KR100668096B1 - 반도체 레이저장치 - Google Patents

반도체 레이저장치 Download PDF

Info

Publication number
KR100668096B1
KR100668096B1 KR1020040020390A KR20040020390A KR100668096B1 KR 100668096 B1 KR100668096 B1 KR 100668096B1 KR 1020040020390 A KR1020040020390 A KR 1020040020390A KR 20040020390 A KR20040020390 A KR 20040020390A KR 100668096 B1 KR100668096 B1 KR 100668096B1
Authority
KR
South Korea
Prior art keywords
film
dielectric film
reflectance
refractive index
film thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020040020390A
Other languages
English (en)
Korean (ko)
Other versions
KR20040084838A (ko
Inventor
마쓰오카히로마스
쿠니츠구야스히로
니시구치하루미
야기테쓰야
나카가와야스유키
호리에준이치
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20040084838A publication Critical patent/KR20040084838A/ko
Application granted granted Critical
Publication of KR100668096B1 publication Critical patent/KR100668096B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1020040020390A 2003-03-27 2004-03-25 반도체 레이저장치 Expired - Lifetime KR100668096B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00088905 2003-03-27
JP2003088905A JP4097552B2 (ja) 2003-03-27 2003-03-27 半導体レーザ装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020060086769A Division KR100709281B1 (ko) 2003-03-27 2006-09-08 반도체 레이저장치

Publications (2)

Publication Number Publication Date
KR20040084838A KR20040084838A (ko) 2004-10-06
KR100668096B1 true KR100668096B1 (ko) 2007-01-15

Family

ID=32985224

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020040020390A Expired - Lifetime KR100668096B1 (ko) 2003-03-27 2004-03-25 반도체 레이저장치
KR1020060086769A Expired - Lifetime KR100709281B1 (ko) 2003-03-27 2006-09-08 반도체 레이저장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020060086769A Expired - Lifetime KR100709281B1 (ko) 2003-03-27 2006-09-08 반도체 레이저장치

Country Status (6)

Country Link
US (1) US7106775B2 (enExample)
JP (1) JP4097552B2 (enExample)
KR (2) KR100668096B1 (enExample)
CN (2) CN100411262C (enExample)
DE (1) DE102004013109B4 (enExample)
TW (1) TWI239703B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0839698A (ja) * 1994-07-27 1996-02-13 Mitsui Petrochem Ind Ltd 散水用チューブの継手
JP2003243764A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP4286683B2 (ja) * 2004-02-27 2009-07-01 ローム株式会社 半導体レーザ
JP2006128475A (ja) * 2004-10-29 2006-05-18 Mitsubishi Electric Corp 半導体レーザ
JP2006351966A (ja) * 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4923489B2 (ja) 2005-09-05 2012-04-25 三菱電機株式会社 半導体レーザ装置
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) * 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP2007280975A (ja) * 2006-03-13 2007-10-25 Mitsubishi Electric Corp 半導体レーザ
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP4294699B2 (ja) 2007-02-26 2009-07-15 三菱電機株式会社 半導体レーザ装置
JP5162926B2 (ja) 2007-03-07 2013-03-13 三菱電機株式会社 半導体レーザ装置の製造方法
JP4946524B2 (ja) 2007-03-08 2012-06-06 三菱電機株式会社 半導体レーザ装置
JP2009170801A (ja) * 2008-01-18 2009-07-30 Mitsubishi Electric Corp 半導体レーザ
JP5443356B2 (ja) * 2008-07-10 2014-03-19 株式会社東芝 半導体レーザ装置
JP2010219436A (ja) * 2009-03-18 2010-09-30 Sony Corp 多波長半導体レーザおよび光学記録再生装置
DE102015116335B4 (de) 2015-09-28 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
CN106207753B (zh) * 2016-09-06 2019-09-03 青岛海信宽带多媒体技术有限公司 半导体激光芯片及其制造方法、半导体激光装置
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
CN111193184A (zh) * 2019-12-30 2020-05-22 腾景科技股份有限公司 一种镀在半导体激光器腔面用于选模的超窄带超薄反射膜
WO2021187081A1 (ja) * 2020-03-17 2021-09-23 パナソニック株式会社 半導体レーザ素子
KR102397558B1 (ko) * 2020-10-29 2022-05-17 주식회사 오이솔루션 Dfb 반도체 레이저
CN116918197A (zh) * 2021-03-05 2023-10-20 株式会社堀场制作所 半导体激光装置
CN113402275B (zh) * 2021-08-12 2022-09-02 齐鲁工业大学 一种多层bmn介质薄膜材料及其制备方法
US12424819B2 (en) * 2022-05-26 2025-09-23 Arima Lasers Corp. Edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975922A (en) * 1988-06-27 1990-12-04 Sharp Kabushiki Kaisha Multi-layered dielectric film

