WO2022239717A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2022239717A1 WO2022239717A1 PCT/JP2022/019619 JP2022019619W WO2022239717A1 WO 2022239717 A1 WO2022239717 A1 WO 2022239717A1 JP 2022019619 W JP2022019619 W JP 2022019619W WO 2022239717 A1 WO2022239717 A1 WO 2022239717A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000010410 layer Substances 0.000 claims abstract description 315
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000011241 protective layer Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 abstract description 76
- 239000012528 membrane Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 104
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- 239000000463 material Substances 0.000 description 16
- 239000010949 copper Substances 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000000470 constituent Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
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- 229910052718 tin Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004140 HfO Inorganic materials 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 239000010409 thin film Substances 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 SiO 2 Chemical class 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Definitions
- the present invention relates to semiconductor devices.
- a MIM (Metal Insulator Metal) capacitor for example, is known as a typical capacitor element used in a semiconductor integrated circuit.
- a MIM capacitor is a capacitor having a parallel plate type structure in which an insulator is sandwiched between a lower electrode and an upper electrode.
- Patent Document 1 discloses a lower electrode formed on a substrate, a dielectric thin film formed on the lower electrode, an upper electrode formed on the dielectric thin film, and a substrate including the upper electrode. and a pair of electrode terminals respectively connected to the electrodes and arranged so that their ends are located on the same plane.
- the electrode terminal which is the external electrode, protrudes the most. Therefore, for example, when mounting a semiconductor device such as such a capacitor on a wiring board, a load is applied to the most projecting external electrode. If an excessive load is applied to the semiconductor device due to the load being transmitted in the thickness direction of the semiconductor device through the external electrodes, cracks may occur in the dielectric film and the semiconductor device may short-circuit. .
- An object of the present invention is to provide a semiconductor device in which cracks occurring in a dielectric film are suppressed when a load is applied to an external electrode. .
- a semiconductor device of the present invention comprises a substrate, a first electrode layer provided on the substrate, a dielectric film provided on the first electrode layer and covering an end portion of the first electrode layer, and a second electrode layer provided on a body film, a moisture-resistant film provided on the dielectric film and the second electrode layer, a protective layer provided on the moisture-resistant film, and penetrating the protective layer an external electrode;
- the first electrode layer has a first main surface on the substrate side, a second main surface on the dielectric film side, and side surfaces connecting the first main surface and the second main surface.
- the second electrode layer has a first main surface on the dielectric film side, a second main surface on the moisture-resistant film side, and a side surface connecting the first main surface and the second main surface. At least part of the side surface of the second electrode layer has a tapered shape that is inwardly inclined from the first main surface toward the second main surface.
- FIG. 1 is a cross-sectional view schematically showing an example of a capacitor according to a first embodiment of the invention.
- FIG. 2 is a plan view schematically showing an example of the capacitor according to the first embodiment of the invention.
- FIG. 3 is an enlarged cross-sectional view of a side surface of a second electrode layer forming the capacitor shown in FIG. 4-1 is a graph showing the relationship between the taper angle ⁇ A and the stress at point A.
- FIG. FIG. 4-2 is a schematic diagram for explaining a method of measuring the taper angle ⁇ A .
- FIG. 5 is a cross-sectional view schematically showing an example of a capacitor according to the second embodiment of the invention.
- FIG. 6 is a cross-sectional view schematically showing an example of a capacitor according to the third embodiment of the invention.
- 7 is a cross-sectional view enlarging the side surfaces of the first electrode layer and the second electrode layer that constitute the capacitor shown in FIG. 6.
- FIG. 8 is a cross-sectional view schematically showing an example of a capacitor according to a fourth embodiment of the invention.
- 9 is an enlarged cross-sectional view of a side surface of a third electrode layer forming the capacitor shown in FIG. 8.
- FIG. 10 is a cross-sectional view schematically showing an example of a capacitor according to the fifth embodiment of the invention.
- FIG. 11 is a cross-sectional view schematically showing an example of a capacitor according to the sixth embodiment of the invention.
- a semiconductor device according to the present invention will be described below.
- the present invention is not limited to the following configurations, and can be appropriately modified and applied without changing the gist of the present invention.
- a combination of two or more of the individual preferred configurations of the present invention described below is also the present invention.
- the semiconductor device of the present invention when each embodiment is not particularly distinguished, it is simply referred to as "the semiconductor device of the present invention".
- the semiconductor device of the present invention and the shape, arrangement, etc. of each component are not limited to the illustrated examples.
- the semiconductor device of the present invention may be a capacitor itself (that is, a capacitor element) or a device including a capacitor.
