KR100668096B1 - 반도체 레이저장치 - Google Patents
반도체 레이저장치 Download PDFInfo
- Publication number
- KR100668096B1 KR100668096B1 KR1020040020390A KR20040020390A KR100668096B1 KR 100668096 B1 KR100668096 B1 KR 100668096B1 KR 1020040020390 A KR1020040020390 A KR 1020040020390A KR 20040020390 A KR20040020390 A KR 20040020390A KR 100668096 B1 KR100668096 B1 KR 100668096B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- dielectric film
- reflectance
- refractive index
- film thickness
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 230000010355 oscillation Effects 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 322
- 239000010410 layer Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 10
- 230000003667 anti-reflective effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005253 cladding Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910016036 BaF 2 Inorganic materials 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0287—Facet reflectivity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (3)
- 레이저칩의 양단면에 고반사막 및 저반사막을 각각 갖는 반도체 레이저장치에 있어서,상기 저반사막은, 다층유전체막으로 구성되고, 레이저칩에 접하는 측에서 순서대로, 굴절률 n1의 제1 유전체막, 굴절률 n2의 제2 유전체막, 굴절률 n3의 제3 유전체막, 굴절률 n4의 제4 유전체막을 포함하고,각 굴절률은, n2=n4<n1<n3의 관계를 만족한 것을 특징으로 하는 반도체 레이저장치.
- 레이저칩의 양단면에 고반사막 및 저반사막을 각각 갖는 반도체 레이저장치에 있어서,상기 저반사막은, 다층유전체막으로 구성되고, 레이저칩에 접하는 측에서 순서대로, 굴절률 n1의 제1 유전체막, 굴절률 n2의 제2 유전체막, 굴절률 n3의 제3 유전체막, 굴절률 n4의 제4 유전체막을 포함하고,각 굴절률은, n2=n4<n3<n1의 관계를 만족하는 것을 특징으로 하는 반도체 레이저장치.
- 제 1 항 또는 제 2 항에 있어서,제1∼제4 유전체막의 각 막두께는, 광학길이로 환산하여 1/4 발진파장의 정수배의 두께에 ±30%의 범위로 설정되어 있는 것을 특징으로 하는 반도체 레이저장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00088905 | 2003-03-27 | ||
JP2003088905A JP4097552B2 (ja) | 2003-03-27 | 2003-03-27 | 半導体レーザ装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060086769A Division KR100709281B1 (ko) | 2003-03-27 | 2006-09-08 | 반도체 레이저장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040084838A KR20040084838A (ko) | 2004-10-06 |
KR100668096B1 true KR100668096B1 (ko) | 2007-01-15 |
Family
ID=32985224
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040020390A KR100668096B1 (ko) | 2003-03-27 | 2004-03-25 | 반도체 레이저장치 |
KR1020060086769A KR100709281B1 (ko) | 2003-03-27 | 2006-09-08 | 반도체 레이저장치 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060086769A KR100709281B1 (ko) | 2003-03-27 | 2006-09-08 | 반도체 레이저장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7106775B2 (ko) |
JP (1) | JP4097552B2 (ko) |
KR (2) | KR100668096B1 (ko) |
CN (2) | CN1303732C (ko) |
DE (1) | DE102004013109B4 (ko) |
TW (1) | TWI239703B (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0839698A (ja) * | 1994-07-27 | 1996-02-13 | Mitsui Petrochem Ind Ltd | 散水用チューブの継手 |
JP2003243764A (ja) * | 2002-02-19 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
JP2004327581A (ja) * | 2003-04-23 | 2004-11-18 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP2004327678A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 多波長半導体レーザ及びその製造方法 |
JP4286683B2 (ja) * | 2004-02-27 | 2009-07-01 | ローム株式会社 | 半導体レーザ |
JP2006128475A (ja) * | 2004-10-29 | 2006-05-18 | Mitsubishi Electric Corp | 半導体レーザ |
JP2006351966A (ja) * | 2005-06-17 | 2006-12-28 | Sony Corp | 多波長半導体レーザ素子 |
JP4923489B2 (ja) | 2005-09-05 | 2012-04-25 | 三菱電機株式会社 | 半導体レーザ装置 |
JP5191650B2 (ja) * | 2005-12-16 | 2013-05-08 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
KR100853241B1 (ko) * | 2005-12-16 | 2008-08-20 | 샤프 가부시키가이샤 | 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법 |
JP5004597B2 (ja) * | 2006-03-06 | 2012-08-22 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP5430826B2 (ja) * | 2006-03-08 | 2014-03-05 | シャープ株式会社 | 窒化物半導体レーザ素子 |
JP2007280975A (ja) * | 2006-03-13 | 2007-10-25 | Mitsubishi Electric Corp | 半導体レーザ |
JP4444304B2 (ja) * | 2006-04-24 | 2010-03-31 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
JP4294699B2 (ja) | 2007-02-26 | 2009-07-15 | 三菱電機株式会社 | 半導体レーザ装置 |
JP5162926B2 (ja) | 2007-03-07 | 2013-03-13 | 三菱電機株式会社 | 半導体レーザ装置の製造方法 |
JP4946524B2 (ja) | 2007-03-08 | 2012-06-06 | 三菱電機株式会社 | 半導体レーザ装置 |
