TWI602651B - A Compound Chemical Mechanical Dresser - Google Patents

A Compound Chemical Mechanical Dresser Download PDF

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TWI602651B
TWI602651B TW105126350A TW105126350A TWI602651B TW I602651 B TWI602651 B TW I602651B TW 105126350 A TW105126350 A TW 105126350A TW 105126350 A TW105126350 A TW 105126350A TW I602651 B TWI602651 B TW I602651B
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bonding layer
chemical mechanical
mechanical polishing
materials
flat
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TW105126350A
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TW201806699A (en
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白陽亮
廖懿造
曾周智
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中國砂輪企業股份有限公司
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一種複合式化學機械研磨修整器Composite chemical mechanical polishing dresser

本發明為有關一種化學機械研磨修整器,尤指一種兼具去釉化以及粗糙化的複合式化學機械研磨修整器。The invention relates to a chemical mechanical polishing dresser, in particular to a compound chemical mechanical polishing dresser which has both deglazing and roughening.

於半導體晶圓製造過程之中,係廣泛使用化學機械研磨(Chemical mechanical polish,簡稱CMP)製程對晶圓進行研磨,令晶圓表面達平坦化。常見的化學機械研磨製程為使用一固定在一旋轉台的研磨墊(或拋光墊),接觸並施力於一承載在一可自旋之載具上的晶圓,於研磨時,該載具與該旋轉台將進行轉動且提供一研磨漿料至該研磨墊。一般而言,由於壓力與速度的移動(Preston equation),研磨墊上的研磨高點將產生高溫釉化(Glazing)現象,且研磨所造成的碎屑將累積在研磨墊中的孔洞,導致其對於晶圓的研磨效果下降,因此,需要使用一修整器(Conditioner)移除研磨墊上之釉化點以及殘留的碎屑。In the semiconductor wafer manufacturing process, the wafer is polished using a chemical mechanical polish (CMP) process to planarize the surface of the wafer. A common CMP process uses a polishing pad (or polishing pad) attached to a rotating table to contact and apply a wafer to a spin-on carrier. The rotating table will rotate and provide a polishing slurry to the polishing pad. In general, due to the pressure and velocity movement (Preston equation), the high grinding point on the polishing pad will produce a high temperature glazing phenomenon, and the debris caused by the grinding will accumulate in the holes in the polishing pad, causing it to crystallize The round grinding effect is reduced, so a Conditioner is required to remove the glaze spots on the polishing pad and residual debris.

如本案申請人所提出申請的中華民國發明專利公開第201532734號,提出一種高性能化學機械研磨修整器,包括一基板、一結合層以及複數個研磨顆粒,該結合層係設置於該基板上,該些研磨顆粒係藉由該結合層以直接固定於該基板上,每一研磨顆粒係設置於一金屬固定座上,且該基板具有複數個凹槽或複數個貫穿孔,使該金屬固定座容置於該些凹槽或該些貫穿孔中,且該金屬固定座藉由該結合層以固定於該基板上,其中,該研磨顆粒係經由一表面加工處理,使該研磨顆粒具有特定之切削刃角、晶形結構、尖端高度、及尖端方向性,或者,該研磨顆粒係未經加工處理之研磨顆粒。The high-performance chemical mechanical polishing dresser includes a substrate, a bonding layer and a plurality of abrasive particles, and the bonding layer is disposed on the substrate, as disclosed in the applicant's patent application publication No. 201532734. The abrasive particles are directly fixed on the substrate by the bonding layer, each of the abrasive particles is disposed on a metal fixing base, and the substrate has a plurality of grooves or a plurality of through holes, so that the metal fixing seat And the metal fixing seat is fixed on the substrate by the bonding layer, wherein the abrasive particles are processed through a surface to make the abrasive particles have a specific The cutting edge angle, the crystal structure, the tip height, and the tip orientation, or the abrasive particles are unprocessed abrasive particles.

又可參中華民國發明專利公開第201143979號,提出一種具有混合修整功能的化學機械拋光墊修整器,其包括一支撐基質、複數個平滑超研磨粒子以及複數個粗糙超研磨粒子,該平滑超研磨粒子係設置在該支撐基質上,該複數平滑超研磨粒子可用於在一拋光墊上切割出大的粗糙部,該粗糙超研磨粒子係設置在該支撐基質上,該複數粗糙超研磨粒子可用於在該複數個大的粗糙部上切割出複數研磨液渠道,其中該複數研磨液渠道係用以在化學機械拋光製程中,促進研磨液的活動遍及於該複數個大的粗糙部。In addition, the Chinese Patent Publication No. 201143979 discloses a chemical mechanical polishing pad conditioner having a mixed trimming function, which comprises a support substrate, a plurality of smooth superabrasive particles, and a plurality of rough superabrasive particles, the smooth superabrasive a particle system disposed on the support substrate, the plurality of smooth superabrasive particles being operable to cut a large roughness on a polishing pad, the rough superabrasive particles being disposed on the support substrate, the plurality of coarse superabrasive particles being usable The plurality of large roughness portions cut a plurality of polishing liquid channels, wherein the plurality of polishing liquid channels are used to promote the movement of the polishing liquid throughout the plurality of large roughness portions in the chemical mechanical polishing process.