- the second electrode layer is composed of a single conductive layer.
- FIG. 1 is a cross-sectional view schematically showing an example of the capacitor according to the first embodiment of the invention.
- FIG. 2 is a plan view schematically showing an example of the capacitor according to the first embodiment of the invention.
- FIG. 1 is a cross-sectional view of the capacitor shown in FIG. 2 along line II.
- the length direction, width direction, and thickness direction of a capacitor are defined by arrows L, W, and T, respectively, as shown in FIGS. direction.
- the length direction L, the width direction W, and the thickness direction T are orthogonal to each other.
- the capacitor 1 shown in FIGS. 1 and 2 includes a substrate 10, an insulating film 21 provided on the substrate 10, a first electrode layer 22 provided on the insulating film 21, and a a dielectric film 23 covering the end of the first electrode layer 22; a second electrode layer 24 provided on the dielectric film 23; It comprises a film 25 , a protective layer 26 provided on the moisture resistant film 25 , and an external electrode 27 passing through the protective layer 26 .
- the external electrodes 27 include first external electrodes 27A connected to the first electrode layer 22 and second external electrodes 27B connected to the second electrode layer 24 .
- the first external electrode 27A penetrates the protective layer 26, the moisture-resistant film 25 and the dielectric film 23, and the second external electrode 27B penetrates the protective layer 26 and the moisture-resistant film 25. As shown in FIG.
- the substrate 10 is not particularly limited, but is preferably a semiconductor substrate such as a silicon substrate or a gallium arsenide substrate, or an insulating substrate such as glass or alumina.
- the insulating film 21 may be provided so as to cover the entire one main surface of the substrate 10 or may be provided so as to cover a part thereof, but is larger than the first electrode layer 22 and It needs to be provided in a region that overlaps the entire area of one electrode layer 22 .
- the substrate 10 is an insulating substrate such as glass or alumina, the insulating film 21 may not be provided.
- the material forming the insulating film 21 is not particularly limited, but preferably includes SiO 2 , SiN, Al 2 O 3 , HfO 2 , Ta 2 O 5 , ZrO 2 and the like.
- the first electrode layer 22 is provided at a position away from the edge of the substrate 10 . That is, the edge of the first electrode layer 22 is located inside the edge of the substrate 10 .
- the first electrode layer 22 has a first main surface 22a on the substrate 10 side, a second main surface 22b on the dielectric film 23 side, and a side surface 22c connecting the first main surface 22a and the second main surface 22b. have.
- the first electrode layer 22 may have a structure consisting of a single conductive layer, or a structure consisting of multiple conductive layers laminated in the thickness direction (direction indicated by arrow T in FIGS. 1 and 2). may have
- the material forming the first electrode layer 22 is not particularly limited, but Cu, Ag, Au, Al, Ni, Cr, Ti, or alloys containing at least one of these metals are preferred.
- the dielectric film 23 is provided so as to cover the first electrode layer 22 except for the opening.
- the dielectric film 23 is also provided on the surface of the insulating film 21 from the end of the first electrode layer 22 to the end of the insulating film 21 . That is, the dielectric film 23 is provided so as to cover the end portion of the first electrode layer 22 .
- the dielectric film 23 may also be provided on the surface of the substrate 10 from the edge of the insulating film 21 to the edge of the substrate 10 . That is, the dielectric film 23 may be provided so as to cover the end portion of the insulating film 21 .
- the material forming the dielectric film 23 is not particularly limited, but oxides or nitrides such as SiO 2 , SiN, Al 2 O 3 , HfO 2 and Ta 2 O 5 are preferred.
- the second electrode layer 24 is provided facing the first electrode layer 22 with the dielectric film 23 interposed therebetween.
- the second electrode layer 24 includes a first main surface 24a on the dielectric film 23 side, a second main surface 24b on the moisture-resistant film 25 side, a side surface 24c connecting the first main surface 24a and the second main surface 24b, have
- the second electrode layer 24 has a structure consisting of a single conductive layer.
- the material forming the second electrode layer 24 is not particularly limited, but Cu, Ag, Au, Al, Ni, Cr, Ti, or alloys containing at least one of these metals are preferred.
- FIG. 3 is a cross-sectional view enlarging the side surface of the second electrode layer that constitutes the capacitor shown in FIG.
- the side surface 24c of the second electrode layer 24 is tapered inwardly from the first main surface 24a on the dielectric film 23 side toward the second main surface 24b on the moisture-resistant film 25 side. have.
- the moisture-resistant film 25 is provided so as to cover the dielectric film 23 and the second electrode layer 24 except for the opening. By providing the moisture-resistant film 25, the moisture resistance of the capacitor element, particularly the dielectric film 23, is enhanced.
