JP2008153497A - 誘電体薄膜キャパシタの製造方法 - Google Patents
誘電体薄膜キャパシタの製造方法 Download PDFInfo
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- JP2008153497A JP2008153497A JP2006341098A JP2006341098A JP2008153497A JP 2008153497 A JP2008153497 A JP 2008153497A JP 2006341098 A JP2006341098 A JP 2006341098A JP 2006341098 A JP2006341098 A JP 2006341098A JP 2008153497 A JP2008153497 A JP 2008153497A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 96
- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 126
- 239000011241 protective layer Substances 0.000 claims abstract description 67
- 238000001312 dry etching Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 28
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 238000005336 cracking Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 238000004380 ashing Methods 0.000 description 19
- 238000000992 sputter etching Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 15
- 239000004020 conductor Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000000059 patterning Methods 0.000 description 6
- 238000005979 thermal decomposition reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
【解決手段】 そしてさらに、キャパシタ構造体の上にテーパ上のレジストパターンを形成してドライエッチングを行うことにより、下部電極、誘電体層及び上部電極を順に積層してなるキャパシタ構造体の端部をテーパ状に形成する。さらに、テーパ加工後に熱処理を行う。
【選択図】 図1
Description
以下において添付図面を参照しつつ本発明を実施するための最良の形態について説明する。図1〜3は本発明に係る誘電体薄膜キャパシタの製造工程を示す断面図である。
〔第2の実施形態〕
以下において添付図面を参照しつつ本発明の第2の実施形態について説明する。図4〜6は本発明に係る誘電体薄膜キャパシタの製造工程を示す断面図である。なお、図4〜6においては図1〜3と共通ないし対応する部分には同一の符号を付し、適宜説明を省略する。
11 密着層
20 キャパシタ構造体
21 下部電極
22 誘電体層
23 上部電極
31,32,33 レジストパターン
41 無機保護層
42 有機保護層
Claims (3)
- 基板上に順に下部電極、誘電体層および上部電極を形成し、前記誘電体層を前記下部電極および前記上部電極で狭接したキャパシタ構造体を形成する工程と、
前記キャパシタ構造体の上にレジストパターンを形成する工程と、
前記レジストパターンをマスクとして前記キャパシタ構造体の一部をドライエッチングによって除去する工程と、
前記レジストパターンを除去した後に前記前記キャパシタ構造体を酸素雰囲気中で加熱する工程と、
前記キャパシタ構造体の少なくとも一部を覆う保護層を形成する工程と、
を有する誘電体薄膜キャパシタの製造方法であって、
前記レジストパターンの側面の少なくとも一部は、前記キャパシタ構造体に接する面から離れるにつれて前記キャパシタ構造体の縁端方向から中心方向に傾斜しているとともに、
前記キャパシタ構造体の一部を除去する工程においては、前記キャパシタ構造体の側面の少なくとも一部が前記基板に接する面から離れるにつれて前記キャパシタ構造体の縁端方向から中心方向に傾斜するように前記キャパシタ構造体の一部が除去される誘電体薄膜キャパシタの製造方法。 - 前記保護層は窒化ケイ素からなる請求項1に記載された誘電体薄膜キャパシタの製造方法。
- 前記キャパシタ構造体の一部をドライエッチングで除去する工程においては、上部電極および誘電体層を一括して除去する請求項1あるいは請求項2に記載された誘電体薄膜キャパシタの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006341098A JP2008153497A (ja) | 2006-12-19 | 2006-12-19 | 誘電体薄膜キャパシタの製造方法 |
US11/954,696 US20080145996A1 (en) | 2006-12-19 | 2007-12-12 | Method for Manufacturing Dielectric Thin Film Capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006341098A JP2008153497A (ja) | 2006-12-19 | 2006-12-19 | 誘電体薄膜キャパシタの製造方法 |
Publications (1)
Publication Number | Publication Date |
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JP2008153497A true JP2008153497A (ja) | 2008-07-03 |
Family
ID=39527838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006341098A Pending JP2008153497A (ja) | 2006-12-19 | 2006-12-19 | 誘電体薄膜キャパシタの製造方法 |
Country Status (2)
Country | Link |
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US (1) | US20080145996A1 (ja) |
JP (1) | JP2008153497A (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9711283B2 (en) | 2014-05-12 | 2017-07-18 | Tdk Corporation | Thin film capacitor |
US9831039B2 (en) | 2014-12-05 | 2017-11-28 | Tdk Corporation | Thin film capacitor |
WO2018008625A1 (ja) * | 2016-07-07 | 2018-01-11 | 株式会社村田製作所 | キャパシタ |
JP2018063978A (ja) * | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜コンデンサ |
JP2018063980A (ja) * | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜コンデンサ |
JP2018063989A (ja) * | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜キャパシタ |
JP2018063979A (ja) * | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜コンデンサ |
JP2018152599A (ja) * | 2016-06-22 | 2018-09-27 | 株式会社村田製作所 | キャパシタ |
