CN100411262C - 半导体激光器装置 - Google Patents

半导体激光器装置 Download PDF

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Publication number
CN100411262C
CN100411262C CNB2006100550793A CN200610055079A CN100411262C CN 100411262 C CN100411262 C CN 100411262C CN B2006100550793 A CNB2006100550793 A CN B2006100550793A CN 200610055079 A CN200610055079 A CN 200610055079A CN 100411262 C CN100411262 C CN 100411262C
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China
Prior art keywords
film
refractive index
deielectric
coating
thickness
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Expired - Lifetime
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CNB2006100550793A
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English (en)
Chinese (zh)
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CN1819378A (zh
Inventor
松冈裕益
国次恭宏
西口晴美
八木哲哉
中川康幸
堀江淳一
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN1819378A publication Critical patent/CN1819378A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CNB2006100550793A 2003-03-27 2004-03-26 半导体激光器装置 Expired - Lifetime CN100411262C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003088905A JP4097552B2 (ja) 2003-03-27 2003-03-27 半導体レーザ装置
JP88905/2003 2003-03-27

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100313021A Division CN1303732C (zh) 2003-03-27 2004-03-26 半导体激光器装置

Publications (2)

Publication Number Publication Date
CN1819378A CN1819378A (zh) 2006-08-16
CN100411262C true CN100411262C (zh) 2008-08-13

Family

ID=32985224

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2006100550793A Expired - Lifetime CN100411262C (zh) 2003-03-27 2004-03-26 半导体激光器装置
CNB2004100313021A Expired - Lifetime CN1303732C (zh) 2003-03-27 2004-03-26 半导体激光器装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2004100313021A Expired - Lifetime CN1303732C (zh) 2003-03-27 2004-03-26 半导体激光器装置

Country Status (6)

Country Link
US (1) US7106775B2 (enExample)
JP (1) JP4097552B2 (enExample)
KR (2) KR100668096B1 (enExample)
CN (2) CN100411262C (enExample)
DE (1) DE102004013109B4 (enExample)
TW (1) TWI239703B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111193184A (zh) * 2019-12-30 2020-05-22 腾景科技股份有限公司 一种镀在半导体激光器腔面用于选模的超窄带超薄反射膜