- the material forming the moisture-resistant film 25 is not particularly limited, but moisture-resistant materials such as SiO 2 and SiN are preferred.
- the protective layer 26 has a position overlapping the openings of the dielectric film 23 and the moisture-resistant film 25 (openings overlapping the first electrode layer 22), and a position overlapping the openings of the moisture-resistant film 25 (openings overlapping the second electrode layer 24). is provided with an opening.
- the provision of the protective layer 26 protects the capacitor element, particularly the dielectric film 23, from moisture.
- the material constituting the protective layer 26 is not particularly limited, but preferably includes resin materials such as polyimide resin and resin in solder resist.
- the material that constitutes the external electrode 27 is not particularly limited, but Cu, Ni, Ag, Au, Al, or the like is preferable.
- the external electrode 27 may have a single layer structure or a multilayer structure.
- the outermost surface of the external electrode 27 is preferably made of Au or Sn.
- the first external electrode 27A has a multilayer structure, as shown in FIG. , may have
- Examples of the seed layer 28a of the first external electrode 27A include a laminate (Ti/Cu) of a conductor layer made of titanium (Ti) and a conductor layer made of copper (Cu).
- Examples of the constituent material of the first plating layer 28b of the first external electrode 27A include nickel (Ni).
- Examples of the constituent material of the second plating layer 28c of the first external electrode 27A include gold (Au) and tin (Sn).
- the second external electrode 27B When the second external electrode 27B has a multilayer structure, as shown in FIG. 1, the second external electrode 27B includes a seed layer 28a, a first plating layer 28b, and a second plating layer 28c in this order from the substrate 10 side. , may have
- a laminate (Ti/Cu) of a conductor layer made of titanium (Ti) and a conductor layer made of copper (Cu) can be used.
- Examples of the constituent material of the first plated layer 28b of the second external electrode 27B include nickel (Ni).
- Examples of the constituent material of the second plating layer 28c of the second external electrode 27B include gold (Au) and tin (Sn).
- the constituent material of the first external electrode 27A and the constituent material of the second external electrode 27B may be the same as or different from each other.
- a first resin body 31 may be provided between the first external electrode 27A and the second external electrode 27B in plan view from the thickness direction T.
- the first resin body 31 is provided on the surface of the protective layer 26, for example.
- the tip of the first resin body 31 is preferably positioned higher than the tips of the first external electrode 27A and the second external electrode 27B in the thickness direction T, as shown in FIG.
- the first resin body 31 is mounted on the wiring board side (for example, the upper surface of the wiring board, land, solder, etc.) before the first external electrode 27A and the second external electrode 27B. will come into contact with Therefore, the load is applied to the first resin body 31, and the load applied to the first external electrode 27A and the second external electrode 27B is suppressed.
- the load is suppressed from being transmitted to the capacitor element via the first external electrode 27A and the second external electrode 27B, so damage to the capacitor element, particularly damage to the dielectric film 23 is suppressed.
- the first resin body 31 preferably contains at least one resin selected from the group consisting of resin in solder resist, polyimide resin, polyimideamide resin and epoxy resin.
- the first resin body 31 is preferably a cured product of photosensitive resin.
- the first resin body 31 includes a first wall portion 31a provided on the first external electrode 27A side and a second wall portion 31b provided on the second external electrode 27B side and separated from the first wall portion 31a. may contain. In plan view as shown in FIG. 2, the first wall portion 31a and the second wall portion 31b are preferably provided in parallel.
- the first wall portion 31a may be provided with an opening communicating with the space separating the first wall portion 31a and the second wall portion 31b.
- the second wall portion 31b may be provided with an opening communicating with the space separating the first wall portion 31a and the second wall portion 31b.
- a second resin body 32 may be provided.
- the second resin body 32 is provided on the surface of the protective layer 26, for example. Also, the second resin body 32 may be provided outside the protective layer 26 , and in that case, may be provided on the substrate 10 .
- the tip of the second resin body 32 is preferably positioned higher than the tips of the first external electrode 27A and the second external electrode 27B.
- the second resin body 32 can disperse the load more widely, so that the load applied to the capacitor element, particularly the dielectric film 23, is sufficiently suppressed.
- the tip of the second resin body 32 is preferably positioned lower than the tip of the first resin body 31 in the thickness direction T. In this case, for example, when the capacitor 1 is mounted on the wiring board, it can be stably held on the wiring board by the first resin body 31 .
- the second resin body 32 preferably contains at least one resin selected from the group consisting of resin in the solder resist, polyimide resin, polyimideamide resin and epoxy resin.
