrylated polyesters, acrylated acrylics, acrylated polyethers, vinyl ethers , aery丨ated oi丨s, acrylated silicons and related methacrylates, alkyd resins (eg amino acid urethanes) Alkyd resins)), polyester resins, polyamide resins, polyamidene resins (polyim) Ide resins), reactive varute resins, polyurethane resins, phenolic resins (eg, resole resins and novolac resins), Phenolic/latex resins, epoxy resins (such as bisphenol epoxy resins), isocyanate resins, isocyan urate resins, Polysilicate resins (including alkylalkoxysilane resins), reactive vinyl resins, resins under the trade name Bakelite (including polyethylene) Polyethylene resins, polypropylene resins, epoxy resins, phenolic resins, polystyrene resins, phenoxy resins, flowers Tetraphthalic acid dianhydride resin (pery|ene resins), polysulfone resins, ethylene copolymer resin (ethylene

copolymer resins)、丙烯睛·丁二烯.苯乙烯(ABS)樹脂 (acrylonitrile-butadiene.-sty「ene (ABS) resins)、丙婦酸 樹脂(acrylic resins)及乙烯基樹脂(Viny| resjns))、丙烯 酸樹脂(acrylic resins)、聚碳酸酯樹脂(po丨yca「b〇nate resins)、以及其混合物與組合物。在本發明一方面,該有 機材料可為一環氧樹脂。再另一方面,該有機材料可為聚 亞醯胺樹脂。又在另一方面,該有機材料可為聚氨酯樹脂。 有機材料可包含多種添加物以增進其使用性。舉例而 =,可使用額外添加的交又結合用劑與填充物來增進有機 材料層的硬化特性。此外,可使用溶劑來增進有機材料層 f軟化狀態時的特性。此外,可在硬化的有機材料層的至 ^部分之内設置一強化材料。此強化材料可作用於增加 有機材料層的強度,並且進一步增進獨立聚晶切割元件在 有機材料層上的保留度。在一方面,該強化材料可包含陶 ,、金屬或是其組成物。陶瓷的例子包含氧化鋁(八…巾丨的)、 石反化銘(Aluminum Carbide)、二氧化石夕(Si|ica)、碳化石夕 28 1355986 奴化錯(Zirconium (Silicon Carbide)、氧化錯 Carbide)以及其混合物。Copolymer resins), acrylonitrile-butadiene.-sty "ABS" resins, acrylic resins and vinyl resins (Viny| resjns) , acrylic resins, polycarbonate resins (po丨yca "b〇nate resins", and mixtures and compositions thereof. In one aspect of the invention, the organic material may be an epoxy resin. The organic material may be a polyamidamide resin. In another aspect, the organic material may be a polyurethane resin. The organic material may include various additives to enhance the usability thereof. For example, an additional addition may be used. The bonding agent and the filler are used to enhance the hardening property of the organic material layer. Further, a solvent may be used to improve the properties of the organic material layer f in a softened state. Further, a strengthening may be provided in the hardened organic material layer. The reinforcing material acts to increase the strength of the organic material layer and further enhance the retention of the individual polycrystalline cutting elements on the organic material layer. In one aspect, the reinforcing material Contains pottery, metal or its constituents. Examples of ceramics include alumina (eight...), aluminum carbide, silica gel (Si|ica), carbonized stone eve 28 1355986 enslavement Zirconium (Silicon Carbide), oxidized Carbide, and mixtures thereof.

:外’在一方面,可在各超級磨料粒子的表面上 二:或是有機金屬化合物以增進該超級磨料 化學結合的方式在有機材料基體上的保留纟。本領域孰習 技藝者可知道並使用極廣泛的各種有機和有機金屬化合 物。有機金屬結合劑可形成超級磨料粒子與有機材料基體 之間的化學結合’ θ而增加粒子在有機材料基體内的保留 又、此方式β亥有機金屬結合劑如同橋樑般作用而形成 在有機材料基體與超級磨料粒子表面之間的連接物。在本 發明一方面,該有機金屬結合劑可為鈦酸鹽(Titanate)、鍅 酸鹽(Zirconate)、石夕烧(silane)及其混合物。 適用於本發明之特定而非限制性矽烷包含:3-縮甘油 趟氧基丙基二甲氧基矽烧(3-g|ycidoxypropyltrimethoxy silane)(可由Dow Corning公司的型號z-6040矽烷取 仟)、Υ·甲基丙細醜氧基丙基三曱氧基石夕坑(γ-methacryloxy propyltrimethoxy silane)(可由 Union Carbide ChemicalsThe outer layer may, on the one hand, be on the surface of each superabrasive particle: or the retention of the organometallic compound on the substrate of the organic material in a manner that enhances the chemical bonding of the superabrasive. A wide variety of organic and organometallic compounds are known and used by those skilled in the art. The organometallic binder can form a chemical bond 'θ between the superabrasive particles and the organic material matrix to increase the retention of the particles in the matrix of the organic material. In this way, the β-organic metal bond acts as a bridge to form an organic material matrix. A junction with the surface of the superabrasive particles. In one aspect of the invention, the organometallic binder can be titanate, zirconate, silane, and mixtures thereof. Specific, but non-limiting, decanes suitable for use in the present invention include: 3-g|ycidoxypropyltrimethoxy silane (available from Dow Corning's model z-6040 decane) , γ-methacryloxy propyltrimethoxy silane (by Union Carbide Chemicals)