此外,本案申請人所提出申請的中華民國發明專利申請第104135197號,提出一種混合式化學機械研磨修整器,包括一基座、一第一研磨單元以及複數個第二研磨單元,該第一研磨單元係設置於該基座上,且包括固定於該基座上的一第一結合層、設置於該第一結合層上的一研磨單元基板以及設置於該研磨單元基板上的一研磨層,該研磨層係利用化學氣相沉積法所形成的一鑽石鍍膜,且該鑽石鍍膜表面具有複數個研磨尖端,該第二研磨單元係設置於該基座上,且包括固定於該基座上的一第二結合層、設置於該第二結合層上的一承載柱、設置於該承載柱上的一研磨顆粒以及設置於該承載柱和該研磨顆粒之間的一磨料結合層。In addition, the Chinese Patent Application No. 104135197, filed by the applicant of the present application, discloses a hybrid chemical mechanical polishing dresser comprising a base, a first grinding unit and a plurality of second grinding units, the first grinding The unit is disposed on the base, and includes a first bonding layer fixed on the base, a polishing unit substrate disposed on the first bonding layer, and an abrasive layer disposed on the polishing unit substrate. The polishing layer is a diamond coating formed by a chemical vapor deposition method, and the diamond coating surface has a plurality of polishing tips, and the second polishing unit is disposed on the base and includes a fixing on the base. a second bonding layer, a carrier column disposed on the second bonding layer, an abrasive particle disposed on the carrier column, and an abrasive bonding layer disposed between the carrier column and the abrasive particle.

於以上先前技術之中,中華民國發明專利公開第201532734號揭示該些研磨顆粒具有特定之切削刃角、晶形結構、尖端高度及尖端方向性,但因研磨顆粒僅有單一態樣,故修整的功能有限。中華民國發明專利公開第201143979號以及申請第104135197號均揭示具有兩種研磨單元的混合式化學機械研磨修整器,然其並未對其中的結構設計有更詳細的定義,故難以達成所主張之兼具去釉化及粗糙化的功效。由以上可知,化學機械研磨修整器之結構設計仍有待改進。In the above prior art, the Republic of China Patent Publication No. 201532734 discloses that the abrasive particles have a specific cutting edge angle, a crystal structure, a tip height and a tip orientation, but since the abrasive particles have only a single state, the trimmed Limited functionality. The Republic of China Patent Publication No. 201143979 and the application No. 104135197 both disclose a hybrid chemical mechanical polishing dresser having two types of grinding units, but it does not have a more detailed definition of the structural design therein, so it is difficult to achieve the claimed It has the functions of deglazing and roughening. It can be seen from the above that the structural design of the chemical mechanical polishing dresser still needs to be improved.

本發明的主要目的,在於解決習知化學機械研磨修整器,難以兼具去釉化及粗糙化功能之問題。The main object of the present invention is to solve the problem of the conventional chemical mechanical polishing dresser, which is difficult to combine the functions of deglazing and roughening.

為達上述目的,本發明提供一種複合式化學機械研磨修整器,針對一拋光墊的一表面進行修整,該複合式化學機械研磨修整器包含一基座、複數個第一研磨單元以及複數個第二研磨單元,該基座包括一第一容置槽以及一第二容置槽,該第一研磨單元包括一固設於該第一容置槽的第一承載柱、一設置於該第一承載柱上的第一結合層以及一設置於該第一結合層上並透過該第一結合層固定於該第一承載柱的尖頭研磨顆粒,該第二研磨單元包括一固設於該第二容置槽的第二承載柱、一設置於該第二承載柱上的第二結合層以及一設置於該第二結合層上並透過該第二結合層固定於該第二承載柱的平頭研磨顆粒,其中,該尖頭研磨顆粒具有一高於該平頭研磨顆粒的高度,該高度係一從該基座的一上表面至該尖頭研磨顆粒的一尖端頂點的距離。To achieve the above object, the present invention provides a composite chemical mechanical polishing dresser for trimming a surface of a polishing pad, the composite chemical mechanical polishing dresser comprising a base, a plurality of first grinding units, and a plurality of a second grinding unit, the base includes a first receiving groove and a second receiving groove, the first grinding unit includes a first carrier column fixed to the first receiving groove, and a first mounting column a first bonding layer on the carrying column and a pointed abrasive particle disposed on the first bonding layer and fixed to the first carrier through the first bonding layer, the second polishing unit including a fixed a second supporting column of the second receiving groove, a second bonding layer disposed on the second supporting column, and a flat head disposed on the second bonding layer and fixed to the second supporting column through the second bonding layer The abrasive particles, wherein the pointed abrasive particles have a height that is higher than the level of the flat abrasive particles, the height being a distance from an upper surface of the base to a tip end of the pointed abrasive particle.

於一實施例中,該第一研磨單元更包括一設置於該第一容置槽與該第一承載柱之間的第一承載柱結合層,該第一承載柱透過該第一承載柱結合層固定於該第一容置槽。In an embodiment, the first grinding unit further includes a first carrier-bonding layer disposed between the first receiving slot and the first carrier, the first carrier is coupled through the first carrier The layer is fixed to the first receiving groove.

於一實施例中,該第一承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。In one embodiment, the composition of the first carrier pillar bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

於一實施例中,該第二研磨單元更包括一設置於該第二容置槽與該第二承載柱之間的第二承載柱結合層,該第二承載柱透過該第二承載柱結合層固定於該第二容置槽。In an embodiment, the second grinding unit further includes a second bearing column bonding layer disposed between the second receiving groove and the second bearing column, and the second bearing column is coupled through the second bearing column. The layer is fixed to the second receiving groove.