- the second resin body 32 is preferably a cured product of photosensitive resin.
- the resin contained in the first resin body 31 and the resin contained in the second resin body 32 may be the same as or different from each other.
- the second resin body 32 is a first resin body provided along the edge of the substrate 10 between the edge of the substrate 10 and the first external electrode 27A in plan view from the thickness direction T. It is preferable to have an outer peripheral portion 32a and a second outer peripheral portion 32b provided along the edge of the substrate 10 between the edge of the substrate 10 and the second external electrode 27B.
- the first wall portion 31a and the first outer peripheral portion 32a are preferably connected. Moreover, it is preferable that the second wall portion 31b and the second outer peripheral portion 32b are connected to each other.
- the capacitor 1 shown in FIG. 1 is characterized in that the side surface 24c of the second electrode layer 24 has a tapered shape that slopes inward from the first main surface 24a toward the second main surface 24b.
- the second electrode layer 24 can reduce the stress at the stress concentration point A on the moisture-resistant film 25 provided at the end of the. Therefore, since the stress of the moisture-resistant film 25 can be relaxed, the stress applied to the dielectric film 23 provided under the moisture-resistant film 25 and the second electrode layer 24 can be reduced. As a result, cracks occurring in the dielectric film 23 can be suppressed.
- FIG. 4-1 is a graph showing the relationship between the taper angle ⁇ A and the stress at point A.
- the taper angle ⁇ A means the angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24, as shown in FIG.
- the stress at point A was calculated by performing a simulation using the finite element method.
- the taper angle ⁇ A is 90°.
- FIG. 4-1 shows normalized relative values with the stress at the point A at this time as 100%.
- the taper angle ⁇ A when the taper angle ⁇ A is 45° or less, the effect of reducing the stress at the point A is high.
- the effect of reducing the stress at the point A increases as the taper angle ⁇ A decreases. becomes smaller, it becomes difficult to secure a contact area with the second external electrode 27B. From the above, when the angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A , it is preferable that 20° ⁇ A ⁇ 45°.
- FIG. 4-2 is a schematic diagram for explaining a method of measuring the taper angle ⁇ A .
- a line segment parallel to the first main surface 24a of the second electrode layer 24 and having a height of 1/2T and the second electrode Let X be the point where the line segment along the side surface 24c of the layer 24 intersects.
- the angle connecting the first main surface 24a of the second electrode layer 24, the vertex O, and the point X is defined as a taper angle ⁇ A .
- the taper angles ⁇ B and ⁇ C described later can also be measured by a similar method.
- the second electrode layer 24 is usually made of the above metal or the like. In that case, a desired tapered shape can be easily formed on the side surface 24c of the second electrode layer 24 by using a method such as wet etching or dry etching.
- side surface 22c of first electrode layer 22 does not have a tapered shape. That is, the angle ⁇ B (see FIG. 7) of the side surface 22c of the first electrode layer 22 with respect to the first main surface 22a of the first electrode layer 22 is 90°.
- the angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A
- the side surface 22c of the first electrode layer 22 with respect to the first main surface 22a of the first electrode layer 22 is is ⁇ B , it is preferable that ⁇ A ⁇ B.
- the tapered shape of the second electrode layer 24 may be formed on a part of the side surface of the second electrode layer 24 or may be formed on the entire side surface.
- the load applied to the external electrode 27 (especially the second external electrode 27B) is isotropically applied in the planar direction of the film such as the moisture-resistant film 25 . Therefore, from the viewpoint of reducing the stress applied to the dielectric film 23, it is preferable that the entire side surface of the second electrode layer 24 has a tapered shape.
- the outer shape of the second external electrode 27B when viewed from the thickness direction T, is preferably smaller than the outer shape of the second electrode layer 24 .
- the load applied to the external electrode 27 (especially the second external electrode 27B) is easily applied to the dielectric film 23.
- the outer shape of the second external electrode 27B is smaller than the outer shape of the second electrode layer 24, the second electrode layer 24 exists directly below the second external electrode 27B. It becomes difficult for the load applied to the electrode 27B) to be applied to the dielectric film . As a result, cracks occurring in the dielectric film 23 can be further suppressed.
- the capacitor 1 shown in FIG. 1 can be manufactured by a known method described in, for example, International Publication No. 2019/021827, except that the second electrode layer 24 is tapered.
- the second electrode layer is composed of multiple conductive layers.
- FIG. 5 is a cross-sectional view schematically showing an example of a capacitor according to the second embodiment of the invention.
