201143979 六、發明說明： 【發明所屬之技術領域】 本發明大體上係關於用以自化學機械拋光墊移除不必 要的材料或雜質（例如修光、研磨、修整等）的化學機械 拋光墊修整器。因此，本發明涉及化學、物理學及材料科 學領域。 【先前技術】 目前半導體工業每年花費超過十億美元來製造具有極 平坦及光滑之表面的矽晶圓，目前可使矽晶圓的表面達到 平坦、光滑之效果的已知技術非常多種。此等技術中最常 見者為化學機械拋光「Chemical Mechanicai p〇Hshing (CMP)」之方法，其包括使用研磨墊與研磨漿料之組合。所 有化學機械拋光方法之中心重點為在諸如以下之態樣中達 成南性能水準：經研磨晶圓之表面均一性、IC電路之光滑 度、與晶圓的生產率極為相關的材料移除率以及就經濟效 益而言，化學機械拋光方法中所使用之消耗品的壽命等。 【發明内容】 本發明提供一種化學機械拋光墊修整器及其修飾與修 整化學機械拋光墊的方法，在一方面中，舉例而言，本發 明提供一化學機械拋光墊修整器。此類拋光墊修整器可包 括一支撐基質（support matrix)及複數個設置在該支撐基質 上的平滑超研磨粒子（smooth superabrasive panicle)，該複 數平滑超研磨粒子可用於在一拋光墊上切割出大的粗糙部 (large asperity);該拋光墊修整器亦可包含有複數個設置在 3 201143979 該支撑基質上的粗糙超研磨粒子’該複數粗糙超研磨粒子 (rough SUperabrasive particle)可用於在該複數大的粗糙部 上切割出研磨液渠道（Slurry channel)，其中該複數研磨液渠 道係在化學機械拋光製程中，用以促進研磨液的活動遍^ 於該複數大的粗糙部。 可考慮各種構型的超研磨粒子。在一方面中，舉例而 S，該複數個粗糙及平滑超研磨粒子之切割尖端實質上整 平且高度介於大約1至10微米之間。在另一方面中，該複 數平滑超研磨粒子係分成一個或多個分離的平滑超研磨粒 子區塊，且該複數粗糙超研磨粒子係分成一個或多個分離 的粗糙超研磨粒子區塊。在一較為特定的方面中，該複數 平滑超研磨粒子區塊以及該複數粗糙超研磨粒子區塊呈間 隔設置j或者，該複數平滑超研磨粒子及該複數粗糙超研 磨粒子係均勻間隔式交錯散佈於該支撐基質。 可用來修飾一化學機械拋光墊的任何超研磨材料及材 料構型應被認為是在本發明的範疇之内。在一方面中，該複 數平滑超研磨粒子為單晶超研磨粒子，舉例而言，單晶係可 包括鑽石、立方氮化硼、陶瓷等材料。在一方面中，該單晶 超研磨粒子為單晶鑽石。在另—方面該複數粗縫超研磨 粒子為多晶超研磨粒子。舉例而言，乡晶材料係可包括鑽 石、立方氮化领（cubic boron nitride，cBN)、陶瓷等材料。在 一方面中，該多晶超研磨粒子為多晶鑽石。又另一方面中’ 該複數粗链超研磨粒子為具有破裂的尖端、邊緣、面或其組 合的單晶超研磨粒子。 可考慮各種不同的支撐基質材料，且任何可與超研磨 4 201143979 粒子緊密相接的材料均應被認為是在本發明的範疇之内。 該基質材料可包括，但不限於硬焊金屬、含有電鍍金屬的 固體金屬、有機材料、陶瓷等。在一方面中，該有機基質 材料係可包括，但不限於胺基樹脂（amino resins)、丙烯酸 醋樹脂（acrylate resins)、醇酸樹脂（alkyd resins)、聚醋樹脂 (polyester resins)、聚酿胺樹脂（polyamide resins)、聚亞酿 胺樹脂（polyimide resins)、聚氨醋樹脂（polyurethane resins)、盼链樹脂（phenolic resins)、紛链/乳膠樹脂 (phenolic/latex resins)、環氧樹脂（epoxy resins)、異氰酸酉旨 树脂（isocyanate resins)、異氰尿酸 g旨樹脂（isocyanurate resins)、聚石夕氧烧樹脂（p〇iySii〇xane resins)、反應型乙稀基 樹脂（reactive vinyl resins)、聚乙烯樹脂（polyethylene resins)、聚丙烯樹脂（p〇iypr0pyiene resins)、聚苯乙烯樹脂 (polystyrene resins)、苯氧樹脂（phenoxy resins)、二萘嵌_ 苯 樹脂（perylene resins)、聚砜樹脂（p〇lysuif〇ne resins)、丙烯 腈-丁 二稀·苯乙烯共聚物（aCry1〇nitrile butadiene styrene resins)、丙烯酸樹脂（acrylic resins)、聚碳酸酯樹脂 (polycarbonate resins)及其組合物》 在本發明的另一方面中，係提供一種調節化學機械拋 光塾的方法。此類方法可包括利用平滑超研磨粒子於一拋 光墊的表面切割出大的粗糙部，以及利用粗糙超研磨粒子 於該拋光墊的該大的粗糙部上切割出研磨液渠道，其中該 複數研磨液渠道促進研磨液的活動遍及於該複數大的粗縫 可考慮各種於化學機械拋光塾切割大的粗縫部及研j 液渠道的技術。在-方面中，舉例而言，該方法係以相同 201143979 的化學機械拋光墊修整器同時切割出該複數大的粗糙部及 。亥複數研磨液渠道》在另一方面中，該方法係以不同的化 子機械拋光塾修整器依序切割出該複數大的粗縫部及該複 數研磨液渠道。 在本發明的另一方面中，提供一化學機械拋光墊。此 類拋光塾可包括一切割形成有複數個大的粗縫部之化學機 械拋光墊材料，以及複數個切割形成於該複數大的粗糙部 中的研磨液渠道，該複數研磨液渠道係用以於化學機械拋 光製程中，促進研磨液的活動遍及於該複數大的粗糙部。 在一特定的方面中，該化學機械拋光墊材料為一無孔 (poreless)化學機械拋光墊材料。 由此’本發明之各種特徵已廣泛地概述，以便可更能 理解下文所描述的本發明實施方式，且可更了解本發明對 此項技術之貢獻。根據以下本發明之實施方式及權利要 求，本發明之其他特徵將更加清楚，亦可藉由實施本 得以了解》 【實施方式】 在揭示並描述本發明之前，應瞭解，本發明不限於本 文揭示之特定結構、方法步驟或材料，而是可擴展至如可 由一般熟習相關技術者識別的其等效形式。亦應瞭解，本 文中所使用之術語僅用於描述特定具體實例之目的，而不 意欲具限制性。 必須指出，除非上下文中另外清楚地指定，否則如本 說明書及任何隨附或以下中請專利範圍中所使用之單數形 式「一（a，an)」及「該（the)」包括複數個指示物。因此，舉 6 201143979 例而s ’提及「_粒子（apaniele)」可包括—或多個該複數 粒子。 定義 在描述及主張本發㈣，將根據下文所闡述之定義使用 以下術語。 如本文中所使用，「拋光塾修整器㈣瞻仙⑽⑺」 為化學機械拋光塾修整器中不會明顯地觸及襯墊而不足以 自表面移除碎屑、使表面變形、自表面切出凹槽的超研磨 粒子。 如本文中所使用，「基材（substrate)」或「支撐基材 (suppcm substrate)」係指支撐有機基質之拋光墊修整器的一 部份，可貼附於該研磨材料’以及可承載研磨材料、切割 兀件、控制兀件等的片段基f。本發明所使用的基材可為 各種形狀、厚度或材料，其可用足以讓—拋光墊修整器達 成所欲達到之目的的方式承載研磨材料。基材可為實心材 料、粉末材料（加工後成為實心）或可撓性材料⑺Mibb matenaip典型基材的例子包括但不限於金屬、金屬合金、 陶竞、相對應的聚合物或其他有機材料、玻璃及其混合物 或組合物。 如本文中所使用，「磨蝕表面（abrading surface)」或「磨 蝕點（abrading point)」可用以指一接觸化學機械拋光墊和自 化學機械拋光墊移除材料的研磨片段切割元件的表面、邊 緣、面、點或尖端。一般而言，當該研磨片段或切割元件 與化學機械拋光墊相互接觸時，該磨蝕表面或點係為該研 磨片段最先與該化學機械抛光塾接觸的部分。 201143979 如本文中所使用，「片段基質（segment blank)」係指與 之前所定義之拋光墊修整器的基材相似的結構。片段基質 係用於本發明以承載研磨層：將該複數研磨層附著在該拋 光墊修整器之基材通常係藉由將該片段基質附著在該抛光 墊修整器的基材，重要的是要注意各種將該複數片段基質 附著在基材上的方法以及各種將該複數研磨層附著在片段 基質的方法皆在此討論》需要了解的是，這些在此所述的 各種附著機制皆能交換使用，即’當討論將一片段基質附 著在基材上的方法’所討論之附著方法也能用於將—研磨 層附著於一片段基質。然而，為了要討論之任何特別的化 學機械拋光墊修整器’需要了解的是，該複數將研磨層附 著於片段基質的附著方法能與用於將片段基質附著至該拋 光墊修整器基材上的附著方法不同或相同。 如本文中所使用，「超硬（superhard)」可能被用來指任 何結晶或多晶的材料，亦或是這種材料的混合物，其莫氏 硬度（Mohr，s hardness)係大約等於或大於8,而在一些方 面中，該莫氏硬度（Mohr’ s hardness)係大約等於或大於 9.5，這樣的材料包括但不限制為鑽石、多晶鑽石 (polycrystalline diamond· ΡΓ：η、、六士总 & ™ 办方.201143979 VI. INSTRUCTIONS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention generally relates to chemical mechanical polishing pad conditioning for removing unnecessary materials or impurities (eg, polishing, grinding, trimming, etc.) from a chemical mechanical polishing pad. Device. Accordingly, the present invention relates to the fields of chemistry, physics, and materials science. [Prior Art] At present, the semiconductor industry spends more than one billion US dollars per year to manufacture germanium wafers with extremely flat and smooth surfaces. Currently, there are many known techniques for making the surface of germanium wafers flat and smooth. The most common of these techniques is the chemical mechanical polishing "Chemical Mechanicai p〇 Hshing (CMP)" method which involves the use of a combination of a polishing pad and a polishing slurry. The focus of all chemical mechanical polishing methods is to achieve a level of performance in areas such as the surface uniformity of the polished wafer, the smoothness of the IC circuit, the material removal rate that is highly correlated with the productivity of the wafer, and In terms of economic efficiency, the life of consumables used in the chemical mechanical polishing method, and the like. SUMMARY OF THE INVENTION The present invention provides a chemical mechanical polishing pad conditioner and a method of modifying and modifying the chemical mechanical polishing pad. In one aspect, the present invention provides, for example, a chemical mechanical polishing pad conditioner. Such a polishing pad conditioner can include a support matrix and a plurality of smooth superabrasive panicles disposed on the support substrate, the plurality of smooth superabrasive particles can be used to cut large on a polishing pad Large asperity; the polishing pad conditioner may also include a plurality of rough superabrasive particles disposed on the support substrate of 3 201143979 'The rough SUperabrasive particle may be used in the plural The Slurry channel is cut out on the rough portion, wherein the plurality of polishing liquid channels are in a chemical mechanical polishing process to promote the activity of the polishing liquid over the plurality of large roughness portions. Superabrasive particles of various configurations can be considered. In one aspect, for example, the cutting tips of the plurality of rough and smooth superabrasive particles are substantially flat and have a height of between about 1 and 10 microns. In another aspect, the plurality of smooth superabrasive particles are separated into one or more separate smooth superabrasive particles, and the plurality of coarse superabrasive particles are separated into one or more separate coarse superabrasive particle blocks. In a more specific aspect, the plurality of smooth superabrasive particle blocks and the plurality of rough superabrasive particle blocks are spaced apart j or the plurality of smooth superabrasive particles and the plurality of rough superabrasive particles are evenly spaced and staggered. On the support matrix. Any superabrasive material and material configuration that can be used to modify a chemical mechanical polishing pad is considered to be within the scope of the present invention. In one aspect, the plurality of smooth superabrasive particles are single crystal superabrasive particles. For example, the single crystal system may comprise materials such as diamond, cubic boron nitride, ceramics, and the like. In one aspect, the single crystal superabrasive particles are single crystal diamonds. In another aspect, the plurality of coarse-slit superabrasive particles are polycrystalline superabrasive particles. For example, the phylogenetic material may include materials such as diamond, cubic boron nitride (cBN), ceramics, and the like. In one aspect, the polycrystalline superabrasive particles are polycrystalline diamonds. In still another aspect, the plurality of thick chain superabrasive particles are single crystal superabrasive particles having a cracked tip, edge, face or a combination thereof. A variety of different support matrix materials are contemplated, and any material that can be intimately coupled to the superabrasive 4 201143979 particles is considered to be within the scope of the present invention. The matrix material can include, but is not limited to, braze metals, solid metals containing electroplated metals, organic materials, ceramics, and the like. In one aspect, the organic matrix material can include, but is not limited to, amino resins, acrylate resins, alkyd resins, polyester resins, and polystyrene. Polyamide resins, polyimide resins, polyurethane resins, phenolic resins, phenolic/latex resins, epoxy resins Epoxy resins), isocyanate resins, isocyanurate resins, p〇iySii〇xane resins, reactive vinyl resins Resins), polyethylene resins, polypropylene resins (p〇iypr0pyiene resins), polystyrene resins, phenoxy resins, perylene resins, poly Sulfone resin (a〇rysuif〇ne resins), aCry1〇nitrile butadiene