JP2019160936A (ja) * | 2018-03-09 | 2019-09-19 | Tdk株式会社 | 薄膜コンデンサの製造方法及び薄膜コンデンサ |
JP2019165069A (ja) * | 2018-03-19 | 2019-09-26 | Tdk株式会社 | 薄膜コンデンサおよび薄膜コンデンサの製造方法 |
JP2019165070A (ja) * | 2018-03-19 | 2019-09-26 | Tdk株式会社 | 薄膜コンデンサおよび薄膜コンデンサの製造方法 |
JP2020202307A (ja) * | 2019-06-11 | 2020-12-17 | 株式会社村田製作所 | キャパシタ |
WO2021033664A1 (ja) * | 2019-08-21 | 2021-02-25 | 株式会社村田製作所 | 半導体装置 |
JPWO2021149688A1 (ja) * | 2020-01-20 | 2021-07-29 | ||
WO2022239717A1 (ja) * | 2021-05-10 | 2022-11-17 | 株式会社村田製作所 | 半導体装置 |
US12100671B2 (en) | 2019-08-21 | 2024-09-24 | Murata Manufacturing Co., Ltd. | Semiconductor device |
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US8680649B2 (en) * | 2008-08-22 | 2014-03-25 | Stmicroelectronics (Tours) Sas | Multi-layer film capacitor with tapered film sidewalls |
US20100224960A1 (en) * | 2009-03-04 | 2010-09-09 | Kevin John Fischer | Embedded capacitor device and methods of fabrication |
CN102473674B (zh) * | 2009-07-09 | 2015-08-12 | 株式会社村田制作所 | 反熔丝元件 |
JP5234521B2 (ja) * | 2009-08-21 | 2013-07-10 | Tdk株式会社 | 電子部品及びその製造方法 |
US8710658B2 (en) * | 2011-11-18 | 2014-04-29 | Cambridge Silicon Radio Limited | Under bump passive components in wafer level packaging |
JP6862886B2 (ja) | 2017-02-13 | 2021-04-21 | Tdk株式会社 | 電子部品内蔵基板 |
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JP2018137310A (ja) | 2017-02-21 | 2018-08-30 | Tdk株式会社 | 薄膜キャパシタ |
JP2018137311A (ja) | 2017-02-21 | 2018-08-30 | Tdk株式会社 | 薄膜キャパシタ |
WO2018221228A1 (ja) | 2017-05-31 | 2018-12-06 | Tdk株式会社 | 薄膜コンデンサ及び薄膜コンデンサの製造方法 |
US20210020587A1 (en) * | 2019-06-11 | 2021-01-21 | Skyworks Solutions, Inc. | Moisture barrier for metal insulator metal capacitors and integrated circuit having the same |
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JP3256374B2 (ja) * | 1994-05-27 | 2002-02-12 | 本田技研工業株式会社 | マルチビーム・レーダ装置 |
JP3504046B2 (ja) * | 1995-12-05 | 2004-03-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
EP1150354A4 (en) * | 1999-02-04 | 2002-08-28 | Rohm Co Ltd | CAPACITOR AND MANUFACTURING METHOD THEREOF |
US6734120B1 (en) * | 1999-02-19 | 2004-05-11 | Axcelis Technologies, Inc. | Method of photoresist ash residue removal |
US6281543B1 (en) * | 1999-08-31 | 2001-08-28 | Micron Technology, Inc. | Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same |
KR100363081B1 (ko) * | 1999-09-16 | 2002-11-30 | 삼성전자 주식회사 | 박막 형성장치 |
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JP4166013B2 (ja) * | 2001-12-26 | 2008-10-15 | 富士通株式会社 | 薄膜キャパシタ製造方法 |
JP2004146772A (ja) * | 2002-03-18 | 2004-05-20 | Fujitsu Ltd | 半導体装置及びその製造方法 |
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US7223665B2 (en) * | 2003-09-04 | 2007-05-29 | Murata Manufacturing Co., Ltd. | Method for manufacturing dielectric thin film capacitor |
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-
2006
- 2006-12-19 JP JP2006341098A patent/JP2008153497A/ja active Pending
-
2007
- 2007-12-12 US US11/954,696 patent/US20080145996A1/en not_active Abandoned
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9711283B2 (en) | 2014-05-12 | 2017-07-18 | Tdk Corporation | Thin film capacitor |
US9831039B2 (en) | 2014-12-05 | 2017-11-28 | Tdk Corporation | Thin film capacitor |
JP2018152599A (ja) * | 2016-06-22 | 2018-09-27 | 株式会社村田製作所 | キャパシタ |
WO2018008625A1 (ja) * | 2016-07-07 | 2018-01-11 | 株式会社村田製作所 | キャパシタ |
JPWO2018008625A1 (ja) * | 2016-07-07 | 2018-10-11 | 株式会社村田製作所 | キャパシタ |
JP2018063979A (ja) * | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜コンデンサ |
JP2018063989A (ja) * | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜キャパシタ |
JP2018063980A (ja) * | 2016-10-11 | 2018-04-19 | Tdk株式会社 | 薄膜コンデンサ |
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