TW200911462A - Superhard cutters and associated methods - Google Patents

Superhard cutters and associated methods Download PDF

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Publication number
TW200911462A
TW200911462A TW96143399A TW96143399A TW200911462A TW 200911462 A TW200911462 A TW 200911462A TW 96143399 A TW96143399 A TW 96143399A TW 96143399 A TW96143399 A TW 96143399A TW 200911462 A TW200911462 A TW 200911462A
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Taiwan
Prior art keywords
cutting
polycrystalline
superhard
cutting device
resins
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TW96143399A
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Chinese (zh)
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TWI355986B (en
Inventor
Chien-Min Sung
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Chien-Min Sung
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Priority claimed from US11/560,817 external-priority patent/US7762872B2/en
Priority claimed from US11/786,426 external-priority patent/US7658666B2/en
Application filed by Chien-Min Sung filed Critical Chien-Min Sung
Publication of TW200911462A publication Critical patent/TW200911462A/en
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Publication of TWI355986B publication Critical patent/TWI355986B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12Dressing tools; Holders therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/14Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Nonmetal Cutting Devices (AREA)

Abstract

A cutting device comprises a base having a solidified organic material layer disposed thereon. A plurality of individual polycrystalline cutting elements are secured in the solidified organic material layer. Each of the plurality of individual polycrystalline cutting elements has a substantially matching geometric configuration.

Description

200911462 九、發明說明: 【發明所屬之技術頜域】 本發明係關於一種超硬切割裝置,該裝置被用於去除 以各種材料形成之工件上的材料(例如,平刨(p|ane)、 知刨(smooth)、拋光(polish)及整修(dress)等等)。因此, 本發明涉及化學、物理以及材料科學領域。 【先前技術】 據估計,半導體工業目前每年花費超過一億美元製造 具有非常平坦且光滑之表面的晶圓。典型地,化學機械拋 光(CMP)用於半導體裝置的製造程序以獲得光滑的晶圓。 在傳統的製程令,欲進行拋光的晶圓通常固定於一载具 上,該載具定位於一旋轉平台上所附加的拋光墊之上。當 拋光液施加於該拋光墊上且對該載具施以壓力時,透過^ 具與旋轉平台有相對運動以對晶圓進行拋光。 β雖然此已知製程已被成功地使用多年’其仍遭遇數項 問題。舉例而言,該傳統製程相對地昂貴,且並非總是有 效率’因為製程完畢後,矽晶圓可能在厚度上不均勻 可能不夠光滑。險τ诎沴卞, 7200911462 IX. INSTRUCTIONS: [Technical jaw region to which the invention pertains] The present invention relates to an ultra-hard cutting device for removing material on a workpiece formed of various materials (for example, planer (p|ane), Know the smooth, polish and dress, etc.). Accordingly, the present invention relates to the fields of chemistry, physics, and materials science. [Prior Art] It is estimated that the semiconductor industry currently spends more than $100 million annually to fabricate wafers having a very flat and smooth surface. Typically, chemical mechanical polishing (CMP) is used in the fabrication of semiconductor devices to obtain smooth wafers. In conventional process orders, the wafer to be polished is typically attached to a carrier that is positioned over a polishing pad attached to a rotating platform. When a polishing liquid is applied to the polishing pad and pressure is applied to the carrier, the transmission tool is moved relative to the rotating platform to polish the wafer. Although this known process has been successfully used for many years, it still suffers from several problems. For example, this conventional process is relatively expensive and not always efficient' because after the process is completed, the wafer may be uneven in thickness and may not be smooth enough. Risk τ诎沴卞, 7

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I 200911462 除了上述的考量,半導體上電路的線寬(例如,節點 (node))目前達到病毒般的大小範圍(例如,1〇_1〇〇nm)。 此外’目如正製造較多層的電路以符合增加的先進邏輯設 計需求量。為了設置供製造奈米尺寸構造的多層結構,在 半導體組裝期間各層結構必須極為平坦且光滑。雖然鑽石 顆粒塾整修器已被有效率地使用於整修該用於對前述積體 電路設計進行拋光的CMP拋光墊,這些整修器並無法適 用於製造具有小於65nm節點的切邊裝置。此乃是因為, 減少銅導線尺寸時,粗糙拋光或是過度拋光所引起的不均 勻厚度將會戲劇性地改變導電性。此外,由於珊蝴狀的介 電層’此脆弱結構必須透過極為輕缓的拋光以避免碎裂。 因此’ CMP製程所採用的壓力必須大大減少。 爲此,那些使用銅電解方式(應用材料公司的EcMp) 或疋氣膜塾支撐晶圓方式(曰本的Semitsu公司)等新CMP 製程減少拋光墊和晶圓之間接觸點的拋光壓力。然而,採 用較輕緩拋光作業的結果將導致晶圓的拋光率下降。為了 補償生產率的損失,必須同時對晶圓的整個表面進行拋 光。為此,拋光墊與晶圓的接觸點在面積上必須更小,但 在數目上必須更多。而此做法與CMp以相對大的接觸面 積及相對少量之接觸點的實務相違背。 因此,為了對脆弱的晶圓進行越來越和緩的拋光,必 須減少CMP拋光塾的報趟部。然而,為了避免抛光速率 下降’必須創造更多的接觸點。必然地,拋光墊粗糙部位 在尺寸上必須更精細而數量上必須更多。然而拋光製程變 6 200911462 得越細緻’刮傷晶圓表面的風險變的越高。為了避免刮傷 的風險’所有粗糙部的最高尖端必須完全平等。否則,少 數突出的「殺手粗糙部」會損毁被拋光的晶圓。 【發明内容】 本創作係提供一種切割裝置’其包含一基座,該基座 包含複數獨立聚晶(p0|yCrysta丨丨ine)切割元件,該等獨立聚 晶切割元件係固設在一固態有機材料層上。各獨立聚晶切 割元件可包含一致的幾何結構。 本創作另一方面係提供一切割裝置,其包含—基座, 忒基座上设置有一固態有機材料層,在該固態有機材料上 固設有複數獨立聚晶切割元件,每個獨立聚晶切割元件包 括至少一個切割尖端。該等切割元件的切割尖端係對齊於 一共同平面上。 本發明另一方面提供一切割裝置的形成方法,其包 含.獲得一基板;在該基板上將複數獨立聚晶切割元件配 〆 置於一未硬化的有機材料之内,每一個獨立聚晶切割元件 L 具有一大致上一致的幾何結構,硬化該有機材料以形成一 固態有機材料層,使得每一個獨立聚晶切割元件固設於該 固態有機材料層内。 、^ 本發明各種特徵在此概括地敘述,因此,本笋明接下 來的詳細說明會更容易被了解,以致於本發明對技術領域 的貢獻會被更加理解。在接下來本發明伴隨範例性申請專 利範圍的詳細敘述中,本發明其他特徵將會變的更:清 楚’或是可透過本發明的實務被學習。 β 200911462 【實施方式】 在揭露與描述本發明冑,可王里解的^务明並非限 制在之後所揭露的特定的構造、製程步驟或 可擴大到被那些相關領域中熟習技藝者所了解的均等物? 也應了解較,在此所使用的技術僅被用於敘述特定的實 施例’而非意圖造成限制。 書以及附加的申請專利範圍中所 」是包含了複數的用法,除非文 舉例而言,「一切割元件」包含 必須注意的是,說明 使用的冠詞「一」及「該 章中特定指出其他涵義。 了一個或更多這樣的元件 定義 在描述與請求本發明時 用下列術語。 會根據下列提出的定義來使 m t所使帛的所有網孔(Mesh)尺寸係美_網孔,除非 ^曰出^他涵義。此外,因為在特^「網孔尺寸」中的 各粒子貫際上在尺寸上 的相異程度可能超過一小幅度的尺 寸分佈範圍,因此,—舻 幻尺 子的平均網孔尺寸。 丨疋果祖 在此所使用的「—舻丞二 ^ ..^ ^ 十面」係指一剖面,其包含了一 土礎表面上之平坦剖面或 礎表面係為切割元件之輪廊的剖面…’該基 有限制的條件下…斤對齊。例如該剖面在沒 匕括一平面剖型 面、凹剖面、多階式剖面等等。 凸剖 在此所使用的「邊总4t 」係心一切割元件的一部分,其包 200911462 含橫跨:部位的某個可量測的寬度,&中,該部位係用於 接觸並消除一工件上的材料。如一範例圖式所示,一血型 的刀刀具有一在該刀刀上縱向延伸的切割彡,該刀刃可相 對一工件橫擺而自該工杜μ 丨+ ^丨-T*丄1 曰忑工件上刮下或刨下材料,藉此以其切 割「邊」自該工件上去除材料。I 200911462 In addition to the above considerations, the line width (eg, node) of a circuit on a semiconductor currently reaches a viral size range (eg, 1〇_1〇〇nm). In addition, more layers of circuits are being fabricated to meet the increased demand for advanced logic designs. In order to provide a multilayer structure for fabricating nano-sized structures, the layers must be extremely flat and smooth during semiconductor assembly. While diamond particle reticle trimmers have been used efficiently to refurbish the CMP pad used to polish the aforementioned integrated circuit design, these refiners are not suitable for fabricating trimming devices having nodes less than 65 nm. This is because, when reducing the copper wire size, the uneven thickness caused by rough polishing or excessive polishing will dramatically change the conductivity. In addition, this fragile structure must pass through extremely gentle polishing to avoid chipping due to the dielectric layer of the butterfly. Therefore, the pressure used in the CMP process must be greatly reduced. To this end, new CMP processes such as copper electrolysis (Applied Materials' EcMp) or helium film-supported wafers (Semitsu, Sakamoto) reduce the polishing pressure of the contact points between the polishing pad and the wafer. However, the result of a lighter polishing operation will result in a lower polishing rate of the wafer. In order to compensate for the loss of productivity, the entire surface of the wafer must be polished at the same time. For this reason, the contact point of the polishing pad to the wafer must be smaller in area, but it must be more in number. This practice is contrary to the practice of CMp with a relatively large contact area and a relatively small number of contact points. Therefore, in order to perform more and more gentle polishing on fragile wafers, it is necessary to reduce the number of CMP polishing defects. However, in order to avoid a drop in polishing rate, more contact points must be created. Inevitably, the roughness of the polishing pad must be finer in size and more in number. However, the finer the polishing process is, the higher the risk of scratching the surface of the wafer. To avoid the risk of scratching, the top tips of all the rough parts must be completely equal. Otherwise, a few prominent "killer roughs" will damage the polished wafer. SUMMARY OF THE INVENTION The present invention provides a cutting device that includes a pedestal that includes a plurality of individual polycrystalline (p0|yCrysta丨丨ine) cutting elements that are fixed in a solid state On the organic material layer. Each individual polycrystalline cutting element can comprise a uniform geometry. In another aspect, the present invention provides a cutting device comprising a base, a solid organic material layer is disposed on the base of the crucible, and a plurality of independent polycrystalline cutting elements are fixed on the solid organic material, and each individual polycrystalline cutting is performed. The component includes at least one cutting tip. The cutting tips of the cutting elements are aligned on a common plane. Another aspect of the present invention provides a method of forming a cutting device, comprising: obtaining a substrate; placing a plurality of independent polycrystalline cutting elements on the substrate in an uncured organic material, each of which is individually shaped and cut Element L has a substantially uniform geometry that hardens the organic material to form a layer of solid organic material such that each individual polycrystalline cutting element is secured within the layer of solid organic material. The various features of the present invention are generally described herein. Therefore, the detailed description of the present invention will be more readily understood, so that the contribution of the present invention to the technical field will be more fully understood. Further features of the present invention will become apparent from the following detailed description of the exemplary embodiments of the invention. β 200911462 [Embodiment] In the disclosure and description of the present invention, it is not limited to the specific construction, process steps disclosed later, or extended to those skilled in the relevant art. Equals? It should also be understood that the techniques used herein are for purposes of describing particular embodiments only and are not intended to be limiting. The text and the scope of the appended claims are intended to cover the singular singular singular singular singular singular singular singular singular singular singular singular singular singular One or more such elements are defined by the following terms when describing and requesting the present invention. All mesh sizes (Mesh) of mt are made according to the following proposed definitions, unless ^曰In addition, because the size of the particles in the "mesh size" can be more than a small size distribution range, the average mesh of the illusion ruler size.舻丞 祖 在 在 在 在 在 在 在 在 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系 系...'The base has limited conditions...jin aligned. For example, the profile does not include a planar profile, a concave profile, a multi-step profile, and the like. The convex section is used herein as part of the "total 4t" core-cutting element, the package 200911462 contains a measurable width across the: part, & is used to contact and eliminate one The material on the workpiece. As shown in an exemplary embodiment, a blood knife has a cutting jaw extending longitudinally on the knife, the blade being yawable relative to a workpiece from the workpiece μ 丨 + ^ 丨 - T * 丄 1 曰忑 workpiece The material is scraped or shaved to remove material from the workpiece by cutting the "edge".