styrene resins, acrylic resins Polycarbonate resins and combinations thereof In another aspect of the invention, a method of adjusting chemical mechanical polishing is provided. Such methods can include cutting a large roughness on a surface of a polishing pad with smooth superabrasive particles, and cutting a slurry channel on the large roughness of the polishing pad using rough superabrasive particles, wherein the plurality of abrasives The liquid channel promotes the activity of the polishing liquid throughout the plurality of large slits, and various techniques for chemical mechanical polishing, large slitting, and grinding of the liquid channel can be considered. In the aspect, for example, the method simultaneously cuts the plurality of large roughness portions with the chemical mechanical polishing pad conditioner of the same 201143979. In the other aspect, the method sequentially cuts the plurality of large slit portions and the plurality of slurry channels by different chemical polishing 塾 dressers. In another aspect of the invention, a chemical mechanical polishing pad is provided. The polishing crucible may include a chemical mechanical polishing pad material formed by cutting a plurality of large thick slit portions, and a plurality of polishing liquid channels formed by cutting the plurality of coarse portions, the plurality of polishing liquid channels being used for In the chemical mechanical polishing process, the activity of the polishing liquid is promoted throughout the plurality of large roughness portions. In a particular aspect, the chemical mechanical polishing pad material is a poreless chemical mechanical polishing pad material. The various features of the present invention are broadly described in order to provide a better understanding of the embodiments herein. Other features of the present invention will be apparent from the following description of the embodiments of the present invention and the appended claims. The particular structure, method steps or materials may be extended to equivalent forms as may be recognized by one of ordinary skill in the art. It is also understood that the terminology used herein is for the purpose of the description It must be noted that the singular forms "a", "the", "the" and "the" Things. Therefore, reference to "20113979" and s' mention of "apaniele" may include - or a plurality of the plural particles. Definitions In describing and claiming this (4), the following terms will be used in accordance with the definitions set forth below. As used herein, "Polishing 塾 Dresser (4) 显仙(10)(7)" does not significantly touch the liner in a chemical mechanical polishing 塾 dresser and is not sufficient to remove debris from the surface, deform the surface, and cut the surface from the surface. Super abrasive particles in the tank. As used herein, "substrate" or "suppcm substrate" refers to a portion of a polishing pad conditioner that supports an organic substrate that can be attached to the abrasive material and can carry abrasive The fragment base f of the material, the cutting element, the control element, and the like. The substrate used in the present invention can be of a variety of shapes, thicknesses or materials which can be used to carry the abrasive material in a manner sufficient for the polishing pad conditioner to achieve its intended purpose. The substrate may be a solid material, a powder material (solid after processing) or a flexible material. (7) Examples of Mibb matenaip typical substrates include, but are not limited to, metals, metal alloys, ceramics, corresponding polymers or other organic materials, glass. And mixtures or compositions thereof. As used herein, "abrading surface" or "abrading point" may be used to refer to a surface and edge of a cutting segment of a polishing segment that contacts a chemical mechanical polishing pad and a material removed from the chemical mechanical polishing pad. , face, point or tip. Generally, when the abrasive segment or cutting element is in contact with the chemical mechanical polishing pad, the abrasive surface or spot is the portion of the abrasive segment that is first contacted with the chemical mechanical polishing pad. 201143979 As used herein, "segment blank" refers to a structure similar to the substrate of a polishing pad conditioner as previously defined. A fragment matrix is used in the present invention to carry an abrasive layer: attaching the plurality of abrasive layers to the substrate of the polishing pad conditioner is typically by attaching the segment substrate to the substrate of the polishing pad conditioner, it is important to Note that various methods of attaching the plurality of fragments to the substrate and various methods of attaching the plurality of abrasive layers to the fragment matrix are discussed herein. It is to be understood that the various attachment mechanisms described herein can be used interchangeably. The attachment method discussed in the 'When discussing the method of attaching a segment substrate to a substrate' can also be used to attach the abrasive layer to a segment substrate. However, for any particular chemical mechanical polishing pad conditioner to be discussed, it is to be understood that the plurality of attachment methods for attaching the abrasive layer to the segment substrate can be used to attach the segment substrate to the polishing pad conditioner substrate. The attachment methods are different or the same. As used herein, "superhard" may be used to refer to any crystalline or polycrystalline material, or a mixture of such materials, having a Mohr, s hardness of approximately equal to or greater than 8. In some aspects, the Mohr's hardness is approximately equal to or greater than 9.5. Such materials include, but are not limited to, diamonds, polycrystalline diamonds (polycrystalline diamonds, η: η, & TM office.
硬材料的形式，諸如多晶鑽石 中’該型態包括顆粒、砂礫、膜、 本發明中所述的超硬材料為多晶超 晶鐵石或多晶立方氮化硼材料。 如本文中所使用，「有機材料（〇rganicmaterial)」係才丨 8 201143979 有機化合物的半固體或固體複合物或混合物 機材料層」和「有機材料基質」彳互換使用，ϋ指丄層： :團：：化合物的半固體或固體無晶型現合物，包括； 二、南分子、膠等。較佳的力’有機材料係由一或多個單 進灯之聚合反制形成的聚合物或共聚合物。在一 形中’這種有機材料可為黏著劑。 — 如本文中所使用，「硬焊仆 .^ ( Zlng)」的製程意係指在 超研磨顆粒/材料之碳原子以及硬焊材料之間化學鍵的產 生。再者，該「化學鍵」係指丘槽細 ， 」货知共價鍵，如碳化物、氮化物 或硼化物的鍵結’而非機械力或微弱的原子間吸引力。因 此，「硬焊」用於連接超研磨顆粒時，就會形成真實的丘 價鍵。然而，「硬焊」心金屬與金屬的鍵結時，該詞彙 即為-更傳統的意義-冶金的連接。因此，超研磨片段硬 焊於工具本體並不需要碳化物形成物的存在的出現。 如本文中所使用’「研磨層（ab⑴ivelayer)」係描述能 夠從化學機械抛光塾移除（如切割、拋光、到落卜以叮丨叫）） 的各種結構，一研磨層可包括其上或其内部具有許多切割 點、脊、平台的塊體。值得注意的是這種切割點、脊、平 台可形成有許多凸部或凹部而涵蓋在這塊體裡。再者，一 研磨層可包括複數個獨立的研磨顆粒，其僅具有形成在其 上或表面的一切割點、脊或平台。一研磨層也可包括複合 塊體，如PCD片、片段或基質（blank)，可個別包括研磨層 或共同包括研磨層。 如本文中所使用’ 「金屬的」係指任何種類的金屬、 金屬合金或其混合物，且特別包括但不限定於鋼、鐵以及 201143979 不錄鋼。 如本文中所使用，「材料特性（material characteristic)」 係指一化學機械拋光墊的物理且/或化學特性，其可包括諸 如分子結構、緊密度、柔軟度、孔洞密度等。 如本文中所使用，「切割元件」係指化學機械拋光墊 修整器中，一種可切削、磨蝕、移除的元件，或是一種可 辨識該化學機械拋光墊的材料以便對該化學機械拋光墊進 行調節或修飾的元件。切割元件能夠藉由點、邊緣、面或 任何可調節或修飾化學機械拋光墊的區塊而作用。應該考 慮的是切割元件係包括獨立的切割單元如鑽石粒子，以及 含有複數個内文中所提及之切割單元的片段基質。 如本文中所使用，用詞「實質上」係指某一作用、特 徵、性質、狀態、結構、物品或結果之完全或接近完全之 範圍或程度。任意舉一個例子來說’當兩個或多個以上的 物體被指出彼此之間間隔有一「實質上」一致的距離，則 可得知這兩個或多個以上的物體彼此間隔有完全不可改變 的距離，或者彼此之間有著非常接近不可改變的距離，而 一般人無法察知其分別。與絕對完全性之確切可容許的偏 差度可在一些情況下視特定情形而定。然而，一般而言， 完成之接近錢具有的總結果與達成絕對及完全的完^時 相同β 當用於否定含義時，「奢哲！^ #J. 貫質上」之使用同樣適用於指完 全或接近完全地缺乏某一作用、特徵、性質、狀態、結構、 物品或結果。S意舉一例子還說，_個「實質上沒 來物質的凹洞可為完全沒有外來物質，或非常接近完全沒 10 201143979 有外來物質，而其影響會如同完全缺乏外來物質一樣。換 句話說，一「實質上沒有」外來物質的凹洞只要結果在孔 洞/又有可測里的影響，則實際上依然包含微小部分的外來 物質。 如本文中所使用，為方便起見，可將複數個物品、結 構元件、組成元件及/或材料呈現於共同清單中◦然而，此 等清單應被理解為好似該清單之每一成員經個別識別為個 則該清單中之個 現而理解為同一 別及唯一之成員。因此，若無相反指示 別成員均不應僅僅基於其在共同組中之 清單中之任何其他成員的實際等效形式。 濃度、量、粒徑大小、體積及其他數值資料在本文中 可以範圍格式表示或呈現。應瞭解，該種範圍格式僅為方 便及簡單起見而使用，且因此應靈活地解釋為不但包括明 確在該範圍界限内所列之數值’而且包括涵蓋於彼範圍内 之所有個別數值或子範圍，就如同明確列出每一數值及子 範圍般。 舉例而言，「約1毫米至約5毫米（about 1 miCr〇meter to about 5 micrometers )」之數值範圍應解釋為不但包括約i 至約5之明確所列值，而且包括所指範圍内之個別值及子 範圍。因此’在此數值範圍内包括諸如2、3及4之個別值 以及諸如1至3、2至4及3至5等之子範圍，以及個別之 1、2、3、4及5。所述之此原理同樣適用於僅列出一個數 值（如最小值或最大值）之範圍。此外，該種解釋應不管 範圍之寬度或所描述之特徵如何而均應用。 本發明 201143979 本發明大體而言係提供一拋光墊修整器以及相關方 法’以用來修整（conditioning^如整平（smoothing)、拋光 (polishing)、修飾（dressing))或其他影響一化學機械拋光墊 以將材料自該化學機械拋光墊移除，而提供抛光墊具有一 光滑、平整和/或平坦的表面。本發明之拋光墊修整器係有 助於如修整用於拋光、磨光或其他影響矽晶圓的化學機械 拋光墊。 現已發現增進化學機械拋光塾的修整能藉由促進研磨 液的活動遍及於拋光墊之粗糙部而增進製程效果。藉由使 用一包含具有平滑表面的超研磨粒子以及具有粗糙表面的 超研磨粒子的化學機械拋光墊修整器可達成上述目的。由 於平滑超研磨粒子通常不具有尖銳的切割區域，因而傾向 在刺穿拋光墊之前，在拋光墊上產生明顯的彈性及塑性變 形。因此’平滑超研磨粒子藉由在拋光墊的表面產生大的 粗链部，以使該化學機械拋光墊變得粗糙。 另一方面，粗糙超研磨粒子則具有尖銳的切割區域（如 尖端、邊緣、以及/或面），其可對該化學機械拋光墊進行切 割，並且相較於平滑超研磨粒子而言，可產生較少的變形。 尖銳的切割區域可以包括，但不限於’破裂單晶粒子或具 有許多鋒利的晶體的多晶粒子。這些粗縫超研磨粒子係在 修整拋光墊期間用以自該拋光墊的表面移除釉料（gUze)。此 外’粗縫超研磨粒子係於該拋光墊的表面沿著粗糙部切割 小的研磨液渠道。於化學機械拋光過程中，由於該接觸壓 力係施加於粗縫部及工作物件之間，因此研磨液會累積在 粗糙部之間的凹處而非粗糙部的高處，大部分化學機械拋 12 201143979 光係發生在粗縫部的尚處，且因此研磨液與槪光後的工作 物件之間通常沒有適當的接觸。此類情況對於使用研磨液 以對諸如銅（copper)等材料產生氧化反應的拋光製程而 言’會是特別需要注意的問題。由於較少研磨液接觸工作 物件’而產生較少的氧化反應，因此粗糙部中的研磨液渠 道可促進研磨液流出粗糙部之間的凹處並且遍及於粗縫 部。因此，在化學機械拋光的操作過程中，有較高比例的 研磨液存在於粗糙部中。 可藉由利用平滑及粗糙超研磨粒子的各種技術修整化 學機械拋光墊。舉例而言，在一方面可以藉由先使用具有 一種形式之超研磨粒子的修整器對該化學機械拋光墊進行 修飾’而後再使用具有另一種形式之超研磨粒子的修整器 對該化學機械拋光墊進行修飾，舉例而言，可使用具有平 滑超研磨粒子的修整器對該化學機械拋光墊進行修飾，而 後使用具有粗糙超研磨粒子的修整器對該化學機械拋光墊 進行修飾。