- the second electrode layer 24 is composed of multiple conductive layers laminated in the thickness direction (the direction indicated by the arrow T in FIG. 5).
- the number of conductive layers is not particularly limited.
- the side surface of at least one conductive layer should have a tapered shape, it is preferable that the side surface of each conductive layer has a tapered shape.
- the conductive layer closer to the moisture-resistant film 25 has a smaller area when viewed in plan from the thickness direction T than the conductive layer closer to the dielectric film 23.
- the taper angle of each conductive layer may be the same or different.
- the capacitor 2 shown in FIG. 5 also has the same effect as the capacitor 1 shown in FIG. 5
- FIG. 6 is a cross-sectional view schematically showing an example of a capacitor according to the third embodiment of the invention.
- 7 is a cross-sectional view enlarging the side surfaces of the first electrode layer and the second electrode layer that constitute the capacitor shown in FIG. 6.
- the side surface 22c of the first electrode layer 22 has a tapered shape that slopes inward from the first main surface 22a toward the second main surface 22b. Furthermore, as shown in FIG. 7, the angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A , and the first electrode with respect to the first main surface 22a of the first electrode layer 22 is When the angle of the side surface 22c of the layer 22 is ⁇ B , ⁇ A ⁇ ⁇ B .
- angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A , it is preferable that 20° ⁇ A ⁇ 45°.
- the angle of the side surface 22c of the first electrode layer 22 with respect to the first main surface 22a of the first electrode layer 22 is ⁇ B , it is preferable that 25° ⁇ B ⁇ 70°.
- the tapered shape of the second electrode layer 24 may be formed on a part of the side surface of the second electrode layer 24 or may be formed on the entire side surface of the second electrode layer 24, but the entire side surface of the second electrode layer 24 is tapered. It is preferred to have Moreover, the tapered shape of the first electrode layer 22 may be formed on a part of the side surface of the first electrode layer 22 or may be formed on the entire side surface. It is preferred to have
- a capacitor according to a fourth embodiment of the present invention further includes a third electrode layer provided on the dielectric film apart from the second electrode layer, and the external electrode is a first electrode layer connected to the third electrode layer.
- the second electrode layer is made of a single conductive layer.
- FIG. 8 is a cross-sectional view schematically showing an example of a capacitor according to the fourth embodiment of the invention.
- the capacitor 4 shown in FIG. 8 includes a substrate 10, an insulating film 21 provided on the substrate 10, a first electrode layer 22 provided on the insulating film 21, a dielectric a dielectric film 23, a second electrode layer 24 provided on the dielectric film 23, a third electrode layer 29 provided on the dielectric film 23 away from the second electrode layer 24, the dielectric film 23, A moisture-resistant film 25 provided on the second electrode layer 24 and the third electrode layer 29 , a protective layer 26 provided on the moisture-resistant film 25 , and an external electrode 27 penetrating the protective layer 26 .
- the external electrodes 27 include first external electrodes 27A connected to the third electrode layer 29 and second external electrodes 27B connected to the second electrode layer 24 .
- the first external electrode 27A penetrates the protective layer 26 and the moisture-resistant film 25, and the second external electrode 27B penetrates the protective layer 26 and the moisture-resistant film 25.
- capacitors are formed on the left side, whereas in the configuration of the capacitor 4 shown in FIG. 8, capacitors are formed on the left and right sides.
- the portion where the first external electrode 27A is connected to the first electrode layer 22 in the structure shown in FIG. It's just replacing the provided components. Therefore, the configuration shown in FIG. 8 does not require additional device formation space with respect to the configuration shown in FIG. Therefore, a capacitor with a low capacitance can be manufactured with the same element area.
- Such a structure is effective when a dielectric film having a certain thickness or more cannot be formed.
- the third electrode layer 29 is provided facing the first electrode layer 22 with the dielectric film 23 interposed therebetween.
- the third electrode layer 29 includes a first main surface 29a on the dielectric film 23 side, a second main surface 29b on the moisture-resistant film 25 side, a side surface 29c connecting the first main surface 29a and the second main surface 29b, have
- the third electrode layer 29 has a structure consisting of a single conductive layer.
- the material constituting the third electrode layer 29 is not particularly limited, but Cu, Ag, Au, Al, Ni, Cr, Ti, or alloys containing at least one of these metals are preferred.
- FIG. 9 is a cross-sectional view enlarging the side surface of the third electrode layer that constitutes the capacitor shown in FIG.
- the side surface 29c of the third electrode layer 29 is tapered inwardly from the first main surface 29a on the dielectric film 23 side toward the second main surface 29b on the moisture-resistant film 25 side. have.
