DE102004013109B4 - Halbleiterlaservorrichtung - Google Patents
Halbleiterlaservorrichtung Download PDFInfo
- Publication number
- DE102004013109B4 DE102004013109B4 DE102004013109A DE102004013109A DE102004013109B4 DE 102004013109 B4 DE102004013109 B4 DE 102004013109B4 DE 102004013109 A DE102004013109 A DE 102004013109A DE 102004013109 A DE102004013109 A DE 102004013109A DE 102004013109 B4 DE102004013109 B4 DE 102004013109B4
- Authority
- DE
- Germany
- Prior art keywords
- dielectric
- layer
- refractive index
- thickness
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 239000010410 layer Substances 0.000 claims abstract description 192
- 239000002356 single layer Substances 0.000 claims abstract description 94
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- 230000010355 oscillation Effects 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 7
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003-088905 | 2003-03-27 | ||
| JP2003088905A JP4097552B2 (ja) | 2003-03-27 | 2003-03-27 | 半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102004013109A1 DE102004013109A1 (de) | 2004-11-11 |
| DE102004013109B4 true DE102004013109B4 (de) | 2010-02-04 |
Family
ID=32985224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102004013109A Expired - Lifetime DE102004013109B4 (de) | 2003-03-27 | 2004-03-17 | Halbleiterlaservorrichtung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7106775B2 (enExample) |
| JP (1) | JP4097552B2 (enExample) |
| KR (2) | KR100668096B1 (enExample) |
| CN (2) | CN100411262C (enExample) |
| DE (1) | DE102004013109B4 (enExample) |
| TW (1) | TWI239703B (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0839698A (ja) * | 1994-07-27 | 1996-02-13 | Mitsui Petrochem Ind Ltd | 散水用チューブの継手 |
| JP2003243764A (ja) * | 2002-02-19 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
| JP2004327581A (ja) * | 2003-04-23 | 2004-11-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2004327678A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 多波長半導体レーザ及びその製造方法 |
| JP4286683B2 (ja) * | 2004-02-27 | 2009-07-01 | ローム株式会社 | 半導体レーザ |
| JP2006128475A (ja) * | 2004-10-29 | 2006-05-18 | Mitsubishi Electric Corp | 半導体レーザ |
| JP2006351966A (ja) * | 2005-06-17 | 2006-12-28 | Sony Corp | 多波長半導体レーザ素子 |
| JP4923489B2 (ja) | 2005-09-05 | 2012-04-25 | 三菱電機株式会社 | 半導体レーザ装置 |
| KR100853241B1 (ko) * | 2005-12-16 | 2008-08-20 | 샤프 가부시키가이샤 | 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법 |
| JP5191650B2 (ja) * | 2005-12-16 | 2013-05-08 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
| JP5004597B2 (ja) * | 2006-03-06 | 2012-08-22 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
| JP5430826B2 (ja) * | 2006-03-08 | 2014-03-05 | シャープ株式会社 | 窒化物半導体レーザ素子 |
| JP2007280975A (ja) * | 2006-03-13 | 2007-10-25 | Mitsubishi Electric Corp | 半導体レーザ |
| JP4444304B2 (ja) * | 2006-04-24 | 2010-03-31 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
| JP4294699B2 (ja) | 2007-02-26 | 2009-07-15 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP5162926B2 (ja) | 2007-03-07 | 2013-03-13 | 三菱電機株式会社 | 半導体レーザ装置の製造方法 |
| JP4946524B2 (ja) | 2007-03-08 | 2012-06-06 | 三菱電機株式会社 | 半導体レーザ装置 |
| JP2009170801A (ja) * | 2008-01-18 | 2009-07-30 | Mitsubishi Electric Corp | 半導体レーザ |
| JP5443356B2 (ja) * | 2008-07-10 | 2014-03-19 | 株式会社東芝 | 半導体レーザ装置 |
| JP2010219436A (ja) * | 2009-03-18 | 2010-09-30 | Sony Corp | 多波長半導体レーザおよび光学記録再生装置 |
| DE102015116335B4 (de) | 2015-09-28 | 2024-10-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaser |
| CN106207753B (zh) * | 2016-09-06 | 2019-09-03 | 青岛海信宽带多媒体技术有限公司 | 半导体激光芯片及其制造方法、半导体激光装置 |
| DE102017112610A1 (de) * | 2017-06-08 | 2018-12-13 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser |
| CN111193184A (zh) * | 2019-12-30 | 2020-05-22 | 腾景科技股份有限公司 | 一种镀在半导体激光器腔面用于选模的超窄带超薄反射膜 |
| WO2021187081A1 (ja) * | 2020-03-17 | 2021-09-23 | パナソニック株式会社 | 半導体レーザ素子 |
| KR102397558B1 (ko) * | 2020-10-29 | 2022-05-17 | 주식회사 오이솔루션 | Dfb 반도체 레이저 |
| CN116918197A (zh) * | 2021-03-05 | 2023-10-20 | 株式会社堀场制作所 | 半导体激光装置 |
| CN113402275B (zh) * | 2021-08-12 | 2022-09-02 | 齐鲁工业大学 | 一种多层bmn介质薄膜材料及其制备方法 |
| US12424819B2 (en) * | 2022-05-26 | 2025-09-23 | Arima Lasers Corp. | Edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4925259A (en) * | 1988-10-20 | 1990-05-15 | The United States Of America As Represented By The United States Department Of Energy | Multilayer optical dielectric coating |