在此所使用的切割「尖端」係指一在切割元件上與— 固定工具之間具一最大距離的部位’例如,其為一切钙元 件的第-部位,當本發明物品在使用日夺,該地—部位接觸 :工件。可理解的是,—切割「尖端」可包含一平面、一 太面或it緣,’、要该切割元件的平面、尖面或邊緣是該As used herein, the term "tip" as used herein refers to a portion of the cutting element that has a maximum distance from the -fixing tool, for example, which is the first portion of all calcium components, when the article of the invention is in use, The ground-part contact: workpiece. It can be understood that the cutting "tip" can comprise a plane, a face or an edge, and the plane, the pointed surface or the edge of the cutting element is

切割元件接觸一工件的楚—立L 千的弟一。卩位(附加有切割元件的切割The cutting element contacts a workpiece of Chu-Li L Qian's brother. Clamping (cutting with cutting elements attached)

裝置欲自該工件上去除材料)。 D 在此所使用&燒結」係指接合兩個兩個或更多獨立 粒子以形成-個連續的固態塊體。燒結的製程涉及結合粒 子以便至少部分地消除粒子間的空隙。燒結可發生在金屬 粒子或是鑽石等含碳粒子之間。金屬粒子的燒結依據材料 的纽成而發生在各種溫度中。鑽石粒子的燒結一般需要超 高的壓力以及作為鑽石燒結的輔助物的碳溶劑,此會在以 下有更詳細的討論。燒結輔助物通常出現在燒結的製程 中,並且有一部分輔助物殘留可能在最後成品中。 在此所使用#「超硬」可用於指任何具有莫式硬度 (M〇hr’s Hardness)達約8或或更高的結晶材料、聚晶材 料或此等材料的混合物。在某些方面,莫式硬度可達約9.5 或更高。此種材料包含但不受限於鑽石、聚晶鑽石 200911462 立方氮化蝴(cubicB〇刚, > β,CBN)聚曰曰立方氮化领(pcBN)以及該領域具熟習 技藝者所熟知的超硬材斜。和 尺w村超硬材料可以不同形式整合於 本發明之中’該形式自会古私工 、匕 3 有拉子(partiC|es)、砂礫(grjts)、 薄膜(films)、層結構(丨avprt5\堃黎 再1ayers)荨等。然而’在大部分的例子 中,本發明超硬材料係為亨The device is intended to remove material from the workpiece). D. &Sintering" as used herein refers to joining two or more separate particles to form a continuous solid block. The sintering process involves combining particles to at least partially eliminate voids between the particles. Sintering can occur between metal particles or carbonaceous particles such as diamonds. The sintering of the metal particles occurs at various temperatures depending on the material formation. Sintering of diamond particles generally requires ultra-high pressures and carbon solvents as an aid to diamond sintering, as discussed in more detail below. Sintering aids usually occur in the sintering process and some of the auxiliary residues may be in the final product. As used herein, "superhard" can be used to mean any crystalline material, polycrystalline material, or a mixture of such materials having a M?hr's Hardness of about 8 or greater. In some aspects, Mohs hardness can be up to about 9.5 or higher. Such materials include, but are not limited to, diamonds, polycrystalline diamonds 200911462 cubic nitriding butterfly (cubicB〇, > β, CBN) polyfluorene cubic nitride collar (pcBN) and are well known to those skilled in the art. Super hard material is inclined. And the super-hard material of the village can be integrated into the invention in different forms. 'This form is self-contained, 匕3 has a pull (partiC|es), gravel (grjts), film, layer structure (丨Avprt5\堃黎再1ayers)荨等. However, in most of the examples, the superhard material of the present invention is

尔与\日日超硬材料的形式,如PCD 以及P c B N材料。曹專而枯彡3、+立 1要而值仔注意的是,本揭露内容之中 敘述了傳統超硬砂鼓聚晶超硬材料之間的區別。 在此所使用白々幾何結構」係指一個透過可容易理解 與認知之數學名詞來描述的形狀。構成「幾何結構」的形 狀範例包含而不受限於立方形、多面體形(包含正多面 體)、三角形(包含等邊三角形、二等邊三角形(丨s〇sceiesAnd \dayday superhard material forms, such as PCD and P c B N materials. Cao specializes and succumbs to 3, + stand 1 and the value of attention is that the content of this disclosure describes the difference between the traditional super hard sand drum polycrystalline superhard material. As used herein, chalk geometry refers to a shape that is described by mathematical terms that are easily understood and cognitive. Examples of shapes that make up "geometry" include, without limitation, cuboids, polyhedral shapes (including regular polyhedrons), triangles (including equilateral triangles, and equilateral triangles (丨s〇sceies)

Triangles)以及三維三角形)、金 ’ 念·子形、球形、矩形、 「派」形(Pie Shape)、楔形、人角形及圓形等等。 在此所使用的「有機材料係扣亡 1」饰知有機化合物之半固態 或固態複合無晶混合物。因此,「有機材料層」以及「有 機材料基體__」可交替使用,其指有機化合物之半 固態或固態複合無晶混合物的層社棋 «V /f、、Ό構或塊體。較佳者,該 有機材料可為-由-或多單體透過聚合作用形成的聚合物 或是異量分子聚合物(Copolymer卜 在此所使用的「金屬」以及「冬八s 古金屬的」可交替使用, 且係指一金屬或是一個或以上的金®八入 4·^=: „ J氙屬合金。本案所屬技術 領域熟習技藝者可了解金屬的或含+麗 人S兔屬材枓的廣泛種類, 如鋁、銅 '鉻、鐵 '鋼、不鏽鋼、鈦、鎢、鋅、锆、鉬等 10 200911462 及其合金或化合物。 /在此所使用的「粒子」,當與—超級磨料材料連接 係指此等材料的微粒。此等粒子係可具有各例 ,擴圓形、方形、自形(―等等,二: 夏的網孔尺寸。本案領域所公知的’ 「 網孔而言,係、指每單位面積的孔洞數目。」就美國的 在此所指的「粒子」以及「砂碟」可交替使用。 在此所指的「切割元件」係敘述可自-工件上去除(切 軎'下材料的各種構造一切割元件可為 可包含複數形成於其上或其内的㈣端點、切„ 割臺面等等。可注咅的θ _ ° 刀 …面’ 11些切割端點、切割脊以及切 外至 〃塊體的複數粗糙部或是突出部所形成。此 外’一切割元件可包含_ 獨立粒子,該粒子可僅包含一形 成於其上的切割端點、切割脊以及切割臺面。 用的「格子」係指複數行方形所形成的圖形。 在匕斤使用的「機械力」係指衝擊在—物體上 —在物體内部或周圍之機 產生 力的範例可為磨:力 —此 且係指如上所述衝擊在物體上的機械力。“使用, 在此所使用#「機械應力」 離或是滑動-物體之衝擊性機械力時: 分 該機械力的抗力。在“…「 母早位面積上對抗 個音欲突hi b(p_e)」,係指一 有複數超硬研磨粒子之有機材料層的表面上的 11 200911462 輪靡。 在此所使用的「機械鍵結(bond)」以及「機械結合 (bonding)」可交替使用,且係指二物體或層結構之間主要 由摩擦力所形成的結合介面。在某些例子中,可透過擴展 結合物體之間的接觸表面積以及加入其他特定的幾何與物 理結構,例如將—物體環繞在另一物體周圍,來增加結合 物體之間的摩擦力。 在此所使料「大致上」係指一作用、特徵、性質、 狀態、結構、物品或結果之完全或近乎完全的範圍或是程 度。舉例而言’ 一物體「大致上」被包覆,其意指被完全 地包覆,或者被幾乎完全地包覆。與絕對完全程度相差之 卻確可允許偏差程度,係可在某些例子中取決於說明書内 文。然而’-般而言,接近完全時所得到的結果將如二在 絕對且徹底完全時得到的全部結果—般。t「大致上」被 使用於描述完全或近乎完全地缺乏—作用、特徵、性二 狀態、結構、物品或結果時,該使用方式亦是如前述方式 而同等地應用"例而言,一「大致上不包含」粒子二 組成物,係可完全缺多私工 ..θ , 缺乏拉子,或是近乎完全缺乏粒子而到 達如同其完全缺乏粒子的程度。換言<,只要-「大致上 不包含」原料或元件的組成物不具有可被量測得的效 該組成物實際上仍可包含這些原料或是元件。 在此所使用的厂大約」係指給予一數值範圍之端 !·生’所給予的數值可高於該端點少許或是低於該端、 許。 …夕 12 200911462 在此所使用的複數物品、結 或材料’可以-般列表方式呈現以利方便以及f 列表應被解釋為:該列表的各成員係被獨 =Triangles) and three-dimensional triangles, gold ‘ 念·子, spherical, rectangular, “Pie Shape”, wedge, human and round, and so on. As used herein, "organic material is detained 1" is a semi-solid or solid composite amorphous mixture of organic compounds. Therefore, the "organic material layer" and the "organic material substrate __" may be used interchangeably, and refer to a layered chess "V / f," Ό structure or block of a semi-solid or solid composite amorphous mixture of organic compounds. Preferably, the organic material may be a polymer formed by polymerization of - or a plurality of monomers or a heterogeneous molecular polymer ("metal" used in "Copolymer" and "winter eight s ancient metal". Alternately used, and refers to a metal or one or more gold® eight in 4^^=: „J氙 alloy. Those skilled in the art to understand the art can understand metal or contain + Li S rabbit 枓A wide variety of types, such as aluminum, copper 'chromium, iron 'steel, stainless steel, titanium, tungsten, zinc, zirconium, molybdenum, etc. 10 200911462 and its alloys or compounds. / "particles" used here, when with - super abrasive Material connection refers to particles of such materials. These particle systems may have various examples of rounded, square, and self-shaped ("etc., two: mesh size of summer." The mesh is well known in the art. Words, refers to the number of holes per unit area." The "particles" and "sand discs" referred to herein in the United States can be used interchangeably. The term "cutting elements" as used herein is described as being removable from the workpiece. (cutting the various materials of the underlying material - a cutting element can It may include (4) end points formed on or in the complex number, cutting planes, etc. The θ _ ° knives can be injected into the surface. 11 cutting ends, cutting ridges and cutting to the lumps A plurality of rough portions or protrusions are formed. Further, the 'a cutting element may include _ independent particles, and the particles may include only one of the cutting end points, the cutting ridges, and the cutting table formed thereon. The pattern formed by the square shape. The "mechanical force" used in the shackle refers to the impact on the object - an example of the force generated by the machine inside or around the object may be grinding: force - this means the impact as described above. Mechanical force on the object. "Use, when used #"Mechanical stress" or when sliding-impact mechanical force of the object: The resistance of the mechanical force. In the "..." maternal area against the sound "hib(p_e)" refers to the 11 200911462 rim on the surface of an organic material layer having a plurality of superhard abrasive particles. "Mechanical bonding" and "mechanical bonding" as used herein. )" can be used interchangeably and refers to a bonding interface formed by friction between objects or layer structures. In some instances, the surface area of contact between the bonded objects can be extended and other specific geometric and physical structures can be added, such as wrapping the object around another Around the object, to increase the friction between the bonded objects. The term "substantially" as used herein refers to the complete or near-complete extent or extent of an action, feature, property, state, structure, article or result. In the sense that 'an object is "substantially" coated, it means completely covered or completely covered. The difference from the absolute degree of completeness allows the degree of deviation, in some cases It depends on the text of the specification. However, in general, the results obtained when approaching complete will be the same as the results obtained when absolutely and completely complete. t "substantially" is used to describe a complete or near-complete lack of action, characteristics, sexuality, state, structure, or result, which is also applied in the same manner as described above. "Substantially does not contain" the particle two composition, which can be completely lacking in private labor.. θ, lack of pull, or almost completely lack of particles to reach the extent that it completely lacks particles. In other words, as long as - "substantially does not contain" the composition of the material or component does not have an effect that can be measured. The composition may actually contain these materials or components. "Factory used herein" means giving a value to the end of the range of values. The value given can be higher or lower than the end point. ... 夕 12 200911462 The plural items, knots or materials used herein may be presented in a general list for convenience and the f list shall be interpreted as: the members of the list are solely

獨特的成員。因此,基於此列表的成^現J 有 反面的才曰不,此列表中的各成員均不;*被_ 為與同列表中的任何其他成員相同的。 ^皮解釋 呈現濃量以及其他數Μ料可以—範圍形式表達戍 用,因ST,此範圍形式僅僅為了方便與簡潔而使 因此該把圍形式應該被彈性地解釋為不 楚描述以作範圍限制的數值,亦包含在該範圍中的 立數值以及子範圍。目此,在此數 ^如2,3及4,子範圍,例:= 等,以及1、2、3、4及5。 寺 ::同的原則應用於作為最小值或最大值的單—數 4外,不論所描述範圍或特徵的幅 用這樣的解釋。 巾田度為何’都應該採 本發明 ::明提供一種切割裝置及其相關製法 割或影響一工件以自去該工件上去除心 裝整光滑及/或平坦的表面。本發明切割 纟地被使用’例如作為平创震置以自工 下材料,作為整修裝置以整修各種工 置以拋光各種工件。 彳…為拋光裝 在本發明第一 A與一 B圖所顯示的實施例中,提供— 13 200911462 切割裝置(10a)(例如碟盤),其包選擇性含一基座(12a), 该基座(12a)可包含一設置、附加或連接在基座(12a)上的 固悲有機材料層(第_ B與二B圖的(14))。在該固態有 ,材料層上可固設有複數獨立聚晶切割元件(16a)。各獨立 水日日切割元件係可具有或顯示—大致上一致的幾何結構, 例如》亥十刀A 4牛的幾何結構彳大致上與其他切割元件的幾 何釔構一致。在第_ B圖所顯示的實施例中,各獨立聚晶 切割元件(16a)具有-個大致上為立方形的幾何結構。在第 二B圖所顯示的實施例中,獨立聚晶切割元件〇6b)具有 一幾何結構,該幾何結構可為三維三角結構。 第B兵一B圖所顯示,在本發明某一方面,該等 獨立聚晶切割元件(16a)(16b)可包含至少一切割尖端 (18a)(18b) ’料切割元件的切割尖端可對齊在一共同平 面(2〇a)(20b)上。在此例子中,該共同平面係為__平坦面 而具有-在該固態有機材料基體上的預設高度。因此,該 等獨立聚晶切割元件可透過”精確的方法被固定在固態 有機材料層内,以致於該等切割元件接觸一工件(圖中未 不)時令各切割元件可以大致上相同的深度自該工件去除 材料。以此方式,當該切割裝置相對一工件移動時,各獨 立聚晶切割元件大致上遭受相同程度的阻力。本發明的此 項特徵y有益地限制獨立切割元件提早脫落而可能因此縮 紐I具壽命,及/或損壞被加工之工件的問題。 該獨立切割元件(16a)(16b)可以多種材料形成,在一 實施例中,可包含聚晶材料或是超硬聚晶材料。雖不必然 14 200911462 侷限於此,該超硬聚晶材料可為聚晶鑽石(p〇丨 Diamond, PCD)緻密結構或是聚晶立方氮化观 (Polycrystamne cubic Boron,N_e,PcBN)緻密結構。 該PCD或是PcBN緻密結構可以多種如下詳述的^料 成。藉由以聚晶材料形成獨立切割元件,並且將獨立切叫 元件^別附加到該切割裝置上,可以不需要以聚晶材料^Unique member. Therefore, based on the fact that this list has the opposite, none of the members in this list are; * is _ the same as any other member in the same list. The skin interpretation shows that the concentration and other data can be expressed in the form of range. Because of ST, this range is only for convenience and simplicity. Therefore, the form should be flexibly interpreted as not limited to the scope. The numerical values also include the numerical values and sub-ranges in the range. For this reason, the numbers ^, such as 2, 3, and 4, sub-ranges, examples: =, etc., and 1, 2, 3, 4, and 5. The principle of the sameness of the temple: is applied to the single-number 4 as the minimum or maximum value, regardless of the extent of the described range or feature. The present invention is directed to a cutting apparatus and associated method for cutting or influencing a workpiece to remove a smooth and/or flat surface from the workpiece. The cutting blade of the present invention is used, for example, as a flattening device for self-working materials, as a refurbishing device to refurbish various work to polish various workpieces.彳...for polishing in the embodiment shown in Figures 1A and B of the present invention, there is provided a cutting device (10a) (e.g., a disk) having a base (12a), the package optionally comprising a base (12a), The pedestal (12a) may include a layer of solid organic material disposed (attached to or attached to the susceptor (12a) ((14) of Figures B and B). In the solid state, a plurality of individual polycrystalline cutting elements (16a) may be fixed to the material layer. Each of the individual water day cutting elements can have or exhibit - a substantially uniform geometry, such as the geometry of the Hei 10 knife A 4 cow, substantially conforming to the geometry of the other cutting elements. In the embodiment shown in Figure BB, each individual polycrystalline cutting element (16a) has a substantially cuboidal geometry. In the embodiment shown in Fig. B, the individual polycrystalline cutting element 〇 6b) has a geometric structure which may be a three-dimensional triangular structure. As shown in Figure B, in one aspect of the invention, the individual polycrystalline cutting elements (16a) (16b) may comprise at least one cutting tip (18a) (18b) 'The cutting tips of the cutting elements are aligned On a common plane (2〇a) (20b). In this example, the common plane is a flat surface having a predetermined height on the solid organic material substrate. Thus, the individual polycrystalline cutting elements are affixed to the solid organic material layer by a "precise method" such that the cutting elements contact a workpiece (not shown) such that the cutting elements can be substantially the same depth The material is removed from the workpiece. In this manner, each of the individual polycrystalline cutting elements substantially suffers the same degree of resistance as the cutting device moves relative to a workpiece. This feature of the present invention advantageously limits the early cutting of the individual cutting elements. There may be problems with the life of the shrinkage I and/or damage to the workpiece being machined. The separate cutting element (16a) (16b) may be formed from a variety of materials, in one embodiment, may comprise a polycrystalline material or a superhard poly Crystal material. Although not limited to 14 200911462, the superhard polycrystalline material can be a dense crystal of polycrystalline diamond (PCD) or a polycrystalline cubic boron nitride (Polycrystamne cubic Boron, N_e, PcBN). Dense structure. The PCD or PcBN dense structure can be formed as follows. By forming a separate cutting element in a polycrystalline material, and independently cutting the component ^ Attached to the cutting means may not be required to polycrystalline material ^