Company公司的型號as A-1 74矽烷取得)、β-(3,4-環氧 環己烷)乙基三甲氧基矽烷 (β-(3,4-epoxycyclohexyl)ethyltrimethoxy silane)、γ-氨丙基三乙 氧基石夕烧(γ- am inop ropy Itri ethoxy silane)、Ν-(β·氨乙基)- Y-氨丙基曱基二甲氧基矽烷(N-(P-aminoethyl)-Y-aminopropylmethyldimethoxy silane)(可由 Union Carbide 公司、Shin-etsu Kagaku Kogyo K.K.公司等等 29 1355986 取得)、以及其他由美國第4,795,678號專利案、第 4,390,647號專利案以及第5,038,555號專利案所揭露的 適當矽烷結合劑,該等專利整合於此以供參考。 特定而非限制性的鈦酸鹽結合劑可包含:三(異十八 酸- 0)( 2-丙氡)欽酸鹽(isopropyl triisostearoyl titanate)、 二(異丙苯石碳酸)氧乙酸欽酸鹽 (di(cumylphenylate)oxyacetate titanate)、4-胺基笨磺十 二苯續 欽酸鹽 (4- aminobenzenesulfonyldodecylbenzenesulfonyl titanate)、四辛基雙(雙十三烷亞磷酸鹽)鈦酸鹽 (tetraoctylbis (ditridecylphosphite) titanate)、異丙基三 (问-乙氨基-乙氨基)鈦酸鹽(|50卩「0卩乂丨1「丨((^-6化7丨31111.110- ethylamino) titanate )(可由 Kenrich Petrochemicals. Inc. 公司取得)、新烷氧基鈦酸鹽(neoalkyoxy titanates)(例 如 LICA-01、LICA-09、LICA-28、LICA-44 以及 LICA-97, 亦可由Kenrich公司取得)等等。 特定而非限制性的銘結合劑包含acetoalkoxy aluminum diisopropylate (可由 Ajinomoto K.K.公司取得) 等等。 特定而非限制性的結酸鹽結合劑包含:新烷氧基锆酸 鹽(neoalkoxy zirconates)、LZ-01、LZ-09、LZ- 1 2、LZ-38、 LZ-44、LZ-97 (皆可由 Kenrich Petrochemicals, Inc.公 司取得)等等。其他已知的有機金屬結合劑,例如硫醇 (Thiolate)類化合物,可使用於本發明之中並且列入本發明 30 1355986 的範疇之中。 有機金屬結合劑的用量取決於結合劑以及獨立聚晶切 割元件的表面積。一般而言,有機材料層含〇 〇5%到1 〇% 重a:百分比的有機金屬結合劑則為充足。 δ青參照第二Α圖,在本發明某一方面,切割裝置〇 〇c) 的獨立聚晶切割元件可由材料的聚晶坯(p〇丨ycrysta丨丨丨ne Blank)所形成及/或獲得。第三A圖顯示此種材料坯(3〇), 其包含一形成為碟盤狀的聚晶坯,該碟盤直徑大約3〇mm 且厚度可從大約0.2到2mm。 碟盤(30)可以本案領域熟習技藝者所了解的各種方式、 而被分割為一複數聚晶獨立切割元件,該方式包含而不限 制於電氣化學加工、雷射切割、電漿蝕刻、氧化(形成二 氧化奴或疋一氧化碳氣體)、氫化(形成甲烧氣體)等等。 具較長波長的雷射束(例如摻鈥釔鋁石榴石⑺的…⑴…⑴-Company's model as A-1 74 decane obtained), β-(3,4-epoxycyclohexane)ethyltrimethoxy silane, γ-aminopropyl Γ-am inop ropy Itri ethoxy silane, Ν-(β·aminoethyl)- Y-aminopropyl decyl dimethoxy decane (N-(P-aminoethyl)-Y -aminopropylmethyldimethoxy silane) (available from Union Carbide, Shin-etsu Kagaku Kogyo KK, et al., 29 1 355 986), and other suitable decanes disclosed in U.S. Patent Nos. 4,795,678, 4,390,647, and 5,038,555. Binding agents are incorporated herein by reference. Specific but non-limiting titanate binders may comprise: isopropyl triisostearoyl titanate, bis(isopropyl nepheline carbonate) oxyacetic acid Di(cumylphenylate) oxyacetate titanate, 4-aminobenzenesulfonyldodecylbenzenesulfonyl titanate, tetraoctylbis(ditridecylphosphite) titanate (tetratrimylbis (ditridecylphosphite) ) titanate), isopropyl tris(--ethylamino-ethylamino) titanate (|50卩"0卩乂丨1"丨((^-6化7丨31111.110- ethylamino) titanate ) (Kenrich Petrochemicals Obtained by the company, neoalkyoxy titanates (such as LICA-01, LICA-09, LICA-28, LICA-44, and LICA-97, also available from Kenrich), etc. The non-limiting binding agent comprises acetoalkoxy aluminum diisopropylate (available from Ajinomoto KK), etc. Specific, but not limiting, sulphate binders include: neoalkoxy zirconates, LZ-01 LZ-09 LZ-1, LZ-38, LZ-44, LZ-97 (all available from Kenrich Petrochemicals, Inc.), etc. Other known organometallic binders, such as Thiololate compounds, can be used It is within the scope of the invention and is included in the scope of the invention 30 1 355 986. The amount of organometallic binder depends on the surface area of the binder and the individual polycrystalline cutting elements. In general, the layer of organic material contains 〇〇 5% to 1 〇% weight a: a percentage of the organometallic binder is sufficient. δ青 Referring to the second diagram, in one aspect of the invention, the individual polycrystalline cutting elements of the cutting device 〇〇c) may be a polycrystalline body of material (p Formed and/or obtained by 〇丨ycrysta丨丨丨ne Blank). Figure 3A shows a blank of this material (3〇) comprising a polycrystalline compact formed into a disk shape having a diameter of about 3 〇. Mm and thickness can be from about 0.2 to 2 mm. The disc (30) can be divided into a plurality of polycrystalline individual cutting elements in various ways known to those skilled in the art, including but not limited to electro-chemical processing, Laser cutting, plasma etching, oxygen (formation of oxidized or deuterated carbon monoxide gas), hydrogenation (formation of methane gas), and the like. A laser beam with a longer wavelength (for example, yttrium aluminum garnet (7)...(1)...(1)-

Doped Yttrium Aluminium Garnet,ND:YAG))被用於有效 率地在PCD上形成切割溝槽,具備較短波長的雷射束(例 如激光器(Excimer))可被用於切出在主要切割元件頂部的 第二切割元件,如第三B圖所示。雖然後者切割速度較慢, 使用較短波長通常令其較精確。此外,具較高頻率的能量 可令表面損傷更少。此雷射束使用於對本發明矽晶圓進行 刮或平刨的作業》 在本發明一方面’係以放電加工法(ElectricalDoped Yttrium Aluminium Garnet (ND:YAG)) is used to efficiently form a cutting groove on a PCD. A shorter wavelength laser beam (such as an Excimer) can be used to cut out the top of the main cutting element. The second cutting element is as shown in the third B. Although the latter is slower to cut, the use of shorter wavelengths usually makes it more accurate. In addition, higher frequency energy can cause less surface damage. This laser beam is used for the operation of scraping or flattening the wafer of the present invention. In one aspect of the invention, the electrical discharge machining method (Electrical)

Discharge Machining,EDM)去除 PCD 或是 pcBN 聚合物 上的材料。在此方面,EDM製程可使用一個或多個具有鑽 31 1355986 石的電極。舉例而言’ EDM製程使用的陰極可為摻有硼的 鑽石材料,且酬製程使用的陽極可為pcD(在此例子 中’ PCD 一般需要至少有一部分具導電性)。當電流施加 於摻硼鑽石材料’可仔細且控制性地去除pcD上的材料 以在PCD上形成各種切割元件。Discharge Machining, EDM) removes material from PCD or pcBN polymers. In this regard, the EDM process can use one or more electrodes having a drill 31 1355986 stone. For example, the cathode used in the EDM process can be a boron-doped diamond material, and the anode used in the process can be pcD (in this case, the PCD generally requires at least a portion of the conductivity). When a current is applied to the boron doped diamond material', the material on the pcD can be carefully and controllably removed to form various cutting elements on the PCD.

