KR100680511B1 - 압전 디바이스 - Google Patents
압전 디바이스 Download PDFInfo
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- KR100680511B1 KR100680511B1 KR20067005118A KR20067005118A KR100680511B1 KR 100680511 B1 KR100680511 B1 KR 100680511B1 KR 20067005118 A KR20067005118 A KR 20067005118A KR 20067005118 A KR20067005118 A KR 20067005118A KR 100680511 B1 KR100680511 B1 KR 100680511B1
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- piezoelectric
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- 239000012779 reinforcing material Substances 0.000 claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 230000002093 peripheral effect Effects 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 55
- 229920005989 resin Polymers 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229920002050 silicone resin Polymers 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 41
- 239000010408 film Substances 0.000 description 18
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000007747 plating Methods 0.000 description 9
- 238000009713 electroplating Methods 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 7
- 150000002367 halogens Chemical class 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- -1 acrylic ester Chemical class 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (7)
- 주면(主面)에 압전소자와 상기 압전소자에 접속된 도전패턴이 형성된 소자기판과,상기 소자기판의 상기 주면에 있어서 상기 압전소자의 주위에 배치된 지지층과,상기 지지층에 배치된 후, 상기 소자기판의 상기 주면의 법선방향에서 봤을 때, 상기 소자기판의 외주(外周)로부터 내측이 제거되어, 상기 소자기판의 상기 외주로부터 내측에 상기 소자기판의 상기 외주와 전주(全周)에 걸쳐 간격을 형성해 연장하는 커버와,상기 소자기판으로부터 상기 커버측을, 상기 커버로부터 상기 소자기판의 상기 주면의 둘레부까지 전체적으로 피복하는 절연성의 보강재료와,상기 도전패턴에 전기적으로 접속되고, 상기 커버 및 상기 보강재료를 관통하는 도전부재를 구비한 것을 특징으로 하는 압전 디바이스.
- 제1항에 있어서, 상기 커버는, 상기 소자기판의 상기 주면의 법선방향에서 봤을 때, 상기 지지층의 둘레면보다도 외측까지 연장하는 것을 특징으로 하는 압전 디바이스.
- 제1항 또는 제2항에 있어서, 상기 커버 또는 상기 지지층이, 폴리이미드 수 지, 벤조시클로부텐(benzocyclobutene) 수지 또는 실리콘 수지이고,상기 보강재료가, 에폭시 수지 또는 실리콘 수지인 것을 특징으로 하는 압전 디바이스.
- 복수의 압전 디바이스를 동시에 제조하는 압전 디바이스의 제조방법으로서,주면에 압전소자와 상기 압전소자에 접속된 도전패턴이 형성되고, 상기 압전소자의 주위에 지지층이 형성된 소자기판에 대해서, 상기 지지층 위에 커버를 배치하는 동시에, 상기 커버를 관통하여 상기 도전패턴에 전기적으로 접속된 제1의 도전부재를 형성하는 제1의 공정과,상기 소자기판의 법선방향에서 봤을 때, 한 개의 압전 디바이스가 되는 상기 소자기판의 외주로부터 내측에 상기 소자기판의 상기 외주와 전주에 걸쳐 간격을 형성해 연장하도록, 상기 커버측으로부터 상기 소자기판까지 적어도 상기 커버의 상기 소자기판의 상기 외주로부터 내측을 레이저광으로 제거하는 제2의 공정과,상기 소자기판으로부터 상기 커버측을, 상기 커버측으로부터 상기 소자기판까지 전체적으로 피복하도록, 상기 소자기판 및 상기 커버에 절연성의 보강재료를 배치하는 동시에, 상기 보강재료를 관통하여 상기 제1의 도전부재에 전기적으로 접속된 제2의 도전부재를 형성하는 제3의 공정을 포함하는 것을 특징으로 하는 압전 디바이스의 제조방법.
- 제4항에 있어서, 상기 레이저광은, 파장이 355nm 이하인 것을 특징으로 하는 압전 디바이스의 제조방법.
- 제4항에 있어서, 상기 제2의 공정과 상기 제3의 공정의 사이에,한 개의 압전 디바이스가 되는 경계선을 따라 상기 소자기판의 상기 주면에 형성된 상기 도전패턴을 제거하는 공정을 구비한 것을 특징으로 하는 압전 디바이스의 제조방법.
- 제4항, 제5항 또는 제6항에 있어서, 상기 제3의 공정에 있어서, 상기 소자기판 및 상기 커버에 배치한 상기 보강재료를, 감압 분위기 중에서 경화시키는 것을 특징으로 하는 압전 디바이스의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004207896 | 2004-07-14 | ||
JPJP-P-2004-00207896 | 2004-07-14 |
Publications (2)
Publication Number | Publication Date |
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KR20060095958A KR20060095958A (ko) | 2006-09-05 |
KR100680511B1 true KR100680511B1 (ko) | 2007-02-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR20067005118A KR100680511B1 (ko) | 2004-07-14 | 2005-06-17 | 압전 디바이스 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7259500B2 (ko) |
EP (1) | EP1768256B1 (ko) |
JP (1) | JP4210958B2 (ko) |
KR (1) | KR100680511B1 (ko) |
CN (1) | CN100550618C (ko) |
WO (1) | WO2006006343A1 (ko) |
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EP1976118A4 (en) * | 2006-01-18 | 2011-12-14 | Murata Manufacturing Co | ACOUSTIC SURFACE WAVE DEVICE AND LIMIT ACOUSTIC WAVE DEVICE |
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WO2008018452A1 (fr) * | 2006-08-07 | 2008-02-14 | Kyocera Corporation | Procédé de fabrication d'un dispositif à ondes acoustiques de surface |
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JP3677409B2 (ja) * | 1999-03-05 | 2005-08-03 | 京セラ株式会社 | 弾性表面波装置及びその製造方法 |
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JP2003037473A (ja) * | 2001-07-24 | 2003-02-07 | Toshiba Corp | 弾性表面波装置及びその製造方法 |
TW200302685A (en) * | 2002-01-23 | 2003-08-01 | Matsushita Electric Ind Co Ltd | Circuit component built-in module and method of manufacturing the same |
JP2003264442A (ja) | 2002-03-08 | 2003-09-19 | Toshiba Corp | 弾性表面波装置の製造方法及び多面取りベース基板 |
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JP2004129224A (ja) | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | 圧電部品およびその製造方法 |
JP2004153412A (ja) | 2002-10-29 | 2004-05-27 | Murata Mfg Co Ltd | 弾性表面波装置及びその製造方法 |
DE10256116B4 (de) * | 2002-11-29 | 2005-12-22 | Infineon Technologies Ag | Elektronisches Bauteil und Verfahren zur Herstellung desselben |
JP2004248243A (ja) * | 2002-12-19 | 2004-09-02 | Murata Mfg Co Ltd | 電子部品およびその製造方法 |
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JP4638657B2 (ja) * | 2003-03-19 | 2011-02-23 | 太陽誘電株式会社 | 電子部品内蔵型多層基板 |
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JP2002261582A (ja) | 2000-10-04 | 2002-09-13 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイスおよびその製造方法ならびにそれを用いた回路モジュール |
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