成切割裝置上不被使用於切宝丨& A 个服便用於切割的部分,即可達成聚晶切叫 &件的有利特性。因此’可達到節省可觀的成本。 ° 本發明切割裝置可有多種應用,且在一發明中,係特 7良好地適用於平创脆弱易損的材料,例如石夕晶圓、玻璃 、曰金屬、使用過而欲進行平整化以时制㈣晶圓、 二:板(LC.D)玻璃、發光二極體(led)基板、碳化石夕 夢等等η在:咖Μ )晶圓、石英晶圓、氮切以及氧化 固 ==晶圓製程技術中’欲進行抛光的晶圓係 力:該載具設置在一拋光塾上,該拋光墊附 旋轉平台上。當拋光液設置於該抛光塾上且對 ;:r因力時,透過載具與旋轉平台的相對運動對晶圓進 行研磨或是:光:::圓基本上受到極精細的研磨材料進 :次疋拋先而達到一相當光滑的表面。 田已成功元成晶圓的某此研磨 料進行研磨的過"主火作時,在對晶圓等材 的持料碎片,此導致所完成的工作少… 點(二=該研磨製程利用研磨材料上極尖的 心相對彼此不會在—水平上)來局部化壓力以 15 200911462 便令研磨料自一工件上去除材料。The cutting device is not used in the part of the cuttings and a part of the service for cutting, and the advantageous characteristics of the polycrystalline cutting device are achieved. Therefore, considerable savings can be achieved. The cutting device of the present invention can be used in various applications, and in one invention, the special 7 is well-suited for flat and fragile and fragile materials, such as Shi Xi wafer, glass, base metal, and used for flattening. Time (four) wafer, two: plate (LC.D) glass, light-emitting diode (led) substrate, carbon carbide, etc. η in: curry) wafer, quartz wafer, nitrogen cutting and oxidation solid = = Wafer technology in the wafer process technology: The carrier is placed on a polishing pad attached to a rotating platform. When the polishing liquid is disposed on the polishing crucible and the pair: :r is force, the wafer is ground by the relative movement of the carrier and the rotating platform or: the light::: circle is substantially subjected to the extremely fine abrasive material: The second time throws first to reach a rather smooth surface. Tian has succeeded in the grinding of one of the abrasives of the Yuancheng wafer. When the main fire is made, the scraps of the wafers and the like are held, which results in less work done... (2 = use of the grinding process) The sharp points on the abrasive material are not at the level relative to each other to localize the pressure to 15 200911462 to cause the abrasive to remove material from a workpiece.

本發明PCD或是p DM 刀副元件一般為超硬材質,此 令切割元件緊迫於一3曰圄μ + 此 曰隹+ #曰 曰囫上時不易變形。由於硬度係為能 罝集中度的度置單位,也丨ί . ,母單位體積的能量,本發明 PCD或PcBN緻密結構 ^ 再係T木中此量到一個非常小的體積 而不會知壞。由於該箄好极 ,n 材枓具有以極少原子構成邊緣的能 力’因此S玄專材料係可维垃 , J、准持—極尖的切割邊。 不必然如此,惟力楚 Λ __ ί 第—Α圖所示的本發明一實施例中, 該等獨立聚晶切割亓杜Μ β ^件(16啦以格狀圖形的形式,例如方 形圖开> ’被配置於該有機 __ 機材料層或基座之内或之上。該等 切割元件可以彼此均句地I 1 Ί地相間隔而具有一大約1 00到大約 800 微米(microη)的門 . …)間距(d)。在本發明某-方面,該等獨 立水日日切割元件可以姑认 勻勻地相間隔而具有一大約500 k米的間距(d)。 :第二A圖所顯示的實施例中’該等獨立聚晶元件陶 °,以禝數同心圓的形式被配置於該有機材料層或基座之内 或之上。在上述的實施例 員她灼之中,忒專獨立切割元件可以彼 匕句勻地相間隔而具有一女的丨丄y 有大力1〇〇到大約800微米的間距 在本發明-方面,該等獨立聚晶切割元件可以彼此均 蔣:相間隔而具有_大約5〇〇微米的間距⑷。藉由均勻地 切割元件相互間隔’在切割製成中施加於切割元件 的阻力可均勻地分佈在每一 母個切割70件中,此則消除或減 ^ 一個或更多的獨立切割元件提早脫落的風險。一個或更 多的獨立切割元件的提早脫落可導致被處理工件的嚴重損 16 200911462 害。 藉由將-獨立聚晶圓切割元件配置在— 令衝擊在任何獨立聚晶切割元件的機械應力最’,a 幅增進該獨立切割元件保留在有機材料層上的程产:大 減少衝擊在各獨立切割元件上的壓力,獨::由 在保留在固態有機材料層上,特別是針對需要 小心處理的作業。 I打而要 可考慮多種結構與配置來將作用在研磨工 件的機械應力最小化。此外,對於上述關 =的參數可包含元件自該有機材料層突出的相對高度。 -突出而明顯高於其他切割元件的切割元件將:: 擊性機械力’且因此更易於自固態有機材料層: :。因此’相較於不具均句高度分佈之切割元件的研磨工 具之下,具均勻高度分佈之切割元件的研磨工具可作用於 更有效地維持研磨工具的完整度。 某方面,大致上所有的獨立切割元件可在有固態 才料層上大出達一預設高度。儘管任何對研磨或切割 工2有用的預設高度均會在本發明範疇被列入考慮,在一 特疋方面’ t用於研磨一工#時,該預設高度可產生一少 於大約20微米的切割深度。在另一特定方面,當用於研 磨—工件時,該預設高度可產生一從大約1到大約2〇微 p勺刀。丨/衣度。在又一特定方面,當用於研磨一工件時, /預°又呵度可產生一從大約1 0到大約20微米的切割深 又在又一特定方面,該預設高度可產生一達到或是高於 17 200911462 50或1 00微米的切割深度 1 v /又丄叼于鳘程 度可視切割元件之間隔而定。換言之,切割元件之間相離 越遠,各切割元件所受到的衝擊力影響越大。因此,增加 切割元件間隔的圖形可得益於預設高度的微小變動。The PCD or p DM knife sub-component of the present invention is generally a super-hard material, which makes the cutting element less prone to deformation when pressed against a 3 曰圄 μ + 曰隹 + #曰 。. Since the hardness is the unit of the concentration of the enthalpy, and the energy per unit volume, the dense structure of the PCD or PcBN of the present invention is re-lined to a very small volume in the T wood without any knowledge. . Since the 箄 is very good, the n-material has the ability to form an edge with few atoms. Therefore, the S-material is a virgin, J, and a very sharp cutting edge. It is not necessary to do so, but in an embodiment of the invention shown in the figure __ ί, the independent polycrystalline cutting 亓 Μ Μ β ^ pieces (16 in the form of a grid pattern, such as a square figure > 'is disposed within or on the organic material layer or pedestal. The cutting elements can be spaced apart from one another to have a range of from about 100 to about 800 microns. The door. ...) spacing (d). In one aspect of the invention, the individual water day cutting elements can be evenly spaced to have a spacing (d) of about 500 k meters. : In the embodiment shown in Figure 2A, the individual polycrystalline elements are disposed in or on the organic material layer or pedestal in the form of concentric circles. In the above embodiment, her independent cutting elements can be evenly spaced apart from each other to have a female 丨丄y having a pitch of about 1 〇〇 to about 800 μm. In the aspect of the present invention, The individual polycrystalline cutting elements can be spaced apart from one another and have a spacing (4) of about 5 microns. By uniformly cutting the elements to each other' the resistance applied to the cutting element in the cutting process can be evenly distributed in each of the female cuttings 70, which eliminates or reduces one or more of the individual cutting elements from falling off early. risks of. Premature shedding of one or more independent cutting elements can result in severe damage to the workpiece being processed. By arranging the -individual poly-wafer cutting element in the most mechanical stress of any individual polycrystalline cutting element, the a-frame enhances the process of retaining the independent cutting element on the organic material layer: a large reduction in impact The pressure on the individual cutting elements, alone: is retained on the solid organic material layer, especially for operations that require careful handling. I can consider a variety of structures and configurations to minimize the mechanical stresses acting on the grinding workpiece. Furthermore, the parameters for the above-mentioned off = may include the relative height at which the elements protrude from the layer of organic material. - Cutting elements that protrude significantly above the other cutting elements will:: damaging mechanical forces' and thus easier to self-solid organic material layers: . Thus, under the abrasive tool of a cutting element that does not have a uniform height distribution, an abrasive tool having a uniform height-distributed cutting element can act to more effectively maintain the integrity of the abrasive tool. In one aspect, substantially all of the individual cutting elements can be raised to a predetermined height on the solid state layer. Although any preset height useful for the grinding or cutter 2 will be considered in the context of the present invention, the preset height can produce a less than about 20 in a special aspect. Micron cutting depth. In another particular aspect, the predetermined height produces a knife from about 1 to about 2 inches when used for grinding a workpiece.丨 / clothing. In yet another particular aspect, when used to grind a workpiece, the /pre-degree can produce a depth of cut from about 10 to about 20 microns. In yet another particular aspect, the predetermined height can produce a reach or It is higher than 17 200911462 50 or 100 μm of cutting depth 1 v / and depending on the degree of visible cutting elements. In other words, the farther apart the cutting elements are, the greater the impact of the impact forces on each cutting element. Therefore, the pattern of increasing the spacing of the cutting elements can benefit from small variations in the preset height.

切割元件自固態有機材 複數不同高度,且該高度沿 有益效果。指定剖面是可以 而有多種結構的。在一方面 平坦的剖面中,所有切割元 平整的。重要的是,雖然這 面’在切割元件之間可允許 某種高度偏差。 料層上突出達一預設高度或達 著 ^日疋的剖面,此亦可達到 根據研磨工具的特定使用方式 ,該指定剖面可為一平面。在 件的最高突出點係預期為大致 些點可較佳地對齊於一指定剖 因為製程本身的限制而產生的 -斜度。具有斜面的工呈 “曰m、有 元件而衝擊於該工具上:::力用於f均勻地散佈透過切割 I或是CMP拋光塾整修器其是對碟盤型磨沙機 的較大的向下力量可抵銷周錄較尚的令央部位所提供 切副兀件在該位置上所受的 ^ 工具中央點到周緣點間呈連:、因此’ s亥斜度可自 因而僅出現在工具的一部分上者呈不連續狀態, -或複數斜度。在某些方面,,门樣地,-工具可具有單 緣點的方向傾斜,或者其^可沿著自中央點到周 斜。 σ者周緣點到中央點的方向傾 18 200911462 可考慮各種對固態有機材料層工具有 明申請專利範圍並不意圖 ^ 碎闺极限制於某些特定斜度,因此在 卉夕不同的工具中可以有各種斜度。 拋光墊整修器可有益地具有一 ,一 ρ ^ ^. ,μλ 自中心到周緣的斜度,該斜 度+均為1/1000。 =工具的一種變形例具有—斜度時,在某些方面,指 面可/、有弧形。舌亥弧形的一個特定實施例係半球 :(〇me)工具。此弧形剖面作用類似於斜面。工具可包含 :、的弧开v aj面以為了能更有效率地將摩擦力分佈於所有 切m牛之間’因而減少獨立粒子的衰敗失效 具壽命。 如同已在此所敘述的,雖然其意圖限制切割元件的的 尖端沿著指定剖面對齊’仍然可發生某些偏差程度。這此 偏差係來自於工具製程的結果。由於可能使用在工具上的 切割兀件的形狀及尺寸被給予廣泛的變化,因此這些偏差 可高度地取決於特定的應用。此夕卜,當提及指定剖面時, 要注意「尖端」—詞意圖包含一 士刀割元件的最高突出點, 不哪β亥點為一頂點、邊緣或是面。方向定位、尖端平整度、 、及”他操縱超級磨料粒子的技術係進一步揭露於在2〇〇5 年9月9日申凊的美國第)1/223,786號專利申請案以及 在2007年4月1〇日申請的美國第)1/733,325號專利申 請案’兩件皆整合於此以作參考。 就其本身而言,在一方面該等切割元件大多數被配置 乂 7切剎元件尖端偏離指定剖面,偏離程度從大約1到大 19 200911462 。在另—方面,該等切割元件係被配置《令它 二:=指定劍面,而偏離程度從大約5到大約1〇。 離指定剖面彳面’切割元件係被配置以令它們的尖端偏 :而偏離程度從大約10到大約75微米。在又 判面,而等切割元件係被配置以令它們的尖端偏離指定 ° 程度從大約10到大約50微米。在另一方 切割元件係妯勒恶Λ 力面 ,、被配置以令它們的尖端偏離指 程度從大約5。到一微米。在另一方面,切= -置:< 7匕們的尖端偏離指定剖面,而偏離度 約二到…。。微米。在又一方面,切割元件係被二 心匕們的太端偏離指定剖面,而偏離程度從大約到 大約50微米。 在另一方面,該等切割元件係被配置以令它們的尖端 偏離指定剖面’而偏離程度從大約2〇到大約4〇微米。此 外,在另-方面,該等切割元件係被配置以令它們的尖端 偏離指定剖面,而偏離程度少於大約2〇微米。在另一方 面,該等切割元件係被配置以令它們的尖端偏離指定剖 面,而偏離程度少於大約10微米。在又一方面,該等切 割元件係被配置以令它們的尖端偏離指定剖面,而偏離程 度少於大約5冑米。在又一方面,該等切割元件係被配置 以令它們的尖端偏離指定剖面,而偏離程度少於大約1微 米。在另-方面,大多數的切割元件係被配置以令它們的 尖蚝偏離指定剖面,而偏離程度大約低於切割元件平均尺 寸的10%。 20 200911462The cutting elements are of a different height from the solid organic material and this height is beneficial. The specified profile is versatile and has a variety of configurations. In a flat profile on the one hand, all cutting elements are flat. It is important that although this side allows for some height deviation between the cutting elements. The profile is projected to a predetermined height or a profile of the day, which can also be achieved according to the particular use of the abrasive tool, which can be a plane. The highest point of the feature is expected to be approximately aligned with the slope of the specified profile due to the limitations of the process itself. The work with the bevel is "曰m, with components striking the tool::: force for f evenly spread through the cutting I or CMP polishing 塾 dresser which is larger for the disc type sander The downward force can offset the cut-off element provided by the central part of the weekly record. At the position, the center point of the tool is connected to the peripheral point: therefore, the slope of the s-hai can be self-existing. Now part of the tool is in a discontinuous state, - or a complex slope. In some respects, the door can be tilted in the direction of a single edge, or it can be along the slope from the center to the circumference. σ The circumference of the rim is inclined to the center point. 18 200911462 Various types of solid organic material layer tools can be considered for patent application. It is not intended to be limited to certain slopes, so it can be used in different tools. There are various slopes. The polishing pad dresser can advantageously have a slope of ρ ^ ^. , μλ from the center to the circumference, and the slope + is 1/1000. = A variant of the tool has a slope In some respects, the finger can be /, has a curved shape. A particular embodiment of the shape is a hemisphere: (〇me) tool. This arc profile acts like a bevel. The tool can include: an arc opening v aj face in order to distribute friction more efficiently across all cut m Between cattle thus reducing the decay of the individual particles has a lifetime. As already described herein, although it is intended to limit the alignment of the tip of the cutting element along a specified profile, some degree of deviation can still occur. As a result of the tooling process, since the shape and size of the cutting elements that may be used on the tool are widely varied, these deviations can be highly dependent on the particular application. Note that "tip" - the word intent contains the highest point of a knife cutting element, not the β point is a vertex, edge or face. Directional Positioning, Tip Flatness, and "The Department of Technology for Manipulating Super Abrasive Particles is further disclosed in the US Patent No. 1/23,786 filed on September 9, 2005 and in April 2007. U.S. Patent Application Serial No. 1/733,325, the entire disclosure of which is incorporated herein by reference. The specified profile, with a degree of deviation from approximately 1 to a large 19 200911462. On the other hand, the cutting elements are configured to "make it two: = specify a sword face, and the degree of deviation is from about 5 to about 1 〇. The face cutting elements are configured to bias their tips: and the degree of deviation is from about 10 to about 75 microns. In addition, the cutting elements are configured such that their tips deviate from the specified degree by about 10 to About 50 microns. On the other side, the cutting elements are 妯 Λ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Their tips deviate from the specified section The face, and the degree of deviation is about two to a few micrometers. In yet another aspect, the cutting element is offset from the designated end of the center of the two cores by a degree of deviation from about to about 50 microns. The cutting elements are configured such that their tips deviate from the designated profile 'with a degree of deviation from about 2 〇 to about 4 〇 microns. Further, in other aspects, the cutting elements are configured such that their tips are offset from the designated profile, The degree of deviation is less than about 2 microns. In another aspect, the cutting elements are configured such that their tips are offset from the designated profile by less than about 10 microns. In yet another aspect, the cutting elements are Arranged such that their tips deviate from the specified profile with a degree of deviation of less than about 5 mm. In yet another aspect, the cutting elements are configured such that their tips are offset from the designated profile by less than about 1 micron. In other aspects, most of the cutting elements are configured such that their tips are offset from the designated profile by about 10% less than the average size of the cutting elements. 00911462