在另一方面中，一化學機械拋光墊修整器可兼 具有平滑及粗糙超研磨粒子以同時修整化學機械拋光墊。 一個化學機械拋光墊修整器可透過各種方式包含有該 複數平滑及粗糙超研磨粒子。一般而言，一化學機械拋光 塾修整器具有一支撐基材（support substrate)，該複數超研磨 粒子藉由使用一支撐基質（support matrix)而結合於該支撐 基材上。在某些情形下，該支撐基材可以由該支撐基質所 構成。在一些方面中，該超研磨粒子直接設置於該支撐基 質中；在另一些方面中，該複數超研磨粒子可結合於一片 段基質（segment blank)，而後該片段基質設置於該支撐基質 13 201143979 中。後者可使得超研磨粒子的較小片段被建構出而後合併 於該化學機械拋光墊修整器中。 影響建構化學機械拋光墊修整器的一個因素係為遍及 於a亥修整器之表面的超研磨粒子之間相對的整平效果。散 佈於一修整器中各處的該複數超研磨粒子的尖端可形成各 種外型或輪廓，例如，其外型可為一平坦的輪廓，而該複 數超研磨粒子的尖端係沿著一平面整平。該複數尖端可沿 著一斜率或一曲率設置。由於該複數尖端均位於一預定的 輪廓，此種設置仍可被認為是「整平」。粒子的尖端的位 置低於或同於此預定輪廓則不會達到整平效果。位置太低 的粒子無法接觸拋光墊並以足夠的壓力對拋光墊進行修 整，而位置太高的粒子則會於拋光墊上切割出相當大且可 月b會對工作物件造成破壞的粗糙。除此之外，位置高於該 輪廓相當多的粒子可能會受到來自該化學機械拋光塾的相 當明顯的拖拉力道’並且可能被拉離該修整器。當此情況 發生時’自修整器上脫離的粒子可對工作物件造成破壞。 除了增加切割效率及降低毀損工作物件的風險之外， 經過整平之粒子的尖端可在拋光墊上的粗糙部中適當地切 割出研磨液渠道’舉例而言，位置低於該輪廟的粗链超研 磨粒子可能無法於該複數粗糙部的高處切割出渠道，而潛 在地限制了研磨液在工作物件及該複數粗糙部之間的活 動°位置Γ%於該輪廟的粗糙粒子則可能會過度切割該複數 粗链部’此過度切割的狀況限制了由平滑超研磨粒子切割 的粗糙部所產生的益處。 然而，製造-具有經過整平之尖端的修整器是有許多 14 201143979 問題仍需克服的，尤其是使用現有之超研磨工具的技術。 舉例而言’傳統的硬焊金屬支撐基質工具係將超研磨粒子 嵌入-生胚狀態的硬焊金屬的前趨物中。該硬谭合金進行 炼化並接著冷卻以固定超研磨粒子。即使假定該複數超研 磨粒子的尖端於該硬焊金屬溶融之前已被整平，但冷卻的 過程會導致該支標基材變形，因而使得該複數尖端被拉離 原先整平的排列之外。 可考慮各種用來對一化學機械拋光墊修整器的超研磨 尖端進行整平的各種技術，且任何可供用以在一修整器中 產生整平的尖端應被認為是本發明的範嗜。在一方面中， 舉例而言，該支撐基質可為一有機材料。有機材料可於一 溫度下被硬化，該溫度不會導致該支撐基材產生變形，而 於硬化之刚已經過整平的粒子尖端在硬化後仍可維持整平 的狀態。然而，由於相較於硬焊金属而言，超研磨粒子與 有機基質材料之間的結合較為微弱許多，因此使用有機基 質材料可能會產生一些問題。為了解決前述之結合力薄弱 的問題’本發明人已發現可藉由配置該複數超研磨粒子以 令機械壓力或摩擦力平均分佈於有機基質中所有的超研磨 粒子，進而使超研磨粒子充分保持在該有機基質中。 因此，該複數平滑及粗糙超研磨粒子可以直接設至於 二有機基質中’或者可結合於—片段基質且該片段基質可 ^於該有機基質中。超研磨粒子可利用—有機材料、— 更焊金屬、一陶瓷材料及電鍍技術等而與該複數片段基質 相接。由於相較於整個化學機械拋光塾修整器的表面而 '，超研磨粒子在-小塊面積中能夠更容易地達到整平， 15 201143979 因此。亥複數片#又基質可以是有用的。例如，以硬焊金屬來 說’於冷卻過程中，因為一片段基質的表面積係小於該支 撐基材的表面積’而使得片段基質的變形程度能夠大幅減 ;。因此，該整平結構在該片段基質的硬焊過程可持續維 持’而後該複數片段基質則可結合於該支撐基材的表面。 若一硬焊金屬用於將該片段基質緊密連接於該支撐基材， 該支撐基材則會藉由該片段基質的剛性增加而降低變形程 度。藉此，超研磨粒子可利用一有機材料、一硬焊金屬、 一陶瓷材料及電鍍技術等而與該複數片段基質緊密相接。 使用片段基質的其他好處包括能夠依照指定規格將該 研磨層附著於該片段基質的方法，係獨立於將該片段基質 或該複數基質附著於該拋光墊修整器基材的方法。舉例而 言，當所試圖使用的拋光墊修整器具有大的或複雜的表面 積時，而各種附著方法可能涉及很高的溫度和/或壓力、很 问要求的環境條件、或單純要求高密集勞力，以明顯、簡 單刼作的片段基質執行該附著方法能改善附著程序的成 本、效能以及完整性；另外，若將片段基質分離而呈相對 小的部份，則能更容易將各片段基質上之研磨層的構成物 整平’所產生的複數研磨片段也同樣地更容易在研磨層個 別附著於各研磨片段後，於該拋光墊修整器基材之面上被 定位、整平、形成間隔、定向等。 除此之外，藉由獲得複數個研磨片段，各具有複數個 具有不同構型的超研磨粒子已附著於其上，該拋光墊修整 器基材的面上之一研磨圖案係被設計為能最有效地進行各 種修整程序。例如，在鄰近的研磨片段之間之間隔能謹慎 16 201143979 地選擇而有助於或更能控制各種流體（如研磨液）在該複數 研磨片段周圍或穿過該複數研磨片段的流動，以增加材料 移除製程的效率及效能。而且，如第一圖所示，具有不同 研磨輪廟（如不同尺寸、形狀、研磨侵人等）的片段基質能 用於單一基材上，以能夠客製化該拋光墊修整器之磨蝕 輪摩的整體。 該複數粗糙及平滑超研磨粒子可依據該化學機械拋光 塾及經過處理<工作物件的特性而被整平成各種角度，當 該複數超研磨粒子之切割尖端的位置係沿著一特定輪廓 (可能為平面或非平面），整平的效果係與該輪廓的偏差程 度有關在方面中，舉例而言，該複數個粗糙超研磨粒 子及該複數個平滑超研磨粒子實質上係經過整平且高度範 圍介於大約丨微米至大約10微米。在另一方面中，該複數 個粗链超研磨粒子及該複數個平滑超研磨粒子實質上係經 過整平且高度範圍介於大約2微米至大約3微米。 基質上或是連結 不論超研磨粒子係直接設置於該支標 於片段基質’各種配置均可考唐。阳苗+二、 庄可愿。配置方式可依據所欲採 取的拋光墊修整方式而有所不同， π吓个M 且因此如下所述的設置 方式應不被視為是本發明的限制。舉例而言，在一方面中， 平滑超研磨粒子係分成一個或多個八 又夕個73離的平滑超研磨粒子 區塊，且該複數粗糙超研磨敖早在八 π傲祖千係分成一個或多個分離的 粗糙超研磨粒子區域。該複數戸试 後致&域可為以特定型態的超研 磨粒子直接設置於該支撐基皙卜姓6 丞買上特疋位置的區域，或者該 複數區域可建立片段基質， 埋於該片段基質上。在一方 並使單一型態之超研磨粒子嵌 面中，如圖1所示，該複數分 17 201143979 離的平滑超研磨粒子區塊12以及該複數分離的粗糙超研磨 粒子區塊14係間隔排列地設置於該支撐基材16上。在另 一方面中，該複數個平滑超研磨粒子及該複數粗糙超研磨 粒子係均勻間隔式交錯散佈於該支撐基質（圖中未示可 透過將兩種型態的超研磨粒子直接且分別均勻間隔式交錯 散佈於該支撐基質令，或者將兩種型態的超研磨粒子混合 散佈於一片段基質上。 該化學機械拋光墊修整器亦可包含多個環狀的超研肩 粒子區塊，相對於如圖1所示的單環結構。再者，鹿注遺 的是區塊或片段也能包括聚集複數個具有一個或多個區相 或片段之圖案的排列。 這些技術能夠用來修飾各種化學機械拋光墊材料，金 對無孔化學機械拋光墊材料的修飾特別有利。由於無孔七 學機械拋光墊缺乏孔洞以含有或抓持該研磨液因而無3 有效地抓持及移動研磨液。因此，對於此類材料而古，职 於以粗糙部之間的縫隙容納研磨液的問題將更加惡化。袭 由在拋光墊表面切割研磨液渠道，可促進粗糙部中的研崖 液與工作物件之間的活動，因而增加無孔材料的效益。驾 複數平滑超研磨粒子可對此類拋光墊進行粗糙化，且粗相 超研磨粒子則能夠切割研磨液渠道以便使研磨液能夠以毛 細現象在抛光塾的表面移動。 根據本發明之一些方面中，本發明的方法亦可用來修 飾經過含浸處理之拋光墊，諸如經含浸石墨之拋光墊。其 他更多關於此類拋光墊的資訊可參考於2〇 、 、ζυυ/年7月ό日提 出申請之美國專利案第7,494,4G4號以及於扇9年2月 18 201143979 日提出中w之美國專利申請案第i2/389,922號，其係能合 併於本案作為參考。 可考慮各種材料用來作為粗縫及平滑超研磨粒子的材 質。任何已知可使用於一化學機械抛光塾修整器中的超研 磨粒子均應被認為是本發明的範疇。此類材料非限定的例 :包括鑽石材料'氮化物材料、陶瓷等。在一方面中，該 複數超研磨粒子可包含有鑽石材料。此類鑽石材料可包括 天然與人工合成的鑽石、單晶體、多晶體等。在另一方面 中，該複數超研磨粒子包括立方氮化碥材料。 在一方面中，該複數平滑超研磨粒子係為單晶超研磨 粒子。在-特定方面中’該單晶超研磨粒子係可為鑽石。 由於自形（euhedral)鑽石晶體藉由（1〇〇)、（1!丨）、（ι 1〇)及其 他面所形成的晶角而使其具有鈍角端。此類鑽石材料可用 來作為平滑超研磨粒子以於該化學機械拋光》中形成大的 粗糙部，亦可將平滑超研磨粒子視為變形的超研磨粒子。 在另一方面中，粗糙超研磨粒子係可為具有破裂之尖 端、邊緣、面或其組合的單晶超研磨粒子，該複數破裂之 4刀可旎呈尖銳狀，以於該拋光墊材料上切割出研磨液渠 道。又另一方面中，該複數粗糙超研磨粒子係為多晶超研 磨粒子。多晶材料在粒子表面具有多個較小的晶體，其可 有效地在該拋光墊上切割研磨液渠道，以及促進釉料及其 他碎片的移除。在一特定的方面巾’該複數多晶超研磨粒 子係為多晶鑽石。亦可將粗糙超研磨粒子視為銳利的超研 磨粒子。 在一方面中，可藉由一粒子在切割行為發生前壓入該 201143979 化學機械拋光墊的距離而區別出該複數平滑超研磨粒子。 在一方面中，舉例而言，一平滑超研磨粒子於切割行為發 生前，係對一化學機械拋光墊中壓入至少15微米的深度； 在另一方面中，一平滑超研磨粒子於切割行為發生前，係 對一化學機械拋光墊中壓入至少20微米的距離。同樣地， 可藉由一粒子在切割行為發生前壓入該化學機械拋光墊的 距離而區別出粗糙超研磨粒子。在一方面中，舉例而言， 當一粗糙超研磨粒子對一化學機械拋光墊中壓入小於或等 於大約ίο微米的距離時，始發生切割行為；在另一方面中， 當一粗糙超研磨粒子對一化學機械拋光墊中壓入小於或等 於大約5微米的距離時，始發生切割行為。 該化學機械拋光墊修整器之基材可依照設計之拋光墊 修整器的應用而有所不$，但在—方面中係包括—支樓基 質固定於其上之面，以提供該拋光墊修整器可用於研磨^ 切割或其他將材料從一化學機械拋光墊移除材料的面。在 一方面中，該修整器或支撐基材可為不錢鋼；在另一方面 中’該支標基材可為-般鋼材。若使用一般鋼材，在固定 該複數超研磨粒子的程序之後，接著對工作表面進行電鍍 該複數’以使得該修整器具有耐酸性的性質，此為有益： 做法。 在本發明中所使用額外且多樣之研磨片段亦被考量， 例如，在使用上而考量各種切割元件/研磨片段的使用能祥 細地參考於2006年2月17日提出申請之美國申請案第 11/357,713號’其係能合併於本案作為參考。除此之外，可 使用陶瓷材料元件（如同該片段基質和/或研磨層任一或二 20 201143979 者）、電鍍技術等形成該複數研磨片段。 在此所顯示及討論的各種片段基質能以各種材料所製 成，包括但不限制在金屬材料（如鋁、銅、鋼、金屬合金等）、 陶瓷材料、玻璃、高分子、複合材料等。一般而言，實際 上任何能讓研磨片段附著的材料就能夠使用。 可考慮使用各種有機材料作為一有機基質以及/或用來 將超研磨粒子緊密連結一至該片段基質。適合之有機材料 的範例包括但不限制在胺基樹脂、丙烯酸酯樹脂、醇酸樹 脂、聚酯樹脂、聚醯胺樹脂、聚亞醯胺樹脂、聚氨酯樹脂、 酚醛樹脂、酚醛/乳膠樹脂、環氧樹脂、異氰酸酯樹脂、異 氰尿酸酯樹脂、聚矽氧烷樹脂、反應型乙烯基樹脂、聚乙 烯樹脂、聚丙烯樹脂、聚苯乙烯樹脂、苯氧樹脂、二萘嵌 苯樹脂、聚砜樹脂、丙烯腈-丁二烯-苯乙烯共聚物、丙烯酸 柄月a、聚碳酸酯樹脂及其混合物。在一特定方面中，該有 機基質材料可為環氧樹脂。在另一方面中，該有機基質材 料可為聚亞醯胺樹脂。又另一方面中，該有機基質材料為 聚氨酯樹脂。 所5胃的「逆澆铸（reverse casting)」法能夠用於準確且 可控制地將該研磨材料定向及附著在該片段基質上，並且 將該片段基質定位和附著於該拋光墊修整器的支撐基材， 此類方法包括首先使用一「光罩」材料固定一超研磨材料 (如複數超研磨粒子或一片段基質）至一基材上，接著部分 突出於光罩材料的顆粒使用在此所討論過的方法附著於該 &光塾修整器基材，在此之後或在此期間能移除該光罩材 料。 21 201143979 適合的逆澆注法能夠在本案發明人的各種專利及專利 申請案中找到，包括在2007年12月6曰申請的美國申請 案第60/992,966號、在2007年5月16曰申請的美國申請 案第1 1/804,221號' 以及在2007年5月22日申請的美國 申請案第1 1/805,549號，其皆可合併於此作為參考，這些 技術亦可在將本發明該複數研磨片段附著於拋光墊修整器 的支樓基材時以及在將本發明該複數超研磨粒子附著於該 複數片段基質時使用。此類技術可提供非常準確地控制該 複數研磨片段或超研磨粒子的橫向設置，也能非常準確地 控制該複數研磨片段或超研磨粒子的相對高度。 s使用一有機結合材料層時，於所屬技術領域中具有 通常知識者能夠知道各種硬化該有機材料層的方法，以使 有機材料產生相變化而從至少一柔軟的狀態到至少一堅硬 的狀態’硬化能夠藉由但不限制在將該有機材料接觸熱形 式的能量、電磁輻射（如紫外線、紅外線以及微波幅射）、 粒子撞擊（如電子束）、有機觸媒、無機觸媒或其他於所屬 技術領域中具有通常知識者所熟知的硬化技術。 在本發明的一方面中，該有機材料可以是_熱塑性材 料’熱塑性材料能可逆地分別藉由冷卻和加熱而硬化或軟 化；在另一方面中’該有機材料層可為熱固性材料，熱固 性材料無法像熱塑性材料一樣可逆地硬化和軟化；換句話 說’一旦產生硬化現象，該製程實質上為不可逆。 至於上述有機材料更為細郎的部份如下所列，在本發 明之實施例中有用的有機材料係包括但不限制在：胺基樹 月曰’其包含有烧基化腺链樹脂（alkylated urea-formaldehyde 22 201143979 resins)、三聚氰胺曱搭樹脂（melamine-formaldehyde resins) 以及烷基化苯代三聚氰胺甲醛樹脂（alkylated benzoguanamine-formaldehyde resins)；丙稀酉曼醋樹月旨 (acrylate resins)，其包含有乙稀丙烯酸醋（vinyl acrylates)、 環氧丙稀酸S旨（aery 1 ated epoxies)、聚氨S旨丙稀酸酉旨 (acrylated urethanes)、聚醋丙烯酸醋（acrylated polyesters)、 丙稀酸丙烯酸醋（acrylated acrylics)、聚醚丙烯酸醋 (acrylated polyethers)乙烯醚（vinyl ethers)、丙稀酸油 (acrylated oils)、石夕酮丙稀酸醋（acrylated silicons)以及相關 的曱基丙稀酸醋（methacrylates);醇酸樹脂（alkyd resins)， 如聚氨酯酸醇樹脂（urethane alkyd resins);聚醋樹脂 (polyester resins);聚酿胺樹脂（polyamide resins);聚亞酿 胺樹脂（polyimide resins);反應型氨酯樹脂（reactive urethane resins);聚氨S旨樹脂（polyurethane resins);酌搭樹 脂（phenolic resins)，如紛少路多的龄酸樹脂（resole resins) 以及盼多链少的紛链樹脂（novolac resins);紛链/乳膠樹脂 (phenolic/latex resins);環氧樹脂（epoxy resins)，如二紛環 氧樹脂（bisphenol epoxy resins);異氰酸酯樹脂（isocyanate resins);異氰尿酸酯樹脂（isocyanurate resins);聚石夕氧院樹 脂（polysiloxane resins)，其包含烧基烧氧基石夕樹脂 (alkylalkoxysilane resins);反應型乙稀基樹脂（reactive vinyl resins);標有BakeliteTM商標的樹脂，其包含聚乙烯樹脂 (polyethylene resins)、聚丙稀樹脂（polypropylene resins)、 環氧樹脂（epoxy resins)、紛搭樹脂（phenolic resins)、聚苯 乙稀樹脂（polystyrene resins)、苯氧樹脂（phenoxy resins)、 23 201143979 二萘嵌苯樹脂（perylene resins)、聚颯樹脂（polysulf〇ne resins)、氣乙烯共聚合物樹脂（ethylene c〇p〇lymer resins)、 丙稀腈-丁二烯-苯乙烯共聚物 (acrylonitrile-butadiene-styrene resins，ABS)、乙稀基樹脂 (vinyl resins);丙烯酸樹脂（acrylic resins);聚碳酸酯樹脂 (polycarbonate resins)以及其混合物或組合物。在本發明之 一方面中’該有機材料可為環氧樹脂；在另一方面中，該 有機材料可為聚亞醯胺樹脂；又另一方面中，該有機材料 可為聚氨酯樹脂。 很多添加物能包含在該有機材料中以幫助其使用。例 如，能使用額外的交聯劑以及填充劑以促進該有機材料層 硬化的特性。除此之外，可使用溶劑以轉變該有機材料在 未硬化狀態的特性，也能配置一強化材料於至少部份的硬 化之有機材料層中。這種強化材料可用於增加該有機材料 層的強度，且因此更促進各別研磨片段的保持度；在一方 面中，該強化材料可包括陶瓷、金屬或其組合物，陶瓷的 範例包括氧化鋁、碳化鋁、二氧化矽、碳化矽、氧化锆、 碳化鍅及其混合物。 除此之外，在一方面中，可將耦合劑或有機金屬化合 物塗佈於各研磨材料的表面上，以透過化學鍵結而幫助該 超研磨材料保持在該有機材料層中。於所屬技術領域中具 有通常知識者能知道且能使用各種有機和有機金屬化合 物。有機金屬_合劑能在該超研磨材料以及該有機材料基 質之間產生化學鍵’故而增加該金屬材料在其中的保持 度。如此’該有機金屬耦合劑能作為一橋樑而在該有機材 24 201143979 料基質及該超研磨材料表面之間形成鍵結。在本發明之一 方面中乂有機金屬輕合劑為鈦酸S旨（titanate)、錯酸醋 (zirconate)、矽曱烷或其混合物。所用之有機金屬偶合劑的 量係依照耦合劑的種類以及該超研磨材料的表面積而定， 通常必須是該有機材料層之重量的〇.〇5%至1〇%才會足夠。 