JP2009170801A (ja) * | 2008-01-18 | 2009-07-30 | Mitsubishi Electric Corp | 半導体レーザ |
JP5443356B2 (ja) * | 2008-07-10 | 2014-03-19 | 株式会社東芝 | 半導体レーザ装置 |
JP2010219436A (ja) * | 2009-03-18 | 2010-09-30 | Sony Corp | 多波長半導体レーザおよび光学記録再生装置 |
CN106207753B (zh) * | 2016-09-06 | 2019-09-03 | 青岛海信宽带多媒体技术有限公司 | 半导体激光芯片及其制造方法、半导体激光装置 |
DE102017112610A1 (de) * | 2017-06-08 | 2018-12-13 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser |
CN111193184A (zh) * | 2019-12-30 | 2020-05-22 | 腾景科技股份有限公司 | 一种镀在半导体激光器腔面用于选模的超窄带超薄反射膜 |
KR102397558B1 (ko) * | 2020-10-29 | 2022-05-17 | 주식회사 오이솔루션 | Dfb 반도체 레이저 |
CN113402275B (zh) * | 2021-08-12 | 2022-09-02 | 齐鲁工业大学 | 一种多层bmn介质薄膜材料及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4975922A (en) * | 1988-06-27 | 1990-12-04 | Sharp Kabushiki Kaisha | Multi-layered dielectric film |
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DE3728305A1 (de) * | 1987-08-25 | 1989-03-09 | Standard Elektrik Lorenz Ag | Halbleiterlaser mit konstanter differentieller quantenausbeute oder konstanter optischer ausgangsleistung |
US4925259A (en) * | 1988-10-20 | 1990-05-15 | The United States Of America As Represented By The United States Department Of Energy | Multilayer optical dielectric coating |
JP3080312B2 (ja) | 1989-10-31 | 2000-08-28 | ソニー株式会社 | 半導体レーザの製造方法 |
JPH0418784A (ja) | 1990-02-13 | 1992-01-22 | Fuji Electric Co Ltd | 半導体レーザ素子の保護膜 |
JP3014208B2 (ja) * | 1992-02-27 | 2000-02-28 | 三菱電機株式会社 | 半導体光素子 |
JP3399049B2 (ja) | 1992-10-27 | 2003-04-21 | 松下電器産業株式会社 | 半導体レーザ装置 |
JPH06138303A (ja) * | 1992-10-28 | 1994-05-20 | Olympus Optical Co Ltd | プラスチック製光学部品の反射防止膜 |
JP3863577B2 (ja) * | 1994-11-14 | 2006-12-27 | 三洋電機株式会社 | 半導体レーザ |
JP3470476B2 (ja) * | 1995-11-02 | 2003-11-25 | ソニー株式会社 | 半導体発光素子 |
JP3538515B2 (ja) | 1997-03-04 | 2004-06-14 | シャープ株式会社 | 半導体レーザ素子 |
US6020992A (en) * | 1997-06-16 | 2000-02-01 | Laser Power Corporation | Low absorption coatings for infrared laser optical elements |
US6094730A (en) * | 1997-10-27 | 2000-07-25 | Hewlett-Packard Company | Hardware-assisted firmware tracing method and apparatus |
JP4613374B2 (ja) | 1999-09-07 | 2011-01-19 | ソニー株式会社 | 半導体レーザ |
JP2001257413A (ja) * | 2000-03-14 | 2001-09-21 | Toshiba Electronic Engineering Corp | 半導体レーザ装置及びその製造方法 |
JP4033644B2 (ja) | 2000-07-18 | 2008-01-16 | 日亜化学工業株式会社 | 窒化ガリウム系発光素子 |
JP2002094173A (ja) * | 2000-09-14 | 2002-03-29 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP2002223030A (ja) | 2001-01-24 | 2002-08-09 | Toshiba Corp | 半導体レーザ装置 |
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2003
- 2003-03-27 JP JP2003088905A patent/JP4097552B2/ja not_active Expired - Lifetime
-
2004
- 2004-02-27 TW TW093105080A patent/TWI239703B/zh not_active IP Right Cessation
- 2004-03-04 US US10/791,889 patent/US7106775B2/en active Active
- 2004-03-17 DE DE102004013109A patent/DE102004013109B4/de not_active Expired - Lifetime
- 2004-03-25 KR KR1020040020390A patent/KR100668096B1/ko active IP Right Grant
- 2004-03-26 CN CNB2004100313021A patent/CN1303732C/zh not_active Expired - Lifetime
- 2004-03-26 CN CNB2006100550793A patent/CN100411262C/zh not_active Expired - Lifetime
-
2006
- 2006-09-08 KR KR1020060086769A patent/KR100709281B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4975922A (en) * | 1988-06-27 | 1990-12-04 | Sharp Kabushiki Kaisha | Multi-layered dielectric film |
Also Published As
Publication number | Publication date |
---|---|
TW200423505A (en) | 2004-11-01 |
TWI239703B (en) | 2005-09-11 |
CN1303732C (zh) | 2007-03-07 |
CN1543026A (zh) | 2004-11-03 |
KR20040084838A (ko) | 2004-10-06 |
DE102004013109B4 (de) | 2010-02-04 |
JP4097552B2 (ja) | 2008-06-11 |
US7106775B2 (en) | 2006-09-12 |
KR100709281B1 (ko) | 2007-04-19 |
JP2004296903A (ja) | 2004-10-21 |
CN100411262C (zh) | 2008-08-13 |
CN1819378A (zh) | 2006-08-16 |
DE102004013109A1 (de) | 2004-11-11 |
KR20060102321A (ko) | 2006-09-27 |
US20040190576A1 (en) | 2004-09-30 |
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