切割元件尖端自有機固定物所延伸之距離的決定係項 考量切割元件自該固定物往上延伸的長度與切割元件沉入 固定物表面以下的深度的相較程度。在第一 A盥―R 顯示的實施例中,各切割元件(1 6a)突出於固定物之上的量 與沉入結合物之下的量的比例係大約4比1。在第二A與 二B圖中的實施例中,切割裝置(10b)各切割元件(i6b)的 大約2/3下沉’而大約1/3突出。其他的比例可以是由2〇 比1到大約0 · 2比1 ’亦包含中間範圍。The determination of the distance the tip of the cutting element extends from the organic fixture takes into account the extent to which the length of the cutting element extends upwardly from the fixture to the depth below which the cutting element sinks below the surface of the fixture. In the first embodiment shown by the first A-R, the ratio of the amount of each cutting element (16a) protruding above the fixture to the amount below the sinking conjugate is about 4 to 1. In the embodiment of Figs. 2A and 2B, about 2/3 of each cutting element (i6b) of the cutting device (10b) sinks by about 1/3. Other ratios may range from 2 〇 to 1 to about 0 · 2 to 1 ' and also include the intermediate range.

稽田將 ^ v π叩风型,切割 元件(16a)(1 6b)上相對大的部分可沉入於有機固定物二 下。以此方式,提供最大截面以結合固定物材料的面積係 「埋藏」纟最大量的固定物之下。此項本發明特徵,即是 粒子的最寬部⑯(切割元件的最大截面)係較接近粒子: —端而離另一端較遠,@而較寬的一端可以被設置 機基體的表面之下’相較於傳統的鑽石、人工鑽石或是灿 蝶,可提供極大的保留效益,傳統砂碟的最大截面集中^ 近於砂礫的中點’ &因此被設置在 :定:本發明該最寬部位可在或是靠近== 作而(例如切割端)最遠的一端上。 ”了圖式上所顯示的切割元 例t,該箄 〜狀在本發明一實施 、d凡件係為角錐开j (金字1 , 發現此種結構i ^)。本發明人 件將體積/質旦β 〇角錐狀的切割元 確保切割元件 件的取低部位, 件可以更穩固地被固定在任何形態的基座(例 21 200911462 如,切割工具)上,該基座供 兀件、纟。合、整合或連接於該 :藉由令角錐上形成有三角基底,角錐上的 支撐性基底可相對尖端更厚重, 立且々乂端更尖銳(例如, 60幻而不會在CMP拋光塾進行整修時損毀或斷裂。 一般而言,更尖銳的切割㈣尖端可對抛光塾進行更 快速的=,以便相對應減少總整修時間。此外,抱光塾 上的粗板部亦更力U尖銳以及@ | ϋ日U 匕等粗㈣可抛光晶 f 圓’/或更快速整修拋光塾而不引起非預期的晶圓不均 勻狀況。或者’方形角錐可使用於較低的切割速率,方带 角錐的尖端角度可更大(例如,90度)。因此,方形角錐 創造一較寬的切割路徑,該切割路徑具有較大阻力且較低 =切割速率。然而,方形PCD切割器可相較傳統具有從9〇 度到125度等不同尖戚 -手小『』心角度之早晶鑽石砂礫來的更 因此,角錐狀聚晶材料—般而言為更有效率的切割写,而 二角錐狀(具有三個側面)聚晶材料則尤其有效率。 \ 此外,本發明切割元件可以非常緊密控制的幾何 而製造,聚晶切割元件在切割拋光墊時較不會撕裂:光 墊。此外’在主要切割元件上形成有額外的第 ==件:較好的表現。換言之,切割表面的鑛齒I 可增進切割元件的切割作用。反言之,單晶砂碑 t常光滑,因此其會令抛光塾產生很大的塑性變形而撕; 被切下的「碎片」。應注意的是 、 "口 J 7G件的不賴則 表面額外地加強了有機材料層的保留度(固^程 不規則表面使得有機材料可較大程度地「抓住二割元= 22 200911462 而較抓住具光滑表面的單晶切割元件來強。 此外,拋光墊整修器時常在整修拋光墊時,令工作負 載不均勻地分佈在切割元件上。尤其,外邊緣的切割元件 通常必須執行大部分的切割工作,内側的元件並無遭受相 同程度的應力。本發明因應此問題的一方法是令「外側」 的切割元件’例如PCD砂礫(例如,#近切害彳或修整1 具外周緣的切割元件)更加堅固,且/或内側切割些 微高於(例如高出大約10微米)外側切割元件。外側: 割元件可以較大密度設置在該切割工具上,例如,它們可 以更靠近彼此,且/或被定位在較低的高度。以此設計, 切割元件可不以格狀形式分部,而可包含一複數可:放射 狀對稱的同心圓。 ' 在本發明-實施例中,在該等外側元件上可形成有相 對切割尖端更大的基底(在一方面外側元件可具有三角美 幻,外側元件可具有—形成在切割尖端上的邊緣而不: 僅是-個端點。此外’最外侧的切割元件可具有一形成在 該切割尖端上的小臺面(5Q微米)而不是僅僅有__直線邊 緣或是端點,該臺面可以其邊緣切割拋光墊。 在本發明-實施例中,該等切割元件可為不對稱的角 錐。舉例而言’由於切割力一般係由「外側自内側」作用, 該角錐設計可具有-相對較陡山肖的斜壁來面對切割裝置的 1 卜周緣’而具有—相對較平緩的斜面來面對尾側(由水平面 π起十度)。換D之’角錐尖端上的頂面部位可不為水平, 而可些微向内「傾斜」,x令碎片更容易脫落。本發明此方 23 200911462 面不同於鑽石砂礫切宝丨丨埶 dJ墊,傳統切割墊具有負角度 劲士: 也丨丄旦丄》Ji Tian will be a v π hurricane type, and a relatively large portion of the cutting element (16a) (16b) can sink under the organic fixture. In this way, the largest cross-section is provided to bond the area of the fixture material under the "buried" maximum amount of fixture. The feature of the invention is that the widest portion 16 of the particle (the largest section of the cutting element) is closer to the particle: the end is farther from the other end, and the wider end can be placed below the surface of the machine base 'Compared to traditional diamonds, artificial diamonds or candies, it can provide great retention benefits. The maximum cross-section of traditional sand discs is close to the midpoint of the gravel' & therefore, it is set at: The wide portion can be at or near the end that is the farthest from the == (for example, the cutting end). The cutting element example t shown on the drawing is in the embodiment of the present invention, and the d-shaped part is a pyramidal opening j (golden word 1 and found such a structure i ^). The inventor will be volume/quality Once the beta-corner-shaped cutting element ensures the lowering of the cutting element, the piece can be more securely fastened to any form of base (Example 21 200911462, for example, a cutting tool) that supplies the jaws, jaws. Coupling, integrating or joining: by forming a triangular base on the pyramid, the supporting substrate on the pyramid can be thicker than the tip, and the ends are sharper (for example, 60 phantoms are not performed in CMP polishing) Damage or breakage during refurbishment. In general, a sharper cut (4) tip can make the polished 更 faster = in order to reduce the total refurbishment time. In addition, the thick plate on the hull is also more sharp and @ | ϋ日 U 匕等粗 (4) Polishable crystal f round '/ or faster refining polishing 塾 without causing unintended wafer unevenness. Or 'square pyramid can be used for lower cutting rate, square with pyramid The tip angle can be larger (for example 90 degrees). Therefore, the square pyramid creates a wider cutting path with greater resistance and lower = cutting rate. However, the square PCD cutter can be different from 9 to 125 degrees compared to the conventional one. The sharp-shaped hand-shaped "heart" angle of the early crystal diamond gravel is more so, the pyramidal polycrystalline material - generally speaking for a more efficient cutting, while the pyramidal (with three sides) polycrystalline material In particular, the cutting element of the invention can be manufactured in a very tightly controlled geometry, the polycrystalline cutting element being less tearable when cutting the polishing pad: a light pad. In addition, an additional number is formed on the main cutting element. ==Parts: Better performance. In other words, the mineral tooth I on the cutting surface can improve the cutting action of the cutting element. In other words, the single crystal sandstone t is often smooth, so it will cause a large plastic deformation of the polishing crucible. Tear; the "fragment" that has been cut. It should be noted that the surface of the "mouth J 7G piece additionally enhances the retention of the organic material layer (the fixed surface of the solid surface allows the organic material to a large extent " The second cut element = 22 200911462 is stronger than the single-crystal cutting element with a smooth surface. In addition, the polishing pad dresser often distributes the polishing pad unevenly on the cutting element when refinishing the polishing pad. The cutting element of the edge usually has to perform most of the cutting work, and the inner element does not suffer the same degree of stress. One method of the present invention in response to this problem is to make the "outer side" cutting element 'for example PCD grit (for example, #近切The outer cutting element is more robust and/or cut slightly above (eg, about 10 microns higher). The outer side: the cutting element can be placed on the cutting tool at a greater density. For example, they may be closer to each other and/or positioned at a lower height. In this design, the cutting element may not be divided in a lattice form, but may comprise a plurality of: a radially symmetric concentric circle. In the present invention - an embodiment may be formed on the outer members with a larger base relative to the cutting tip (on the one hand the outer member may have a triangular illusion and the outer member may have an edge formed on the cutting tip) No: only one end point. Furthermore, the 'outermost cutting element can have a small mesa (5Q micron) formed on the cutting tip instead of just the __ straight edge or end point, which can have its edge Cutting the polishing pad. In the present invention-embodiment, the cutting elements may be asymmetrical pyramids. For example, 'the cutting force generally acts from the outer side to the inner side, and the pyramid design may have a relatively steep mountain. The oblique wall of the shaws faces the 1 circumference of the cutting device and has a relatively gentle slope to face the tail (10 degrees from the horizontal plane π). The top surface of the tip of the pyramid is not horizontal. , and can be slightly "slanted" inward, x makes the fragments easier to fall off. The side of the invention 23 200911462 is different from the diamond gravel cut treasure dJ pad, the traditional cutting pad has a negative angle of the right: "

,,s*,/v 〇g ^ ^ 只 /Λ. 3^Χ yJV 撕裂或切割力量中疊力σ古4卞ρ l 有私 Μ 力量(C〇mpressjve Force)。 此本發明實施例,可人 7刀割日守不會伴隨大量擠壓力量,因 此可更容易移除拋光墊上的「碎片」。 換言之,本發明令士夕 — 大夕數的能量耗費在切割上,而非 化費在塑性變形上。驻士 + & 错由在角錐上形成垂直壁而令角錐的 垂直壁略小於90彦r , 如,大約8 〇度)可增進上述的優 點。在此例子中,角餘力# 月錐在$面上的頂面部位可以更尖銳, 類似於一颠倒角錐。此姓 此、、,α構可增進切割墊的切割效率,此 乃由於以正角度勃;^千免丨& + J釦序,類似於以剃刀進行刮鬍的, s*, /v 〇g ^ ^ only /Λ. 3^Χ yJV tearing or cutting force in the ligament σ ancient 4卞ρ l private Μ strength (C〇mpressjve Force). In this embodiment of the invention, the 7-knife cut-off is not accompanied by a large amount of squeezing force, so that it is easier to remove the "shards" on the polishing pad. In other words, the present invention makes it possible to spend energy on the cutting, rather than the plastic deformation. The sergeant + & error is formed by forming a vertical wall on the pyramid and making the vertical wall of the pyramid slightly smaller than 90 yan, for example, about 8 )). In this example, the corner residual #月 cone can be sharper on the top surface of the $face, similar to an inverted pyramid. This surname, this, α structure can improve the cutting efficiency of the cutting pad, which is due to the positive angle of the horn; ^ thousand free 丨 & + J buckle order, similar to shaving with a razor

方式。此種設計不可能播田„D b才木用早日日鑽石設計,因為與此設the way. This kind of design is impossible to broadcast the „D b wood with the early diamond design, because with this design