適合用於本發明之矽曱烷特定但非限制的範例包括3_ 甲基三乙醯氧基矽曱烷〔3_glycid〇xypr〇pyltrimeth〇xy silane，購自道康寧公司（D〇w c〇rning),型號為ζ·6〇4〇〕、 r-曱基丙烯醯氧基丙基三曱氧基矽甲烷〔T_methacryl〇xy propyltrimethoxy Silane，購自聯合碳化公司（Uni〇n carbide Chemicals Company)，型號為 A-174〕、冷-(3，4-環氧環己烧）In the form of a hard material, such as a polycrystalline diamond, the pattern comprises particles, grit, film, and the superhard material described in the present invention is a polycrystalline superlite or a polycrystalline cubic boron nitride material. As used herein, "organic material (〇rganicmaterial)" is used in conjunction with the "organic compound semi-solid or solid composite or mixture material layer" and "organic material matrix", which refers to the layer: Group:: Semi-solid or solid amorphous form of the compound, including; Second, South molecule, glue and the like. A preferred force' organic material is a polymer or copolymer formed by the polymerization of one or more single lamps. In the form, the organic material can be an adhesive. — As used herein, the term “hard soldering.” (Zlng) is intended to mean the production of chemical bonds between the carbon atoms of the superabrasive particles/material and the brazing material. Furthermore, the "chemical bond" refers to a fine groove, "a covalent bond such as a bond of carbide, nitride or boride" rather than a mechanical force or a weak interatomic attraction. Therefore, when “hard soldering” is used to connect the superabrasive particles, a true mound bond is formed. However, when "hard-welding" the bond between a metal and a metal, the term is a more traditional meaning-metallurgical connection. Therefore, the superabrasive segment is hard soldered to the tool body without the presence of the presence of carbide formers. As used herein, 'abs ive layer' describes various structures that can be removed from a chemical mechanical polishing crucible (eg, cut, polished, to squeak), an abrasive layer can be included thereon or It has many blocks of cutting points, ridges and platforms inside. It is worth noting that such cutting points, ridges, and platforms can be formed with a plurality of protrusions or recesses to cover the body. Further, an abrasive layer can include a plurality of individual abrasive particles having only one cutting point, ridge or platform formed thereon or on the surface. An abrasive layer may also comprise a composite block, such as a PCD sheet, segment or blank, which may individually comprise an abrasive layer or a collectively comprising an abrasive layer. As used herein, "metal" refers to any type of metal, metal alloy, or mixture thereof, and particularly includes, but is not limited to, steel, iron, and 201143979. As used herein, "material characteristic" refers to the physical and/or chemical properties of a chemical mechanical polishing pad, which may include, for example, molecular structure, compactness, softness, pore density, and the like. As used herein, "cutting element" means a chemical mechanical polishing pad conditioner, a formable, abrasive, removable component, or a material that identifies the chemical mechanical polishing pad to facilitate the chemical mechanical polishing pad. A component that is adjusted or modified. The cutting element can be acted upon by a point, edge, face or any block that can adjust or modify the chemical mechanical polishing pad. It should be considered that the cutting element comprises separate cutting units such as diamond particles, and a fragment matrix comprising a plurality of cutting units mentioned in the text. As used herein, the term "substantially" means the complete or near complete scope or extent of an action, feature, property, state, structure, article, or result. As an example, when two or more objects are pointed out that there is a "substantially" consistent distance between each other, it can be known that the two or more objects are completely unchangeable from each other. The distance, or the distance between them is very close to the immutable distance, and the average person can't detect the difference. The exact allowable degree of deviation from absolute completeness may in some cases be determined by the particular situation. However, in general, the total result of the completion of the close to the money is the same as the absolute and complete completion of the β. When used to negate the meaning, the use of “luxury!^ #J. 质质” applies equally to Completely or nearly completely lacking an action, feature, property, state, structure, item, or result. S intended to give an example, saying that _ a "substantially no material hole" can be completely free of foreign matter, or very close to completely no 2011 2011979, there are foreign substances, and its impact will be like the complete lack of foreign matter. In other words, a hole that is "substantially free of" foreign matter actually contains a small amount of foreign matter as long as the result is in the hole/measured. As used herein, a plurality of items, structural elements, component elements, and/or materials may be presented in a common list for convenience. However, such lists should be understood as if each member of the list is individually Recognized as one, the list is now understood to be the same and the only member. Therefore, no member should be based solely on the actual equivalent of any other member of the list in the common group. Concentration, amount, particle size, volume, and other numerical data may be represented or presented in a range format herein. It is to be understood that the scope of the range is used for convenience and simplicity, and therefore should be construed as being inclusively construed to include not only the <Desc/Clms Page number> The scope is as clear as each value and sub-range. For example, the range of values "about 1 miCr〇meter to about 5 micrometers" should be interpreted to include not only the values explicitly listed from i to about 5 but also within the stated range. Individual values and sub-ranges. Therefore, individual values such as 2, 3, and 4 and sub-ranges such as 1 to 3, 2 to 4, and 3 to 5, and individual 1, 2, 3, 4, and 5 are included in this numerical range. The same principle applies to the range in which only one value (such as the minimum or maximum value) is listed. In addition, this interpretation should be applied regardless of the breadth of the range or the characteristics described. The present invention is generally directed to a polishing pad conditioner and related methods for conditioning (such as smoothing, polishing, dressing) or other effects of a chemical mechanical polishing. A pad to remove material from the chemical mechanical polishing pad provides the polishing pad with a smooth, flat and/or flat surface. The polishing pad conditioner of the present invention facilitates, for example, trimming of chemical mechanical polishing pads used for polishing, polishing or otherwise affecting wafers. Improvements in the chemical mechanical polishing enamel have been found to enhance process performance by facilitating the activity of the polishing fluid throughout the roughness of the polishing pad. This can be achieved by using a chemical mechanical polishing pad conditioner comprising superabrasive particles having a smooth surface and superabrasive particles having a rough surface. Since smooth superabrasive particles generally do not have sharp cutting regions, they tend to produce significant elastic and plastic deformation on the polishing pad prior to piercing the polishing pad. Therefore, the smooth superabrasive particles roughen the chemical mechanical polishing pad by generating a large thick chain portion on the surface of the polishing pad. Rough superabrasive particles, on the other hand, have sharply cut regions (such as tips, edges, and/or faces) that can be cut by the chemical mechanical polishing pad and can be produced as compared to smooth superabrasive particles. Less deformation. Sharply cut regions may include, but are not limited to, 'broken single crystal particles or multi-grained particles having many sharp crystals. These coarse-slit superabrasive particles are used to remove the glaze (gUze) from the surface of the polishing pad during dressing of the polishing pad. In addition, the coarse-grained superabrasive particles are cut on the surface of the polishing pad along the roughness to cut a small slurry channel. In the chemical mechanical polishing process, since the contact pressure is applied between the rough portion and the working object, the polishing liquid will accumulate in the concave portion between the rough portions instead of the high portion of the rough portion, and most of the chemical mechanical polishing 12 201143979 The light system occurs at the sag, and therefore there is usually no proper contact between the slurry and the glazed work article. Such a situation would be a particular concern for the polishing process using a slurry to oxidize a material such as copper. The slurry channel in the roughened portion promotes the outflow of the slurry out of the roughness and over the crevices due to less oxidation of the slurry to the workpiece. Therefore, during the chemical mechanical polishing operation, a higher proportion of the slurry is present in the roughness. Chemical mechanical polishing pads can be tailored by a variety of techniques that utilize smooth and rough superabrasive particles. For example, in one aspect, the chemical mechanical polishing pad can be modified by first using a dresser having one form of superabrasive particles, and then the chemical mechanical polishing is performed using a dresser having another form of superabrasive particles. The pad is modified, for example, by modifying the chemical