KR19980087060A - 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는 연마 패드 - Google Patents
화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는 연마 패드 Download PDFInfo
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- KR19980087060A KR19980087060A KR1019980017456A KR19980017456A KR19980087060A KR 19980087060 A KR19980087060 A KR 19980087060A KR 1019980017456 A KR1019980017456 A KR 1019980017456A KR 19980017456 A KR19980017456 A KR 19980017456A KR 19980087060 A KR19980087060 A KR 19980087060A
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- Prior art keywords
- polishing
- polishing pad
- pitch
- width
- groove
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 314
- 239000000126 substance Substances 0.000 title claims abstract description 20
- 239000011295 pitch Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 78
- 238000005192 partition Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 10
- 239000002002 slurry Substances 0.000 description 32
- 239000010410 layer Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 10
- 230000003750 conditioning effect Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 101100366707 Arabidopsis thaliana SSL11 gene Proteins 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 101100366562 Panax ginseng SS12 gene Proteins 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (27)
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드에 있어서,다수의 원형 홈을 가지는 연마 표면을 포함하며, 상기 홈은 적어도 약 0.02 인치의 깊이, 적어도 약 0.015 인치의 폭, 및 적어도 약 0.09 인치의 피치를 가지는 것을 특징으로 하는 연마 패드.
- 제 1항에 있어서, 상기 홈은 0.02 내지 0.05 인치의 깊이를 가지는 것을 특징으로 하는 연마 패드.
- 제 1항에 있어서, 상기 홈은 0.015 내지 0.04 인치의 폭을 가지는 것을 특징으로 하는 연마 패드.
- 제 1항에 있어서, 상기 홈은 0.09 내지 0.24 인치의 피치를 가지는 것을 특징으로 하는 연마 패드.
- 제 1항에 있어서, 상기 패드의 상부층은 0.06 내지 0.12 인치의 두께를 가지는 것을 특징으로 하는 연마 패드.
- 제 1항에 있어서, 상기 홈은 약 0.03 인치의 깊이, 약 0.02 인치의 폭, 및 약 0.12 인치의 피치를 가지는 것을 특징으로 하는 연마 패드.
- 제 1항에 있어서, 상기 홈은 격벽에 의해 분리되며, 상기 홈의 폭 대 상기 격벽의 비율은 0.10 내지 0.25인 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드에 있어서,적어도 약 0.02 인치의 깊이, 적어도 약 0.15 인치의 폭, 및 적어도 약 0.09 인치의 피치를 가지는 나선형 홈을 구비하는 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드에 있어서,제 1 폭과 제 1 피치를 갖는 제 1 다수의 원형 동심 홈을 구비하는 제 1 연마 영역; 및상기 제 1 연마 영역을 둘러싸고 제 2 폭과 제 2 피치를 갖는 제 2 다수의 원형 동심 홈을 구비하는 제 2 연마 영역을 포함하며, 상기 제 2 폭과 제 2 피치 중 적어도 하나는 상기 제 1 폭과 제 1 피치와 다른 것을 특징으로 하는 연마 패드.
- 제 9항에 있어서, 상기 제 2 연마 영역을 둘러싸고 제 3 폭과 제 3 피치를 갖는 제 3 다수의 원형 동심 홈을 구비하는 제 3 연마 영역을 더 포함하는 것을 특징으로 하는 연마 패드.
- 제 10항에 있어서, 상기 제 3 폭 및 제 3 피치는 각각 상기 제 1 폭 및 제 1 피치와 동일한 것을 특징으로 하는 연마 패드.
- 제 11항에 있어서, 상기 제 1 피치는 상기 제 2 피치보다 더 큰 것을 특징으로 하는 연마 패드.
- 제 12항에 있어서, 상기 제 1 피치는 상기 제 2 피치보다 약 2배 더 큰 것을 특징으로 하는 연마 패드.
- 제 11항에 있어서, 상기 제 1 폭은 상기 제 2 폭 보다 작은 것을 특징으로 하는 연마 패드.
- 제 14항에 있어서, 상기 제 2 폭은 상기 제 1 폭보다 약 6배 더 큰 것을 특징으로 하는 연마 패드.