有關的切割邊總是按用备# L 您。疋知用負角度。本發明角錐狀切割元件可 提供正切割邊,由於該正 凡件了 較平##辟遺以形成在切割介面尾側的 較+ .、友斜J (例如,角錐的^ ^ ^ ^ ^ 开耵稱狀)支撐正切割邊的妗 構,因此正切割邊不會過早衰敗失效。在 ° 非對稱結構可由% t k枚的The relevant cutting edge is always used #L you. I know that I use a negative angle. The pyramidal cutting element of the present invention can provide a positive cutting edge, since the positive piece is relatively flat to form a more +. on the tail side of the cutting interface (for example, ^ ^ ^ ^ ^ of the pyramid) The nickname) supports the structure of the cutting edge, so the cutting edge does not fail prematurely. The ° asymmetric structure can be % t k

, 由線切割放電加工(W丨>e E丨ectN 哪…物9,衡e-_)所形成,且1可 宝而令角錐的尖端頂部具有端點、邊緣或臺面。此外,當士 割元件係為獨立粒子啖石少摔日车 田刀 双卞:¾ V噪時’此粒子或砂 的結構,包含上述以旦偌用机t 缔了,、有預期 m相具傷用於加工pcT粒子之適當 換具所形成的非對稱結構。 之 在本發明一實施例令,可調整該 i77 ί,Ι ^ Wb 寸月維之間心3以調整 議點、邊緣或臺面的接觸壓力一般而 相隔越遠’角錐與議之間的接觸壓力越大。因、:彼: 24 200911462 f 越少尖端來支揮應力,各尖端刺入的深度越深,而在拋光 塾上所形成的粗糙部越大。一般而言,晶圓的抛光速率取 決於粗撻部的尺寸與數量。較密較小的粗糙部與較稀疏較 大的粗糙部有相當的拋光速率。但前者較為均勻,不會產 生過度的力量導致脆弱晶圓產生不均勾、刮傷、侵钱或是 Μ等問題。當適用在小於9〇冑米(nm)的鋼以及具低介 電常數(Low-K)且有大於20%細孔(p〇re)的介電質時,前述 較小較密的粗糙部的功效更為顯著真確。 該等獨立聚晶切割元件可以相關領域中具有通常技藝 者所知道的各種方式及各種材料形成。在本發明一方面了 該等切割元件係為矽/碳化矽燒結的聚晶鑽石立方體而形 成基體。各立方體包含大約9Q%體積百分比的鎖石(粒徑 為大約10微米),且其餘部分可為石夕或是碳化石夕。可使 用極少量的鈦以利燒結製程。該等立方體可被壓入一石墨 模具’並且立方體的各邊長尺寸可為1mm。雖然上述例子 中的立方體已被證實為特別有效’應了解本發明可使用各 種尺寸以及結構的聚晶材料。 藉由以超硬聚晶材料之獨立單元形成切割元件於 二4:形狀中’可更加輕易地以非常精確的方式來配置切 _。由於定義的幾何形狀可自一個切割元件一 個被相當精確地複製,各切割元件可相當1地被定 佈在所討述切割裝置的表面,因 广丄 町單长谷切割元件上的 應力亦可相當-致地遍佈在該切割裝置的表 術的研磨砂蝶’舉例而·r ’該等砂碟的整體外形以及:寸 25 200911462 可月b在石)蝶與另—砂碟之間有著相當的不同’此令該等 砂樂難以被精確的佈置。 〆 有機材料層(1 4 )戶斥/由田λα u )所使用的材料可相當廣泛地改變。太 案領域具有熟習技蓺者了鲑夕 ^ ^ 解夕種可以被極有效地使用在太 發明實施例的有機材料,* α 土 & , 你不 斗在此考慮討論這些有機材料。兮 有機材料層可為任何可秭人 更化(Curab丨e)樹脂材料、樹脂咬 他具備足夠強度爽圊—士 & 乂具 來口疋本發明獨立聚晶切割元件的 物。使用較硬的有機材料層 ° 形或是不彎曲變形是有^ ^持千坦表面而較少f曲變 人疋有显的。此令研磨工具可至少部分敕 合非常小的獨立聚晶切到开 i 小型切割元件在相當平整且一致的高度。 夺、二 ::外’夕種有機材料可作用於吸收衝擊在有機材料内 之切u彳元件的機械力,因 在該研磨工具。 …此機械力分散並且均等遍佈 的相中熟習技藝者可知道任何以引起有機材❹ 方式來硬化有機材料層的方法,該有機材料層1: ” 層由至少柔軟可曲折的狀態到達剛硬肤 輻射(如賴Γ!令有機材料暴露於熱、電磁 如電子束)、有機觸媒、無機例 技藝者所知道的硬化方法。 疋其他本案領域熟習 在本發明某—方面,該有 料。熱塑性材料可各自透過 ::以疋-熱塑性材 化及軟化。在s ^ 熱來進行可逆性的硬 在另一方面,該有機材料可以為熱固性材料。 26 200911462 • 熱固性材料不能像熱塑性材料般被可逆地硬化或軟化。換 言之,一旦發生硬化,該過程基本上為不可逆。 本發明貫細•例中有用的有機材料可包含而不限制於: 氨基樹脂(amino resins)(包含烷基尿素曱醛樹脂(a|ky|ated urea-formaldehyde resins)、三聚氰胺曱醛樹脂 (melamine-formaldehyde resins)、烷基苯並胍胺甲醛樹脂 (alkylated benzoguanamine-formaldehyde resins))、丙 烯酸酯樹脂(acrylate resins)(包含乙烯基丙烯酸酯(viny丨 acrylates)、丙烯酸醋環氧化物(acry|ated epoxies)'丙稀 酸酯氨基卸酸酯(acrylated urethanes)、丙烯酸聚醋 (acrylated polyesters)、丙烯酸酯壓克力(acry|ateci acrylics)、丙烯酸酯聚醚多元醇(acry|atecj p〇|yethers)、 乙烯基醚(vinyl ethers)、丙烯酸酯油(acry|ated oils)、丙 烯酸酯矽(acrylated silicons)以及相關的甲基丙烯酸酯 (methacrylates))、醇酸樹脂(alkyd resins)(例如氨基鉀 酸酯醇酸樹脂(urethane alkyd resins))、聚酯樹脂 (polyester resins)、聚醯胺;f封月旨(polyamide resins)、聚亞 醯胺樹脂(polyimide resins)、反應性氨基鉀酸酯(reactive urethane resins)、聚氨酉旨接f 月旨(polyurethane resins)、紛 類樹脂(phenolic resins)(例如液態酚醛樹脂(resole resins) 及酚醛樹脂(novolac resins))、酚/乳膠樹脂 (phenolic/latex resins)、環氧樹月旨(epoxy resins)(例如 丙二酚環氧樹脂(bisphenol epoxy resins))、異氰酸酯樹 月旨(isocyanate resins)、isocyanurate resins、聚石夕氧烧樹 27 200911462 脂(polysiloxane resins)(包含烷基烷氧基矽樹脂 (alkylalkoxysilane resins))、反應性乙烯基樹脂(reactive vinyl resins)、商標名為Bakelite的樹脂(包含聚乙烯樹 脂(polyethylene resins)、聚丙烯樹脂(polypropylene resins)、環氧樹脂(epoxy resins)、酚類樹脂(phenolic resins)、聚苯乙烯樹脂(polystyrene resins)、苯氧基樹脂 (phenoxy resins)、花四曱酸二酐樹脂(pery|ene resjns)、, formed by wire-cut electrical discharge machining (W丨>e E丨ectN, object 9, balance e-_), and 1 can be made to have a tip, edge or mesa at the tip end of the pyramid. In addition, when the element is made of independent particles, the meteorite is less than the Japanese car, the double knives: 3⁄4 V noise, the structure of the particle or sand, including the above-mentioned machine, is used, and the m phase is expected. Injury creates an asymmetrical structure formed by a suitable tool for processing pcT particles. In an embodiment of the present invention, the i77 ί, Ι ^ Wb inch month dimension 3 can be adjusted to adjust the contact pressure of the point of view, the edge or the table surface, and the farther apart, the contact pressure between the pyramid and the corner The bigger. Cause::P:24 200911462 f The less the tip is to support the stress, the deeper the depth of the tip penetration, and the larger the roughness formed on the polished file. In general, the polishing rate of a wafer depends on the size and number of the roughness. The denser and smallerer roughness has a comparable polishing rate to the more sparsely roughened portion. However, the former is more uniform and does not generate excessive power, causing problems such as uneven hooking, scratching, money intrusion or embarrassment on fragile wafers. The aforementioned smaller and denser roughness is applied to steels of less than 9 nanometers (nm) and dielectrics having a low dielectric constant (Low-K) and greater than 20% pores (p〇re). The effect is more significant and true. The individual polycrystalline cutting elements can be formed in a variety of ways and in a variety of materials known to those skilled in the relevant art. In one aspect of the invention, the cutting elements are formed of a tantalum/cerium carbide sintered polycrystalline diamond cube to form a matrix. Each cube contains approximately 9Q% by volume of lock stone (particle size of approximately 10 microns) and the remainder may be either Shi Xi or Carbonized Fossil. A very small amount of titanium can be used to facilitate the sintering process. The cubes can be pressed into a graphite mold' and the sides of the cube can be 1 mm long. Although the cubes in the above examples have proven to be particularly effective, it should be understood that the present invention can use polycrystalline materials of various sizes and configurations. By forming the cutting element in a separate shape in the shape of a superhard polycrystalline material, it is easier to configure the cutting in a very precise manner. Since the defined geometry can be replicated quite accurately from one cutting element, each cutting element can be placed on the surface of the cutting device in question, as the stress on the cutting elements of the Hiroshima-cho can also be Quite - the ground sanding butterfly that spreads throughout the surface of the cutting device's example. · r 'The overall shape of the sand discs and: inch 25 200911462 can be a month b in the stone) butterfly and another sand disc The difference 'this makes it difficult to arrange these sands accurately.材料 The material used in the organic material layer (1 4 ) 户 / 由 α α α ) can vary considerably. The field of the case has a familiar skill. The 种 种 ^ species can be used very effectively in the organic materials of the invention example, * α 土 &, you do not consider discussing these organic materials here.兮 The organic material layer can be any sturdy (Curab丨e) resin material, resin bite. It has enough strength to be used as a separate polycrystalline cutting element of the present invention. The use of a harder organic material layer shape or no bending deformation is to have a thousand tanned surface and less f-bend changes. This allows the abrasive tool to at least partially blend very small individual polycrystalline cuts to open i small cutting elements at fairly flat and consistent heights. The organic material of the smear, the second, and the outer layer can act to absorb the mechanical force of the cleavage element in the organic material, because of the grinding tool. ...the skilled artisan will be aware of any method for causing the organic material layer to harden the organic material layer in a phase in which the mechanical force is dispersed and evenly spread. The organic material layer 1:" is at least soft and tortuous to the rigid skin. Radiation (such as Lai! Exposure of organic materials to heat, electromagnetics such as electron beams), organic catalysts, and hardening methods known to those skilled in the art. 疋 Others in the field of the present invention are familiar with certain aspects of the present invention. They can be individually:: 疋-thermoplastic materialized and softened. Reversible hardness in s ^ heat. On the other hand, the organic material can be a thermosetting material. 26 200911462 • Thermosetting materials cannot be reversibly like thermoplastic materials Hardening or softening. In other words, once hardening occurs, the process is substantially irreversible. The organic materials useful in the present invention may include, without limitation: amino resins (including alkyl urea furfural resins ( a|ky|ated urea-formaldehyde resins), melamine-formaldehyde resins, alkyl benzoguanamines Alkened benzoguanamine-formaldehyde resins, acrylate resins (including viny acrylates, acry|ated epoxies' acrylate amides (acrylated urethanes), acrylic acrylated polyesters, acry|ateci acrylics, acrylate polyether polyols (acry|atecj p〇|yethers), vinyl ethers, acrylic acid Acry|ated oils, acrylated silicons and related methacrylates, alkyd resins (eg urethane alkyd resins) Polyester resins, polyamides, polyimide resins, polyimide resins, reactive urethane resins, and polyurethanes Polyurethane resins, phenolic resins (such as liquid resole resins and novolac resins), phenol/latex resin (p Henolic/latex resins), epoxy resins (such as bisphenol epoxy resins), isocyanate resins, isocyanurate resins, poly-stone oxywatt trees 27 200911462 Polysiloxane resins (including alkylalkoxysilane resins), reactive vinyl resins, resins under the trade name Bakelite (including polyethylene resins, polypropylene resins) Polypropylene resins, epoxy resins, phenolic resins, polystyrene resins, phenoxy resins, tetradecanoic dianhydride resins (pery|ene) Resjns),

聚砜樹脂(polysulfone resins)、乙烯共聚物樹脂(ethylene copolymer resins)、丙烯睛_ 丁二烯·苯乙烯(ABS)樹脂 (acrylonitrile-butadiene-styrene (ABS) resins)、丙稀酸 樹脂(acrylic resins)及乙烯基樹脂(viny丨resins))、丙烯 酸樹脂(ac「ync resins)、聚碳酸酯樹脂(p〇|ycarb〇nate 々叫 resi ns)、以及其混合物與組合物。在本發明 機材料可為-環氧樹脂。再另—方面,該有機材料可為聚 亞酿胺樹脂。又在另—方面,該有機材料可為聚氨醋樹脂。 有機材料可包含多種添加物以增進其使用十生。舉例而 言,可使用額外添加的交叉結合用劑與填充物來增進有機 材料層的硬化特性。此外,可站田、〜士丨+ 匕卜叮使用浴劑來増進有機材料層 錢化狀態時的特性。此外,可在硬化的有機材料層的至 J刀之U-強化材料。此強化材料可作用於增加 :機材料層的強度,並且進一步增進獨立聚晶切割元件在 :機材料層上的保留度。在一方面,㈣化材料可包含陶 ^屬或是其組成物。陶究的例子包含氧化靖_na)、 匕紹(A丨圆·_⑽咖)、:氧化伟Hica)、碳化石夕 28 200911462 碳化錯(Zirconium (Silicon Carbide)、氧化锆(仏⑶心) Carbide)以及其混合物。 此外,在-方面,可在各超級磨料粒子的表面上塗佈 一結合劑或是有機金屬化合物以增進該超級磨料粒子透過 化學結合的方式在有機材料基體上的保留度。本領域熟習 技藝者可知道並使用極廣泛的各種有機和有機金屬化合 物。有機金屬肖合劑可形成超級磨料粒子與有機材料基體 之間的化學結合’ g而增加粒子在有機材料基體内的保留 度。以此方式,該有機金屬結合劑如同橋樑般作用而形成 在有機材料基體與超級磨料粒子表面之間的連接物。在本 發明一方面,該有機金屬結合劑可為鈦酸鹽(Titanate)、錯 酸鹽(Zirconate)、石夕烧(silane)及其混合物。 適用於本發明之特定而非限制性矽烷包含:3-縮甘油 謎氧基丙基二曱氧基石夕院(3-g|ycidoxypropyltrimethoxy silane)(可由Dow Corning公司的型號Z-6040矽烷取 得)、Y-甲基丙烯酰氧基丙基三甲氧基矽烷(Y-methacryloxy propyltrimethoxy silane)(可由 Union Carbide ChemicalsPolysulfone resins, ethylene copolymer resins, acrylonitrile-butadiene-styrene (ABS) resins, acrylic resins And vinyl resin (viny丨resins), acrylic resin (ac "ync resins", polycarbonate resin (p〇|ycarb〇nate nickname resi ns), and mixtures and compositions thereof. In the machine material of the present invention The organic material may be a poly-branched amine resin. In another aspect, the organic material may be a polyurethane resin. The organic material may contain various additives to enhance its use. For example, additional cross-linking agents and fillers may be used to enhance the hardening characteristics of the organic material layer. In addition, it is possible to use the bath agent to penetrate the organic material layer. In addition, it can be in the hardened organic material layer to the U-strength material of the J-knife. This reinforcing material can act to increase the strength of the machine material layer and further enhance the independent polycrystalline cutting. The retention of the component on the machine material layer. In one aspect, the (four) chemical material may comprise a genus or a composition thereof. Examples of ceramics include oxidized _na), 匕绍 (A 丨 round _ (10) coffee) ,: oxidized Hica), carbonized stone eve 28 200911462 Zirconium (Silicon Carbide), zirconia (仏(3) heart) Carbide) and mixtures thereof. In addition, in the aspect, it can be coated on the surface of each superabrasive particle. A bond or an organometallic compound promotes retention of the superabrasive particles by chemical bonding on the substrate of the organic material. A wide variety of organic and organometallic compounds are known and used by those skilled in the art. The mixture can form a chemical bond between the superabrasive particles and the organic material matrix to increase the retention of the particles in the matrix of the organic material. In this way, the organometallic binder acts as a bridge to form an organic material matrix and a link between the surfaces of the superabrasive particles. In one aspect of the invention, the organometallic binder can be a titanate (Titanate), a misacid salt (Z Irconate), silane, and mixtures thereof. Specific, but not limited to, decanes suitable for use in the present invention include: 3-g|ycidoxypropyltrimethoxy silane ( Y-methacryloxy propyltrimethoxy silane (available from Dow Corning's model Z-6040 decane) (available from Union Carbide Chemicals)