於一實施例中,該第二承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。In one embodiment, the composition of the second carrier-bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

於一實施例中,該基座的材料擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。In one embodiment, the material of the pedestal is selected from the group consisting of stainless steel, metal materials, plastic materials, and ceramic materials.

於一實施例中,該第一承載柱及該第二承載柱的材料擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。In one embodiment, the materials of the first carrier column and the second carrier column are selected from the group consisting of stainless steel, metal materials, plastic materials, and ceramic materials.

於一實施例中,該第一結合層及該第二結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。In one embodiment, the composition of the first bonding layer and the second bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials, and polymer materials.

於一實施例中,該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至200μm之間的高度差。In one embodiment, the tip apex of the pointed abrasive particle and a flat top mask of the flat abrasive particle have a height difference of between 10 [mu]m and 200 [mu]m.

於一實施例中,該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至100μm之間的高度差。In one embodiment, the tip apex of the pointed abrasive particle and a flat top mask of the flat abrasive particle have a height difference of between 10 μm and 100 μm.

於一實施例中,該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至50μm之間的高度差。In one embodiment, the tip apex of the pointed abrasive particle and a flat top mask of the flat abrasive particle have a height difference of between 10 μm and 50 μm.

於一實施例中,該第一研磨單元與該第二研磨單元的數量比例介於1:4至4:1之間。In an embodiment, the ratio of the first polishing unit to the second polishing unit is between 1:4 and 4:1.

於一實施例中,位於該基座上的該平頭研磨顆粒的一平坦頂面具有一介於10000μm 2至160000μm 2之間的面積。 A flat planar top surface of the abrasive particles in a first embodiment, positioned on the base having a range between 10000μm 2 to 160000μm 2 area.

於一實施例中,該平頭研磨顆粒的數量為介於10顆至200顆之間。In one embodiment, the number of the flat abrasive particles is between 10 and 200.

於一實施例中,該平頭研磨顆粒的數量較佳地介於20顆至40顆之間。In one embodiment, the number of the flat abrasive particles is preferably between 20 and 40.

於一實施例中,該平頭研磨顆粒的形狀為六面體或六-八面體結構。In one embodiment, the flat abrasive particles are in the shape of a hexahedron or a hexahedral structure.

於一實施例中,該平頭研磨顆粒具有一負斜角或一0度角。In one embodiment, the flat abrasive particles have a negative bevel or a 0 degree angle.

於一實施例中,該負斜角介於0度至-35度之間。In an embodiment, the negative bevel angle is between 0 degrees and -35 degrees.

和上述先前技術相較之下,例如中華民國發明專利公開第201143979號以及申請第104135197號所揭示的混合式拋光墊修整器,本發明的該尖頭研磨顆粒係與該平頭研磨顆粒相距該高度差,而相較於中華民國發明專利公開第201532734號,本發明係將該尖頭研磨顆粒與該平頭研磨顆粒整合於單一該基座上。其中,該平頭研磨顆粒用於提供修整(Truing)和去釉化(Deglazing)之功能,而該尖頭研磨顆粒可提供粗糙化(Roughing)的修整效果,於該拋光墊的表面創造隆起,因此,整體來說將提供優異的修整效果。In contrast to the prior art described above, such as the hybrid polishing pad conditioner disclosed in the Republic of China Invention Patent Publication No. 201143979 and the application No. 104135197, the pointed abrasive particles of the present invention are at a height from the flat abrasive particles. In contrast, the present invention combines the pointed abrasive particles with the flat-head abrasive particles on a single base as compared to the Republic of China Patent Publication No. 201532734. Wherein the flat-head abrasive particles are used to provide the functions of triming and deglazing, and the pointed abrasive particles can provide a roughening effect to create a bulge on the surface of the polishing pad, thus Overall, it will provide excellent finishing effects.

有關本發明的詳細說明及技術內容,現就配合圖式說明如下:The detailed description and technical content of the present invention will now be described as follows:

請搭配參閱『圖1』與『圖2』所示,分別為本發明一實施例的俯視示意圖以及『圖1』的A-A方向的側視示意圖,如圖所示,本發明為一種複合式化學機械研磨修整器,包含一基座10、複數個第一研磨單元20以及複數個第二研磨單元30,該基座10包括一第一容置槽11以及一第二容置槽12,於本發明之一實施例中,該基座10的材質為不鏽鋼、金屬材料、塑膠材料、陶瓷材料或上述組合。Please refer to FIG. 1 and FIG. 2 respectively, which are respectively a schematic top view of an embodiment of the present invention and a side view of the AA direction of FIG. 1 . As shown, the present invention is a composite chemistry. The mechanical polishing dresser includes a base 10, a plurality of first grinding units 20, and a plurality of second grinding units 30. The base 10 includes a first receiving groove 11 and a second receiving groove 12, In one embodiment of the invention, the base 10 is made of stainless steel, a metal material, a plastic material, a ceramic material or a combination thereof.

