JP4097552B2 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

Info

Publication number
JP4097552B2
JP4097552B2 JP2003088905A JP2003088905A JP4097552B2 JP 4097552 B2 JP4097552 B2 JP 4097552B2 JP 2003088905 A JP2003088905 A JP 2003088905A JP 2003088905 A JP2003088905 A JP 2003088905A JP 4097552 B2 JP4097552 B2 JP 4097552B2
Authority
JP
Japan
Prior art keywords
film
dielectric film
refractive index
film thickness
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003088905A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004296903A5 (enExample
JP2004296903A (ja
Inventor
裕益 松岡
恭宏 國次
晴美 西口
哲哉 八木
康幸 中川
淳一 堀江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2003088905A priority Critical patent/JP4097552B2/ja
Priority to TW093105080A priority patent/TWI239703B/zh
Priority to US10/791,889 priority patent/US7106775B2/en
Priority to DE102004013109A priority patent/DE102004013109B4/de
Priority to KR1020040020390A priority patent/KR100668096B1/ko
Priority to CNB2006100550793A priority patent/CN100411262C/zh
Priority to CNB2004100313021A priority patent/CN1303732C/zh
Publication of JP2004296903A publication Critical patent/JP2004296903A/ja
Publication of JP2004296903A5 publication Critical patent/JP2004296903A5/ja
Priority to KR1020060086769A priority patent/KR100709281B1/ko
Application granted granted Critical
Publication of JP4097552B2 publication Critical patent/JP4097552B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2003088905A 2003-03-27 2003-03-27 半導体レーザ装置 Expired - Lifetime JP4097552B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003088905A JP4097552B2 (ja) 2003-03-27 2003-03-27 半導体レーザ装置
TW093105080A TWI239703B (en) 2003-03-27 2004-02-27 Semiconductor laser device
US10/791,889 US7106775B2 (en) 2003-03-27 2004-03-04 Semiconductor laser devices
DE102004013109A DE102004013109B4 (de) 2003-03-27 2004-03-17 Halbleiterlaservorrichtung
KR1020040020390A KR100668096B1 (ko) 2003-03-27 2004-03-25 반도체 레이저장치
CNB2006100550793A CN100411262C (zh) 2003-03-27 2004-03-26 半导体激光器装置
CNB2004100313021A CN1303732C (zh) 2003-03-27 2004-03-26 半导体激光器装置
KR1020060086769A KR100709281B1 (ko) 2003-03-27 2006-09-08 반도체 레이저장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003088905A JP4097552B2 (ja) 2003-03-27 2003-03-27 半導体レーザ装置

Publications (3)

Publication Number Publication Date
JP2004296903A JP2004296903A (ja) 2004-10-21
JP2004296903A5 JP2004296903A5 (enExample) 2005-11-04
JP4097552B2 true JP4097552B2 (ja) 2008-06-11

Family

ID=32985224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003088905A Expired - Lifetime JP4097552B2 (ja) 2003-03-27 2003-03-27 半導体レーザ装置

Country Status (6)

Country Link
US (1) US7106775B2 (enExample)
JP (1) JP4097552B2 (enExample)
KR (2) KR100668096B1 (enExample)
CN (2) CN100411262C (enExample)
DE (1) DE102004013109B4 (enExample)
TW (1) TWI239703B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0839698A (ja) * 1994-07-27 1996-02-13 Mitsui Petrochem Ind Ltd 散水用チューブの継手