可了解的’該碟盤(30)被分割為八個形狀與尺寸相同 的楔形塊(32)。在本發明—實施例t,該模形塊(叫可以 上述固態有機材料層的方式設置在—基座(12b)上。如第三 A圖所顯示的本發明中,該楔形塊(32)沿徑向分佈於切割 裝置及/或基座或是基板的表面上。以此方式,楔形塊㈣ 可被配置為令各楔形塊(32)在研磨或處理一工件(圖中未 不)時,承受大致相同的力量(各楔形塊(32)大致上均適 當地固定於有機基體中)。不必,然如&,惟在本發明一實 施例中’ PCD达(30)可具有大約3〇麵的直徑,而基座(1叫 可具有大約1〇Qmm的直徑。僅大約3〇麵大的pcD的超 硬材料可形成具大約1〇〇cm直徑的切割裝置。 如第四圖所不,在本發明一方面,切割裝置(i〇d)各聚 晶獨立切割元件(例如楔形塊(32))的縱軸係沿著切割裝 置的半徑(R)對齊。在此實施例中,聚晶獨立切割元件以相 反方向父錯分佈在該切割裝置上(相鄰的獨立聚晶切割元 件沿耆相反方向)。在基座或是基板(12b)表面上配置切割 _件的方法可根據特定的應用而改變。由於獨立聚晶元件 7形狀與尺寸一致’在基座上設置及配置切割元件變的相 田谷易因此,為了特定應用而改變配置是可相當容易且 32 1355986 精確地完成的。 藉由使用相較於加工 乂斗γ ^ θ ± , 於加工工件(圖中未示)之基座(12b)而 言數置較>、的聚晶材料(例如碟盤(3〇)),可以大為減少 所使用的t晶材料數量而節省可觀的成本。本發明人發 現,本發明切割裝置的性能相當於或是近似於「全面性」 舖設有聚晶切割或研磨工具之傳統切割裝置的性能。 第三A圖的聚晶以叫可被分割為8個相等的部分。 然而,如第五到篦+ -阅α _ 第十一圖所不,碟盤(3〇b)(3〇c)(3〇 分It is understood that the disc (30) is divided into eight wedge-shaped blocks (32) of the same shape and size. In the present invention - embodiment t, the mold block (which may be disposed on the base (12b) in the manner of the solid organic material layer described above. In the present invention as shown in FIG. 3A, the wedge block (32) Radially distributed on the surface of the cutting device and/or the base or the substrate. In this way, the wedge block (4) can be configured such that each wedge block (32) is used to grind or process a workpiece (not shown). , subject to substantially the same force (each wedge block (32) is substantially properly secured in the organic matrix). It is not necessary, however, that in an embodiment of the invention 'PCD up (30) may have about 3 The diameter of the facet, and the base (1 can have a diameter of about 1 〇 Qmm. A superhard material of only about 3 大 large pcD can form a cutting device with a diameter of about 1 〇〇 cm. As shown in the fourth figure No, in one aspect of the invention, the longitudinal axis of each of the polycrystalline individual cutting elements (e.g., wedge blocks (32)) of the cutting device (i〇d) is aligned along the radius (R) of the cutting device. In this embodiment, The polycrystalline individual cutting elements are distributed in the opposite direction to the cutting device in the opposite direction (adjacent independent poly The cutting element is placed in the opposite direction of the crucible. The method of arranging the cutting element on the surface of the base or the substrate (12b) can be changed according to the specific application. Since the shape and size of the individual polycrystalline element 7 are the same, 'the setting is on the base and It is easy to change the configuration for a specific application and it can be accurately performed for 32 1355986. By using the workpiece γ ^ θ ± compared to the machining bucket (the figure is not shown) The susceptor (12b) of the susceptor (12b) can be used to reduce the amount of the t-crystalline material used, thereby saving considerable cost. The inventors have found that the polycrystalline material (for example, a disk (3 Å)) can be reduced in number. The performance of the cutting device of the present invention is equivalent to or similar to the performance of a "comprehensive" conventional cutting device with a polycrystalline cutting or grinding tool. The polycrystalline crystal of the third drawing can be divided into 8 equal parts. However, if the fifth to 篦+-read α _ eleventh figure does not, the disk (3〇b) (3〇c) (3 points

別被分割為12铜相翼邮八γ B 如相分(即為楔形塊(32b)) 、16 =(即為楔_2C))… 以此方式,本發明提供足夠彈性來創造並 配置獨立聚晶切割元件於工具上。考相各種其他可能的 -構其包3而不限制於具不同尺寸與外形的獨立 割元件》 日日刀 請復參照第三B圓,在本發明—方面,各獨立聚晶切 #害…牛(32)可包含複數個形成在該獨立聚晶切割元件: 面上的第二切割元件(4〇)。第二切割元件可被配置為 聚晶獨立切割元件在切割裝置使用時保持一銳利度。^二 切割讀可具有不同形狀,且可包含矩形切割元件: 形切割元件以及三角形切割元件等等。第二切割元件 以是截頭角錐形(丁runcated巧咖加如㈣(圖中未 不)。藉由在主要切割元件上採用第二切割元件, 件的總切割邊長度可以提升達10,〇〇〇倍。 。疋 根據另一方面,本發明提供一切割裝置的製法,其包 33 1355986 含:獲取一基板;在基板上配置有複數獨立聚晶切割元件, 各獨立聚晶元件包含有一致的幾何結構;以及,以—固障 有機材料層將該等獨立聚晶切割元件固定到該基板上。 該製法可包含將各獨立聚晶切割元件的至少一切^ + 端對齊於一共同平面。 範例 下列範例係提供各種製造本發明切割裝置的方法。這 些範例係僅僅作為說明用,而非意圖限制本發明。 範例1 以石夕/碳化矽為基體的獨立燒結鑽石立方體係作為切 割元件以形成CMP拋光墊整修器。各立方體包含有大約 90%體積百分比的鑽石(粒徑尺寸為大約1 〇微 1 ’ 而 剩餘的部分為矽或是碳化矽。可使用極少量的鈦來促進烤 結製程。立方體壓入於一石墨模具,且其各邊長為大約 1mm。 一 %氧化物模具上形成有複數孔洞以容納p C 〇立方 體的尖端。在模具的頂面上設置有一交界層。接著,另— 環氧化物係以真空方式澆鑄於其上。在硬化後,移除模具, 暴露各立方體的尖端。該等尖端成為一拋光墊整修器的切 割尖端。 以矽/碳化矽為基體的燒結聚晶鑽石的碟盤係被分割 為複數個具有大致相同體積的楔形塊。該等楔形塊係作為 切割元件以形成CMP拋光墊整修器。各楔形塊包含大約 34 a^5986 90 °/〇體積百分比的鑽石(粒徑為大約10微米),而其餘 份為矽或是碳化矽。可使用極少量的鈦來促進燒結製 程。Don't be divided into 12 copper phase wings γ B such as phase (ie wedge block (32b)), 16 = (ie wedge 2C)) In this way, the present invention provides sufficient flexibility to create and configure independence The polycrystalline cutting element is on the tool. It is possible to examine various other possibilities - not to limit the independent cutting elements with different sizes and shapes. The Japanese Knife please refer to the third B circle. In the aspect of the present invention, each individual polycrystalline cutting... The cattle (32) may comprise a plurality of second cutting elements (4〇) formed on the face of the individual polycrystalline cutting elements. The second cutting element can be configured such that the polycrystalline individual cutting element maintains a sharpness when the cutting device is in use. ^ Two cutting reads can have different shapes and can include rectangular cutting elements: shaped cutting elements as well as triangular cutting elements and the like. The second cutting element is in the form of a truncated pyramid (a runcated (4) (not shown). By using a second cutting element on the main cutting element, the total cutting edge length of the piece can be increased by up to 10, 〇 According to another aspect, the present invention provides a method of manufacturing a cutting device, the package 33 1355986 comprising: acquiring a substrate; and arranging a plurality of independent polycrystalline cutting elements on the substrate, the individual polycrystalline elements comprising the same And the fixed polycrystalline cutting element is secured to the substrate by a layer of solid barrier material. The method can include aligning at least all of the ends of the individual polycrystalline cutting elements to a common plane. EXAMPLES The following examples are provided to provide various methods of manufacturing the cutting device of the present invention. These examples are for illustrative purposes only and are not intended to limit the invention. Example 1 A single sintered diamond cube based on a stone/ceramic crucible is used as a cutting element to form CMP pad repairer. Each cube contains approximately 90% by volume of diamonds (particle size is approximately 1 〇 micro 1 ' and the remainder矽 or tantalum carbide. A very small amount of titanium can be used to promote the baking process. The cube is pressed into a graphite mold with a length of about 1 mm on each side. A plurality of holes are formed in the % oxide mold to accommodate p C 〇 The tip of the cube. An interface layer is placed on the top surface of the mold. Next, another epoxide is vacuum cast onto it. After hardening, the mold is removed to expose the tips of the cubes. The cutting tip of the polishing pad dresser. The disk of the sintered polycrystalline diamond based on bismuth/carbonized tantalum is divided into a plurality of wedge blocks having substantially the same volume. The wedge blocks are used as cutting elements to form a CMP polishing pad. Renovator. Each wedge block contains approximately 34 a^5986 90 °/〇 volume percent diamond (particle size approximately 10 μm) and the remainder is niobium or tantalum carbide. A very small amount of titanium can be used to facilitate the sintering process.