該第一研磨單元20包括一第一承載柱21、一第一結合層22及一尖頭研磨顆粒23,該第一承載柱21固設於該第一容置槽11上,該第一結合層22設置於該第一承載柱21上,該尖頭研磨顆粒23設置於該第一結合層22上並透過該第一結合層22固定於該第一承載柱21。該第二研磨單元30包括一第二承載柱31、一第二結合層32及一平頭研磨顆粒33,該第二承載柱31固設於該第二容置槽12上,該第二結合層32設置於該第二承載柱31上,該平頭研磨顆粒33設置於該第二結合層32上並透過該第二結合層32固定於該第二承載柱31。於本實施例中,該第一研磨單元20更包括一第一承載柱結合層24,該第一承載柱結合層24設置於該第一容置槽11與該第一承載柱21之間,該第一承載柱21透過該第一承載柱結合層24固定於該第一容置槽11;該第二研磨單元30更包括一第二承載柱結合層34,該第二承載柱結合層34設置於該第二容置槽12與該第二承載柱31之間,該第二承載柱31透過該第二承載柱結合層34固定於該第二容置槽12。The first bonding unit 20 includes a first loading post 21, a first bonding layer 22, and a pointed abrasive particle 23, and the first carrier column 21 is fixed on the first receiving groove 11, the first bonding The layer 22 is disposed on the first carrier 21 , and the tip abrasive particles 23 are disposed on the first bonding layer 22 and fixed to the first carrier 21 through the first bonding layer 22 . The second polishing unit 30 includes a second loading post 31, a second bonding layer 32, and a flat grinding particle 33. The second loading post 31 is fixed on the second receiving groove 12, and the second bonding layer is 32 is disposed on the second carrier column 31. The flat head abrasive particles 33 are disposed on the second bonding layer 32 and are fixed to the second carrier column 31 through the second bonding layer 32. In the embodiment, the first grinding unit 20 further includes a first bearing column bonding layer 24 disposed between the first receiving groove 11 and the first bearing column 21 . The first carrier column 21 is fixed to the first receiving groove 11 through the first carrier column bonding layer 24; the second grinding unit 30 further includes a second carrier column bonding layer 34, and the second carrier column bonding layer 34 The second receiving post 31 is fixed to the second receiving slot 12 through the second receiving post bonding layer 34.

於本發明之一實施例中,該平頭研磨顆粒33於該基座10上的數量為介於10顆至200顆之間,於一較佳實施例中,該平頭研磨顆粒33於該基座10上的數量為介於20顆至40顆之間。於本實施例中,該第一研磨單元20與該第二研磨單元30於該基座10上的數量比例為1:4至4:1,且呈一圖案化排列,其中該圖案化排列可為矩陣式排列、放射狀排列或蜂巢狀排列。進一步補充,『圖1』僅為示意之用,並非呈現該平頭研磨顆粒33以及該尖頭研磨顆粒23實際的顆粒數量以及排列方式,其可依實際需求而進行調整顆粒數以及排列方式,不以『圖1』之舉例為限。In one embodiment of the invention, the number of the flat abrasive particles 33 on the susceptor 10 is between 10 and 200. In a preferred embodiment, the flat abrasive particles 33 are on the pedestal. The number on 10 is between 20 and 40. In this embodiment, the first polishing unit 20 and the second polishing unit 30 are on the base 10 in a ratio of 1:4 to 4:1, and are arranged in a pattern, wherein the patterned arrangement can be They are arranged in a matrix, in a radial arrangement or in a honeycomb arrangement. Further, "FIG. 1" is for illustrative purposes only, and does not present the actual number and arrangement of the flat abrasive particles 33 and the pointed abrasive particles 23, which can be adjusted according to actual needs and arranged. It is limited to the example of Figure 1.

於本發明一實施例中,該第一承載柱21及該第二承載柱31的材質可為不鏽鋼、金屬材料、塑膠材料、陶瓷材料或上述組合。該第一結合層22、該第二結合層32、該第一承載柱結合層24和該第二承載柱結合層34的材料可為陶瓷材料、硬焊材料、電鍍材料、金屬材料或高分子材料,其中,該硬焊材料可為鐵、鈷、鎳、鉻、錳、矽、鋁、硼、碳之金屬或合金,於一實施例中,該硬焊材料可採用Nicrobraz LM之合金,其成分為7 wt.%的Cr,3.1 wt.%的B,4.5 wt.%的Si,3.0 wt.%的Fe,0.06 wt%的C,其餘為Ni。該高分子材料可為環氧樹脂、聚脂樹脂、聚丙烯酸樹脂或酚醛樹脂。於本發明中,該基座10、該第一承載柱21及/或該第二承載柱31較佳地為不鏽鋼材料,但本發明並不以此為限,使用者可依需求而任意變化。該第一承載柱結合層24和該第二承載柱結合層34較佳地為高分子材料,例如,環氧樹脂或壓克力樹脂;該第一結合層22以及該第二結合層32較佳地為硬焊材料或高分子材料。In an embodiment of the invention, the material of the first carrier column 21 and the second carrier column 31 may be stainless steel, metal material, plastic material, ceramic material or the combination thereof. The material of the first bonding layer 22, the second bonding layer 32, the first carrier pillar bonding layer 24 and the second carrier pillar bonding layer 34 may be ceramic materials, brazing materials, plating materials, metal materials or polymers. a material, wherein the brazing material may be iron, cobalt, nickel, chromium, manganese, lanthanum, aluminum, boron, carbon metal or alloy. In one embodiment, the brazing material may be an alloy of Nicrobraz LM. The composition is 7 wt.% Cr, 3.1 wt.% B, 4.5 wt.% Si, 3.0 wt.% Fe, 0.06 wt% C, and the balance Ni. The polymer material may be an epoxy resin, a polyester resin, a polyacryl resin or a phenol resin. In the present invention, the susceptor 10, the first carrier 21 and/or the second carrier 31 are preferably made of stainless steel, but the invention is not limited thereto, and the user can arbitrarily change according to requirements. . The first carrier pillar bonding layer 24 and the second carrier pillar bonding layer 34 are preferably a polymer material, such as an epoxy resin or an acrylic resin; the first bonding layer 22 and the second bonding layer 32 are relatively Good ground is a brazing material or a polymer material.