mechanical polishing pad with a dresser having smooth superabrasive particles, and then modifying the chemical mechanical polishing pad using a dresser having rough superabrasive particles. In another aspect, a chemical mechanical polishing pad conditioner can combine both smooth and rough superabrasive particles to simultaneously trim a chemical mechanical polishing pad. A chemical mechanical polishing pad conditioner can contain the plurality of smooth and rough superabrasive particles in a variety of ways. In general, a chemical mechanical polishing 塾 conditioner has a support substrate that is bonded to the support substrate by using a support matrix. In some cases, the support substrate can be composed of the support substrate. In some aspects, the superabrasive particles are disposed directly in the support matrix; in other aspects, the plurality of superabrasive particles can be bonded to a segment blank, and then the segment substrate is disposed on the support matrix 13 201143979 in. The latter allows smaller fragments of superabrasive particles to be constructed and then incorporated into the chemical mechanical polishing pad conditioner. One factor affecting the construction of the chemical mechanical polishing pad conditioner is the relative leveling effect between the superabrasive particles throughout the surface of the a-hai finisher. The tips of the plurality of superabrasive particles dispersed throughout a dresser can form various shapes or contours, for example, the shape can be a flat profile, and the tips of the plurality of superabrasive particles are along a plane level. The complex tip can be placed along a slope or a curvature. Since the complex tips are all located at a predetermined contour, such an arrangement can still be considered "flattened". The position of the tip of the particle is lower than or equal to the predetermined contour and the leveling effect is not achieved. Particles that are too low in position can't touch the polishing pad and trim the polishing pad with sufficient pressure, while particles that are too high will cut a large amount of roughness on the polishing pad that can cause damage to the workpiece. In addition, particles having a position that is relatively higher than the profile may be subjected to a relatively significant drag force from the chemical mechanical polishing ’ and may be pulled away from the dresser. When this happens, the particles that are detached from the self-dressing unit can cause damage to the work item. In addition to increasing cutting efficiency and reducing the risk of damaging work items, the tip of the leveled particles can properly cut the slurry channel in the roughness on the polishing pad'. For example, the position is lower than the thick chain of the temple. Superabrasive particles may not be able to cut the channel at the height of the complex roughness, potentially limiting the activity of the slurry between the workpiece and the complex roughness. 粗糙% of the coarse particles of the temple may Excessive cutting of the plurality of thick links 'This overcut condition limits the benefits of the rough cut by the smooth superabrasive particles. However, there are many problems with the manufacture of trimmers that have been leveled. 14 201143979 The problem still needs to be overcome, especially with existing superabrasive tools. For example, a conventional braze metal support matrix tool embeds superabrasive particles into the precursor of a brazing metal in a green state. The hard tan alloy is refined and then cooled to fix the superabrasive particles. Even if it is assumed that the tip of the plurality of superabrasive particles has been leveled before the brazing metal melts, the cooling process causes the rod substrate to deform, thereby causing the plurality of tips to be pulled away from the original leveling arrangement. Various techniques for leveling the superabrasive tip of a chemical mechanical pad conditioner can be considered, and any tip that can be used to create a leveling in a dresser should be considered a fan of the present invention. In one aspect, for example, the support matrix can be an organic material. The organic material can be hardened at a temperature that does not cause deformation of the support substrate, and the tip of the particle that has just been leveled after hardening can maintain a flattened state after hardening. However, since the bonding between the superabrasive particles and the organic matrix material is much weaker than that of the brazing metal, the use of the organic matrix material may cause some problems. In order to solve the aforementioned problem of weak bonding force, the inventors have found that the superabrasive particles can be sufficiently maintained by arranging the plurality of superabrasive particles to distribute mechanical pressure or friction evenly on all the superabrasive particles in the organic matrix. In the organic matrix. Thus, the complex smooth and coarse superabrasive particles can be disposed directly into the diorganic matrix or can be bonded to the fragment matrix and the fragment matrix can be in the organic matrix. The superabrasive particles can be attached to the plurality of matrix substrates using an organic material, a more soldered metal, a ceramic material, and electroplating techniques. Since the superabrasive particles can be more easily leveled in a small area compared to the entire chemical mechanical polishing of the surface of the tamper, 15 201143979 is therefore. A plurality of substrates can be useful. For example, in the case of a brazing metal, the degree of deformation of the segment substrate can be greatly reduced during the cooling process because the surface area of a segment of the substrate is smaller than the surface area of the supporting substrate. Thus, the leveling structure can be maintained during the brazing process of the segment substrate and then the plurality of segment substrates can be bonded to the surface of the support substrate. If a brazing metal is used to tightly attach the segment substrate to the support substrate, the support substrate reduces the degree of deformation by increasing the rigidity of the segment substrate. Thereby, the superabrasive particles can be closely adhered to the plurality of matrix substrates by using an organic material, a brazing metal, a ceramic material, a plating technique, or the like. Other benefits of using a segmented substrate include the ability to attach the abrasive layer to the segmented substrate in accordance with specified specifications, independently of the method of attaching the segmented substrate or the plurality of substrates to the polishing pad conditioner substrate. For example, when the polishing pad conditioner that is intended to be used has a large or complex surface area, various attachment methods may involve high temperatures and/or pressures, demanding environmental conditions, or simply requiring high intensive labor. Performing the attachment method with a distinct, simple-performing fragment matrix can improve the cost, efficacy, and integrity of the attachment procedure; in addition, if the fragment matrix is separated into relatively small portions, it is easier to mount the fragments on the substrate. Similarly, the plurality of abrasive segments produced by the flattening of the polishing layer are more likely to be positioned, leveled, and formed on the surface of the polishing pad conditioner substrate after the polishing layer is individually attached to each of the polishing segments. , orientation, etc. In addition, by obtaining a plurality of abrasive segments each having a plurality of superabrasive particles having different configurations to which are attached, one of the polishing patterns on the face of the polishing pad conditioner substrate is designed to be capable of The most effective trimming procedures are performed. For example, the spacing between adjacent abrasive segments can be carefully selected to help or more control the flow of various fluids (such as slurry) around or across the plurality of abrasive segments to increase The efficiency and effectiveness of the material removal process. Moreover, as shown in the first figure, a segment matrix having different grinding wheel temples (such as different sizes, shapes, grinding invasiveness, etc.) can be used on a single substrate to be able to customize the abrasive wheel of the polishing pad conditioner. The whole of the motorcycle. The plurality of rough and smooth superabrasive particles can be leveled into various angles according to the characteristics of the chemical mechanical polishing crucible and the processed <work object, when the position of the cutting tip of the plurality of superabrasive particles is along a specific contour (possibly For planar or non-planar, the effect of the leveling is