—環氧化物模具上形成有複數孔洞以容納PCD楔形 塊。在模具的頂面上設置有—交界層。接著,另一環氧化 物係以真空方式澆鑄於其上。在硬化後,移除模具,暴露 各換形塊的表面。該等楔形塊表面(包含表面上的邊緣) 成為一拋光墊整修器的切割元件。 範例3 以六面頂壓機(Cubic Press)壓製的PCD坯的兩側被 剪裁而去除耐火性(Refractory)金屬容器(例如钽(Tanta|um, Ta))。聚晶述外徑則被磨除。PcD坯上結合在碳化鎢 (Wo|fram Carbide,wc)基材上,且該 pcD 層進行 edm 加工而形成以預設圖形分佈的複數角錐。該PCD坯係接 著被分割為複數楔形切割塊,且該等切割塊被設置於一平 坦模具上並令該等切割塊與模具齊平。 該模具係設置在一真空室中,且環氧化物係灌注於其 頂部。最後,在流動的環氧化物上設置一不鏽鋼板並且將 不鏽鋼板朝PCD壓合直到PCD背面與鋼基材之間形成一 環氧化物薄層。在環氧化物硬化後,PCD切割工具受清潔 且在鋼基材背面上形成安裝結構(例如孔)^ 、 pct切割塊可以環形圖形、圓形板、方形等圖形樣式 配置於不鏽鋼板上。這些圖形可最佳化而適用於特—工 CMP應用。 、、叱的 35 1355986 閱讀者應了解的是上述内容僅供說明太 田y π ▲ i 發明原理的應 用。在不連背本發明範疇及精神的前提下, 領域熟習該項技藝者可做出多種修改及 仏 卜叫的配置,且依 附在後的申請專利範圍則意圖涵蓋這歧 » m lL ^ U改與不同的配 置。因此,4發明中目前被視為是最實用且較佳之杏施 例的細節已被揭露如上時,對於熟習該項技藝者而丄貝。 依據本文中所提出的概念與原則來作出而不受限制:多: 包含了尺寸、材料、外形、形態、功能、操作' 及使用上的改變。 ^裝 【圖式簡單說明】 圖 第- A圖係本發明—實施例中_切割裝置的俯視平面 ' =B圖係第—A圖中切割裝置的部分放大視圖。 第二A圖係本發明另一眚 面圖。 竭中-切割裝置的俯視平 第二B圖係第二A FH rk X . • 第三A :圖令切割裝置的部分放大視圖。 一 圖係本發明一實施例中—聚a (Polycrystalline b丨ank)的 取日日坯 ;π俯視千面圖,其中一 包含的獨立聚晶切割元件係 裝置所 Τ丨尔田孩聚晶坯所形成。- A plurality of holes are formed in the epoxide mold to accommodate the PCD wedge block. An interface layer is provided on the top surface of the mold. Next, another epoxide is cast onto it in a vacuum. After hardening, the mold is removed to expose the surface of each of the shaped blocks. The surface of the wedge block (including the edges on the surface) becomes the cutting element of a polishing pad conditioner. Example 3 Both sides of a PCD blank pressed by a Cubic Press were cut to remove a Refractory metal container (e.g., Tanta|um, Ta). The outer diameter of the polycrystalline crystal is removed. The PcD blank is bonded to a tungsten carbide (Wo|fram Carbide, wc) substrate, and the pcD layer is edm processed to form a plurality of pyramids distributed in a predetermined pattern. The PCD blank is then divided into a plurality of wedge-shaped cut blocks, and the cut blocks are placed on a flat mold and the cut blocks are flush with the mold. The mold is placed in a vacuum chamber and the epoxide is poured on top of it. Finally, a stainless steel plate is placed over the flowing epoxide and the stainless steel plate is pressed against the PCD until a thin layer of epoxide is formed between the back of the PCD and the steel substrate. After the epoxide is hardened, the PCD cutting tool is cleaned and a mounting structure (such as a hole) is formed on the back surface of the steel substrate. The pct cutting block can be disposed on the stainless steel plate in a circular pattern, a circular plate, a square, or the like. These graphics can be optimized for use in special-to-work CMP applications. 35 1355986 Readers should be aware that the above is only for the purpose of illustrating the principles of the invention of Taitian y π ▲ i. Without departing from the scope and spirit of the present invention, those skilled in the art can make various modifications and configurations, and the scope of the patent application attached is intended to cover this difference. With a different configuration. Therefore, the details of the apricot embodiment which is currently considered to be the most practical and preferred in the 4 inventions have been disclosed as above, and are mussels for those skilled in the art. It is based on the concepts and principles presented in this article without limitation: many: including changes in size, material, shape, form, function, operation' and use. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a partially enlarged view of a cutting device in the present invention - in the embodiment, a plan view of a cutting device. Figure 2A is another side view of the present invention. The top view of the exhaust-cutting device is flat. The second B-picture is the second A FH rk X. • Third A: A partially enlarged view of the cutting device. Figure 1 is a perspective view of a polycrystalline b丨ank in the embodiment of the present invention; a plan view of a thousand-sided plan, wherein one of the individual polycrystalline cutting elements is included in the field. Formed.

