KR100363081B1 - 박막 형성장치 - Google Patents

박막 형성장치 Download PDF

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Publication number
KR100363081B1
KR100363081B1 KR1019990039839A KR19990039839A KR100363081B1 KR 100363081 B1 KR100363081 B1 KR 100363081B1 KR 1019990039839 A KR1019990039839 A KR 1019990039839A KR 19990039839 A KR19990039839 A KR 19990039839A KR 100363081 B1 KR100363081 B1 KR 100363081B1
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KR
South Korea
Prior art keywords
chamber
dielectric film
thin film
forming apparatus
delete delete
Prior art date
Application number
KR1019990039839A
Other languages
English (en)
Korean (ko)
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KR20010027867A (ko
Inventor
강창석
황두섭
유차영
박영욱
박홍배
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019990039839A priority Critical patent/KR100363081B1/ko
Priority to TW089118593A priority patent/TW515027B/zh
Priority to JP2000280373A priority patent/JP2001148377A/ja
Priority to DE10046021A priority patent/DE10046021B4/de
Publication of KR20010027867A publication Critical patent/KR20010027867A/ko
Priority to US10/295,348 priority patent/US6806183B2/en
Application granted granted Critical
Publication of KR100363081B1 publication Critical patent/KR100363081B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
KR1019990039839A 1999-09-16 1999-09-16 박막 형성장치 KR100363081B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019990039839A KR100363081B1 (ko) 1999-09-16 1999-09-16 박막 형성장치
TW089118593A TW515027B (en) 1999-09-16 2000-09-11 Apparatus for forming thin films and methods for forming capacitors on semiconductor substrates using same
JP2000280373A JP2001148377A (ja) 1999-09-16 2000-09-14 薄膜形成装置及びこれを用いた半導体素子のキャパシタ形成方法
DE10046021A DE10046021B4 (de) 1999-09-16 2000-09-18 Verfahren zur Herstellung von Kondensatoren auf Halbleitersubstraten in einer Einrichtung zur Bildung von Dünnfilmen
US10/295,348 US6806183B2 (en) 1999-09-16 2002-11-15 Methods for forming capacitors on semiconductor substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990039839A KR100363081B1 (ko) 1999-09-16 1999-09-16 박막 형성장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0021685A Division KR100382742B1 (ko) 2002-04-19 2002-04-19 반도체 소자의 커패시터 형성방법

Publications (2)

Publication Number Publication Date
KR20010027867A KR20010027867A (ko) 2001-04-06
KR100363081B1 true KR100363081B1 (ko) 2002-11-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990039839A KR100363081B1 (ko) 1999-09-16 1999-09-16 박막 형성장치

Country Status (5)

Country Link
US (1) US6806183B2 (ja)
JP (1) JP2001148377A (ja)
KR (1) KR100363081B1 (ja)
DE (1) DE10046021B4 (ja)
TW (1) TW515027B (ja)

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KR100415977B1 (ko) * 2001-02-08 2004-01-24 한국과학기술연구원 Ｅｃｒ을 이용한 도전성 고분자수지의 제조방법

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US6893978B1 (en) * 2002-12-03 2005-05-17 Silicon Magnetic Systems Method for oxidizing a metal layer
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JP4709115B2 (ja) * 2005-10-12 2011-06-22 財団法人ソウル大学校産学協力財団 ルテニウム電極と二酸化チタン誘電膜とを利用する半導体素子のキャパシタ及びその製造方法
JP4984558B2 (ja) * 2006-02-08 2012-07-25 富士通セミコンダクター株式会社 半導体装置の製造方法
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KR20070110748A (ko) * 2006-05-15 2007-11-20 주식회사 하이닉스반도체 커패시터 형성 방법
SK51082006A3 (sk) * 2006-12-05 2008-07-07 Fakulta Matematiky, Fyziky A Informatiky Univerzitfakulta Matematiky, Fyziky A Informatiky Univerzity Komensk�Hoy Komensk�Ho Zariadenie a spôsob úpravy povrchov kovov a metaloZariadenie a spôsob úpravy povrchov kovov a metaloidov, oxidov kovov a oxidov metaloidov a nitridovidov, oxidov kovov a oxidov metaloidov a nitridovkovov a nitridov metaloidovkovov a nitridov metaloidov
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JP2008244018A (ja) * 2007-03-26 2008-10-09 Ulvac Japan Ltd 半導体装置の製造方法
JP2009260333A (ja) * 2008-03-26 2009-11-05 Meidensha Corp 酸化膜改質方法とその装置及びプロセス装置
US8304823B2 (en) * 2008-04-21 2012-11-06 Namlab Ggmbh Integrated circuit including a ferroelectric memory cell and method of manufacturing the same
KR100992304B1 (ko) 2008-08-29 2010-11-05 삼성전기주식회사 롤투롤타입의 박막패턴 형성장치
JP5504663B2 (ja) * 2009-03-25 2014-05-28 富士通セミコンダクター株式会社 半導体装置の製造方法
US8404048B2 (en) * 2011-03-11 2013-03-26 Applied Materials, Inc. Off-angled heating of the underside of a substrate using a lamp assembly
US9053802B2 (en) 2013-06-04 2015-06-09 Namlab Ggmbh Ferroelectric memory cell for an integrated circuit
JP2016004610A (ja) * 2014-06-13 2016-01-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 電池用電極及びその製造方法
KR102071502B1 (ko) * 2015-09-30 2020-01-30 주식회사 원익아이피에스 반도체 소자의 제조방법
CN109494302B (zh) * 2017-09-12 2024-04-05 松下知识产权经营株式会社 电容元件、图像传感器以及电容元件的制造方法

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Publication number Priority date Publication date Assignee Title
KR100415977B1 (ko) * 2001-02-08 2004-01-24 한국과학기술연구원 Ｅｃｒ을 이용한 도전성 고분자수지의 제조방법

Also Published As

Publication number Publication date
KR20010027867A (ko) 2001-04-06
DE10046021B4 (de) 2008-08-21
US20030096472A1 (en) 2003-05-22
JP2001148377A (ja) 2001-05-29
TW515027B (en) 2002-12-21
DE10046021A1 (de) 2001-05-10
US6806183B2 (en) 2004-10-19

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