- 제 9항에 있어서, 상기 제 1 다수의 홈은 제 1 다수의 환형 격벽에 의해 분리되고 상기 제 2 다수의 홈은 제 2 다수의 환형 격벽에 의해 분리되며, 상기 제 1 다수의 격벽은 상기 제 1 영역의 표면 영역의 약 75%를 커버하고 상기 제 2 다수의 격벽은 상기 제 2 영역의 표면 영역의 약 50%를 커버하는 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드에 있어서,제 1 연마 영역과 상기 제 1 연마 영역을 둘러싸는 제 2 연마 영역을 가지는 연마 표면, 및 상기 연마 표면에 형성되고 상기 제 1 연마 영역의 제 1 피치와 상기 제 2 연마 영역의 피치와 다른 제 2 피치를 가지는 나선형 홈을 포함하는 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 시스템에서 기판을 연마하기 위한 연마 패드에 있어서,제 1 다수의 원형 동심 홈을 가지는 제 1 연마 영역; 및상기 제 1 연마 영역을 둘러싸고 다수의 사행 곡선 홈을 가지는 제 2 연마 영역을 포함하는 것을 특징으로 하는 연마 패드.
- 제 18항에 있어서, 상기 원형 홈의 피치와 폭 중 적어도 하나는 상기 사행 곡선 홈의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
- 제 18항에 있어서, 상기 사행 곡선 홈은 이들 크기의 1 내지 2배 사이 및 이들 폭의내지 2배 사이의 피치를 가지는 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 장치에서 기판을 연마하기 위한 연마 패드에 있어서,제 1 다수의 원형 동심 홈을 가지는 제 1 연마 영역; 및상기 제 1 연마 영역을 둘러싸고 제 2 다수의 원형 동심 홈을 가지는 제 2 연마 영역을 포함하며, 상기 제 2 다수의 동심 홈의 중심은 상기 제 1 다수의 동심 홈의 중심으로부터 오프셋 되는 것을 특징으로 하는 연마 패드.
- 제 21항에 있어서, 상기 제 1 다수의 홈 중심은 상기 제 2 다수의 홈 피치와 동일한 거리만큼 상기 제 2 다수의 홈 중심으로부터 오프셋 되는 것을 특징으로 하는 연마 패드.
- 제 21항에 있어서, 상기 제 1 다수의 원형 홈의 피치와 폭 중 적어도 하나는 상기 제 2 다수의 원형 홈의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 장치에서 기판을 연마하기 위한 연마 패드에 있어서,제 1 다수의 원형 동심 홈을 가지는 제 1 연마 영역; 및상기 제 1 연마 영역을 둘러싸고 다수의 호형 홈 세그먼트를 가지는 제 2 연마 영역을 포함하며, 상기 호형 홈 세그먼트는 각각의 호형 홈 세그먼트가 인접한 경로에 있는 호형 홈 세그먼트에 방사상으로 중첩하지 않도록 동심 원형 경로를 따라 배치되는 것을 특징으로 하는 연마 패드.
- 제 24항에 있어서, 상기 원형 홈의 피치와 폭 중 적어도 하나는 상기 호형 홈 세그먼트의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
- 화학 기계적 연마 장치에서 기판을 연마하기 위한 연마 패드에 있어서,제 1 다수의 원형 동심 홈을 가지는 제 1 연마 영역; 및상기 제 1 연마 영역을 둘러싸고 나선형 홈을 가지는 제 2 연마 영역을 포함하는 것을 특징으로 하는 연마 패드.