第三Β圖係沿第二Α圖沾D 乐一A圖的B_B線段所呈現的切 的局部放大截面視圖。 q7M牛 第四圖係本發明另— 耳施例中一聚晶远的俯親I & 圖,其中-切割褒置所包含 不曰曰还的俯視千面 晶链形成。 3的獨立聚晶切割元件係由該聚 36 第五圖係本發明一實施 圖,該聚晶坯被分♦日日坧的俯視平面 被刀割為複數獨立切割元件。 第六圖係本發明根據另—實施例 平面圖,該切割裝置包含 j裝置的俯視 的獨立聚晶切割元件。 日日坯所形成 第七圖係本發明根據另—實施例的另 ¥ 視平面圖,該切割裝 裝置的俯 j衣罝包含了禝數個由 成的獨立聚晶切割元件。 圃聚曰曰坯所形 第八圖係本發明—實施例之另曰坧 圖,該聚晶坯被分判A 日日的俯視平面 被刀割為—連串的獨立切割元件。 第九圖係本發明另—實施例之一切 圖,該切割裝置包含·d裝置的俯視平面 立聚晶切割元件。 日日坯所形成的獨 第十圖係本發明另一實施例之 面圖,該切割裝置包人τd裝置的俯視平 J衣置包含了禝數個由第 獨立聚晶切割元件。 圖聚SS坯所形成的 第十一圖係本發明一實施例之另一 圖,該聚晶坯被分~ t日日坯的俯視平面 散刀割為—對獨立切割元件。 第十二圖係本發明另一實施 面圖,該切割裝置包含了複㈣由切刮裝置的俯視平 的獨立聚晶切割元件。 圖聚晶枉所形成 可理解的,上述圖式僅作為進 用途。此外,圖式#— 了解本發明之顯示 粒子大小以及其他方面通常被誇大=作,因此,尺寸’ 大u便能令視圖更加清 37 1355986 、 楚。因此,在製造本發明的切割裝置時,是可以違反圖式 中所表現的特定尺寸及其他方面。 【主要元件符號說明】 (10a)(10b)(10c)(10e)(10d)(10f)(10h)切割裝置 (12a)(12b)基座 (14)固態有機材料層 (16a)(16b)獨立聚晶切割元件 (18a)(18b)切割尖端 # (20a)(20b)平面 (30)(30b)(30c)(30d)碟盤 (32)(32b)(32c)(32d)楔形塊 (40)第二切割元件 (R)半徑 38The third map is a partially enlarged cross-sectional view of the cut along the B_B line of the second map. The fourth figure is a polycrystalline far-reaching I & in the embodiment of the present invention, wherein the -cutting device comprises a relief of a thousand-faced crystal chain formation. The independent polycrystalline cutting element of 3 is an embodiment of the invention. The polycrystalline billet is cut into a plurality of independent cutting elements by a plan view plane of the day and day. Figure 6 is a plan view of the present invention in accordance with another embodiment, the cutting device comprising a top view of a separate polycrystalline cutting element of the device. The seventh figure is formed according to another embodiment of the present invention, and the cutting device comprises a plurality of independent polycrystalline cutting elements. The eighth embodiment of the present invention is a further embodiment of the present invention, which is divided into a series of independent cutting elements by a plan view plane of the A day. The ninth drawing is a diagram of another embodiment of the present invention, the cutting apparatus comprising a planar planar polycrystalline cutting element of the device. The tenth figure formed by the day blank is a plan view of another embodiment of the present invention, and the top view of the cutting device includes a plurality of independent polycrystalline cutting elements. The eleventh figure formed by the present invention is another figure of an embodiment of the present invention, which is divided into a pair of independent cutting elements by a plan view of the day blank. Fig. 12 is a plan view showing another embodiment of the present invention, which comprises a plurality of independent flat polycrystalline cutting elements in a plan view of the cutting device. The formation of polycrystalline silicon is understandable, and the above figures are only for the purpose of use. In addition, Figure # - Understanding the display of the present invention Particle size and other aspects are often exaggerated = so, the size 'large u can make the view clearer 37 1355986, Chu. Thus, in making the cutting apparatus of the present invention, it is possible to violate the particular dimensions and other aspects exhibited in the drawings. [Description of main component symbols] (10a) (10b) (10c) (10e) (10d) (10f) (10h) Cutting device (12a) (12b) Base (14) Solid organic material layer (16a) (16b) Independent polycrystalline cutting element (18a) (18b) cutting tip # (20a) (20b) plane (30) (30b) (30c) (30d) disc (32) (32b) (32c) (32d) wedge block ( 40) second cutting element (R) radius 38

Claims (1)