related to the degree of deviation of the contour. In the aspect, for example, the plurality of rough superabrasive particles and the plurality of smooth superabrasive particles are substantially leveled and highly The range is from about 丨 microns to about 10 microns. In another aspect, the plurality of thick chain superabrasive particles and the plurality of smooth superabrasive particles are substantially planarized and have a height ranging from about 2 microns to about 3 microns. Substrate or bonding Whether the superabrasive particle system is directly placed on the submount of the segment substrate, various configurations can be used. Yang Miao + two, Zhuang may wish. The configuration may vary depending on the polishing pad trimming method desired, and π is scary M and therefore the arrangement as described below should not be considered as a limitation of the present invention. For example, in one aspect, the smooth superabrasive particle is divided into one or more smooth superabrasive particle blocks of eighty and seventy-seven, and the complex rough superabrasive is divided into eight in the eight π proud ancestor Or a plurality of separate rough superabrasive particle regions. After the plural test, the & field may be a region in which a super-abrasive particle of a specific type is directly disposed on the support group, or a region of the segment is created, and the segment is embedded in the segment. On the substrate. In one side and in a single type of superabrasive particle facet, as shown in FIG. 1, the plurality of smooth superabrasive particles 12 and the plurality of coarse superabrasive blocks 14 are spaced apart. It is disposed on the support substrate 16. In another aspect, the plurality of smooth superabrasive particles and the plurality of coarse superabrasive particles are evenly interleaved and interlaced on the support matrix (not shown in the figure to directly and uniformly superimpose the two types of superabrasive particles The spacers are interspersed with the support matrix or the two types of superabrasive particles are mixed and dispersed on a segment substrate. The chemical mechanical polishing pad conditioner may also comprise a plurality of annular super-shoulder particle blocks. In contrast to the single-ring structure shown in Figure 1. Further, the deer note that a block or segment can also include an arrangement of a plurality of patterns having one or more regions or segments. These techniques can be used to modify Various chemical mechanical polishing pad materials, gold is particularly advantageous for the modification of non-porous chemical mechanical polishing pad materials. Since the non-porous seven-scientific mechanical polishing pad lacks holes to contain or grasp the polishing liquid, there is no effective way to grasp and move the polishing liquid. Therefore, for such materials, the problem of accommodating the slurry in the gap between the rough portions is worsened. The polishing slurry channel is cut on the surface of the polishing pad. It can promote the activity between the cliff and the working object in the rough part, thus increasing the efficiency of the non-porous material. The smoothing super-abrasive particles can be used to roughen such polishing pad, and the coarse-phase super-abrasive particles can be cut. The slurry channel is adapted to cause the slurry to move on the surface of the polishing crucible by capillary action. According to some aspects of the invention, the method of the invention can also be used to modify an impregnated polishing pad, such as a pad impregnated with graphite. For more information on such polishing pads, please refer to US Patent No. 7,494,4G4, filed on July 2nd of the next year, and US Patent No. 7, 2011. Application No. i2/389,922, which can be incorporated into the present application as a reference. Various materials can be considered for use as materials for rough and smooth superabrasive particles. Any known to be used in a chemical mechanical polishing 塾 dresser Abrasive particles are all considered to be within the scope of the invention. Non-limiting examples of such materials include diamond materials 'nitride materials, ceramics, etc. In one aspect, The plurality of superabrasive particles may comprise a diamond material. Such diamond materials may include natural and synthetic diamonds, single crystals, polycrystals, etc. In another aspect, the plurality of superabrasive particles comprise a cubic tantalum nitride material. The complex smooth superabrasive particles are single crystal superabrasive particles. In the specific aspect, the single crystal superabrasive particle system can be a diamond. Since the self-shaped (euhedral) diamond crystal is by (1〇〇), The crystal angle formed by 1!丨), (ι 1〇) and other faces has an obtuse end. Such a diamond material can be used as a smooth superabrasive particle to form a large roughness in the chemical mechanical polishing. The smooth superabrasive particles can also be regarded as deformed superabrasive particles. In another aspect, the rough superabrasive particle system can be a single crystal superabrasive particle having a cracked tip, edge, face or a combination thereof, the complex cracked The 4-knife can be sharpened to cut the slurry channel on the polishing pad material. In still another aspect, the plurality of rough superabrasive particles are polycrystalline superabrasive particles. Polycrystalline materials have a plurality of smaller crystals on the surface of the particles that effectively cut the slurry channels on the polishing pad and promote removal of the glaze and other debris. In a particular aspect, the plurality of polycrystalline superabrasive particles are polycrystalline diamonds. Rough superabrasive particles can also be considered as sharp superabrasive particles. In one aspect, the plurality of smooth superabrasive particles can be distinguished by the distance that a particle is pressed into the 201143979 chemical mechanical polishing pad prior to the cutting action. In one aspect, for example, a smooth superabrasive particle is pressed into a chemical mechanical polishing pad at a depth of at least 15 microns before the cutting action occurs; in another aspect, a smooth superabrasive particle is subjected to the cutting behavior. Prior to occurrence, a distance of at least 20 microns is applied to a chemical mechanical polishing pad. Similarly, the coarse superabrasive particles can be distinguished by the distance that a particle is pressed into the chemical mechanical polishing pad before the cutting action occurs. In one aspect, for example, when a rough superabrasive particle is pressed into a chemical mechanical polishing pad by a distance of less than or equal to about ίο microns, the cutting behavior begins; in another aspect, when a rough superabrasive The cutting behavior begins when the particles are pressed into a chemical mechanical polishing pad at a distance of less than or equal to about 5 microns. The substrate of the chemical mechanical polishing pad conditioner may be used according to the application of the designed polishing pad conditioner, but in the aspect including the surface on which the support substrate is fixed to provide the polishing pad for trimming The device can be used to grind or cut other surfaces that remove material from a chemical mechanical polishing pad. In one aspect, the trimmer or support substrate can be stainless steel; in another aspect, the support substrate can be a general steel. If a general steel is used, it is advantageous to apply the complex surface after the process of fixing the plurality of superabrasive particles, followed by electroplating the complex surface to make the conditioner have acid resistance. Additional and diverse abrasive segments used in the present invention are also contemplated. For example, the use of various cutting elements/abrasive segments in consideration can be used in detail in the US application filed on February 17, 2006. 