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3728305A1 (de) * 1987-08-25 1989-03-09 Standard Elektrik Lorenz Ag Halbleiterlaser mit konstanter differentieller quantenausbeute oder konstanter optischer ausgangsleistung
US4925259A (en) * 1988-10-20 1990-05-15 The United States Of America As Represented By The United States Department Of Energy Multilayer optical dielectric coating
JP3080312B2 (ja) 1989-10-31 2000-08-28 ソニー株式会社 半導体レーザの製造方法
JPH0418784A (ja) 1990-02-13 1992-01-22 Fuji Electric Co Ltd 半導体レーザ素子の保護膜
JP3014208B2 (ja) * 1992-02-27 2000-02-28 三菱電機株式会社 半導体光素子
JP3399049B2 (ja) 1992-10-27 2003-04-21 松下電器産業株式会社 半導体レーザ装置
JPH06138303A (ja) * 1992-10-28 1994-05-20 Olympus Optical Co Ltd プラスチック製光学部品の反射防止膜
JP3863577B2 (ja) * 1994-11-14 2006-12-27 三洋電機株式会社 半導体レーザ
JP3470476B2 (ja) * 1995-11-02 2003-11-25 ソニー株式会社 半導体発光素子
JP3538515B2 (ja) 1997-03-04 2004-06-14 シャープ株式会社 半導体レーザ素子
US6020992A (en) * 1997-06-16 2000-02-01 Laser Power Corporation Low absorption coatings for infrared laser optical elements
US6094730A (en) * 1997-10-27 2000-07-25 Hewlett-Packard Company Hardware-assisted firmware tracing method and apparatus
JP4613374B2 (ja) 1999-09-07 2011-01-19 ソニー株式会社 半導体レーザ
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP4033644B2 (ja) 2000-07-18 2008-01-16 日亜化学工業株式会社 窒化ガリウム系発光素子
JP2002094173A (ja) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp 半導体レーザ装置
JP2002223030A (ja) 2001-01-24 2002-08-09 Toshiba Corp 半導体レーザ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4975922A (en) * 1988-06-27 1990-12-04 Sharp Kabushiki Kaisha Multi-layered dielectric film

Also Published As

Publication number Publication date
KR20060102321A (ko) 2006-09-27
CN1543026A (zh) 2004-11-03
CN1819378A (zh) 2006-08-16
KR100709281B1 (ko) 2007-04-19
US20040190576A1 (en) 2004-09-30
DE102004013109A1 (de) 2004-11-11
DE102004013109B4 (de) 2010-02-04
CN100411262C (zh) 2008-08-13
US7106775B2 (en) 2006-09-12
TW200423505A (en) 2004-11-01
TWI239703B (en) 2005-09-11
CN1303732C (zh) 2007-03-07
KR20040084838A (ko) 2004-10-06
JP2004296903A (ja) 2004-10-21
JP4097552B2 (ja) 2008-06-11

Similar Documents

Publication Publication Date Title
KR100668096B1 (ko) 반도체 레이저장치
JP2004296903A5 (enExample)
US6487227B1 (en) Semiconductor laser
KR101098724B1 (ko) 다파장 반도체 레이저 및 그 제조 방법
JP2004327581A (ja) 半導体レーザ装置
WO2025013255A1 (ja) 光半導体装置の製造方法及び低反射率膜の設計方法
US20100238784A1 (en) Multiwavelength semiconductor laser and optical recording/reproducing device
JP2008294090A (ja) 半導体レーザ素子
JP7183484B1 (ja) 光半導体装置の製造方法及び光半導体装置用反射防止膜の設計方法
KR100550924B1 (ko) 다파장 레이저 다이오드
JP4294699B2 (ja) 半導体レーザ装置
US20040047383A1 (en) Semiconductor optical device and semiconductor laser module using the semiconductor optical device
US20240146035A1 (en) Semiconductor laser device
JP2004363534A (ja) 半導体光素子装置およびそれが用いられた半導体レーザモジュール
KR100870949B1 (ko) 반도체 레이저장치
JP4947912B2 (ja) 半導体レーザ素子
JP2006303041A (ja) 半導体レーザ装置
JP2001077456A (ja) 半導体レーザおよび光学部品用コート膜
JP2020031239A5 (enExample)
JP2009176812A (ja) 半導体レーザ

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20040325

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20051121

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20060710

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20051121

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

Patent event date: 20060809

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20060710

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20061016

Appeal identifier: 2006101006992

Request date: 20060809

A107 Divisional application of patent
AMND Amendment
PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20060908

Patent event code: PA01071R01D

PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20060908

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20060809

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20060421

Patent event code: PB09011R02I

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

Patent event date: 20061016

Comment text: Decision to Grant Registration

Patent event code: PB07012S01D

Patent event date: 20060920

Comment text: Transfer of Trial File for Re-examination before a Trial

Patent event code: PB07011S01I

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20070105

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20070108

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20091224

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20101222

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20111216

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20121227

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20121227

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20131218

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20131218

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20141230

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20141230

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20151217

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20151217

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20161219

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20161219

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20171219

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20171219

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20181219

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20181219

Start annual number: 13

End annual number: 13

FPAY Annual fee payment

Payment date: 20191219

Year of fee payment: 14

PR1001 Payment of annual fee

Payment date: 20191219

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20201217

Start annual number: 15

End annual number: 15

PR1001 Payment of annual fee

Payment date: 20211222

Start annual number: 16

End annual number: 16

PR1001 Payment of annual fee

Payment date: 20231204

Start annual number: 18

End annual number: 18

PC1801 Expiration of term

Termination date: 20240925

Termination category: Expiration of duration