於本發明中,該尖頭研磨顆粒23具有一尖端頂點231,該平頭研磨顆粒33具有一平坦頂面331,該尖頭研磨顆粒23具有一高於該平頭研磨顆粒33的高度h,該高度h係一從該基座10的一上表面101至該尖頭研磨顆粒23的該尖端頂點231的距離,該尖端頂點231與該平坦頂面331相距一高度差d。於本發明一實施例中,該平頭研磨顆粒33的該平坦頂面331具有一介於10000μm 2至160000μm 2之間的面積,此處的面積係指位於該基座10上所有的該平頭研磨顆粒33的該平坦頂面331的表面積和。於一實施例中,該高度差d為介於10μm至200μm之間,於一較佳實施例中,該高度差d為介於10μm至100μm之間,於一最佳實施例中,該高度差d為介於10μm至50μm之間。 In the present invention, the pointed abrasive particle 23 has a tip apex 231 having a flat top surface 331 having a height h above the flat abrasive particle 33, the height h is a distance from an upper surface 101 of the susceptor 10 to the tip apex 231 of the pointed abrasive particle 23, the tip apex 231 being at a height difference d from the flat top surface 331. In one embodiment of the present invention, the flat head of the flat top surface of the abrasive particles having a 33,133 between 10000μm 2 160000μm 2 to the area here means the area of the flat head positioned all abrasive particles 10 on the base The surface area of the flat top surface 331 of 33. In one embodiment, the height difference d is between 10 μm and 200 μm. In a preferred embodiment, the height difference d is between 10 μm and 100 μm. In a preferred embodiment, the height is The difference d is between 10 μm and 50 μm.

請繼續參閱『圖3』至『圖6』所示,分別為本發明一實施例中,該尖頭研磨顆粒第一態樣、第二態樣、第三態樣以及第四態樣的示意圖,該尖頭研磨顆粒23的形狀可為八面體,如『圖3』所示,然而,『圖3』形狀的該尖頭研磨顆粒23於實務上較不易取得,因此可選用較易取得之形狀為六-八面體之該尖頭研磨顆粒23,如『圖4』至『圖6』所示,其中第一態樣、第二態樣、第三態樣以及第四態樣的該尖頭研磨顆粒23的V(100)/V(111)分別為1.65、1.30、1.155以及1.00,而α分別為2.85、2.25、2.00以及1.73。以上僅為舉例說明,本發明所指的該尖頭研磨顆粒23應包括任何具有該尖端頂點231的研磨顆粒。請再參『圖7』至『圖10』所示,分別為本發明一實施例中,該平頭研磨顆粒第一態樣、第二態樣、第三態樣及第四態樣的示意圖,該平頭研磨顆粒33的形狀可為六面體,如『圖7』所示,然而,『圖7』形狀的該平頭研磨顆粒33於實務上較不易取得,因此可選用較易取得之形狀為六-八面體的該平頭研磨顆粒33,如『圖8』至『圖10』所示,其中第一態樣、第二態樣、第三態樣以及第四態樣的該平頭研磨顆粒33的V(100)/V(111)分別為0.60、0.70、0.80以及0.87,而α分別為1.04、1.21、1.39以及1.50。於本實施例,『圖2』中的該平頭研磨顆粒33係採用如『圖8』所示形狀為六-八面體的該平頭研磨顆粒33。以上僅為舉例說明,本發明所指的該平頭研磨顆粒33應包括任何具有該平坦頂面331的研磨顆粒。Please refer to FIG. 3 to FIG. 6 , which are schematic diagrams showing the first aspect, the second aspect, the third aspect and the fourth aspect of the pointed abrasive particles in an embodiment of the invention. The shape of the pointed abrasive particles 23 may be an octahedron, as shown in FIG. 3 . However, the pointed abrasive particles 23 of the shape of FIG. 3 are not easy to obtain in practice, and thus are relatively easy to obtain. The pointed abrasive particles 23 in the shape of a six-octahedron, as shown in FIG. 4 to FIG. 6, wherein the first aspect, the second aspect, the third aspect, and the fourth aspect are The pointed abrasive particles 23 had V(100)/V(111) of 1.65, 1.30, 1.155, and 1.00, respectively, and α was 2.85, 2.25, 2.00, and 1.73, respectively. The above is merely illustrative, and the pointed abrasive particles 23 referred to in the present invention should include any abrasive particles having the tip apex 231. Please refer to FIG. 7 to FIG. 10 respectively, which are schematic diagrams showing the first aspect, the second aspect, the third aspect and the fourth aspect of the flat-polished abrasive particles according to an embodiment of the present invention. The shape of the flat-head abrasive particles 33 may be a hexahedron, as shown in FIG. 7. However, the flat-head abrasive particles 33 of the shape of FIG. 7 are not easily obtained in practice, and thus the shape that can be easily obtained is selected. The flat-head abrasive particles 33 of the six-octahedron, as shown in FIG. 8 to FIG. 10, wherein the flat-surface abrasive particles of the first state, the second state, the third state, and the fourth aspect V(100)/V(111) of 33 is 0.60, 0.70, 0.80, and 0.87, respectively, and α is 1.04, 1.21, 1.39, and 1.50, respectively. In the present embodiment, the flat-head abrasive particles 33 in the "Fig. 2" are made of the flat-head abrasive particles 33 having a shape of a six-octahedron as shown in Fig. 8. The above is merely illustrative, and the flat abrasive particles 33 referred to in the present invention should include any abrasive particles having the flat top surface 331.