11/357, 713 'The system can be incorporated in this case for reference. In addition to this, the plurality of abrasive segments can be formed using ceramic material elements (as in the case of the segment substrate and/or the abrasive layer, either or both), electroplating techniques, and the like. The various fragment matrices shown and discussed herein can be made from a variety of materials including, but not limited to, metallic materials (e.g., aluminum, copper, steel, metal alloys, etc.), ceramic materials, glass, polymers, composites, and the like. In general, any material that actually allows the abrasive segments to adhere to can be used. It is contemplated to use various organic materials as an organic matrix and/or to closely bond the superabrasive particles to the fragment matrix. Examples of suitable organic materials include, but are not limited to, amine based resins, acrylate resins, alkyd resins, polyester resins, polyamide resins, polyamido resins, polyurethane resins, phenolic resins, phenolic/latex resins, rings. Oxygen resin, isocyanate resin, isocyanurate resin, polydecane resin, reactive vinyl resin, polyethylene resin, polypropylene resin, polystyrene resin, phenoxy resin, perylene resin, polysulfone Resin, acrylonitrile-butadiene-styrene copolymer, acrylic acid a, polycarbonate resin, and mixtures thereof. In a particular aspect, the organic matrix material can be an epoxy resin. In another aspect, the organic matrix material can be a polyamidamide resin. In still another aspect, the organic matrix material is a polyurethane resin. The "reverse casting" method of the 5 stomach can be used to accurately and controllably orient and adhere the abrasive material to the segment substrate, and position and attach the segment substrate to the polishing pad conditioner. Supporting a substrate, the method comprising first attaching a superabrasive material (such as a plurality of superabrasive particles or a segment of the substrate) to a substrate using a "mask" material, and then partially protruding the particles of the reticle material for use herein The method in question is attached to the &well finisher substrate, after which the reticle material can be removed. 21 201143979 Suitable reverse casting methods can be found in various patents and patent applications of the inventor of the present application, including US Application No. 60/992,966, filed on December 6, 2007, filed on May 16, 2007. U.S. Application Serial No. 1 1/804, 221, and U.S. Application Serial No. 1 1/805,549, filed on May 22, 2007, the disclosure of The fragments are attached to the substrate of the polishing pad conditioner and used to attach the plurality of superabrasive particles of the present invention to the plurality of matrix substrates. Such techniques provide very precise control of the lateral placement of the plurality of abrasive segments or superabrasive particles, as well as very accurately controlling the relative height of the plurality of abrasive segments or superabrasive particles. When an organic bonding material layer is used, those having ordinary skill in the art can know various methods of hardening the organic material layer to cause the organic material to undergo a phase change from at least a soft state to at least a hard state. Hardening can be achieved by, but not limited to, contacting the organic material with heat in the form of heat, electromagnetic radiation (such as ultraviolet light, infrared light, and microwave radiation), particle impact (such as electron beam), organic catalyst, inorganic catalyst, or other Hardening techniques well known to those of ordinary skill in the art are available. In one aspect of the invention, the organic material may be a thermoplastic material that can be reversibly hardened or softened by cooling and heating, respectively; in another aspect, the organic material layer can be a thermosetting material, a thermosetting material. It cannot be reversibly hardened and softened like a thermoplastic material; in other words, once the hardening phenomenon occurs, the process is essentially irreversible. As for the above-mentioned finer parts of the organic material, as listed below, the organic materials useful in the examples of the present invention include, but are not limited to, an amine tree, which contains an alkylated urea resin. -formaldehyde 22 201143979 resins), melamine-formaldehyde resins and alkylated benzoguanamine-formaldehyde resins; acrylate resins, including Vinyl acrylates, aery 1 ated epoxies, acrylated urethanes, acrylated polyesters, acrylic acid acrylic acid Acrylated acrylics, acrylated polyethers, vinyl ethers, acrylated oils, acrylated silicons, and related mercapto acrylates (methacrylates); alkyd resins, such as urethane alkyd resins; polyester resins; polyamines Polyamide resins; polyimide resins; reactive urethane resins; polyurethane resins; phenolic resins, such as Resole resins and novolac resins with less chain chains; phenolic/latex resins; epoxy resins such as bisphenol Epoxy resins); isocyanate resins; isocyanurate resins; polysiloxane resins comprising alkylalkoxysilane resins; Reactive vinyl resins; resins bearing the BakeliteTM brand, which include polyethylene resins, polypropylene resins, epoxy resins, phenolic resins, Polystyrene resins, phenoxy resins, 23 201143979 perylene resins, polydecene resins (p Olysulf〇ne resins), ethylene c〇p〇lymer resins, acrylonitrile-butadiene-styrene resins (ABS), ethylene-based resins Vinyl resins);acrylic resins; polycarbonate resins and mixtures or compositions thereof. In an aspect of the invention, the organic material may be an epoxy resin; in another aspect, the organic material may be a polyimide resin; and in another aspect, the organic material may be a polyurethane resin. Many additives can be included in the organic material to aid its use. For example, additional crosslinking agents and fillers can be used to promote the hardening characteristics of the organic material layer. In addition to this, a solvent may be used to transform the properties of the organic material in an uncured state, and a reinforcing material may be disposed in at least a portion of the hardened organic material layer. Such a reinforcing material can be used to increase the strength of the layer of organic material, and thus to promote the retention of the individual abrasive segments; in one aspect, the reinforcing material can comprise ceramic, metal or a combination thereof, examples of ceramics including alumina , aluminum carbide, cerium oxide, cerium carbide, zirconia, cerium carbide and mixtures thereof. Additionally, in one aspect, a couplant or organometallic compound can be applied to the surface of each abrasive material to assist in maintaining the superabrasive material in the organic material layer by chemical bonding. A wide variety of organic and organometallic compounds can be known and used by those of ordinary skill in the art. The organometallic-mixture can create a chemical bond between the superabrasive material and the organic material matrix, thereby increasing the retention of the metal material therein. Thus, the organometallic coupling agent acts as a bridge to form a bond between the organic material and the surface of the superabrasive material. In one aspect of the invention, the bismuth organometallic light-binding agent is titanate, zirconate, decane or a mixture thereof. The amount of the organometallic coupling agent to be used depends on the kind of the coupling agent and the surface area of the superabrasive material, and it is usually necessary that 5% to 1% by weight of the organic material layer is sufficient. Specific but non-limiting examples of decane suitable for use in the present invention include 3-methyltriethoxydecane [3_glycid(R) xypr〇pyltrimeth〇xy silane, available from Dow Corning, Inc., model number ζ·6〇4〇], r-mercaptopropoxypropyltrimethoxysilane (T_methacryl〇xy propyltrimethoxy Silane, purchased from Uni〇n Carbide Chemicals Company, model A- 174], cold-(3,4-epoxycyclohexane)
乙基三 曱氧基 矽曱烷 〔召 -(3,4-epoxycyclohexyl)ethyltrimethoxy silane ) 、γ -氨丙基 二乙氧基石夕曱烧〔7* -aminopropyltriethoxy silane)、Ν- ( 0 -氨乙基）-Τ-氨丙基曱基二甲氧基矽曱烷（Ν-( yS -aminoethyl)- τ -aminopropylmethyldimethoxy silane，購自 聯合碳化物公司（Union Carbide)、信越化學工業株式會社 (Shin-etsu Kagaku Kogyo Κ·Κ_)等〕。 適合用於本發明之鈦酸鹽耦合劑特定但非限制的範例 包括異丙基三硬酯酸鈦酸酯〔isopropyltriisostearoyl titanate 〕、二（異丙苯基）氧乙酸酯鈦酸酯 〔 di(cumylphenylate)oxyacetate titanate〕、4-氨基苯續醯氟十 二烷基 苯磺酸 鈦酸酯 〔 4- aminobenzenesulfonyldodecylbenzenesulfonyl titanate〕、四 辛基雙（二三葵基亞填酸）欽酸酯 〔tetra〇ctyibis 25 201143979 (ditridecylphosphite) titanate ]、異丙基三（N-氨基乙基-敦 基乙基）鈦酸酯〔isopropyltri(N-ethylamino-ethylamino) titanate，購自美國肯瑞奇石油化工有限公司（Kenrich Petrochemicals，Inc.)〕、新烷氧基鈦酸酯（ne〇alky〇xy titanates) ’ 例如型號 LiCA_(n、LICA-09、LICA-28、LICA-44 以及LICA-97(也是購自Kenrich)等。 適合用於本發明之鋁耦合劑特定但非限制的範例係包 括醋酸烧氧基二異丙氧基紹〔acet〇alk〇xy aluminum diis〇pr〇Pylate，購自橘生藥品工業株式會社（Ajin〇m〇t〇 κ κ. 〕等。 適合用於本發明之锆酸酯耦合劑特定但非限制的範例 係包括新院氧基锆酸酯〔ne〇alk〇Xy zirc〇nates，型號為 LZ-01、LZ-09、LZ- 12、LZ-38、LZ-44、LZ-97，全部皆購 自美國肯瑞奇石油化工有限公司（Kenrich Petr〇chemicais，3-(3,4-epoxycyclohexyl)ethyltrimethoxy silane, γ-aminopropyldiethoxysilane, 7*-aminopropyltriethoxy silane, Ν-( 0 - ammonia B )-氨-aminopropyl decyl dimethoxy decane (Ν-( yS -aminoethyl)- τ -aminopropylmethyldimethoxy silane, purchased from Union Carbide, Shin-Etsu Chemical Co., Ltd. (Shin- Etsu Kagaku Kogyo Κ·Κ_), etc. Specific, but non-limiting examples of titanate coupling agents suitable for use in the present invention include isopropyltriisostearoyl titanate, di(isopropylphenyl) Di(cumylphenylate) oxyacetate titanate, 4-aminobenzenesulfonyldodecylbenzenesulfonyl titanate, tetraoctyl bis (di-methane) Acidic acid esterate [tetra〇ctyibis 25 201143979 (ditridecylphosphite) titanate ], isopropyltri(N-ethylamino-ethylamino) titanate, purchased from the United States Kenrich Petrochemicals (Inc.), neoalkoxy titanates (eg type LiCA_(n, LICA-09, LICA-28, LICA-44 and LICA-97 (also available from Kenrich), etc. Specific, but non-limiting examples of aluminum coupling agents suitable for use in the present invention include acetic acid alkoxy diisopropoxy acetonitrile (acetacetal xy aluminum diis 〇 pr 〇 Pylate) , purchased from Okayama Pharmaceutical Co., Ltd. (Ajin〇m〇t〇κ κ.), etc. Specific but non-limiting examples of zirconate coupling agents suitable for use in the present invention include Xinyuan Oxyzirconate [ne 〇alk〇Xy zirc〇nates, models LZ-01, LZ-09, LZ-12, LZ-38, LZ-44, LZ-97, all purchased from Kenrich Petr Chemical Co., Ltd. Chemicais,