Company公司的型號as A-1 74矽烷取得)、(3-(3,4-環氧 環己烷)乙基三甲氧基矽烷 (β_(3,4-e poxy cyclohexyl)ethyl trim ethoxy silane)、γ-氨丙基三乙 氧基石夕院(γ- ami nopropyltriethoxy silane)、Ν-(β-氨乙基)- Y-氨丙基甲基二甲氧基矽烷(卜(尽-3111比〇0讣71)-丫-aminopropylmethyldimethoxy silane)(可由 Union Carbide 公司、Shin-etsu Kagaku Kogyo Κ·Κ·公司等等 29 200911462 取得)、以及其他由美國第4,795,678號專利案、第 4,390,647號專利案以及第5,038,555號專利案所揭露的 適當矽烷結合劑,該等專利整合於此以供參考。 特定而非限制性的鈦酸鹽結合劑可包含:三(異十八 酸-0 )( 2-丙氧)鈦酸鹽(isopropyl tri isos tea royl titan ate)、 一(異丙苯石碳酸)氧乙酸欽酸鹽 (di(cumylphenylate)oxyacetate titanate)、4-胺基苯續十 — 本 續 欽 酸 鹽 (4- aminobenzenesulfonyldodecyl benzenesulfonyl titanate)、四辛基雙(雙十三烷亞磷酸鹽)鈦酸鹽 (tetraoctylbis (ditridecylphosphite) titanate)、異丙基三 (N-乙氨基-乙氨基)鈦酸鹽(|5〇口|*0卩丫|忭丨(|^-6出7丨3011门0· ethylamino) titanate )(可由 Kenrich Petrochemicals. Inc. 公司取得)、新烧氧基鈦酸鹽(neoalkyoxy titanates)(例 如 LICA-01、LICA-09、UCA-28、LICA-44 以及 UCA-97, 亦可由Ken rich公司取得)等等。 特疋而非限制性的紹結合劑包含 acetoalkoxy aluminum diisopropylate (可由 Ajinomoto K.K公司取得) 等等。 特定而非限制性的錘酸鹽結合劑包含:新烷氧基锆酸 鹽(neoalkoxy zirconates)、LZ-01、LZ-09、LZ- 12、LZ-38、 LZ-44、LZ-97 (皆可由 Kenrich Petrochemicals, lnc_ 公 司取得)等等。其他已知的有機金屬結合劑,例如硫醇 (Thiolate)類化合物,可使用於本發明之中並且列入本發明 30 200911462 的範疇之中。 有機金屬u劑的用量取決於結合劑以及獨立聚晶切 告ll 70件的表面積。-般而言,有機材料層含〇 〇5%到游〇 重量百分比的有機金屬結合劑則為充足。 。月參”、、第一 A圖,在本發明某一方面,切割裝置(i〇c) 的獨立聚晶㈣元件可由材料的聚曰曰曰& (p〇丨^「帅丨丨心 Blank)所形成及/或獲得。第三A圖顯示此種材料述⑽), 其包3 ^成為碟盤狀的聚晶坯,該碟盤直徑大約3〇隱 且厚度可從大約0 2到2 m ητ。 碟盤(30)可以本案領域熟習技藝者所了解的各種方式 而被分割為-複數聚晶獨立切割元件,該方式包含而不限 制於電氣化學加工、雷射切割、電漿蝕刻、氧化(形成二 氧化碳或是-氧化碳氣體)、氫化(形成甲院氣體)等等。 具較長波長的雷射束(例如摻斂釔鋁石榴石(Neodymium-Doped Yttrium A|uminium Garnet, ND:YAG)) 被用 於有效 率地在PCD上形成切割溝槽,具備較短波長的雷射束(例 如激光器(EXcimer))可被用於切出在主要切割元件頂部的 第二切割元件,如第三B圖所示。雖然後者切割速度較慢, 使用較短波長通常令其較精確匕夕卜,具較高頻率的能量 可令表面損傷更少。此雷射束使用於對本發明⑦晶圓進行 刮或平刨的作業。 在本發明一方面’係以放電加工法(E|ectrica丨Company's model as A-1 74 decane, (3-(3,4-epoxy cyclohexyl)ethyl trim ethoxy silane), Γ-amipropyl triethoxy silane, Ν-(β-aminoethyl)-Y-aminopropylmethyldimethoxy decane (b (-3111 〇0)讣71)-丫-aminopropylmethyldimethoxy silane) (available from Union Carbide, Shin-etsu Kagaku Kogyo, 公司·公司, etc. 29 200911462), and other US Patent Nos. 4,795,678, 4,390,647 and 5,038,555 Suitable decane binders disclosed in the patents are incorporated herein by reference. The specific, non-limiting titanate binder may comprise: tris(isooctadecanoic acid-0) (2-propoxy) Isopropyl tri isos tea royl titanate, di(cumylphenylate)oxyacetate titanate, 4-aminobenzene benzene continued ten-benzate (4 - aminobenzenesulfonyldodecyl benzenesulfonyl titanate), tetraoctyl double (double thirteen Phosphite) titanate (ditridecylphosphite) titanate, isopropyl tris(N-ethylamino-ethylamino) titanate (|5〇口|*0卩丫|忭丨(|^-6出7丨3011门0· ethylamino) titanate ) (available from Kenrich Petrochemicals. Inc.), neoalkyoxy titanates (eg LICA-01, LICA-09, UCA-28, LICA-44 and UCA-97, also available from Ken Rich, etc. Special, but not limiting, binders include acetoalkoxy aluminum diisopropylate (available from Ajinomoto KK), etc. Specific, but not limited, sulphate binders include : neoalkoxy zirconates, LZ-01, LZ-09, LZ-12, LZ-38, LZ-44, LZ-97 (all available from Kenrich Petrochemicals, lnc_) and the like. Other known organometallic binders, such as Thiololate compounds, can be used in the present invention and are included in the scope of the present invention 30 200911462. The amount of organometallic agent used depends on the surface area of the binder and the individual polycrystals. In general, an organic material layer containing 〇 5% to 〇 by weight of the organic metal binder is sufficient. . "After the month", the first A picture, in one aspect of the invention, the independent polycrystalline (four) element of the cutting device (i〇c) can be gathered by the material & (p〇丨^" handsome heart Blank Formed and/or obtained. Figure 3A shows such a material (10)), which is packaged as a disc-shaped polycrystalline compact having a diameter of about 3 〇 and a thickness of from about 0 2 to 2 m ητ. The disk (30) can be divided into a plurality of polycrystalline individual cutting elements in various ways known to those skilled in the art, including but not limited to electrochemical processing, laser cutting, plasma etching, Oxidation (formation of carbon dioxide or carbon monoxide gas), hydrogenation (formation of a gas), etc. Laser beam with a longer wavelength (for example, Neodymium-Doped Yttrium A|uminium Garnet, ND: YAG)) is used to efficiently form a cutting groove on a PCD, and a shorter wavelength laser beam (such as a laser (EXcimer)) can be used to cut a second cutting element on top of the main cutting element, such as Figure 3 shows the latter. Although the latter cuts slowly, it uses The wavelength is usually more precise, and the higher frequency energy can cause less surface damage. This laser beam is used for the shaving or planing of the 7 wafers of the present invention. EDM process (E|ectrica丨

Discharge Machining, EDM)去除 PCD 或是 PcBN 聚合物 上的材料。在此方面,EDM製程可使用—個或多個具有鑽 31 200911462Discharge Machining, EDM) removes material from PCD or PcBN polymers. In this regard, the EDM process can use one or more with drills 31 200911462