進一步來說,於本發明之一實施例中,該平頭研磨顆粒33具有一負斜角或一0度角,其中該負斜角介於0度至-35度之間。請參閱『圖11』所示,為本發明一實施例中切割角度為負斜角的示意圖,該平頭研磨顆粒33具有一切割面332,該切割面332於一拋光墊40的一表面上進行修整時會形成一切割角度θ,當該切割角度θ大於90度時,即為該負斜角,如『圖11』所示,當該切割角度θ小於90度時,即為一正斜角,當該切割角度θ等於90度時,即為該0度角。Further, in an embodiment of the invention, the flat abrasive particles 33 have a negative bevel or a 0 degree angle, wherein the negative bevel angle is between 0 and -35 degrees. Please refer to FIG. 11 , which is a schematic view showing a cutting angle of a negative oblique angle according to an embodiment of the present invention. The flat abrasive particle 33 has a cutting surface 332 , and the cutting surface 332 is performed on a surface of a polishing pad 40 . A trimming angle θ is formed during trimming, and the negative bevel angle is when the cutting angle θ is greater than 90 degrees. As shown in FIG. 11 , when the cutting angle θ is less than 90 degrees, it is a positive oblique angle. When the cutting angle θ is equal to 90 degrees, it is the 0 degree angle.

於實際操作時,半導體製程中需藉由該拋光墊40來對晶圓進行平坦化處理,當該拋光墊40進行多次使用後,該拋光墊40上的刻紋將會逐漸鈍化,且產生碎屑,故需藉由修整器對該拋光墊40進行修整。當使用本發明之該複合式化學機械研磨修整器時,該尖頭研磨顆粒23的該尖端頂點231會與該拋光墊40的該表面接觸而於該表面上產生隆起,而對該拋光墊40造成粗糙化的功能;另一方面,該平頭研磨顆粒33的該平坦頂面331會對該拋光墊40高低不平的部分產生移除的效果,而對該拋光墊40造成去釉化的功能。In actual operation, the wafer is planarized by the polishing pad 40 in the semiconductor process. When the polishing pad 40 is used multiple times, the scribe on the polishing pad 40 is gradually passivated and generated. Debris, the polishing pad 40 needs to be trimmed by a dresser. When the composite CMP abrasive dresser of the present invention is used, the tip apex 231 of the pointed abrasive particle 23 contacts the surface of the polishing pad 40 to create a ridge on the surface, and the polishing pad 40 is applied to the polishing pad 40. The function of causing roughening; on the other hand, the flat top surface 331 of the flat abrasive particles 33 causes a removal effect on the uneven portion of the polishing pad 40, and a function of deglazing the polishing pad 40.

綜上所述,本發明相較先前技術的功效為,該尖頭研磨顆粒可提供粗糙化的修整效果,於該拋光墊的該表面創造隆起,該平頭研磨顆粒可提供修整和去釉化的修整功能,使該拋光墊的該表面的碎屑移除,因此,藉由將該尖頭研磨顆粒和該平頭研磨顆粒整合於單一該基座上,使得該複合式化學機械研磨修整器具有優異的修整效果。In summary, the effect of the present invention over the prior art is that the pointed abrasive particles provide a roughening trimming effect, creating a ridge on the surface of the polishing pad that provides trimming and deglazing a trimming function to remove debris of the surface of the polishing pad, thereby making the composite chemical mechanical polishing dresser excellent by integrating the pointed abrasive particles and the flat abrasive particles on a single base Trimming effect.

以上已將本發明做一詳細說明,惟以上所述者,僅爲本發明的一較佳實施例而已,當不能限定本發明實施的範圍。即凡依本發明申請範圍所作的均等變化與修飾等,皆應仍屬本發明的專利涵蓋範圍內。The present invention has been described in detail above, but the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made by the scope of the present application should remain within the scope of the patent of the present invention.

10‧‧‧基座
101‧‧‧上表面
11‧‧‧第一容置槽
12‧‧‧第二容置槽
20‧‧‧第一研磨單元
21‧‧‧第一承載柱
22‧‧‧第一結合層
23‧‧‧尖頭研磨顆粒
231‧‧‧尖端頂點
24‧‧‧第一承載柱結合層
30‧‧‧第二研磨單元
31‧‧‧第二承載柱
32‧‧‧第二結合層
33‧‧‧平頭研磨顆粒
331‧‧‧平坦頂面
332‧‧‧切割面
34‧‧‧第二承載柱結合層
40‧‧‧拋光墊
h‧‧‧高度
d‧‧‧高度差
θ‧‧‧切割角度
10‧‧‧ Pedestal
101‧‧‧ upper surface
11‧‧‧First accommodating slot
12‧‧‧Second accommodating slot
20‧‧‧First grinding unit
21‧‧‧First load-bearing column
22‧‧‧First bonding layer
23‧‧‧ pointed abrasive particles
231‧‧‧ tip apex
24‧‧‧First bearing column bonding layer
30‧‧‧Second grinding unit
31‧‧‧Second load column
32‧‧‧Second bonding layer
33‧‧‧ Flat head grinding particles
331‧‧‧flat top surface
332‧‧‧cut face
34‧‧‧Second bearing column bonding layer
40‧‧‧ polishing pad
H‧‧‧height
D‧‧‧height difference θ‧‧‧cutting angle