、申請專利範圍: 年11月8日修正 1、一種超硬切割裝置,其包含: 基座,其卜却番士 、°置有一固態有機材料層;以及 i立聚Ba切割π件係固設在該有固態機材料層 構;獨立聚sa切割70件係具有一大致上一致的幾何結 /、I獨立聚曰曰切割元件包含複數個形成在該獨立聚 =元件表面上的第二切割元件,該等第二切割元件被 2各聚晶獨立切割元件在超硬切割裝置 一說利度。 令各I Vr t申4專利範圍第1項所述之超硬切割裝置,其 元件、曰切割疋件包含有至少-切割尖端,該等切割 疋件的尖端係對齊於一共同平面。 中各請專利範圍第1項所述之超硬切割裝置,其 聚晶切割元件係為一材料聚晶㈣一分割部分。 ^如申請專利範圍第3項所述之超硬切割裝置,其 為該碟盤的一分割部分。且’各獨立聚晶切割元件 5、如申請專利範圍第4項所述之超硬切割裝置直 等晶切割元件係為該碟盤的-均等部分,該等; 寻部分係相互均等。 6、 如申請專利範圍第4項所述之超硬切割裝置,其 各獨立聚晶切割元件係大致上為楔形。 、 7、 如申請專利範圍第4項所述之超硬切割裝置,其 39 2011年1T^8日系正替換頁 中該等獨立聚晶切q元株a --^― 。】το件係沿徑向分佈在該超硬切割裝置 的表面上。 ° 4 8、如申請專利範圍第7項所述之超硬切割裝置,立 中各獨立聚晶切割元件的 '、 '縱轴係沿著該切割元件的半徑對 ^ 〇 如申°月專利Ιε*圍第8項所述之超硬切割裝置’其 中該等獨立聚晶切匈开杜在、 α 係为佈以相反方向交錯分佈在該 超硬切割裝置上。 〇如申明專利範圍第1項所述之超硬切割裝置, 其中該獨立聚晶切割元件包含超硬聚晶切割元件。 11、如申請專利範圍第!0項所述之 置’其中該等超硬聚晶切割元件包含超硬聚晶粒子。 二2 : 一種超硬切割裝置’其包含:複數獨立聚晶切 :彳元件::!設在一固態有機材料層之中,各獨立聚晶切 少—切割尖端,該等獨立聚晶切割元件的 六端係對齊於一共同平面; 其令各獨立聚晶切割元件 曰M + 牛包含複數個形成在該獨立聚 日日切割7C件表面上的第_ 配置為令各聚晶猶立::該等第二切割元件被 一銳利卢。 件在超硬切割裝置使用時保持 置,苴申叫專利範圍第12項所述之超硬切割裝 到大致4該等獨立聚晶切割元件係配置均句地將阻力分佈 到大致遍及各獨立聚晶切割元件上。 1 4、如申請專利範圍第1 2項所述之超硬切割裝 1355986 2〇11年修正替換頁I 置,其中大多數的獨立聚晶切割元件在固態有機材料層上 突伸達一預設高度。 曰 1 5、如申請專利範圍第丄4項所述之超硬切割裝 置,其中當超硬切割裝置被使用於研磨一工件時該預設 南度係產生一少於大約2〇微米的切割深度。 1 6、如申請專利範圍第i 2項所述之超硬切割裝 置’其中各獨立聚晶切割元件係具有一大致上一致 結構。 1 7、如申請專利範圍第丄2項所述之超硬切割襞 置,其中各獨立聚晶切割元件係為材料聚晶述的一分割部 7項所述之超硬切割裝 ’且其中各獨立聚晶切 1 8、如申請專利範圍第工 置,其中該聚晶坯係為一碟盤形狀 割元件為該碟盤的一分割部分。 置, 置, 1 9、如申請專利範圍帛丄8項所述之超硬切割裝 其中各獨立聚晶切割元件係為碟盤的一互相均等部分。 2 0、如中請專利範圍第1 8項所述之超硬切割裝 其中各獨立聚晶切割元件係大致上為楔形。 、 專利範圍帛i 8項所述之超硬 置,其中該等獨立臀° . 料層的表面上。0曰_係沿徑向分佈在該有機; 2 2、如申請專利絡 要圍第12項所述之超硬切割裝 置,其中該等獨立- 衣 日日割70件係大致上有相同尺寸和相 同形狀。 』々祁 1355986 1年11丄8日倏正巻拖頁 2 3、如申請專利範圍第1 置’其中該等獨立聚晶切割元件係被配置為格狀。 2 4、如申請專利範圍第2 3項所述之超硬切割裝 置,其中該等獨立聚晶切割元件係彼此均勻地相間隔而具 有大约100到大約800微米的間距。 2 5如申s月專利範圍第2 4項所述之超硬切割裝 置’其中該等獨立聚晶切割元件係均勻地相間隔而具有大 約500微米的間距。 2 6、如申請專利範圍第1或是:L 2項所述之超硬切 割裝置’其中該固態有機材料層包含一材料,該材料選自 於氨基樹脂(amino resins)、丙烯酸酯樹脂(acry丨ate resins)、醇睃樹脂(alkyd resins)、聚酯樹脂(p〇|yester resins)、聚醯胺樹脂(polyamide resins)、聚亞醯胺樹脂 (polyim 丨 de resins)、聚氨酯樹脂(polyurethane resins)、酚 類樹脂(phenolic resins)、酚/ 乳膠樹脂(Phen0|ic/|atex resins)、環氧樹脂(epoxy resins)、異氰酸酯樹脂 (isocyanate resins)、isocyanurate resins、聚石夕氧烧樹脂 (polysiloxane resins)、反應性乙烯基樹脂(reactive vinyl resins)、聚乙烯樹脂(polyethylene resins)、聚丙婦樹脂 (polypropylene resins)、聚苯乙烯樹脂(polystyrene resins)、苯氧基樹脂(phenoxy resins) '花四甲酸二酐樹脂 (perylene resins)、聚;樹月旨(polysulfone resins)、丙婦 睛-丁 二烯-苯乙烯 (ABS) 樹 脂 (acrylonitrile-butadiene-styrene (ABS) resins)、丙稀酸樹 42 1355986 2011年11月8日修正替換頁 脂(acrylic resins)、聚碳酸酯樹脂(p〇 丨yCarb〇nate resins)、 以及其混合物與組_合物β 2 7、如申請專利範圍第2 6項所述之超硬切割裝 置’其中該固態有機材料層係為一環氧化物樹脂。 2 8、如申請專利範圍第2 6項所述之超硬切割裝 置’其中該固態有機材料層係為一聚氨酯樹脂。 2 9、如申s青專利範圍第2 6項所述之超硬切割裝 置’其中該固態有機材料層係為一聚亞醯胺樹脂。 3 0、如申請專利範圍第2 6項所述之超硬切割裝 置’進一步包含有一設置在該固態有機材料層的至少一部 分之内的強化材料。 3 1、如申請專利範圍第3 〇項所述之超硬切割裝 置,其中該強化材料係選自一群組,該群組由陶瓷、金屬 或是其組成物所組成。 3 2、一種超硬切割裝置製法,其包含: 獲得一基板; 在該基板上配置有複數獨立聚晶切割元件,各獨立聚 晶切割元件具有一大致上一致的幾何結構;以及 以一固態有機材料層將該等獨立聚晶切割元件固定 該基板上; 其中令各獨立聚晶切割元件包含複數個形成在該獨立 聚晶切割元件表面上的第二切割元件,該等第二切割 被配置為令各聚晶獨立切割元件在超硬切割裝置使用時保 持一銳利度。 、 43 1 ^Η^τι^δ 日 3 3、如中請專利範圍第3 2項所述之超硬切割裝置 -共同^各獨立聚晶切割元件的至少—切割尖端對齊於 述之超硬切割裝置 材料聚晶坯的一分 34、如申請專利範圍第32項所 製法,其中各獨立聚晶切割元件係為一 割部分。 製法1 2^巾=請專利範圍第34項所述之超硬切割裝置 、 獨立聚晶切割元件係為一碟盤形狀,且盆中 各獨立聚晶切割元件為該碟盤的—分割部分。 製法31中:申。’專利範圍第3 5項所述之超硬切割裝置 ,其中各獨立聚晶切割元件係為該碟盤的一互相均等 製法 製法 上。 、如甲請專利範圍第35項所述之超 ’其中各獨立聚晶㈣元件係、大致上為楔形。 3 2如申請專利範圍第3 5項所述之超硬切割裝置 ’其中該相立聚晶切以件係沿徑向分佈於該基板 第3 2項所述之超硬切割裝置 割元件係大致上有相同尺寸和 4 0 製法,其 4 1 製法,其 、如申請專利範圍第 不3匕項所述之超硬切割裝置 中該等獨立聚晶切割开杜技 剖70件係被配置為格狀。 、如申請專利範圍第 項所述之超硬切割裝置 _該等獨立聚晶切割矛杜办4 件係彼此均勻地相間隔而 44 1 9、如申請專利範圍 2 製法,其中該等獨立聚晶切 3 相同形狀。 1355986 P011 年”月 具有大約100到大約800微米的^ 。 -- 4 2、如中請專利範圍第3 2項所述之超硬切割裝置 製法,其中該等聚晶切割元件包含超硬聚晶切割元件。 u、 43如申吻專利範圍第42項所述之超硬切割裝置 I法,其中該等超硬聚晶切割元件包含超硬聚晶粒子。 製、44、如申請專利範圍第42項所述之超硬切割裝置 法’其中該等超硬聚晶切割元件係選自於一群組,該群 由聚晶鑽石以及聚晶立方氮化硼所組成。 十一、圖式: 如次頁 45Patent application scope: Amendment of November 8th, 1. An ultra-hard cutting device, comprising: a base, a Bucharest, a solid organic material layer; and an i-poly Ba cutting π-piece system In the solid state machine material layer structure; the independent poly-sa cutting 70 pieces have a substantially uniform geometric knot /, the I independent poly-cutting element comprises a plurality of second cutting elements formed on the surface of the independent poly-element The second cutting elements are distinguished by two polycrystalline separate cutting elements in the superhard cutting device. The superhard cutting device of the first aspect of the invention is characterized in that the element and the jaw cutting member comprise at least a cutting tip, the tips of the cutting members being aligned in a common plane. In the superhard cutting device according to Item 1, the polycrystalline cutting device is a polycrystalline (four) segment of a material. An ultra-hard cutting device as described in claim 3, which is a divided portion of the disk. And each of the individual polycrystalline cutting elements 5, the ultra-hard cutting device as described in claim 4, is a homogeneous portion of the disk, and the homing portions are equal to each other. 6. The superhard cutting device of claim 4, wherein each of the individual polycrystalline cutting elements is substantially wedge shaped. 7. The super-hard cutting device according to item 4 of the patent application scope, 39, 2011, 1T^8, is the replacement page of the independent polycrystalline cutting q-unit strain a --^―. The τ ο pieces are distributed radially on the surface of the superhard cutting device. ° 4 8. The ultra-hard cutting device according to claim 7 of the patent application, wherein the ', ' longitudinal axis of each of the individual polycrystalline cutting elements is along the radius of the cutting element, such as the patent of the moon. * The superhard cutting device of the eighth item, wherein the independent polycrystalline cuts are arranged in the opposite direction on the superhard cutting device. The superhard cutting device of claim 1, wherein the individual polycrystalline cutting element comprises a superhard polycrystalline cutting element. 11, such as the scope of patent application! In the item 0, wherein the superhard polycrystalline cutting elements comprise superhard polycrystalline particles. 2: An ultra-hard cutting device 'includes: a plurality of independent polycrystalline cutting: 彳 element::! Provided in a layer of solid organic material, each of the individual polycrystals cuts less - the cutting tip, the hexagonal ends of the individual polycrystalline cutting elements are aligned to a common plane; which allows each of the individual polycrystalline cutting elements to contain M + cattle A plurality of constitutings formed on the surface of the individual celestial cutting 7C member are arranged such that the respective polycrystalline crystals are juxtaposed: the second cutting elements are sharpened. The pieces are kept in use when the super-hard cutting device is used, and the super-hard cutting device described in claim 12 of the patent scope is approximately 4, and the independent polycrystalline cutting elements are arranged to uniformly distribute the resistance to each of the individual gatherings. On the crystal cutting element. 