- the third electrode layer 29 can reduce the stress at the stress concentration point C on the moisture-resistant film 25 provided at the end of the. Therefore, since the stress of the moisture-resistant film 25 can be relaxed, the stress applied to the dielectric film 23 provided under the moisture-resistant film 25 and the third electrode layer 29 can be reduced. As a result, cracks occurring in the dielectric film 23 can be suppressed.
- angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A , it is preferable that 20° ⁇ A ⁇ 45°.
- the angle of the side surface 29c of the third electrode layer 29 with respect to the first main surface 29a of the third electrode layer 29 is ⁇ C , it is preferable that 20° ⁇ C ⁇ 45°.
- the taper angle ⁇ C of the third electrode layer 29 may be the same as or different from the taper angle ⁇ A of the second electrode layer 24 .
- side surface 22c of first electrode layer 22 does not have a tapered shape. That is, the angle ⁇ B (see FIG. 7) of the side surface 22c of the first electrode layer 22 with respect to the first main surface 22a of the first electrode layer 22 is 90°.
- the angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A
- the side surface 22c of the first electrode layer 22 with respect to the first main surface 22a of the first electrode layer 22 is is ⁇ B
- ⁇ C is the angle of the side surface 29c of the third electrode layer 29 with respect to the first main surface 29a of the third electrode layer 29, ⁇ A ⁇ ⁇ B and ⁇ C ⁇ ⁇ B. preferable.
- the tapered shape of the second electrode layer 24 may be formed on a part of the side surface of the second electrode layer 24 or may be formed on the entire side surface of the second electrode layer 24, but the entire side surface of the second electrode layer 24 is tapered. It is preferred to have Similarly, the tapered shape of the third electrode layer 29 may be formed on a part of the side surface of the third electrode layer 29 or may be formed on the entire side surface. It preferably has a shape.
- the outer shape of the first external electrode 27A is smaller than the outer shape of the third electrode layer 29, and the outer shape of the second outer electrode 27B is smaller than the outer shape of the second electrode layer 24. is preferably smaller than the outline of the If the external shape of the first external electrode 27A is equal to or larger than the external shape of the third electrode layer 29, the load applied to the external electrode 27 (especially the first external electrode 27A) is likely to be applied to the dielectric film 23. Further, when the external shape of the second external electrode 27B is equal to or larger than the external shape of the second electrode layer 24, the load applied to the external electrode 27 (especially the second external electrode 27B) is likely to be applied to the dielectric film 23. Become.
- the first external electrode 27A when the external shape of the first external electrode 27A is smaller than the external shape of the third electrode layer 29 and the external shape of the second external electrode 27B is smaller than the external shape of the second electrode layer 24, the first external electrode 27A Since the third electrode layer 29 exists directly under and the second electrode layer 24 exists directly under the second external electrode 27B, A load is less likely to be applied to the dielectric film 23 . As a result, cracks occurring in the dielectric film 23 can be further suppressed.
- the second electrode layer is composed of multiple conductive layers
- the third electrode layer is composed of multiple conductive layers
- FIG. 10 is a cross-sectional view schematically showing an example of a capacitor according to the fifth embodiment of the invention.
- the second electrode layer 24 is composed of multiple conductive layers laminated in the thickness direction (direction indicated by arrow T in FIG. 10).
- the number of conductive layers is not particularly limited.
- the side surface of at least one conductive layer should have a tapered shape, it is preferable that the side surface of each conductive layer has a tapered shape.
- the conductive layer closer to the moisture-resistant film 25 has a smaller area when viewed in plan from the thickness direction T than the conductive layer closer to the dielectric film 23.
- the taper angle of each conductive layer may be the same or different.
- the third electrode layer 29 is composed of multiple conductive layers laminated in the thickness direction T.
- the number of conductive layers is not particularly limited. Although the side surface of at least one conductive layer should have a tapered shape, it is preferable that the side surface of each conductive layer has a tapered shape.
- the number of conductive layers included in the third electrode layer 29 may be the same as or different from the number of conductive layers included in the second electrode layer 24 .
- the conductive layer closer to the moisture-resistant film 25 has a smaller area when viewed in plan from the thickness direction T than the conductive layer closer to the dielectric film 23.
- the taper angle of each conductive layer may be the same or different.
- the capacitor 5 shown in FIG. 10 also has the same effect as the capacitor 2 shown in FIG.
- FIG. 11 is a cross-sectional view schematically showing an example of a capacitor according to the sixth embodiment of the invention.