石的電極。舉例而t,eD 鑽石材料,且EDM f "用:的陰極可為摻有领的 中,PCD ^ 、王使用的險極可為PCD (在此例子 Ύ PCD 一般需要至少有一邱八目谨+ 於摻棚鑽石材料,可伴刀具導電性)。當電流施加 以在PCD切成各藉 制性地去除PCD上的材料 上开y成各種切割元件。 可了解的,該碟盤(30)被分割為八個 =形塊叫。在本發明—實施财,該楔形寸^ 上述固態有機材料層的方式設置在—基座⑽)上。 ==本發:中’該楔形塊㈣沿徑向分佈於; ; 或疋基板的表面上。以此方式,楔形塊(32) 一被配置為令各楔形塊(32)在研磨或處理一工件(圖中未 ::時’承受大致相同的力量(各楔形塊(32)大致 备/也固定於有機基體中)。不必然如此,惟在本發明一實 ,例中’PCD注(3。)可具有大約3〇圆的直徑,*基座(咖) 可具有大約i00mm的直徑。僅大約3〇mm大的⑽ 更材料可形成具大約1 〇〇cm直徑的切割裝置。 ° 曰如第四圖所示’在本發明一方面,切割裝置(1〇d)各聚 晶獨立切割元件(例如楔形塊(32))的縱轴係沿著切宝 :的半徑(R)對齊。在此實施例中,聚晶獨立切割元件以4: =交錯分佈在該切割裝置上(相鄰的獨立聚晶切割元 1沿著相反方向)。在基座或是基板(12b)表面上配置切割 凡件的方法可根據特定的應用而改變。由於獨立聚晶元件 ==狀與尺寸一致,在基座上設置及配置切割元二相 田各易。因此,為了特定應用而改變配置是可相當容易且 32 200911462 精碟地完成的。 藉由使用相較於加工工件「 一 仟(圖中未不)之基座(12b)而 言數量較少的聚晶材料(例如 禾盤(30)),可以大為減少 所使用的聚晶材料數量而節省可觀的成本。本發明人發 現,本發明切割裝置的性能相當於或是近似於「全面性」 鋪設有聚晶切割或研磨工呈夕@ , 舛熠具之傳統切割裝置的性能。 第三A圖的聚晶,可被分編個相等的部分。 然而,如第五到第+ -閤碎- — , 』弟十一圖所不,碟盤(3(^)(30〇)(30〇1)可分 別被分割為1 2個相蓉邱八广4 ^ 卩刀(即為㈣塊(32b))、16個相 等部分(即為楔形塊I、/ n > 4鬼(32C))以及2個相等部 塊(32d))等等。以,士古—^押 工本么明提供足夠彈性來創造並 配置獨立聚晶切割元件於工具上。考慮到各種其他可能的 結構,其包含而不限制於具不同尺寸與外形的獨立聚晶切 割元件。 照第三B圖’在本發明一方面,各獨立聚晶切 ^件()可包含複數個形成在該獨立聚晶切割元件一表 :上的第二切割元件(4〇)。第二切割元件可被配置為令各 “曰獨立切割元件在切割裝置使用時保 切割元件可具有不同形狀,且可包含矩形切割元件、角錐 形切割元件以及三角 刀。彳兀件專4。弟二切割元件亦可 疋:錐形(Truncated py「am丨'dal Shape)(圖中未 藉由在主要切割元件上採用第二切割元件,切割元 的〜切割邊長度可以提升達1 〇,〇〇〇倍。 根據另方面,本發明提供一切割裝置的製法,其包 33 200911462 含·’獲取一基板;在基板上配置有複數獨立聚晶切割元件 各獨立聚晶元件包含有—致的幾何結構; 人从一固能、 有機材料層將該等獨立聚晶切割元件固定到該基板上。心 該製法可包含將各獨立聚晶切割元件的 口j王乂 一切割 端對齊於一共同平面。 範例 下列範例係提供各種製造本發明切割裝置的方法 '二 些範例係僅僅作為說明用,而非意圖限制本發明。 、 範例1 — 〜…項>〇 々體係作為切 割元件以形成CMP拋光墊整修器。各立方體包含有: 90%體積百分比的鑽石(粒徑尺寸為大約1〇微米),’· 剩餘的部分為碎或是碳切。可使隸少量的鈦來促進: 結製程。立方體壓人於-石墨模具其各邊長為大 1mm。 衣氧化物杈具上形成有複數孔洞以容納pCD立方 體的尖端。在模具的頂面上設置有一交界層。接著,另一 =化物係以真空方式料於其上。在硬化後,移除模具, 暴路各立方體的尖端。該等尖端成為一拋光墊整修器的切 割尖端。 ILtLi 、夕/&化⑪為基體的燒結聚晶鑽石的碟盤係被分割 :”、複數個具有大致相同體積的楔形塊。該等楔形塊係作為 切割-件爾CMP抛光塾整修器。各楔形塊包含大約 34 200911462 * 90%體積百分比的鑽石(粒徑為大約10微米)’而其餘 部份為矽或是碳化矽。可使用極少量的鈦來促進燒結製 程。 一锿氧化物模具上形成有複數孔洞以容納PCD楔形 塊。在模具的頂面上設置有一交界層。接著,另—環氧化 物係以真空方式澆鑄於其上。在硬化後,移除模具,暴露 各楔形塊的表面。該等楔形塊表面(包含表面上的邊緣) 成為一拋光墊整修器的切割元件。 範例3 以六面頂壓機(Cubic Press)壓製的PCD坯的兩側被 剪裁而去除耐火性(Refractory)金屬容器(例如鉅(丁扣化⑴⑺, 丁a))。聚晶坦外徑則被磨除。pep坯上結合在碳化鶴 (Wolfram Carbide,wc)基材上,且該 pCD 層進行 edm 加工而形成以預設圖形分佈的複數角錐。該PC[)坯係接 著被分割為複數楔形切割塊,且該等切割塊被設置於一平 坦模具上並令該等切割塊與模具齊平。 該模具係設置在一真空室中,且環氧化物係灌注於其 頂部。最後,在流動的環氧化物上設置一不鏽鋼板並且將 不鏽鋼板朝PCD壓合直到pCD背面與鋼基材之間形成一 環氧化物薄層。在環氧化物硬化後,PCD切割工具受清潔, 且在鋼基材背面上形成安裝結構(例如孔)。 PCT切割塊可以環形圖形、圓形板、方形等圖形樣式 配置於不鏽鋼板上。這些圖形可最佳化而適用於特定的 CMP應用。 35 200911462 閱讀者應了解的是上述内容僅供 用。在不違背本發明範畸 X明原理的應 領域熟習該項技#者可=精神的前提下,本案所屬技術 附在後的申請專利範 二置,且依 置。因此,杏固叫皿&些修改與不同的配 置口此,*本發明中目前被視為是 被揭露如上時,對於_項技藝 概念與原則來作出而不受限制於多種 a 3 ί尺寸、材料、外Stone electrode. For example, t, eD diamond material, and EDM f " use: the cathode can be mixed with the collar, PCD ^, Wang use the risk can be PCD (in this case, PCD generally needs at least one Qiu Bamu + For shed diamond material, it can be accompanied by tool conductivity). When a current is applied to cut the material on the PCD in a PCD cut, various cutting elements are opened. As can be appreciated, the disc (30) is divided into eight = shaped blocks. In the present invention, the wedge-shaped solid organic material layer is disposed on the susceptor (10). ==本发:中' The wedge block (4) is distributed radially on the surface of the substrate; In this manner, the wedge blocks (32) are configured such that each wedge block (32) undergoes substantially the same force when grinding or processing a workpiece (the following is not:: each wedge block (32) is substantially prepared/also It is not necessarily the case, but in the present invention, the 'PCD note (3.) may have a diameter of about 3 inches, and the * base may have a diameter of about i00 mm. A material of about 3 mm in size (10) can form a cutting device having a diameter of about 1 cm. ° As shown in the fourth figure, in one aspect of the invention, the cutting device (1〇d) each of the polycrystalline individual cutting elements The longitudinal axis of the wedge block (32) is aligned along the radius (R) of the cut: In this embodiment, the polycrystalline individual cutting elements are staggered at 4: = on the cutting device (adjacent The independent polycrystalline cutting element 1 is in the opposite direction. The method of arranging the cutting piece on the surface of the base or the substrate (12b) can be changed according to the specific application. Since the independent polycrystalline element == shape and size are the same, The setting and configuration of the cutting element on the pedestal is easy. Therefore, it changes for specific applications. This can be done quite easily and by 32 200911462. By using a small amount of polycrystalline material (such as a disk) compared to the pedestal (12b) of the workpiece (not shown) (30)), which can greatly reduce the amount of polycrystalline material used, and save considerable cost. The inventors have found that the performance of the cutting device of the present invention is equivalent to or similar to "comprehensive", with polycrystalline cutting or grinding. The work of the traditional Chinese cutting device, the performance of the traditional cutting device of the cookware. The polycrystalline crystal of the third A picture can be divided into equal parts. However, as the fifth to the fifth - the broken --, the younger brother The figure is not, the disc (3 (^) (30〇) (30〇1) can be divided into 12 2 phase qiu Qiuguang 4 ^ 卩 ( (that is, (four) block (32b)), 16 equal Part (ie wedge block I, / n > 4 ghost (32C)) and 2 equal parts (32d)), etc.., Shigu-^ 押本本明明 provides sufficient flexibility to create and configure independent poly The crystal cutting element is on the tool. Considering various other possible structures, it includes and is not limited to independent polycrystalline cutting with different sizes and shapes. In accordance with a third aspect of the invention, in the aspect of the invention, each individual polycrystalline cutting member () may comprise a plurality of second cutting elements (4〇) formed on a table of the individual polycrystalline cutting elements. The two cutting elements can be configured such that each "曰 separate cutting element can have a different shape when the cutting device is in use, and can include rectangular cutting elements, pyramidal cutting elements, and triangular knives. The cutting element can also be tapered (Truncated py "am丨'dal Shape" (the second cutting element is not used in the main cutting element, the length of the cutting edge can be increased by up to 1 〇, 〇〇 〇 times. According to another aspect, the present invention provides a method of manufacturing a cutting device, the package 33 200911462 comprising 'acquiring a substrate; and the plurality of independent polycrystalline cutting elements disposed on the substrate; each of the individual polycrystalline elements comprising a geometric structure; A layer of solid energy, organic material secures the individual polycrystalline cutting elements to the substrate. The method can include aligning the cut ends of the individual polycrystalline cutting elements with a common plane. EXAMPLES The following examples are provided to illustrate various methods of making the cutting apparatus of the present invention. The two examples are for illustrative purposes only and are not intended to limit the invention. Example 1 - item ... > 〇 The system is used as a cutting element to form a CMP pad repairer. Each cube contains: 90% by volume of diamond (particle size is about 1 inch), and the remaining part is broken or carbon cut. A small amount of titanium can be used to promote: the bonding process. The cube is pressed into a graphite mold with a length of 1 mm on each side. A plurality of holes are formed in the clothing oxide cookware to accommodate the tip end of the pCD cube. An interface layer is provided on the top surface of the mold. Next, another = compound is applied to it in a vacuum. After hardening, the mold is removed and the tip of each cube is blasted. These tips become the cutting tips of a polishing pad conditioner. The discs of the sintered polycrystalline diamonds of ILtLi, Xi/&11 are divided into: ", a plurality of wedge-shaped blocks having substantially the same volume. These wedge-shaped blocks are used as cutting-cut CMP polishing 塾 dressers. Each wedge block contains approximately 34 200911462 * 90% by volume diamond (particle size approximately 10 microns) and the remainder is tantalum or tantalum carbide. A very small amount of titanium can be used to facilitate the sintering process. A plurality of holes are formed thereon to accommodate the PCD wedge block. An interface layer is disposed on the top surface of the mold. Then, another epoxide is vacuum-cast thereon. After hardening, the mold is removed to expose the wedge blocks. The surface of the wedge block (including the edge on the surface) becomes the cutting element of a polishing pad conditioner. Example 3 Both sides of a PCD blank pressed by a Cubic Press are cut to remove fire resistance. (Refractory) metal container (for example, giant (butyl (1) (7), D)). The outer diameter of the polycrystalline silicon is removed. The pep slab is bonded to a Wolfram Carbide (WC) substrate, and the pCD layer Conduct edm A plurality of pyramids are formed in a predetermined pattern. The PC[) blank is then divided into a plurality of wedge-shaped cutting blocks, and the cutting blocks are placed on a flat mold and the cutting blocks are flush with the mold. The mold is placed in a vacuum chamber and the epoxide is poured on top of it. Finally, a stainless steel plate is placed on the flowing epoxide and the stainless steel plate is pressed against the PCD until the back of the pCD is bonded to the steel substrate. A thin layer of epoxy is formed. After the epoxy is hardened, the PCD cutting tool is cleaned and a mounting structure (such as a hole) is formed on the back side of the steel substrate. The PCT cutting block can be in the form of a circular pattern, a circular plate, a square, or the like. Configured on stainless steel plates. These graphics can be optimized for specific CMP applications. 35 200911462 Readers should be aware that the above is for use only. This technique is familiar to those who do not violate the principles of the invention. #者可=The premise of the spirit, the patent application method attached to the case belongs to the second application, and depends on it. Therefore, the apricot solid dish & some modifications and different configurations, this invention It is currently considered to be exposed as above, for the concept and principle of _ items to be made without limitation to a variety of a 3 ί size, material, and

及使用上的改變。 〜、功-、操作方法、組裝 【圖式簡單說明】 第—A圖係本發明—實施例中—切割裝置的俯視平面 圖。 第-B圖係、第—A圖中切割裝置的部分放大視圖。 面圖第_ A圖係本發明另一實施例中一切割裝置的俯視平And changes in use. ~, work -, operation method, assembly [Simplified description of the drawings] - Figure A is a plan view of the cutting device in the present invention - an embodiment. A partial enlarged view of the cutting device in the first-B diagram and the first-A diagram. Figure _A is a plan view of a cutting device in another embodiment of the present invention

第二B圖係第:A圖中切割裝置的部分放大視圖。 第一A圖係本發明一實施例中一聚晶坯 (Polycrystalline Blank)的俯視平面圖,其中—切割裝置所 包含的獨立聚晶切割元件係由該聚晶坯所形成。 第三B圖係沿第三a圖的B_B線段所呈現的切割元件 的局部放大戴面視圖。 第四圖係本發明另一實施例中一聚晶坯的俯視平面 圖,其中一切割裝置所包含的獨立聚晶切割元件係由該聚 晶述形成。 36 200911462 第五圖係本發明—實施例的另外一聚晶 圖,該聚晶链被分割為複數獨立切割元件。的俯視平面 第六圖係本發明根據另一實施例的一 平面圖,該切割裝置包含了複& 、置的俯視 旦〇 3 γ複數由以第五圖聚曰 的獨立聚晶切割元件》 日日#所形成 第七圖係本發明根據另_實_^_ 視平面圖,該切割裝置包含了複數個由第五圖聚=: 成的獨立聚晶切割元件。 a 斤开乂 第八圖係本發明一實施例之另一聚面 圖,該聚晶链被分割為一連串的獨立切割元件。視'"面 第九圖係本發明另—眚姑/丨 ^賓·%例之—切割裝置 圖,該切割裝置包含了複數個由 +面 立聚晶切割元件。 ❿由第八圖聚晶枉所形成的獨 第:圖係本發明另一實施例之另一切割裝置的俯視平 面圖’綱裝置包含了複數個由第八圖聚 獨立聚晶切割元件》 |〜成的 第t一圖係本發明一實施例之另一聚晶述的俯視平面 圖,忒聚晶坯被分割為一對獨立切割元件。 第f二圖係本發明另—實施例之一切割裝置的俯視平 面圖相#彳裝置包含了複數個由第十所 的猶立聚晶切割元件。 可理解的’上述圖式僅作為進一步了解本發明之顯示 用途。此外,圖式並非依照實際尺度而製作,因此,尺寸, 粒子大小以及其他方面通常被誇大以便能令視圖更加清 37 200911462 楚。因此,在製造本發明的切割裝置時,是可以違反圖式 中所表現的特定尺寸及其他方面。 【主要元件符號說明】 (10a)(10b)(10c)(10e)(10d)(10f)(10h)切割裝置 (12a)(12b)基座 (14)固態有機材料層 (16a)(16b)獨立聚晶切割元件 (18a)(18b)切割尖端 (20a)(20b)平面 (30)(30b)(30c)(30d)碟盤 (32)(32b)(32c)(32d)楔形塊 (40)第二切割元件 (R)半徑 38Figure 2B is a partially enlarged view of the cutting device in Figure A. The first A is a top plan view of a polycrystalline blank in an embodiment of the invention, wherein the individual polycrystalline cutting elements included in the cutting device are formed from the polycrystalline blank. The third B diagram is a partially enlarged perspective view of the cutting element presented along line B_B of the third a diagram. Figure 4 is a top plan view of a polycrystalline body in accordance with another embodiment of the present invention in which a separate polycrystalline cutting element comprised by a cutting device is formed from the polycrystalline body. 36 200911462 The fifth figure is another polycrystalline pattern of the present invention - an embodiment, the polycrystalline chain being divided into a plurality of individual cutting elements. The sixth plan view of the present invention is a plan view of another embodiment of the present invention, the cutting device comprising a complex & The seventh figure formed by the day # is a plan view according to another embodiment, the cutting device comprises a plurality of independent polycrystalline cutting elements formed by the fifth figure. a jin opening 第八 The eighth figure is another collecting view of an embodiment of the present invention, which is divided into a series of independent cutting elements. The ninth diagram of the present invention is another embodiment of the present invention - a cutting device comprising a plurality of + faceted polycrystalline cutting elements.独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独 独The t-th image is a top plan view of another polycrystalline film according to an embodiment of the present invention, and the germanium polycrystalline body is divided into a pair of independent cutting elements. Fig. 12 is a top plan view of the cutting device of the other embodiment of the present invention. The device comprises a plurality of the tenth polycrystalline cutting elements of the tenth. It is to be understood that the above drawings are only for further understanding of the display use of the present invention. In addition, the schema is not based on actual scales, so size, particle size, and other aspects are often exaggerated to make the view clearer. Thus, in making the cutting apparatus of the present invention, it is possible to violate the particular dimensions and other aspects exhibited in the drawings. [Description of main component symbols] (10a) (10b) (10c) (10e) (10d) (10f) (10h) Cutting device (12a) (12b) Base (14) Solid organic material layer (16a) (16b) Independent polycrystalline cutting element (18a) (18b) cutting tip (20a) (20b) plane (30) (30b) (30c) (30d) disc (32) (32b) (32c) (32d) wedge block (40 ) second cutting element (R) radius 38

Claims (1)