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243764A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP4286683B2 (ja) * 2004-02-27 2009-07-01 ローム株式会社 半導体レーザ
JP2006128475A (ja) * 2004-10-29 2006-05-18 Mitsubishi Electric Corp 半導体レーザ
JP2006351966A (ja) * 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4923489B2 (ja) 2005-09-05 2012-04-25 三菱電機株式会社 半導体レーザ装置
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) * 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP2007280975A (ja) * 2006-03-13 2007-10-25 Mitsubishi Electric Corp 半導体レーザ
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP4294699B2 (ja) 2007-02-26 2009-07-15 三菱電機株式会社 半導体レーザ装置
JP5162926B2 (ja) 2007-03-07 2013-03-13 三菱電機株式会社 半導体レーザ装置の製造方法
JP4946524B2 (ja) 2007-03-08 2012-06-06 三菱電機株式会社 半導体レーザ装置
JP2009170801A (ja) * 2008-01-18 2009-07-30 Mitsubishi Electric Corp 半導体レーザ
JP5443356B2 (ja) * 2008-07-10 2014-03-19 株式会社東芝 半導体レーザ装置
JP2010219436A (ja) * 2009-03-18 2010-09-30 Sony Corp 多波長半導体レーザおよび光学記録再生装置
DE102015116335B4 (de) 2015-09-28 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
CN106207753B (zh) * 2016-09-06 2019-09-03 青岛海信宽带多媒体技术有限公司 半导体激光芯片及其制造方法、半导体激光装置
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
CN111193184A (zh) * 2019-12-30 2020-05-22 腾景科技股份有限公司 一种镀在半导体激光器腔面用于选模的超窄带超薄反射膜
WO2021187081A1 (ja) * 2020-03-17 2021-09-23 パナソニック株式会社 半導体レーザ素子
KR102397558B1 (ko) * 2020-10-29 2022-05-17 주식회사 오이솔루션 Dfb 반도체 레이저
CN116918197A (zh) * 2021-03-05 2023-10-20 株式会社堀场制作所 半导体激光装置
CN113402275B (zh) * 2021-08-12 2022-09-02 齐鲁工业大学 一种多层bmn介质薄膜材料及其制备方法
US12424819B2 (en) * 2022-05-26 2025-09-23 Arima Lasers Corp. Edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3728305A1 (de) * 1987-08-25 1989-03-09 Standard Elektrik Lorenz Ag Halbleiterlaser mit konstanter differentieller quantenausbeute oder konstanter optischer ausgangsleistung
JPH0642582B2 (ja) * 1988-06-27 1994-06-01 シャープ株式会社 誘電体多層被覆膜
US4925259A (en) * 1988-10-20 1990-05-15 The United States Of America As Represented By The United States Department Of Energy Multilayer optical dielectric coating
JP3080312B2 (ja) 1989-10-31 2000-08-28 ソニー株式会社 半導体レーザの製造方法
JPH0418784A (ja) 1990-02-13 1992-01-22 Fuji Electric Co Ltd 半導体レーザ素子の保護膜
JP3014208B2 (ja) * 1992-02-27 2000-02-28 三菱電機株式会社 半導体光素子
JP3399049B2 (ja) 1992-10-27 2003-04-21 松下電器産業株式会社 半導体レーザ装置
JPH06138303A (ja) * 1992-10-28 1994-05-20 Olympus Optical Co Ltd プラスチック製光学部品の反射防止膜
JP3863577B2 (ja) * 1994-11-14 2006-12-27 三洋電機株式会社 半導体レーザ
JP3470476B2 (ja) * 1995-11-02 2003-11-25 ソニー株式会社 半導体発光素子
JP3538515B2 (ja) 1997-03-04 2004-06-14 シャープ株式会社 半導体レーザ素子
US6020992A (en) * 1997-06-16 2000-02-01 Laser Power Corporation Low absorption coatings for infrared laser optical elements
US6094730A (en) * 1997-10-27 2000-07-25 Hewlett-Packard Company Hardware-assisted firmware tracing method and apparatus
JP4613374B2 (ja) 1999-09-07 2011-01-19 ソニー株式会社 半導体レーザ
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP4033644B2 (ja) 2000-07-18 2008-01-16 日亜化学工業株式会社 窒化ガリウム系発光素子
JP2002094173A (ja) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp 半導体レーザ装置
JP2002223030A (ja) 2001-01-24 2002-08-09 Toshiba Corp 半導体レーザ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0839698A (ja) * 1994-07-27 1996-02-13 Mitsui Petrochem Ind Ltd 散水用チューブの継手

Also Published As

Publication number Publication date
KR20060102321A (ko) 2006-09-27
KR100668096B1 (ko) 2007-01-15
CN1543026A (zh) 2004-11-03
CN1819378A (zh) 2006-08-16
KR100709281B1 (ko) 2007-04-19
US20040190576A1 (en) 2004-09-30
DE102004013109A1 (de) 2004-11-11
DE102004013109B4 (de) 2010-02-04
CN100411262C (zh) 2008-08-13
US7106775B2 (en) 2006-09-12
TW200423505A (en) 2004-11-01
TWI239703B (en) 2005-09-11
CN1303732C (zh) 2007-03-07
KR20040084838A (ko) 2004-10-06
JP2004296903A (ja) 2004-10-21

Similar Documents

Publication Publication Date Title
JP4097552B2 (ja) 半導体レーザ装置
JP2004327581A (ja) 半導体レーザ装置
US6487227B1 (en) Semiconductor laser
US20060239321A1 (en) Semiconductor laser device
KR20040093012A (ko) 다파장 반도체 레이저 및 그 제조 방법
CN101841126B (zh) 多波长半导体激光器和光学记录/再现装置
JP3635880B2 (ja) 面発光型半導体レーザおよびその製造方法
KR100598651B1 (ko) 반도체 레이저장치
JP2008294090A (ja) 半導体レーザ素子
JP4294699B2 (ja) 半導体レーザ装置
US20040047383A1 (en) Semiconductor optical device and semiconductor laser module using the semiconductor optical device
JP2003101126A (ja) 半導体レーザ装置の製造方法及び半導体レーザ装置
KR20040022155A (ko) 반도체 광소자장치 및 그것을 사용한 반도체 레이저 모듈
JP4613374B2 (ja) 半導体レーザ
US20240146035A1 (en) Semiconductor laser device
KR100870949B1 (ko) 반도체 레이저장치
JP2006165478A (ja) 半導体レーザ
JP2006303041A (ja) 半導体レーザ装置
JP2008172088A (ja) 半導体レーザ装置
JP2020031239A5 (enExample)
JP2003031899A (ja) 空気層を含む反射膜を用いたレーザーダイオード及びその製造方法
KR20050020502A (ko) 반도체 레이저 다이오드의 반사막 증착방법
JPH0831663B2 (ja) 半導体レーザ

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041027

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050817

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070918

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071115

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20071115

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080304

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080311

R150 Certificate of patent or registration of utility model

Ref document number: 4097552

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110321

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110321

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120321

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130321

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130321

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140321

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term