- 제 26항에 있어서, 상기 원형 홈의 피치와 폭 중 적어도 하나는 상기 나선형 홈의 피치 또는 폭과 다른 것을 특징으로 하는 연마 패드.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020060114367A KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/856,948 | 1997-05-15 | ||
US08/856,948 US5921855A (en) | 1997-05-15 | 1997-05-15 | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US8/856,948 | 1997-05-15 | ||
US9/003,315 | 1998-01-06 | ||
US09/003,315 US5984769A (en) | 1997-05-15 | 1998-01-06 | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US09/003,315 | 1998-01-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020060114367A Division KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Publications (2)
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KR19980087060A true KR19980087060A (ko) | 1998-12-05 |
KR100764988B1 KR100764988B1 (ko) | 2007-12-14 |
Family
ID=25324831
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980017456A KR100764988B1 (ko) | 1997-05-15 | 1998-05-15 | 화학기계적연마장치에사용하기위한홈패턴을가지는연마패드 및 연마방법 |
KR1020060114367A KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020060114367A KR100801371B1 (ko) | 1997-05-15 | 2006-11-20 | 화학 기계적 연마 장치에 사용하기 위한 홈 패턴을 가지는연마 패드 |
Country Status (7)
Country | Link |
---|---|
US (6) | US5921855A (ko) |
EP (1) | EP0878270B2 (ko) |
JP (2) | JPH1170463A (ko) |
KR (2) | KR100764988B1 (ko) |
DE (1) | DE69830944T3 (ko) |
SG (1) | SG83679A1 (ko) |
TW (1) | TW430893B (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100553834B1 (ko) * | 1999-12-27 | 2006-02-24 | 삼성전자주식회사 | 연마잔류물의 용이한 배출을 위한 구조를 갖는 화학기계적연마 패드 |
KR100652360B1 (ko) * | 2000-08-25 | 2006-11-30 | 삼성전자주식회사 | 패드를 구비하는 화학 기계적 연마 장치 |
KR100789068B1 (ko) * | 2000-07-25 | 2007-12-26 | 가부시키가이샤 로키 테크노 | 연마 패드 및 그의 제조방법 |
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US9409280B2 (en) | 1997-04-04 | 2016-08-09 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
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US9221154B2 (en) | 1997-04-04 | 2015-12-29 | Chien-Min Sung | Diamond tools and methods for making the same |
US9868100B2 (en) | 1997-04-04 | 2018-01-16 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9463552B2 (en) | 1997-04-04 | 2016-10-11 | Chien-Min Sung | Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods |
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US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6273806B1 (en) * | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US6254456B1 (en) * | 1997-09-26 | 2001-07-03 | Lsi Logic Corporation | Modifying contact areas of a polishing pad to promote uniform removal rates |
JP3076291B2 (ja) * | 1997-12-02 | 2000-08-14 | 日本電気株式会社 | 研磨装置 |
DE19756537A1 (de) * | 1997-12-18 | 1999-07-01 | Wacker Siltronic Halbleitermat | Verfahren zum Erzielen eines möglichst linearen Verschleißverhaltens und Werkzeug mit möglichst linearem Verschleißverhalten |
US6093651A (en) * | 1997-12-23 | 2000-07-25 | Intel Corporation | Polish pad with non-uniform groove depth to improve wafer polish rate uniformity |
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- 1998-05-12 DE DE69830944.8T patent/DE69830944T3/de not_active Expired - Lifetime
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Cited By (3)
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KR100553834B1 (ko) * | 1999-12-27 | 2006-02-24 | 삼성전자주식회사 | 연마잔류물의 용이한 배출을 위한 구조를 갖는 화학기계적연마 패드 |
KR100789068B1 (ko) * | 2000-07-25 | 2007-12-26 | 가부시키가이샤 로키 테크노 | 연마 패드 및 그의 제조방법 |
KR100652360B1 (ko) * | 2000-08-25 | 2006-11-30 | 삼성전자주식회사 | 패드를 구비하는 화학 기계적 연마 장치 |
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DE69830944T3 (de) | 2014-06-26 |
DE69830944D1 (de) | 2005-09-01 |
SG83679A1 (en) | 2001-10-16 |
DE69830944T2 (de) | 2006-04-13 |
KR20060129140A (ko) | 2006-12-15 |
KR100801371B1 (ko) | 2008-02-05 |
JP4937184B2 (ja) | 2012-05-23 |
US20030092371A1 (en) | 2003-05-15 |
EP0878270A3 (en) | 2000-08-23 |
US6520847B2 (en) | 2003-02-18 |
US6645061B1 (en) | 2003-11-11 |
US6824455B2 (en) | 2004-11-30 |
JP2008188768A (ja) | 2008-08-21 |
US6699115B2 (en) | 2004-03-02 |
US20020137450A1 (en) | 2002-09-26 |
KR100764988B1 (ko) | 2007-12-14 |
EP0878270B2 (en) | 2014-03-19 |
EP0878270B1 (en) | 2005-07-27 |
JPH1170463A (ja) | 1999-03-16 |
US5921855A (en) | 1999-07-13 |
US5984769A (en) | 1999-11-16 |
TW430893B (en) | 2001-04-21 |
US20040072516A1 (en) | 2004-04-15 |
EP0878270A2 (en) | 1998-11-18 |
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