- the side surface 22c of the first electrode layer 22 has a tapered shape that slopes inward from the first main surface 22a toward the second main surface 22b. Furthermore, the angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A , and the angle of the side surface 22c of the first electrode layer 22 with respect to the first main surface 22a of the first electrode layer 22 is is ⁇ B , and the angle of the side surface 29c of the third electrode layer 29 with respect to the first main surface 29a of the third electrode layer 29 is ⁇ C , ⁇ A ⁇ B and ⁇ C ⁇ B.
- the capacitor 5 shown in FIG. 10 also has the same effect as the capacitor 3 shown in FIG.
- angle of the side surface 24c of the second electrode layer 24 with respect to the first main surface 24a of the second electrode layer 24 is ⁇ A , it is preferable that 20° ⁇ A ⁇ 45°.
- the angle of the side surface 29c of the third electrode layer 29 with respect to the first main surface 29a of the third electrode layer 29 is ⁇ C , it is preferable that 20° ⁇ C ⁇ 45°.
- the taper angle ⁇ C of the third electrode layer 29 may be the same as or different from the taper angle ⁇ A of the second electrode layer 24 .
- the angle of the side surface 22c of the first electrode layer 22 with respect to the first main surface 22a of the first electrode layer 22 is ⁇ B , it is preferable that 25° ⁇ B ⁇ 70°.
- the tapered shape of the second electrode layer 24 may be formed on a part of the side surface of the second electrode layer 24 or may be formed on the entire side surface of the second electrode layer 24, but the entire side surface of the second electrode layer 24 is tapered. It is preferred to have Similarly, the tapered shape of the third electrode layer 29 may be formed on a part of the side surface of the third electrode layer 29 or may be formed on the entire side surface. It preferably has a shape. Moreover, the tapered shape of the first electrode layer 22 may be formed on a part of the side surface of the first electrode layer 22 or may be formed on the entire side surface. It is preferred to have
- the semiconductor device of the present invention is not limited to the above-described embodiments, and various applications and modifications can be made within the scope of the present invention with respect to the configuration, manufacturing conditions, etc. of the semiconductor device such as a capacitor. .
- a capacitor is described in which the second electrode layer is composed of multiple conductive layers and the third electrode layer is composed of multiple conductive layers.
- a capacitor may be used in which one of the layers is composed of a single conductive layer and the other is composed of multiple conductive layers.
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Abstract
Description