200911462 十、申請專利範圍: 1 種超硬切割裝置,其包含: 一基座,甘L 、 ”上s又置有一固態有機材料層;以及 複數獨立:¾¾ B i 儿晶切割元件,係固設在該有固態機材料層 之中,各獨取θ ♦曰a切割元件係具有一大致上一致的幾何結 構。 2 、如由 主 甲請專利範圍第1項所述之超硬切割裝置,其 中各獨立聚Η ^…_ _ 日日切割70件包含有至少一切割尖端,該等切割 兀件的尖端係對齊於—共同平面。 3如申請專利範圍第1項所述之超硬切割裝置,其 中各獨立聚晶b- d 件係為一材料聚晶达的一分割部分。 如申叫專利範圍第3項所述之超硬切割裝置,其 中遠聚晶传^ _ήπ_ 係為—碟盤形狀,且其中各獨立聚晶切割元件 為該碟盤的一分割部分。 申明專利圍第4項所述之超硬切割裝置,其200911462 X. Patent application scope: 1 super-hard cutting device, which comprises: a pedestal, gan L, ” s and a layer of solid organic material; and a plurality of independent: 3⁄43⁄4 B i crystal cutting components, fixed In the layer of the solid-state machine material, each of the θ ♦ 曰 a cutting elements has a substantially uniform geometry. 2 , as in the main A, the ultra-hard cutting device described in claim 1 of the patent scope, wherein Each of the individual Η ... ... ... 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 Wherein each of the independent polycrystalline b-d pieces is a divided part of a material polycrystal. For example, the ultra-hard cutting device described in claim 3, wherein the far polycrystalline transmission ^ _ ή π_ is a dish shape And wherein each of the individual polycrystalline cutting elements is a divided portion of the disk. The ultra-hard cutting device according to claim 4, :各獨立聚晶切割元件係為該碟盤的一均等部;,該等均 等部分係相互均等。 中各猶iL明專利範圍第4項所述之超硬切割裝置,其 中各獨立承晶切割元件係大致上為楔形。 7如申明專利範圍第4項所述之超 =立聚晶切割元件係沿徑向分佈在該超二置 :曰睛專利範圍f 7項所述之超硬切割裝置 中夂想*取S丄 〜〜V T刀割裝置,另 γ各獨立聚晶切割元件的縱 糸/σ者D亥切告,]元件的半徑聲 39 200911462 齊。 如申μ專利範15第8項所述之超硬切割裝置,其 =等獨立聚晶切割元件係分佈以相反方向交錯分佈在該 超硬切割裝置上。 1 0、如申請專利範圍第工項所述之超硬切割裝置, :;獨立聚晶切割元件包含複數個形成在該獨立聚晶切 割兀件表面上的第二切室丨丨_ >日日刀 人 13 70件,該等第二切割元件被配置 為f各t晶獨立切割亓杜—+ 件在超硬切割裝置使用時保持一銳 判度。 宝,J开杜厂種超硬切割袭置,其包含:複數獨立聚晶切 割疋件,係固設在— 口心有機材料層之中,各獨立聚晶切 割70件包含有至少_ + 刀尖端,該等獨立聚晶切割元件的 穴&係對背於一共同平面0 申月專利範圍第1 1項所述之超硬切割裝 ’其中該等獨立聚晶切割元件係配置均勻地將阻力分佈 到大致遍及各獨立聚晶切割元件上。 申月專利範圍第1 1項所述之超硬切割裝 置’、中大夕數的獨立聚晶切割元件在固態有 突伸達一預設高度。 1 4、如申請專利範圍第"項所述之超硬切割裝 置’其中當超硬切割裝置被使用於研磨一工件時,該預設 高度係產生一少於大約20微米的切割深度。 15 士申明專利範圍第1 1項所述之超硬切割裝 置,其中各獨立聚晶切割元件係具有一大致上—致的幾何 200911462 結構。 1 6、如申請專利範圍第1 1項所述之超硬切割襄 置,其中各獨立聚晶切割元件係為材料聚晶坯的一分割部 1 7、如申請專利範圍第1 6項所述之超硬切割農 置,其中该聚晶坯係為—碟盤形狀,且其中各獨立 一 卜日日了刀 割元件為該碟盤的一分割部分。 1 8、如申請專利範圍第1 7項所述之超硬切割裝 置〃中各獨立聚晶切割元件係為碟盤的一互相均等 分。 1 9、如申請專利範圍第1 7項所述之超硬切割裝 置,其中各獨立聚晶切割元件係大致上為楔形。 2 0、如申請專利範圍第1 7項所述之超硬切割袭 置,其中該等獨立聚晶切割元件係沿徑向分佈在該有機材 料層的表面上。 2 1、如申請專利範圍第1 1項所述之超硬切割裂 置,其中該等獨立聚晶切割元件係大致上有相同尺寸和相 同形狀。 2 2如申印專利範圍第1 1項所述之超硬切割裝 置其中忒等獨立聚晶切割元件係被配置為格狀。 2 3、如申請專利範圍第2 2項所述之超硬切割裝 置,其中該等獨立聚晶切割元件係彼此均勻地相間隔而具 有大約100到大約800微米的間距。 ” 2 4、如申請專利範圍第2 3項所述之超硬切割裝 41 200911462 置,其中該等獨立聚晶切割元件係均勻地相間隔而具有大 約500微米的間距。 2 5、如申請專利範圍第1或是1 1項所述之超硬切 割裝置,其中該固態有機材料層包含一材料,該材料選自 於氨基樹脂(amino resins)、丙烯酸酯樹脂(acrylate resins)、醇酸樹脂(alkyd resins)、聚酯樹脂(polyester resins)、聚醯胺樹脂(polyamide resins)、聚亞醯胺樹脂 (polyimide resins)、聚氨酯樹脂(polyurethane resins)、 酚類樹脂(phenolic resins)、酚/乳膠樹脂(phen0|ic/|atex resins)、環氧樹脂(epoxy resins)、異氰酸酯樹脂 (isocyanate resins)、isocyanurate resins、聚石夕氧烧樹脂 (polysiloxane resins)、反應性乙烯基樹脂(reactive viny| resins)、聚乙烯樹脂(polyethylene resins)、聚丙烯樹脂 (polypropylene resins)、聚苯乙烯樹脂(p〇|ystyrene resins)、苯氧基樹脂(phenoxy resins)、花四甲酸二奸樹 脂(perylene resins)、聚颯樹脂(p〇|ysulfone resins)、丙 烯睛-丁二烯-苯乙烯(ABS)樹脂(acrylonitrile-butadiene- styrene (ABS) resins)、丙烯酸樹脂(acrylic「esins)、聚 礙酸酯樹脂(P〇丨ycarbonate resins)、以及其混合物與組人 物。 2 6、如申請專利範圍第2 5項所述之超硬切割裝 置’其中§亥固態有機材料層係為一環氧化物樹脂。 2 7、如申請專利範圍第2 5項所述之超硬切割裝 置’其中忒固悲有機材料層係為一聚氨醋樹脂。 42 200911462 2 8、如申請專利範圍第2 5項所述之超硬切割襄 置’其中該固態有機材料層係為一聚亞醢胺樹脂。 2 9、如申請專利範圍第2 5項所述之超硬切割装 置’進一步包含有一設置在該固態材料層的至少一部分史 内的強化材料。 3 0、如申請專利範圍第2 9項所述之超硬切割学 置,其中該強化材料係選自一群組,該群組由陶瓷、金屬 或是其組成物所組成。: each individual polycrystalline cutting element is an equal part of the disk; and the equal parts are equal to each other. The superhard cutting device according to item 4 of the above-mentioned Japanese Patent Application No. 4, wherein each of the independent crystal cutting elements is substantially wedge-shaped. 7 The super-positive polycrystalline cutting element according to item 4 of the claimed patent scope is distributed in the radial direction in the super-hard cutting device described in the ultra-two-position: the patent scope f 7; ~ ~ VT knife cutting device, another γ each of the individual polycrystalline cutting elements of the longitudinal 糸 / σ D Hai cut,] the radius of the component sound 39 200911462 Qi. The superhard cutting device according to the eighth aspect of the invention, wherein the independent polycrystalline cutting element distribution is staggered in the opposite direction on the superhard cutting device. 10, the ultra-hard cutting device according to the application of the scope of the patent application, the independent polycrystalline cutting element comprises a plurality of second cutting chambers formed on the surface of the independent polycrystalline cutting element &> There are 13, 70 Japanese knives, and the second cutting elements are configured to maintain a sharpness in the use of the super-hard cutting device. Bao, J Kaidu plant superhard cutting attack, which consists of: a plurality of independent polycrystalline cutting elements, which are fixed in the layer of organic materials, each of which has 70 pieces of independent polycrystalline cutting containing at least _ + knives The tip, the hole of the individual polycrystalline cutting elements is paired with a super-hard cutting device as described in item 11 of the common plane 0 of the patent application, wherein the individual polycrystalline cutting elements are configured uniformly The resistance is distributed throughout substantially the individual polycrystalline cutting elements. The super-hard cutting device described in item 11 of the patent scope of the Japanese patent, the independent polycrystalline cutting element of the middle and large latitudes protrudes from the solid state to a predetermined height. A superhard cutting device as described in the 'Scope of Claims' wherein when the superhard cutting device is used to grind a workpiece, the predetermined height produces a cutting depth of less than about 20 microns. The superhard cutting device of claim 1 wherein each of the individual polycrystalline cutting elements has a substantially uniform geometry 200911462 structure. The superhard cutting device according to claim 11, wherein each of the individual polycrystalline cutting elements is a dividing portion of the material polycrystalline blank, as described in claim 16 of the patent application. The ultra-hard cutting farm, wherein the polycrystalline body is in the shape of a dish, and wherein each of the individual cutting elements is a divided part of the disk. 18. The superhard cutting device of the superhard cutting device according to claim 17 of the patent application is an equal division of the discs. The superhard cutting device of claim 17, wherein each of the individual polycrystalline cutting elements is substantially wedge shaped. The superhard cutting action of claim 17, wherein the individual polycrystalline cutting elements are radially distributed on a surface of the organic material layer. 2 1. The superhard cutting split according to claim 11, wherein the individual polycrystalline cutting elements have substantially the same size and the same shape. 2 2 The superhard cutting device according to the above-mentioned item of the patent application, wherein the individual polycrystalline cutting elements such as 忒 are configured in a lattice shape. The superhard cutting device of claim 2, wherein the individual polycrystalline cutting elements are evenly spaced from each other and have a pitch of from about 100 to about 800 microns. [24] The ultra-hard cutting device 41 200911462 according to claim 23, wherein the individual polycrystalline cutting elements are evenly spaced and have a pitch of about 500 microns. The superhard cutting device of item 1 or 11, wherein the solid organic material layer comprises a material selected from the group consisting of amino resins, acrylate resins, alkyd resins ( Alkyd resins), polyester resins, polyamide resins, polyimide resins, polyurethane resins, phenolic resins, phenol/latex resins (phen0|ic/|atex resins), epoxy resins, isocyanate resins, isocyanurate resins, polysiloxane resins, reactive viny|resins , polyethylene resins, polypropylene resins, polystyrene resins (p〇|ystyrene resins), phenoxy resins ( Phenoxy resins), perylene resins, p〇|ysulfone resins, acrylonitrile-butadiene- styrene (ABS) resins , acrylic "esins", P〇丨ycarbonate resins, and mixtures thereof and groups of people. 2 6. Ultra-hard cutting device as described in claim 25 of the patent application. The solid organic material layer is an epoxide resin. 2 7. The ultra-hard cutting device according to claim 25, wherein the layer of the organic material is a polyurethane resin. 42 200911462 2 8 The superhard cutting device of claim 25, wherein the solid organic material layer is a polyamidene resin. 2. The ultra-hard cutting as described in claim 25 The device 'further includes a reinforced material disposed in at least a portion of the history of the layer of solid material. The superhard cutting device of claim 29, wherein the reinforcing material is selected from the group consisting of , the The group consisting of ceramic, metal, or is a composition composed. 3 1、一種超硬切割裝置製法,其包含: 獲得一基板; 在该基板上配置有複數獨立聚晶切割元件,各獨立a 曰曰切元件具有—大致上一至欠的幾何結構;以及 Λ 以一固態有機材料層將該等獨立聚晶切割 該基板上。 1干口疋到 如肀請專利範圍第3 1項所 ,〜叫不υ丄-Κ厂% <受硬切刻 製法,其中各獨立聚晶切割元件的至少一切 對:置 一共同平面。 ^對齊於 制、 如申請專利範圍第3 1項所述之超硬切心 製法,其中各獨立喈θ 。丨破置 割部分。34二 件係為一材料聚晶*的1 mu 申巧專利範圍第3 3項所述之超 j w ’其中各獨立聚晶切割元件係為一碟礙刀割 /、中各獨立聚晶切割元件為該碟盤的一分割部f…且 ”、如申請專利範圍第34項所述 獨立“切割元件係為該碟盤的置 J 互相均等 43 200911462 部分。 3 6、如申請專利範圍第3 制法,其中各猶#卒日+ 項所述之超硬切割裝置 衣法其中各獨立“切割元件係大致上為楔形。 3 7、如申請專利範圍第3 4貝所返之超硬切宝t|爹詈 製法,其中該等獨立聚晶切宝彳 _ J铲置 曰刀疋件係沿牷向分佈於該基板 上0 3=如中請專利範圍m項所述之超硬切割裝置3 1. A method of superhard cutting device, comprising: obtaining a substrate; and arranging a plurality of independent polycrystalline cutting elements on the substrate, each of the independent a chopping elements having a substantially one-to-under geometric structure; A layer of solid organic material cuts the individual polycrystals onto the substrate. 1 Dry mouth 肀 肀 肀 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利^ Aligned with the system, as described in claim 31, the superhard centroid method, in which each is independent of θ. Break the cut section. 34 two pieces are a material polycrystalline * 1 mu 巧 专利 专利 专利 专利 专利 专利 专利 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中A separate portion f of the disc is "and", as described in claim 34, the independent "cutting element" is the portion of the disc that is equal to each other 43 200911462. 3 6. For example, in the third method of patent application, the super-hard cutting device method described in each of the following paragraphs is the wedge-shaped element. 3 7. If the scope of patent application is 3 4Bie's super hard cut treasure t|爹詈 method, in which the independent polycrystalline cut 彳 _ J shovel 曰 疋 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布 分布Superhard cutting device 製法〜、中以獨立聚晶切割元件係、大致上有相同尺寸和 相同形狀。 3 9、如申請專利範圍第3 1項所述之超硬切割裝置 製法,其中該等獨立聚晶切割元件係被配置為格狀。 4 0、如申請專利範圍第3 9項所述之超硬切割裝置 製法’其中該等獨立聚晶切割元件係彼此均勻地相間隔而 具有大約1 〇〇到大約800微米的間距。 41、如申請專利範圍第1或11項所述之超硬切割 裝置,其中該獨立聚晶切割元件包含超硬聚晶切割元件。 4 2、如申請專利範圍第4 1項所述之超硬切割裝 置,其中該等超硬聚晶切割元件包含超硬聚晶粒子。 4 3、如申請專利範圍第3 1項所述之超硬切割裝置 製法,其中該等聚晶切割元件包含超硬聚晶切割元件。 4 4、如申請專利範圍第4 3項所述之超硬切割裝置 製法,其中該等超硬聚晶切割元件包含超硬聚晶粒子。 4 5、如申請專利範圍第4 3項所述之超硬切割裝置 製法,其中該等超硬聚晶切割元件係選自於一群組,該群 44 200911462 組由聚晶鑽石以及聚晶立方氮化硼所組成。 十一、圖式: 如次頁 a. I 45The method of the method ~, the medium polycrystalline cutting element system, has substantially the same size and the same shape. The superhard cutting device method of claim 31, wherein the individual polycrystalline cutting elements are configured in a lattice shape. The superhard cutting device method of claim 39, wherein the individual polycrystalline cutting elements are evenly spaced from one another and have a pitch of from about 1 大约 to about 800 microns. The superhard cutting device of claim 1 or 11, wherein the individual polycrystalline cutting element comprises a superhard polycrystalline cutting element. 4. The superhard cutting device of claim 41, wherein the superhard polycrystalline cutting elements comprise superhard polycrystalline particles. The method of superhard cutting device according to claim 31, wherein the polycrystalline cutting element comprises a superhard polycrystalline cutting element. 4. The method of superhard cutting device according to claim 4, wherein the superhard polycrystalline cutting elements comprise superhard polycrystalline particles. 4. The method of superhard cutting device according to claim 4, wherein the superhard polycrystalline cutting elements are selected from the group consisting of polycrystalline diamonds and polycrystalline cubes. Made up of boron nitride. XI. Schema: as the next page a. I 45
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