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JPH0839698A (ja) * 1994-07-27 1996-02-13 Mitsui Petrochem Ind Ltd 散水用チューブの継手
JP2003243764A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP2004327581A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP4286683B2 (ja) * 2004-02-27 2009-07-01 ローム株式会社 半導体レーザ
JP2006128475A (ja) * 2004-10-29 2006-05-18 Mitsubishi Electric Corp 半導体レーザ
JP2006351966A (ja) * 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4923489B2 (ja) 2005-09-05 2012-04-25 三菱電機株式会社 半導体レーザ装置
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP2007280975A (ja) * 2006-03-13 2007-10-25 Mitsubishi Electric Corp 半導体レーザ
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP4294699B2 (ja) 2007-02-26 2009-07-15 三菱電機株式会社 半導体レーザ装置
JP5162926B2 (ja) 2007-03-07 2013-03-13 三菱電機株式会社 半導体レーザ装置の製造方法
JP4946524B2 (ja) 2007-03-08 2012-06-06 三菱電機株式会社 半導体レーザ装置
JP2009170801A (ja) * 2008-01-18 2009-07-30 Mitsubishi Electric Corp 半導体レーザ
JP5443356B2 (ja) * 2008-07-10 2014-03-19 株式会社東芝 半導体レーザ装置
JP2010219436A (ja) * 2009-03-18 2010-09-30 Sony Corp 多波長半導体レーザおよび光学記録再生装置
DE102015116335B4 (de) 2015-09-28 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser
CN106207753B (zh) * 2016-09-06 2019-09-03 青岛海信宽带多媒体技术有限公司 半导体激光芯片及其制造方法、半导体激光装置
DE102017112610A1 (de) * 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Betriebsverfahren für einen solchen Halbleiterlaser
CN115280612A (zh) * 2020-03-17 2022-11-01 松下控股株式会社 半导体激光元件
KR102397558B1 (ko) * 2020-10-29 2022-05-17 주식회사 오이솔루션 Dfb 반도체 레이저
WO2022185970A1 (ja) * 2021-03-05 2022-09-09 株式会社堀場製作所 半導体レーザ装置
CN113402275B (zh) * 2021-08-12 2022-09-02 齐鲁工业大学 一种多层bmn介质薄膜材料及其制备方法
US12424819B2 (en) * 2022-05-26 2025-09-23 Arima Lasers Corp. Edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839901A (en) * 1987-08-25 1989-06-13 Alcatel N.V. Semiconductor laser with constant differential quantum efficiency or constant optical power output
US4975922A (en) * 1988-06-27 1990-12-04 Sharp Kabushiki Kaisha Multi-layered dielectric film
US5282219A (en) * 1992-02-27 1994-01-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser structure having a non-reflection film
JPH08139406A (ja) * 1994-11-14 1996-05-31 Sanyo Electric Co Ltd 半導体レーザ
JPH10247756A (ja) * 1997-03-04 1998-09-14 Sharp Corp 半導体レーザ素子
US6628689B2 (en) * 2000-03-14 2003-09-30 Kabushiki Kaisha Toshiba Semiconductor laser device and method of fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925259A (en) 1988-10-20 1990-05-15 The United States Of America As Represented By The United States Department Of Energy Multilayer optical dielectric coating
JP3080312B2 (ja) 1989-10-31 2000-08-28 ソニー株式会社 半導体レーザの製造方法
JPH0418784A (ja) 1990-02-13 1992-01-22 Fuji Electric Co Ltd 半導体レーザ素子の保護膜
JP3399049B2 (ja) 1992-10-27 2003-04-21 松下電器産業株式会社 半導体レーザ装置
JPH06138303A (ja) * 1992-10-28 1994-05-20 Olympus Optical Co Ltd プラスチック製光学部品の反射防止膜
JP3470476B2 (ja) * 1995-11-02 2003-11-25 ソニー株式会社 半導体発光素子
US6020992A (en) 1997-06-16 2000-02-01 Laser Power Corporation Low absorption coatings for infrared laser optical elements
US6094730A (en) * 1997-10-27 2000-07-25 Hewlett-Packard Company Hardware-assisted firmware tracing method and apparatus
JP4613374B2 (ja) 1999-09-07 2011-01-19 ソニー株式会社 半導体レーザ
JP4033644B2 (ja) 2000-07-18 2008-01-16 日亜化学工業株式会社 窒化ガリウム系発光素子
JP2002094173A (ja) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp 半導体レーザ装置
JP2002223030A (ja) 2001-01-24 2002-08-09 Toshiba Corp 半導体レーザ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839901A (en) * 1987-08-25 1989-06-13 Alcatel N.V. Semiconductor laser with constant differential quantum efficiency or constant optical power output
US4975922A (en) * 1988-06-27 1990-12-04 Sharp Kabushiki Kaisha Multi-layered dielectric film
US5282219A (en) * 1992-02-27 1994-01-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser structure having a non-reflection film
JPH08139406A (ja) * 1994-11-14 1996-05-31 Sanyo Electric Co Ltd 半導体レーザ
JPH10247756A (ja) * 1997-03-04 1998-09-14 Sharp Corp 半導体レーザ素子
US6628689B2 (en) * 2000-03-14 2003-09-30 Kabushiki Kaisha Toshiba Semiconductor laser device and method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111193184A (zh) * 2019-12-30 2020-05-22 腾景科技股份有限公司 一种镀在半导体激光器腔面用于选模的超窄带超薄反射膜

Also Published As

Publication number Publication date
US7106775B2 (en) 2006-09-12
JP2004296903A (ja) 2004-10-21
US20040190576A1 (en) 2004-09-30
CN1543026A (zh) 2004-11-03
CN1303732C (zh) 2007-03-07
TWI239703B (en) 2005-09-11
KR100668096B1 (ko) 2007-01-15
KR20060102321A (ko) 2006-09-27
JP4097552B2 (ja) 2008-06-11
CN1819378A (zh) 2006-08-16
TW200423505A (en) 2004-11-01
KR20040084838A (ko) 2004-10-06
DE102004013109A1 (de) 2004-11-11
KR100709281B1 (ko) 2007-04-19
DE102004013109B4 (de) 2010-02-04

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