Inc.))等，其他已知的有機金屬耦合劑〔如硫醇基化合物 (thiolate based compounds))能用於本發明且被考慮在本發 明之範疇中。 金屬硬焊法也能應用於將該複數超研磨粒子附著至一 片段基質或將一片段基質附著於一支撐基材，所屬技術領 域中具有通常知識者係熟知金屬硬焊法。舉例而言，在製 作鑽石顆粒研磨片段時’該製程包括混合鑽石顆粒（如4〇/5〇 美國網目（mesh)之磨料）以及適當的金屬支撐基質（結合）粉 末（如具有1.5微米的鈷粉末）；接著將該混合物壓入一模 具中，以形成一預期的形狀（如—鋸子片段）；該工具的「生 胚（green form)」接著係在溫度為7〇〇_12〇〇β(：之間燒結而固 26 201143979 化，並形成具有複數研磨顆粒設置於其中的單一塊體；最 後’該硬化的塊體係（如以硬焊方式）附著於一片段基質。 5午^其他的範例皆能用此技術，且為於所屬技術領域中具 有通常知識者所熟知的。應該注意的是也能使用各種燒結 方法將該研磨層附著於該片段基質，於所屬技術領域中具 有通常知識者在掌握本發明内容後就能輕易地了解合適的 燒結方法。 該研磨層也能藉由已知的電鍍和/或電沉積法附著於一 片段基質。如一個在電沉積之前或同時定位並保持該研磨 材料的適合方法之範例，該方法使用一模具，該模具包含 一能夠有效防止電沉積材料累積在模造表面⑼“以以 surface)上的絕緣材料。在電沉積時，研磨粒子能保持在該 模具之模造表面上，因&，能防止電沉積材料累積在粒子 尖端以及該拋光墊修整器之基材的工作表面上。這種技術 係如於2005年12@ 2日所提出之美國專利申胃㈣ 1 1/292,93 8號中所描述的，其係整合於本文之中以作參考。 可在該絕緣材料上貫穿形成一個或多個孔，使得電解 液從模具外的區域經過該模具而循環至該拋光墊修整器之 基材的表面’以促進電沉積。這種循環有利於讓在該電沉 積位置處的電解液保持有充足的離子濃度。也可使用其他 已知的技術，且能了解上述所提供㈣例僅為多種適合技 術中的其中之一。 實施例 明之拋光墊修整器的 並非用以限制本發明 方 以下實施例提供各種製造本發 法。需要了解這種實施例僅供說明 27 201143979 例 1 -片段基質㈣由如下方式所形成：首先 石顆粒（如50/60網目）排列在 ^ 开另 郵、，Ό滑（如丙嫌S穿谢賠、 的不鏽鋼平板模具上（有輕微的凸面或輪廓的 使用），使用一硬橡膠材質以將個 八0以 材質以將個別的鑽石顆粒壓入該黏結 層1且顆粒的_藉由該平板模具而整平，接著將 樹脂以及硬化劑的混合物傾倒在突出於黏結層外的顆粒上 擒止環定向闕模具之㈣以保留該環氧樹脂），硬化 後’移除該模具’且剝除該黏結層，所留下的片段基質包 括突出於該硬化之環氧樹脂基材外的平滑鐵石顆粒。 例 2 -片段基質係藉由如下方式所形成：首先將8〇/9〇網目 大小的破裂單晶錢石顆粒排列及硬焊於—不鏽鋼基材上， 所留下的片段基質包括突出於該硬化之硬焊合金之粗糙的 鑽石顆粒。 例 3 一密切結合於以上所述之例丨與例2的複合設計。例i 及2的片段基質係排列於一暫時的基材上且一平板係用 於整平該片段基質之該複數超研磨粒子的尖端。當這些尖 端對齊後，該片段基質的基底係以環氧樹脂保護住。一 例 4 兩種形式的片段基質藉由如下方式形成：利用鎳基焊 料（Nichrobraz LM)將鑽石顆粒硬焊於片段基質的基材上。 該片段基質的基材係為不鏽鋼（316)，其直徑為20毫米，厚 度為4毫米。平滑形式的片段基質係由具有硬塊或平滑的 28 201143979 鑽石顆粒形狀之60/70目的鋼眼網板（型號Mbg_66〇，為 Diamond Irm〇vati〇n所設計的產品）所製得，而粗糙形式的 片段基質係由具有不規則之鑽石顆粒形狀之1〇〇/ιι〇目的 鋼眼網板（型號MBG-620)所製得。將該兩種形式的片段基 質置於一平坦的不鏽鋼基材上並以一鑄模成形的陶瓷間隔 物分離而呈間隔設置。一平坦的不鏽鋼板係將鑽石尖端= 向片段基質壓入20微米以内以進行整平。添加環氧樹脂於 每一片段基質的周圍，再以紫外線（UV)對基材進行硬化。 需要瞭解的是以上所述之排列皆僅是在描述本發明原 則的應用’許多改變及不同的排列亦可以在不脫離本發明 之精神和範圍的情況下被於本領域具通常知識者所設想出 來而申睛範圍也涵蓋上述的改變和排列。因此，儘管本 發月被特疋及詳述地描述呈上述最實用和最佳實施例，於 本領域具通常知識者可在不偏離本發明的原則和觀點的情 況下做許多如尺寸、材料、形狀、樣式、功能、操作方法、 組裝和使用等變動。 【圖式簡單說明】 圖1為根據本發明之一具體實例之化學機械拋光墊修 整器的頂視圖。 【主要元件符號說明】 12平滑超研磨粒子區塊 14粗糙超研磨粒子區塊 16支撐基材 29Inc.) and the like, other known organometallic coupling agents [e.g., thiolate based compounds) can be used in the present invention and are contemplated as being within the scope of the present invention. The metal brazing method can also be applied to attaching a plurality of superabrasive particles to a segment substrate or attaching a segment substrate to a support substrate, which is well known to those skilled in the art. For example, in the production of diamond particle grinding segments, the process includes mixing diamond particles (such as 4〇/5〇 US mesh abrasives) and appropriate metal support matrix (combined) powders (such as cobalt with 1.5 microns). Powder); the mixture is then pressed into a mold to form a desired shape (eg, a saw segment); the "green form" of the tool is then at a temperature of 7 〇〇 _12 〇〇 β (: Between sintering and solidification, and forming a single block with a plurality of abrasive particles disposed therein; finally 'the hardened block system (eg, brazed) attached to a segment of the matrix. 5 pm ^ Other This technique can be used in the examples and is well known to those of ordinary skill in the art. It should be noted that the abrasive layer can also be attached to the segment substrate using a variety of sintering methods, with general knowledge in the art. A suitable sintering method can be easily understood by grasping the present invention. The abrasive layer can also be attached to a segment substrate by known electroplating and/or electrodeposition. An example of a suitable method for positioning and retaining the abrasive material prior to or simultaneously with electrodeposition, the method using a mold comprising an insulating material that is effective to prevent the electrodeposited material from accumulating "on the surface" of the molding surface (9). At the time of electrodeposition, the abrasive particles can be held on the molding surface of the mold, because & can prevent the electrodeposition material from accumulating on the particle tip and the working surface of the substrate of the polishing pad conditioner. U.S. Patent Application Serial No. 1/292,93, filed on Dec. 2, 2005, which is incorporated herein by reference. a hole that allows electrolyte to pass from the area outside the mold through the mold to the surface of the substrate of the polishing pad conditioner to promote electrodeposition. This cycle facilitates maintaining sufficient electrolyte at the electrodeposition site Ion concentration. Other known techniques can also be used, and it can be understood that the (4) examples provided above are only one of a variety of suitable techniques. The following examples are not intended to limit the invention. It is to be understood that the examples are for illustrative purposes only. 27 201143979 Example 1 - Fragment substrate (4) is formed by: first stone particles (eg 50/60 mesh) Arranged in ^ open another post, slick (such as the use of a stainless steel flat plate mold with a slight convexity or contour), use a hard rubber material to put a piece of material to the individual The diamond particles are pressed into the bonding layer 1 and the particles are leveled by the flat plate mold, and then the mixture of the resin and the hardener is poured onto the particles protruding beyond the bonding layer, and the ring is oriented to the mold (4) to retain The epoxy resin, after hardening, 'removing the mold' and stripping the adhesive layer, the remaining fragment matrix comprising smoothed iron particles protruding beyond the hardened epoxy resin substrate. Example 2 - Fragment matrix is formed by first arranging and brazing 8 〇/9 〇 mesh-sized ruptured single crystal granules onto a stainless steel substrate, the remaining fragment matrix comprising Rough diamond particles of hardened brazing alloy. Example 3 A close design to the composite design of Example 2 and Example 2 described above. The fragment substrates of Examples i and 2 are arranged on a temporary substrate and a plate is used to level the tips of the plurality of superabrasive particles of the matrix. When the tips are aligned, the substrate of the segment substrate is protected by epoxy. An example 4 Two forms of fragment matrix were formed by brazing diamond particles to a substrate of a segment substrate using a nickel-based solder (Nichrobraz LM). The substrate of the segment substrate was stainless steel (316) having a diameter of 20 mm and a thickness of 4 mm. The smooth form of the fragment matrix is made of a 60/70 mesh steel mesh plate (model Mbg_66〇, designed for Diamond Irm〇vati〇n) with a hard block or smooth 28 201143979 diamond particle shape, and the rough form The fragment matrix was prepared from a steel eye stencil (model MBG-620) having an irregular diamond particle shape of 1 〇〇/ιι. The two forms of the fragment substrate were placed on a flat stainless steel substrate and separated by a cast ceramic spacer. A flat stainless steel plate presses the diamond tip = into the segment matrix within 20 microns for leveling. An epoxy resin is added around the substrate of each of the fragments, and the substrate is hardened by ultraviolet rays (UV). It is to be understood that the above-described arrangements are merely illustrative of the application of the principles of the invention. Many variations and different arrangements can be conceived by those skilled in the art without departing from the spirit and scope of the invention. The scope of the application also covers the above changes and arrangements. Accordingly, even though the present invention has been described in detail and described in detail herein as the preferred and preferred embodiments, those skilled in the art can <Desc/Clms Page number>> Changes in shape, style, function, method of operation, assembly and use. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a top plan view of a chemical mechanical polishing pad conditioner in accordance with an embodiment of the present invention. [Main component symbol description] 12 smooth superabrasive particle block 14 rough superabrasive particle block 16 support substrate 29