1 4, as described in the patent scope of item 12, the super-hard cutting 1355986 2〇11-year correction replacement page I, in which most of the independent polycrystalline cutting elements protrude on the solid organic material layer to a preset height. The superhard cutting device of claim 4, wherein the predetermined south degree produces a cutting depth of less than about 2 μm when the superhard cutting device is used to grind a workpiece. . 16. The superhard cutting device of claim i, wherein each of the individual polycrystalline cutting elements has a substantially uniform structure. 1. The super-hard cutting device according to claim 2, wherein each of the independent polycrystalline cutting elements is a super-hard cutting device according to item 7 of the material polycrystalline description. The independent polycrystalline cut 18 is as set forth in the patent application scope, wherein the polycrystalline billet is a disc-shaped cutting element which is a divided portion of the disc. 9. The superhard cutting device as described in claim 8 wherein each of the individual polycrystalline cutting elements is an equal portion of the disk. 20. The superhard cutting device of claim 18, wherein each of the individual polycrystalline cutting elements is substantially wedge shaped. The ultra-hardness of the patent range 帛i 8 item, wherein the independent hips are on the surface of the layer. 0曰_ is distributed along the radial direction in the organic; 2, as in the patent application, the superhard cutting device according to Item 12, wherein the independent-clothing day 70 pieces are substantially the same size and The same shape. 々祁 1355986 1st, 11th, 8th, 倏 巻 巻 2 2 3, as claimed in the first section 'where the independent polycrystalline cutting elements are configured in a lattice shape. The superhard cutting device of claim 2, wherein the individual polycrystalline cutting elements are evenly spaced from each other and have a pitch of from about 100 to about 800 microns. The superhard cutting device of claim 24, wherein the individual polycrystalline cutting elements are evenly spaced apart to have a pitch of about 500 microns. 2. The ultra-hard cutting device according to claim 1 or claim 2, wherein the solid organic material layer comprises a material selected from the group consisting of amino resins and acrylate resins (acry).丨ate resins), alkyd resins, polyester resins (p〇|yester resins), polyamide resins, polyim 丨de resins, polyurethane resins ), phenolic resins, phenol/latex resins, epoxy resins, isocyanate resins, isocyanurate resins, polysiloxanes Resins), reactive vinyl resins, polyethylene resins, polypropylene resins, polystyrene resins, phenoxy resins Perylene resins, poly; polysulfone resins, acrylic acid-butadiene-styrene (ABS) resin (acrylonitrile-butadiene- Styrene (ABS) resins), acrylic tree 42 1355986 November 8, 2011 amendments to acrylic resins, polycarbonate resins (p〇丨yCarb〇nate resins), and mixtures and combinations thereof The superhard cutting device of the invention of claim 26, wherein the solid organic material layer is an epoxide resin. 2. The superhard cutting device of claim 26, wherein the solid organic material layer is a polyurethane resin. 2. The superhard cutting device as described in claim 26, wherein the solid organic material layer is a polyamidamide resin. 30. The superhard cutting device of claim 26, further comprising a reinforcing material disposed within at least a portion of the solid organic material layer. The superhard cutting device of claim 3, wherein the reinforcing material is selected from the group consisting of ceramic, metal or a composition thereof. 3, a method for manufacturing an ultra-hard cutting device, comprising: obtaining a substrate; and arranging a plurality of independent polycrystalline cutting elements on the substrate, each of the individual polycrystalline cutting elements having a substantially uniform geometric structure; and a solid organic a layer of material securing the individual polycrystalline cutting elements to the substrate; wherein each of the individual polycrystalline cutting elements comprises a plurality of second cutting elements formed on a surface of the individual polycrystalline cutting elements, the second cuts being configured to Each polycrystalline individual cutting element maintains a sharpness when used in an ultra-hard cutting device. , 43 1 ^Ηττ^δ日3 3, as described in the patent scope of item 32, the superhard cutting device - common ^ each of the individual polycrystalline cutting elements at least - the cutting tip is aligned with the superhard cutting A portion 34 of the device material polycrystalline blank, as in the method of claim 32, wherein each of the individual polycrystalline cutting elements is a cut portion. Method 1 2^ towel = please refer to the ultra-hard cutting device of the scope of claim 34, the independent polycrystalline cutting element is in the shape of a dish, and the individual polycrystalline cutting elements in the basin are the divided parts of the disk. In the law 31: Shen. The superhard cutting device of claim 35, wherein each of the individual polycrystalline cutting elements is a mutual equalization process of the disk. For example, in the case of the above-mentioned patent scope, the super-', each of the individual polycrystalline (four) elements, is substantially wedge-shaped. [2] The superhard cutting device of claim 35, wherein the phase of the polycrystalline cutting device is radially distributed on the substrate, and the superhard cutting device of the substrate is substantially There are the same size and 40 method, the 4 1 method, which, as in the ultra-hard cutting device described in the third paragraph of the patent application, is configured as a grid of 70 pieces of independent polycrystalline cutting. shape. The ultra-hard cutting device as described in the scope of the patent application _ the independent polycrystalline cutting spears 4 are evenly spaced from each other and 44 1 9 , as in the patent scope 2 method, wherein the independent polycrystals Cut 3 the same shape. 1355986 P011 "月" has a hardness of about 100 to about 800 micrometers. - 4, 2, the method of superhard cutting device according to the third aspect of the patent, wherein the polycrystalline cutting element comprises superhard polycrystalline U. The method of superhard cutting device according to claim 42, wherein the superhard polycrystalline cutting element comprises superhard polycrystalline particles. 44, as claimed in claim 42 The superhard cutting device method of the invention wherein the superhard polycrystalline cutting elements are selected from the group consisting of polycrystalline diamond and polycrystalline cubic boron nitride. Next page 45
TW96143399A 2006-11-16 2007-11-16 Superhard cutters and associated methods TWI355986B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/560,817 US7762872B2 (en) 2004-08-24 2006-11-16 Superhard cutters and associated methods
US11/786,426 US7658666B2 (en) 2004-08-24 2007-04-10 Superhard cutters and associated methods