| US4975922A (en) * | 1988-06-27 | 1990-12-04 | Sharp Kabushiki Kaisha | Multi-layered dielectric film |
| JPH06138303A (ja) * | 1992-10-28 | 1994-05-20 | Olympus Optical Co Ltd | プラスチック製光学部品の反射防止膜 |
| US6020992A (en) * | 1997-06-16 | 2000-02-01 | Laser Power Corporation | Low absorption coatings for infrared laser optical elements |
| US6094730A (en) * | 1997-10-27 | 2000-07-25 | Hewlett-Packard Company | Hardware-assisted firmware tracing method and apparatus |
| JP2001077456A (ja) * | 1999-09-07 | 2001-03-23 | Sony Corp | 半導体レーザおよび光学部品用コート膜 |
| EP1137134A2 (en) * | 2000-03-14 | 2001-09-26 | Kabushiki Kaisha Toshiba | Semiconductor laser device and method of fabricating the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3728305A1 (de) * | 1987-08-25 | 1989-03-09 | Standard Elektrik Lorenz Ag | Halbleiterlaser mit konstanter differentieller quantenausbeute oder konstanter optischer ausgangsleistung |
| JP3080312B2 (ja) | 1989-10-31 | 2000-08-28 | ソニー株式会社 | 半導体レーザの製造方法 |
| JPH0418784A (ja) | 1990-02-13 | 1992-01-22 | Fuji Electric Co Ltd | 半導体レーザ素子の保護膜 |
| JP3014208B2 (ja) * | 1992-02-27 | 2000-02-28 | 三菱電機株式会社 | 半導体光素子 |
| JP3399049B2 (ja) | 1992-10-27 | 2003-04-21 | 松下電器産業株式会社 | 半導体レーザ装置 |
| JP3863577B2 (ja) * | 1994-11-14 | 2006-12-27 | 三洋電機株式会社 | 半導体レーザ |
| JP3470476B2 (ja) * | 1995-11-02 | 2003-11-25 | ソニー株式会社 | 半導体発光素子 |
| JP3538515B2 (ja) | 1997-03-04 | 2004-06-14 | シャープ株式会社 | 半導体レーザ素子 |
| JP4033644B2 (ja) | 2000-07-18 | 2008-01-16 | 日亜化学工業株式会社 | 窒化ガリウム系発光素子 |
| JP2002094173A (ja) * | 2000-09-14 | 2002-03-29 | Mitsubishi Electric Corp | 半導体レーザ装置 |
| JP2002223030A (ja) | 2001-01-24 | 2002-08-09 | Toshiba Corp | 半導体レーザ装置 |
-
2003
- 2003-03-27 JP JP2003088905A patent/JP4097552B2/ja not_active Expired - Lifetime
-
2004
- 2004-02-27 TW TW093105080A patent/TWI239703B/zh not_active IP Right Cessation
- 2004-03-04 US US10/791,889 patent/US7106775B2/en not_active Expired - Lifetime
- 2004-03-17 DE DE102004013109A patent/DE102004013109B4/de not_active Expired - Lifetime
- 2004-03-25 KR KR1020040020390A patent/KR100668096B1/ko not_active Expired - Lifetime
- 2004-03-26 CN CNB2006100550793A patent/CN100411262C/zh not_active Expired - Lifetime
- 2004-03-26 CN CNB2004100313021A patent/CN1303732C/zh not_active Expired - Lifetime
-
2006
- 2006-09-08 KR KR1020060086769A patent/KR100709281B1/ko not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4975922A (en) * | 1988-06-27 | 1990-12-04 | Sharp Kabushiki Kaisha | Multi-layered dielectric film |
| US4925259A (en) * | 1988-10-20 | 1990-05-15 | The United States Of America As Represented By The United States Department Of Energy | Multilayer optical dielectric coating |
| JPH06138303A (ja) * | 1992-10-28 | 1994-05-20 | Olympus Optical Co Ltd | プラスチック製光学部品の反射防止膜 |
| US6020992A (en) * | 1997-06-16 | 2000-02-01 | Laser Power Corporation | Low absorption coatings for infrared laser optical elements |
| US6094730A (en) * | 1997-10-27 | 2000-07-25 | Hewlett-Packard Company | Hardware-assisted firmware tracing method and apparatus |
| JP2001077456A (ja) * | 1999-09-07 | 2001-03-23 | Sony Corp | 半導体レーザおよび光学部品用コート膜 |
| EP1137134A2 (en) * | 2000-03-14 | 2001-09-26 | Kabushiki Kaisha Toshiba | Semiconductor laser device and method of fabricating the same |
Non-Patent Citations (1)
| Title |
|---|
| DE-Buch:"Laser Spectroscopy", W. Demtröder, Springer Verlag, (1981), S. 160-165 * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060102321A (ko) | 2006-09-27 |
| KR100668096B1 (ko) | 2007-01-15 |
| CN1543026A (zh) | 2004-11-03 |
| CN1819378A (zh) | 2006-08-16 |
| KR100709281B1 (ko) | 2007-04-19 |
| US20040190576A1 (en) | 2004-09-30 |
| DE102004013109A1 (de) | 2004-11-11 |
| CN100411262C (zh) | 2008-08-13 |
| US7106775B2 (en) | 2006-09-12 |
| TW200423505A (en) | 2004-11-01 |
| TWI239703B (en) | 2005-09-11 |
| CN1303732C (zh) | 2007-03-07 |
| KR20040084838A (ko) | 2004-10-06 |
| JP2004296903A (ja) | 2004-10-21 |
| JP4097552B2 (ja) | 2008-06-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8380 | Miscellaneous part iii |
Free format text: DIE DRUCKSCHRIFT US 60 94 730 A WURDE BERICHTIGT IN US 60 74 730 A. |
|
| 8364 | No opposition during term of opposition | ||
| R084 | Declaration of willingness to licence | ||
| R071 | Expiry of right |