しかしながら、本発明は、以下の構成に限定されるものではなく、本発明の要旨を変更しない範囲において適宜変更して適用することができる。なお、以下において記載する本発明の個々の好ましい構成を2つ以上組み合わせたものもまた本発明である。
本発明の第1実施形態に係るキャパシタでは、第2電極層が単層の導電層からなる。
本発明の第2実施形態に係るキャパシタでは、第1実施形態の変形例として、第2電極層が複層の導電層からなる。
本発明の第3実施形態に係るキャパシタでは、第1実施形態及び第2実施形態の変形例として、第2電極層の側面だけでなく第1電極層の側面もテーパー形状を有する。
本発明の第4実施形態に係るキャパシタは、誘電体膜上に前記第2電極層と離れて設けられた第3電極層をさらに備え、外部電極は、第3電極層に接続された第1外部電極と、第2電極層に接続された第2外部電極と、を含む。本発明の第4実施形態に係るキャパシタでは、第2電極層が単層の導電層からなる。
本発明の第5実施形態に係るキャパシタでは、第4実施形態の変形例として、第2電極層が複層の導電層からなり、第3電極層が複層の導電層からなる。
本発明の第6実施形態に係るキャパシタでは、第4実施形態及び第5実施形態の変形例として、第2電極層の側面だけでなく第1電極層の側面もテーパー形状を有する。
本発明の半導体装置は、上記実施形態に限定されるものではなく、キャパシタ等の半導体装置の構成、製造条件等に関し、本発明の範囲内において、種々の応用、変形を加えることが可能である。
10 基板
21 絶縁膜
22 第1電極層
22a 第1電極層の第1主面
22b 第1電極層の第2主面
22c 第1電極層の側面
23 誘電体膜
24 第2電極層
24a 第2電極層の第1主面
24b 第2電極層の第2主面
24c 第2電極層の側面
25 耐湿膜
26 保護層
27 外部電極
27A 第1外部電極
27B 第2外部電極
28a シード層
28b 第1めっき層
28c 第2めっき層
29 第3電極層
29a 第3電極層の第1主面
29b 第3電極層の第2主面
29c 第3電極層の側面
31 第1樹脂体
31a 第1壁部
31b 第2壁部
32 第2樹脂体
32a 第1外周部
32b 第2外周部
A、B、C 耐湿膜上の応力集中点
θA 第2電極層の第1主面に対する第2電極層の側面の角度
θB 第1電極層の第1主面に対する第1電極層の側面の角度
θC 第3電極層の第1主面に対する第3電極層の側面の角度
Claims (14)
- 基板と、
前記基板上に設けられた第1電極層と、
前記第1電極層上に設けられ、前記第1電極層の端部を覆う誘電体膜と、
前記誘電体膜上に設けられた第2電極層と、
前記誘電体膜及び前記第2電極層上に設けられた耐湿膜と、
前記耐湿膜上に設けられた保護層と、
前記保護層を貫通する外部電極と、
を備え、
前記第1電極層は、前記基板側の第1主面と、前記誘電体膜側の第2主面と、前記第1主面と前記第2主面とをつなぐ側面と、を有し、
前記第2電極層は、前記誘電体膜側の第1主面と、前記耐湿膜側の第2主面と、前記第1主面と前記第2主面とをつなぐ側面と、を有し、
前記第2電極層の前記側面の少なくとも一部は、前記第1主面から前記第2主面に向かうにつれて内側に傾くテーパー形状を有する、半導体装置。 - 前記外部電極は、前記第1電極層に接続された第1外部電極と、前記第2電極層に接続された第2外部電極と、を含む、請求項1に記載の半導体装置。
- 前記第2電極層は、単層の導電層からなる、請求項2に記載の半導体装置。
- 前記第2電極層は、前記厚み方向に積層された複層の導電層からなり、
前記厚み方向に隣接する導電層のうち、前記耐湿膜に近い導電層は、前記誘電体膜に近い導電層よりも、前記厚み方向から平面視したときの面積が小さい、請求項2に記載の半導体装置。 - 前記第2電極層の前記第1主面に対する前記第2電極層の前記側面の角度をθA、前記第1電極層の前記第1主面に対する前記第1電極層の前記側面の角度をθBとしたとき、θA<θBである、請求項2~4のいずれか1項に記載の半導体装置。
- 前記第1電極層の前記側面の少なくとも一部は、前記第1主面から前記第2主面に向かうにつれて内側に傾くテーパー形状を有する、請求項5に記載の半導体装置。
- 前記厚み方向から平面視したとき、前記第2外部電極の外形は前記第2電極層の外形よりも小さい、請求項2~6のいずれか1項に記載の半導体装置。
- 前記誘電体膜上に前記第2電極層と離れて設けられた第3電極層をさらに備え、
前記外部電極は、前記第3電極層に接続された第1外部電極と、前記第2電極層に接続された第2外部電極と、を含み、
前記第3電極層は、前記誘電体膜側の第1主面と、前記耐湿膜側の第2主面と、前記第1主面と前記第2主面とをつなぐ側面と、を有し、
前記第3電極層の前記側面の少なくとも一部は、前記第1主面から前記第2主面に向かうにつれて内側に傾くテーパー形状を有する、請求項1に記載の半導体装置。 - 前記第2電極層は、前記テーパー形状を有する単層の導電層からなり、
前記第3電極層は、前記テーパー形状を有する単層の導電層からなる、請求項8に記載の半導体装置。 - 前記第2電極層は、各々が前記テーパー形状を有する、前記厚み方向に積層された複層の導電層からなり、
前記第3電極層は、各々が前記テーパー形状を有する、前記厚み方向に積層された複層の導電層からなり、
前記厚み方向に隣接する導電層のうち、前記耐湿膜に近い導電層は、前記誘電体膜に近い導電層よりも、前記厚み方向から平面視したときの面積が小さい、請求項8に記載の半導体装置。 - 前記第2電極層の前記第1主面に対する前記第2電極層の前記側面の角度をθA、前記第1電極層の前記第1主面に対する前記第1電極層の前記側面の角度をθB、前記第3電極層の前記第1主面に対する前記第3電極層の前記側面の角度をθCとしたとき、θA<θBかつθC<θBである、請求項8~10のいずれか1項に記載の半導体装置。
- 前記第1電極層の前記側面の少なくとも一部は、前記第1主面から前記第2主面に向かうにつれて内側に傾くテーパー形状を有する、請求項11に記載の半導体装置。
- 前記厚み方向から平面視したとき、前記第1外部電極の外形は前記第3電極層の外形よりも小さく、かつ、前記第2外部電極の外形は前記第2電極層の外形よりも小さい、請求項8~12のいずれか1項に記載の半導体装置。
- 前記第2電極層の前記第1主面に対する前記第2電極層の前記側面の角度をθAとしたとき、20°≦θA≦45°である、請求項1~13のいずれか1項に記載の半導体装置。
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