『圖1』,為本發明一實施例的俯視示意圖。 『圖2』,為『圖1』的A-A方向的側視示意圖。 『圖3』,為本發明一實施例中,該尖頭研磨顆粒第一態樣的示意圖。 『圖4』,為本發明一實施例中,該尖頭研磨顆粒第二態樣的示意圖。 『圖5』,為本發明一實施例中,該尖頭研磨顆粒第三態樣的示意圖。 『圖6』,為本發明一實施例中,該尖頭研磨顆粒第四態樣的示意圖。 『圖7』,為本發明一實施例中,該平頭研磨顆粒第一態樣的示意圖。 『圖8』,為本發明一實施例中,該平頭研磨顆粒第二態樣的示意圖。 『圖9』,為本發明一實施例中,該平頭研磨顆粒第三態樣的示意圖。 『圖10』,為本發明一實施例中,該平頭研磨顆粒第四態樣的示意圖。 『圖11』,為本發明一實施例中,切割角度為負斜角的示意圖。FIG. 1 is a schematic plan view of an embodiment of the present invention. "Fig. 2" is a side view of the A-A direction of "Fig. 1". FIG. 3 is a schematic view showing the first aspect of the pointed abrasive particles in an embodiment of the present invention. FIG. 4 is a schematic view showing a second aspect of the pointed abrasive particles in an embodiment of the present invention. FIG. 5 is a schematic view showing a third aspect of the pointed abrasive particles in an embodiment of the present invention. Fig. 6 is a schematic view showing a fourth aspect of the pointed abrasive particles in an embodiment of the present invention. Fig. 7 is a schematic view showing the first aspect of the flat-polished abrasive particles in an embodiment of the present invention. Figure 8 is a schematic view showing the second aspect of the flat-head abrasive particles in an embodiment of the present invention. Fig. 9 is a schematic view showing a third aspect of the flat-polished abrasive particles in an embodiment of the present invention. Figure 10 is a schematic view showing a fourth aspect of the flat-head abrasive particles in an embodiment of the present invention. FIG. 11 is a schematic view showing a cutting angle of a negative oblique angle in an embodiment of the present invention.

10‧‧‧基座 10‧‧‧ Pedestal

101‧‧‧上表面 101‧‧‧ upper surface

11‧‧‧第一容置槽 11‧‧‧First accommodating slot

12‧‧‧第二容置槽 12‧‧‧Second accommodating slot

20‧‧‧第一研磨單元 20‧‧‧First grinding unit

21‧‧‧第一承載柱 21‧‧‧First load-bearing column

22‧‧‧第一結合層 22‧‧‧First bonding layer

23‧‧‧尖頭研磨顆粒 23‧‧‧ pointed abrasive particles

231‧‧‧尖端頂點 231‧‧‧ tip apex

24‧‧‧第一承載柱結合層 24‧‧‧First bearing column bonding layer

30‧‧‧第二研磨單元 30‧‧‧Second grinding unit

31‧‧‧第二承載柱 31‧‧‧Second load column

32‧‧‧第二結合層 32‧‧‧Second bonding layer

33‧‧‧平頭研磨顆粒 33‧‧‧ Flat head grinding particles

331‧‧‧平坦頂面 331‧‧‧flat top surface

34‧‧‧第二承載柱結合層 34‧‧‧Second bearing column bonding layer

h‧‧‧高度 H‧‧‧height

d‧‧‧高度差 D‧‧‧ height difference

Claims (17)