Publications (2)

Publication Number Publication Date
TW200911462A TW200911462A (en) 2009-03-16
TWI355986B true TWI355986B (en) 2012-01-11

Family

ID=39662690

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96143399A TWI355986B (en) 2006-11-16 2007-11-16 Superhard cutters and associated methods

Country Status (3)

Country Link
KR (1) KR20080045075A (en)
TW (1) TWI355986B (en)
WO (1) WO2008063599A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199357B2 (en) 1997-04-04 2015-12-01 Chien-Min Sung Brazed diamond tools and methods for making the same
US9868100B2 (en) 1997-04-04 2018-01-16 Chien-Min Sung Brazed diamond tools and methods for making the same
US9409280B2 (en) 1997-04-04 2016-08-09 Chien-Min Sung Brazed diamond tools and methods for making the same
US9221154B2 (en) 1997-04-04 2015-12-29 Chien-Min Sung Diamond tools and methods for making the same
US9463552B2 (en) 1997-04-04 2016-10-11 Chien-Min Sung Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods
US9238207B2 (en) 1997-04-04 2016-01-19 Chien-Min Sung Brazed diamond tools and methods for making the same
US8678878B2 (en) 2009-09-29 2014-03-25 Chien-Min Sung System for evaluating and/or improving performance of a CMP pad dresser
US8393934B2 (en) 2006-11-16 2013-03-12 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US9138862B2 (en) 2011-05-23 2015-09-22 Chien-Min Sung CMP pad dresser having leveled tips and associated methods
US9724802B2 (en) 2005-05-16 2017-08-08 Chien-Min Sung CMP pad dressers having leveled tips and associated methods
CN102666021B (en) * 2009-12-29 2015-04-22 圣戈班磨料磨具有限公司 Anti-loading abrasive article
WO2012162430A2 (en) 2011-05-23 2012-11-29 Chien-Min Sung Cmp pad dresser having leveled tips and associated methods

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6319108B1 (en) * 1999-07-09 2001-11-20 3M Innovative Properties Company Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece
JP2004025401A (en) * 2002-06-27 2004-01-29 Airtec Japan:Kk Disc-shaped diamond grinding wheel
US7169029B2 (en) * 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article

Also Published As

Publication number Publication date
WO2008063599A2 (en) 2008-05-29
WO2008063599A3 (en) 2011-09-15
TW200911462A (en) 2009-03-16
KR20080045075A (en) 2008-05-22

Similar Documents

Publication Publication Date Title
TWI355986B (en) Superhard cutters and associated methods
US7658666B2 (en) Superhard cutters and associated methods
US7762872B2 (en) Superhard cutters and associated methods
TW200927382A (en) CMP pad conditioners with mosaic abrasive segments and associated methods
TWI548485B (en) Cmp pad dresser having leveled tips and associated methods
TWI356449B (en) Cmp pad conditioners and associated methods
JP3829092B2 (en) Conditioner for polishing pad and method for producing the same
TWI304761B (en) Superhard cutters and associated methods
US8393934B2 (en) CMP pad dressers with hybridized abrasive surface and related methods
US20190091832A1 (en) Composite conditioner and associated methods
US8622787B2 (en) CMP pad dressers with hybridized abrasive surface and related methods
TW201016387A (en) CMP Pad Dressers with Hybridized abrasive surface and related methods
TW200940258A (en) CMP pad dressers
WO2009043058A2 (en) Cmp pad conditioners with mosaic abrasive segments and associated methods
TW201143979A (en) Cmp pad dressers with hybridized conditioning and related methods
TW201250813A (en) CMP pad dresser having leveled tips and associated methods
JP2008132560A (en) Single crystal superabrasive grain and superabrasive grain tool using single crystal superabrasive grain
CN103367242B (en) Combined trimmer and manufacturing method thereof and chemical mechanical polishing method
US20170232576A1 (en) Cmp pad conditioners with mosaic abrasive segments and associated methods
TW201100198A (en) Assembly type trimmer
US20150017884A1 (en) CMP Pad Dressers with Hybridized Abrasive Surface and Related Methods
US20140120807A1 (en) Cmp pad conditioners with mosaic abrasive segments and associated methods
JP6736151B2 (en) Cutter wheel and manufacturing method thereof
JP4976053B2 (en) Whetstone
IE20080376U1 (en) An abrasive material, wheel and tool for grinding semiconductor substrates, and method of manufacture of same