一種複合式化學機械研磨修整器,針對一拋光墊的一表面進行修整,該複合式化學機械研磨修整器包含:一基座,包括一第一容置槽以及一第二容置槽;複數個第一研磨單元,包括一固設於該第一容置槽的第一承載柱、一設置於該第一承載柱上的第一結合層以及一設置於該第一結合層上並透過該第一結合層固定於該第一承載柱的尖頭研磨顆粒;以及複數個第二研磨單元,包括一固設於該第二容置槽的第二承載柱、一設置於該第二承載柱上的第二結合層以及一設置於該第二結合層上並透過該第二結合層固定於該第二承載柱的平頭研磨顆粒;其中,該尖頭研磨顆粒具有一高於該平頭研磨顆粒的高度,該高度係一從該基座的一上表面至該尖頭研磨顆粒的一尖端頂點的距離,且該第一研磨單元與該第二研磨單元的數量比例介於1:4至4:1之間。 A composite chemical mechanical polishing dresser for trimming a surface of a polishing pad, the composite chemical mechanical polishing dresser comprising: a base comprising a first receiving groove and a second receiving groove; The first grinding unit includes a first supporting post fixed to the first receiving groove, a first bonding layer disposed on the first receiving post, and a first bonding layer disposed on the first bonding layer and transmitting the first bonding layer a plurality of second grinding units are fixed to the first bearing column; and a plurality of second grinding units are disposed on the second receiving column. a second bonding layer and a flat-head abrasive particle disposed on the second bonding layer and fixed to the second carrier through the second bonding layer; wherein the pointed abrasive particle has a higher abrasive grain than the flathead Height, the height is a distance from an upper surface of the base to a tip apex of the pointed abrasive particle, and the ratio of the first grinding unit to the second grinding unit is between 1:4 and 4: Between 1. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第一研磨單元更包括一設置於該第一容置槽與該第一承載柱之間的第一承載柱結合層,該第一承載柱透過該第一承載柱結合層固定於該第一容置槽。 The composite chemical mechanical polishing dresser of claim 1, wherein the first grinding unit further comprises a first bearing column bonding layer disposed between the first receiving groove and the first bearing column. The first carrier column is fixed to the first receiving groove through the first carrier column bonding layer. 如申請專利範圍第2項所述的複合式化學機械研磨修整器,其中該第一承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。 The composite chemical mechanical polishing dresser according to claim 2, wherein the composition of the first carrier-bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials and polymer materials. Group. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第二研磨單元更包括一設置於該第二容置槽與該第二承載柱之間的第二承載柱結合層,該第二承載柱透過該第二承載柱結合層固定於該第二容置槽。 The composite chemical mechanical polishing conditioner according to claim 1, wherein the second grinding unit further comprises a second bearing column bonding layer disposed between the second receiving groove and the second bearing column. The second carrier column is fixed to the second receiving groove through the second carrier column bonding layer. 如申請專利範圍第4項所述的複合式化學機械研磨修整器,其中該第二承載柱結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。 The composite chemical mechanical polishing conditioner according to claim 4, wherein the composition of the second carrier-bonding layer is selected from the group consisting of ceramic materials, brazing materials, plating materials, metal materials and polymer materials. Group. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該基座的材質擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。 The composite chemical mechanical polishing conditioner according to claim 1, wherein the material of the base is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第一承載柱及該第二承載柱的材質擇自於不鏽鋼、金屬材料、塑膠材料及陶瓷材料所組成之群組。 The composite chemical mechanical polishing conditioner according to claim 1, wherein the material of the first carrier column and the second carrier column is selected from the group consisting of stainless steel, metal materials, plastic materials and ceramic materials. . 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該第一結合層及該第二結合層的組成擇自於陶瓷材料、硬焊材料、電鍍材料、金屬材料及高分子材料所組成之群組。 The composite chemical mechanical polishing conditioner according to claim 1, wherein the first bonding layer and the second bonding layer are selected from ceramic materials, brazing materials, plating materials, metal materials, and polymers. A group of materials. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至200μm之間的高度差。 The composite chemical mechanical polishing conditioner of claim 1, wherein the tip apex of the pointed abrasive particle and a flat top mask of the flat abrasive particle have a height difference of between 10 μm and 200 μm. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至100μm之間的高度差。 The composite chemical mechanical polishing conditioner of claim 1, wherein the tip apex of the pointed abrasive particle and a flat top mask of the flat abrasive particle have a height difference of between 10 μm and 100 μm. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該尖頭研磨顆粒的該尖端頂點和該平頭研磨顆粒的一平坦頂面具有一介於10μm至50μm之間的高度差。 The composite chemical mechanical polishing conditioner of claim 1, wherein the tip apex of the pointed abrasive particle and a flat top mask of the flat abrasive particle have a height difference of between 10 μm and 50 μm. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中位於該基座上的該平頭研磨顆粒的一平坦頂面具有一介於10000μm2至160000μm2之間的面積。 The scope of the patent application according to item 1 composite chemical mechanical polishing conditioner, which is located in a flat planar top surface of the head of the abrasive particles on a base having between 10000μm 2 to 160000μm 2 area. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒的數量為介於10顆至200顆之間。 The composite chemical mechanical polishing conditioner according to claim 1, wherein the number of the flat abrasive particles is between 10 and 200. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒的數量介於20顆至40顆之間。 The composite chemical mechanical polishing conditioner according to claim 1, wherein the number of the flat abrasive particles is between 20 and 40. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒的形狀為六面體或六-八面體結構。 The composite chemical mechanical polishing conditioner according to claim 1, wherein the flat abrasive particles have a hexahedral or six-octahedral shape. 如申請專利範圍第1項所述的複合式化學機械研磨修整器,其中該平頭研磨顆粒具有一負斜角或一0度角。 The composite chemical mechanical polishing conditioner of claim 1, wherein the flat abrasive particles have a negative bevel or a 0 degree angle. 如申請專利範圍第16項所述的複合式化學機械研磨修整器,其中該負斜角介於0度至-35度之間。 The composite chemical mechanical polishing conditioner according to claim 16, wherein the negative oblique angle is between 0 degrees and -35 degrees.
TW105126350A 2016-08-18 2016-08-18 A Compound Chemical Mechanical Dresser TWI602651B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200841993A (en) * 2007-04-25 2008-11-01 Diamondfacing Nanotechnology & Associate Co Grinding tool, and its fabricating method
TWM481093U (en) * 2014-02-18 2014-07-01 Kinik Co Chemical mechanical polishing trimmer with adjustable tip height
TWM513087U (en) * 2015-08-19 2015-12-01 中國砂輪企業股份有限公司 Flattened combinational chemical mechanical polishing dresser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200841993A (en) * 2007-04-25 2008-11-01 Diamondfacing Nanotechnology & Associate Co Grinding tool, and its fabricating method
TWM481093U (en) * 2014-02-18 2014-07-01 Kinik Co Chemical mechanical polishing trimmer with adjustable tip height
TWM513087U (en) * 2015-08-19 2015-12-01 中國砂輪企業股份有限公司 Flattened combinational chemical mechanical polishing dresser

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